CN209979526U - A device for detecting X-ray properties of semiconductor materials - Google Patents
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- 239000000853 adhesive Substances 0.000 claims abstract 7
- 230000001070 adhesive effect Effects 0.000 claims abstract 7
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- 239000012212 insulator Substances 0.000 description 1
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- 230000004044 response Effects 0.000 description 1
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Abstract
Description
技术领域technical field
本实用新型涉及一种半导体材料性能探测技术领域,特别涉及一种探测半导体材料X射线性能的装置。The utility model relates to the technical field of semiconductor material performance detection, in particular to a device for detecting the X-ray performance of semiconductor materials.
背景技术Background technique
半导体材料是一类具有半导体性能(导电能力介于导体与绝缘体之间,电阻率约在1mΩ·cm~1GΩ·cm范围内)、可用来制作半导体器件和集成电路的电子材料。半导体材料能够直接吸收放射性射线,通过光电效应、康普顿散射、电子对产生三种作用方式产生电子-空穴对,它们在外加电场中运动产生探测器的基本电信号,通过对产生的电信号进行采集,即可得到材料相应的开关比,计算材料探测的灵敏度,计算材料的μτ积。但是由于辐射探测需要电流级别很低,产生的弱电流探测极易受外界环境等因素干扰,从而影响探测的准确性。Semiconductor materials are a class of electronic materials with semiconductor properties (conductivity between conductors and insulators, resistivity in the range of about 1mΩ·cm to 1GΩ·cm) and can be used to make semiconductor devices and integrated circuits. Semiconductor materials can directly absorb radioactive rays, and generate electron-hole pairs through the photoelectric effect, Compton scattering, and electron pair generation. They move in an external electric field to generate the basic electrical signal of the detector. After the signal is collected, the corresponding switching ratio of the material can be obtained, the sensitivity of the material detection can be calculated, and the μτ product of the material can be calculated. However, since radiation detection requires a very low current level, the generated weak current detection is easily disturbed by factors such as the external environment, thus affecting the accuracy of detection.
实用新型内容Utility model content
针对现有技术的不足,本实用新型目的在于提供一种结构简单,不受外界环境干扰,可以准确探测半导体材料X射线性能的装置。其采用如下技术方案:In view of the deficiencies of the prior art, the purpose of the present invention is to provide a device with a simple structure, which is not disturbed by the external environment, and can accurately detect the X-ray performance of the semiconductor material. It adopts the following technical solutions:
一种用于探测半导体材料X射线性能的装置,其包括暗箱和静电计,所述暗箱内设有电磁屏蔽盒,所述电磁屏蔽盒上方设有开口,所述开口上方设有X射线光源,所述电磁屏蔽盒内设有PCB板,所述PCB板上设有第一导电胶、第二导电胶、第一针脚和第二针脚,所述第一导电胶和第二导电胶用于分别与样品的上下表面粘合,所述第一导电胶与第一针脚电连接,所述第二导电胶与第二针脚电连接,所述第一针脚与所述静电计的高压输入口连接,所述第二针脚与所述静电计的信号输入口连接。A device for detecting X-ray properties of semiconductor materials, comprising a camera obscura and an electrometer, an electromagnetic shielding box is arranged inside the camera obscura, an opening is arranged above the electromagnetic shielding box, and an X-ray light source is arranged above the opening, The electromagnetic shielding box is provided with a PCB board, and the PCB board is provided with a first conductive glue, a second conductive glue, a first pin and a second pin, and the first conductive glue and the second conductive glue are used for respectively Adhere to the upper and lower surfaces of the sample, the first conductive glue is electrically connected to the first pin, the second conductive glue is electrically connected to the second pin, and the first pin is connected to the high-voltage input port of the electrometer, The second pin is connected to the signal input port of the electrometer.
作为本实用新型的进一步改进,所述第一针脚或第二针脚还与所述静电计的地线输入口连接。As a further improvement of the present invention, the first pin or the second pin is also connected to the ground wire input port of the electrometer.
作为本实用新型的进一步改进,所述PCB板上镀有导电金属层,所述导电金属层与第二导电胶相接触,所述第二针脚与导电金属层电连接。As a further improvement of the present invention, the PCB is plated with a conductive metal layer, the conductive metal layer is in contact with the second conductive glue, and the second pins are electrically connected to the conductive metal layer.
作为本实用新型的进一步改进,所述暗箱内还设有承载台,所述电磁屏蔽盒设于所述承载台上。As a further improvement of the present invention, the dark box is further provided with a bearing platform, and the electromagnetic shielding box is arranged on the bearing platform.
作为本实用新型的进一步改进,所述承载台为可升降承载台。As a further improvement of the present invention, the bearing platform is a liftable bearing platform.
作为本实用新型的进一步改进,所述第一针脚通过同轴电缆与所述静电计的高压输入口连接,所述第二针脚通过同轴电缆与所述静电计的信号输入口连接。As a further improvement of the present invention, the first pin is connected to the high voltage input port of the electrometer through a coaxial cable, and the second pin is connected to the signal input port of the electrometer through a coaxial cable.
作为本实用新型的进一步改进,所述电磁屏蔽盒内设有第一IC插座,所述第一针脚与第一IC插座连接,所述第一IC插座上设有第一BNC连接器,所述第一BNC连接器通过同轴电缆与静电计的高压输入口连接,所述电磁屏蔽盒内设有第二IC插座,所述第二针脚与第二IC插座连接,所述第二IC插座上设有第二BNC连接器,所述第二BNC连接器通过同轴电缆与静电计的信号输入口连接。As a further improvement of the present invention, the electromagnetic shielding box is provided with a first IC socket, the first pin is connected to the first IC socket, the first IC socket is provided with a first BNC connector, the The first BNC connector is connected to the high-voltage input port of the electrometer through a coaxial cable, the electromagnetic shielding box is provided with a second IC socket, the second pin is connected to the second IC socket, and the second IC socket is on the second IC socket. A second BNC connector is provided, and the second BNC connector is connected to the signal input port of the electrometer through a coaxial cable.
作为本实用新型的进一步改进,还包括控制面板,所述控制面板设于暗箱外壁,所述控制面板与X射线光源连接。As a further improvement of the present invention, a control panel is also included, the control panel is arranged on the outer wall of the dark box, and the control panel is connected with the X-ray light source.
作为本实用新型的进一步改进,所述静电计为高阻静电计。As a further improvement of the present invention, the electrometer is a high resistance electrometer.
本实用新型的有益效果:The beneficial effects of the present utility model:
本实用新型的用于探测半导体材料X射线性能的装置结构简单,操作方便,能够很好地实现静电屏蔽,减少外界环境对探测的干扰,大大降低了测试成本。同时,各部件之间连接稳定,接触好,能够准确测量到样品的弱电流,进而得到样品的X射线性能,探测精度高。The device for detecting the X-ray performance of the semiconductor material of the utility model has the advantages of simple structure and convenient operation, which can well realize electrostatic shielding, reduce the interference of the external environment on the detection, and greatly reduce the testing cost. At the same time, the connection between the components is stable and the contact is good, and the weak current of the sample can be accurately measured, thereby obtaining the X-ray performance of the sample, and the detection accuracy is high.
上述说明仅是本实用新型技术方案的概述,为了能够更清楚了解本实用新型的技术手段,而可依照说明书的内容予以实施,并且为了让本实用新型的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。The above description is only an overview of the technical solution of the present invention, in order to be able to understand the technical means of the present invention more clearly, it can be implemented according to the contents of the description, and in order to make the above-mentioned and other purposes, features and advantages of the present invention better. It is obvious and easy to understand, and the preferred embodiments are exemplified below, and the detailed description is as follows in conjunction with the accompanying drawings.
附图说明Description of drawings
图1是本实用新型实施例中用于探测半导体材料X射线性能的装置的结构示意图。FIG. 1 is a schematic structural diagram of an apparatus for detecting X-ray properties of semiconductor materials in an embodiment of the present invention.
标记说明:10、暗箱;20、静电计;21、高压输入口;22、信号输入口;23、地线输入口;30、X射线光源;31、控制面板;40、承载台;50、电磁屏蔽盒;51、PCB板;52、第一导电胶;53、第二导电胶;54、导电金属层;55、第一针脚;56、第二针脚;60、样品;70、计算机。Marking description: 10, dark box; 20, electrometer; 21, high voltage input port; 22, signal input port; 23, ground wire input port; 30, X-ray light source; 31, control panel; 40, carrying platform; 50, electromagnetic shielding box; 51, PCB board; 52, first conductive glue; 53, second conductive glue; 54, conductive metal layer; 55, first pin; 56, second pin; 60, sample; 70, computer.
具体实施方式Detailed ways
下面结合附图和具体实施例对本实用新型作进一步说明,以使本领域的技术人员可以更好地理解本实用新型并能予以实施,但所举实施例不作为对本实用新型的限定。The present utility model will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present utility model and implement it, but the examples are not intended to limit the present utility model.
基于材料的光电响应,在X射线的照射下,半导体材料里就会产生电子和空穴。再外加电场的作用下,电子和空穴就会实现分离。在电场回路中电子和空穴就会实现定向迁移,从而产生电流信号。Based on the photoelectric response of the material, electrons and holes are generated in the semiconductor material under the irradiation of X-rays. Under the action of an external electric field, the electrons and holes will be separated. In the electric field loop, electrons and holes can achieve directional migration, thereby generating a current signal.
如图1所示,为本实用新型实施例中用于探测半导体材料X射线性能的装置,该装置包括暗箱10和静电计20。在本实施例中,静电计20为高阻静电计,优选为KEIFHLEY 6517B高阻静电计,静电计20上设有高压输入口21、信号输入口22和地线输入口23。As shown in FIG. 1 , it is an apparatus for detecting X-ray properties of semiconductor materials in an embodiment of the present invention, and the apparatus includes a camera obscura 10 and an
暗箱10内设有电磁屏蔽盒50,电磁屏蔽盒50上方设有开口,开口上方设有X射线光源30,电磁屏蔽盒50内设有PCB板51,PCB板51上设有第一导电胶52、第二导电胶53、第一针脚55和第二针脚56,第一导电胶52和第二导电胶53用于分别与样品60的上下表面粘合,第一导电胶52与第一针脚55电连接,第二导电胶53与第二针脚56连接,第一针脚55与静电计20的高压输入口21连接,第二针脚56与静电计20的信号输入口22连接。优选的,X射线光源30设于样品60的正上方,确保样品60能够得到最大的照射。样品60为半导体材料。An
在本实施例中,该装置还包括控制面板31,控制面板31设于暗箱10外壁,控制面板31与X射线光源30连接。用于通过调节X射线光源30的管电流和管电压来控制X射线剂量率。In this embodiment, the device further includes a
在本实施例中,第一针脚55通过同轴电缆与静电计20的高压输入口21连接,第二针脚56通过同轴电缆与静电计20的信号输入口22连接。In this embodiment, the
优选的,电磁屏蔽盒50内设有第一IC插座,第一针脚55与第一IC插座连接,第一IC插座上设有第一BNC连接器,第一BNC连接器通过同轴电缆与静电计20的高压输入口21连接,电磁屏蔽盒50内设有第二IC插座,第二针脚56与第二IC插座连接,第二IC插座上设有第二BNC连接器,第二BNC连接器通过同轴电缆与静电计20的信号输入口22连接。Preferably, the
在本实施例中,PCB板51上镀有导电金属层54,导电金属层54与第二导电胶53相接触,第二针脚56与导电金属层54电连接。导电金属层54使连接更加稳定。In this embodiment, a
在本实施例中,第一针脚55或第二针脚56还与静电计20的地线输入口23连接。用于进行安全防护。In this embodiment, the
在本实施例中,暗箱10内还设有承载台40,电磁屏蔽盒50设于承载台50上。优选的,承载台40为可升降承载台。通过调节承载台40可以得到最适宜的辐照率位置。In this embodiment, the
在本实施例中,X射线光源30为连续X射线光源或脉冲X射线光源。In this embodiment, the
通过高压输入口21向样品60输入高压,并通过信号输入口22采集样品60产生的电流信号,通过将静电计20与计算机70连接,计算机70通过电流信号即可计算得到样品相应的开关比,计算样品的μτ积等参数,从而得到样品的X射线性能。The high voltage is input to the sample 60 through the high
本实用新型的用于探测半导体材料X射线性能的装置结构简单,操作方便,能够很好地实现静电屏蔽,减少外界环境对探测的干扰,大大降低了测试成本。同时,各部件之间连接稳定,接触好,能够准确测量到样品的弱电流,进而得到样品的X射线性能,探测精度高。The device for detecting the X-ray performance of the semiconductor material of the utility model has the advantages of simple structure and convenient operation, which can well realize electrostatic shielding, reduce the interference of the external environment on the detection, and greatly reduce the testing cost. At the same time, the connection between the components is stable and the contact is good, and the weak current of the sample can be accurately measured, thereby obtaining the X-ray performance of the sample, and the detection accuracy is high.
以上实施例仅是为充分说明本实用新型而所举的较佳的实施例,本实用新型的保护范围不限于此。本技术领域的技术人员在本实用新型基础上所作的等同替代或变换,均在本实用新型的保护范围之内。本实用新型的保护范围以权利要求书为准。The above embodiments are only preferred embodiments for fully illustrating the present invention, and the protection scope of the present invention is not limited thereto. Equivalent substitutions or transformations made by those skilled in the art on the basis of the present invention are all within the protection scope of the present invention. The protection scope of the present utility model is subject to the claims.
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CN110057842A (en) * | 2019-05-31 | 2019-07-26 | 苏州大学 | It is a kind of for detecting the device of semiconductor material X-ray performance |
CN113418859A (en) * | 2021-06-18 | 2021-09-21 | 北京卫星环境工程研究所 | Two-dimensional sample switching system |
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CN110057842A (en) * | 2019-05-31 | 2019-07-26 | 苏州大学 | It is a kind of for detecting the device of semiconductor material X-ray performance |
CN113418859A (en) * | 2021-06-18 | 2021-09-21 | 北京卫星环境工程研究所 | Two-dimensional sample switching system |
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