CN209747553U

CN209747553U - High-voltage light-emitting diode chip

Info

Publication number: CN209747553U
Application number: CN201920832752.2U
Authority: CN
Inventors: 蔡家豪; 徐凯; 章兴洋; 毕东升; 张家豪
Original assignee: Anhui Sanan Optoelectronics Co Ltd
Current assignee: Anhui Sanan Optoelectronics Co Ltd
Priority date: 2019-06-04
Filing date: 2019-06-04
Publication date: 2019-12-06
Anticipated expiration: 2029-06-04

Abstract

The utility model provides a high-voltage light-emitting diode chip includes at least: a substrate and a light emitting stack on the substrate; the light-emitting laminated layer comprises a plurality of light-emitting elements which are electrically isolated through channels, and each light-emitting element comprises an N-type layer, a light-emitting layer and a P-type layer which are sequentially laminated; the metal bridging line is positioned above the channel and is electrically connected with the adjacent light-emitting elements; the method is characterized in that: and filling a light-transmitting insulating material layer in the channel, wherein the light-transmitting insulating material layer comprises a first light-transmitting insulating layer and a second light-transmitting insulating layer which have different refractive indexes. The utility model discloses a pack in the channel by high refracting index printing opacity insulating material layer and low refracting index printing opacity insulating material layer to the ageing resistance of reinforcing emitting diode chip increases the light-emitting area of chip, improves the light-emitting efficiency of chip.

Description

High-voltage light-emitting diode chip

Technical Field

The utility model belongs to the semiconductor field especially relates to a high-voltage light emitting diode chip.

Background

The high-voltage light-emitting diode has the advantages that multiple chips are connected in series to emit light in the LED chip preparation section, the number of bonding wires in a downstream packaging factory is reduced, the production efficiency is improved, the cost is saved, and the reliability of a packaging body is improved along with the reduction of the number of bonding wires. The side walls of isolation channels among a plurality of chips of the conventional high-voltage light-emitting diode are smooth, so that the channels are wide, and the light-emitting area of the chips is lost. Moreover, the isolation trench is wider, which results in poor coverage of the electrodes at the bridge, and thus causes aging problem.

Disclosure of Invention

In order to solve the above problems, the utility model provides a high-voltage light emitting diode chip includes at least: a substrate and a light emitting stack on the substrate; the light-emitting laminated layer comprises a plurality of light-emitting elements which are electrically isolated through channels, and each light-emitting element comprises an N-type layer, a light-emitting layer, a P-type layer, a P electrode and an N electrode which are sequentially laminated; the metal bridging line is positioned above the channel and is electrically connected with the adjacent light-emitting elements; the method is characterized in that: and filling a light-transmitting insulating material layer in the channel, wherein the light-transmitting insulating material layer comprises a first light-transmitting insulating layer and a second light-transmitting insulating layer which have different refractive indexes.

Further, the light-transmitting insulating material layer is of a double-layer structure or a multi-layer structure.

Further, the light-transmitting insulating material layer is composed of a first light-transmitting insulating layer and a second light-transmitting insulating layer located on the first light-transmitting insulating layer.

Furthermore, the light-transmitting insulating material layer is formed by alternately laminating a first light-transmitting insulating layer and a second light-transmitting insulating layer positioned on the first light-transmitting insulating layer.

further, the refractive index of the first light-transmitting insulating layer is larger than that of the second light-transmitting insulating layer.

Further, the first light-transmitting insulating layer is a phenyl silica gel layer, and the second light-transmitting insulating layer is a methyl silica gel layer.

Further, the refractive index of the first light-transmitting insulating layer is smaller than the refractive index of the second light-transmitting insulating layer.

Further, the first light-transmitting insulating layer is a methyl silica gel layer, and the second light-transmitting insulating layer is a phenyl silica gel layer.

Furthermore, a first current blocking layer is arranged below the metal bridging line.

Further, the light-emitting element further comprises a second current blocking layer and a transparent conductive layer which are laminated on the P-type layer, and the P electrode is in electrical contact with the P-type layer through the transparent conductive layer and the second current blocking layer.

Further, the light emitting element further includes a third current blocking layer stacked between the N-type layer and the N-electrode.

The high-voltage light-emitting diode chip of the utility model has the advantages that the metal bridging lines are flat above the channel and have no turning points, so that the coating performance is enhanced, and the anti-aging capacity is improved; the longitudinal section of the isolation channel is set to be square, and the width of the channel is reduced, so that the light-emitting area of the chip is increased; the light-transmitting insulating material layer filled in the channel comprises a high-refractive-index light-transmitting insulating material layer and a low-refractive-index light-transmitting insulating material layer, so that the light-emitting efficiency of the chip is improved.

Drawings

Fig. 1 is a front view of a high voltage light emitting diode according to embodiment 1 of the present invention.

Fig. 2 is a schematic structural view of a light-transmitting insulating material layer according to embodiment 2 of the present invention.

Detailed Description

The invention is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. The advantages and features of the present invention will become more fully apparent from the following description and appended claims. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention.

Example 1

Referring to fig. 1, the present invention provides a high voltage led chip, which at least comprises: a substrate 10 and a light emitting stack 20 on the substrate 10; the light emitting stack 20 includes a plurality of light emitting elements 21 electrically isolated by the channels 30, the light emitting elements 21 including an N-type layer 211, a light emitting layer 212, and a P-type layer 213, which are sequentially stacked, and a P-electrode 214 and an N-electrode 215; the metal bridge line 40 is located above the trench 30 and electrically connected to the adjacent light emitting elements 21.

The material of the substrate 10 may be sapphire, silicon carbide, silicon nitride, silicon, aluminum nitride, etc., and the substrate 10 may be patterned to form a patterned substrate, so as to improve the light extraction efficiency.

The light emitting stack 20 is deposited on the substrate 10 by organic chemical vapor deposition, typically one high voltage die may be composed of two light emitting elements 21, the N-type layers 211 of which have steps 2111.

The trench 30 is formed by dry etching or wet etching, the light-transmitting insulating material layer 50 is filled in the trench, the top of the light-transmitting insulating material layer 50 is flush with the step 2111, and the metal bridging line 40 above the trench 30 is flat without a turning part, so that the coverage of the trench is enhanced, and the aging resistance is improved.

The trench 30 is designed to have a narrow structure, and a longitudinal section thereof is square, that is, the sidewall of the trench 30 is vertical, and the width of the trench 30 is relatively reduced with respect to the trench 30 having the inclined sidewall, thereby increasing the light emitting area of the chip.

The light-transmitting insulating material layer 50 may be formed by spin coating and curing a liquid insulating material.

The light-transmitting insulating material layer 50 has a double-layer structure, i.e., the light-transmitting insulating material layer 50 is composed of a first light-transmitting insulating layer 51 and a second light-transmitting insulating layer 52 on the first light-transmitting insulating layer 51. Wherein the refractive index of the first light-transmitting insulating layer 51 is greater than the refractive index of the second light-transmitting insulating layer 52. In one embodiment, the first light-transmitting insulating layer 51 may be a phenyl silicone rubber layer (refractive index > 1.5), and the second light-transmitting insulating layer 52 may be a methyl silicone rubber layer (refractive index < 1.43). In other embodiments, the refractive index of the first light-transmitting insulating layer 51 may also be smaller than the refractive index of the second light-transmitting insulating layer 52, where the first light-transmitting insulating layer 51 is a methyl silica gel layer and the second light-transmitting insulating layer 52 is a phenyl silica gel layer.

In order to improve the light extraction efficiency of the high voltage light emitting diode chip, a first current blocking layer 61 is further disposed below the metal bridging line 40. The light-emitting element further includes a second current blocking layer 62 and a transparent conductive layer 70 stacked on the P-type layer 213, and a third current blocking layer 63 provided between the N-electrode 215 and the N-type layer 211. The P electrode 214 is electrically connected to the P-type layer 213 through the transparent conductive layer 70 and the second current blocking layer 62, and the N electrode 215 is electrically connected to the N-type layer 211 through the third current blocking layer 63. The surface of the high voltage led chip is further provided with a protection layer 80, and the protection layer 80 covers the transparent conductive layer 70 and the surface of the N-type layer 213.

In the high-voltage light emitting diode chip of the present invention, since the metal bridging line 40 is flat above the trench 30, and there is no turning point, the coating property is enhanced, so that the anti-aging capability is improved; the longitudinal section of the isolation channel 30 is set to be square, and the width of the channel 30 is reduced, so that the light emitting area of the chip is increased; the light-transmitting insulating material layer 50 filled in the channel 30 includes a high refractive index light-transmitting insulating material layer 51 and a low refractive index light-transmitting insulating material layer 52, so that the light extraction efficiency of the chip is improved.

Example 2

Referring to fig. 2, in the present embodiment, the light-transmitting insulating material layer 50 is formed by alternately laminating a first light-transmitting insulating layer 51 and a second light-transmitting insulating layer 52 on the first light-transmitting insulating layer 51. Wherein the refractive index of the first light-transmitting insulating layer 51 is greater than the refractive index of the second light-transmitting insulating layer 52. In one embodiment, the first light-transmitting insulating layer 51 may be a phenyl silicone rubber layer (refractive index > 1.5), and the second light-transmitting insulating layer 52 may be a methyl silicone rubber layer (refractive index < 1.43). In other embodiments, the refractive index of the first light-transmitting insulating layer 51 may also be smaller than the refractive index of the second light-transmitting insulating layer 52, where the first light-transmitting insulating layer 51 is a methyl silica gel layer and the second light-transmitting insulating layer 52 is a phenyl silica gel layer.

It should be understood that the above-mentioned embodiments are the preferred embodiments of the present invention, and the scope of the present invention is not limited to these embodiments, and any changes made according to the present invention are all included in the protection scope of the present invention.

Claims

1. A high voltage light emitting diode chip comprising at least:

A substrate and a light emitting stack on the substrate;

The light-emitting laminated layer comprises a plurality of light-emitting elements which are electrically isolated through channels, and each light-emitting element comprises an N-type layer, a light-emitting layer, a P-type layer, a P-electrode and an N-electrode which are sequentially laminated;

The metal bridging line is positioned above the channel and is electrically connected with the adjacent light-emitting elements;

The method is characterized in that: and filling a light-transmitting insulating material layer in the channel, wherein the light-transmitting insulating material layer comprises a first light-transmitting insulating layer and a second light-transmitting insulating layer which have different refractive indexes.

2. The high voltage light emitting diode chip as claimed in claim 1, wherein: the light-transmitting insulating material layer is of a double-layer structure or a multi-layer structure.

3. The high voltage light emitting diode chip as claimed in claim 2, wherein: the light-transmitting insulating material layer consists of a first light-transmitting insulating layer and a second light-transmitting insulating layer positioned on the first light-transmitting insulating layer.

4. the high voltage light emitting diode chip as claimed in claim 2, wherein: the light-transmitting insulating material layer is formed by alternately laminating a first light-transmitting insulating layer and a second light-transmitting insulating layer positioned on the first light-transmitting insulating layer.

5. The high-voltage light-emitting diode chip as claimed in claim 3 or 4, wherein: the refractive index of the first light-transmitting insulating layer is greater than that of the second light-transmitting insulating layer.

6. The high voltage light emitting diode chip as claimed in claim 5, wherein: the first light-transmitting insulating layer is a phenyl silica gel layer, and the second light-transmitting insulating layer is a methyl silica gel layer.

7. The high-voltage light-emitting diode chip as claimed in claim 3 or 4, wherein: the refractive index of the first light-transmitting insulating layer is smaller than that of the second light-transmitting insulating layer.

8. The high voltage light emitting diode chip as claimed in claim 7, wherein: the first light-transmitting insulating layer is a methyl silica gel layer, and the second light-transmitting insulating layer is a phenyl silica gel layer.

9. the high voltage light emitting diode chip as claimed in claim 1, wherein: the N-type layer of the light-emitting element is provided with a step, and the top of the light-transmitting insulating material layer is flush with the step, so that the metal bridging line above the channel is flat.

10. The high voltage light emitting diode chip as claimed in claim 1, wherein: the longitudinal section of the channel is square.

11. The high voltage light emitting diode chip as claimed in claim 1, wherein: a first current blocking layer is arranged below the metal bridging line.