CN209537621U - A kind of fixture for semiconductor laser side cavity surface film coating - Google Patents
A kind of fixture for semiconductor laser side cavity surface film coating Download PDFInfo
- Publication number
- CN209537621U CN209537621U CN201822189854.5U CN201822189854U CN209537621U CN 209537621 U CN209537621 U CN 209537621U CN 201822189854 U CN201822189854 U CN 201822189854U CN 209537621 U CN209537621 U CN 209537621U
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- CN
- China
- Prior art keywords
- chip
- semiconductor laser
- bottom plate
- groove
- cavity surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 239000007888 film coating Substances 0.000 title claims abstract description 12
- 238000009501 film coating Methods 0.000 title claims abstract description 12
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 21
- 230000007017 scission Effects 0.000 claims abstract description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 20
- 230000013011 mating Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000009194 climbing Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model proposes a kind of fixtures for semiconductor laser chip side cavity surface film coating, and structure is concise, of less demanding to clamp precision, can quickly clamp chip, avoid polluting or damaging the face chip P and Cavity surface in operation.The fixture for being used for semiconductor laser side cavity surface film coating includes bottom plate, positioning side baffle, GaAs cleavage piece and upper cover plate；The upper surface of bottom plate offers parallel a plurality of groove, and groove penetrates through bottom plate along its length, and side corresponding with bottom plate is vertical；The length of groove is less than the length of semiconductor laser chip, and the main part in the face chip P and the face N is in recess region；The depth of groove is equal to chip thickness；The both ends of groove in the longitudinal direction are the smallest position of its width, and are only contacted in the direction of the width at this position with chip；GaAs cleavage piece is integrally covered in the surface for the semiconductor laser chip placed in bottom plate and its groove, and GaAs cleavage piece is compressed and fixed by upper cover plate.
Description
Technical field
The utility model belongs to semiconductor laser field, is related to a kind of for noise spectra of semiconductor lasers (cm-bar)
The fixture of side chamber face progress plated film.
Background technique
Semiconductor laser chip be also referred to as semiconductor laser diode or abbreviation laser diode (Laser Diode,
LD), the laser that can emit specific wavelength is a kind of important semiconductor photoelectronic device.Semiconductor laser array has body
The advantages that product is small, light-weight, the service life is long, high-efficient, not only can be used as the pumping source of Solid State Laser, but also can be used for directly as light source
Material processing, in numerous areas extensive application.
Semiconductor laser chip is technological core and the source of entire laser industry chain, is to drive entire industry development
It is crucial.Superpower semiconductor laser array basic unit for laser machining industry is cm-bar.Semiconductor laser core
Piece mainly uses indium solder and Jin Xi to be encapsulated in heat sink upper composition laser device.Indium solder has the obvious advantage of slicken solder: molten
Point is low, can be with low-temperature sintering.But meanwhile indium solder packaging long-term reliability is poor, solder be easy to happen creep climbing arrive
Chip sides make chip conducting electric leakage, influence laser power and service life.So semiconductor swashs in semiconductor laser technique
The processing of light device chip surface is most important, it determines performance and the service life of device.Semiconductor laser chip material itself
(especially Cavity surface optical film) is very fragile, if so clamp structure design is unreasonable, chip clamping process easily cause surface scratching,
Pollution and cavity surface film damage, and the Cavity surface of semiconductor laser chip is its most important part, slight pollution or damage
May serious influence be caused on the Performance And Reliability of chip.
Currently used side cavity surface film coating mode has the following problems:
1, clamp structure is complicated, and component is more, requires height to clamp precision, and machining yield is low, and processing cost is high；
2, semiconductor laser chip structure is accurate, and tolerance is small, high to personnel's skill requirement, and chip is as put in operating process
It puts and the face chip P and Cavity surface is inaccurately easily caused to pollute or damage, cause yield rate low.
Utility model content
The utility model proposes a kind of fixture for being used for the side semiconductor laser chip (cm-bar) cavity surface film coating, structure letters
It is bright, it is of less demanding to clamp precision, chip can be quickly clamped, avoids polluting or damaging the face chip P and chamber in operation
Face.
Technical solutions of the utility model are as follows:
This be used for semiconductor laser side cavity surface film coating fixture, including bottom plate, positioning side baffle, GaAs cleavage piece and
Upper cover plate；The upper surface of the bottom plate offers parallel a plurality of groove, and groove penetrates through bottom plate along its length, and with bottom plate phase
The side answered is vertical, and each groove is to place a semiconductor laser chip；The length of groove is less than semiconductor laser
The length of chip, chip side Cavity surface stretches out bottom panel side, the main part in the face chip P and the face N when chip is in place
Divide and is in recess region；The depth of groove is equal to chip thickness (size from the face P to the face N)；Groove in the longitudinal direction two
End is the smallest position of its width, and is only contacted in the direction of the width (front cavity surface, rear facet) at this position with chip；The arsenic
Change gallium cleavage piece to be integrally covered in the surface of the semiconductor laser chip placed in bottom plate and its groove (usual chip P is faced
On), GaAs cleavage piece is compressed and is fixed by upper cover plate；The oriented side baffle plate setting swashs in bottom panel side as semiconductor
Positioning auxiliaring tool when light device chip is placed, and make multiple semiconductor laser chips chip side when being placed in corresponding recesses
Cavity surface is concordant.
Based on above scheme, the utility model has also further made following optimization:
Two sides of the groove are arc.
Positioning side baffle is L-type, and the lower side for meeting L-type is bonded with bottom panel side, and lower than height locating for groove
Position, the upper side of L-type is as the contact surface with chip side Cavity surface, so that the position that chip stretches out bottom panel side is hanging, it is fixed
Position side baffle is only contacted with chip side Cavity surface.
The lower side and bottom panel side for positioning side baffle are provided with concave-convex mating structure, in order to quickly position.
Upper cover plate and bottom plate are cooperated using tenon groove structure.
The utility model has following technical effect that
1, clamp assembly is simple, easy processing, easy to operate, it can be ensured that semiconductor laser chip side passivating cavity surface plated film
Uniformity and consistency, can prevent semiconductor laser chip solder climbing lead to leaky, significantly improve semiconductor swash
Light device chip service life.
2, reusable, high reliablity.
3, duty cycle is short, can mass application, high production efficiency.
4, registration, quickly.
Detailed description of the invention
Fig. 1 is the effect picture after fixture assembly.
Fig. 2 is fixture right side structural representation.
Fig. 3 is the structural schematic diagram of bottom plate.
Fig. 4 is semiconductor laser chip structure schematic diagram.
Fig. 5 is the structural schematic diagram of bottom plate and oriented side baffle combination.
Fig. 6 is that chip is placed on the schematic diagram in arc groove.
Fig. 7 is the schematic diagram that bottom plate and chip upper surface cover GaAs cleavage piece.
Fig. 8 is the intention that GaAs cleavage piece upper surface covers upper cover plate.
Fig. 9 is the schematic diagram for removing positioning side baffle.
Drawing reference numeral explanation:
1- bottom plate, 101- arc groove；2- positions side baffle；3- semiconductor laser chip, the face 301- chip P, 302-
The face chip N, 303- chip front cavity surface, 304- chip rear facet, 305- chip side Cavity surface；4- GaAs cleavage piece；5- upper cover plate.
Specific embodiment
The semiconductor laser chip side chamber face coating clamp includes bottom plate 1, positioning side baffle 2,4 and of GaAs cleavage piece
Upper cover plate 5,1 upper surface of bottom plate offer the groove of a plurality of perforation.After bottom plate 1 and positioning side baffle 2 assemble, premenstrual back cavity plated film
And several semiconductor laser chips 3 (cm-bar) P of trimming processing is accordingly placed on up in each groove of bottom plate 1；
It is limited and is positioned by positioning 2 noise spectra of semiconductor lasers chip 3 of side baffle.The size of groove is small compared with chip, so that partly leading
1 certain size of bottom plate is stretched out at 3 both ends of body laser chip.GaAs cleavage piece 4 is covered on 3 upper surface of semiconductor laser chip
(face P), to protect 3 upper surface of semiconductor laser chip (face P) luminous zone not by evaporated film and damage.Upper cover plate 5 covers
It after on GaAs cleavage piece 4, is closely combined with bottom plate 1, completes the clamping and protection of noise spectra of semiconductor lasers chip 3.
Preferred embodiment is as shown in Figures 1 to 9, the fixture include assembly bottom plate 1, positioning side baffle 2, semiconductor swash
Light device chip 3, GaAs cleavage piece 4, upper cover plate 5.By bottom plate 1 and after positioning side plate 2 by assembling, by semiconductor laser
The face chip P 301 of device chip 3 is placed on upward in the arc groove 101 on bottom plate 1.It can be kept away using 101 structure of arc groove
Exempt from that chip front cavity surface 303 and chip rear facet 304 are polluted or damaged when chip of laser 3 is placed.The side chamber face 305 of chip and fixed
The vertical face contact of L shape step of position side baffle 2, by reasonable size design, so that chip equidistantly stretches out bottom plate 1.Laser
The face chip P 301 covers GaAs cleavage piece 4, guarantees the face chip P 301, the face 302 chip N is pollution-free and damage.Upper cover plate 5 is pressed
On GaAs cleavage piece 4；Positioning side baffle 2 is removed, fixture remainder (see Fig. 9) is put into PECVD device plasma
The vapour deposition process of enhancing chemistry is passivated plated film, guarantees chip side Cavity surface 305,302 end of the face chip P 301 and the face chip N
Uniformly vapor deposition insulating layer.
The plated Cavity surface film of Cavity surface before and after chip of laser, the groove by rationally designing grip size and arc can be protected
Cavity surface film will not be contaminated and damage before and after shield chip of laser.
Semiconductor laser chip 3 is accurately positioned by positioning side baffle 2, region is deposited, avoid to front and back Cavity surface and electric current
The pollution of injection region.The vertical face contact of L shape step of chip side Cavity surface 305 and positioning side baffle 2, is set by reasonable size
Meter, so that chip equidistantly stretches out bottom plate 1.
Positioning side baffle 2 and bottom plate 1 can be fixed by limiting slot (concave-convex mating structure), combined, dismounted simple, province
When, to quickly position.It is also possible to consider carry out being bolted auxiliary fastening again.
Upper cover plate 5 and bottom plate 1 are cooperated using tenon groove structure, using 5 weight compression GaAs cleavage piece 4 of upper cover plate and its under
The semiconductor laser chip 3 of side, mortise-tenon joint fits together perfectly, and can avoid pushing process and the movement in horizontal direction occurs.
As shown in figure 9, after being clamped by fixture to chip, with the vapour deposition process of plasma enhanced chemical to core
Piece side chamber face 305 and the face segment chip P 301, the face chip N 302 are passivated plated film, replace traditional observing and controlling sputter coating.It can
PECVD device is made full use of to carry out high-volume operation, working hour is short, and it is high-efficient, while product yield can be significantly improved.
It is as follows that operating procedure is introduced in conjunction with each attached drawing:
1, placing clamp bottom plate 1 (see Fig. 3).
2, fixture is positioned into side baffle 2 and the horizontal assembling of bottom plate 1 (see Fig. 5).
3, the face several chip P 301 is placed on upward in 1 arc groove 101 of bottom plate, by the L shape knot for positioning side baffle 2
Structure positions (see Fig. 6) chip.
4, GaAs cleavage piece 4 is covered on the face chip P 301 (see Fig. 7).
5, fixture cover plate 5 is pressed on GaAs cleavage piece 4 (see Fig. 8).
6, remove fixture positioning side baffle 2 (see Fig. 9).
7, PECVD device will be put into chip side Cavity surface after semiconductor laser chip 3 (such as Fig. 9) cleaning of fixture clamping
The vapour deposition process passivation plating in the face 305 and chip P 301,302 end sections region using plasma of the face chip N enhancing chemistry
Film.
Semiconductor laser chip 3 is after fixture clamps, by the vapour deposition process of plasma enhanced chemical in chip
Side chamber face 305 grows layer of sin insulating layer, can effectively protect chip side Cavity surface 305, prevents indium solder device chip side chamber face
305 there is solder climbing, lead to leaky, can significantly improve the service life of semiconductor laser device.
Claims (5)
1. a kind of fixture for semiconductor laser side cavity surface film coating, it is characterised in that: including bottom plate (1), positioning side baffle
(2), GaAs cleavage piece (4) and upper cover plate (5)；
The upper surface of the bottom plate (1) offers parallel a plurality of groove, and groove penetrates through bottom plate (1) along its length, and with bottom
The corresponding side of plate (1) is vertical, and each groove is to place a semiconductor laser chip (3)；The length of groove is less than half
The length of conductor laser chip (3), so that chip side Cavity surface (305) can stretch out bottom plate (1) side when chip is in place,
The main part in the face chip P (301) and the face chip N (302) is in recess region；The depth of groove is equal to chip thickness；Groove
Both ends in the longitudinal direction are the smallest position of its width, and are only contacted in the direction of the width at this position with chip；
The GaAs cleavage piece (4) is integrally covered in the semiconductor laser chip (3) placed in bottom plate (1) and its groove
GaAs cleavage piece (4) is compressed and is fixed by surface, upper cover plate；
The positioning side baffle (2) is set to bottom plate (1) side, and positioning when placing as semiconductor laser chip (3) is auxiliary
Assistant engineer's tool, and keep multiple semiconductor laser chips (3) chip side Cavity surface (305) when being placed in corresponding recesses concordant.
2. the fixture according to claim 1 for semiconductor laser side cavity surface film coating, it is characterised in that: the groove
Two sides be arc.
3. the fixture according to claim 1 for semiconductor laser side cavity surface film coating, it is characterised in that: positioning side block
Plate (2) is L-type, and the lower side for meeting L-type is bonded with bottom plate (1) side, and is lower than height and position locating for groove, L-type
Upper side is as the contact surface with chip side Cavity surface (305), so that the position that chip stretches out bottom plate (1) side is hanging, positioning
Side baffle (2) is only contacted with chip side Cavity surface (305).
4. the fixture according to claim 1 or 3 for semiconductor laser side cavity surface film coating, it is characterised in that: described
The lower side and bottom plate (1) side for positioning side baffle (2) are provided with concave-convex mating structure, in order to quickly position.
5. the fixture according to claim 1 for semiconductor laser side cavity surface film coating, it is characterised in that: upper cover plate
(5) cooperated with bottom plate (1) using tenon groove structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822189854.5U CN209537621U (en) | 2018-12-25 | 2018-12-25 | A kind of fixture for semiconductor laser side cavity surface film coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822189854.5U CN209537621U (en) | 2018-12-25 | 2018-12-25 | A kind of fixture for semiconductor laser side cavity surface film coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209537621U true CN209537621U (en) | 2019-10-25 |
Family
ID=68266146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822189854.5U Withdrawn - After Issue CN209537621U (en) | 2018-12-25 | 2018-12-25 | A kind of fixture for semiconductor laser side cavity surface film coating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209537621U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109576676A (en) * | 2018-12-25 | 2019-04-05 | 西安立芯光电科技有限公司 | A kind of fixture for semiconductor laser side cavity surface film coating |
| CN115274541A (en) * | 2022-07-28 | 2022-11-01 | 陕西理工大学 | A semiconductor laser chip end face coating clamping fixture |
-
2018
- 2018-12-25 CN CN201822189854.5U patent/CN209537621U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109576676A (en) * | 2018-12-25 | 2019-04-05 | 西安立芯光电科技有限公司 | A kind of fixture for semiconductor laser side cavity surface film coating |
| CN109576676B (en) * | 2018-12-25 | 2023-12-29 | 西安立芯光电科技有限公司 | Clamp for coating side cavity surface of semiconductor laser |
| CN115274541A (en) * | 2022-07-28 | 2022-11-01 | 陕西理工大学 | A semiconductor laser chip end face coating clamping fixture |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20191025 Effective date of abandoning: 20231229 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20191025 Effective date of abandoning: 20231229 |