CN209401630U - Pixel substrate with quantum dots - Google Patents

Abstract

The utility model discloses a pixel base plate of utensil quantum dot, this pixel base plate of utensil quantum dot contains: a transparent substrate; a black matrix layer formed on the surface of the transparent substrate and defining a plurality of pixel spaces; a plurality of quantum dot glue layers respectively formed in the pixel space; and the black matrix layer is made by hardening a negative photoresist material and forms an included angle smaller than 90 degrees with the transparent substrate, so that the pixel spaces form an inverted trapezoidal bowl-shaped structure. Through the utility model discloses, realized with the pixel base plate of simplest and simplest processing procedure preparation utensil quantum dot to let the quantum dot fill easily, the production yield improves, further can accelerate the special technological efficiency that the quantum dot applies to the display technology process.

Description

Pixel substrate with quantum dots

technical field

The utility model relates to a quantum dot technology, in particular to a pixel substrate with quantum dots.

Background technique

Quantum dots (Quantum Dots) as the application material of flat-panel display technology have become the display technology of the next generation of display technology. Quantum dots have the following characteristics, their conversion spectrum can be adjusted with size (by adjusting the nanocrystal size of quantum dots, the size is between 1nm and 20nm), high luminous efficiency, good luminescence stability and other optical properties. In addition, most of the quantum dots are inorganic compounds, which have stable performance and excellent durability. This makes quantum dot technology the focus of next-generation display technology.

At present, some manufacturers have developed display technologies such as Quantum Dots Light Emitting Diodes (QD-LEDs) and Quantum Dots Organic Light Emitting Diodes (QD-LEDs). The current development is mainly to use light emitting diodes or organic light emitting diodes as the light source of quantum dots, so that they can be converted to the desired spectrum of light. No matter which application method is used, since the process technology of quantum dots is very different from that of light-emitting diodes or organic light-emitting diodes, the production of pixel substrates composed of quantum dots must be separated from the two processes at present. .

Therefore, how to simplify the process and structure of the pixel substrate formed by quantum dots has become a development direction that manufacturers of quantum dot display technology seek.

Utility model content

In order to achieve the above-mentioned purpose, the present invention provides a pixel substrate with quantum dots, which can achieve the simplest manufacturing process to produce a pixel substrate with quantum dots, and facilitates the perfusion of quantum dots, improves the production yield, and further accelerates the application of quantum dots in the application of quantum dots. Shows the special technical effect of the technical process.

According to the present invention, a pixel substrate with quantum dots is provided, comprising: a transparent substrate; a black matrix layer formed on the surface of the transparent substrate to define a plurality of pixel spaces; a plurality of quantum dot glue layers, respectively is formed in the pixel space; and wherein, the black matrix layer is made of negative photoresist material, and the black matrix layer and the transparent substrate form an included angle less than 90 degrees, so that the pixel spaces are formed An inverted trapezoidal bowl-like structure.

In order to make the above-mentioned and other objects, features, and advantages of the present invention more clearly understood, several preferred embodiments are given below, and are described in detail as follows in conjunction with the accompanying drawings.

Description of drawings

1 is a flowchart of a method for manufacturing a pixel substrate with quantum dots disclosed in the present invention;

2A-2E are a flow chart for making a cross-sectional view of part 2 of FIG. 3B;

FIG. 3A is a schematic diagram illustrating the pixel substrate 10 with quantum dots and the corresponding light-emitting substrate 20 of the present invention;

FIG. 3B is an enlarged schematic view of the pixel substrate 10 with quantum dots and the corresponding part 2 of the present invention; and

FIG. 3C is a schematic cross-sectional view of part 2 of the pixel substrate 10 with quantum dots of the present invention along the section line A-A.

Symbol Description:

2: local;

10: a pixel substrate with quantum dots;

11: transparent substrate;

12: photoresist layer;

12-1: black matrix layer;

20: light-emitting layer;

30-1, 30-2, 30-3, 30-4, 30-5, 30-6: quantum dot glue layer;

40: photomask;

80: ultraviolet light;

90: light;

91: Target light.

Detailed ways

According to an embodiment of the present invention, the present invention uses an exposure and development process to fabricate a pixel substrate with quantum dots, so as to fabricate a high-precision black matrix layer, so that the quantum dots can be accurately poured into the pixels defined by the black matrix layer. In the space, the pixel substrate with quantum dots required for the next-generation display technology with simple process and high resolution can be used as a quantum dot display.

Please refer to FIG. 1 , which is a flowchart of a method for fabricating a pixel substrate with quantum dots disclosed in the present invention. Please also refer to FIGS. 2A-2E (the fabrication process of the cross-sectional view of part 2 of FIG. 3B ), which includes quantum dots. The manufacturing method of the pixel substrate includes steps S101 to S105.

Step S101 : forming a photoresist layer on the surface of the transparent substrate. For example, using a spray coating method, a photoresist with a thickness of 1.5um to 20um is gradually formed; or, a photoresist with a thickness of 15um to 20um is formed. Since the photoresist layer will be subsequently fabricated as a permanent material layer, negative-type photoresist is selected for fabrication. In addition, the photoresist layer will be made as a black matrix layer, therefore, a negative photoresist material doped with black pigment can be selected. As shown in FIGS. 2A and 2B , in the scope of the enlarged part 2 , a photoresist layer 12 with a thickness between 1.5 μm and 20 μm is formed on the transparent substrate 11 by spraying.

Step S102 : exposing the photoresist layer with a photomask. The mask is a mask pattern corresponding to the black matrix layer, which can be exposed to ultraviolet light. As shown in FIG. 2C , the photoresist layer 12 can be exposed by the photomask 40 under the exposure of the ultraviolet light 80 .

Step S103 : removing the unexposed photoresist layer, and making the unexposed photoresist layer into a black matrix layer with a trapezoidal structure to define a plurality of pixel spaces, and the black matrix layer and the transparent substrate are formed An included angle less than 90 degrees. Since the selected photoresist material is negative type photoresist, the unexposed part will be removed by the developer. The remaining part is the black matrix layer reserved for the utility model. In addition, since the angle between the black matrix layer to be formed and the transparent substrate is less than 90 degrees and has a trapezoidal structure, an appropriate developer and developing time can be selected to form the trapezoidal structure during the development process. The angle of the included angle is between 45 and 90 degrees, or the angle of the included angle is between 60 and 85 degrees. Please refer to FIG. 2D , the unexposed part forms the black matrix layer 12 - 1 .

Step S104: curing the black matrix layer. For example, the black matrix layer is further cured into a permanent material layer by means of thermal curing or photo curing.

Step S105 : each of the plurality of pixel spaces is filled with the quantum dot glue layer corresponding to the corresponding pixel material. Wherein, the thickness of the quantum dot glue layer is smaller than the thickness of the black matrix layer, and is between 1um and 15um. Referring to FIG. 2E , the quantum dot glue layers 30-1, 30-2, 30-3, 30-4, 30-5, and 30-6 are respectively independently formed in the pixel space formed by the black matrix layer 12-1.

The transparent substrate 11 may be a PET (polyethylene terephthalate, PET for short) substrate, a COP substrate, a PC substrate, a CPI substrate, a glass substrate, a polyvinyl butyral resin (PVB for short) ) substrate, etc. The light transmittance of the transparent substrate 10 in the visible light band is more than 80%.

The photoresist of the present invention uses a negative photoresist. Preferably, the photoresist layer of the present invention uses a high-resolution negative photoresist. The material of the photoresist layer is mainly composed of polymer resin (Resin), photo initiator (Photo initiator), monomer (Monomer), solvent (Solvent), and additives (Additives).

Among the materials of the photoresist layer, the functions of polymer resin (Resin) lie in adhesion, developability, pigment dispersion, fluidity, heat resistance, chemical resistance, and analytical ability; photo initiator (Photo initiator) The function of the solvent lies in the photosensitive characteristics and analytical ability; the function of the monomer (Monomer) is in the adhesion, developability and analytical ability; the function of the solvent (Solvent) is in the viscosity and coating properties; the function of the additive (Additives) is in the coating property. , leveling and foaming.

The polymer resin (Resin) can be a polymer or copolymer containing a carboxylic acid group (COOH), such as acrylic (Acrylic) resin, acrylic-epoxy (Epoxy) resin, acrylic _ melamine ( Melamine) resin, acrylic-styrene (Styrene) resin, phenol-phenolic (Phenolic Aldehyde) resin and other resins, or any mixture of the above resins, but not limited thereto. The weight percent of resin in the photoresist may range from 0.1% to 99%.

Monomers can be divided into water-insoluble monomers and water-soluble monomers, wherein, water-insoluble monomers (water-insoluble Monomer) can be penerythritol triacrylate, trimethyl ether propane triacrylate, trimethyl ether propane Trimethacrylate, Tris, Di-ethanol Isocyanate Triacrylate, Di, Trimethanol Propane Tetraacrylate, Diisopentaerythritol Pentaacrylate, Pentaacrylate, Isopentaerythritol Tetraacetate; Dihexyltetraacetate Alcohol, diisopentaerythritol hexaacetate, or multifunctional monomer, dendrimer/multiplex acrylate oligomer, multiplex polyether acrylate, urethane. The water-soluble monomer can be a monomer of Ethoxylated (polyoxyethylene) (referred to as EO) base and Propoxylated (polyoxypropylene) (referred to as PO); for example: di-(di- Oxyethylene oxyethylene) vinyl acrylic acid unitary purpose, pentapolyoxyethylene trimethanol propane triacrylate, triatric oxide di, di-bis-p-phenol methane diacrylate, thirty oxyethylene di, di-bi-p Phenolmethane dimethacrylate unitary, eicosoxyethylene trimethanol propane triacrylate, pentadecyloxyethylene trimethanol propane triacrylate, methyloxy 550 oxyethylene monomethacrylate, 200 oxyethylene Ethylene Diacrylate, Tetrahexoxyethylene Diacrylate, Tetrahexoxyethylene Dimethacrylate, Hexaethylene Diacrylate, Hexaethylene Dimethacrylate, Polyoxypropylene Monomethacrylate . Of course, two or more monomers (monomers) can also be added and mixed to form a co-monomer (co-monomer). The weight percent of the monomer or comonomer in the photoresist can range from 0.1% to 99%.

Photo initiator can be selected from acetophenone, benzophenone, bis_imidazole, benzoin, benzoin Acyl compound (Benzil), α-amino ketone compound (α-amino ketone), acyl phosphine oxide compound (Acyl phosphine oxide) or benzoyl formate compound, any combination of the above photoinitiators, but Not limited to this. The weight percent of the photoinitiator in the photoresist can range from 0.1 to 10%.

The solvent (Solvent) can be ethylene glycol monopropylether, di-ethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol ethyl ether ( ethyleneglycol monoethyl ether), diethylene glycol monomethyl ether (di-ethylene glycol mono-methylether), diethylene glycol monoethyl ether (di-ethylene glycol mono-ethylether), di-ethylene glycol monobutyl ether (di-ethylene glycol mono-butyl ether) ether), propylene glycol mono-methyl ether acetate, propylene glycol mono-ethyl ether acetate, propylene glycol mono-propyl ether acetate, 3-ethoxy Ethyl propionate (ethyl3_ethoxy propionate), etc., or any mixture of the above solvents, but not limited thereto. The weight percent of the solvent in the photoresist may range from 0.1% to 99%.

The additive is generally a pigment dispersant, which is a necessary ingredient for photoresist containing pigments. It is generally a non-ionic interface active agent, such as: Solsperse39000, Solsperse21000. The weight percentage of this dispersant in the photoresist can range from 0.1 to 5%.

In step S102 of the present invention, when exposing, it further includes: (1) Substrate Clean; (2) Coating; (3) Pre-baking; (4) Exposure (exposure); (5) processing steps such as developing.

Next, please refer to FIG. 3A , which illustrates a schematic diagram of the pixel substrate 10 with quantum dots and the corresponding light-emitting substrate 20 of the present invention; FIG. 3B is the pixel substrate 10 with quantum dots of the present invention and its corresponding 3C is a schematic cross-sectional view of part 2 of the pixel substrate 10 with quantum dots of the present invention along the section line A-A.

3A-3C disclose the pixel substrate 10 with quantum dots of the present invention, which includes: a transparent substrate 11, a black matrix layer 12-1 and a plurality of quantum dot adhesive layers 30-1, 30-2, 30-3 , 30-4, 30-5, 30-6. The black matrix layer 12-1 is formed on the surface of the transparent substrate 10 to define a plurality of pixel spaces; a plurality of quantum dot glue layers 30-1, 30-2, 30-3, 30-4, 30-5, 30- 6 are respectively formed in the pixel space. The black matrix layer 12-1 is made of hardened negative photoresist material, and forms an included angle of less than 90 degrees with the transparent substrate 10, so that the plurality of pixel spaces form an inverted trapezoidal bowl-shaped structure, such as shown in Figure 3C.

In FIG. 3A, it is an example in which the light-emitting layer 20 is used. The light-emitting layer 20 may be an LED light-emitting layer or an OLED light-emitting layer. The light 90 emitted by the control light-emitting layer 20 can be converted into target light 91 after being converted by the pixel substrate 10 with quantum dots.

Wherein, the thickness of the black matrix layer 12-1 is between 1.5um and 10um; in another embodiment of the present invention, the thickness of the black matrix layer is between 10um and 20um. Wherein, the angle of the included angle is between 45 degrees and 90 degrees; in another embodiment of the present invention, the angle of the included angle is between 60 degrees and 85 degrees. Among them, the thickness of the plurality of quantum dot glue layers 30-1, 30-2, 30-3, 30-4, 30-5, and 30-6 is smaller than the thickness of the black matrix layer 12-1, and is between 1um and 9um. between.

The above are only the preferred embodiments of the present utility model, and are not intended to limit the scope of the present utility model patent. Any equivalent structure or equivalent process transformation made by using the contents of the present utility model description and accompanying drawings, or directly or indirectly applied to other related The technical field of the present invention is similarly included in the scope of patent protection of the present invention.

Claims (7)

1. it is a kind of have quantum dot pixel substrate, characterized by comprising:

One transparent substrate；

One black matrix layer is formed in the surface of the transparent substrate, defines multiple pixel spaces；

Multiple quantum dot glue-lines, are respectively formed in the pixel space；And

Wherein, which is made by the hardening of minus photoresist, and the black matrix layer and the transparent substrate form one Angle less than 90 degree, and make the bowl structure of one inverted trapezoidal of multiple pixel space composition.

2. as described in claim 1 tool quantum dot pixel substrate, which is characterized in that the thickness of the black matrix layer between 1.5um is between 10um.

3. the pixel substrate of tool quantum dot as described in claim 1, which is characterized in that the thickness of the black matrix layer is between 10um To between 20um.

4. the pixel substrate of tool quantum dot as described in claim 1, which is characterized in that the angle of the angle is between 45 degree to 90 Between degree.

5. the pixel substrate of tool quantum dot as described in claim 1, which is characterized in that the angle of the angle is between 60 degree to 85 Between degree.

6. the pixel substrate of tool quantum dot as claimed in claim 2 or claim 3, which is characterized in that the thickness of multiple quantum dot glue-line Degree is less than the black matrix layer, and between 1um between 15um.

7. the pixel substrate of tool quantum dot as claimed in claim 2 or claim 3, which is characterized in that the thickness of multiple quantum dot glue-line Degree is less than the black matrix layer, and between 1um between 9um.