CN209166667U - A kind of two stratification temperature sensor of film thermocouple - Google Patents
A kind of two stratification temperature sensor of film thermocouple Download PDFInfo
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- CN209166667U CN209166667U CN201821930378.1U CN201821930378U CN209166667U CN 209166667 U CN209166667 U CN 209166667U CN 201821930378 U CN201821930378 U CN 201821930378U CN 209166667 U CN209166667 U CN 209166667U
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- film thermocouple
- thermocouple
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Abstract
The utility model discloses a kind of two stratification temperature sensors of film thermocouple, including temperature element and sensor structure, it is characterized in that: temperature element is film thermocouple type temperature element, film thermocouple includes silicon substrate and the double-layer films sputtered on a silicon substrate, double-layer films are connected with the thermo wires of respective identical material respectively, and double-layer films junction forms hot junction.The utility model forms film thermocouple using magnetron sputtering method, in the hole for two different depths that merging probe support is accomplished fluently, probe is embedded to tested inside of solid material, temperature at two inside thin film thermoelectric couple sensor probe at different depth measuring point measures, and measures to realize the temperature at different depth measuring point inside of solid material two.The utility model film thermocouple has light weight, and response time short advantage can greatly improve the accuracy of measurement of sensor.
Description
Technical field
The utility model belongs to temperature sensor field.
Background technique
The temperature of inside of solid material different depth position is measured, in -40 DEG C of measurement range~1100 DEG C, thermometric
The most of element are traditional K-type thermocouples, and are directly placed into it in hole that inside of solid material is accomplished fluently, by thermocouple
After contacting with the measured position of solid material, through heat transfer after a period of time, after reaching thermal balance, thermocouple can be measured
The temperature of the solid material position.Although K-type Thermocouples Technology comparative maturity traditional first, the response time is slower, accidentally
Difference is larger.Secondly, it is complex in assembly and accurate that thermocouple is directly placed in the method tested in solid material
It spends not high.
Utility model content
The purpose of the utility model is to provide a kind of two stratification temperature sensor of film thermocouple, use film thermocouple as
Temperature element, measures the temperature inside of solid material two at different depth measuring point, and film thermocouple has a light weight, when response
Between short advantage, the accuracy of measurement of sensor can be greatly improved.It is slower to solve conventional thermocouple response, and directly surveys
Measure the unworkable problem of assembly of material internal different depth temperature.
The technical solution of the utility model is: a kind of two stratification temperature sensor of film thermocouple, including temperature element and
Sensor structure, it is characterized in that: temperature element is film thermocouple type temperature element, film thermocouple include silicon substrate and
The double-layer films sputtered on a silicon substrate, double-layer films are connected with the thermo wires of respective identical material respectively, double-layer films junction
Hot junction is formed, the temperature at different depth measuring point at sensor probe inside two is measured at hot junction.
A kind of two stratification temperature sensor of film thermocouple, it is characterized in that: film thermocouple includes silicon substrate and in silicon
The NiCr film and NiSi film sputtered on substrate, NiCr film are connect with a thermo wires, and NiSi film and another thermo wires connect
It connects, one hot junction of NiCr film and the formation of NiSi film junction, to different deep at sensor probe inside two at hot junction
Temperature at degree measuring point measures.
Wherein Ni:Cr mass ratio is 90:10;Ni:Si mass ratio is 97:3.
Wherein, the material of a thermo wires is NiCr;The material of another thermo wires is NiSi.
Traditional thermocouple is that the thermo wires end welding of two different materials is formed a contact point for thermometric.
The utility model sputters double-layer films using magnetron sputtering method on a silicon substrate, double-layer films respectively with it is respectively identical
The thermocouple of material connects, and double-layer films junction forms hot junction, and the film thermocouple made in this way is as thermometric
Element can effectively improve temperature measurement accuracy and response speed.Secondly, by film thermocouple stratification temperature sensor Implant
Inside carries out thermometric, can greatly reduce assembly difficulty, and can be before being assembled to solid material to film thermocouple
Depth carries out infrared detection, is individually tested measuring accuracy, is installed to measured material again in the case where sensor qualification
Inside substantially increases the accuracy of test.
Detailed description of the invention
Fig. 1 is two stratification temperature sensor structure figure of film.
Fig. 2 is film thermocouple structure chart.
Fig. 3 is two stratification temperature sensor side pseudosection of film.
1- hot junction in figure, 2-NiSi film, 3-NiCr film, 4- silicon substrate, 5-NiSi thermo wires, 6-NiCr thermo wires, 7-
Thermocouple, 8- probe support, 9- high-temp glue, 10- sensor outer housing, 11- pressing plate, 12- screw, 13- thermo wires cable, 14- are electrically connected
Connect device, 15- holding screw.
Specific embodiment
As shown in Fig. 2, firstly, film thermocouple is made using magnetron sputtering method, using silicon wafer 4 as substrate, in silicon substrate 4
It is upper first to plate layer of Ni Cr (Ni:Cr mass ratio is 90:10) film 3 and NiSi with magnetron sputtering method (Ni:Si mass ratio is 97:3)
Film 2, NiCr film 3 are connect with thermo wires 6, and 6 material of thermo wires is all NiCr;NiSi film 2 is connect with thermo wires 5, and 5 material of thermo wires is same
For NiSi.NiCr film 3 and 2 junction of NiSi film form a hot junction 1, at hot junction 1 can test temperature, formed
Temperature signal is converted voltage signal output by one film K-type thermocouple.
As shown in Figure 1, Figure 3, the hole that two different depths will be made a call in support 8 of popping one's head according to measuring point depth location, by two
Film thermocouple 7 is respectively put into two holes, and is made to have at hot thermocouple node with bottom hole and well be contacted.7 rear end of thermocouple is even
Silk is wrapped with polytetrafluoroethylene (PTFE) protective case and shielded layer forms thermo wires cable 13, and such sensor can be in damp and hot ring
Carried out under border using.The holding screw 15 of sensor outer housing 10 that material is 06Cr19Ni10 is fixed on probe support 8, is made
The two forms a complete entirety.The cavity of enclosure interior is filled up with high-temp glue 9, thermo wires cable 13 is enable steadily to consolidate
It is scheduled on enclosure interior, will not influence the thermometric performance of film thermocouple 7 in vibration or impact.The screw 12 of pressing plate 11 is consolidated
It is scheduled on the top of sensor outer housing 10, keeps sensor internal completely enclosed, improves reliability.Thermo wires cable 13 is from pressing plate 11 and passes
10 opening of sensor shell is drawn, and is connect with electric connector 14, electric connector 14 is connect with converter, and converter can be by thermoelectricity
MV grades of signals of the two-way occasionally exported amplify, and export two-way V grades of signal, so that it may and realization measures two-way temperature, from
And the purpose that the temperature of different depth measures at realization thin film thermoelectric couple inside of solid material two.
The preferable specific embodiment of the above, only the utility model, but the protection scope of the utility model is not
It is confined to this, anyone skilled in the art within the technical scope disclosed by the utility model, can readily occur in
Change or replacement, should be covered within the scope of the utility model.
Claims (3)
1. a kind of two stratification temperature sensor of film thermocouple, including temperature element and sensor structure, it is characterized in that: thermometric
Element is film thermocouple (7) type temperature element, and film thermocouple (7) includes silicon substrate (4) and sputters on silicon substrate (4)
Double-layer films, double-layer films connect with the thermo wires of respective identical material respectively, and double-layer films junction forms hot junction (1),
The temperature at different depth measuring point at sensor probe inside two is measured at hot junction (1).
2. a kind of two stratification temperature sensor of film thermocouple as described in claim 1, it is characterized in that: film thermocouple (7)
Including silicon substrate (4) and the NiCr film (3) and NiSi film (2) that are sputtered on silicon substrate (4), NiCr film (3) and one
A thermo wires (6) connection, NiSi film (2) are connect with another thermo wires (5), NiCr film (3) and NiSi film (2) junction shape
At a hot junction (1).
3. a kind of two stratification temperature sensor of film thermocouple as claimed in claim 2, it is characterized in that: thermo wires (6)
Material is NiCr;The material of another thermo wires (5) is NiSi.
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CN201821930378.1U CN209166667U (en) | 2018-11-21 | 2018-11-21 | A kind of two stratification temperature sensor of film thermocouple |
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CN201821930378.1U CN209166667U (en) | 2018-11-21 | 2018-11-21 | A kind of two stratification temperature sensor of film thermocouple |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111609944A (en) * | 2020-05-22 | 2020-09-01 | 南京高华科技股份有限公司 | High-integration projectile body layering temperature sensor and measurement system |
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2018
- 2018-11-21 CN CN201821930378.1U patent/CN209166667U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111609944A (en) * | 2020-05-22 | 2020-09-01 | 南京高华科技股份有限公司 | High-integration projectile body layering temperature sensor and measurement system |
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