CN209098182U - Microfluidic actuator - Google Patents

Abstract

A micro-fluid actuator comprises a substrate, a cavity layer, a vibration layer, a lower electrode layer, a piezoelectric actuation layer, an upper electrode layer, an orifice plate layer and a flow channel layer. The substrate is etched to form an outlet hole, a first inlet hole and a second inlet hole. The cavity layer is formed on the substrate, and the flow storage cavity is formed through an etching process. The vibration layer is formed on the cavity layer. The lower electrode layer is formed on the vibration layer. The piezoelectric actuation layer is formed on the lower electrode layer. The upper electrode layer is formed on the piezoelectric actuation layer. The aperture plate layer is etched to form a flow outlet and a flow inlet. The flow channel layer is formed on the aperture plate layer, forms an outflow channel and an inflow channel through a photoetching process, and is jointed with the substrate. And providing a driving power source to the upper electrode layer and the lower electrode layer to drive and control the vibration layer to generate up-and-down displacement so as to complete fluid transmission.

Description

microfluidic actuator

【Technical field】

This case is about an actuator, especially a microfluidic actuator made of a microelectromechanical semiconductor thin film.

【Background technique】

At present, in various fields, whether it is medicine, computer technology, printing, energy and other industries, products are developing in the direction of refinement and miniaturization. Among them, the fluid actuation contained in micropumps, sprayers, inkjet heads, industrial printing devices and other products device is its key technology.

With the rapid development of science and technology, the application of fluid conveying structures has become more and more diversified, such as industrial applications, biomedical applications, medical care, electronic cooling, etc., and even the recent popular wearable devices can be seen. Traditional fluid actuators have gradually tended to miniaturize devices and maximize flow.

In the prior art, although there are microfluidic actuators manufactured by MEMS process, when the known microfluidic actuator is actuated, the displacement of the piezoelectric layer is too small, resulting in the transmitted flow rate. Inadequate, therefore, how to break through its technical bottleneck through innovative structure is an important content of development.

【Content of utility model】

The main purpose of this case is to provide a microfluidic actuator, fabricated using a microelectromechanical semiconductor process, that can transmit fluids. The microfluidic actuator in this case is made of a semiconductor thin film, and the depth of the fluid storage chamber can be designed to be very shallow, so as to increase the fluid compression ratio during actuation to make up for the shortcoming that the displacement of the piezoelectric layer is too small.

A broad implementation aspect of the present case is a microfluidic actuator, comprising a substrate, a cavity layer, a vibration layer, a lower electrode layer, a piezoelectric actuation layer, an upper electrode layer, an orifice layer, and First-class layer. The substrate has a first surface and a second surface, and an outlet groove, two inlet grooves, an outflow hole, a plurality of first inflow holes and two second inflow holes are formed through an etching process. The outlet groove communicates with the outflow hole. Each inlet groove communicates with a portion of the plurality of first inlet holes and the corresponding second inlet holes. The inlet grooves are symmetrically arranged on both sides of the outlet grooves. The plurality of first inflow holes are symmetrically arranged on both sides of the outflow holes. The second inflow holes are symmetrically arranged on both sides of the outflow holes, and at one end of the plurality of first inflow holes. The cavity layer is formed on the first surface of the substrate through a deposition process, and a reservoir chamber is formed through an etching process. The fluid storage chamber is communicated with the outflow holes, the plurality of first inflow holes and the second inflow holes. The vibration layer is formed on the cavity layer through a deposition process. The lower electrode layer is formed on the vibration layer through a deposition process and an etching process. The piezoelectric actuating layer is formed on the lower electrode layer through a deposition process and an etching process. The upper electrode layer is formed on the piezoelectric actuating layer through a deposition process and an etching process. An outflow port and two inflow ports are formed on the orifice plate layer through an etching process. The inlets are symmetrically arranged on both sides of the outlet. The flow channel layer is formed on the orifice plate layer by a dry film material rolling process, an outflow channel, a binary flow channel and a plurality of column structures are formed by a photolithography process, and the flip chip alignment process is used to form a hot pressing process. on the second surface of the substrate. The inflow channels are respectively arranged symmetrically on both sides of the outflow channel. A plurality of columnar structures are symmetrically arranged on both sides of the outflow channel. The outflow port of the orifice plate layer is communicated with the outlet groove of the base plate through an outflow channel. The inflow ports of the orifice plate layer are respectively communicated with the inlet grooves of the base plate through the inflow channels. Provide driving power with different phase charges to the upper electrode layer and the lower electrode layer to drive and control the vibration layer to generate up and down displacement, so that the fluid is sucked in from the inlet, and flows to the first inlet hole and the second inlet hole through the plurality of first inlet holes. The fluid storage chamber is finally squeezed through the outflow hole and then discharged from the outflow port to complete the fluid transfer.

【Description of drawings】

FIG. 1 is a schematic cross-sectional view of the first embodiment of the microfluidic actuator of the present invention.

2A to 2K are exploded schematic views of the manufacturing steps of the first embodiment of the present invention.

FIG. 3 is a schematic top view of the first embodiment of the present invention.

FIG. 4 is a schematic bottom view of the first embodiment of the present invention.

5A to 5C are exploded schematic views of the etching steps of the inflow holes according to the first embodiment of the present invention.

6A to 6B are schematic diagrams of the operation of the first embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view of the second embodiment of the microfluidic actuator of the present invention.

FIG. 8 is a schematic bottom view of another embodiment of the present invention.

【Detailed ways】

Some typical embodiments embodying the features and advantages of the present case will be described in detail in the description of the latter paragraph. It should be understood that this case can have various changes in different aspects, all of which do not depart from the scope of this case, and the descriptions and diagrams therein are essentially used for illustration rather than limiting this case.

The microfluidic actuator of the present case is used for transporting fluids. Please refer to FIG. 1 . In the embodiment of the present case, the microfluidic actuator 100 includes: a substrate 1a, a cavity layer 1b, a vibration layer 1c, a lower electrode layer 1d, A piezoelectric actuating layer 1e, an upper electrode layer 1f, an orifice plate layer 1h, and a flow channel layer 1i. The flow channel layer 1i, the orifice layer 1h, the substrate 1a, the cavity layer 1b, the vibration layer 1c, the lower electrode layer 1d, the piezoelectric actuation layer 1e and the upper electrode layer 1f are stacked and combined in sequence to form a whole, and the composition is as follows illustrate. In the first embodiment of the present application, the microfluidic actuator 100 includes an actuating unit 10 .

Please refer to FIG. 2A , in the first embodiment of the present application, the substrate 1 a is a silicon substrate. The substrate 1a has a first surface 11a and a second surface 12a opposite to the first surface 11a. In the first embodiment of the present application, the cavity layer 1b is formed on the first surface 11a of the substrate 1a through a deposition process of silicon dioxide material, and the deposition process may be a physical vapor deposition process (PVD), a chemical vapor deposition process ( CVD) or a combination of the two, but not limited thereto. In the first embodiment of the present application, the vibration layer 1c is formed on the cavity layer 1b by a silicon nitride material deposition process. In the first embodiment of the present application, the lower electrode layer 1d is formed on the vibration layer 1c through a metal material deposition process, and the lower electrode layer 1d is a platinum metal material or a titanium metal material, but not limited thereto. In the first embodiment of the present application, the piezoelectric actuating layer 1e is formed on the lower electrode layer 1d through a piezoelectric material deposition process. In the first embodiment of the present application, the upper electrode layer 1f is formed on the piezoelectric actuating layer 1e by a metal material deposition process, and the upper electrode layer 1f is made of a gold metal material or an aluminum metal material, but not limited to this. . It is worth noting that the structure shown in FIG. 2A is a structure that can be fabricated by the existing foundry technology, so it has the advantage of low cost.

Referring to FIG. 2B , in the first embodiment of the present application, the lower electrode layer 1 d , the piezoelectric actuating layer 1 e and the upper electrode layer 1 f are etched to define an active region M through a photolithography etching process. It should be noted that, in the first embodiment of the present application, the etching process may be a wet etching process, a dry etching process or a combination of the two, but not limited thereto.

Referring to FIG. 2C , in the first embodiment of the present invention, the second surface 12 a of the substrate 1 a is etched through a dry etching process to form an outlet trench 13 a and two inlet trenches 14 a. The outlet trench 13a and the inlet trench 14a have the same etching depth, and the etching depth is etched between the first surface 11a and the second surface 12a without contacting the cavity layer 1b. The inlet grooves 14a are symmetrically arranged on both sides of the inlet groove 13a, respectively.

Please refer to FIGS. 2D and 2E. In the first embodiment of the present invention, a mask layer 1g is formed on the second surface 12a of the substrate 1a, and the outlet trenches 13a and the inlet trenches 14a are formed by a silicon dioxide material deposition process. Inside. The mask layer 1g then undergoes a precision perforation process to form a first flow hole 11g in the outlet groove 13a, and a plurality of second flow holes 12g and a third flow hole 13g are respectively formed in the inlet groove 14a. In the first embodiment of the present application, the diameter of the first flow hole 11g is larger than that of the third flow hole 13g, and the diameter of the third flow hole 13g is larger than that of each second flow hole 12g, but not limited thereto. The perforation depths of the first flow hole 11g, the plurality of second flow holes 12g, and the third flow hole 13g are until they come into contact with the substrate 1a, so that the substrate 1a is exposed. In the first embodiment of the present application, the precision perforation process is an excimer laser processing process, but it is not limited thereto.

Please refer to FIG. 2E , FIG. 2F and FIG. 3 , in the first embodiment of the present application, the substrate 1 a is etched through a low-temperature deep etching process to etch the substrate 1 a corresponding to the first through holes 11 g , the plurality of second through holes 12 g and the third through holes The portion 13g is used to form an outflow hole 15a, a plurality of first inflow holes 16a and two second inflow holes 17a of the substrate 1a. The outflow holes 15a are formed by etching along the first flow holes 11g until they contact the cavity layer 1b, and the plurality of first inflow holes 16a are respectively etched along the plurality of second flow holes 12g until they contact the cavity layer 1b. and the second inflow holes 17a are formed by etching along the third flow holes 13g until they are in contact with the cavity layer 1b. The plurality of first inflow holes 16a are symmetrically arranged on both sides of the outflow holes 15a. The second inflow holes 17a are symmetrically disposed on both sides of the outflow holes 15a, and at one end of the plurality of first inflow holes 16a. In the first embodiment of the present application, the low-temperature deep etching process is a deep reactive ion etching process (BOSCH Process), but it is not limited thereto. Please refer to FIG. 2E and FIG. 5A , in the first embodiment of the present application, when the mask layer 1g uses an excimer laser processing process to form the first flow hole 11g, the plurality of second flow holes 12g and the third flow hole 13g, in order to avoid For the deviation of the perforation position or the perforation angle, a buffer distance e is reserved in the sidewalls of the outlet groove 13a and the inlet groove 14a. In addition, the deep reactive ion etching process (BOSCH Process) is used to etch only the silicon substrate of the substrate 1a, so the excimer laser processing process is used to leave an overetching depth t on the substrate 1a, which is beneficial for the substrate 1a to be reliable and easy. The outflow hole 15a, the plurality of first inflow holes 16a and the second inflow holes 17a are formed by etching from the overetching depth t. In the first embodiment of the present application, the minimum pore diameters of the outflow holes 15a, the plurality of first inflow holes 16a and the second inflow holes 17a are 5-50 micrometers (μm), and the pore size depends on the properties of the fluid. 2F and 5B, the outflow holes 15a, each of the first inflow holes 16a and each of the second inflow holes 17a have a perforation depth d and a perforation aperture s, and the aspect ratio of the formed holes The d/s can reach 40. In the implementation of this process, the aspect ratio d/s of the appropriate hole is considered, which can avoid the high temperature generated by the processing, which will affect the polarity distribution of the back-end piezoelectric material and cause a depolarization reaction.

Please refer to FIG. 2E and FIG. 2G , in the first embodiment of the present application, the cavity layer 1b is further etched to form a reservoir chamber 11b inside the cavity layer 1b through a wet etching process. That is, the etching solution flows into the first flow hole 11g, the plurality of second flow holes 12g and the third flow hole 13g, and flows through the outflow hole 15a, the plurality of first inflow holes 16a and the second inflow hole 17a. to the cavity layer 1b, and then etching and releasing the part of the cavity layer 1b to define a storage chamber 11b. Thereby, the storage chamber 11b is communicated with the outflow hole 15a, the plurality of first inflow holes 16a and the second inflow holes 17a. In the first embodiment of the present application, the wet etching process uses a hydrofluoric acid (HF) etchant to etch the cavity layer 1b, but it is not limited thereto. In the first embodiment of the present application, the thickness of the cavity layer 1b is 1-5 micrometers (μm), but not limited thereto. It is worth noting that, when the reservoir chamber 11b is formed by the wet etching process, the mask layer 1g is also removed together. After the formation of the storage chamber 11b and the removal of the mask layer 1g, the outlet groove 13a of the substrate 1a is communicated with the outflow hole 15a, and the inlet groove 14a is respectively connected with a plurality of first inflow holes 16a and a second inflow hole 15a. The holes 17a communicate with each other. Please refer to FIGS. 2G and 5C again. In the first embodiment of the present application, the wet etching process is usually isotropic etching. In the first embodiment of the present application, when the liquid storage chamber 11b is etched, the liquid storage chamber 11b There is a cavity depth r, which is equal to the thickness of the cavity layer 1b, and the undercut distance generated by wet etching is r', so the cavity depth r is equal to the undercut distance r', which is an isotropic etching . Furthermore, since the diameters of the outflow holes 15a, each of the first inflow holes 16a and each of the second inflow holes 17a are only between 5-50 micrometers (μm), and the cavity depth r is only between 1-5 Therefore, when etching the liquid storage chamber 11b, an over-etching is required, so as to prolong the etching time, the unetched residues can be removed. In the first embodiment of the present application, when the wet etching process is performed to form the liquid storage chamber 11b, an over-etching distance L will be generated, and the over-etching distance L is greater than the under-etching distance by r', so that the liquid storage chamber 11b can be formed. The silica material in the range is completely removed.

Referring to FIGS. 2H and 2I, in the first embodiment of the present application, an orifice layer 1h is provided, and an outlet 11h and two inlets 12h are etched in the orifice layer 1h through an etching process. The inlet ports 12h are symmetrically arranged on both sides of the outlet port 11h, respectively. In the first embodiment of the present application, the etching process of the orifice layer 1h may be a wet etching process, a dry etching process or a combination of the two, but not limited thereto. In the first embodiment of the present application, the orifice plate layer 1h is made of a stainless steel material or a glass material, but it is not limited thereto.

Please refer to FIGS. 2J, 2K and 4. In the first embodiment of the present application, the flow channel layer 1i is formed on the orifice plate layer 1h through a dry film material rolling process, and is formed on the flow channel layer through a photolithography process. One outflow channel 11i, two inflow channels 12i and a plurality of columnar structures 13i are formed on 1i, and the outflow channel 11i is formed to communicate with the outflow port 11h of the orifice plate layer 1h, and the inflow channel 12i is formed with the holes respectively. The inlet 12h of the board layer 1h is connected. The inflow passages 12i are symmetrically arranged on both sides of the outflow passage 11i, respectively. In the first embodiment of the present application, a plurality of columnar structures 13i are staggered and formed in the inflow channel 12i (as shown in FIG. 4 ) to filter impurities in the fluid. In the first embodiment of the present application, the dry film material is a photosensitive polymer dry film, but not limited thereto.

Returning to FIG. 1 , the flow channel layer 1i is finally bonded to the second surface 12a of the substrate 1a through a flip-chip alignment and a thermocompression bonding process to form the actuating unit 10 of the microfluidic actuator 100 of the present invention. Thereby, the outflow port 11h of the orifice plate layer 1h communicates with the outlet groove 13a of the substrate 1a through the outflow channel 11i of the flow channel layer 1i; The inlet channel 12i of 1i communicates with the inlet groove 14a of the substrate 1a.

Please refer to FIG. 6A and FIG. 6B , in the first embodiment of the present application, the specific operation mode of the microfluidic actuator 100 is to provide driving power with opposite phase charges to the upper electrode layer 1f and the lower electrode layer 1d to drive and control The vibration layer 1c is displaced up and down. As shown in FIG. 6A, when a positive voltage is applied to the upper electrode layer 1f and a negative voltage is applied to the lower electrode layer 1d, the piezoelectric actuating layer 1e drives the vibration layer 1c to move away from the substrate 1a, whereby the external fluid flows through the holes The inflow port 12h of the plate layer 1h is sucked into the microfluidic actuator 100, and the fluid entering the microfluidic actuator 100 then sequentially passes through the inflow channel 12i of the flow channel layer 1i and the inlet groove of the substrate 1a 14a and the plurality of first inflow holes 16a and second inflow holes 17a of the substrate 1a are finally collected into the fluid storage chamber 11b of the cavity layer 1b. As shown in FIG. 6B, the electrical properties of the upper electrode layer 1f and the lower electrode layer 1d are then converted, and a negative voltage is applied to the upper electrode layer 1f and a positive voltage to the lower electrode layer 1d, so that the vibration layer 1c is displaced toward the direction close to the substrate 1a, The volume in the storage chamber 11b is compressed by the vibration layer 1c, so that the fluid collected in the storage chamber 11b can pass through the outflow holes 15a of the substrate 1a, the outlet grooves 13a of the substrate 1a and the flow channel layer 1i in sequence. After exiting the outflow channel 11i, the fluid is discharged out of the microfluidic actuator 100 from the outflow port 11h of the orifice plate layer 1h to complete the fluid transmission.

It is worth noting that when the microfluidic actuator 100 sucks the external fluid, part of the external fluid will be sucked into the microfluidic actuator 100 through the outflow port 11h of the orifice plate layer 1h, but due to the outflow of the orifice plate layer 1h The hole diameter of the passage opening 11h is smaller than that of the inflow passage opening 12h, so that the amount of external fluid sucked from the outflow opening 11h is relatively small. When the microfluidic actuator 100 discharges fluid, the plurality of columnar structures 13i of the flow channel layer 1i will have a damping effect on the backflowing fluid. In addition, the second inflow hole 17a of the substrate 1a corresponds to the displacement of the piezoelectric actuating layer 1c The smallest edge position. Therefore, the amount of fluid discharged from the inlet port 12h is relatively small.

Furthermore, it is worth noting that the problem that the flow resistance of the plurality of first inflow holes 16a of the substrate 1a is too large can be improved by adjusting the voltage waveform or lengthening the actuation time of the microfluidic actuator 100 for sucking the external fluid .

Referring to FIG. 7 , the second embodiment of the present application is substantially the same as the first embodiment, except that the microfluidic actuator 100 ′ includes two actuating units 10 to increase the flow output.

Referring to FIG. 8, in other embodiments of the present application, the microfluidic actuator 100" includes a plurality of actuating units 10. The plurality of actuating units 10 can be arranged in series, in parallel, or in series-parallel, so as to increase the flow output. The arrangement of each of the actuating units 10 can be designed according to usage requirements, but is not limited thereto.

It should be noted that, in the first and second embodiments of this application, each actuating unit 10 has a symmetrical structure. In other embodiments of this application, the structural arrangement of each actuating unit 10 can be used according to Design according to needs, not limited to this.

This application provides a microfluidic actuator, which is mainly completed by a microelectromechanical semiconductor process, and by applying driving power sources of different phase charges to the upper electrode layer and the lower electrode layer, the vibration layer is displaced up and down, to achieve fluid transfer. In this way, the microfluidic actuator can increase the fluid compression ratio during actuation to compensate for the small displacement of the piezoelectric layer, so as to achieve the feasibility of transmitting fluids and generate great transmission efficiency in an extremely miniaturized structure. If it has industrial use value, the application shall be filed in accordance with the law.

This case can be modified by Shi Jiangsi, a person who is familiar with this technology, but all of them do not deviate from the protection of the scope of the patent application attached.

【Symbol Description】

100, 100', 100": Microfluidic Actuators

10: Actuating unit

1a: Substrate

11a: first surface

12a: Second surface

13a: Outlet groove

14a: Inlet groove

15a: Outflow holes

16a: The first inlet hole

17a: Second inlet hole

1b: Cavity layer

11b: Reservoir chamber

1c: Vibration layer

1d: lower electrode layer

1e: Piezoelectric Actuation Layer

1f: upper electrode layer

1g: mask layer

11g: first flow hole

12g: Second flow hole

13g: Third flow hole

1h: Orifice layer

11h: Outlet

12h: Inlet

1i: runner layer

11i: Outflow channel

12i: Inflow channel

13i: Columnar structure

e: buffer distance

t: overetching depth

d: perforation depth

s: perforation aperture

r: cavity depth

r': side erosion distance

L: Overetch distance

M: Action area.

Claims (18)

1. a microfluidic actuator, is characterized in that, comprises: A substrate has a first surface and a second surface. An outlet groove, two inlet grooves, an outflow hole, a plurality of first inflow holes and two second inflow holes are formed through an etching process. The outlet The grooves are communicated with the outflow holes, each of the inlet grooves is communicated with a part of the plurality of first inflow holes and the corresponding plurality of second inflow holes, and the plurality of inlet grooves are respectively symmetrical Arranged on both sides of the outlet groove, the plurality of first inflow holes are symmetrically arranged on both sides of the outflow hole, and the second inflow holes are symmetrically arranged on both sides of the outflow hole respectively, and are located on both sides of the outflow hole. one end of the plurality of first inflow holes; A cavity layer is formed on the first surface of the substrate through a deposition process, and an etching process is used to form a storage chamber, the storage chamber, the outflow hole, the plurality of first inflow holes, and the plurality of second inflow holes are connected; a vibration layer formed on the cavity layer by a deposition process; a lower electrode layer, formed on the vibration layer through a deposition process and an etching process; a piezoelectric actuating layer formed on the lower electrode layer by a deposition process and an etching process; an upper electrode layer formed on the piezoelectric actuating layer through a deposition process and an etching process; an orifice plate layer, an outflow port and two inflow ports are formed by an etching process, and the plurality of inflow ports are respectively symmetrically arranged on both sides of the outflow port; and The first channel layer is formed on the orifice layer by a dry film material rolling process, an outflow channel, a binary inflow channel and a plurality of columnar structures are formed by a photolithography process, and a flip chip alignment and thermal compression are used. The process is bonded to the second surface of the substrate, the plurality of inflow channels are symmetrically arranged on both sides of the outflow channel, the plurality of columnar structures are symmetrically arranged on both sides of the outflow channel, and the orifice plate layer is symmetrically arranged on both sides of the outflow channel. The outlet is communicated with the outlet groove of the substrate through the outlet channel, and the inlet ports of the orifice layer are connected to the inlet grooves of the substrate through the inlet channels respectively. Slots are connected; wherein, driving power sources with different phase charges are provided to the upper electrode layer and the lower electrode layer, so as to drive and control the vibration layer to generate up and down displacement, so that the fluid is sucked in from the plurality of inlets and passes through the plurality of first inlets. The flow hole and the plurality of second inflow holes flow into the storage chamber, and are finally squeezed through the outflow hole and then discharged from the outflow port to complete the fluid transmission. 2 . The microfluidic actuator of claim 1 , wherein after the fluid is sucked in from the plurality of inflow ports, it sequentially passes through the plurality of inflow channels, the plurality of inlet grooves and the plurality of The first inflow hole and the plurality of second inflow holes flow into the fluid storage chamber. 3 . The microfluidic actuator of claim 1 , wherein after being squeezed, the fluid in the fluid storage chamber passes through the outflow hole, the outlet groove and the outflow channel in sequence and then automatically This outlet discharges. 4 . The microfluidic actuator of claim 1 , wherein the plurality of columnar structures are formed in the inflow channel. 5 . 5. The microfluidic actuator of claim 1, wherein the substrate is a silicon substrate. 6 . The microfluidic actuator of claim 1 , wherein the cavity layer is made of silicon dioxide. 7 . 7 . The microfluidic actuator of claim 1 , wherein the lower electrode layer is a platinum metal material. 8 . 8 . The microfluidic actuator of claim 1 , wherein the lower electrode layer is made of a titanium metal material. 9 . 9 . The microfluidic actuator of claim 1 , wherein the upper electrode layer is made of a gold metal material. 10 . 10 . The microfluidic actuator of claim 1 , wherein the upper electrode layer is made of an aluminum metal material. 11 . 11. The microfluidic actuator of claim 1, wherein the orifice plate layer is made of stainless steel. 12. The microfluidic actuator of claim 1, wherein the orifice layer is made of a glass material. 13 . The microfluidic actuator of claim 1 , wherein the dry film material of the flow channel layer is a photosensitive polymer dry film. 14 . 14. The microfluidic actuator of claim 1, wherein a positive voltage is applied to the upper electrode layer and a negative voltage is applied to the lower electrode layer, so that the piezoelectric actuation layer drives the vibration layer away from the Orientation displacement of the substrate. 15. The microfluidic actuator of claim 1, wherein a negative voltage is applied to the upper electrode layer and a positive voltage is applied to the lower electrode layer, so that the piezoelectric actuation layer drives the vibration layer toward the Orientation displacement of the substrate. 16. The microfluidic actuator of claim 1, wherein: Apply a positive voltage to the upper electrode layer and a negative voltage to the lower electrode layer, so that the piezoelectric actuating layer drives the vibration layer to move away from the substrate, whereby external fluid is sucked in through the plurality of inlets into the microfluidic actuator, and the fluid entering the microfluidic actuator sequentially passes through the plurality of inflow channels, the plurality of inlet grooves, the plurality of first inflow holes and the plurality of inflow holes. a second inflow orifice flow, which is then collected in the storage chamber; and Convert the electrical properties of the upper electrode layer and the lower electrode layer, apply a negative voltage to the upper electrode layer and a positive voltage to the lower electrode layer, so that the vibration layer is displaced toward the direction close to the substrate, so that the internal volume of the fluid storage chamber is Being compressed by the vibration layer, the fluid collected in the fluid storage chamber can pass through the outflow hole, the outlet groove and the outflow channel in sequence and then be discharged from the outflow port to the outside of the microfluidic actuator, Complete the fluid transfer. 17. A microfluidic actuator comprising: a plurality of actuation units, each of the actuation units comprising: a substrate having a first surface and a second surface, at least one outlet groove, a plurality of inlet grooves, an outflow hole, a plurality of first inflow holes and two second inflow holes are formed through an etching process, The outlet groove is communicated with the outflow hole, each of the inlet grooves is communicated with a part of the plurality of first inflow holes and the corresponding plurality of second inflow holes, the plurality of inlet grooves Symmetrically arranged on both sides of the outlet groove, the plurality of first inflow holes are symmetrically arranged on both sides of the outflow hole, the second inflow holes are symmetrically arranged on both sides of the outflow hole, and at one end of the plurality of first inlet holes; A cavity layer is formed on the first surface of the substrate through a deposition process, and an etching process is used to form a storage chamber, the storage chamber, the outflow hole, the plurality of first inflow holes, and the plurality of second inflow holes are connected; a vibration layer formed on the cavity layer by a deposition process; a lower electrode layer, formed on the vibration layer through a deposition process and an etching process; a piezoelectric actuating layer formed on the lower electrode layer by a deposition process and an etching process; an upper electrode layer formed on the piezoelectric actuating layer through a deposition process and an etching process; an orifice plate layer, an outflow port and two inflow ports are formed by an etching process, and the plurality of inflow ports are respectively symmetrically arranged on both sides of the outflow port; and The first channel layer is formed on the orifice plate layer by a dry film material rolling process, an outflow channel, a binary inflow channel and a plurality of columnar structures are formed by a photolithography process, and a flip chip alignment and thermocompression are formed. The process is bonded to the second surface of the substrate, the plurality of inflow channels are symmetrically arranged on both sides of the outflow channel, the plurality of columnar structures are symmetrically arranged on both sides of the outflow channel, and the orifice plate layer is symmetrically arranged on both sides of the outflow channel. The outlet is communicated with the outlet groove of the substrate through the outlet channel, and the inlet ports of the orifice layer are connected to the inlet grooves of the substrate through the inlet channels respectively. Slots are connected; wherein, driving power sources with different phase charges are provided to the upper electrode layer and the lower electrode layer, so as to drive and control the vibration layer to generate up and down displacement, so that the fluid is sucked in from the plurality of inlets and passes through the plurality of first inlets. The flow hole and the plurality of second inflow holes flow into the storage chamber, and are finally squeezed through the outflow hole and then discharged from the outflow port to complete the fluid transmission; and the plurality of actuating units are connected in series, Parallel or series-parallel connection settings. 18. A microfluidic actuator comprising: a substrate having a first surface and a second surface, at least one outlet groove, at least one inlet groove, at least one outflow hole, at least one first inflow hole and at least one second inflow hole are formed by etching process a hole, the at least one outlet groove communicates with the at least one outflow hole, and the at least one inlet groove communicates with the at least one first inflow hole and the at least one second inflow hole; A cavity layer is formed on the first surface of the substrate through a deposition process, and at least one storage chamber is formed through an etching process, the at least one storage chamber and the at least one outflow hole, the at least one first an inflow hole is communicated with the at least one second inflow hole; a vibration layer formed on the cavity layer by a deposition process; At least a lower electrode layer is formed on the vibration layer through a deposition process and an etching process; at least one piezoelectric actuating layer is formed on the at least lower electrode layer by a deposition process and an etching process; at least one upper electrode layer is formed on the at least one piezoelectric actuating layer through a deposition process and an etching process; an orifice layer formed by an etching process to form at least one outflow port and at least one inflow port; and The flow channel layer is formed on the orifice plate layer through a dry film material rolling process, and at least one outflow channel, at least one inflow channel and a plurality of columnar structures are formed through a photolithography process, and through flip chip alignment and heat The lamination process is bonded to the second surface of the substrate, the at least one outflow port of the orifice layer is communicated with the at least one outlet groove of the substrate through the at least one outflow channel, and the orifice plate layer is The at least one inlet is communicated with the at least one inlet groove of the substrate through the at least one inlet channel, respectively; wherein, a driving power source with different phase charges is provided to the at least one upper electrode layer and the at least one lower electrode layer, so as to drive and control the vibration layer to generate up and down displacement, so that the fluid is sucked from the at least one inlet and passes through the at least one The first inflow hole and the at least one second inflow hole flow into the at least one storage chamber, and finally are squeezed through the at least one outflow hole and then discharged from the at least one outflow port to complete the fluid transmission.