CN209052765U - 化学气相沉积炉 - Google Patents
化学气相沉积炉 Download PDFInfo
- Publication number
- CN209052765U CN209052765U CN201821326944.8U CN201821326944U CN209052765U CN 209052765 U CN209052765 U CN 209052765U CN 201821326944 U CN201821326944 U CN 201821326944U CN 209052765 U CN209052765 U CN 209052765U
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- CN
- China
- Prior art keywords
- chemical vapor
- vapor deposition
- crucible
- deposition
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 51
- 238000000151 deposition Methods 0.000 claims abstract description 76
- 230000008021 deposition Effects 0.000 claims abstract description 76
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000000428 dust Substances 0.000 claims description 31
- 238000009413 insulation Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 15
- 239000007789 gas Substances 0.000 description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 8
- 229910052725 zinc Inorganic materials 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 3
- 229910000058 selane Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821326944.8U CN209052765U (zh) | 2018-08-16 | 2018-08-16 | 化学气相沉积炉 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821326944.8U CN209052765U (zh) | 2018-08-16 | 2018-08-16 | 化学气相沉积炉 |
Publications (1)
Publication Number | Publication Date |
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CN209052765U true CN209052765U (zh) | 2019-07-02 |
Family
ID=67047593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201821326944.8U Active CN209052765U (zh) | 2018-08-16 | 2018-08-16 | 化学气相沉积炉 |
Country Status (1)
Country | Link |
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CN (1) | CN209052765U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN119177429A (zh) * | 2024-11-26 | 2024-12-24 | 湖南顶立科技股份有限公司 | 内外双组份筒状工件的化学气相沉积炉 |
-
2018
- 2018-08-16 CN CN201821326944.8U patent/CN209052765U/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN119177429A (zh) * | 2024-11-26 | 2024-12-24 | 湖南顶立科技股份有限公司 | 内外双组份筒状工件的化学气相沉积炉 |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20200514 Address after: 239004 east of yongyang Road, west of Nanjing Road, north of Anqing road and south of Lu'an road in Langya Economic Development Zone, Langya District, Chuzhou City, Anhui Province Patentee after: Anhui Guangzhi Technology Co.,Ltd. Address before: 511517 Guangdong province Qingyuan Baijia Industrial Park 27-9B Patentee before: FIRST RARE MATERIALS Co.,Ltd. |
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EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2020990000437 Denomination of utility model: Chemical vapor deposition furnace Granted publication date: 20190702 License type: Common License Record date: 20200821 |
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EC01 | Cancellation of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2020990000437 Date of cancellation: 20220413 |
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EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2022980005544 Denomination of utility model: Chemical vapor deposition furnace Granted publication date: 20190702 License type: Common License Record date: 20220520 |
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EC01 | Cancellation of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2022980005544 Date of cancellation: 20230103 |