CN209036280U - Chemical mechanical polishing system and post-processing unit for wafers - Google Patents

Abstract

The utility model discloses a kind of chemical-mechanical polishing system and the post-processing units of wafer.The post-processing unit of wafer, it include: cleaning module, the cleaning module includes driving assembly and cleaning assembly, the driving component drive the wafer while rotation cleaning assembly around the axis oscillating perpendicular to the crystal column surface to spray fluid to the crystal column surface；Irradiation modules, for the wafer to be dried, the irradiation modules and the cleaning module are arranged side by side and are located at the downstream of the cleaning module irradiation modules.Wafer is damaged during can preventing cleaning wafer according to the post-processing unit of the wafer of the utility model embodiment, and cleaning effect is good.

Description

Chemical mechanical polishing system and post-processing unit for wafers

technical field

The utility model belongs to the technical field of semiconductor technology, in particular to a post-processing unit for wafers and a chemical mechanical polishing system for wafers having the post-processing unit.

Background technique

In the chemical mechanical polishing system in the related art, the method of cleaning the wafer will more or less wear or damage the wafer, and it is easy to cause secondary pollution to the wafer, and the cleaning effect is poor, so it needs to be improved.

Utility model content

The utility model aims to solve at least one of the technical problems existing in the prior art. Therefore, the present invention provides a wafer post-processing unit, which can prevent damage to the wafer in the process of cleaning the wafer, and has a good cleaning effect.

The utility model also provides a chemical mechanical polishing system with a post-processing unit of the wafer.

The wafer post-processing unit according to the embodiment of the first aspect of the present invention includes: a cleaning module, the cleaning module includes a driving component and a cleaning component, and the driving component drives the wafer to rotate while the cleaning component rotates around an axis perpendicular to the wafer surface swings to spray fluid onto the wafer surface; a drying module for drying the wafer, the drying module and the cleaning module are arranged side by side and located at downstream of the cleaning module.

According to the wafer post-processing unit of the embodiment of the present invention, in the cleaning module, while the wafer is rotating, the cleaning component is used to spray fluid toward the surface of the wafer, so that the contact between the cleaning component and the wafer can be avoided, which greatly reduces the The possibility of the wafer being damaged during processing, thus protecting the wafer to a large extent. In addition, the surface of the wafer can be cleaned by spraying the fluid on the surface of the wafer by the cleaning component, so that the particles on the surface of the wafer can be detached from the surface of the wafer under the action of centrifugal force and by the flushing of the liquid or the blowing of the gas, thereby The cleaning module will not wear the wafer surface, and does not need to use other components to contact the wafer, and will not pollute the wafer surface twice, and the cleaning effect is good.

According to an embodiment of the present invention, the cleaning module further comprises: a casing, the casing defines a working chamber, the cleaning assembly is arranged in the working chamber and can swing in a vertical plane, and the driving The assembly is used for driving the wafer to rotate in the vertical plane; the driving structure is used for driving the cleaning assembly to swing.

According to an embodiment of the present invention, the driving structure includes a connecting shaft, the connecting shaft extends horizontally and is rotatably provided in the working chamber around its axis, the cleaning assembly includes: a cleaning rod, the cleaning A rod is connected to the free end of the connecting shaft and extends in a plane perpendicular to the connecting shaft; a conduit is provided on the cleaning rod and can eject fluid toward the wafer.

According to an embodiment of the present invention, the conduit comprises: a first conduit for ejecting liquid toward the wafer, a megasonic nozzle is provided on the first conduit, and the first conduit is used to eject liquid toward the wafer. The part of the conduit located downstream of the megasonic shower head is a quartz conduit; a second conduit, the second conduit is used to eject gas toward the wafer, the free end of the second conduit is provided with a nozzle, the nozzle It is configured such that the gas ejected towards the wafer takes the shape of a cone or fan.

According to an embodiment of the present invention, the post-processing unit of the wafer includes a plurality of the cleaning modules, and the plurality of the cleaning modules are arranged side by side.

According to an embodiment of the present invention, the wafer post-processing unit further includes: a roller brush module, which is configured to perform roller brush cleaning on the wafer.

According to an embodiment of the present invention, the post-processing unit of the wafer further includes: a megasonic module for performing megasonic cleaning on the wafer.

According to an embodiment of the present invention, the wafer post-processing unit further includes a fixing frame, the drying module and the cleaning module are arranged side by side in the fixing frame, and the fixing frame is provided with a transmission The wafer cleaning robot.

A chemical mechanical polishing system for wafers according to an embodiment of the second aspect of the present invention includes: a front-end unit, which is used for storing and/or detecting wafers; a polishing unit, which includes a plurality of For the polishing module for polishing the wafer, a plurality of the polishing modules are arranged side by side, and at least one of the polishing modules is arranged adjacent to the front-end unit; according to the above-mentioned wafer post-processing unit, the wafer post-processing unit The unit is disposed on the same side of the front end unit opposite to the polishing unit.

According to the chemical mechanical polishing system of the wafer according to the embodiment of the present invention, by setting the above-mentioned post-processing unit of the wafer, the cleaning effect of the chemical mechanical polishing system for the entire wafer on the wafer can be improved, and the generation of the wafer on the wafer can be avoided. damage.

According to an embodiment of the present invention, the chemical mechanical polishing system for wafers further includes: a first inversion mechanism, the first inversion mechanism is provided between the polishing unit and the post-processing unit of the wafer to The wafer is sent to the post-processing unit of the wafer, and the first turning mechanism is used to turn the wafer from a horizontal direction to a vertical direction; a transfer robot is used for turning the wafer The wafer is taken out from the polishing unit and sent to the first inversion mechanism.

According to an embodiment of the present invention, the chemical mechanical polishing system for wafers further includes: a second inversion mechanism, the second inversion mechanism is provided between the post-processing unit of the wafer and the front-end unit to The wafer is sent into the front-end unit, and the second inversion mechanism is used to invert the wafer from a vertical direction to a horizontal direction.

Additional aspects and advantages of the invention will be set forth, in part, from the following description, and in part will be apparent from the following description, or learned by practice of the invention.

Description of drawings

The above and/or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of embodiments in conjunction with the accompanying drawings, wherein:

1 is a schematic structural diagram of a post-processing unit of a wafer according to an embodiment of the present invention;

2 is a schematic structural diagram of a wafer post-processing unit according to a second embodiment of the present invention;

3 is a schematic structural diagram of a wafer post-processing unit according to a third embodiment of the present invention;

4 is a schematic structural diagram of a wafer post-processing unit according to a fourth embodiment of the present invention;

5 is a schematic structural diagram of a cleaning module according to an embodiment of the present invention;

6 is a schematic structural diagram of a cleaning assembly according to an embodiment of the present invention;

7 is a schematic structural diagram of the cleaning module shown in FIG. 5 from another angle;

FIG. 8 is a schematic structural diagram of a cleaning module according to another embodiment of the present invention.

9 is a schematic structural diagram of a chemical mechanical polishing system for a wafer according to an embodiment of the present invention;

Reference number:

chemical mechanical polishing system 100;

front end unit 10;

polishing unit 20; polishing module 21; first polishing module 21a; second polishing module 21b; third polishing module 21c; fourth polishing module 21d;

a post-processing unit 30 for the wafer;

cleaning module 31; first cleaning module 31a; second cleaning module 31b; third cleaning module 31c;

cleaning assembly 311; cleaning rod 3111; installation space 3112; conduit 3113; first conduit 3114; first pipe section 3115; second pipe section 3116;

Shell 312; Vertical plate 3121; Cover plate 3122; Bottom plate 3123; Side plate 3124;

drive assembly 313; rotating disc body 3131; holder 3132;

driving structure 314; connecting shaft 314a;

the second cleaning component 315;

Drying module 32; Fixed frame 33; Cleaning robot 34;

Rolling brush module 35; Mounting shell 351; Rolling brush 352; Megasonic module 36;

The first turning mechanism 40; the transfer robot 50; the second turning mechanism 60;

Wafer 200.

Detailed ways

The following describes in detail the embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, but should not be construed as a limitation of the present invention.

The post-processing unit 30 of the wafer according to the embodiment of the first aspect of the present invention will be described below with reference to FIGS. 1 to 9 .

As shown in FIG. 1 to FIG. 4 and FIG. 9 , the post-processing unit 30 of the wafer includes a cleaning module 31 and a drying module 32 .

The cleaning module 31 includes a driving component 313 and a cleaning component 311 . The driving component 313 drives the wafer 200 to rotate while the cleaning component 311 swings around an axis perpendicular to the surface of the wafer 200 to spray fluid on the surface of the wafer 200 .

For example, when the cleaning component 311 is used to spray deionized water or chemicals on the surface of the wafer 200 to clean the surface of the wafer 200, the wafer 200 is rotated, and the particles on the surface of the wafer 200 can be removed by centrifugal force. For the brush and megasonic cleaning methods, the method of rinsing the surface of the wafer 200 with liquid causes less damage, and because other components do not need to be in contact with the wafer 200, the consumables will not become dirty after the service life, thereby causing two problems. The surface of the wafer 200 is not polluted, therefore, the cleaning module 31 in this embodiment has a better cleaning effect on the surface of the wafer 200 .

The drying module 32 is arranged side by side with the cleaning module 31, wherein the drying module 32 is used to dry the wafer 200, remove the liquid on the surface of the wafer 200, and prevent the droplets attached to the surface of the wafer 200 from being in the wafer during the natural drying process. Water stains are generated on the surface of the circle 200 , so as to ensure the cleaning effect of the wafer 200 . Optionally, the drying module 32 is located downstream of the cleaning module 31.

According to the wafer post-processing unit 30 according to the embodiment of the present invention, in the cleaning module 31, while the wafer 200 is rotating, the cleaning component 311 can be used to spray the fluid on the surface of the wafer 200 to clean the surface of the wafer 200, so that the wafer 200 can be cleaned. The particles on the surface can be detached from the surface of the wafer 200 under the action of centrifugal force and by the flushing of liquid or the blowing of gas, so that the cleaning module 31 will not wear the surface of the wafer 200, and does not need to use other components In contact with the wafer 200, the surface of the wafer 200 will not be polluted twice, and the cleaning effect is good.

1-9, the post-processing unit 30 of the wafer according to the embodiment of the present invention will be described in detail.

As shown in FIGS. 5-7 , according to an embodiment of the present invention, the cleaning module 31 is configured to enable the wafer 200 to rotate in a vertical plane, and the cleaning module 31 includes a cleaning component 311 that can swing in the vertical plane. The cleaning component 311 can spray fluid toward the wafer 200 to clean the wafer 200 , wherein the cleaning module 31 further includes: a housing 312 , a driving component 313 and a driving structure 314 .

The casing 312 defines a working cavity, the casing 312 constitutes an external protection structure of the cleaning module 31 , and the casing 312 defines other structures of the cleaning module 31 in the inner working cavity, thereby effectively protecting other structures.

In some embodiments of the present invention, as shown in FIGS. 5 and 6 , the housing 312 includes a vertical plate 3121 , a cover plate 3122 , a bottom plate 3123 and a side plate 3124 . The vertical plate 3121 extends vertically and the cover plate 3122 extends horizontally. extension, the cover plate 3122 is arranged on the top of the vertical plate 3121, the bottom plate 3123 extends horizontally, the bottom plate 3123 is arranged at the bottom of the vertical plate 3121, the top and bottom of the side plate 3124 are respectively connected with the cover plate 3122 and the bottom plate 3123, the side plate 3124 One side is connected with the vertical plate 3121. The side plate 3124 may extend in a vertical direction. The working cavity is jointly defined by the vertical plate 3121 , the cover plate 3122 , the bottom plate 3123 and the side plate 3124 . In an example of the present invention, at least two side walls of the working chamber are open, so that the wafers 200 can be easily transported inside and outside the cleaning module 31 .

Of course, the present invention is not limited to this, and the working chamber can also be a closed structure. For example, a door that can open and close the working chamber can be provided on the housing 312. When the wafer 200 needs to be transported, the door can be opened to put the wafer 200 in. Or take out the working chamber, when the wafer 200 does not need to be transported, the door can be closed, so that the working chamber has a closed structure relative to the external space.

As shown in FIG. 5 , in some embodiments of the present invention, the drive assembly 313 is used to drive the wafer 200 to rotate in a vertical plane. Optionally, the wafer 200 is held on the drive assembly 313 , and the drive assembly 313 rotates During the process, the wafer 200 is driven to rotate in the vertical plane.

Optionally, the drive assembly 313 includes a rotating disk body 3131 and a holder 3132. The rotating disk body 3131 has the same shape as the wafer 200 and can rotate in a vertical plane. For fixing the wafer 200 . Optionally, the rotating disk body 3131 can be driven to rotate by a driving component, such as a motor, and the driving component 313 can be connected to the vertical plate 3121 by the driving component, thereby facilitating the installation of the driving component 313 . The holder 3132 has a fixed position and a release position. When the wafer 200 needs to be fixed, the wafer 200 can be placed in the corresponding position, and the holder 3132 can be moved to the fixed position. When the wafer 200 needs to be transferred to other modules, The holder 3132 can be moved to the release position, thereby facilitating the removal of the wafer 200 from the drive assembly 313 . There can be a plurality of holders 3132, and the plurality of holders 3132 are spaced apart in the circumferential direction of the rotating disk body 3131, so that the wafer 200 can be more stably fixed on the driving assembly 313, and the force is uniform, and the wafer 200 will not be damaged. Circle 200 produces damage.

As shown in FIG. 5 , the driving structure 314 includes a connecting shaft 314a, the connecting shaft 314a extends horizontally and is rotatably provided in the working chamber around its axis, wherein the connecting shaft 314a can be disposed adjacent to the driving assembly 313, and the extending direction of the connecting shaft 314a Perpendicular to the plane of the wafer 200, the cleaning assembly 311 is connected to the free end of the connecting shaft 314a, wherein the connecting shaft 314a can drive the cleaning assembly 311 to rotate around the axis of the connecting shaft 314a when the connecting shaft 314a rotates around its own axis. In a specific example of the present invention, the rotation angle range of the connecting shaft 314a can be preset. Specifically, the rotation range is at least limited to the radial direction of the wafer 200 when the cleaning assembly 311 ejects the fluid. in any direction, so that when the wafer 200 is rotated, the fluid can be sprayed onto the entire surface of the wafer 200. The rotation range of the connecting shaft 314a is determined according to the actual situation.

In the example shown in FIG. 5 , the cleaning assembly 311 is provided in the working chamber, and the cleaning assembly 311 can swing in a vertical plane, that is, the cleaning assembly 311 can swing or reciprocate around a point or axis, and the movement of the cleaning assembly 311 The routes are in the same vertical plane. The cleaning component 311 can eject fluid toward the wafer 200 during the swinging process, so as to clean the wafer 200 . The driving structure 314 is used to drive the cleaning assembly 311 to swing.

In the cleaning module 31, while the wafer 200 is rotating in the vertical plane, the cleaning component 311 can be used to spray the fluid on the surface of the wafer 200 to clean the surface of the wafer 200, so that the particles on the surface of the wafer 200 can be removed under the action of centrifugal force. And the cleaning module 31 is detached from the surface of the wafer 200 through the flushing of liquid or the blowing of gas, so the cleaning module 31 will not wear the surface of the wafer 200, and does not need to use other components to contact the wafer 200, and will not be secondary The surface of the wafer 200 is polluted, and the cleaning effect is good.

In one embodiment of the present invention, as shown in FIG. 6 , the cleaning assembly 311 includes a cleaning rod 3111 and a conduit 3113, the cleaning rod 3111 is connected to the free end of the connecting shaft 314a and extends in a plane perpendicular to the connecting shaft 314a, The conduit 3113 is disposed on the cleaning rod 3111 and can eject fluid toward the wafer 200 . When the connecting shaft 314a rotates, it can drive the cleaning rod 3111 to rotate, and then can drive the conduit 3113 to rotate, so that the fluid sprayed from the conduit 3113 can be sprayed out within a certain range. Optionally, the connecting shaft 314a is disposed adjacent to the driving assembly 313 , and specifically, the connecting shaft 314a is disposed radially outside the driving assembly 313 .

As shown in FIG. 6 , in some embodiments of the present invention, the conduit 3113 includes a first conduit 3114 and a second conduit 3118 . Both the first conduit 3114 and the second conduit 3118 can eject liquid or gas toward the wafer 200 , In some specific examples of the present invention, the fluid that the first conduit 3114 may eject toward the wafer 200 may include deionized water, chemicals, and the like. The fluid that the second conduit 3118 may eject toward the wafer 200 may include nitrogen gas or an organic solvent.

As shown in FIG. 6 , optionally, the first conduit 3114 is provided with a megasonic spray head 3117 , and the free end of the second conduit 3118 is provided with a nozzle 3119 . By arranging the megasonic nozzle 3117, the fluid ejected from the first conduit 3114 can have megasonic waves, and the fluid passing through the megasonic nozzle has a certain vibration frequency, that is, the sundries on the surface of the wafer 200 can be cleaned, so that the The cleaning effect of the fluid on the wafer 200 is improved. By arranging the nozzles 3119, the shape of the fluid ejected from the second conduit 3118 can be more effectively controlled, thereby satisfying different cleaning effects and cleaning efficiencies for the wafer 200.

Specifically, optionally, the nozzle 3119 is configured so that the fluid ejected toward the wafer 200 has a cone shape or a fan shape. For example, when the second conduit 3118 sprays nitrogen gas toward the wafer 200, the nozzle 3119 makes the sprayed nitrogen gas in the shape of a cone, so that the nitrogen gas can be in a circular or elliptical shape when it contacts the wafer 200, so as to improve the flow of nitrogen gas to the wafer. 200 contact area, thereby improving drying efficiency. For another example, when the nitrogen gas ejected by the nozzle 3119 is fan-shaped, the nitrogen gas can be linear when it contacts the wafer 200, so that the contact area between the nitrogen gas and the wafer 200 can also be enlarged, but when the wafer 200 rotates, the nitrogen gas can quickly The entire surface of the wafer 200 is swept, improving efficiency.

As shown in FIG. 6 , optionally, the first conduit 3114 includes a first pipe section 3115 and a second pipe section 3116 , the second pipe section 3116 is connected to the free end of the first pipe section 3115 via the megasonic nozzle 3117 , and at least the second pipe section 3116 is connected to the free end of the first pipe section 3115 A part of the second pipe section 3116 extends out of the cleaning rod 3111, so that the structure of the first pipe 3114 can be simplified, and at least a part of the second pipe section 3116 extends out of the cleaning rod 3111, so that the fluid sprayed by the second pipe 3118 can be directly discharged from the cleaning rod 3111. to avoid contamination of the cleaning rod 3111.

In a preferred embodiment of the present invention, at least a portion of the first conduit 3114 is a quartz conduit, and specifically, a portion of the first conduit 3114 downstream of the megasonic showerhead 3117 may be a quartz conduit. The rear end of the megasonic nozzle 3117, that is, the end where the fluid flows, is a quartz pipe. The quartz pipe can make the fluid with a certain vibration frequency not attenuated, but keep a certain vibration frequency and spray to the surface of the wafer 200, thereby improving its effect on the wafer. 200 cleaning effect. In a specific embodiment of the present invention, the second pipe section 3116 may be composed of a quartz pipe.

As shown in FIG. 6 , in an optional embodiment of the present invention, in the installation space 3112 defined in the cleaning rod 3111 , the first conduit 3114 and the second conduit 3118 are both arranged in the installation space 3112 . Therefore, through the installation space 3112 defined by the cleaning rod 3111, the installation positions of the first conduit 3114 and the second conduit 3118 can be limited, and the first conduit 3114 and the second conduit 3118 can be effectively protected.

As shown in FIG. 7 , in some embodiments of the present invention, the cleaning module 31 further includes a second cleaning component 315 , and the second cleaning component 315 and the cleaning component 311 are respectively disposed on opposite sides of the wafer 200 . Cleaning assembly 315 is configured to eject fluid toward wafer 200 . Therefore, by disposing the cleaning component 311 and the second cleaning component 315 on the opposite sides of the wafer 200 respectively, the opposite sides of the wafer 200 can be cleaned at the same time, thereby not only improving the cleaning effect of the wafer 200 , and the cleaning efficiency of the wafer 200 can also be improved.

In a specific example of the present invention, the second cleaning component 315 may be configured to spray fluid toward the side of the wafer 200 adjacent to the driving component 313 . Specifically, as shown in FIG. 7 , the second cleaning component 315 may The fluid is ejected toward the wafer 200 through the vertical plate 3121 . The above-mentioned cleaning assembly 311 can spray fluid toward the side of the wafer 200 away from the driving assembly 313 .

In the embodiment of the present invention, a plurality of cleaning modules 31 may be provided in the post-processing unit 30 of the wafer, and the plurality of cleaning modules 31 are arranged side by side. In an embodiment of the present invention, the cleaning modes of the plurality of cleaning modules 31 are the same, that is, the structures of the plurality of cleaning modules 31 may be the same. In another embodiment of the present invention, the cleaning modes of the plurality of cleaning modules 31 may be different, that is, the structure of at least one cleaning module 31 that may include at least one cleaning module 31 is different from that of other cleaning modules 31 . Therefore, the control of the cleaning mode of the wafer 200 can be facilitated, and the cleaning effect of the wafer 200 can be improved.

In some embodiments of the present invention, referring to FIG. 9 , the number of cleaning modules 31 may be multiple, and the plurality of cleaning modules 31 are arranged in sequence, wherein optionally, the plurality of cleaning modules 31 are arranged in sequence on the transfer path of the wafer It is defined as a first cleaning module 31a, a second cleaning module 31b, a third cleaning module 31c, and so on.

In this way, after cleaning by one or more of the plurality of cleaning modules 31 , the wafer 200 is sent to the drying module 32 to dry the wafer 200 , to remove the liquid on the surface of the wafer 200 , and to avoid the liquid adhering to the surface of the wafer 200 . The droplets produce water stains on the surface of the wafer 200 during the natural drying process, so as to ensure the cleaning effect of the wafer 200 .

In some embodiments of the present invention, the structure of the drying module 32 is the same as that of the cleaning module 31 . That is, the drying module 32 also includes the same structure as the cleaning module 31 described above. As a result, the structure of the product can be more generalized, so that the development and manufacturing costs can be reduced.

It should be noted that when the wafer 200 needs to be cleaned, the cleaning component 311 and the second cleaning component 315 can spray liquid toward the wafer 200 . When the wafer 200 needs to be dried, the cleaning component 311 and the second cleaning component 315 can spray gas toward the wafer 200 .

Further, in some embodiments of the present invention, during operation, the first conduit 3114 is used for ejecting liquid toward the wafer 200 , and the second conduit 3118 is used for ejecting gas toward the wafer 200 . That is, when the wafer 200 needs to be cleaned, the first conduit 3114 in the cleaning component 311 works and sprays liquid toward the wafer 200 . When the wafer 200 needs to be dried, the second conduit 3115 of the cleaning component 311 can spray gas toward the wafer 200 .

Further, the fluid ejected from the drying module 32 is different from the fluid ejected from the cleaning module 31 . Specifically, the cleaning module 31 is used for cleaning the wafer 200, and the fluid ejected by the cleaning module 31 may be deionized water, an organic solvent or other chemicals. The drying module 32 is used for drying the wafer 200, so the fluid sprayed by the drying module 32 can be gas, such as nitrogen, and the gas is used to spray the rotating wafer 200, so that the wafer 200 is simultaneously affected by the gas during the rotating process. Blow dry, in this way, under the action of centrifugal force, such as airflow, the drying of the liquid on the surface of the wafer 200 is accelerated, and the drying effect is good.

As shown in FIGS. 1-4 and 8 , in some embodiments of the present invention, the wafer post-processing unit 30 may further include a roller brush module 35 . The roller brush module 35 may be used to perform the roller brush 352 cleaning on the wafer 200 . As shown in FIG. 8 , the rolling brush module 35 may include a mounting shell 351 , the wafer 200 may be rotatably disposed in the mounting shell 351 in the longitudinal direction, the rolling brush 352 may be rotatably disposed in the mounting shell 351 , and the rolling brush 352 Contact with wafer 200 . As a result, the wafer 200 can be frictionally cleaned during the rotation of the roller brush 352 .

In some embodiments of the present invention, optionally, the post-processing unit of the wafer further includes at least one megasonic module 36 for performing megasonic cleaning on the wafer 200 . The wafer 200 is cleaned by the megasonic module 36, so that the wafer 200 can be cleaned by different cleaning methods, thereby improving the cleaning effect. Optionally, megasonic module 36 is configured to immerse wafer 200 in a liquid for megasonic cleaning. Or alternatively, megasonic module 36 is configured to spray a liquid with megasonic waves toward wafer 200 . Thereby, the cleaning modes of the wafer 200 can be more diversified. It is beneficial to improve the cleaning effect of the wafer 200 .

In some embodiments of the present invention, as shown in FIGS. 1 to 4 , the post-processing unit 30 of the wafer includes at least one cleaning module 31 , and the post-processing unit 30 of the wafer may optionally be provided with a roller brush The number of modules 35 and megasonic modules 36 , the number of roller brush modules 35 and megasonic modules 36 , and the cleaning sequence of wafers through cleaning module 31 , roller brush module 35 and megasonic module 36 can be arbitrary.

Specifically, in the wafer post-processing unit 30, the cleaning module 31, the rolling brush module 35 and the megasonic module 36 can all clean the wafer, and the number of the cleaning module 31, the rolling brush module 35 and the megasonic module 36 The order of cleaning and cleaning can be arbitrary. For example, as shown in FIG. 4 , the cleaning module 31, the roller brush module 35 and the megasonic module 36 can each have one. The modules 31 are cleaned in sequence, or the wafer 200 can also be cleaned by the cleaning module 31 , the roller brush module 35 and the megasonic module 36 in sequence. The sequence may be arbitrary, and will not be repeated here.

Optionally, as shown in FIG. 2 , the post-processing unit 30 of the wafer may include a cleaning module 31 and a rolling brush module 35 , and the wafer 200 may be cleaned by the cleaning module 31 and the rolling brush module 35 in any order. . Or as shown in FIG. 3 , the post-processing unit 30 of the wafer can include a cleaning module 31 and a megasonic module 36, and the wafer 200 can be cleaned by the cleaning module 31 and the megasonic module 36 in any order.

Optionally, as shown in FIG. 9 , the post-processing unit 30 of the wafer may include a plurality (two or more) of cleaning modules 31 , and the wafer 200 may be cleaned by the above-mentioned plurality of cleaning modules 31 respectively. . Further, in addition to a plurality of cleaning modules 31, the post-processing unit 30 of the wafer may also be provided with a rolling brush module 35 and a megasonic module 36, and the number of the rolling brush module 35 and the megasonic module 36, as well as the wafer The cleaning sequence of 200 is not limited.

Optionally, as shown in FIG. 9 , the wafer post-processing unit 30 may further include a fixing frame 33 , and both the drying module 32 and the cleaning module 31 are arranged side by side in the fixing frame 33 . Therefore, the post-processing unit 30 of the wafer is self-contained with respect to the entire chemical mechanical polishing system 100 . Before the assembly of the entire chemical mechanical polishing system 100 is completed, the post-processing unit 30 of the wafer can be individually preset, thereby The assembly rate of the entire chemical mechanical polishing system 100 can be increased.

Optionally, as shown in FIG. 9 , the fixing frame 33 is provided with a cleaning robot 34 for transferring the wafer 200 . The cleaning robot 34 can be used to transfer the wafers 200 between the plurality of cleaning modules 31 and the drying modules 32 , or the cleaning robot 34 can also be used to transfer the wafers between the first turning mechanism 40 and the post-processing unit 30 of the wafer. The circle 200, or cleaning robot 34, may also be used to transfer the wafer 200 between the transfer robot 50 and the post-processing unit 30 of the wafer.

According to the wafer post-processing unit 30 according to the embodiment of the present invention, in the cleaning module 31, while the wafer 200 rotates in a vertical plane, the cleaning component 311 can be used to spray the fluid on the surface of the wafer 200 to clean the surface of the wafer 200 , so that the particles on the surface of the wafer 200 can be detached from the surface of the wafer 200 under the action of centrifugal force and by the flushing of liquid or the blowing of gas, so that the cleaning module 31 will not wear the surface of the wafer 200, and There is no need to use other components to contact the wafer 200, the surface of the wafer 200 will not be polluted twice, and the cleaning effect is good.

The chemical mechanical polishing system 100 of the wafer according to the embodiment of the second aspect of the present invention will be described below with reference to FIGS. 1 to 9 . As shown in FIG. 9 , a chemical mechanical polishing system 100 for wafers according to an embodiment of the present invention includes: a front-end unit 10 , a polishing unit 20 and a post-processing unit 30 for wafers. The wafer post-processing unit 30 here may be the wafer post-processing unit 30 according to the embodiment of the first aspect of the present invention.

The front-end unit 10 is used for storing and/or inspecting the wafers 200, and three cases are included here. One of the front-end units 10 may only be used to store the wafers 200, and the second front-end unit 10 may only be used to inspect the wafers 200. The three front-end units 10 may also have the functions of storing the wafers 200 and inspecting the wafers 200 at the same time.

The polishing unit 20 includes a plurality of polishing modules 21 for polishing the wafer 200 , the plurality of polishing modules 21 are arranged side by side, and at least one polishing module 21 is disposed adjacent to the front-end unit 10 . For the convenience of description, the order of the plurality of polishing modules 21 from being close to the front end unit 10 to being far away from the front end unit 10 is sequentially numbered as a first polishing module 21a, a second polishing module 21b, a third polishing module 21c, a fourth polishing module 21d, etc. And so on.

Referring to the specific embodiment shown in FIG. 9 , the first polishing module 21a is closest to the front end unit 10 among the plurality of polishing modules 21. Optionally, the side surface of the first polishing module 21a is connected to the back surface of the front end unit 10, The front side of the module 21a is on the same side as the right side of the front end unit 10, the first polishing module 21a, the second polishing module 21b, the third polishing module 21c, the fourth polishing module 21d are installed side by side, and the front surfaces of the four polishing modules 21 Flush, connected sideways.

It should be explained that, in the present invention, the term "front" refers to the side facing the operator when the device and element are in use, and the "back" refers to the side facing the device and the element when in use with the "front" , "side" refers to the two sides of the device and element that are connected to each other with the "front side" when in use, wherein "left side" refers to the side on the left hand side of the operator when the operator faces the device and element, "Right side" means the side on the right hand side of the operator when the operator is facing the device and components.

The post-processing unit 30 of the wafer is disposed on the same side of the front-end unit 10 opposite to the polishing unit 20 , and the post-processing unit 30 of the wafer can be connected to the front-end unit 10 . Referring to the specific embodiment shown in FIG. 9 , optionally, the side of the post-processing unit 30 of the wafer is connected to the back of the front-end unit 10 , and the front of the post-processing unit 30 of the wafer is located on the same side as the left side of the front-end unit 10 . On the other hand, the backside of the post-processing unit 30 of the wafer is opposite to the backside of the polishing unit 20 .

In the cleaning module 31 of the wafer post-processing unit 30 , while the wafer 200 is rotating in the vertical plane, the cleaning component 311 can be used to spray the fluid on the surface of the wafer 200 to clean the surface of the wafer 200 , so that the surface of the wafer 200 The particles can be detached from the surface of the wafer 200 under the action of centrifugal force and by the flushing of the liquid or the blowing of the gas, so that the cleaning module 31 will not wear the surface of the wafer 200, and does not need to use other components to When the wafer 200 is in contact, the surface of the wafer 200 will not be polluted twice, and the cleaning effect is good.

Therefore, according to the chemical mechanical polishing system 100 of the embodiment of the present invention, by setting the above-mentioned post-processing unit 30 for the wafer, the cleaning effect of the chemical mechanical polishing system 100 for the entire wafer on the wafer 200 can be improved. , to avoid damage to the wafer 200 .

The chemical mechanical polishing system 100 of a wafer according to an embodiment of the present invention will be described in detail below with reference to FIGS. 1-9 .

In the example shown in FIG. 9, the front end unit 10 may include a pod carrier and a wafer inspection platform. The wafer cassette carrying table is used to support the wafer cassette, and the wafer cassette is used to store the wafers 200. There can be multiple wafer cassette carrying tables, and the wafer cassettes on the multiple wafer cassette carrying tables can be respectively used for storing and polishing Qualified wafers 200 and wafers 200 to be polished. The wafer inspection platform can inspect the quality of the wafer 200 before and after polishing.

The pod carrier and the wafer inspection platform can be installed on the same side of the frame of the front end unit 10 , and the pod carrier and the wafer inspection platform can be arranged side by side along the length direction of the front end unit 10 .

The drying robot is used to transfer the wafer 200 between the wafer cassette carrier and the wafer inspection platform, transfer the wafer 200 between the front-end unit 10 and the polishing unit 20, and transfer the wafer 200 between the post-processing unit 30 of the wafer and the front-end unit 10. The wafer 200 is transferred between.

In the embodiment of the present invention, the polishing unit 20 may include a plurality of polishing modules 21 arranged side by side, referring to the embodiment shown in FIG. The direction away from the front end unit 10 includes a first polishing module 21a, a second polishing module 21b, a third polishing module 21c, and a fourth polishing module 21d. The first polishing module 21a is connected to the front-end unit 10, so that the wafer 200 is easily transferred between the front-end unit 10 and the first polishing module 21a, and the second polishing module 21b is provided on the side of the first polishing module 21a away from the front-end unit 10 , the third polishing module 21c is arranged on the side of the second polishing module 21b away from the front end unit 10 , and the fourth polishing module 21d is arranged at the side of the third polishing module 21c away from the front end unit 10 . And so on when there are more polishing modules 21 .

Optionally, for example, in the embodiment in which there are four polishing modules 21, the first polishing module 21a and the second polishing module 21b may perform rough polishing and fine polishing respectively, for example, the wafers 200 transferred from the front end unit 10 are first in the first polishing module. Rough polishing is performed on a polishing module 21a, and the wafer 200 roughly polished by the first polishing module 21a is then transferred to the second polishing module 21b for fine polishing, and the second polishing module 21b transfers the finely polished wafer 200 to the wafer The post-processing unit 30; similarly, the fourth polishing module 21d and the third polishing module 21c can respectively perform rough polishing and fine polishing. The wafer 200 roughly polished by the fourth polishing module 21d is then transferred to the third polishing module 21c for fine polishing, and the third polishing module 21c transfers the polished wafer 200 to the wafer post-processing unit 30 .

It should be noted that there are various combinations of the polishing modules 21, for example, one polishing module 21 for rough polishing corresponds to two polishing modules 21 for fine polishing, and one polishing module 21 for fine polishing corresponds to two polishing modules 21 The polishing module 21 for rough polishing, etc., can be allocated and combined according to the man-hours of each process in the actual application process. Therefore, the wafer 200 can be polished in parallel among the polishing modules 21, and the polishing efficiency of the wafer 200 is high.

In some embodiments of the present invention, a polishing robot may also be provided in the polishing unit 20 , and the polishing robot may be used to transfer the wafers 200 among the plurality of polishing modules 21 .

In some embodiments of the present invention, the chemical mechanical polishing system 100 further includes a first turning mechanism 40 and a transfer robot 50 . The first inversion mechanism 40 is provided between the polishing unit 20 and the post-processing unit 30 of the wafer to feed the wafer 200 into the post-processing unit 30 of the wafer, and the first inversion mechanism 40 is used to invert the wafer 200 from a horizontal direction to the vertical direction. In the polishing unit 20, the wafer 200 can be oriented in a horizontal direction for polishing, and in the post-processing unit 30 of the wafer, the wafer 200 can be oriented in a vertical direction for cleaning. Therefore, by arranging the first inversion mechanism 40, the wafer 200 can be automatically inverted from the polishing unit 20 before the post-processing unit 30 of the wafer, avoiding manual operation and having a high degree of automation.

The transfer robot 50 is used to take out the wafer 200 from the polishing unit 20 and then send it to the first inversion mechanism 40 . The transfer robot 50 is used for sequentially transferring the wafers 200 between the polishing unit 20 and the first turning mechanism 40 . Therefore, the transfer of the wafers 200 between the polishing unit 20 and the first turning mechanism 40 can be facilitated by providing the transfer robot 50 , thereby improving the conveying efficiency of the wafers 200 .

Further, in an optional embodiment of the present invention, the drying robot of the front-end unit 10 can transfer the wafer 200 to the first polishing module 21a, and the wafer 200 is in the first polishing module 21a, the second polishing module 21b, the first polishing module 21b, the After polishing is completed in one or more of the three polishing modules 21 c and the fourth polishing module 21 d , it is transferred to the first turning mechanism 40 through the transfer robot 50 .

In another embodiment of the present invention, the arrangement sequence of the transfer robot 50 and the first inversion mechanism 40 can be reversed. For example, the first inversion mechanism 40 can be used to transfer the wafer 200 between the polishing unit 20 and the transfer robot 50 . Sequential transfer, that is, after the wafer 200 is polished in the polishing unit 20, it can be sent to the first inversion mechanism 40 by a polishing robot. In the first inversion mechanism 40, the wafer 200 is inverted from a horizontal direction to a vertical direction, and the transfer The robot arm 50 takes out the wafer 200 from the first inversion mechanism 40 and sends it into the post-processing unit 30 of the wafer.

For example, in a specific example of the present invention, the transfer manipulator 50 may be arranged in the middle of the plurality of polishing modules 21. Referring to the embodiment shown in FIG. 9, the transfer manipulator 50 is disposed between the second polishing module 21b and the third polishing module 21c. After the wafer 200 is polished in one or more of the plurality of polishing modules 21, the wafer 200 is transferred to the second polishing module 21b or the third polishing module 21c, and the transfer robot 50 transfers the wafer 200 from the second polishing module 21b to the third polishing module 21c. The polishing module 21b or the third polishing module 21c is taken out and sent to the post-processing unit 30 of the wafer.

In the embodiment of the present invention, the chemical mechanical polishing system 100 may further include a second inversion mechanism 60, and the second inversion mechanism 60 is provided between the post-processing unit 30 of the wafer and the front-end unit 10 to feed the wafer 200 into In the front end unit 10, the second inversion mechanism 60 is used to invert the wafer 200 from a vertical direction to a horizontal direction. Optionally, the wafer 200 can be positioned in a horizontal direction in the front-end unit 10 , so by setting the second inversion mechanism 60 , the wafer 200 can be easily transferred into the front-end unit 10 through the inversion of the second inversion mechanism 60 . test or store. The second inversion mechanism 60 is used to change the orientation of the wafer 200 from the vertical direction to the orientation in the horizontal direction, so as to realize the automatic inversion of the wafer 200 .

Optionally, after the wafer 200 is dried in the drying module 32 , the cleaning robot 34 of the post-processing unit 30 of the wafer or the drying robot of the front-end unit 10 can take out the wafer 200 from the second inversion mechanism 60 and return it. into the front-end unit 10 for detection or storage. In the specific example of the present invention, the wafer 200 is cleaned in sequence through the first cleaning module 31a, the second cleaning module 31b, and the third cleaning module 31c, and the cleaned wafer 200 is dried in the drying module 32 to complete the cleaning process. The dried wafer 200 is turned from vertical to horizontal by the second turning mechanism 60 , and the drying robot of the front-end unit 10 takes the wafer 200 out of the second turning mechanism 60 and puts it back into the wafer cassette in the front-end unit 10 for storage.

The chemical mechanical polishing method of the wafer according to the embodiment of the third aspect of the present invention is described below.

Wherein the chemical mechanical polishing method of the wafer is applied to the chemical mechanical polishing method of the wafer performed by the chemical mechanical polishing system of the wafer according to the second aspect of the present invention, including the following steps:

S1. Take out the wafer from the front-end unit and put it into the polishing unit for polishing;

S2. The wafer is taken out from the polishing unit and sent to the post-processing unit of the wafer;

S3. The wafer is cleaned in the cleaning module and then sent to the drying module for drying;

S4. The wafer is taken out from the drying module and sent to the front-end unit.

By using the above chemical mechanical polishing system for the wafer to polish, clean and dry the wafer, the wafer processing (polishing, cleaning and drying) effect can be good without damaging the wafer.

In one embodiment of the present invention, the wafer post-processing unit further includes: a roller brush module, which is configured to perform roller brush cleaning on the wafer. In step S3, before sending the wafer into the drying module, the method further includes sending the wafer into the roller brush module for cleaning by roller brush. It should be noted that, before drying the wafers, the wafers can be cleaned by rolling brushes with a rolling brush module, or the wafers can be spray cleaned by using the cleaning modules. The number and order of the rolling brush modules and the cleaning modules can be Arbitrary. As a result, the wafer can be cleaned in various aspects, and the cleaning effect is better.

In another embodiment of the present invention, the wafer post-processing unit further includes: a megasonic module for performing megasonic cleaning on the wafer. In step S3, before sending the wafer into the drying module, the method further includes sending the wafer into the megasonic module for megasonic cleaning. It should be noted that, before the wafer is dried, the megasonic module can be used to perform megasonic cleaning on the wafer, or the wafer can be jet-cleaned by using the cleaning module. The number and order of the megasonic module and the cleaning module can be Arbitrary. As a result, the wafer can be cleaned in various aspects, and the cleaning effect is better.

In yet another embodiment of the present invention, the post-processing unit of the wafer may include a cleaning module, a rolling brush module and a megasonic module at the same time. Before drying the wafer, the megasonic module may be used to megasonic the wafer. For cleaning, the wafer can be spray cleaned by using the cleaning module, or the wafer can be cleaned by rolling brush by using the rolling brush module, wherein the number and sequence of the megasonic module, the cleaning module and the rolling brush module can be arbitrary. As a result, the wafer can be cleaned in various aspects, and the cleaning effect is better.

In the description of this specification, reference to the terms "one embodiment," "some embodiments," "exemplary embodiment," "example," "specific example," or "some examples", etc., is meant to incorporate the embodiments A particular feature, structure, material, or characteristic described by an example or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention. Variations, the scope of the present invention is defined by the claims and their equivalents.

Claims (11)

1. a kind of post-processing unit of wafer characterized by comprising

Cleaning module, the cleaning module include driving assembly and cleaning assembly, and the driving component drives the wafer rotation The cleaning assembly is around the axis oscillating perpendicular to the crystal column surface to spray fluid to the crystal column surface while turning；

Irradiation modules, the irradiation modules are for being dried the wafer, and the irradiation modules and the cleaning module are simultaneously Arrangement sets and is located at the downstream of the cleaning module.

2. the post-processing unit of wafer according to claim 1, which is characterized in that the cleaning module further include:

Shell, working chamber is limited in the shell, and the cleaning assembly is located in the working chamber and can put in vertical plane Dynamic, the driving component is used to rotate the drive wafer in vertical plane；

Driving structure, the driving structure is for driving the cleaning assembly to swing.

3. the post-processing unit of wafer according to claim 2, which is characterized in that the driving structure includes connecting shaft, It the connecting shaft horizontal extension and can be located in the working chamber to rotation around its axis, the cleaning assembly includes:

Cleaning rod, the cleaning rod are connected to the free end of the connecting shaft and prolong in the plane vertical with the connecting shaft It stretches；

Conduit, the conduit are located on the cleaning rod and can ejecting fluids towards the wafer.

4. the post-processing unit of wafer according to claim 3, which is characterized in that the conduit includes:

First conduit, first conduit are used to spray liquid towards the wafer, and first conduit is equipped with million sound spray heads, The part positioned at the million sound spray head downstream of first conduit is quartz pipe；

Second conduit, second conduit are used to spray gas towards the wafer, and the free end of second conduit is equipped with spray Mouth, the nozzle are constructed such that the gas sprayed towards the wafer in cone shape or sector.

5. the post-processing unit of wafer according to claim 1, which is characterized in that the post-processing unit of the wafer includes Multiple cleaning modules, multiple cleaning modules are arranged side by side.

6. the post-processing unit of wafer according to claim 1, which is characterized in that further include: roller brush module, the round brush Module is configured to that round brush cleaning can be carried out to the wafer.

7. the post-processing unit of wafer according to claim 1, which is characterized in that further include: for the wafer into Million sound modules of row megasonic cleaning.

8. the post-processing unit of wafer according to claim 1, which is characterized in that the post-processing unit of the wafer also wraps Fixed frame is included, the irradiation modules and the cleaning module are located in the fixed frame side by side, set on the fixed frame There is the cleaning manipulator for being used for transmission the wafer.

9. a kind of chemical-mechanical polishing system characterized by comprising

Front end unit, the front end unit is for storing and/or detecting wafer；

Unit is polished, the polishing unit includes multiple polishing modules for being polished to the wafer, multiple throwings Optical module is arranged side by side, and at least one described polishing module is arranged adjacent to the front end unit；

The post-processing unit of wafer according to claim 1 to 8, the post-processing unit of the wafer with it is described Polishing unit is oppositely arranged on the same side of the front end unit.

10. chemical-mechanical polishing system according to claim 9, which is characterized in that further include:

First turnover mechanism, first turnover mechanism be located between polishing unit and the post-processing unit of the wafer with The wafer is sent into the post-processing unit of the wafer, first turnover mechanism is for being turned over the wafer by horizontal direction Go to vertical direction；

Transfer manipulator, the transfer manipulator are used to be fed through described first after taking out the wafer by the polishing unit Turnover mechanism.

11. chemical-mechanical polishing system according to claim 9, which is characterized in that it further include the second turnover mechanism, it is described Second turnover mechanism be located between the post-processing unit of the wafer and the front end unit with by the wafer be sent into it is described before In end unit, second turnover mechanism by vertical direction for being overturn the wafer to horizontal direction.