CN209027681U - A kind of non-refrigerate infrared focal plane array seeker - Google Patents
A kind of non-refrigerate infrared focal plane array seeker Download PDFInfo
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- CN209027681U CN209027681U CN201821840651.1U CN201821840651U CN209027681U CN 209027681 U CN209027681 U CN 209027681U CN 201821840651 U CN201821840651 U CN 201821840651U CN 209027681 U CN209027681 U CN 209027681U
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Abstract
The utility model provides a kind of non-refrigerate infrared focal plane array seeker, is related to infrared detector technical field.Comprising: the bridge arm layer of silicon substrate, bridge floor layer, four anchor posts support；Bridge floor layer is provided with thermally sensitive layer and infrared emanation absorbed layer, and bridge arm layer is provided with passivation layer and metal conducting layer, and silicon substrate is provided with reading circuit and metallic reflector；Bridge floor layer is arranged in parallel with bridge arm layer and is connect by support column, and bridge arm layer is vacantly arranged on a silicon substrate and is connect by four anchor posts with silicon substrate；There is the first vacuum space gap layer between bridge floor layer and bridge arm layer；There is the second vacuum space gap layer between bridge arm layer and silicon substrate.A kind of non-refrigerate infrared focal plane array seeker provided by the utility model, detector bridge arm thermal insulation properties can be increased, improve the effective area of infrared absorption layer, the planarization for guaranteeing multilayered structure is supported by four anchor posts, stability, to realize lower, uniform detectivity.
Description
Technical field
The utility model relates to infrared detector technical fields, visit more particularly to a kind of un-cooled infrared focal plane array
Survey device.
Background technique
Any object all can outwardly emit infra-red electromagnetic heat radiation, the light wave range of this radiation more than absolute zero
It is approximately 0.8~1000 μm, it can not be visible directly for human eye.The infrared radiation detector of infrared waves can be detected, by spy
It surveys principle and is divided into photon type and thermosensitive resistance type detector.Photon type needs work in the environment that liquid nitrogen (about 77K) freezes, and
Thermosensitive resistance type detector is usually operated at room temperature, multiple this kind of detector cells pixel in the form of two-dimensional array (such as
384 × 288,640 × 480) arrangement on a chip substrate, then constitutes room temperature infrared focal plane array seeker (IRFPA).
For room temperature formula infrared detector, work typical wave band are as follows: 8~14 μm.(300K) at normal temperature, black body radiation
Emission spectra central wavelength is just near 10 mu m wavebands；And other objects similar in temperature are emitted in human body and environment
Infrared emanation, 38% energy concentrate in 8~14 μ m of wavelength, the wave band be more suitable for sunburst, pitch-dark night or
Detection under bad weather needs.
For room temperature formula infrared focal plane array seeker, detector reflects the detection mechanism of extraneous target temperature information
Be: target issues the infrared waves heat radiation containing own temperature information, is absorbed by the bridge floor infrared absorption layer of detector, by
In bridge arm thermal insulation act on, thermally sensitive layer, which is heated, causes temperature to rise, so cause thermally sensitive layer resistance value (or electricity
Resistance rate) it changes, this variation is read by circuits on substrates.
Traditional room temperature formula infrared detector pixel is single layer structure, i.e. bridge floor layer, bridge arm layer is placed in a plane,
So that: 1, infrared absorption layer filling ratio not high, generally 65% hereinafter, more infrared energies cannot be absorbed；2, it plays
The bridge arm limited length of thermal insulation effect limits the heat insulation capacity of detector, and the radiation energy of infrared absorption is more to be scattered and disappeared.With
Write detector pixel size from 25 μm of 25 μ m, 17 μm of 17 μ m change to 10 μm of 12 μm of 12 μ m or even 10 μ ms or
Smaller, infrared absorption capacity, the thermal insulation effect of bridge arm are just more and more significant, crucial.
Utility model content
One purpose of the utility model is to provide for a kind of non-refrigerate infrared focal plane array seeker, to increase detection
Device bridge arm thermal insulation properties, improve the effective area of infrared absorption layer.
Another purpose of the utility model is to provide for a kind of non-refrigerate infrared focal plane array seeker, passes through four anchors
Column support guarantees the planarization of multilayered structure, stability, to realize lower, uniform detectivity.
Particularly, the utility model provides a kind of non-refrigerate infrared focal plane array seeker, comprising: silicon substrate, bridge
The bridge arm layer that surface layer, four anchor posts support；The bridge floor layer is provided with thermally sensitive layer and infrared emanation absorbed layer, the bridge arm layer
It is provided with passivation layer and metal conducting layer, the silicon substrate is provided with reading circuit and metallic reflector；The bridge floor layer and institute
It is arranged in parallel and connect by support column to state bridge arm layer, the bridge arm layer is vacantly arranged on the silicon substrate and by four
A anchor post is connect with the silicon substrate；There is the first vacuum space gap layer between the bridge floor layer and the bridge arm layer；The bridge arm
There is the second vacuum space gap layer between layer and the silicon substrate.
Optionally, the first vacuum gap layer height is 0.5~2.5 μm.
Optionally, the second vacuum gap layer height is 0.5~2.5 μm.
Optionally, the bridge arm layer is that the bridge arm of several " several " font inflection structures forms.
Optionally, the material of the thermally sensitive layer of the bridge floor layer is in vanadium oxide, titanium oxide, amorphous germanium silicon or amorphous silicon
It is a kind of.
Optionally, the material of the infrared emanation absorbed layer is one of silica, silicon nitride or silicon oxynitride.
Optionally, the infrared emanation wave band of the infrared emanation absorbed layer is 8~14 μm.
Optionally, the passivation layer is one of silica, silicon nitride or silicon oxynitride.
Optionally, the metal conducting layer is one of titanium, titanium/titanium nitride, nichrome or titanium aluminum vanadium alloy.
Optionally, the material of the metallic reflector is gold, aluminium, titanium/one of aluminium or nichrome.
A kind of non-refrigerate infrared focal plane array seeker provided by the utility model, entire detector cells are hanging
On silicon substrate, and bridge floor layer and bridge arm layer are distributed in upper and lower two, in the plane that is parallel to each other.Bridge floor layer and bridge arm
It is 0.5~2.5 μm of vacuum space gap layer that height is constituted between layer, bridge arm layer and substrate, vacuum gap height in total is 1.0~
5.0 μm, exemplary height is 2.5 μm, the ability that there is the selection of λ/4 to absorb infrared wavelength λ=8~14 μm long-wave band.
The room temperature infrared detector of four anchor posts support of the invention, by the way that the bridge floor layer of detector and bridge arm layer are placed in
The multilayered structure constituted in Different Plane, the beneficial outcomes of formation: can effectively improve the effective absorbing area of bridge floor layer, tool
There is very high space utilization rate, more infrared energies directly reach detector cells；Bridge arm length can greatly increase,
The heat insulation capacity that detector can be effectively improved reduces its thermal loss, improves whole detection performance；The support of four anchor posts
Bridge arm structure guarantees the planarization of multilayered structure detector cells, stability, to realize the uniform thermal imaging effect of background
Fruit.
According to the accompanying drawings to the detailed description of the utility model specific embodiment, those skilled in the art will be more
Add the above-mentioned and other purposes, advantages and features of clear the utility model.
Detailed description of the invention
Some specific realities of the utility model are described in detail by way of example and not limitation with reference to the accompanying drawings hereinafter
Apply example.Identical appended drawing reference denotes same or similar part or part in attached drawing.It should be appreciated by those skilled in the art that
The drawings are not necessarily drawn to scale.In attached drawing:
Fig. 1 is a kind of schematic diagram of non-refrigerate infrared focal plane array seeker of the utility model；
Fig. 2 is the schematic structure according to the non-refrigerate infrared focal plane array seeker of the utility model one embodiment
Figure；
Fig. 3 is the schematic top plan view removed after bridge floor layer according to Fig.2,；
Fig. 4 is the schematic knot according to the non-refrigerate infrared focal plane array seeker of the utility model another embodiment
Composition.
Specific embodiment
Fig. 1 is a kind of schematic diagram of non-refrigerate infrared focal plane array seeker of the utility model.Fig. 2 is root
According to the schematic diagram of the non-refrigerate infrared focal plane array seeker of the utility model one embodiment.Fig. 3 is according to fig. 2
Shown in removing bridge floor layer after schematic top plan view.Fig. 4 is the uncooled ir coke according to another embodiment of the utility model
The schematic diagram of planar array detector.As Figure 1-Figure 4, a kind of non-refrigerate infrared focal plane array seeker, one
As may include: silicon substrate 6, bridge floor layer 1, four anchor posts support bridge arm layer 3.Bridge floor layer 1 is provided with thermally sensitive layer 102 and red
Outer thermal radiation absorption layer (101,103).Bridge arm layer 3 is provided with passivation layer and metal conducting layer.Silicon substrate 6 is provided with reading circuit
And metallic reflector.Bridge floor layer 1 is arranged in parallel with bridge arm layer 3 and is connect by support column 2.Vacantly setting exists bridge arm layer 3
It is connect on silicon substrate 6 and by four anchor posts 4 with silicon substrate 6.There is the first vacuum space gap layer between bridge floor layer 1 and bridge arm layer 3
d1.There is the second vacuum space gap layer d2 between bridge arm layer 3 and silicon substrate 6.Optionally, the height of the first vacuum space gap layer d1 is
0.5~2.5 μm.The height of second vacuum space gap layer d2 is 0.5~2.5 μm.Bridge arm layer 3 is several " several " font inflection structures
Bridge arm composition.
As shown in Figure 1, bridge floor layer 1 is provided with thermally sensitive layer 102 and infrared emanation absorbed layer (101,103)；It is thermo-responsive
The material of layer 102 is vanadium oxide (VOx) or titanium oxide (TiOx) or amorphous germanium silicon (a-SiGe) or amorphous silicon (a-Si:H).It is red
Outer thermal radiation absorption layer (101,103) is silica (SiOx), silicon nitride (SiNx) or silicon oxynitride (SiON).It is specific at one
Embodiment in, thermally sensitive layer 102 be vanadium oxide (VOx), infrared emanation absorbed layer (101,103) is silicon nitride (SiNx)。
Bridge arm layer 3 is provided with passivation layer and metal conducting layer.The passivation layer of bridge arm is silica (SiOx), silicon nitride
(SiNx) or silicon oxynitride (SiON)；The metal conducting layer of bridge arm layer is titanium (Ti), titanium/titanium nitride (Ti/TiN), nickel chromium triangle
(NiCr) alloy or titanium aluminium vanadium (Ti/Al/V) alloy.In a specific embodiment, the passivation layer of bridge arm is silicon nitride
(SiNx), metal conducting layer is titanium (Ti).
Vacuum space gap layer d1 is constituted between bridge floor layer 1 and bridge arm layer 3, is highly 0.5~2.5 μ m.Bridge arm layer 3 and silicon
Vacuum space gap layer d2 is constituted between substrate 6, is highly 0.5~2.5 μ m.In a specific embodiment, 1 He of bridge floor layer
Vacuum gap layer height is 1.25 μm between bridge arm layer 3, bridge arm layer 3 and silicon substrate 6.Total vacuum gap exemplary height is
2.5 μm, the ability that there is the relatively strong selection in λ/4 to absorb infrared wavelength λ=8~14 μm long-wave band.
Silicon substrate 6 is provided with reading circuit, metallic reflector.The material of infrared radiation reflecting coating is on 6 surface of silicon substrate
Golden (Au), aluminium (Al), titanium/aluminium (Ti/Al) or nickel chromium triangle (NiCr) alloy.In a specific embodiment, reflector material is
Aluminium (Al).
Fig. 2 is the schematic structure according to the non-refrigerate infrared focal plane array seeker of the utility model one embodiment
Figure (after removing substrate).As shown in Fig. 2, the plane that the bridge arm layer 3 of bridge floor layer 1 and broken line type is located at upper and lower two, is parallel to each other.
Upper layer bridge surface layer 1 and lower layer's bridge arm layer 3 are connected by support column 2, constitute the multilayered structure of probe unit.Bridge arm layer 3 is hanging
It is connect on silicon substrate 6, and through four anchor posts 4 with silicon substrate 6.Four anchor posts are respectively on relative position.It needs to state
, the utility model is not limited to the inflection shape bridge arm in the present embodiment, corresponding to be also not necessarily limited to anchor in the implementation case
The relative position of column.
Fig. 3 is the schematic top plan view removed after bridge floor layer according to Fig.2,.As shown in figure 3, the bridge arm layer 3 of broken line type
One end is connected on four anchor posts 4, and other end is connected on support column 2.
Fig. 4 is the schematic knot according to the non-refrigerate infrared focal plane array seeker of the utility model another embodiment
Composition.As shown in figure 4, bridge arm extension 104 is increased in bridge floor layer 1 to further enhance the effect of the thermal insulation of bridge arm, thus
Extend the length of bridge arm.It is placed on lower planes by bridge floor layer, bridge arm layer, and increases the length of bridge arm, so that increasing
Detector bridge arm thermal insulation, the effective area for improving infrared absorption layer.
In Fig. 2, embodiment shown in Fig. 4,
Absorption layer material on bridge floor layer 1 is silicon nitride, is a kind of ideal infrared absorbing material.Infrared hot spoke
Penetrate absorbed layer 101 with a thickness of 1500, another infrared emanation absorbed layer 103 with a thickness of 2000, according to the property of detector
It is variable for capable of requiring these thickness；The general thickness of two layers of infrared emanation absorbed layer reaches 3500, and detector is in 8~14 μ
The absorptivity of the infrared long-wave band of m is up to 80% or more.The absorption layer material silicon nitride of the implementation case is usually by plasma enhancingization
Learn vapor deposition (PECVD) technique preparation.
102 material of thermally sensitive layer on bridge floor layer 1 is vanadium oxide (VOx), with a thickness of 700, thickness is not limited to 700
, it is feasible in 50~2000 ranges；Its TCR generally -2%~-3%/DEG C between, representative value is -2.3%/DEG C.Heat
The resistance value of sensitive layer 102 is feasible within the scope of 50~500KOhm according to the performance requirement of detector for 250KOhm
's.The vanadium oxide (VOx) usually reaction physical vapour deposition (PVD) (Reactive PVD) technique preparation.
It with a thickness of 2000 is variable according to the performance requirement thickness of detector that passivation layer on bridge arm layer 3, which is silicon nitride,
's.According to the literature, pyroconductivity is about 1.85K/WM, is a kind of ideal material.The implementation case it is blunt
Change layer usually to be prepared by plasma reinforced chemical vapour deposition (PECVD) technique.
Metal conducting layer titanium (Ti) on bridge arm layer 3, with a thickness of 400, thickness is not limited to 400,100~1000
It is feasible in thickness range；The usual of the implementation case is prepared by sputtering (Sputter) technique.
The material of infrared radiation reflecting coating 5 is aluminium (Al) on substrate surface, with a thickness of 1500.Reflecting layer of the present invention is unlimited
In aluminium, most of metal is all good infrared reflector；The thickness of aluminium is also not necessarily limited to 1500, in 800~5000 ranges
It is feasible.
A kind of non-refrigerate infrared focal plane array seeker provided by the utility model, entire detector cells are hanging
On silicon substrate, and bridge floor layer and bridge arm layer are distributed in upper and lower two, in the plane that is parallel to each other.Bridge floor layer and bridge arm
It is 0.5~2.5 μm of vacuum space gap layer that height is constituted between layer, bridge arm layer and substrate, vacuum gap height in total is 1.0~
5.0 μm, exemplary height is 2.5 μm, the ability that there is the selection of λ/4 to absorb infrared wavelength λ=8~14 μm long-wave band.
The room temperature infrared detector of four anchor posts support of the invention, by the way that the bridge floor layer of detector and bridge arm layer are placed in
The multilayered structure constituted in Different Plane, the beneficial outcomes of formation: can effectively improve the effective absorbing area of bridge floor layer, tool
There is very high space utilization rate, more infrared energies directly reach detector cells；Bridge arm length can greatly increase,
The heat insulation capacity that detector can be effectively improved reduces its thermal loss, improves whole detection performance；The support of four anchor posts
Bridge arm structure guarantees the planarization of multilayered structure detector cells, stability, to realize the uniform thermal imaging effect of background
Fruit.
A kind of non-refrigerate infrared focal plane array seeker provided by the utility model, bridge floor layer and bridge arm layer are placed in
The combination of the multilayered structure and four anchor posts that constitute in Different Plane and more bridge arm support constructions designs, and makes it have stronger
Fastness and unfailing performance, impact resistance are stronger.
So far, although those skilled in the art will appreciate that the more of the utility model have been shown and described in detail herein
A exemplary embodiment still, still can be according to the utility model public affairs in the case where not departing from the spirit and scope of the utility model
The content opened directly determines or derives many other variations or modifications for meeting the utility model principle.Therefore, this is practical new
The range of type is understood that and regards as to cover all such other variations or modifications.
Claims (10)
1. a kind of non-refrigerate infrared focal plane array seeker characterized by comprising silicon substrate, bridge floor layer, the support of four anchor posts
Bridge arm layer；The bridge floor layer is provided with thermally sensitive layer and infrared emanation absorbed layer, the bridge arm layer be provided with passivation layer and
Metal conducting layer, the silicon substrate are provided with reading circuit and metallic reflector；The bridge floor layer and the bridge arm layer are mutually flat
Row setting is simultaneously connected by support column, and the bridge arm layer is vacantly arranged on the silicon substrate and by four anchor posts and the silicon
Substrate connection；There is the first vacuum space gap layer between the bridge floor layer and the bridge arm layer；The bridge arm layer and the silicon substrate
Between have the second vacuum space gap layer.
2. non-refrigerate infrared focal plane array seeker according to claim 1, which is characterized in that first vacuum space
Gap layer height is 0.5~2.5 μm.
3. non-refrigerate infrared focal plane array seeker according to claim 1, which is characterized in that second vacuum space
Gap layer height is 0.5~2.5 μm.
4. non-refrigerate infrared focal plane array seeker according to claim 1, which is characterized in that if the bridge arm layer is
The bridge arm composition of dry " several " font inflection structure.
5. non-refrigerate infrared focal plane array seeker according to claim 1, which is characterized in that the heat of the bridge floor layer
The material of sensitive layer is one of vanadium oxide, titanium oxide, amorphous germanium silicon or amorphous silicon.
6. non-refrigerate infrared focal plane array seeker according to claim 1, which is characterized in that the infrared emanation
The material of absorbed layer is one of silica, silicon nitride or silicon oxynitride.
7. non-refrigerate infrared focal plane array seeker according to claim 1 or 6, which is characterized in that the infrared heat
The infrared emanation wave band of radiation absorption layer is 8~14 μm.
8. non-refrigerate infrared focal plane array seeker according to claim 1, which is characterized in that the passivation layer is oxygen
One of SiClx, silicon nitride or silicon oxynitride.
9. non-refrigerate infrared focal plane array seeker according to claim 1, which is characterized in that the metal conducting layer
For one of titanium, titanium/titanium nitride, nichrome or titanium aluminum vanadium alloy.
10. non-refrigerate infrared focal plane array seeker according to claim 1, which is characterized in that the metallic reflection
The material of layer is gold, aluminium, titanium/one of aluminium or nichrome.
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Cited By (5)
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| CN110361096A (en) * | 2019-06-26 | 2019-10-22 | 上海集成电路研发中心有限公司 | A kind of infrared detector structure of high fill factor |
| CN110571232A (en) * | 2019-08-23 | 2019-12-13 | 电子科技大学 | An infrared and visible light dual-band sensor pixel and array |
| CN113252173A (en) * | 2021-03-30 | 2021-08-13 | 武汉鲲鹏微纳光电有限公司 | Dual-mode detector pixel, uncooled infrared detector and using method of uncooled infrared detector |
| CN113390513A (en) * | 2021-06-11 | 2021-09-14 | 哈尔滨工业大学 | A three-layer pixel structure of a microbolometer |
| WO2023141768A1 (en) * | 2022-01-25 | 2023-08-03 | 烟台睿创微纳技术股份有限公司 | Microbolometer and preparation method therefor |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110361096A (en) * | 2019-06-26 | 2019-10-22 | 上海集成电路研发中心有限公司 | A kind of infrared detector structure of high fill factor |
| CN110571232A (en) * | 2019-08-23 | 2019-12-13 | 电子科技大学 | An infrared and visible light dual-band sensor pixel and array |
| CN113252173A (en) * | 2021-03-30 | 2021-08-13 | 武汉鲲鹏微纳光电有限公司 | Dual-mode detector pixel, uncooled infrared detector and using method of uncooled infrared detector |
| CN113252173B (en) * | 2021-03-30 | 2022-10-04 | 武汉鲲鹏微纳光电有限公司 | Dual-mode detector pixel, uncooled infrared detector and using method of uncooled infrared detector |
| CN113390513A (en) * | 2021-06-11 | 2021-09-14 | 哈尔滨工业大学 | A three-layer pixel structure of a microbolometer |
| CN113390513B (en) * | 2021-06-11 | 2022-10-25 | 哈尔滨工业大学 | A three-layer pixel structure of a microbolometer |
| WO2023141768A1 (en) * | 2022-01-25 | 2023-08-03 | 烟台睿创微纳技术股份有限公司 | Microbolometer and preparation method therefor |
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