CN208848857U - A kind of single-wafer wet type processing device - Google Patents
A kind of single-wafer wet type processing device Download PDFInfo
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- CN208848857U CN208848857U CN201821743880.1U CN201821743880U CN208848857U CN 208848857 U CN208848857 U CN 208848857U CN 201821743880 U CN201821743880 U CN 201821743880U CN 208848857 U CN208848857 U CN 208848857U
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model provides a kind of single-wafer wet type processing device and processing method, equipment includes support component, support component includes that the periphery for the fringe region for being used to support the support portion of wafer and support portion being arranged in is used to fix the maintaining part of wafer, support portion has fringe region and intermediate recess region, multiple gas passages of multiple gas thimbles can be formed in the top of support portion by being provided on support portion, and multiple gas thimbles can will be placed on above the support portion and be held up by the wafer that the maintaining part is fixed.And wafer lower surface is completely in atmosphere in this way in support component high speed rotation, can be recessed to avoid the intermediate region of wafer, to avoid the annulus defect of wafer.The formation of gas thimble can also avoid steam from condensing in crystal column surface, and then avoid generating the central circular defect of crystal column surface.
Description
Technical field
The utility model relates to semiconductor integrated circuit manufacturing technology fields, and in particular to a kind of single-wafer wet processed
Equipment.
Background technique
General microelectronic element is front or the device surface for being manufactured in semiconductor crystal wafer.In the technique of semiconductor crystal wafer,
It needs to carry out the front of semiconductor crystal wafer multiple tracks recipe step, such as sprinkling treatment fluid in the surface of wafer (such as is changed
Product or deionized water etc.), with wet processeds programs such as the etching, the cleanings that carry out wafer.Wafer wet is handled in the prior art
Generally use batch processes, handle processing procedure in each parameter precision it is poor, thus cause the quality stability of wafer compared with
Difference.
Have in the prior art and a kind of the wet processeds journey such as is etched, cleans to wafer using spin etch cleaning machine
Sequence.Spin etch cleaning machine generally comprises etch chamber, and the microscope carrier to carry and fix wafer is equipped in etch chamber, is carried
Shaft below platform can carry out high low speed rotation according to the setting demand of various technological parameters, and then drive wafer rotation, etching solution
It is then flowed down by the fluid supply unit above wafer, is etched with the front to wafer.
Also there are below microscope carrier many mechanisms, such as the fluid tip of motor, cleaning wafer bottom in etch chamber.And
Generally when carrying out crystal round etching, common etching solution is mostly acidic liquid, such as nitric acid (HNO3) and hydrofluoric acid (HF) etc.,
When carrying out above-mentioned etching, if it is under the conditions of the technological parameter of the wafer slow-speed of revolution, then the chemistry of wafer frontside
Liquid film or corrosive gas, it is possible to because rotary centrifugal force reduces, can be flowed on the bottom surface and microscope carrier of wafer by crystal round fringes, into
And corrosion phenomenon is generated, and form corrosion contaminant, such as metal particle, residue or film etc. in wafer bottom surface.If
Above-mentioned substance does not remove, it will destroys or pollute the element of wafer frontside.For example, certain metal materials for technique,
Such as copper, possible eleutheromorph circular bottom surface, which is returned, is stained with to wafer frontside, will so cause microelectronic element to generate defect, and reduce manufacture
On yield.
Utility model content
In view of this, the utility model embodiment provides a kind of single-wafer wet type processing device, to avoid showing
Have present in technology because wafer recess caused by crystal column surface annulus defect, and because crystal column surface condense vapor caused by
Central circular defect.
An embodiment according to the present utility model, the utility model provide a kind of single-wafer wet type processing device, packet
Include support component, the support component includes the support portion for being used to support wafer and the maintaining part for fixing wafer, described
The upper surface of support portion has fringe region and intermediate region, and the outer of the fringe region of the support portion is arranged in the maintaining part
It encloses, is provided in the support portion and at least forms multiple gas passages of multiple gas thimbles in the top of the support portion, it is more
A air thimble with equidistant ring configuration mode between the fringe region and the intermediate region, will place
It is held up above the support portion by the wafer that the maintaining part is fixed.
According to the further embodiment of the present embodiment, multiple gas passages include multiple the support portion being arranged in
The edge gas passageway of fringe region and multiple intermediate gas flow paths that the intermediate region is set；
Wherein, the upper surface to gas direction and the support portion of the edge gas passageway at an angle, and edge
The support portion is radially outward；
The intermediate gas flow path to gas direction relative to the edge gas passageway to gas direction more perpendicular to
The upper surface of the support portion, to constitute multiple gas thimbles.
According to the further embodiment of the present embodiment, the upper surface to gas direction and the support portion of edge gas passageway
Between angle less than 60 °.
According to the further embodiment of the present embodiment, the edge gas passageway is evenly spaced apart to be distributed in the support portion
The fringe region the first excircle on, the intermediate gas flow path is evenly spaced apart to be distributed in the described of the support portion
On second excircle of intermediate region, and the edge gas passageway and the intermediate gas flow path table on the support portion
The aperture in face is distributed in concentric circles.
According to the further embodiment of the present embodiment, the central point of the support portion and the two adjacent intermediate gas flow paths
Aperture line between be in 10~20 ° of angles.
According to the further embodiment of the present embodiment,
The support portion further includes the gas chamber being arranged in inside the support portion, the edge gas passageway and described
Intermediate gas flow path is all connected with the gas chamber, and the gas provided by gas source is through the gas chamber in the intermediate gas
The top in body channel forms multiple gas thimbles.
According to the further embodiment of the present embodiment,
The support component further includes pedestal, driving mechanism and mandrel, and the support component is fixed on the base,
And it is driven and is rotated by the driving mechanism by the mandrel.
Following beneficial technical effect can at least be obtained by being handled using the above method single-wafer:
1, by the way that multiple gas passages are arranged in the support portion of wafer support component, so that the side of gas while support portion
It is sprayed in edge region and intermediate region, is formed in the gap between the upper surface and backside of wafer of support portion and wafer is completely covered
Gas thimble.The gas thimble plays the role of lifting to wafer, and in this way in wet processed mode, wafer support component high speed is revolved
When turning, it can be recessed to avoid the intermediate region of wafer, and then avoid the EDGE CONTACT of the intermediate region of wafer and support portion, thus
Avoid the annulus defect of wafer.
2, since the gas sprayed from multiple gas passages has certain flow velocity, when handling wafer, the gas
Body effectively can dispel or blow out the steam in wafer and support portion gap, between backside of wafer and the lower surface of support member
Gap forms gas thimble and especially condenses on the surface of intermediate region to avoid steam in crystal column surface, and then avoids generating
The central circular defect of crystal column surface.
3, it can be improved and carried out to wafer under temperature same case in view of beneficial effect described in the above-mentioned 1st, 2 article
The revolving speed of support component when processing, so as to improve the wafer E/A uniformity；Or the situation identical in the revolving speed of support component
Under, the controllable temperature when handling wafer can be improved.
4, the technical solution of the utility model does not increase the structure complexity of support component, not will increase design and production
Cost, is simple and efficient and manufacturing cost is low.
In short, can be reduced under the premise of not increasing design and production cost using the technical solution of the utility model
Wafer defect improves product yield.
Detailed description of the invention
Can be more clearly understood the feature and advantage of the utility model by reference to attached drawing, attached drawing be schematically without
It is interpreted as carrying out any restrictions to the utility model, in the accompanying drawings:
Fig. 1 is the stereoscopic schematic diagram of single-wafer wet type processing device in the utility model embodiment one.
Fig. 2 is the diagrammatic cross-section of single-wafer wet type processing device in the utility model embodiment one.
Fig. 3 is the section of single-wafer wet type processing device in wafer wet treatment process in the utility model embodiment one
Schematic diagram.
Fig. 4-1~4-4 is that wafer defect caused by the single-wafer wet type processing device of the utility model embodiment one shows
It is intended to, wherein Fig. 4-1,4-2 are annulus defect schematic diagram caused by being recessed due to wafer, and Fig. 4-3,4-4 are since steam is in crystalline substance
Central circular defect caused by circular surfaces condense.
Fig. 5-1~5-3 is that the gas passage of the single-wafer wet type processing device of the utility model embodiment one sprays
The schematic diagram for the gas thimble that air-flow is formed.
The schematic top plan view for the single-wafer wet type processing device that Fig. 6 the utility model embodiment two provides.
Fig. 7 is the section in single-wafer wet type processing device direction A-A along Fig. 6 that the utility model embodiment two provides
Schematic diagram.
Fig. 8-1~8-3 is the gas passage spray for the single-wafer wet type processing device that the utility model embodiment two provides
The schematic diagram for the gas thimble that gas out is formed.
Fig. 9 is that wafer is handled and used using the single-wafer wet type processing device of the utility model embodiment one
The single-wafer wet treatment method of the utility model embodiment three, the contrast schematic diagram of various performance parameters in treatment process.
Figure 10 is the flow diagram for the single-wafer wet treatment method that the utility model embodiment three provides.
100 semiconductor equipments
110 support components
120 pedestals
111 support portions
112 maintaining parts
113 gas chamber
The intermediate region of 111A support portion
The fringe region of 111B support portion
114 driving structures
115 mandrels
116 gas sources
130 gas passages
131 central concaves
132 annulus defects
The edge of 133 intermediate regions
The steam of 140 condensations
141 circular flaws
The skew back that the gas that gas passage 130 sprays when 510 support components are in idle mode is formed is to air-flow
The skew back that the gas that gas passage 130 sprays when 510' support component is in run-up mode is formed is to air-flow
The skew back that the gas that gas passage 130 sprays when 510 " support components are in tupe is formed is to air-flow
600 single-wafer wet type processing devices provided by the present application
The first side that the gas that edge gas passageway 621 sprays when 610 support components are in idle mode is formed
Edge gas thimble
The second side that the gas that edge gas passageway 621 sprays when 610' support component is in run-up mode is formed
Edge gas thimble
The third side that the gas that edge gas passageway 621 sprays when 610 " support components are in tupe is formed
Edge gas thimble
In the first of the gas formation that intermediate gas flow path 622 sprays when 620 support components are in idle mode
Between gas thimble
In the second of the gas formation that intermediate gas flow path 622 sprays when 620' support component is in run-up mode
Between gas thimble
Among the third that the gas that intermediate gas flow path 622 sprays when 620 " support components are in tupe is formed
Gas thimble
621 edge gas passageways
622 intermediate gas flow paths
640 first excircles
650 second excircles
W wafer
F downward power
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model
Example, those skilled in the art's every other embodiment obtained without creative efforts, belongs to this reality
With novel protected range.
Embodiment one
The present embodiment provides a kind of single-wafer wet type processing devices.As shown in figure 1-3, single-wafer wet type processing device
100 include wafer support component 110, which includes being used to support the support portion 111 of wafer and for solid
Determine the maintaining part 112 of wafer.The single-wafer wet type processing device 100 further includes the air chamber being arranged in inside support portion 112
Room 113, the gas chamber 113 are connected to the gas source of single-wafer wet type processing device 100.As shown in Figures 2 and 3, support portion 111
Upper surface have intermediate region 111A and fringe region 111B.It is equipped with and is conducted at the fringe region 111B of support portion 111
The gas passage 130 of the gas chamber 113.It is as shown in Figure 3 when to wafer W progress wet processed.Firstly, when support component is in
When idle mode, at this point, the gas that gas source provides is through the gas chamber 113 by gas passage 130 as shown in Fig. 2 and Fig. 5-1
Gas is provided to the gap between backside of wafer and the upper surface of support portion, and forms skew back to air-flow 510.Then, work as support
When component is in run-up mode, at this point, as shown in Fig. 5-2, air velocity increases, the upper surface of backside of wafer and support portion it
Between gap in form skew back to air-flow 510 '.Then, as shown in Fig. 5-3, into wet processed mode, air velocity continues to increase
Add, is remained fixed at wafer W in support component 110 by support portion 111 and maintaining part 112, then support component enters place
Manage the high-speed rotation of wafer, at this point, formed in gap between wafer lower surface and the upper surface of support portion skew back to
Air-flow 510 ".
During carrying out wet processed to wafer, form above-mentioned skew back to air-flow 510 " air-flow oblique blow in wafer W
The periphery at the back side can prevent treatment fluid from flowing into backside of wafer.However, the air-flow can not dispel the steaming in backside of wafer center
Vapour, as shown in Fig. 4-3, treatment fluid is easy to condense in the center of backside of wafer.
However, the single-wafer wet type processing device of the present embodiment still has several drawbacks.For example, in wafer-process process
In, when applying treatment fluid to wafer upper surface from top to bottom, treatment fluid can apply downward power F to wafer.As Fig. 5-3 institute
Show, the skew back that the gas sprayed from gas passage is formed " is only capable of the marginal portion of covering wafer, can not cover to air-flow 510
The intermediate region of wafer, therefore, wafer can go out because of power F there is a degree of central concave 131 in intermediate region, such as schemes
Shown in 4-1, this recess may be contacted with the edge 133 of the intermediate region 111A of support portion 111, contact area and wafer
There are temperature differences at other positions, consequently, it is possible to making the annulus defect 132 of the back side appearance of wafer as shown in the Fig. 4-2.
In addition, skew back shown in Fig. 5-3 " can dispel the steam in crystal round fringes region, but make crystalline substance to air-flow 510
Justify and be isolated outside steam and support component 110 in the gap between intermediate region and support portion, so that some vapor
It can not be discharged.As shown in Fig. 4-3, when entering the low-temperature treatment stage, steam can condense in the middle section of backside of wafer, steam
There are temperature differences for the region of condensation and other positions of wafer, are formed as shown in Fig. 4-4 in the middle section of backside of wafer
Circular flaw 141.
Embodiment two
The present embodiment provides a kind of single-wafer wet type processing devices, as shown in Figures 6 and 7, the single-wafer of the present embodiment
Wet type processing device 600 includes support component 110, and support component 110 includes being used to support support portion 111 and the setting of wafer
It is used to fix the maintaining part 112 of wafer W in the fringe region of the support portion 111, the upper surface of support portion 111 has marginal zone
The periphery of the fringe region 111B of the support portion 111, institute is arranged in domain 111B and intermediate region 111A, the maintaining part 112
It states and is provided on support portion 111 and can form multiple gas passages of multiple gas thimbles in the top of the support portion 111, it is more
A gas thimble can will be placed on 111 top of support portion and be held up by the fixed wafer of the maintaining part 112.
In a further embodiment of the present embodiment, multiple gas thimbles are located at institute with equidistant ring configuration mode
It states and is consolidated will be placed on above the support portion by the maintaining part between fringe region 111B and the intermediate region 111A
Fixed wafer is held up.
In the further embodiment of the present embodiment, as shown in fig. 7, multiple gas passages include being arranged in the branch
The edge gas passageway 621 of the fringe region 111B of support part 111 and the intermediate gas flow path that intermediate region 111A is set
622；
Wherein, the upper surface to gas direction and the support portion 111 of edge gas passageway 621 at an angle, and
Radially outward along the support portion 111；
The intermediate gas flow path 622 gives gas direction more vertical to gas direction relative to edge gas passageway 621
In the upper surface of the support portion 111, to constitute above-mentioned multiple gas thimbles.
In the further embodiment of the present embodiment, edge gas passageway 621 gives gas direction and the support portion
Angle between 111 upper surface is less than 60 °.
In a specific change case of the present embodiment, as shown in fig. 6, edge gas passageway 621 is evenly spaced apart to be distributed in
On the first excircle 640 of the fringe region 111B of support portion 111, the intermediate gas flow path 622 is evenly spaced apart point
Cloth is on the second excircle 650 of the intermediate region 111A of the support portion 111, and the edge gas passageway 621
Aperture with the intermediate gas flow path 622 in the upper surface of the support portion 111 is distributed in concentric circles.
In the further embodiment of the present embodiment, the adjacent intermediate gas flow path 622 of the central point C of support portion 111 and two
Aperture line between be in 10~20 ° of angles.
In the further embodiment of the present embodiment, the central point of support portion 111 and two adjacent intermediate gas flow paths
It is in 15 ° of angle between the line of 622 aperture, in this way, for example, can be on the second excircle 650 of intermediate region 111A
24 stomatas are set.
In another further embodiment of the present embodiment, as shown in fig. 7, the support portion 111 further includes being arranged in institute
State the gas chamber 113 inside support portion 111, edge gas passageway 621 and intermediate gas flow path 622 with gas chamber 113
It is connected, the gas provided by gas source 116 forms multiple gas thimbles through gas chamber 113 above intermediate gas flow path 622.
In the present embodiment further embodiment, as shown in fig. 7, support component 110 further includes pedestal 120, driving mechanism
114 and mandrel 115,110 secure bond of support component is on pedestal 120, and by mandrel 115 by 114 band of driving mechanism
It moves and rotates, maintaining part 112 may include multiple is fixed on support portion 111 for clamping and fixing the fixed link of wafer.
Embodiment three
A kind of single-wafer wet treatment method is present embodiments provided, as shown in Figure 10, and with continued reference to Fig. 6 to Fig. 8-
3, this method comprises the following steps:
Single-wafer wet type processing device provided by above-described embodiment two is provided.When wafer support component is in idle running mould
It when formula, sprays gas through multiple gas passages with the first flow velocity, forms multiple first gas thimbles.Under this mode, support group
Wafer is not placed on part.For example, the gas sprayed through edge gas passageway 621 is rectangular on support portion 111 as shown in Fig. 8-1
At the first edge gas thimble 610 of the fringe region 111B of covering 111 upper surface of support portion, sprayed through intermediate gas flow path 622
Gas out forms the first intermediate gas top of the intermediate region 111A of covering 111 upper surface of support portion above support portion 111
Needle 620.Above-mentioned first edge gas thimble 610 and the first intermediate gas thimble 620 do not overlap mutually.In this idle mode
Under, multiple gas passages persistently form above-mentioned first gas thimble to gas, can prevent the pollutants such as dust from falling into wafer support
The quality of wafer-process is influenced on component.The present embodiment provides that first flow velocity can be between 10~50L/min.
When the wafer support component is in run-up mode, increase gas flow rate makes gas with second flow speed through multiple institutes
Gas passage ejection is stated, multiple second gas thimbles are formed.In such a mode, wafer is not yet placed above support component, still
Support component is in the state of wafer load preparation.At this point, second flow speed is greater than above-mentioned first flow velocity.At this point, as Fig. 8-2 institute
Show, the gas sprayed through edge gas passageway 621 forms the marginal zone of covering 111 upper surface of support portion above support portion 111
The second edge gas thimble 610' of domain 111B, the gas flowed out through intermediate gas flow path 622 is formed above support portion 111 to be covered
The second intermediate gas thimble 620' of the intermediate region 111A of 111 upper surface of lid support portion.At this point, due to the second flow speed of gas
Opposite first flow velocity increases, and is formed by above-mentioned second edge gas thimble 610' and the second intermediate gas thimble 620' is mutually handed over
It is folded, the second gas thimble of covering support portion upper surface is formed above support portion.The present embodiment provides that the second flow speed can
Between 100~200L/min.
Then, when the wafer support component is in wet processed mode, continues to increase gas flow rate, make gas with third
Flow velocity is sprayed through multiple gas passages, forms multiple third gas thimbles.In such a mode, wafer W is placed on described
111 top of support portion of wafer support component 110, makes maintaining part 112 clamp wafer W, then provides wet type to the front of wafer
Processing solution handles wafer.At this point, the gas flowed out through edge gas passageway 621 is in support portion as shown in Fig. 8-3
111 tops form the third edge gas thimble 610 " of the fringe region 111B of covering 111 upper surface of support portion, through intermediate gas
The gas that channel 622 is flowed out is formed above support portion 111 in the third of the intermediate region 111A of covering 111 upper surface of support portion
Between gas thimble 620 ".At this point, the third flow velocity due to gas increases with respect to second flow speed, it is formed by above-mentioned third edge gas
Body thimble 610 " and third intermediate gas thimble 620 " continue mutually to overlap, and are formed above support portion 111 and support is completely covered
111 upper surface of portion and the third gas thimble for covering the back side wafer W.The present embodiment provides that the third flow velocity can be between 150
~250L/min.
As described above, when carrying out wafer-process, the third edge gas thimble 610 " of formation and third intermediate gas top
Needle 620 " (i.e. third gas thimble) can be full of the gap between support portion upper surface and backside of wafer.Since gas has third
Flow velocity, therefore, third gas thimble can form upward support force to wafer, and it is brilliant especially to form support in the middle section of wafer
Round upward power, wafer is held up.In this way when processing solution is from top to bottom to wafer applied force (such as power F shown in Fig. 3)
When, the support force that air-flow provides is enough to offset the downward power, and wafer is held up.So that wafer intermediate region will not be recessed,
The risk contacted with support portion upper surface intermediate region edge would not occur, so that backside of wafer be avoided annulus defect occur
(as shown in Fig. 4-1~Fig. 4-2).
On the other hand, due to third edge gas thimble 610 " and third intermediate gas thimble 620 " full of backside of wafer and
Gap between support sector upper surface, therefore, carry out wafer-process when, backside of wafer be completely in atmosphere (for example,
In one further embodiment of the present embodiment, which can choose N2), even if between backside of wafer and support sector upper surface
There are the impurity such as the steam entered in gap, can also be dispelled and be expelled from by the gas with third flow velocity.It is entirely handling in this way
In the process, there will be no steam to exist in above-mentioned gap.When carrying out low-temperature treatment, steam condensation would not also occur in crystalline substance
The case where circular surfaces, and then crystal column surface is avoided circular flaw occur (as shown in Fig. 4-3~Fig. 4-4).
In the further embodiment of the present embodiment, above-mentioned first flow velocity can be selected as 50L/min, and second flow speed can be selected
For 150L/min, third flow velocity can be selected as 250L/min.In the further embodiment of the present embodiment, above-mentioned third stream
Speed is preferably chosen as 180L/min.
In the present embodiment, as shown in figure 9, above-mentioned gas flow velocity has no too big difference relative to the gas flow rate in embodiment one
Not, therefore, when using processing method provided in this embodiment, total gas usage will not be significantly increased, and thus will not
Obviously increase the cost of wafer-process.
In the present embodiment in further embodiment, revolving speed of the support component under wet processed mode between 1000~
2000rpm。
In the further embodiments of the present embodiment, under tupe, the revolving speed of support component can be set as
2000rpm.Under this revolving speed, the processing solution of wafer upper surface can be thrown out of, what wafer lower surface was persistently sprayed always
Gas surrounds covering, therefore can be improved the yields of wafer.
Referring again to Fig. 9, relative under embodiment one, such as the tupe of embodiment one, the revolving speed of support component is most
It can be greatly 1200rpm, the revolving speed of support component can greatly improve in the present embodiment, such as can be improved to 2000rpm.It is higher
Rotation speed can correspondingly improve the E/A uniformity of wafer, improve the quality of wafer.
In addition, the single-wafer wet type processing device in compared with the existing technology, the high Design of Rotation of the present embodiment, it will not
Increase single-wafer wet type processing device complexity, single-wafer wet type processing device it is relatively easy efficiently and also manufacture at
This is low.
In another further embodiment of the present embodiment, it is specified that the center of wafer and periphery treatment temperature between 60~
80℃.In a still further embodiment, it can choose 80 DEG C for the treatment of temperature.
Referring still to Fig. 9, using single-wafer wet type processing device described in embodiment one, the treatment temperature highest of wafer
80 DEG C for the treatment of temperature can only can be used in the present embodiment to 60 DEG C.The quality of this wafer also correspondingly improved.
One alternate embodiment of the present embodiment equally provides a kind of single-wafer wet treatment method, not with embodiment three
It is repeated no more with place, the difference is that:
For another example shown in Fig. 8-1 to Fig. 8-3, first gas thimble, second gas thimble and third gas thimble are formed in institute
The top of the support portion 111 of support component 110 is stated, and is mainly distributed on the intermediate region 111A of the support portion 111, it is described
The gas gas of giving of first gas thimble, second gas thimble and the third gas thimble is nitrogen, wherein forming the third
The top of the support portion 111 is completely covered in the air-flow of gas thimble, will be placed on the wafer W of 111 top of support portion
It holds up and prevents wet processed liquid from condensing on the support portion and backside of wafer.
To sum up, following beneficial technical effect can be at least obtained by the above embodiments of the present invention:
1, by the way that multiple gas passages are arranged in the support portion of wafer support component, so that gas is mainly by support part
Between spray in region, the gas top that wafer is completely covered is formed in the gap between the upper surface and backside of wafer of support portion
Needle.The gas thimble plays the role of suspension to wafer and lifts, in this way in wet processed mode, wafer support component high speed rotation
When, it can be recessed to avoid the intermediate region of wafer, and then wafer and the edge of the intermediate region of support portion is also avoided to contact, thus
Avoid the annulus defect of wafer.
2, since the gas sprayed from multiple gas passages has certain flow velocity, when handling wafer, the gas
Body effectively can dispel or blow out the steam in wafer and support portion gap, between backside of wafer and the lower surface of support member
Gap forms gas thimble and especially condenses on the surface of intermediate region to avoid steam in crystal column surface, and then avoids generating
The central circular defect of crystal column surface.
3, it can be improved and carried out to wafer under temperature same case in view of beneficial effect described in the above-mentioned 1st, 2 article
The revolving speed of support component when processing, so as to improve the wafer E/A uniformity；Or the situation identical in the revolving speed of support component
Under, the controllable temperature uniformity when handling wafer can be improved.
4, the technical solution of the utility model does not increase the structure complexity of support component, not will increase design and production
Cost, is simple and efficient and manufacturing cost is low.
In short, can be reduced under the premise of not increasing design and production cost using the technical solution of the utility model
Wafer defect improves product yield.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type, those skilled in the art can various modification can be adapted and becomes in the case where not departing from the spirit and scope of the utility model
Type, such modifications and variations are each fallen within be defined by the appended claims within the scope of.
Claims (7)
1. a kind of single-wafer wet type processing device, including support component, which is characterized in that the support component includes for branch
The support portion of wafer and the maintaining part for fixing wafer are supportted, the upper surface of the support portion has fringe region and middle area
The periphery of the fringe region of the support portion is arranged in domain, the maintaining part, is provided in the support portion at least in the branch
The top of support part forms multiple gas passages of multiple gas thimbles, and multiple gas thimbles are with equidistant ring configuration mode position
Between the fringe region and the intermediate region, fixed by the maintaining part above the support portion will be placed on
Wafer is held up.
2. single-wafer wet type processing device according to claim 1, which is characterized in that multiple gas passages include
The edge gas passageway of multiple fringe regions that the support portion is set and multiple centres that the intermediate region is set
Gas passage；
Wherein, the upper surface to gas direction and the support portion of the edge gas passageway at an angle, and along described
Support portion is radially outward；
The intermediate gas flow path gives gas direction more perpendicular to described to gas direction relative to the edge gas passageway
The upper surface of support portion, to constitute multiple gas thimbles.
3. single-wafer wet type processing device according to claim 2, which is characterized in that the edge gas passageway is given
Angle between gas direction and the upper surface of the support portion is less than 60 °.
4. single-wafer wet type processing device according to claim 2, which is characterized in that the edge gas passageway is uniform
Compartment of terrain is distributed on the first excircle of the fringe region of the support portion, and the intermediate gas flow path is evenly spaced apart
It is distributed on the second excircle of the intermediate region of the support portion, and the edge gas passageway and the intermediate gas
Aperture of the body channel in the support portion upper surface is distributed in concentric circles.
5. single-wafer wet type processing device according to claim 4, which is characterized in that the central point of the support portion and
It is in 10~20 ° of angles between the line of the aperture of the two adjacent intermediate gas flow paths.
6. single-wafer wet type processing device according to claim 2, which is characterized in that the support portion further includes setting
Gas chamber inside the support portion, the edge gas passageway and the intermediate gas flow path all with the gas chamber
It is connected, forms multiple gas tops above the intermediate gas flow path through the gas chamber by the gas that gas source provides
Needle.
7. single-wafer wet type processing device according to claim 1 to 6, which is characterized in that the support group
Part further includes pedestal, driving mechanism and mandrel, and the support component is fixed on the base, and by the mandrel by
The driving mechanism drives and rotates, and the maintaining part includes multiple is fixed on the support portion to clamp and fix wafer
Fixed link.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821743880.1U CN208848857U (en) | 2018-10-26 | 2018-10-26 | A kind of single-wafer wet type processing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821743880.1U CN208848857U (en) | 2018-10-26 | 2018-10-26 | A kind of single-wafer wet type processing device |
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| CN208848857U true CN208848857U (en) | 2019-05-10 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048466A (en) * | 2019-12-26 | 2020-04-21 | 北京北方华创微电子装备有限公司 | Wafer clamping device |
| CN115116905A (en) * | 2022-07-12 | 2022-09-27 | 安徽森米诺智能装备有限公司 | A single wafer cleaning machine |
-
2018
- 2018-10-26 CN CN201821743880.1U patent/CN208848857U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048466A (en) * | 2019-12-26 | 2020-04-21 | 北京北方华创微电子装备有限公司 | Wafer clamping device |
| CN111048466B (en) * | 2019-12-26 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Wafer clamping device |
| CN115116905A (en) * | 2022-07-12 | 2022-09-27 | 安徽森米诺智能装备有限公司 | A single wafer cleaning machine |
| CN115116905B (en) * | 2022-07-12 | 2023-03-14 | 上海申和投资有限公司 | Single wafer type wafer cleaning machine |
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