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CN208818383U - pressure sensing structure - Google Patents

pressure sensing structure Download PDF

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Publication number
CN208818383U
CN208818383U CN201821540919.XU CN201821540919U CN208818383U CN 208818383 U CN208818383 U CN 208818383U CN 201821540919 U CN201821540919 U CN 201821540919U CN 208818383 U CN208818383 U CN 208818383U
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China
Prior art keywords
substrate
conducting wire
electrode contact
conductive structure
conductive
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CN201821540919.XU
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Inventor
张敏蕙
谢维廷
林永峻
梁圣泉
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Baiyi Medicine Material Technology Co ltd
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Baiyi Medicine Material Technology Co ltd
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Abstract

The utility model is to arrange a hollow structure with non-parallel extension between a first substrate and a second substrate, as a supporting structure, when the first substrate and the second substrate are under increasing pressure, the gradual deformation generated at the hollow structure can be controlled, so that a first conductive structure of the first substrate is contacted with a second conductive structure of the two substrates at a larger deformation area, so as to form a current path between a first electrode contact connected to the first conductive structure and a second electrode contact connected to the second conductive structure, and when the pressure is increased, since the deformation is controlled, the area of the contact region and the rate of change of the length of the current path are controlled, the total resistance value reduction speed of the current path is controlled and the current path cannot enter a saturation area quickly, so that the sensing performance of the pressure sensing structure is improved.

Description

Pressure sensing structure
Technical field
The utility model is relevant to pressure-sensing, especially with respect to a kind of sensing structure of pressure-sensing.
Background technique
If TaiWan, China announces No. 447366 patents of I, a kind of pressure-sensing component is disclosed, there is an insulation bottom Layer, a flexible insulating top layer and an at least spacer, the surface of the insulating bottom layer is provided with a bottom conduct piece, and this is flexible absolutely One side surface of the adjacent insulating bottom layer of edge top layer has a top layer conductive part, and the top layer conductive part is with respect to the bottom conduct piece Position and be arranged, and the spacer is set between the insulating bottom layer and the flexible insulating top layer.This prior art, due to pressure The difference of power size will affect the contact area of the top layer conductive part and the bottom conduct piece, thus have the variation in impedance, Therefore born pressure size can be learnt by impedance variations.Thus it can reach sensing pressure without the use of pressure drag material Function, and have the advantages that reduce cost.
It please refers to shown in " Fig. 1 ", however, it is quick to generate impedance when the initial stage that pressure gradually increases for this prior art The characteristic of decline, with Fig. 1 presented to be exactly that P1 is corresponding generate quick impedance variations R1, continue to increase pressure, will be limited by The characteristic of conduct piece structure influences, and the incrementss of contact area can become fairly limited, and corresponding impedance fall is then substantially Reduce, close to saturation state, to be presented in Fig. 1, under the uniform pressure variation of P1=P2, R1 is but much larger than R2, leads to it Applicable pressure sensing range is restricted;To meet the sensing demand of wide pressure, then because approaching to saturation quickly Area, when pressure increase to a certain extent after, contact area is just difficult to be further added by, that is, impedance has been saturated, with pressure increase The impedance variations value very little of generation, thus in practice with upper, rear end needs voltage amplifier to amplify the electricity for representing impedance value It presses signal, the problem of can effectively measuring, be easy misalignment, rapidly enters saturation state and make pressure value and impedance between the two The non-linear relation of height is presented in relationship, also affects application range.
Utility model content
The main purpose of the utility model is to disclose a kind of pressure sensing structure with larger pressure sensing capabilities.
In order to achieve the above object, the pressure sensing structure of the utility model, it includes a first substrate, a second substrate, one first Electrode contact, a second electrode contact and a support construction, wherein one first conductive structure, second base is arranged in the first substrate One second conductive structure is arranged in plate, which is set on the first substrate and is correspondingly connected with the first conductive knot Structure, the second electrode contact are set in the second substrate and are correspondingly connected with second conductive structure, which is set to It between the first substrate and the second substrate, and allows the first substrate and the second substrate is separated by a gap, and this is allowed first to lead Electric structure is separated by the gap with second conductive structure and is correspondingly arranged up and down.
With the hollow structure of a non-parallel extension in the support construction, when the first substrate and the second substrate bear by When cumulative big pressure, gradual deformation can be generated at the hollow structure, and first conductive structure is driven second to lead with this Electric structure is generated in place of the larger deformation region of the first substrate and the second substrate and is contacted, and is allowed and is set to far from the contact zone A current path is formed between the first electrode contact and the second electrode contact in domain, and in the first electrode contact and can be somebody's turn to do It is measured between second electrode contact and arrives resistance value;Pressure is when continuing growing again, the deformation of the first substrate and the second substrate with The contact area of first conductive structure and second conductive structure can all gradually increase, but because be had by hollow structure The influence of non-parallel elongation property so that the first substrate and the speed of deformation of the second substrate are controlled, also allow this first The contact area area of conductive structure and second conductive structure, which is increased speed, to be controlled, and is led to the first electrode contact and is somebody's turn to do The length of the current path between second electrode contact reduces speed and is controlled, and then leads to the first electrode contact and be somebody's turn to do Resistance value between second electrode contact reduces speed and is also controlled, and will not enter saturation region quickly.
As described above, the utility model has the hollow structure of a non-parallel extension through the support construction, the electric current is limited The length pace of change in path can effectively limit the pace of change of impedance value, and in the case where applying larger pressure, impedance value will not be very Enter saturation region fastly, thus there can be the ability for sensing larger pressure limit, be conducive to the acquisition of rear end pressure signal, and can be in Practice is effectively reduced cost with the upper setting for saving amplifier.
Detailed description of the invention
Fig. 1 is the pressure and impedance relationship figure of existing pressure sensing structure.
Fig. 2 is the three-dimensional structure diagram of first embodiment.
Fig. 3 is the open structure floor map of first embodiment.
Fig. 4 is the compressive deformation schematic diagram of first embodiment.
Fig. 5 is first embodiment in the guiding path schematic diagram of smaller compression.
Fig. 6 is first embodiment in the guiding path schematic diagram of larger compression.
Fig. 7 is the pressure and impedance relationship figure of first embodiment pressure sensing structure.
Fig. 8 is the open structure floor map of second embodiment.
Fig. 9 is the pressure and impedance relationship figure of second embodiment pressure sensing structure.
Figure 10 is the open structure floor map of 3rd embodiment.
Figure 11 is the open structure floor map of fourth embodiment.
Figure 12 is the open structure floor map of the 5th embodiment.
Figure 13 is the open structure floor map of sixth embodiment.
Figure 14 is sixth embodiment in the guiding path schematic diagram of smaller compression.
Figure 15 is sixth embodiment in the guiding path schematic diagram of larger compression.
Figure 16 is the open structure floor map of the 7th embodiment.
Figure 17 is the 7th embodiment in the guiding path schematic diagram of smaller compression.
Figure 18 is the 7th embodiment in the guiding path schematic diagram of larger compression.
Specific embodiment
In relation to the utility model technology contents, feature and effect, the preferred embodiment of schema is referred to specifically in following cooperation In bright, can clearly it present.
It please refers to shown in " Fig. 2 " and " Fig. 3 ", is the first embodiment of the utility model pressure sensing structure, it includes one first Substrate 10, a second substrate 20, a first electrode contact 30, a second electrode contact 40 and a support construction 50A, wherein this One first conductive structure 11 is arranged in one substrate 10, which is arranged one second conductive structure 21, the first electrode contact 30 are set on the first substrate 10 and are correspondingly connected with first conductive structure 11, the second electrode contact 40 be set to this second Second conductive structure 21 is correspondingly connected on substrate 20.
Again also referring to shown in " Fig. 4 ", " Fig. 5 " and " Fig. 6 ", support construction 50A be set to the first substrate 10 with Between the second substrate 20, and the first substrate 10 and the second substrate 20 is allowed to be separated by a gap 60, to allow first conduction to tie Structure 11 is separated by the gap 60 with second conductive structure 21 and is correspondingly arranged up and down, and support construction 50A is non-parallel with one The hollow structure 51 of extension, in practical structures, support construction 50A forms the hollow structure 51 for V shape stripe shape, should First conductive structure 11 is one first conducting wire 111A, and first conducting wire 111A is set to the first substrate 10 and corresponds to Region in the hollow structure 51;And second conductive structure 21 is one second conducting wire 211A, and second conducting wire 211A is set to the region of corresponding first conducting wire 111A of the second substrate 20.
And when the first substrate 10 and the second substrate 20 bear the pressure being gradually increased, it can be produced at hollow structure 51 Raw gradual deformation, and drive the first conductive structure 11 with second conductive structure 21 in the first substrate 10 and the second substrate Contact (as shown in Figure 5) is generated in place of 20 larger deformation region, and the first electrode for being set to the separate contact area is allowed to connect A current path 70 is formed between point 30 and the second electrode contact 40, and can be connect in first electrode contact 30 and the second electrode It is measured between point 40 and arrives resistance value;Pressure is when continuing growing again, the deformation of the first substrate 10 and the second substrate 20 and this The contact area of one conductive structure 11 and second conductive structure 21 can all gradually increase, but because be had by hollow structure 51 There is the influence of non-parallel elongation property, so that first substrate 10 and the speed of deformation of the second substrate 20 are controlled, also allows this The contact area area of first conductive structure 11 and second conductive structure 21, which is increased speed, to be controlled, and the first electrode is caused The length of the current path 70 between contact 30 and the second electrode contact 40 reduces speed and is controlled (as shown in Figure 6), And then cause the resistance value between the first electrode contact 30 and the second electrode contact 40 to reduce rate and be also controlled, it will not Enter saturation region quickly.
Referring again to the pressure and impedance relationship figure for shown in " Fig. 7 ", being the utility model first embodiment pressure sensing structure, such as Shown in figure, when pressure gradually increases, impedance fall is limited by the hollow structure 51 of non-parallel extension, can't It generates violent variation, but presents and gradually decrease, it is identical as P3=P4 in different measurement regions to be presented in Fig. 7 Under pressure change, R3 can level off to R4, show that its applicable pressure sensing range is more broad, can satisfy wide pressure Sensing demand, for comparing existing Fig. 1, the change in impedance value of the utility model will can just approach to saturation under biggish pressure, Scalable pressure limit is significantly greater than existing, thus the utility model with larger sensing range and has more linear sensing energy Power.
It is the utility model second embodiment referring again to shown in " Fig. 8 ", in the utility model second embodiment, support construction 50B Form the hollow structure 51 for U-shaped stripe shape, first conductive structure 11 be one first conducting wire 111B, and this first Conducting wire 111B is set to the region in the corresponding hollow structure 51 of the first substrate 10;And second conductive structure 21 is one Second conducting wire 211B, and second conducting wire 211B is set to corresponding first conducting wire 111B of the second substrate 20 Region.
Please referred to shown in " Fig. 9 " again, in order to allow the relationship of pressure and impedance linearize, the first conducting wire 111B and this The width of second conducting wire 211B, can respectively with far from the first electrode contact 30 and the second electrode contact 40 and by Cumulative plus (as shown in Figure 8), the first conducting wire 111B and its impedance of the width reverse correlation of second conducting wire 211B, The bigger impedance of width is smaller, that is, the first conducting wire 111B and second conducting wire 211B can be designed to further away from this First electrode contact 30 and the second electrode contact 40, impedance value is smaller, thus change the first conducting wire 111B and this The width of two conducting wire 211B can allow pressure and the relationship of impedance to linearize (as shown in Figure 9).Likewise, first implements The width of the first conducting wire 111A and second conducting wire 211A of example can also connect with far from the first electrode respectively Point 30 with the second electrode contact 40 and gradually increase, to reach the demand for allowing the relationship of pressure and impedance to linearize.
It is the utility model 3rd embodiment referring again to shown in " Figure 10 ", in the utility model 3rd embodiment, support construction 50C forms the hollow structure 51 for ellipticity stripe shape, which is at least one first conducting wire 111C, and those first conducting wires 111C is set in the corresponding hollow structure 51 of the first substrate 10, and outwardly by center Diverging and length having the same;And second conductive structure 21 is at least the one second of corresponding those first conducting wires 111C Conducting wire 211C, and those second conducting wires 211C is set to corresponding those the first conducting wires 111C of the second substrate 20 Region.And the width of those the first conducting wire 111C and those second conducting wires 211C, with far from the first electrode Contact 30 is gradually increased with the second electrode contact 40, to allow the relationship of pressure and impedance to linearize.
It is the utility model fourth embodiment referring again to shown in " Figure 11 ", in the utility model fourth embodiment, support construction 50D forms the hollow structure 51 for round stripe shape, which is at least one first conducting wire 111D, and those first conducting wires 111D is set to the intermediate region of the corresponding hollow structure 51 of the first substrate 10, and by Center dissipates outwardly and length having the same;And second conductive structure 21 is to correspond to those first conducting wires 111D extremely Few one second conducting wire 211D, and those second conducting wires 211D is set to those corresponding first conductions of the second substrate 20 The region of route 111D.
Referring again to shown in " Figure 12 ", being the 5th embodiment of the utility model, in this present embodiment, support construction 50E is circle Shape stripe shape and form the hollow structure 51, which is one first conducting wire 111E, and this first is led Electric line 111E is set to the intermediate region of the corresponding hollow structure 51 of the first substrate 10, and the first conducting wire 111E is enclosed Around formation helical form;And second conductive structure 21 is the one second conducting wire 211E of corresponding first conducting wire 111E, And second conducting wire 211E is set to the region of corresponding first conducting wire 111E of the second substrate 20.
The structure of each embodiment as described above, when the pressure was increased, positioned at the hollow structure 51 the first substrate 10 with The second substrate 20 can generate gradual deformation at hollow structure 51, and drive first conductive structure 11 and second conduction The contact area of structure 21 gradually increases, thus the current path between the first electrode contact 30 and the second electrode contact 40 70 length can be gradually reduced, and the resistance value between the first electrode contact 30 and the second electrode contact 40 is caused also gradually to subtract It is few, but because by hollow structure 51 there is non-parallel elongation property to be influenced, so that first substrate 10 and the second substrate 20 speed of deformation is controlled, and the contact area area of first conductive structure 11 and second conductive structure 21 is also allowed to increase Speed is controlled, and the length of the current path 70 between the first electrode contact 30 and the second electrode contact 40 is caused to subtract Small speed is controlled, and will not enter saturation region quickly, and can be used as good pressure sensing structure.
Referring again to shown in " Figure 13 ", " Figure 14 " and " Figure 15 ", being the utility model sixth embodiment, in this present embodiment, Equally there is the first substrate 10, the second substrate 20 and support construction 50F, wherein set by the first substrate 10 this first Conductive structure 11 include one first conducting wire 111F and one second conducting wire 211F, and the first conducting wire 111F and this There is a gap 80 between second conducting wire 211F;Second conductive structure 21 of the second substrate 20 is then a conductive plane 212A;And the first electrode contact 30 is set to first substrate 10 and connects first conducting wire 111F, and the second electrode Contact 40 is set to first substrate 10 and the second conducting wire 211F of connection.
In this present embodiment, support construction 50F forms the hollow structure of non-parallel extension for V shape stripe shape 51, the first conducting wire 111F and second conducting wire 211F are set to the corresponding hollow structure 51 of the first substrate 10 It is interior, and conductive plane 212A is set to the corresponding first conducting wire 111F of the second substrate 20 and second conducting wire The region of 211F;And the first substrate 10 and the second substrate 20 are understood when the pressure for bearing to be gradually increased in hollow structure 51 Place generates gradual deformation, and drive the first conductive structure 11 and second conductive structure 21 in the first substrate 10 and this second Contact is generated in place of the larger deformation region of base version 20, and second conductive structure 21 can contact first conductive structure 11 simultaneously The first conducting wire 111F and second conducting wire 211F, allow this to be set to first electrode far from the contact area and connect Form the current path 71 (as shown in figure 14) between point 30 and the second electrode contact 40, and can in first electrode contact 30 and It is measured between the second electrode contact 40 and arrives resistance value;When pressure continues growing again, the first substrate 10 and the second substrate 20 Deformation and the contact area of first conductive structure 11 and second conductive structure 21 can all gradually increase, but because by Hollow structure 51 has the influence of non-parallel elongation property so that the speed of deformation of first substrate 10 and the second substrate 20 by Control, also allows the contact area area of first conductive structure 11 and second conductive structure 12 to be increased speed and is controlled, lead It causes the length of the current path 71 between the first electrode contact 30 and the second electrode contact 40 to reduce speed to be controlled (as shown in figure 15), so cause the resistance value between the first electrode contact 30 and the second electrode contact 40 also reduce also by To control, saturation region will not be entered quickly.
Referring again to shown in " Figure 16 ", " Figure 17 " and " Figure 18 ", being the 7th embodiment of the utility model, in this present embodiment, Equally there is the first substrate 10, the second substrate 20 and support construction 50G, wherein the first conductive structure of the first substrate 10 11 include one first conducting wire 111G, and second conductive structure 21 of the second substrate 20 is a conductive plane 212B, and should The conductivity of second conductive structure 21 is greater than the conductivity of the first conductive structure 11, which is set to the first base Plate 10 and the one end for connecting first conducting wire 111G;The second electrode contact 40 be set to first substrate 10 and connect this The other end of one conducting wire 111G.
Support construction 50G is ellipticity stripe shape and forms the hollow structure 51 of non-parallel extension, and this first Conducting wire 111G is set in the hollow structure 51;Conductive plane 212B is set to corresponding this of the second substrate 20 and first leads The region of electric line 111G;And the first substrate 10 and the second substrate 20 are understood when the pressure for bearing to be gradually increased in hollow Gradual deformation is generated at structure 51, and drive the first conductive structure 11 and second conductive structure 21 in the first substrate 10 with Contact is generated in place of the larger deformation region of the second substrate 20, is allowed and is set to the first electrode contact far from the contact area The current path 72 (as shown in figure 17) of a high electrical conductivity is formed between 30 and the second electrode contact 40, and is reduced It is measured between one electrode contact 30 and the second electrode contact 40 and arrives resistance value;When pressure continues growing again, the first substrate 10 The contact area of deformation and first conductive structure 11 and second conductive structure 21 with the second substrate 20 all can gradually increase Add, but because by hollow structure 51 there is non-parallel elongation property to be influenced, so that first substrate 10 and the second substrate 20 speed of deformation is controlled, and the contact area area of first conductive structure 11 and second conductive structure 21 is also allowed to increase Speed is controlled, and leads to the current path 72 of high electrical conductivity between the first electrode contact 30 and the second electrode contact 40 The length amount of gradually increasing be controlled (as shown in figure 18), and then lead to the first electrode contact 30 and the second electrode contact Resistance value between 40 reduces rate and is also controlled, and will not enter saturation region quickly.
It is as described above, the utility model compares existing advantage:
1. the utility model through design the support construction in the hollow structure geometrical property, make the first substrate and this second When by different pressures, deformation quantity can be controlled substrate, not have deformation suddenly, therefore can control electric current road The change of electrical path length, and then the variation of impedance value is effectively controlled, impedance value can just be tended to be saturated under great pressure, thus There can be larger pressure sensing capabilities.
2. impedance value can just tend to be saturated under great pressure, thus the corresponding pressure limit of impedance is larger, measures resistance The corresponding pressure limit of anti-voltage signal is also larger, is conducive to the acquisition of rear end signal, and can save the setting of amplifier, has Effect reduces cost.
3. can pass through the conducting wire of design on-fixed width, when bearing different pressures range, impedance rate of change is maintained It is constant, it allows pressure value and impedance value that linear approximate relationship is presented, increases and measure accuracy.
4. linear approximate relationship is presented in pressure value and impedance value, changing greatly for impedance value under unit pressure can be made, can be increased Add signal noise ratio, increases noise resisting ability.
Only as described above, the only preferred embodiment of the utility model, when cannot be limited with this utility model implementation model It encloses, i.e., all still belongs to according to simple equivalent changes and modifications made by the utility model claim and novel description generally In the range of the utility model patent covers.

Claims (10)

1. a kind of pressure sensing structure, it is characterised in that include:
One first conductive structure is arranged in one first substrate, the first substrate;
One second conductive structure is arranged in one the second substrate, the second substrate;
One first electrode contact, the first electrode contact are set on the first substrate and are correspondingly connected with first conductive structure;
One second electrode contact, the second electrode contact are set in the second substrate and are correspondingly connected with second conductive structure; And
One support construction, the support construction are set between the first substrate and the second substrate, and allow the first substrate with should The second substrate is separated by a gap, corresponding is up and down set with allowing first conductive structure with second conductive structure to be separated by the gap It sets, and the support construction has the hollow structure of a non-parallel extension, which is gradually increased with the second substrate receiving Pressure when, gradual deformation can be generated at the hollow structure, make first conductive structure and second conductive structure in compared with Contact in place of big deformation region, allows and is set between the first electrode contact and the second electrode contact far from the contact area Form a current path.
2. pressure sensing structure according to claim 1, it is characterised in that the support construction is formed for V shape stripe shape The hollow structure, which is one first conducting wire, and first conducting wire is set to the first substrate pair Should hollow structure intermediate symmetry line region;And second conductive structure is one second conducting wire, and second conduction Route is set to the region that the second substrate corresponds to first conducting wire.
3. pressure sensing structure according to claim 1, it is characterised in that the support construction is formed for U-shaped stripe shape The hollow structure, which is one first conducting wire, and first conducting wire is set to the first substrate pair Should hollow structure intermediate symmetry line region;And second conductive structure is one second conducting wire, and second conduction Route is set to the region that the second substrate corresponds to first conducting wire.
4. pressure sensing structure according to claim 2 or 3, it is characterised in that first conducting wire and second conduction The width of route is gradually increased with far from the first electrode contact and the second electrode contact respectively.
5. pressure sensing structure according to claim 1, it is characterised in that the support construction be ellipticity stripe shape and The hollow structure is formed, which is at least one first conducting wire, and those first conducting wires are set to this First substrate corresponds to the intermediate region of the hollow structure, and is dissipated outwardly by center and length having the same;And this second is led Electric structure is at least one second conducting wire of those corresponding the first conducting wires, and those second conducting wires be set to this Two substrates correspond to the region of those the first conducting wires.
6. pressure sensing structure according to claim 5, it is characterised in that those first conducting wires second are led with those The width of electric line is gradually increased with far from the first electrode contact and the second electrode contact.
7. pressure sensing structure according to claim 1, it is characterised in that the support construction be round stripe shape and The hollow structure is formed, which is at least one first conducting wire, and those first conducting wires are set to this First substrate corresponds to the intermediate region of the hollow structure, and is dissipated outwardly by center and length having the same;And this second is led Electric structure is at least one second conducting wire of those corresponding the first conducting wires, and those second conducting wires be set to this Two substrates correspond to the region of those the first conducting wires.
8. pressure sensing structure according to claim 1, it is characterised in that the support construction be round stripe shape and The hollow structure is formed, which is one first conducting wire, and first conducting wire is set to first base Plate corresponds to the intermediate region of the hollow structure, and the first conducting wire circle is around formation helical form;And second conductive structure is One second conducting wire of corresponding first conducting wire, and second conducting wire be set to the second substrate correspond to this first The region of conducting wire.
9. a kind of pressure sensing structure, it is characterised in that include:
One first conductive structure is arranged in one first substrate, the first substrate, which includes one first conducting wire With one second conducting wire, and between first conducting wire and second conducting wire have a gap;
One second conductive structure is arranged in one the second substrate, the second substrate, which is a conductive plane;
One first electrode contact, the first electrode contact are set to the first substrate and connect first conducting wire;
One second electrode contact, the second electrode contact are set to the first substrate and connect second conducting wire;And
One support construction, the support construction are set between the first substrate and the second substrate, and allow the first substrate with should The second substrate is separated by a gap, which is separated by the gap with second conductive structure and is correspondingly arranged up and down, should Support construction forms the hollow structure of a non-parallel extension, first conducting wire and second conduction for V shape stripe shape Route is set to the region that the first substrate corresponds to the intermediate symmetry line of the hollow structure, and the conductive plane be set to this second Substrate corresponds to the region of first conducting wire and second conducting wire;And be located at the hollow structure at the first substrate with The second substrate in bear be gradually increased pressure when can generate deformation at the hollow structure, and make first conductive structure and Second conductive structure contact in place of the larger deformation region of the hollow structure, and second conductive structure can contact this simultaneously First conducting wire of first conductive structure and second conducting wire, allow first electricity being set to far from the contact area A current path is formed between polar contact and the second electrode contact.
10. a kind of pressure sensing structure, it is characterised in that include:
One first conductive structure is arranged in one first substrate, the first substrate, which includes one first conducting wire;
One second conductive structure is arranged in one the second substrate, the second substrate, which is a conductive plane, and this The conductivity of two conductive structures is greater than the conductivity of first conductive structure;
One first electrode contact, the first electrode contact are set to the first substrate and connect one end of first conducting wire;
One second electrode contact, the second electrode contact are set to the first substrate and connect the another of first conducting wire End;And
One support construction, the support construction are set between the first substrate and the second substrate, and allow the first substrate with should The second substrate is separated by a gap, which is separated by the gap with second conductive structure and is correspondingly arranged up and down, should Support construction forms the hollow structure of a non-parallel extension for ellipticity stripe shape, and first conducting wire is set to this In hollow structure;The conductive plane is set to the region that the second substrate corresponds to first conducting wire;And the first substrate with The second substrate can generate gradual deformation when the pressure for bearing to be gradually increased at the hollow structure, and drive this first Conductive structure is generated in place of the larger deformation region of the first substrate and the second substrate with second conductive structure and is contacted, and is allowed The current path of a high electrical conductivity is formed between the first electrode contact and the second electrode contact.
CN201821540919.XU 2018-09-20 2018-09-20 pressure sensing structure Active CN208818383U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020258061A1 (en) * 2019-06-26 2020-12-30 百医医材科技股份有限公司 Pressure sensing system and pressure sensing setting method
WO2022021052A1 (en) * 2020-07-28 2022-02-03 深圳市汇顶科技股份有限公司 Capacitive pressure sensor and electronic device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020258061A1 (en) * 2019-06-26 2020-12-30 百医医材科技股份有限公司 Pressure sensing system and pressure sensing setting method
WO2022021052A1 (en) * 2020-07-28 2022-02-03 深圳市汇顶科技股份有限公司 Capacitive pressure sensor and electronic device

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