CN208741937U - Sedimentary origin and sputtering equipment for sputtering sedimentation - Google Patents
Sedimentary origin and sputtering equipment for sputtering sedimentation Download PDFInfo
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- CN208741937U CN208741937U CN201590001451.5U CN201590001451U CN208741937U CN 208741937 U CN208741937 U CN 208741937U CN 201590001451 U CN201590001451 U CN 201590001451U CN 208741937 U CN208741937 U CN 208741937U
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- 238000004062 sedimentation Methods 0.000 title claims abstract description 30
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A kind of sedimentary origin and sputtering equipment for sputtering sedimentation is provided, wherein sedimentary origin includes: at least one rotatable cathode (30)；RF power arranges (20)；And power conveying assembly (40, 140), the RF power is arranged and is connect with the rotatable cathode, wherein the power conveying assembly includes the first power connector (42, 142, 342, and second source connector (44 442), 144, 344, 444), for two positions (32 spaced apart, 34) place provides the RF energy arranged from the RF power to the rotatable cathode simultaneously, wherein the RF power arrangement includes matching box (21), wherein the power conveying assembly includes: the first electrical connector (146, 246), connect the matching box and first power connector；And second electrical connector (148,248), connect the matching box and the second source connector, wherein the matching box (21) includes output terminal (25), and the output terminal is moveably mounted along at least one of first electrical connector (246) and described second electrical connector (248).
Description
Technical field
The embodiments of the present invention is related to sedimentary origin and sputtering equipment for sputtering sedimentation.Embodiment is specific
Relate to the use of the sputtering sedimentation source of rotatable cathode sputtered for radio frequency (RF) and for being sputtered in vacuum chamber
The RF sputtering equipment of deposition.
Background technique
PVD process, especially sputtering technology obtain more and more in some technical fields (such as display manufacturing)
Concern.The good deposition rate with enough layer characteristics can be obtained by various sputtering technologies.Sputtering, especially magnetic control splashes
It penetrates, is the technology with metal or non-metallic layer coated substrate (such as glass or plastic base).Therefore, by using plasma
Carry out sputtering target material to generate coating material stream.With the high-energy particle collision from plasma as a result, material from target table
Face is released, wherein plasma parameter, and pressure, power, gas, magnetic field etc. are controlled.From target discharge material from
Target is advanced towards one or more substrates to be coated and is adhered on the substrate.A variety of materials, including metal, semiconductor
And dielectric substance, desired specification can be sputtered onto.Magnetron sputtering gets the nod in various applications, including partly leads
Body processing, optics coating, food packaging, magnetic recording and protectiveness wear-resistant coating.
Known sputtering device includes: the power arrangement with the power supply for generating and supplying electric energy；For will be described
Energy is deposited on the power conveying assembly in the gas for exciting and maintaining plasma；For controlling plasma ion
The magnetic element of movement；And at least one cathode, at least one described cathode include for being carried out by using plasma
Sputtering is to provide the target of coating material.Sputtering is to be used the various devices with different electrical, magnetism and mechanical realization complete
At.Known construction includes that power is arranged, provides the direct current (DC) or alternating current (AC) for generating plasma, wherein
The AC electromagnetic field for being applied to gas usually provides plasma rate more higher than DC electromagnetic field.In radio frequency (RF) sputtering equipment
In, plasma is impacted and maintained by applying RF electric field.Accordingly it is also possible to sputter electrically non-conductive material.There to be intermediate frequency
(MF) the DC sputtering sputtered and DC sputtering are compared, and DC sputtering provides highest deposition rate, and RF sputtering offer is minimum
Deposition rate.
Can be used has static target (such as plate target) and rotary target material (the cylindrical target such as rotated) two
The sputtering device of person.In general, the sputtering device with rotary target material is only applicable to hand over using DC operation or use down to intermediate frequency
Galvanic electricity operation, and RF transmitting operation cannot be used.Therefore, this device is only applicable to deposition conductive layer.In recent years, it has made efforts to
The advantages of to combine rotatable target and RF sputtering.
Utility model content
In view of above-mentioned, according to independent claims, provide for the sedimentary origin of sputtering sedimentation and in a vacuum
Carry out the device of sputtering sedimentation.Other designs of the utility model, advantages and features are aobvious from dependent claims, description and attached drawing
And it is clear to.
According to the sputtering sedimentation source as described herein embodiment there is provided for sputtering sedimentation.The source includes: to be used for
Supply the RF power arrangement of RF power；At least one rotatable cathode, at least one described rotatable cathode include for splashing
The target of release coating material during penetrating；And power conveying assembly, RF power is arranged and is connect with rotatable cathode, thus
The RF energy arranged from RF power is fed to rotatable cathode.The power conveying assembly includes for mentioning to rotatable cathode
The first power connector for the RF energy arranged from RF power, and RF power is come from for providing simultaneously to rotatable cathode
The second source connector of the RF energy of arrangement, however the first power connector is spaced apart with second source connector and by cloth
It sets.It therefore, can be at least one position in first position and the second position being spaced apart with first position, and especially
Ground feeds RF energy to rotatable cathode at both first position and the second position place simultaneously.The wherein RF power arrangement packet
Matching box is included, wherein the power conveying assembly includes: the first electrical connector, the matching box is connected and first power supply connects
Connect device；And second electrical connector, the matching box and the second source connector are connected, wherein the matching box includes defeated
Terminal out, the output terminal along at least one of first electrical connector and second electrical connector movably
Installation.
Above-mentioned sedimentary origin, wherein first power connector and the second source connector (relative to it is described can
The sectional plane of rotating cathode center intersection is arranged substantially symmetrically.
Above-mentioned sedimentary origin has first axis end and with described the wherein the rotatable cathode has cylindrical form
The second opposite axial end portion of one axial end, and wherein first power connector is mounted at the first axis end,
And the second source connector is mounted at second axial end.
Above-mentioned sedimentary origin, wherein at least one of first power connector and the second source connector pass through
The RF energy that capacitive coupling or inductive coupling are provided to the rotatable cathode is transmitted.
Above-mentioned sedimentary origin, wherein the second impedance of the first impedance of first electrical connector and second electrical connector
Difference is less than 10%, specifically, wherein first impedance and second impedance are essentially identical and/or wherein described first
The first resistor of electrical connector and the second resistance of second electrical connector difference are less than 10%, specifically, wherein described the
One resistance and the second resistance are essentially identical.
Above-mentioned sedimentary origin, including regulating device with for adjusting first electrical connector the first electrical property and/or institute
The second electrical property of the second electrical connector is stated, specifically, by changing first electrical connector and/or second electrical connection
The length of part is adjusted.
Above-mentioned sedimentary origin, wherein first electrical connector and second electrical connector are provided by conductive rod, it is described to lead
Torch is connected between first power connector and the second source connector, and the matching box is installed described
It is moved on conductive rod.
Above-mentioned sedimentary origin, wherein at least one of first power connector and the second source connector include
Cathode holder, the cathode holder can be mobile from the operating position for sputtering operation relative to the rotatable cathode
To the installation site for dismantling the rotatable cathode.
Above-mentioned sedimentary origin, wherein the cathode holder is that can move on the axial direction far from the rotatable cathode
Dynamic.According to embodiment there is provided the sputtering equipments for carrying out sputtering sedimentation in vacuum chamber.Described device includes using
In the sputtering sedimentation source for carrying out sputtering sedimentation in vacuum chamber.Sputtering sedimentation source includes: that setting is revolved vacuum chamber is indoor
It turns out cloudy pole, the cathode includes providing the target of material to be deposited；For supplying the RF power arrangement of RF power, the RF power
Arrangement is arranged outside vacuum chamber；And institute is come from for providing at two positions spaced apart to the rotatable cathode
State RF power arrangement RF energy the first power connector and second source connector, wherein first power connector and
At least one of described second source connector includes vacuum feedthrough (feed-through), by RF energy from RF power cloth
It sets and is transferred in vacuum chamber.
Detailed description of the invention
Therefore, it in order to which the features described above of the utility model can be understood in detail, can be obtained by reference to embodiment
The more specific description of the utility model of above-mentioned brief overview.Attached drawing is related to the embodiments of the present invention, and below
Description:
Fig. 1 shows the schematic diagram of the sedimentary origin for sputtering sedimentation according to implementations described herein；
Fig. 2 shows the schematic diagrames according to the sedimentary origin for sputtering sedimentation of implementations described herein；
Fig. 3 shows the schematic side elevation of the sedimentary origin for sputtering sedimentation according to implementations described herein；
Fig. 4 shows the perspective schematic view of the embodiment of Fig. 3；
Fig. 5 shows the schematic diagram of the sedimentary origin for sputtering sedimentation according to implementations described herein；
Fig. 6 shows the schematic diagram of the sputtering equipment according to implementations described herein；
Fig. 7 shows the flow chart for illustrating operation for the method for the sedimentary origin of sputtering sedimentation；
Fig. 8 shows the other flow chart for illustrating operation for the method for the sedimentary origin of sputtering sedimentation.
Specific embodiment
Now with detailed reference to the various embodiments of the utility model, one or more examples of the embodiment exist
It is shown in attached drawing.In being described below of attached drawing, identical appended drawing reference indicates identical component.In general, only description is individual real
Apply the difference of mode.Each embodiment is to be provided and illustrating to the utility model, and be not meant as practical to this
Novel limitation.In addition, the feature that a part as an embodiment shows or describes can be in other embodiments
It is used in combination using or with other embodiments to generate another embodiment.Description is intended to include such modifications and variations.
Fig. 1 shows the sedimentary origin 10 for sputtering sedimentation, and the sedimentary origin includes: rotatable cathode 30；RF power cloth
Set 20；And power conveying assembly 40.RF power arrangement 20 is connect by power conveying assembly 40 with rotatable cathode 30, and
Including the first power connector 42 and second source connector 44, first power connector 42 and second source connector 44
For providing to rotatable cathode 30 at two positions (such as first position 32 and second position 34) spaced apart simultaneously
From the RF energy of RF power arrangement 20.
In embodiment as described herein, cathode has first axis end and opposite with first axis end second axially
End, wherein the first power connector is mounted at first axis end, and second source connector is mounted at the second axial end.Root
According to embodiment, RF power arrangement may include matching box (matchbox), and matching box and the first and second power connectors
At least one of between one or more electrical properties of electrical connection can become capable of adjusting.
RF power arrangement 20 is suitable for supply with the alternating current of strength.However, word " AC power " typically refers to exchange
Electricity, word " RF power " as used herein specifically refer in the frequency range of 1MHz to 300GHz, 2MHz to 1GHz
The electric current of oscillation frequency, it is another multiple of 13.56MHz, 27.12MHz or 13.56MHz that particularly relating to, which has frequency,
AC power.Word " MF " (intermediate frequency) can refer to AC power of the frequency within the scope of 1kHz to 1MHz.However, MF sputtering device is logical
Often be related to it is metal-doped to deposit nonmetallic materials, can be used RF sputtering device metal and nonmetallic materials are deposited on base
On plate.However, being sputtered for RF, generates RF power and be more difficult by RF power feed to the cathode rotated during sputtering
's.
According to some embodiments, RF power arrangement 20 may include the RF power generator for generating RF power.So
And when using RF power, in order to effectively operate, it is expected that being kept constant on power supply and preferably optimal load.It can make
With impedance matching network (especially matching box), to ensure the constant load on power supply and and by the debugging of the internal resistance of power supply be
Operate the load impedance of cathode.Therefore, in embodiment as described herein, RF power arrangement 20 may include and matching box group
The RF power generator of conjunction.The power generator can be connected to power conveying assembly by matching box, to ensure impedance
Match.In other embodiment, RF power arrangement 20 can only include matching box, and the matching box is suitable for from external RF power
Source receives RF power, for example, external RF power source itself can not be a part of RF power arrangement 20.According to can with herein
The embodiment of the other embodiments combination, when matching box is connected to the external RF power source with given electrical property
When, the matching box provides load matched.In order to provide optimal impedance matching, matching box may include for balancing purpose
Adjustable capacitor.
According to some embodiments, sputtering sedimentation source 10 includes rotatable cathode 30, and rotatable cathode 30 includes metal
And/or the target of nonmetallic materials, the metal and/or nonmetallic materials are discharged from target and are deposited on to be coated by sputtering
Substrate on.Rotatable cathode 30 can have cylindrical, and can rotate around rotation axis 31.With static plane
Target is compared, and rotatable target offers the advantage that during sputtering, target material quilt around the whole circumference of target
It reliably utilizes, and there is no the marginal portion of target in the transverse direction of target, less sputtering may in marginal portion
Occur on the target surface.Therefore, by utilizing rotatable cathode, it is possible to reduce material cost, and can become desirable for
Before replacing target, target can be used the longer time.The utilization rate of the target of plane RF cathode is usually less than 30%；For
Better numerical value may be implemented in RF rotating cathode.
In some embodiments, rotatable cathode 30 is connected to cathode holder, the cathode support by rotary shaft
Part has rotating driver, for rotating rotatable cathode 30 with given rotation speed.In some embodiments, it can revolve
Pole 30 of turning out cloudy can be configured to speed in the range of 1 to 50 rev/min, 5 to 30 revs/min or 15 to 25 revs/min
Rotation.In general, rotatable cathode 30 can be configured to about 20 revs/min of speed rotation.
According to some embodiments, sputtering sedimentation source can also include magnetron.Magnetron is magnet assembly, usually by forever
Magnet provides, to constrain plasma during sputtering sedimentation.In general, these magnets are disposed in rotatable cathode.
In some embodiments, the target of rotatable cathode 30 includes at least one electrically non-conductive material.For example, target can
To be made comprising at least one of following target material or by least one of following target material: SiO2、Al2O3、
LiPO, SiC, LiCoO, ITO, IZO or other target materials.
In some embodiments that can be combined with other embodiment as described herein, the target of rotatable cathode 30
Material includes at least one conductive material or semiconductor material.For example, target may include ITO or LiCoO or by ITO or LiCoO
It is made, and can further improve the layer characteristic of sedimentary by operating cathode with RF/DC mode.Specifically, in RF/DC mode
In, rotatable cathode may be coupled to RF power supply and DC power supply.Therefore, there is the deposition of RF energy and DC energy by providing
The sputter deposition rate of sedimentary origin can be improved in source.Specifically, can by DC sputter obtain layer characteristic can with can lead to
Cross the deposition rate combination that DC sputtering obtains.
In some embodiments, target, especially target tube, comprising at least one of Ag, Cu, titanium and Au or by
At least one of Ag, Cu, titanium and Au are made.Specifically, rotatable cathode 30 is at least partially coated at least one above-mentioned
Conductive material.Due to RF electric current in conductor penetration depth may very low (skin effect), electric current is along conductive surface stream
Dynamic, the satisfactory electrical conductivity on surface is realized by coating.For example, rotatable cathode 30 may include being made of stainless steel
Supporting element, the supporting element are coated with Ag, Cu or Au.Accordingly it is also possible to consider such as cost and the strength of materials etc..
RF power arrangement 20 is connected to rotatable cathode 30 by power conveying assembly 40, and wherein power conveying assembly 40 is suitable
In by RF power transmission to rotatable cathode 30, to be used in two positions spaced apart (such as first position 32 and the second position
34) RF current excitation (energize) rotatable cathode is sentenced.Therefore, RF electric field appropriate can be applied to positioned at rotatable
Gas between cathode 30 and opposite electrification anode, so that be ionized and be maintained at plasma can for the gas
Between rotating cathode 30 and anode.RF (PCC) power 40 has the first power connector 42, at first position 32 to can
Rotating cathode 30 feed RF electric current, and RF (PCC) power have second source connector 44, at the second position 34 to
Rotatable cathode 30 feeds RF electric current.
When only at single feed position to rotatable cathode feed RF energy when, even if target is provided at rotatable yin
On extremely, sputtering equipment can not reliably and equably utilize target material.This is because from the cathode close to single feed position
The RF electric field that area issues may be more stronger than the RF electric field issued from the cathodic region far from the feed position, thus stronger sputtering
It is likely to occur at the feed position.Specifically, it is mentioned by being arranged in a cathode holder of the proximal end of cathode
Weaker splash is subjected in the target region of the far-end of the cathode far from the cathode holder for the rotatable cathode of electric power
It penetrates.This effect causes in the sputtering sedimentation source using single power connector asymmetric target to utilize, lacks layer uniformity,
And the potential increase of material cost.
In contrast, according to embodiments disclosed herein, at least two positions spaced apart (for example, first position
32 and the second position 34) to rotatable cathode 30 feed RF energy so that from rotatable cathode 30 issue RF electric field along
Form more evenly is taken in the extension of rotatable cathode 30.Therefore, the utilization rate of target material will not be with the single feeding of distance
The increase of the distance of position and reduce, but can keep substantial constant between first position 32 and the second position 34.?
In some embodiments, sedimentary origin may include more than two power connector, in more than two position spaced apart
It sets place and the RF energy arranged from RF power is provided to rotatable cathode simultaneously.For example, in embodiments, at three or four
RF energy is fed to rotatable cathode by three or four power connectors at position spaced apart.
According to some embodiments that can be combined with other embodiment as described herein, 42 He of the first power connector
Second source connector 44 is arranged in the following manner: can be simultaneously at first position 32 and the second position 34 to rotatable
Cathode 30 feeds RF energy, and the distance between first position 32 and the second position 34 are greater than 5cm, are greater than 50cm, specifically 1m
Or it is bigger.
For wherein the first power connector 42 and second source connector 44 relative to 30 center phase of rotatable cathode
The embodiment of the sectional plane substantial symmetry arrangement of friendship, the good symmetric feeds of cathode are possible.This embodiment party
Formula is schematically shown in Fig. 1.Rotatable cathode 30 has cylindrical form, wherein the first power connector 42 is connected
It connects for by the first position 32 in the top half of RF power feed to the cylinder.In addition, rotatable cathode 30 can
With with second source connector 44, the second source connector 44 is connected for by RF power feed to cylinder
The second position 34 in lower half portion.According to the embodiment that can be combined with other embodiments as described herein, with can
First distance between the sectional plane and the first power connector 42 of the intersection of 30 center of rotating cathode and flat in the section
Second distance between face and second source connector 44 can be substantially the same.Term " substantially " as used herein can be with
Refer to that first distance and second distance are differed less than 20%, particularly less than 5%.First power connector 42 is connected with second source
Device 44 relative to rotating cathode 30 it is this be arranged symmetrically result in target material it is quite uniform and uniform utilization and allow
Extend the replacement cycle of target.
In some embodiments, rotatable cathode has cylindrical form, and has first axis end and and first axle
Second axial end opposite to end.It can be advantageously at first axis end or near first axis end and in the second axial end
Place or the second axial end nearby feed RF energy to this cylindrical rotatable cathode 30.For example, first position 32 and rotatable
First distance between the first axis end of cathode 30 can be less than the full-size of rotatable cathode 30 in the axial direction
1/10th, and might be less that can for the second distance between the second position 34 and the second axial end of rotatable cathode 30
/ 10th of the full-size of rotating cathode 30 in the axial direction.
In some embodiments, at least one of the first power connector 42 and second source connector 44 include coupling
The current-carrying part of clutch part, the coupled apparatus and rotatable cathode 30 is mechanically in electrical contact to be used for RF power feed.
For example, at least one of the first power connector 42 and second source connector 44 may include at least one brush quiet
Conducting RF current between power conveying assembly 40 and rotatable cathode 30 only, the conduction of the brush and rotatable cathode 30
Part sliding electrical contact.
According to some embodiments, at least one of the first power connector and second source connector by capacitor or
The RF energy that inductive coupling is provided to rotatable cathode is transmitted.
Fig. 2 shows the signals according to the sedimentary origin 100 for sputtering sedimentation of another embodiment as described herein
Figure.
As shown in Figure 2, according to some embodiments, RF power arrangement 20 includes the RF power hair combined with matching box 21
Raw device 22, matching box 21 provide optimum impedance matching.That is, matching box guarantees the output impedance of RF power generator 22 and electrical
The load impedance of arrangement matches, and the electrical arrangement is connected to the output terminal 25 of matching box 21.
In some embodiments, sedimentary origin 100 shown in Fig. 2 is used as a part of sputtering equipment, the sputtering equipment
Including vacuum chamber for being sputtered in vacuum chamber.The wall part 151 of vacuum chamber is shown in Fig. 2.RF power
Arrangement 20 can be arranged in the outside of vacuum chamber, and rotatable cathode 30 is arranged in the inside of vacuum chamber.Power conveying group
Part 140 is provided for matching connection box 21 and rotatable cathode 30, and the power conveying assembly 140 includes at least one vacuum
Feedthrough 152 transmits RF power with the wall part 151 for passing through vacuum chamber.
Similar to embodiment shown in FIG. 1, rotatable cathode 30 as shown in Figure 2 is with cylinder shape and can enclose
It is rotated around rotation axis 31.Rotatable cathode 30 has first axis end 132, wherein the first power connector 142 is mounted on the
At one axial end 132, and the rotatable cathode 30 has second axial end 134 opposite with first axis end 132, wherein
Second source connector 144 is mounted at the second axial end 134.It therefore, can be by the first power connector 142 from first axle
To end 132, and by second source connector 144 from the second axial end, while RF energy is supplied to rotatable cathode 30.It is this
Arrangement also leads to the good of the target material in the outer peripheral region of target and reasonable symmetrical utilization.
In some embodiments, rotatable cathode 30 by first axis end 132 and the second axial end 134 extremely
Cathode holder 136 on one few supports.In general, at least one cathode holder 136 can also include that can revolve for rotating
It turns out cloudy the device of pole 30.For example, for rotation device may include be configured for rotation rotatable cathode 30 actuator,
Driving band, power drive system or motor.In some embodiments, the first power connector 142 and second source connector
At least one of 144 are at least partly integrated in cathode holder 136.
In some embodiments, power conveying assembly 140 includes the first electrical connector 146 and the second electrical connector 148,
Matching box 21 is electrically connected by the first electrical connector 146 with the first power connector 142, and the second electrical connector 148 is by matching box 21
It is electrically connected with second source connector 144.In some embodiments, the first electrical connector 146 and the second electrical connector 148 divide
The output terminal 25 and electric contact (such as the first power connector 142 and second source connector of matching box 21 are not set
144 sheet metal contact 149) between.In some embodiments, in the first electrical connector 146 and the second electrical connector 148
At least one be provided as cable, sheet metal conductor and/or conductive rod.In order to pass through the first power connector 142 and second
Power connector 144 carries out good symmetric feeds, the first electrical property of the first electrical connector 146 and to rotatable cathode 30
Second electrical property of two electrical connectors 148 is differed less than 10%, and particularly less than 2%, it can be advantageous.Specifically, first
Second electrical property of the first electrical property of electrical connector 146 and the second electrical connector 148 is identical.
According to some embodiments that can be combined with other embodiments as described herein, the first electrical property and second is electrically
Matter refers respectively to the first impedance (impedance) of the first electrical connector 146 and the second impedance of the second electrical connector 148.Root
According to some embodiments that can be combined with other embodiment as described herein, the first electrical property and the second electrical property are respectively referred to
The second resistance of first resistor (the electric resistance) and the second electrical connector 148 of first electrical connector 146.Root
According to some embodiments, the first electrical connector 146 and the second electrical connector 148 are made of identical material, length having the same
Degree, cross section and global shape, so that their whole electrical properties are essentially identical." essentially identical " tool of term as used herein
Some meanings are as follows: the corresponding electrical property of the first electrical connector and the second electrical connector is differed less than 2%.According to embodiment,
The arrangement formed by the first electrical connector 146 interconnected and the first power connector 142, substantially by interconnected
The mirror image for the arrangement that second electrical connector 148 and the second electric connector 144 are formed, electrical property having the same.
The corresponding electrical property of first electrical connector 146 and the second electrical connector 148 causes during sputtering, from rotatable yin
The more constant and uniform removal of the target material of the 132 to the second axial end of first axis end 134 of pole 30.Therefore, at least
In some embodiments, during matching box 21 is located substantially between the first power connector 142 and second source connector 144
The heart, wherein the space length of the space length of the first electrical connector 146 and the second electrical connector 148 is identical.
Fig. 3 is shown according to the schematic of the sedimentary origin 200 for sputtering sedimentation of another embodiment described herein
Side view；And Fig. 4 shows the perspective schematic view of this embodiment.This embodiment is similar to be described above with reference to Fig. 2
Embodiment.Therefore, foregoing description is also applied for the embodiment of Fig. 3 and Fig. 4.
Property is shown as illustrated in Fig. 3 and Fig. 4, and according to some embodiments, sedimentary origin 200 includes adjusting means 226, with
For adjusting the first electrical property of the first electrical connector 246, the first electrical connector 246 is by the output terminal 25 of matching box 21 and
The connection of one power connector 142.In addition, regulating device 226 can be configured to for adjusting the second electrical connector 248
Output terminal 25 is connect by two electrical properties, the second electrical connector 248 with second source connector 144.In some embodiments
In, the first electrical property refers to the first impedance of the first electrical connector 246, and the second electrical property refers to the of the second electrical connector 248
Two impedances.
In some embodiments, the first electrical property refers to the first resistor of the first electrical connector 246, and second electrically refers to
The second resistance of second electrical connector 248.The adjusting of adjusting and the impedance of resistance is usually on the contrary, vice versa.
According to embodiment, adjusting means can be before starting sputtering operation for making the first impedance and the second impedance phase
Deng to preset the equal utilization for the target at two axial ends of rotatable cathode 30.In some embodiments,
This equilibrium of first impedance and the second impedance can be by the way that the space length of the first electrical connector 246 to be changed to and second
The space length of electrical connector 248 is equal to be arranged, or can by the way that the space length of the second electrical connector 248 to be changed to
It is with the space length of the first electrical connector 246 equal to arrange.This is because the resistance of the slender conductor between conductor both ends and
Impedance increases with the increase of the space length of conductor.
According to the embodiment that can be combined with other embodiments disclosed herein, adjusting means 226 can be used for not right
In the case that the target of title utilizes, adjusts the first impedance or adjust the second impedance.For example, in some cases, the first power supply connects
The electrical property of the electrical property and the first electrical connector 146 that connect device 142 may be slightly different, this, which may cause, sputters the period first
Asymmetric target later utilizes, such as but regardless of the corresponding electrical property of the first electrical connector 246 and the second electrical connector 248
What.Hereafter, adjusting means can be used and adjust the first impedance or the second impedance, so that passing through the sputtering operation for continuing the target
Come compensate or overcompensation described in asymmetric target utilize or layer uniformity.
According to Fig. 3 and embodiment shown in Fig. 4, adjusting means 226 is provided by the output terminal 25 of matching box 21, defeated
Terminal 25 is moveably mounted along conductive rod 249 out, and the first power connector 142 is electrically connected by the conductive rod 249 with first
Part 146 is electrically connected.In other words, the first electrical connector 246 and the second electrical connector 248 are provided by conductive rod 249, and matching box
21 output terminal 25 is installed for the sliding motion on the conductive rod 249.Therefore, the length of the first electrical connector 246
The increase of degree is along with the reduction of the length of the second electrical connector 248, and vice versa.In some embodiments, matching box 21
It is installed to serve as a whole along 249 sliding motion of conductive rod, and matching box 21 has immobilising device, such as fixture is used
In the desired locations being fixed on output terminal 25 together with matching box 21 in the length along conductive rod 249.
As shown in figure 4, first power supply connects according to some embodiments that can be combined with other embodiments as described herein
It connects device 142 and second source connector 144 is respectively at least partially integrated in cathode holder 136 and 236, to be used for
Rotatable cathode 30 is kept and supported at two axial ends.At least one of cathode holder 136,236, is specifically erected
The upward upper cathode holder 236 of histogram, has positioning devices 250, with for relative to rotatable cathode by cathode holder
236 are moved to installation site from operating position, and the operating position is used for sputtering operation, and the installation site is for dismantling and can revolve
It turns out cloudy pole and/or for dismantling magnetic yoke, the magnetic yoke may be at least partially disposed in rotatable cathode 30.In some implementations
In mode, cathode holder 236 at least partly covers the upper axial end of rotatable cathode 30, and the first power connector 142
A part and/or cathode support 236 rotary drive a part at operating position with cylindrical rotatable cathode
30 axial engagements.After cathode holder 236 is in axial direction moved away from rotatable cathode 30, cathode holder 236
No longer with 30 axial engagement of rotatable cathode, so as to remove rotatable cathode 30 with for safeguarding or replace.Some
In embodiment, moveable cathode holder is provided by moveable sealing element, and the moveable sealing element seals power supply
At least one of connector (for example, the first power connector 142 and second source connector 144).
Fig. 5 shows the signal of the sedimentary origin 300 for sputtering sedimentation according to another embodiment as described herein
Figure.This embodiment is similar to the embodiment described above with reference to Fig. 3 and Fig. 4.Therefore, foregoing description is also applied for Fig. 5's
Embodiment.
As shown in figure 5, the first power connector 342 is mounted at the first axis end 332 of rotatable cathode 30, with
It is transmitted in the RF energy for providing rotatable cathode by the capacitive coupling at first position, and second source connector
344 are mounted at second axial end 334 opposite with first axis end 332 of rotatable cathode 30, for by second
Capacitive coupling at position is transmitted to provide the RF energy of rotatable cathode.
In the following description, it will only be described in detail the first axis of the first power connector 342 and rotatable cathode 30
End 332；However, in some embodiments, the second axial end 334 of second source connector 344 and rotatable cathode can be with
With corresponding layout.
According to some embodiments, the first power connector 342 includes the first coupling element 382, and rotatable cathode 30
First axis end 332 include the second coupling element 384, the second coupling element 384 is relative to the first coupling element 382 with certain
Distance arrangement is for limiting capacitor.According to some embodiments, capacitor in the range of 1pF to 5000pF, 10pF extremely
It in the range of 400pF to 600pF, or is specifically about in the range of 100pF to 1000pF in the range of 2000pF
500pF.Therefore, the first power connector 342 allows RF power transmission to rotatable cathode 30 through capacitive coupling.
First coupling element 382 and the second coupling element 384 can be arranged, so that when relative to the first coupling element
382 when rotating the second coupling element 384 around rotation axis 31, and the capacitor keeps of substantially equal.As an example, the first coupling
Element 382 and the second coupling element 384 can relative to 31 rotational symmetry of rotary shaft, and they can particularly have with
Give set a distance panel element and/or cylindrical elements relative to each other.In some embodiments, the first coupling element 382 is
One hollow cylindrical element and the second coupling element 384 are the second hollow cylindrical elements, one of hollow cylindrical member
Part has coaxially to be engaged than another hollow cylindrical element smaller diameter, and with another described hollow cylindrical element.
The distance between first coupling element 382 and the second coupling element 384 can use dielectric (such as gas or sky
Gas) or vacuum filling.
In embodiments, at least one of first and second power connectors are suitable for through inductive coupling or via connecing
RF energy is transferred to rotatable cathode by tentaculum part (such as brush).
Fig. 6 shows the schematic diagram of the sputtering equipment 400 according to implementations described herein.Sputtering equipment 400 includes
According to the vacuum chamber 410 and sedimentary origin 420 of any embodiment as described herein.In the illustrated embodiment, sedimentary origin 420
Four corresponding anodes 430 including four rotatable cathodes 30 and towards the cathode, 430 cloth of rotatable cathode 30 and anode
It sets in the inside of vacuum chamber 410.More than four rotatable cathodes can be provided.
RF power device 20 for supplying RF power is arranged in the outside of vacuum chamber 410, and passes through corresponding electricity
Connector and power connector are electrically connected to rotatable cathode 30 and anode 430.According to can be with other embodiment party as described herein
The embodiment of the sputtering equipment of formula combination, the shell of vacuum chamber may be electrically connected to RF power arrangement 20.Therefore, vacuum chamber
The shell of room may be used as the corresponding anode of rotatable cathode.As shown in Figure 6, each rotatable cathode 30 and the first power supply
Connector 442 and second source connector 444 are associated, at two positions spaced apart to corresponding rotatable cathode 30
RF energy from RF power arrangement 20 is provided.As shown in Figure 6, each rotatable cathode 30 may be coupled to DC power supply 125,
To provide DC energy to rotatable cathode.In addition, illustratively referring to Fig. 6, according to can be with other embodiment party as described herein
The embodiment of the sputtering equipment of formula combination, for each power arrangement 20 to corresponding rotatable cathode 30 supply RF power
It may be coupled to electric arc synchronous device 170, to synchronize the RF power for being supplied to respective cathode.
As shown in fig. 6, other chamber 411 can be arranged near vacuum chamber 410.Vacuum chamber 410 can be distinguished
It is separated by valve with adjacent chamber, the valve has valve chest 404 and valve cell 405.
Therefore, after the carrier 406 with the substrate 407 to be coated is inserted into vacuum chamber 410, as illustrated with arrow 401,
Valve cell 405 can be closed.Therefore, the atmosphere in vacuum chamber 410 can be independently controlled (example by generation technology vacuum
As used the vacuum pump for being connected to vacuum chamber 410 to carry out generation technology vacuum), and/or by the way that processing gas is inserted into vacuum chamber
It is independently controlled in the deposition region of room 410.
According to typical embodiment, processing gas may include inert gas (such as argon gas) and/or reaction gas (such as oxygen
Gas, nitrogen, hydrogen and ammonia, ozone, active gases and similar gas).
In order to have the carrier 406 of substrate 407 to be transferred into and leave vacuum chamber 410, set in vacuum chamber 410
It is equipped with roller 408.Term " substrate " as used herein should include that non-flexible substrate (such as cut by glass substrate, chip, transparent crystal
Both piece (such as sapphire) and similar substrate) and flexible base board (such as web or foil).
Fig. 6 shows the rotatable cathode 30 with the magnet assembly or magnetron 431 being arranged in rotatable cathode 30,
Wherein magnetron 431 can be respectively arranged in backing pipe, and the backing tube body is on the outer surface equipped with target material.
First power connector 442 associated with each rotatable cathode 30 and/or second source connector 444
Details can understand from one in previously described embodiment, or by combine any previously described embodiment come
Understand, therefore details are not described herein.
Fig. 7 shows the flow chart for illustrating operation for the method for the sedimentary origin of sputtering sedimentation.It can be by aforementioned reality
Any one of mode is applied as will be according to the sedimentary origin of method of operation in operation.
As shown in fig. 7, the method includes same in first position and the second place being spaced apart with the first position
When to rotatable cathode feed RF energy, such as the first frame 702 is illustrative shows.RF energy can arrange acquisition from RF power, and
And rotatable target can be supplied to by power conveying assembly, the power conveying assembly includes that two power supplys spaced apart connect
Connect device.Therefore, plasma can be excited to sputter the target region of rotating cathode.Therefore, target material can be from target area
Domain discharges and is deposited on substrate to be coated.
Fig. 8 shows the other flow chart for illustrating operation for the method for the sedimentary origin of sputtering sedimentation.
As shown in Figure 8, which comprises adjust the first electrical property of the first electrical connector, first electrical connector
RF energy is supplied to first position from the third place, and/or adjusts the second electrical property of the second electrical connector, second electricity
RF energy is supplied to the second position from the third place by connector, and such as the second frame 802 is illustrative shows.First electrical connector is by cloth
The output terminal for setting the matching box at the third place is connect with the first power connector, and first power connector is first
RF energy is fed to rotatable cathode at position.Similarly, the second electrical connector is electric by the output terminal of matching box and second
RF energy is fed to rotatable cathode in the second place by source connector connection, the second source connector.In some realities
It applies in mode, the first electrical property is the first impedance and/or first resistor of the first electrical connector, and the second electrical property is second to be electrically connected
Second impedance of fitting and/or second resistance.
According to some embodiments, adjusted by changing the space length of the first electrical connector and/or the second electrical connector
Save the first electrical property and/or the second electrical property.Specifically, thus it is possible to vary the length of the first electrical connector and the second electrical connector
Ratio between length.In some embodiments, the ratio can be adjusted to become substantially 1 or exactly 1.Such as
It is used herein " substantially " cover 0.98 to 1.02 rate value.The symmetrical feedback to rotating cathode is typically resulted in for 1 ratio
Electricity, so as to cause the utilization of uniform target.In other embodiments, the ratio can be adjusted to become greater than or be less than
1, to compensate the first power connector and/or second source company are used and/or compensated to the asymmetric of the target used
Connect the unequal electrical property of device.
After adjustment, it is shown as the second frame 802 in Fig. 8 is illustrative, passes through first at two positions spaced apart
Electrical connector and the second electrical connector feed RF energy to be used for sputtering operation, such as the third frame 804 in Fig. 8 to rotatable cathode
Illustrated property is shown.
Although foregoing teachings are related to the embodiments of the present invention, the basic of the utility model can not departed from
In the case where range, other and further embodiment of the utility model are designed, and the scope of the utility model is by institute
Attached claims determine.
Claims (19)
1. a kind of sedimentary origin (10,100,200,300,420) for sputtering sedimentation, which is characterized in that the sedimentary origin includes:
At least one rotatable cathode (30)；
RF power arranges (20)；And
The RF power is arranged and is connect with the rotatable cathode, wherein the power is defeated by power conveying assembly (40,140)
Sending component include the first power connector (42,142,342,442) and second source connector (44,144,344,444), with
In the RF energy arranged simultaneously to rotatable cathode offer from the RF power at two positions (32,34) spaced apart
Amount, wherein RF power arrangement includes matching box (21), wherein the power conveying assembly includes:
First electrical connector (146,246), connects the matching box and first power connector；And
Second electrical connector (148,248), connects the matching box and the second source connector,
Wherein the matching box (21) includes output terminal (25), and the output terminal is along first electrical connector (246)
It is moveably mounted at least one of second electrical connector (248).
2. sedimentary origin according to claim 1, wherein first power connector (42,142,342) and described second
Power connector (44,144,344) relative to the sectional plane intersected with the rotatable cathode (30) center essentially symmetrically
Arrangement.
3. sedimentary origin according to claim 1 has first wherein the rotatable cathode (30) has cylindrical form
Axial end (132,332) and second axial end portion opposite with the first axis end (134,334), and wherein described first
Power connector (142,342) is mounted at the first axis end, and the second source connector (144,344) is mounted on
At second axial end.
4. sedimentary origin according to claim 2 has first wherein the rotatable cathode (30) has cylindrical form
Axial end (132,332) and second axial end portion opposite with the first axis end (134,334), and wherein described first
Power connector (142,342) is mounted at the first axis end, and the second source connector (144,344) is mounted on
At second axial end.
5. sedimentary origin according to claim 1, wherein first power connector (342) is connected with the second source
At least one of device (344) is passed by the RF energy that capacitive coupling or inductive coupling are provided to the rotatable cathode (30)
It is defeated.
6. sedimentary origin according to claim 2, wherein first power connector (342) is connected with the second source
At least one of device (344) is passed by the RF energy that capacitive coupling or inductive coupling are provided to the rotatable cathode (30)
It is defeated.
7. sedimentary origin according to claim 3, wherein first power connector (342) is connected with the second source
At least one of device (344) is passed by the RF energy that capacitive coupling or inductive coupling are provided to the rotatable cathode (30)
It is defeated.
8. sedimentary origin according to claim 4, wherein first power connector (342) is connected with the second source
At least one of device (344) is passed by the RF energy that capacitive coupling or inductive coupling are provided to the rotatable cathode (30)
It is defeated.
9. sedimentary origin according to claim 1, wherein the first impedance of first electrical connector and described second is electrically connected
Second impedance of fitting is differed less than 10%.
10. sedimentary origin according to claim 9, wherein first impedance and second impedance are essentially identical.
11. sedimentary origin according to claim 1, wherein the first resistor of first electrical connector and described second is electrically connected
The second resistance of fitting is differed less than 10%.
12. sedimentary origin according to claim 11, wherein the first resistor and the second resistance are essentially identical.
13. sedimentary origin according to claim 1, including regulating device (226) is for adjusting first electrical connector
The first electrical property and/or second electrical connector the second electrical property.
14. sedimentary origin according to claim 13, wherein the regulating device (226) is by changing first electrical connection
The length of part and/or second electrical connector adjusts the first electrical property and/or described second of first electrical connector
Second electrical property of electrical connector.
15. sedimentary origin according to claim 1, wherein first electrical connector and second electrical connector are by conduction
Stick (249) provides, and the conductive rod is connected to first power connector (142) and the second source connector (144)
Between, the matching box (21) is installed to move on the conductive rod.
16. according to claim 1 to sedimentary origin described in any one of 15, wherein first power connector and described second
At least one of power connector include cathode holder (236), the cathode holder (236) can relative to it is described can
Rotating cathode (30) is moved to the installation site for dismantling the rotatable cathode from the operating position for sputtering operation.
17. sedimentary origin according to claim 16, wherein the cathode holder (236) is far from the rotatable cathode
(30) it can be moved on axial direction.
18. a kind of sputtering equipment (400), which is characterized in that the sputtering equipment includes:
Vacuum chamber (410)；And
According to claim 1 to sedimentary origin described in any one of 14 (420), wherein the rotatable cathode (30) is positioned at described
The inside of vacuum chamber (410),
Wherein at least one of first power connector and the second source connector include feedthrough (152), with
It is transferred in the vacuum chamber in by the RF energy arranged from the RF power.
19. sputtering equipment according to claim 18, wherein the feedthrough (152) is vacuum rotating feedthrough.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2015/060228 WO2016180443A1 (en) | 2015-05-08 | 2015-05-08 | Radio frequency (rf) - sputter deposition source, deposition apparatus and method of operating thereof |
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| KR (1) | KR101956722B1 (en) |
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| KR20200011295A (en) | 2018-07-24 | 2020-02-03 | 주식회사 선익시스템 | Deposition Equipment Including Means of Restraining Arc |
| KR102067820B1 (en) | 2018-07-24 | 2020-01-17 | (주)선익시스템 | Deposition Equipment Including Means Having Variable Formation for Restraining Arc |
| KR102149656B1 (en) | 2018-08-10 | 2020-08-31 | 주식회사 선익시스템 | Deposition Equipment Including Means Having Covering Formation for Restraining Arc |
| CN112323036B (en) * | 2020-11-03 | 2022-10-21 | 北京北方华创微电子装备有限公司 | Power feed-in mechanism, rotating base device and semiconductor processing equipment |
| DE102023116093A1 (en) * | 2023-06-20 | 2024-12-24 | VON ARDENNE Asset GmbH & Co. KG | Coating device and a method for operating a coating device |
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| DE102011086111B4 (en) * | 2011-11-10 | 2016-03-17 | Fhr Anlagenbau Gmbh | Arrangement for feeding HF current for tube cathodes |
| US9281436B2 (en) * | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
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