CN208706613U - Semiconductor crystal wafer processing equipment and its push pin device - Google Patents

Abstract

The utility model discloses a kind of semiconductor crystal wafer processing equipment and its push pin device, is related to technical field of manufacturing semiconductors.Semiconductor reaction chamber wafer push pin device, comprising: thimble channel；Thimble, in the thimble channel, the peripheral surface of the thimble includes the first annular region and second annular region adjacent with the first annular region positioned at the thimble top, wherein the electric conductivity of the first annular region and second annular region is opposite；Conduct piece positioned at thimble channel inner sidewall and is connected to the peripheral surface of the thimble.Pass through the embodiments of the present invention, only conductive in first annular region and the second annular region one is needed to apply voltage difference between region and conduct piece, and detect whether conduct whether the top that can judge thimble is entirely retracted in thimble channel between the region and conduct piece, thus judge whether thimble falls into place.

Description

Semiconductor crystal wafer processing equipment and its push pin device

Technical field

The utility model relates generally to technical field of manufacturing semiconductors, in particular to a kind of semiconductor crystal wafer Processing equipment and its push pin device.

Background technique

In semiconductor production processing technology, it is often necessary to wafer is transported in reaction chamber and processed.The reaction chamber It can be the reaction chamber of photoresist equipment.

Wafer is transported to heating the substrate in reaction chamber for convenience of mechanical arm, is additionally provided in reaction chamber and runs through vertically The more thimbles heated the substrate.Step in wafer transfer to reaction chamber are as follows: thimble, which rises to top and is higher than, to be heated the substrate, mechanical Fupport arm wafer and wafer is placed on to the top of thimble；Then, mechanical arm retracts, and thimble drops to bottom surface and the heating of wafer The upper surface of substrate is affixed completely.

In practice, thimble occasional is declined by less than position and to heat the substrate between wafer that there are gaps, can lead in this way Cause heats the substrate in follow-up process technique unevenly causes final products bad wafer heating with heating insufficient.

Above- mentioned information are only used for reinforcing the understanding to the background of the utility model disclosed in the background technology part, because This it may include the information not constituted to the prior art known to persons of ordinary skill in the art.

Utility model content

A series of concept of reduced forms is introduced in utility model content part, this will be in specific embodiment part Middle further description.The content of the present invention part is not meant to attempt to limit technical solution claimed Key feature and essential features, do not mean that the protection scope for attempting to determine technical solution claimed more.

Whether a technical problem to be solved in the utility model is how to detect the top of thimble to fall into place.

One main purpose of the utility model is to overcome at least one defect of the above-mentioned prior art, provides a kind of half Conductor reaction chamber wafer push pin device comprising: thimble channel；Thimble is located in the thimble channel, the periphery of the thimble Surface includes the first annular region and second annular region adjacent with the first annular region positioned at the thimble top, Wherein, the electric conductivity of the first annular region and second annular region is opposite；Conduct piece is located in the thimble channel Side wall and the peripheral surface for being connected to the thimble.

One embodiment according to the present utility model, the first annular region are insulation layer, second annular region For conduction region.

One embodiment according to the present utility model, the first annular region are conduction region, second annular region For insulation layer.

One embodiment according to the present utility model further includes detection unit, and the detection unit is electrically connected the conduction Area and the conduct piece.

One embodiment according to the present utility model, the detection unit include power supply, resistance and voltage sensor；It is described Power supply is connected with the conduct piece, for applying voltage on the conduct piece；The resistance and the conduct piece or with it is described The conduction region of thimble is connected；The voltage sensor is parallel to the resistance both ends, for detecting the voltage at the resistance both ends, Or the voltage sensor is parallel to the conduction region and the conduct piece both ends, for detecting the conduction region and the conduction Voltage between part.

One embodiment according to the present utility model, the detection unit include power supply, resistance and current sensor；It is described Power supply is connected with the conduct piece, for applying voltage on the conduct piece；The resistance and the conduct piece or with it is described The conduction region of thimble is connected；The current sensor is connected with the resistance, for detecting the size of current by the resistance.

One embodiment according to the present utility model, the conduct piece are roller ring, and the roller ring is installed on the top In the inner sidewall of needle passageway.

One embodiment according to the present utility model, the cross section of the thimble be it is round, rectangular or with it is described Roller ring protrudes from the corresponding recess in thimble vias inner walls part.

One embodiment according to the present utility model, the thimble are made of metal, and the insulation layer on the thimble is plating Insulating layer on the thimble.

One embodiment according to the present utility model, the thimble include the thimble of three or more non-linear configurations, and The thimble channel corresponding with each thimble；And/or

The semiconductor reaction chamber wafer push pin device further includes the pedestal for fixing the push pin device.

The utility model also proposed a kind of semiconductor crystal wafer processing equipment comprising: reaction cavity；And it is located at described The push pin device of reaction cavity.

As shown from the above technical solution, effect the advantages of the semiconductor reaction chamber wafer push pin device of the utility model and actively Fruit is: since the top of thimble is arranged in first annular region, and conduct piece is arranged in thimble channel, only when thimble Conduct piece could be in contact with the first annular region on thimble when top is entirely retracted into thimble channel.At this moment, it is only necessary to Conductive one applies voltage difference in first annular region and the second annular region between region and conduct piece, and detects the area Whether can judge whether the top of thimble be entirely retracted to thimble channel in, thus judge if being conducted between domain and conduct piece Whether thimble falls into place out.

Detailed description of the invention

Consider the detailed description of the following preferred embodiment to the utility model in conjunction with the accompanying drawings, the utility model it is each Kind target, feature and advantage will become apparent.Attached drawing is only the exemplary diagram of the utility model, is not necessarily It is drawn to scale.In the accompanying drawings, same appended drawing reference always shows same or similar component.Wherein:

Fig. 1 is schematic cross-sectional view of a kind of push pin device under thimble stretching state shown according to embodiment one；

Fig. 2 is a kind of schematic front view of thimble shown according to embodiment one；

Fig. 3 is schematic cross-sectional view of a kind of push pin device under thimble retraction state shown according to embodiment one；

Fig. 4 is a kind of schematic top plan view of conduct piece shown according to embodiment one；

Fig. 5 is a kind of schematic top plan view of push pin device shown according to embodiment one；

Fig. 6 is a kind of schematic front view of thimble shown according to embodiment two；

Fig. 7 is schematic cross-sectional view of a kind of push pin device under thimble retraction state shown according to embodiment two；

Fig. 8 is a kind of main view complete section schematic diagram of thimble shown according to embodiment three；

Fig. 9 is the schematic cross-sectional view according to a kind of push pin device shown in example IV under thimble retraction state；

Figure 10 is the schematic top plan view that a kind of thimble shown according to embodiment five is matched with conduct piece；

Figure 11 is the schematic top plan view that a kind of thimble shown according to embodiment five is matched with conduct piece；

Figure 12 is a kind of schematic top plan view of push pin device shown according to embodiment six；

Figure 13 is schematic front view of a kind of push pin device in the state of carrying wafer shown according to embodiment six.

Specific embodiment

Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, thesing embodiments are provided so that this is practical new Type will be full and complete, and the design of example embodiment is comprehensively communicated to those skilled in the art.It is identical in figure Appended drawing reference indicates same or similar structure, thus the detailed description that will omit them.

Embodiment one

Referring to Fig.1, Fig. 1 shows one of the present embodiment semiconductor reaction chamber wafer push pin device 1.Semiconductor crystal wafer Processing equipment includes the semiconductor reaction chamber wafer push pin device 1 and reaction cavity.The reaction cavity can be photoresist and set Standby reaction cavity.Semiconductor reaction chamber wafer push pin device 1 is mounted in reaction cavity.Semiconductor reaction chamber wafer thimble dress Setting 1 includes pedestal 13, thimble 11, conduct piece 12 and detection unit 16.

Pedestal 13, which can be, to be heated the substrate.Be provided with thimble channel 131 on pedestal 13, thimble channel 131 along linear extension, Thimble channel 131 can be to be extended in vertical direction.The cross section in thimble channel 131 is preferably circular.

Thimble 11 is straight-bar extending in a straight line.The cross section of thimble 11 is preferably circular.It is logical that thimble 11 is inserted into thimble In road 131, thimble 11 can pump in thimble channel 131 along thimble channel 131.

Referring to Fig. 2, the peripheral surface of thimble 11 includes first annular region 111 and the second annular region 112, first annular Region 111 and the second annular region 112 are in a ring.The top of thimble 11 is arranged in first annular region 111.First annular area Domain 111 and the second annular region 112 are adjacent along the vertical direction.The electric conductivity in first annular region 111 and the second annular region 112 On the contrary.

In the present embodiment, first annular region 111 is insulation layer, and the second annular region 112 is conduction region.Thimble 11 by Metal is made, and can be and is made of copper, iron, aluminium and its alloy.The peripheral surface of the tip portion of thimble 11 is coated with one layer absolutely Edge layer, the insulating layer are ring-type.The surface of insulating layer is insulation layer, the portion that the peripheral surface of thimble is not covered by insulating layer Dividing is conduction region.Insulating layer is plated on thimble 11, simple process is easy to make.The material of insulating layer is preferably silica Or silicon nitride, silica and insulating silicon nitride are good, and it is wear-resistant, and in conjunction with closer between thimble 11.

Referring to Fig. 3, conduct piece 12 is conductor, can be made of metal.Conduct piece 12 is arranged in thimble channel 131 On side wall.Mutually insulated between conduct piece 12 and pedestal 13.Conduct piece 12 and the peripheral surface of thimble 11 offset.Thimble 11 is upper When lower reciprocating motion, thimble 11 is slided relative to conduct piece 12, and conduct piece 12 can switch ground and abut in conduction region and insulation layer One.

Detection unit 16 is in contact for detecting conduct piece 12 with which of conduction region and insulation layer.Detection unit 16 Including power supply 14, resistance 15 and voltage sensor 17.Conduction region, resistance 15, power supply 14 and conduct piece 12 are cascaded.Power supply 14 can be voltage source, preferably constant pressure source.Power supply 14 is connected with conduct piece 12, for applying voltage on conduct piece 12.Electricity Resistance 15 is connected with conduct piece 12 or with the conduction region of thimble 11.Voltage sensor 17 is parallel to the both ends of resistance 15, for detecting The voltage or voltage sensor at 15 both ends of resistance are parallel to the both ends of conduction region Yu conduct piece 12, for detecting conduction region and leading Voltage between electric part 12.

If the voltage at 17 detection resistance of voltage sensor, 15 both ends, show that circuit is disconnected when the voltage at 15 both ends of resistance is zero It opens, conduct piece 12 is in contact with insulation layer；Show when the voltage at 15 both ends of resistance is not zero circuit connect, conduct piece 12 with lead Electric area is in contact.

If voltage sensor 17 detects the voltage between conduction region and conduct piece 12, since conduction region and conduct piece are to lead Body, the voltage when the two contacts with each other between the two are zero, therefore then show conduct piece 12 when the voltage measured is zero and lead Electric area is in contact, and then shows that conduct piece 12 is in contact with insulation layer when the voltage measured is not zero.

Referring to Fig. 3, since the top of thimble 11 is arranged in first annular region 111, and the setting of conduct piece 12 is logical in thimble In road 131, only when the top of thimble 11 is entirely retracted in thimble channel 131, conduct piece 12 could be on thimble 11 One annular region 111 is in contact.When voltage sensor 17 in detection unit 16 detects that the voltage at 15 both ends of resistance is zero, table Bright conduct piece 12 is in contact with first annular region 111 (i.e. insulation layer), then means that the top of thimble 11 has been retracted into thimble In channel 131；When voltage sensor 17 in detection unit 16 detects that the voltage at 15 both ends of resistance is not zero, show conduct piece 12 are in contact with the second annular region 112 (i.e. conduction region), then mean that the top of thimble 11 has not been retracted into thimble channel In 131.Thus, it is possible to judge whether the top of thimble 11 is retracted into thimble channel 131 by detection unit 16.It is processing When wafer, the top of thimble 11, which needs to be retracted into thimble channel 131 but the not state of retraction, can be tested in order to tieing up Personnel's on-call maintenance is repaired, loss is avoided to expand.

Preferably, an electrode of power supply 14 is connected to conduct piece 12, another electrode of power supply 14 is for being grounded.Example Such as, the anode of power supply 14 is connected to conduct piece 12, and the cathode of power supply 14 is for being grounded.One end of resistance 15 is connected to conduction region, The other end of resistance 15 is for being grounded.In this way be arranged after power supply 14 can be connected with resistance 15 by ground, save conducting wire and It is safer.

Preferably, referring to Fig. 4, conduct piece 12 is roller ring.Roller ring is installed in the inner sidewall in thimble channel 131.Rolling Torus includes wheel carrier 121 and multiple idler wheels 122.Wheel carrier 121 and idler wheel 122 are conductor, and wheel carrier 121 is configured to ring-type, preferably For circular ring shape.Idler wheel 122 is circle, and the middle part of idler wheel 122 is provided with axis hole, wheel carrier 121 through idler wheel 122 axis hole so that Idler wheel 122 is mounted on wheel carrier 121.Idler wheel 122 can be rolled around own axes.Multiple idler wheels 122 are uniformly arranged in wheel carrier 121 On.Wheel carrier 121 is electrically connected detection unit 16 by conducting wire.

Referring to Fig. 5, for idler wheel ring set on thimble 11, the idler wheel 122 in roller ring is connected to the peripheral surface of thimble 11. When thimble 11 slides up and down, the idler wheel in roller ring is rolled, and rolling friction is formed between thimble 11 and roller ring, and thimble 11 slides When the resistance that is subject to it is smaller.

Embodiment two

The semiconductor reaction chamber wafer in semiconductor reaction chamber wafer push pin device 1a and embodiment one in embodiment two The structure that the difference of push pin device 1 essentially consists in thimble is not identical, for the sake of brief, both only describes in embodiment two below no Same part.

Referring to Fig. 6, the peripheral surface of thimble 11a includes first annular region 111a and the second annular region 112a, and first Annular region 111a and the second annular region 112a are in a ring.The top of thimble 11a is arranged in first annular region 111a.The One annular region 111a and the second annular region 112a are adjacent along the vertical direction.

First annular region 111a is conduction region, and the second annular region 112a is insulation layer.Thimble 11a is made of metal, It can be using copper, iron, aluminium and its alloy production.The peripheral surface of thimble 11a is coated with one layer absolutely other than tip portion Edge layer, the insulating layer are ring-type.The material of insulating layer is silica or silicon nitride.The surface of insulating layer is insulation layer, top The part that the peripheral surface of needle 11a is not covered by insulating layer is conduction region.

Detection unit 16 is in contact for detecting conduct piece 12 with which of conduction region and insulation layer.

Referring to Fig. 7, since the top of thimble 11a is arranged in first annular region 111a, and conduct piece 12 is arranged in thimble In channel 131, only when the top of thimble 11a is entirely retracted in thimble channel 131 conduct piece 12 could on thimble 11a First annular region 111a be in contact.Voltage sensor 17 in detection unit 16 detects that the voltage at 15 both ends of resistance is not When zero, shows that conduct piece 12 is in contact with first annular region 111a (i.e. conduction region), then mean the top retraction of thimble 11a It has arrived in thimble channel 131；When voltage sensor 17 in detection unit 16 detects that the voltage at 15 both ends of resistance is zero, show Conduct piece 12 is in contact with the second annular region 112a (i.e. insulation layer), then means that the top of thimble 11a is not retracted into In thimble channel 131.Thus, it is possible to judge whether the top of thimble 11a is retracted into thimble channel 131 by detection unit 16 It is interior.When processing wafer, the top of thimble 11a needs to be retracted into thimble channel 131 that but the state of retraction can be tested It is able to personnel's on-call maintenance easy to repair, loss is avoided to expand.

Embodiment three

The semiconductor reaction chamber wafer top in semiconductor reaction chamber wafer push pin device and embodiment one in embodiment three The structure that the difference of needle device 1 essentially consists in thimble is not identical, and for the sake of brief, it is different only to describe the two in embodiment three below Part.

Referring to Fig. 8, thimble 11b includes metallic rod 113b and insulating disc 114b.Insulating disc 114b can be using ceramics etc. Insulating materials production.Metallic rod 113b is made of metal material.The top of metallic rod 113b is arranged in insulating disc 114b.Insulation It is fixedly connected between disk 114b and metallic rod 113b.Cylinder can be set into metallic rod 113b, and insulating disc 114b can be set At the cylinder or patty coaxial with metallic rod 113b, the outer diameter of insulating disc 114b is identical as the outer diameter of metallic rod 113b.

The peripheral surface of thimble 11b includes first annular region 111b and the second annular region 112b, insulating disc 114b's Peripheral surface is first annular region 111b, and the peripheral surface of metallic rod 113b is the second annular region 112b.This thimble 11b Structure it is simple, it is easily fabricated.

Example IV

The semiconductor reaction chamber wafer in semiconductor reaction chamber wafer push pin device 1c and embodiment one in example IV The structure that the difference of push pin device 1 essentially consists in detection unit is not identical, for the sake of brief, is only described two in example IV below The different part of person.

As shown in figure 9, detection unit 16c includes power supply 14c, resistance 15c and current sensor 17c.Conduction region, electric current pass Sensor 17c, resistance 15c, power supply 14c and conduct piece 12 are cascaded.Power supply 14c can be voltage source, preferably constant pressure source. Power supply 14c is connected with conduct piece 12, for applying voltage on conduct piece 12.Resistance 15c and conduct piece 12 or with thimble 11 Conduction region series connection.Current sensor 17c connects with resistance 15c, for detecting the electric current for passing through resistance 15c.Work as current sensor 17c, which is detected, then shows that insulation layer is in contact with conduct piece 12 when electric current is zero；It is when current sensor 17c detects electric current not When zero, then show that conduction region is in contact with conduct piece 12.

Since the top of thimble 11 is arranged in first annular region 111, and conduct piece 12 is arranged in thimble channel 131, Only when the top of thimble 11 is entirely retracted in thimble channel 131, conduct piece 12 could be with the first annular area on thimble 11 Domain 111 is in contact.When current sensor 17c in detection unit 16c detects that electric current is zero, show conduct piece 12 and the first ring Shape region 111 (i.e. insulation layer) is in contact, then means that the top of thimble 11 has been retracted into thimble channel 131；Detection unit When current sensor 17c in 16c detects that electric current is not zero, show that conduct piece 12 and the second annular region 112 are (i.e. conductive Area) it is in contact, then mean that the top of thimble 11 has not been retracted into thimble channel 131.Thus, it is possible to pass through detection unit 16c judges whether the top of thimble 11 is retracted into thimble channel 131.

Embodiment five

The semiconductor reaction chamber wafer top in semiconductor reaction chamber wafer push pin device and embodiment one in embodiment five The difference of needle device 1 essentially consists in thimble and the structure of conduct piece is not identical, for the sake of brief, only describes in embodiment five below The different part of the two.

As shown in Figure 10, squarely is arranged in the cross section of thimble 11d, can be square, is also possible to rectangle.It is conductive Part 12d is roller ring.Roller ring is installed in the inner sidewall in thimble channel 131.Roller ring includes wheel carrier 121d and four rolling 122d.Wheel carrier 121d and idler wheel 122d is conductor.Wheel carrier 121d is configured to square frame-shaped.Idler wheel 122d is circle, idler wheel 122d Middle part be provided with axis hole, wheel carrier 121d through idler wheel 122d axis hole so that idler wheel 122d is mounted on wheel carrier 121d.Rolling Wheel 122d can be rolled around own axes.Four rolling 122d is separately mounted on the four edges of wheel carrier 121d.Wheel carrier 121d passes through Conducting wire is electrically connected detection unit 16.

For idler wheel ring set on thimble 11d, the four rolling 122d in roller ring is connected to four sides of thimble 11d respectively Face.When thimble 11d is slided up and down, the idler wheel in roller ring is rolled, and rolling friction, thimble are formed between thimble 11d and roller ring The resistance that 11d is subject to when sliding is smaller.Especially, squarely is arranged in the cross section of thimble 11d, and roller ring is also provided with into box Shape, thimble 11d and roller ring cooperation are even closer, thimble 11d cannot around own axis, thimble 11d in sliding more Steadily.

Preferably, as shown in figure 11, recess 115d is additionally provided in the peripheral surface of thimble 11d.The 115d that is recessed is along top The groove that the length direction of needle 11d extends.It is recessed there are four 115d settings, four recess 115d are separately positioned on four of thimble On side.The four rolling 122d of roller ring protrudes from thimble vias inner walls, and is respectively protruding into four recess 115d.

It is recessed in 115d since roller ring protrudes from partially protruding into for 131 inner wall of thimble channel, thimble channel 131 and top Gap between needle 11d can be set enough to it is small, such pollutant is difficult to by between thimble channel 131 and thimble 11d Gap enter in thimble channel 131.

Embodiment six

In the present embodiment, the thimble channel 131f on referring to Fig.1 2,13, pedestal 13f is at least arranged 3.Thimble 11f is extremely 3 are arranged less.The quantity of thimble 11f is identical as the quantity of thimble channel 131f, and thimble channel 131f and thimble 11f are corresponded Setting, every thimble 11f are inserted into thimble channel 131f corresponding thereto.More thimble 11f do not form straight line arrangement.

In this way, since 3 and the arrangement that do not form straight line, thimble 11f energy when supporting wafer 100 is at least arranged in thimble 11f Steadily hold wafer 100.

Preferably, thimble 11f is provided with three, and the distance between every two thimble 11f are equal.In this way, thimble 11f is in energy Quantity is also as few as possible while stablizing support wafer 100, and the weight of each thimble 11f carrying wafer 100 is consistent, thimble 11f stress is more reasonable.

It should be understood that multiple examples described above can along multiple directions (such as inclination, reverse, horizontal, vertical, etc.) and It is utilized with multiple constructions, without departing from the principles of the present invention.Embodiment shown in the accompanying drawings is only used as the utility model Principle the example effectively applied and be shown and described, the utility model is not limited to these examples any specific Details.

Certainly, once thinking over the above description of representative embodiment, those skilled in the art are just it will be readily understood that can A variety of remodeling, addition, substitution, deletion and other variations are made to these specific embodiments, and these variations are in this reality In the range of novel principle.Therefore, the detailed description of front should be clearly understood that it is only with explanation and exemplary side Come what is provided, the spirit and scope of the utility model are only limited by the appended claims and its equivalent formula.

Claims (11)

1. a kind of semiconductor reaction chamber wafer push pin device characterized by comprising

Thimble channel；

Thimble is located in the thimble channel, and the peripheral surface of the thimble includes positioned at the first annular of the thimble top Region and second annular region adjacent with the first annular region, wherein the first annular region and second ring The electric conductivity in shape region is opposite；

Conduct piece positioned at thimble channel inner sidewall and is connected to the peripheral surface of the thimble.

2. semiconductor reaction chamber wafer push pin device according to claim 1, which is characterized in that the first annular region For insulation layer, second annular region is conduction region.

3. semiconductor reaction chamber wafer push pin device according to claim 1, which is characterized in that the first annular region For conduction region, second annular region is insulation layer.

4. semiconductor reaction chamber wafer push pin device according to claim 2 or 3, which is characterized in that further include that detection is single Member, the detection unit are electrically connected the conduction region and the conduct piece.

5. semiconductor reaction chamber wafer push pin device according to claim 4, which is characterized in that the detection unit includes Power supply, resistance and voltage sensor；

The power supply is connected with the conduct piece, for applying voltage on the conduct piece；

The resistance is connected with the conduct piece or with the conduction region of the thimble；

The voltage sensor is parallel to the resistance both ends, for detecting the voltage at the resistance both ends, or

The voltage sensor is parallel to the conduction region and the conduct piece both ends, leads for detecting the conduction region with described Voltage between electric part.

6. semiconductor reaction chamber wafer push pin device according to claim 4, which is characterized in that the detection unit includes Power supply, resistance and current sensor；

The power supply is connected with the conduct piece, for applying voltage on the conduct piece；

The resistance is connected with the conduct piece or with the conduction region of the thimble；

The current sensor is connected with the resistance, for detecting the size of current by the resistance.

7. semiconductor reaction chamber wafer push pin device according to claim 1, which is characterized in that the conduct piece is idler wheel Ring, the roller ring are installed in the inner sidewall in the thimble channel.

8. semiconductor reaction chamber wafer push pin device according to claim 7, which is characterized in that the cross section of the thimble It is round, rectangular or have and protrude from the corresponding recess in thimble vias inner walls part with the roller ring.

9. semiconductor reaction chamber wafer push pin device according to claim 2 or 3, which is characterized in that the thimble is by gold Category is made, and the insulation layer on the thimble is the insulating layer being plated on the thimble.

10. semiconductor reaction chamber wafer push pin device according to any one of claim 1-3, which is characterized in that

The thimble includes the thimble of three or more non-linear configurations, and the thimble corresponding with each thimble is logical Road；And/or

The semiconductor reaction chamber wafer push pin device further includes the pedestal for fixing the push pin device.

11. a kind of semiconductor crystal wafer processing equipment characterized by comprising

Reaction cavity；

Positioned at the push pin device as described in any one of claims 1 to 10 of the reaction cavity.