CN208675597U - Has the LCP high frequency substrate of high Dk and low Df characteristic - Google Patents
Has the LCP high frequency substrate of high Dk and low Df characteristic Download PDFInfo
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Abstract
The utility model discloses a kind of LCP high frequency substrates for having high Dk and low Df characteristic, including an at least copper foil layer, at least one high dielectric LCP sandwich layer and at least one high dielectric glue-line, high dielectric LCP sandwich layer is located between copper foil layer and high dielectric glue-line, high dielectric LCP sandwich layer refers to that Dk value is 6-100, and Df value is the sandwich layer of 0.002-0.010, high dielectric glue-line refers to that Dk value is 6-100, and Df value is the glue-line of 0.002-0.010；Copper foil layer with a thickness of 1-35 μm；High dielectric LCP sandwich layer with a thickness of 12-100 μm, Gao Jie electricity glue-line with a thickness of 12-100 μm.Since high dielectric LCP sandwich layer and high dielectric glue-line all have the characteristic of high Dk and low Df in the utility model, make LCP high frequency substrate obtained that there is splendid high-speed transfer, low-loss, high Dk and low Df performance, low roughness, ultralow water absorption rate, low bounce-back power, good UV laser drill ability and the splendid mechanical performance for being suitble to High Density Packaging.
Description
Technical field
The utility model relates to FPC (flexible circuit board) technical field, in particular to a kind of high frequency high-transmission substrate and system
Preparation Method is mainly used for the high-frequency high-speed transmission field FPC, such as car radar, HA Global Positioning Satellite antenna, cellular telecommunication system
System, radio antenna, data link cable system, direct broadcast satellite, power supply backplane etc..
Background technique
With developing by leaps and bounds for information technology, wireless communication has become the required of life.Wireless communication system is by emitting, connecing
By and antenna formed, it is that communication system is indispensable that wherein antenna, which is responsible for electromagnetic energy magnitude in circuit and air and converts,
It is basic to be equipped with.In the relevant circuit design of antenna, relies on wait passive components inductively or capacitively to carry out of antenna sometimes
Match.As the high-frequency high-speedization that electronic product is transmitted to frivolous, deflection and signal develops, the driving component of relevant design and by
Dynamic component must increase, and circuit certainly will increase with component density, cause electromagnetic interference, noise increase and reliability decline.For solution
Certainly this problem needs to improve passive component, such as the integration of capacitor.And buried capacitor can reduce board area, raising group
Part is using density and the reliability of raising product, therefore developing the baseplate material with high dielectric constant and low-dielectric loss is this neck
The important issue in domain.
Existing market it is more be PCB high frequency plate, realization means and disadvantage have:
1, metal-powder is added in following layer, 45 or more high Dk value can be obtained, but Df is also increased simultaneously, Bu Nengzhen
Just meets the needs of high-frequency high-speed, and such material is easy to appear the behavior of high leakage current in practical application, is greatly reduced
Its application.
2, simple high-content high dielectric ceramic powder is only added in the epoxy, but disperses the ceramics in epoxy resin
Powder is since dipole array is irregular, so that the effect of eelctric dipole polarization can be cancelled, to improve the effect of dielectric constant values
Fruit is fairly limited.And due to excessively high powder content, so that the mechanical strength of substrate reduces, the adhesion between copper foil is substantially
Decline.
High-frequency high-speed Material Field is used in FPC processing procedure, current industry master high frequency plate to be used is more for LCP
(liquid crystal polymer) plate and PTFE (polytetrafluoroethylene (PTFE)) substrate.The current hardboard of PTFE substrate is using, not soft enough, in electrical side
Face, Dk value Dk value in the thickness of 8.0,20mil is limited to be impregnated with glass-fiber-fabric in folded structure in 10, PTFE substrate when the thickness of 6mil
Dk value it is not high, so Dk value is difficult to accomplish 10 or more, it more difficult to be made thickness 2-6mil high Dk substrate.LCP is up to
The dielectric constant that whole radio-frequency regions of 110GHz are held nearly constant, and Df only has 0.002, thermal expansion coefficient is small, can compared with
Under the premise of high reliability, high-frequency high-speed soft board is realized.But the Dk value of general LCP is not high enough in 2.9-3.3, is not achieved high Dk's
Demand.
Such as in 201590948U Chinese patent, M377823 TaiWan, China patent, 2010-7418A day
All propose there is excellent workability, low cost, low energy consumption in this patent and No. 2011/0114371 United States Patent (USP)
Composite substrate, and 202276545U Chinese patent, 103096612B Chinese patent, No. M422159 Chinese platform
In gulf patent and M531056 TaiWan, China patent, then high frequency substrate is made with fluorine system material.CN 205105448U China
Patent then proposes that combined type changes structure high frequency low-dielectric glue film, and CN 205255668U Chinese patent then proposes low-dielectric energy glue
Film, CN 105295753B Chinese patent then propose high frequency adhesion glue water layer structures and preparation method thereof, in 206490891 U of CN
State's patent then proposes the low-dielectric loss FRCC substrate that structure is folded with combined type.TW098124978 TaiWan, China patent electricity
Hold board structure；206490897 U Chinese patent of CN then proposes a kind of FRCC substrate with high cooling efficiency.CN
206932462 U Chinese patents then propose combined type LCP high-frequency high-speed FRCC substrate.Early period, patent was still only Dk between 2.0-
3.5 high frequency substrate material, and it is unable to satisfy the demand of (Dk > 8.0) high Dk.
Utility model content
In order to meet the needs of market is to high-frequency high-speed flexible plate material, LCP high frequency substrate provided by the utility model, by
All there is the characteristic of high Dk and low Df in high dielectric LCP sandwich layer and high dielectric glue-line, there is LCP high frequency substrate obtained splendid
High-speed transfer, low-loss, high Dk and low Df performance, low roughness, ultralow water absorption rate, be suitble to the low anti-of High Density Packaging
Elastic force, good UV laser drill ability and splendid mechanical performance are bonded better than general LCP film and PI (polyimides) type
Piece is suitable for the wearable devices such as 5G smartphone and Apple watch.
In order to solve the above technical problems, the technical solution that the utility model uses is: the utility model provides one
Kind has the LCP high frequency substrate of high Dk and low Df characteristic, including an at least copper foil layer, at least one high dielectric LCP sandwich layer and at least one
High dielectric glue-line, the high dielectric LCP sandwich layer are located between copper foil layer and high dielectric glue-line, and the high dielectric LCP sandwich layer refers to
Dk value is 6-100, and Df value is the sandwich layer of 0.002-0.010, and the high dielectric glue-line refers to that Dk value is 6-100, and Df value is
The glue-line of 0.002-0.010；
The copper foil layer with a thickness of 1-35 μm；The high dielectric LCP sandwich layer with a thickness of 12-100 μm, the high dielectric
Glue-line with a thickness of 12-100 μm.
A kind of implementation of the utility model are as follows: the LCP high frequency substrate is single side copper-clad base plate, and the single side covers copper
Substrate includes a copper foil layer, a high dielectric LCP sandwich layer and a high dielectric glue-line, and the high dielectric LCP sandwich layer is located at the copper foil
Layer the high dielectric glue-line between, the single side copper-clad base plate with a thickness of 25-235 μm.
It further says, the single side copper-clad base plate further includes release layer, and the release layer is located at the high dielectric glue-line
Surface.
Another implementation of the utility model are as follows: the LCP high frequency substrate is double-sided copper-clad substrate, described two-sided to cover
Copper base include two copper foil layers, two high dielectric LCP sandwich layers and a high dielectric glue-line, and the double-sided copper-clad substrate from top to bottom according to
It is secondary be copper foil layer, Gao Jie electricity LCP sandwich layer, Gao Jie electricity glue-line, Gao Jie electricity LCP sandwich layer and copper foil layer, the double-sided copper-clad substrate
With a thickness of 38-370 μm；
Another implementation of the utility model are as follows: the LCP high frequency substrate is double-sided copper-clad substrate, the LCP high
Frequency substrate is double-sided copper-clad substrate, and the double-sided copper-clad substrate includes two copper foil layers, a high dielectric LCP sandwich layer and a high dielectric glue
Layer, and the double-sided copper-clad substrate is followed successively by copper foil layer, Gao Jie electricity LCP sandwich layer, Gao Jie electricity glue-line and copper foil layer, institute from top to bottom
State double-sided copper-clad substrate with a thickness of 26-270 μm.
It further says, the high dielectric glue-line is Bonding strength > 0.7kg/cm2Glue-line.
It further says, it is 0.1-2.0 μm of low profile copper foil layer that the copper foil layer, which is Rz (surface roughness) value, and institute
The Rz value for stating the inner surface that copper foil layer and the high dielectric LCP sandwich layer or high dielectric glue-line stick together is 0.1-2.0 μm, the copper foil
The Rz value of the outer surface of layer is 0.1-0.7 μm.
It further says, the copper foil layer is rolled copper foil layer or electrodeposited copper foil layer.
The beneficial effects of the utility model are:
One, the LCP high frequency substrate of the utility model, due to high dielectric LCP sandwich layer and high dielectric glue-line all have high Dk and
The characteristic of low Df makes LCP high frequency substrate obtained have splendid high-speed transfer, low-loss, high Dk and low Df performance, low
Roughness, ultralow water absorption rate, the low bounce-back power and splendid mechanical performance for being suitble to High Density Packaging, better than general LCP film and
PI type bonding sheet is suitable for the wearable devices such as 5G smartphone and Apple watch；
Furthermore the laser drilling process of LCP high frequency substrate is more preferably, and the small-bore that small-bore is suitable for less than 50 microns adds
Work does not tend to have recessed shape condition；Uniform film thickness when pressing, impedance control is good, is suitable for high-frequency high-speed and transmits FPC；
Furthermore rubbing method current techniques can only at most apply the film of the thickness of 2mil or so, and current 38 μm or more thick films are just
It is not easy to produce, low efficiency, and the LCP high frequency substrate thickness of the preparation method of the utility model preparation is suitable for, and controllability is good, tool
Standby thick film technology of preparing, is more readily apparent 100 microns of substrate, and in the case where thick film, the utility model is still
Characteristic with high Dk and low Df；
Furthermore from test data it can be seen that display, the LCP high frequency substrate of the utility model have low water absorption, water suction
Rate is down to 0.04-0.06%；
Furthermore from test data it can be seen that display, the Bonding strength > 0.7kgf/ of the high dielectric glue-line of the utility model
cm2；
Two, the matching structure composition of the LCP high frequency substrate for having high Dk and low Df characteristic of the utility model is simple, Ke Yijie
The manufacturing procedure in province downstream.
The above description is merely an outline of the technical solution of the present invention for the utility model, in order to better understand this
The technological means of utility model, and can be implemented in accordance with the contents of the specification, below with the preferred embodiment of the utility model
And cooperates attached drawing detailed description is as follows.
Detailed description of the invention
Fig. 1 is the structural schematic diagram (single side copper-clad base plate contains release layer) of the embodiments of the present invention 1；
Fig. 2 is the structural schematic diagram (a kind of structure of double-sided copper-clad substrate) of the embodiments of the present invention 2；
Fig. 3 is the structural schematic diagram (another structure of double-sided copper-clad substrate) of the embodiments of the present invention 3；
Each section label is as follows in attached drawing:
Copper foil layer 10, Gao Jie electricity LCP sandwich layer 20, Gao Jie electricity glue-line 30 and release layer 40.
Specific embodiment
Illustrate specific embodiment of the present utility model below by way of particular specific embodiment, those skilled in the art can
The advantages of the utility model is understood by content disclosed in the present specification easily and effect.The utility model can also it is other not
Same mode is practiced, that is, under the scope of revealed without departing substantially from the utility model, can give different modification and change.
Embodiment: a kind of LCP high frequency substrate having high Dk and low Df characteristic, as shown in Fig. 1 to Fig. 3, including at least one
Copper foil layer, at least one high dielectric LCP (liquid crystal polymer) sandwich layer and at least one high dielectric glue-line, the high dielectric LCP sandwich layer position
Between copper foil layer and high dielectric glue-line, the high dielectric LCP sandwich layer refers to that Dk (dielectric constant) value is 6-100 (10GHz), and
Df (electrical dissipation factor) value is the sandwich layer of 0.002-0.010 (10GHz), and the high dielectric glue-line refers to that Dk value is 6-100
(10GHz), and Df value is the glue-line of 0.002-0.010 (10GHz)；
The copper foil layer with a thickness of 1-35 μm；The high dielectric LCP sandwich layer with a thickness of 12-100 μm, the high dielectric
Glue-line with a thickness of 12-100 μm.
The high dielectric glue-line is Bonding strength > 0.7kg/cm2Glue-line.
The high dielectric LCP sandwich layer includes LCP, further includes strong dielectricity ceramic powder, electric conduction powder, sintering titanium dioxide
At least one of silicon, Teflon, fluorine resin and flame retardant；The LCP is the 5- of the total solid content of high dielectric LCP sandwich layer
98% (weight percent), the strong dielectricity ceramic powder, electric conduction powder, fluorine resin, fused silica, Teflon
It is the 2-90% (weight percent) of the total solid content of high dielectric LCP sandwich layer with the sum of flame retardant.
In the high dielectric LCP sandwich layer, the strong dielectricity ceramic powder is BaTiO3、SrTiO3、Ba(Sr)TiO3、
PbTiO3、CaTiO3And Mg2TiO4At least one of；Wherein the sum of strong dielectricity ceramic powder ratio is high dielectric LCP sandwich layer
Total solid content 0-90% (weight percent)；
The electric conduction powder is transition metal powder, the alloy powder of transition metal, carbon black, carbon fiber, carbon nanotubes
At least one of with metal oxide, wherein the sum of ratio of electric conduction powder is the total solid content of high dielectric LCP sandwich layer
0-45% (weight percent).
In the high dielectric LCP sandwich layer, the ratio of the fluorine resin is the 0- of the total solid content of high dielectric LCP sandwich layer
45% (weight percent), the ratio of the fused silica are the 0-45% (weight of the total solid content of high dielectric LCP sandwich layer
Percentage), the ratio of the Teflon is the 0-45% (weight percent) of the total solid content of high dielectric LCP sandwich layer, described resistance to
The ratio of agent is fired for the 0-45% (weight percent) of the total solid content of high dielectric LCP sandwich layer.
The high dielectric glue-line includes at least one of component A and component B；The sum of ratio of the component A is Gao Jie
The 5-98% (weight percent) of the total solid content of electric glue-line, the component B are the 5-80% of the total solid content of high dielectric glue-line
(weight percent)；
The component A includes fused silica, strong dielectricity ceramic powder, electric conduction powder, Teflon, fluorine resin
At least one of with flame retardant；
The component B includes at least one of macromolecule copolymer resin and macromolecule resin.
In the high dielectric glue-line, the strong dielectricity ceramic powder is BaTiO3、SrTiO3、Ba(Sr)TiO3、
PbTiO3、CaTiO3And Mg2TiO4At least one of；Wherein the sum of strong dielectricity ceramic powder ratio is high dielectric glue-line
The 0-90% (weight percent) of total solid content；
The electric conduction powder is transition metal powder, the alloy powder of transition metal, carbon black, carbon fiber, carbon nanotubes
At least one of with metal oxide, wherein the sum of ratio of electric conduction powder is the 0- of the total solid content of high dielectric glue-line
45% (weight percent).
Strong dielectricity ceramic powder in the high dielectric LCP sandwich layer and high dielectric glue-line can also adulterate a kind of or a kind of
Above metal ion can also undope.
In the high dielectric glue-line, the ratio of the fluorine resin is the 0-45% of the total solid content of high dielectric glue-line
(weight percent), the ratio of the fused silica are the 0-45% (weight percent of the total solid content of high dielectric glue-line
Than), the ratio of the Teflon is the 0-45% (weight percent) of the total solid content of high dielectric glue-line, the ratio of the flame retardant
Example is the 0-45% (weight percent) of the total solid content of high dielectric glue-line.
The macromolecule copolymer resin is fluorine resin, epoxy resin, acrylic resin, amido formate system tree
Rouge, silicon rubber system resin, it is poly- in ring diformazan benzene series resin, bismaleimide amine system resin and polyimides system resins at least
It is a kind of；
The macromolecule resin is also fluorine resin, epoxy resin, acrylic resin, amido formate system resin, silicon
Rubber series resin gathers at least one of ring diformazan benzene series resin, bismaleimide amine system resin and polyimides system resins.
The fluorine resin in the high dielectric LCP sandwich layer and high dielectric glue-line is selected from polytetrafluoroethylene (PTFE), gathers inclined fluorine
Ethylene, vinyl fluoride and vinyl ether co-polymer, the copolymer of tetrafluoroethene and ethylene, polytrifluorochloroethylene and ethylene copolymer,
Tetrafluoroethene, hexafluoropropene and vinylidene fluoride copolymers, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, poly- trifluoro chloroethene
Alkene, polyvinyl chloride, tetrafluoroethene-hexafluoropropylene copolymer, ethylene-fluoride copolymers and hexafluoropropylene (HFP)/tetrafluoroethylene (TFE)-trifluoro
At least one of ethylene copolymer.
It is 0.1-2.0 μm of low profile copper foil layer that the copper foil layer, which is Rz value, and the copper foil layer and the high dielectric LCP
The Rz value for the inner surface that sandwich layer or high dielectric glue-line stick together is 0.1-2.0 μm, and the Rz value of the outer surface of the copper foil layer is 0.1-
0.7μm。
The copper foil layer is rolled copper foil layer or electrodeposited copper foil layer.
Embodiment 1: a kind of LCP high frequency substrate having high Dk and low Df characteristic, as shown in Figure 1, the LCP high frequency substrate
For single side copper-clad base plate, the single side copper-clad base plate includes a copper foil layer, a high dielectric LCP sandwich layer and a high dielectric glue-line, institute
High dielectric LCP sandwich layer is stated to be located between the copper foil layer and the high dielectric glue-line, the single side copper-clad base plate with a thickness of 25-
235μm。
In the present embodiment, the single side copper-clad base plate further includes release layer, and the release layer is located at the high dielectric glue-line
Surface.
The release layer can be release film, and material is polypropylene, Biaxially oriented polypropylene and poly terephthalic acid second
At least one of diol ester, and can be the release film for having two-sided release ability, and or use release paper.
Embodiment 2: a kind of LCP high frequency substrate having high Dk and low Df characteristic, as shown in Fig. 2, the LCP high frequency substrate
For double-sided copper-clad substrate, the double-sided copper-clad substrate includes two copper foil layers, two high dielectric LCP sandwich layers and a high dielectric glue-line, and
The double-sided copper-clad substrate be followed successively by from top to bottom copper foil layer, Gao Jie electricity LCP sandwich layer, Gao Jie electricity glue-line, Gao Jie electricity LCP sandwich layer and
Copper foil layer, the double-sided copper-clad substrate with a thickness of 38-370 μm.
Embodiment 3: a kind of LCP high frequency substrate having high Dk and low Df characteristic, as shown in figure 3, the LCP high frequency substrate
For double-sided copper-clad substrate, the double-sided copper-clad substrate includes two copper foil layers, a high dielectric LCP sandwich layer and a high dielectric glue-line, and
The double-sided copper-clad substrate is followed successively by copper foil layer, Gao Jie electricity LCP sandwich layer, Gao Jie electricity glue-line and copper foil layer from top to bottom, described double
Face copper-clad base plate with a thickness of 26-270 μm.
It is that the formula of the high dielectric LCP sandwich layer of the specific embodiment of the embodiments of the present invention 1-3 (is shown in Table below
1) with the formula (being shown in Table 2) of high dielectric glue-line, wherein embodiment 1 to 7 is the embodiment of embodiment 1, and embodiment 8 to 10 is real
The embodiment of mode 3 is applied, embodiment 11 to 14 is the embodiment of embodiment 2, and table 3 is the single side copper-clad base plate of embodiment 1
With the physical index of comparative example；Table 4 is the double-sided copper-clad substrate of embodiment 2 and 3 and the physical index of comparative example.
The formula of 1: Gao Jie electricity LCP sandwich layer of table
The formula of 2: Gao Jie electricity glue-line of table
Table 3: the physical index of single side copper-clad base plate and comparative example
Table 4: the physical index of double-sided copper-clad substrate and comparative example
Note: the test method of the physical index of table 3 and table 4 executes " soft board assembles important item test philosophy " (TPCA-F-002)
By table 3 and 4 it is found that the LCP high frequency substrate of the utility model has splendid high-speed transfer, low-loss, height
Dk and low Df performance, low roughness, ultralow water absorption rate, good UV laser drill ability, the low bounce-back for being suitble to High Density Packaging
Power and splendid mechanical performance are better than general LCP film and PI type bonding sheet, are suitable for 5G smartphone and Apple
The wearable devices such as watch.
The above description is only the embodiments of the present invention, and therefore it does not limit the scope of the patent of the utility model, all
Equivalent structure made based on the specification and figures of the utility model is applied directly or indirectly in other relevant technologies
Field is also included in the patent protection scope of the utility model.
Claims (8)
1. a kind of LCP high frequency substrate for having high Dk and low Df characteristic, it is characterised in that: including an at least copper foil layer, at least one high
Dielectric LCP sandwich layer and at least one high dielectric glue-line, the high dielectric LCP sandwich layer are located between copper foil layer and high dielectric glue-line, institute
It states high dielectric LCP sandwich layer and refers to that Dk value is 6-100, and Df value is the sandwich layer of 0.002-0.010, the high dielectric glue-line refers to Dk
Value is 6-100, and Df value is the glue-line of 0.002-0.010；
The copper foil layer with a thickness of 1-35 μm；The high dielectric LCP sandwich layer with a thickness of 12-100 μm, the high dielectric glue-line
With a thickness of 12-100 μm.
2. the LCP high frequency substrate of tool high Dk and low Df characteristic according to claim 1, it is characterised in that: the LCP high frequency
Substrate is single side copper-clad base plate, and the single side copper-clad base plate includes a copper foil layer, a high dielectric LCP sandwich layer and a high dielectric glue
Layer, the high dielectric LCP sandwich layer are located between the copper foil layer and the high dielectric glue-line, the thickness of the single side copper-clad base plate
It is 25-235 μm.
3. the LCP high frequency substrate of tool high Dk and low Df characteristic according to claim 2, it is characterised in that: the single side covers
Copper base further includes release layer, and the release layer is located at the surface of the high dielectric glue-line.
4. the LCP high frequency substrate of tool high Dk and low Df characteristic according to claim 1, it is characterised in that: the LCP high frequency
Substrate is double-sided copper-clad substrate, and the double-sided copper-clad substrate includes two copper foil layers, two high dielectric LCP sandwich layers and a high dielectric glue
Layer, and the double-sided copper-clad substrate is followed successively by copper foil layer, Gao Jie electricity LCP sandwich layer, Gao Jie electricity glue-line, Gao Jie electricity LCP from top to bottom
Sandwich layer and copper foil layer, the double-sided copper-clad substrate with a thickness of 38-370 μm.
5. the LCP high frequency substrate of tool high Dk and low Df characteristic according to claim 1, it is characterised in that: the LCP high frequency
Substrate is double-sided copper-clad substrate, and the double-sided copper-clad substrate includes two copper foil layers, a high dielectric LCP sandwich layer and a high dielectric glue
Layer, and the double-sided copper-clad substrate is followed successively by copper foil layer, Gao Jie electricity LCP sandwich layer, Gao Jie electricity glue-line and copper foil layer, institute from top to bottom
State double-sided copper-clad substrate with a thickness of 26-270 μm.
6. the LCP high frequency substrate of tool high Dk and low Df characteristic according to claim 1, it is characterised in that: the high dielectric
Glue-line is Bonding strength > 0.7kg/cm2Glue-line.
7. the LCP high frequency substrate of tool high Dk and low Df characteristic according to claim 1, it is characterised in that: the copper foil layer
It is the low profile copper foil layer that Rz value is 0.1-2.0 μm, and the copper foil layer and the high dielectric LCP sandwich layer or high dielectric glue-line are glutinous
The Rz value of inner surface be 0.1-2.0 μm, the Rz value of the outer surface of the copper foil layer is 0.1-0.7 μm.
8. the LCP high frequency substrate of tool high Dk and low Df characteristic according to claim 1, it is characterised in that: the copper foil layer
For rolled copper foil layer or electrodeposited copper foil layer.
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| CN201821179468.1U CN208675597U (en) | 2018-07-25 | 2018-07-25 | Has the LCP high frequency substrate of high Dk and low Df characteristic |
| TW108121298A TWI738008B (en) | 2018-07-25 | 2019-06-19 | High-frequency copper clad laminate and methods thereof |
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| CN201821179468.1U CN208675597U (en) | 2018-07-25 | 2018-07-25 | Has the LCP high frequency substrate of high Dk and low Df characteristic |
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| TWI738008B (en) | 2021-09-01 |
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