CN208674107U - Compound double damask structure - Google Patents
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- CN208674107U CN208674107U CN201821441178.XU CN201821441178U CN208674107U CN 208674107 U CN208674107 U CN 208674107U CN 201821441178 U CN201821441178 U CN 201821441178U CN 208674107 U CN208674107 U CN 208674107U
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 43
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- 240000004533 Hesperis matronalis Species 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 157
- 239000002184 metal Substances 0.000 claims abstract description 157
- 238000005530 etching Methods 0.000 claims description 44
- 230000004888 barrier function Effects 0.000 claims description 32
- 239000004020 conductor Substances 0.000 claims description 28
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 21
- 229910052721 tungsten Inorganic materials 0.000 claims description 21
- 239000010937 tungsten Substances 0.000 claims description 21
- 208000005189 Embolism Diseases 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 8
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- 238000010586 diagram Methods 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 239000007769 metal material Substances 0.000 description 12
- 238000005240 physical vapour deposition Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
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- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 241000283086 Equidae Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
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- 239000004744 fabric Substances 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
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Abstract
The utility model provides a kind of compound double damask structure, including top dielectric, bottom dielectric layer；At least two layers of intermediate dielectric layer between top dielectric, bottom dielectric layer；First damascene structure, including the first top metal conducting wire being formed in top dielectric, and with the first top metal conducting wire integrally connected and through the first conductive plug of at least two layers intermediate dielectric layer；Second damascene structure, including be at least partly formed in top dielectric the second top metal conducting wire, connect and run through the first intermetallic metal conducting wire of one layer of intermediate dielectric layer with the second conductive plug of the bottom integrally connected of the second top metal conducting wire and with the second conductive plug bottom.The utility model substitutes multilayer Damascus technics by compound dual damascene process, greatly simplifies processing step, improves production efficiency；And the metal interconnection structure by being interspersed realizes the raising of wiring density, and then greatlys save cost.
Description
Technical field
The utility model relates to semiconductor devices and manufacturing fields, more particularly to a kind of compound double damask structure.
Background technique
With the continuous diminution of transistor size, the quantity of transistor constantly rises in integrated circuit, the crystalline substance of substantial amounts
The signal of body pipe is integrated to need more and more highdensity metal interconnecting layers to realize connection, the electricity of the following metal interconnecting wires
Resistance and parasitic capacitance have seriously affected integrated circuit high speed development.
The material of conventional metals interconnection line uses aluminium, in order to overcome the resistance and parasitic capacitance of metal interconnecting wires, semiconductor
For industry from metal aluminum interconnecting technological development to metal copper interconnecting line technique, the formation of copper lines cannot pass through traditional aluminum steel work
The subtractive etch process of skill goes to realize, therefore, dual damascene process comes into being.Usually first etching is logical for dual damascene process
Copper is filled in hole, then etching groove, Yu Tongkong and groove, planarization process finally is carried out to copper, in every two layers of dielectric layer
Form a double damask structure.Situation more for metal interconnecting layer, the company of Yao Shixian tungsten plug and second metal layer
Connecing must be by the first metal layer and the first via hole；Realize that the connection of the first metal layer and third metal layer must be by the
One via hole, second metal layer and the second via hole, need repeated multiple times dual damascene process, are just able to achieve tungsten plug and second
Connection between the connection of metal layer more than metal layer or non-conterminous two metal layers, processing step is relatively cumbersome,
Production efficiency is also relatively low as a result,.
Therefore, for these reasons, semiconductor structure and processing step how are improved, the metal interconnection of spanning multilayer is simplified
The processing step of line connection, and then improve production efficiency, it has also become one of those skilled in the art's urgent problem to be solved.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of compound dual damascenes
Structure, complex process, production efficiency for solving the metal interconnecting wires across multilayer in the prior art are low, integrated level is low etc. asks
Topic.
In order to achieve the above objects and other related objects, the utility model provides a kind of compound double damask structure, institute
Compound double damask structure is stated to include at least:
Top dielectric, bottom dielectric layer and between the top dielectric and the bottom dielectric layer extremely
Few two layers of intermediate dielectric layer, is provided with first Damascus in the top dielectric and at least two layers of intermediate dielectric layer
Structure and the second damascene structure；
First damascene structure includes the first top metal conducting wire being formed in the top dielectric, and
With the first conductive plug of the first top metal conducting wire integrally connected, first conductive plug is through at least two layers described
Intermediate dielectric layer；
Second damascene structure includes the second top metal being at least partly formed in the top dielectric
Conducting wire, with the second conductive plug of the bottom integrally connected of the second top metal conducting wire and with second conductive plugs
The first intermetallic metal conducting wire of bottom connection is filled in, it is perforative that the first intermetallic metal conducting wire is formed in first conductive plug
Not being electrically connected in one layer and with first conductive plug wherein in the intermediate dielectric layer, second conductive plug runs through
Wherein it is located at different layers in one layer and with the first intermetallic metal conducting wire at least two layers of intermediate dielectric layer.
Preferably, at least two layers of intermediate dielectric layer includes two layers of intermediate dielectric layer, the bottom of first conductive plug
Portion is connected to the top of the bottom dielectric layer；Second conductive plug runs through wherein one layer of two layers of intermediate dielectric layer, institute
It states the first intermetallic metal conducting wire to be formed in another layer of two layers of intermediate dielectric layer, the bottom of the first intermetallic metal conducting wire connects
Pass to the top of the bottom dielectric layer.
Preferably, at least two layers of intermediate dielectric layer includes three layers of intermediate dielectric layer；First conductive plug runs through
The bottom of three layers of intermediate dielectric layer, first conductive plug is connected to the top of the bottom dielectric layer；Described second
Damascene structure further includes the third conductive plug with the bottom integrally connected of the first intermetallic metal conducting wire, and described second
Conductive plug, the first intermetallic metal conducting wire and the third conductive plug successively extend through intermediate Jie of respective layer
Electric layer, and the bottom of the third conductive plug is connected to the top of the bottom dielectric layer.
Preferably, mutually isolated the first conductive structure and the second conductive structure, institute are provided in the bottom dielectric layer
It states the first damascene structure and is connected to first conductive structure, second damascene structure is connected to described second and leads
Electric structure.
Preferably, first conductive structure and second conductive structure are tungsten plug.
Preferably, first conductive structure and second conductive structure are metal line.
Preferably, arbitrary neighborhood double layer of metal is led in first damascene structure and second damascene structure
Orthographic projection of the line in the bottom dielectric layer has overlapping region.
Preferably, the body layer material of first and second conductive plug and the first and second top metals conducting wire
Including copper.
Preferably, first damascene structure and second damascene structure are in each conducting wire side wall to its bottom
The surface of conductive plug is all provided with barrier layer.
Preferably, each layer of upper surface of at least two layers of intermediate dielectric layer and the bottom dielectric layer is each formed with quarter
Lose stop-layer.
It is highly preferred that the material of the etching stop layer includes silicon nitride, the top dielectric, it is at least two layers described in
Between dielectric layer and the material of the bottom dielectric layer include silica.
Preferably, first damascene structure includes the first branch and the second branch, second Damascus knot
Structure includes third branch and the 4th branch；It is all provided in first branch intermediate dielectric layer corresponding with second branch
It sets conductive plug or is respectively provided with plain conductor, in the third branch intermediate dielectric layer corresponding with the 4th branch
Setting conductive plug is respectively provided with plain conductor, and appoints in first damascene structure and second damascene structure
Orthographic projection of the adjacent two layers plain conductor in the bottom dielectric layer of anticipating has overlapping region.
Preferably, first mutually isolated branch's conductive structure, the second branch conduction are provided in the bottom dielectric layer
Structure, third branch conductive structure and the 4th branch's conductive structure, first branch are connected to the first branch conduction knot
Structure, second branch are connected to second branch conductive structure, and it is conductive that the third branch is connected to the third branch
Structure, the 4th branch are connected to the 4th branch's conductive structure.
Preferably, first branch conductive structure, second branch conductive structure, third branch conductive structure
And the 4th branch's conductive structure is tungsten plug.
Preferably, first branch conductive structure, second branch conductive structure, third branch conductive structure
And the 4th branch's conductive structure is metal line.
Preferably, two conductive plugs of the same plain conductor are connected in second branch and the third branch
It is interspersed, two conductive plugs alignment point of the same plain conductor is connected in first branch and the 4th branch
Cloth.
Preferably, second branch and the third branch are stepped, second branch and the third branch
Ladder extending direction it is opposite.
Preferably, at least two layers of intermediate dielectric layer includes nine layers of intermediate dielectric layer；First branch and described
Two branches include the first top metal conducting wire being formed in the top dielectric, integrally connect with first plain conductor
The first conductive plug for connecing, the second intermetallic metal conducting wire being connect with first conductive plug bottom, with described second among
4th conductive plug of the bottom integrally connected of plain conductor, the third intermetallic metal being connect with privates embolism bottom
Conducting wire and the 5th conductive plug with the bottom integrally connected of the third intermetallic metal conducting wire, first branch and described
The first top metal conducting wire in two branches is connected with each other；The third branch and the 4th branch include be formed in it is described
The second top metal conducting wire in top dielectric, the second conduction with the bottom integrally connected of the second top metal conducting wire
Embolism, the first intermetallic metal conducting wire being connect with second conductive plug bottom, the bottom with the first intermetallic metal conducting wire
The third conductive plug of portion's integrally connected, the 4th intermetallic metal conducting wire being connect with third conductive plug bottom, with it is described
In 6th conductive plug of the bottom integrally connected of the 4th intermetallic metal conducting wire, the third branch and the 4th branch
Two top metal conducting wires are connected with each other；Wherein, first conductive plug, the third conductive plug, the 4th conductive plugs
Plug and the 6th conductive plug extend through corresponding three layers of intermediate dielectric layer, second conductive plug and described the
Five conductive plugs extend through one layer of corresponding intermediate dielectric layer.
Preferably, the second intermetallic metal conducting wire in second branch and the first intermetallic metal in the third branch
Orthographic projection of the conducting wire in the bottom dielectric layer has overlapping region.
As described above, the compound double damask structure of the utility model, has the advantages that
The compound double damask structure of the utility model substitutes the double big horses of multilayer by compound dual damascene process
Scholar's leather technique greatly simplifies processing step, improves production efficiency；And the metal interconnection structure by being interspersed realizes that wiring is close
The raising of degree, and then greatly save cost.
Detailed description of the invention
Fig. 1 is shown as metal interconnection structure schematic diagram in the prior art.
Fig. 2 is shown as the flow diagram of the preparation method of the compound double damask structure of the utility model.
Fig. 3 is shown as the schematic diagram that embodiment one forms bottom dielectric layer.
Fig. 4 is shown as embodiment one in the schematic diagram for forming the first intermediate dielectric layer in bottom dielectric layer.
Fig. 5 is shown as the schematic diagram that embodiment one forms primary intermediate sulcus slot in the first intermediate dielectric layer.
Fig. 6 is shown as the schematic diagram that embodiment one forms the first intermetallic metal conducting wire in primary intermediate sulcus slot.
Fig. 7 is shown as embodiment one in forming showing for the second intermediate dielectric layer and top dielectric in the first intermediate dielectric layer
It is intended to.
Fig. 8 is shown as embodiment one and forms in top dielectric, the second intermediate dielectric layer and the first intermediate dielectric layer
One through-hole forms the schematic diagram of the second through-hole in the second intermediate dielectric layer and the first intermediate dielectric layer.
Fig. 9 is shown as the signal that embodiment one forms the first top channel and the second top channel in top dielectric
Figure.
Figure 10 is shown as the first top metal conducting wire and the first conductive plug that embodiment one forms integrally connected, forms one
The schematic diagram of second top metal conducting wire and the second conductive plug of body connection.
Figure 11 is shown as the schematic diagram that embodiment two forms bottom dielectric layer.
Figure 12 is shown as embodiment two in forming third intermediate dielectric layer and the first intermediate dielectric layer in bottom dielectric layer
Schematic diagram.
Figure 13 is shown as embodiment two and forms showing for third through-hole in third intermediate dielectric layer and the first intermediate dielectric layer
It is intended to.
Figure 14 is shown as the schematic diagram that embodiment two forms primary intermediate sulcus slot in the first intermediate dielectric layer.
Figure 15 is shown as the signal for the first intermetallic metal conducting wire and third conductive plug that embodiment dimorphism is attached
Figure.
Figure 16 is shown as embodiment two in forming the second interlevel dielectric in third intermediate dielectric layer and the first intermediate dielectric layer
The schematic diagram of layer and top dielectric.
Figure 17 is shown as embodiment two in top dielectric, the second intermediate dielectric layer, the first intermediate dielectric layer and third
Between form first through hole in dielectric layer, the signal of the second through-hole is formed in the second intermediate dielectric layer and the first intermediate dielectric layer
Figure.
Figure 18 is shown as the signal that embodiment two forms the first top channel and the second top channel in top dielectric
Figure.
Figure 19 is shown as the first top metal conducting wire and the first conductive plug that embodiment dimorphism is attached, and forms one
The schematic diagram of second top metal conducting wire and the second conductive plug of body connection.
Figure 20 is shown as the schematic top plan view of the compound damascene structure of the utility model.
Figure 21 is shown as the schematic diagram of the compound damascene structure of embodiment three.
Component label instructions
The the first~the second interconnection structure of 1a, 1b
211 bottom dielectric layers
212,213 first, second conductive structure
The first, second tungsten plug of 212a, 213a
212b, 213b metal line
The branch's conductive structure of 212a1,212a2,213a1,21,3a2 first~the 4th
214a, 214b, 214c, 214d, 214e, 214f, 214g, the first~the 9th intermediate dielectric layer
214h、214i
214a ', 214b ', 214c ', 214d ', 214e ', 214f ', the first~the tenth etching stop layer
214g’、214h’、214i’、214j’
215 primary intermediate sulcus slots
216, the 230,232,234, first~the 4th intermetallic metal conducting wire
The barrier layer 216a, 223a, 225a, 230a, 232a, 234a first~the 6th
217 top dielectrics
218 first through hole
219 second through-holes
220 first top channels
221 second top channels
222, the 224,229,231,233, the 235 first~the 6th conductive plug
223 first top metal conducting wires
225 second top metal conducting wires
226 first damascene structures
The first, second branch of 226a, 226b
227 second damascene structures
227a, 227b third, the 4th branch
228 third through-holes
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to FIG. 1 to FIG. 21.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model is only shown with related component in the utility model rather than when according to actual implementation in schema then
Component count, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind
Become, and its assembly layout kenel may also be increasingly complex.
As shown in Figure 1, the first interconnection structure 1a is for realizing two conductive structures in bottom dielectric layer (not shown)
Interconnection, wherein plain conductor horizontal extension in intermediate dielectric layer (not shown) in the first interconnection structure 1a.By
In being routed to obtain limitation, when there are the second interconnection structure 1b, the first interconnection structure 1a and the second interconnection structure 1b
It can only be arranged side by side, such wire laying mode leads to that the wiring density of each layer plain conductor is low, layout area waste, directly affects
The integrated level of chip.The utility model solves the problems, such as that wiring density is low by compound double damask structure, while improving life
Produce efficiency.
Embodiment one
As shown in Fig. 2~Figure 10, the present embodiment provides a kind of preparation methods of compound double damask structure, comprising:
11) bottom dielectric layer 211 is provided, forms the first intermediate dielectric layer 214a in Yu Suoshu bottom dielectric layer 211.
Specifically, as shown in figure 3, be provided in the bottom dielectric layer 211 mutually isolated the first conductive structure 212 and
Second conductive structure 213, in the present embodiment, first conductive structure 212 and the second conductive structure 213 are respectively the first tungsten
Fill in 212a and the second tungsten plug 213a.Active area on the first tungsten plug 212a and the second tungsten plug 213a and silicon wafer passes through gold
Belong to the connection of silicide (not shown), the material of the metal silicide includes but is not limited to titanium silicide or cobalt silicide.It is described
First tungsten plug 212a and the second tungsten plug 213a avoids the metal in processing procedure reaction for connecting metal layer and the active area
The surface that copper is diffused into the active area forms unstable reactant, and then influences the electrical property that metal layer is connect with active area
Energy.
Specifically, as shown in figure 4, in the present embodiment, using including physical vapour deposition (PVD) (Physical Vapor
Deposition, PVD) or chemical vapor deposition (Chemical Vapor Deposition, CVD) or those skilled in the art
It is contemplated that other deposition methods in being sequentially depositing the first etching stop layer 214a ' and described in the bottom dielectric layer 211
First intermediate dielectric layer 214a.
12) etch step 11) formed structure in the first intermediate dielectric layer 214a to form primary intermediate sulcus slot
215, and metal material is filled in the primary intermediate sulcus slot 215, form the first intermetallic metal conducting wire 216.The metal material
Material includes but is not limited to copper or aluminium.
Specifically, as shown in figure 5, being sequentially etched the first intermediate dielectric layer 214a and first etching stop layer
214a ', to form the primary intermediate sulcus slot 215, the top of the exposure of the primary intermediate sulcus slot 215 second tungsten plug 213a
Portion.In the present embodiment, using include plasma etching method or it may occur to persons skilled in the art that other lithographic methods.
Specifically, as shown in fig. 6, the inner surface (side wall and bottom) in the primary intermediate sulcus slot 215 forms the first resistance
Then barrier 216a fills metal material in the groove that the first barrier layer 216a is surrounded.
13) the second intermediate dielectric layer 214b and a top dielectric 217 are formed in the body structure surface that step 12) is formed, carved
The top dielectric 217, the second intermediate dielectric layer 214b and the first intermediate dielectric layer 214a are lost, to form first
Through-hole 218, the first through hole 218 are at least through to the bottom of the first intermediate dielectric layer 214a, while etching the top
Portion's dielectric layer 217 and the second intermediate dielectric layer 214b, to form the second through-hole 219, described in the exposure of the second through-hole 219
The upper surface of first intermetallic metal conducting wire 216.
Specifically, as shown in fig. 7, in the present embodiment, using physical vapour deposition (PVD) (Physical Vapor
Deposition, PVD) or chemical vapor deposition (Chemical Vapor Deposition, CVD) Yu Suoshu first among be situated between
The surface of electric layer 214a sequentially forms the second etching stop layer 214b ', the second intermediate dielectric layer 214b, third etching stop layer
214c ' and top dielectric 217.
Specifically, as shown in figure 8, being sequentially etched the top dielectric 217, the third etching stop layer 214c ', institute
State the second intermediate dielectric layer 214b, the second etching stop layer 214b ', the first intermediate dielectric layer 214a and described first
Etching stop layer 214a ', to form the first through hole 218, the top of the exposure of the first through hole 218 first tungsten plug 212a
Portion.
Specifically, as shown in figure 8, etching the top dielectric 217, the third etching stop layer 214c ', institute simultaneously
The second intermediate dielectric layer 214b and the second etching stop layer 214b ' is stated, to form second through-hole 219, described second
The top of the exposure of through-hole 219 first intermediate dielectric layer 216.
It should be noted that in the present embodiment, the top bore of the first through hole 218 and second through-hole 219
Greater than bottom bore, and the bore of the first through hole 218 and second through-hole 219 distinguishes continuous gradation.In practical application
In, being set as needed for the bore of the first through hole 218 and second through-hole 219 is not limited to this embodiment.
14) top dielectric 217 is etched, it is described to form the first top channel 220 and the second top channel 221
First top channel 220 and first through hole perforation 218, second top channel 221 is passed through with second through-hole 219
It is logical.
Specifically, as shown in figure 9, being sequentially etched the top dielectric 217 and the third etching stop layer 214c ',
To form first top channel 220 and second top channel 221, first top channel 220 and described first
Through-hole 218 penetrates through, and the bottom width of first top channel 220 is greater than the top bore of the first through hole 218；It is described
Second top channel 221 is penetrated through with second through-hole 219, and the bottom width of second top channel 221 is greater than described
The top bore of second through-hole 219.
15) metal material is filled in the second top channel of Yu Suoshu 221 and second through-hole 219, forms integrally connected
The second top metal conducting wire 225 and the second conductive plug 224, in forming the second damascene in the bottom dielectric layer 211
Remove from office structure 227；Metal material is filled in first top channel 220 and the first through hole 218 simultaneously, formation integrally connects
The the first top metal conducting wire 223 and the first conductive plug 222 connect, in the first big horse of formation in the bottom dielectric layer 211
Scholar removes from office structure 223.
Specifically, as shown in Figure 10, the inner surface of the first top channel of Yu Suoshu 220 and the first through hole 218 is formed
The inner surface formation third barrier layer of the second top channel of second barrier layer 223a, Yu Suoshu 221, second through-hole 219
225a, each barrier layer is mutually indepedent and integrally connected；Then in the second barrier layer 223a groove surrounded and the third
Metal material is filled respectively in the groove that barrier layer 225a is surrounded, to form the first top metal conducting wire of integrally connected
223 and first conductive plug 222, the second top metal conducting wire 225 of integrally connected and second conductive plug
224。
It should be noted that in the present embodiment, the thickness of each intermediate dielectric layer includes 100~1000 nanometers, it can basis
Actual needs setting, is not limited to this embodiment.The top dielectric 217, each intermediate dielectric layer and the bottom dielectric layer
211 material includes silica, and the material of each etching stop layer includes silicon nitride, the material on each barrier layer include tantalum nitride or
Tantalum, it includes copper or aluminium that filling, which forms plain conductor and the body layer metal material of conductive plug, and each material can be according to actual needs
Setting, is not limited to this embodiment.
As shown in Figure 10, the compound double damask structure of the present embodiment includes:
Top dielectric 217, bottom dielectric layer 211 and between the top dielectric 217 and the bottom dielectric layer
The first intermediate dielectric layer 214a and the second intermediate dielectric layer 214b between 211, in the top dielectric 217, described first
The first damascene structure 226 and the second damascene are provided in intermediate dielectric layer 214a and the second intermediate dielectric layer 214b
Remove from office structure 227.
Specifically, the bottom dielectric layer 211 is set to bottom, in the first intermediate dielectric layer 214a and described second
Between dielectric layer 214b be set in turn in the bottom dielectric layer 211, the top dielectric 217 is set among described second
On dielectric layer 214b, the bottom dielectric layer 211, the first intermediate dielectric layer 214a, the second intermediate dielectric layer 214b
And the material of the top dielectric 217 includes silica.
It should be noted that in the present embodiment, the bottom dielectric layer 211, the first intermediate dielectric layer 214a, institute
The upper surface for stating the second intermediate dielectric layer 214b is respectively formed etching stop layer.
Specifically, in the present embodiment, be provided in the bottom dielectric layer 211 mutually isolated the first tungsten plug 212a and
Second tungsten plug 213a, in practical applications, the conductive structure being arranged in the bottom dielectric layer 211 may include metal line, institute
The material for stating metal line includes copper or aluminium, is not limited to this embodiment.
Specifically, first damascene structure 226 include the first top-level metallic conducting wire 223 and with first top layer
First conductive plug 222 of 223 integrally connected of plain conductor.The first top-level metallic conducting wire 223 is formed in the top and is situated between
In electric layer 217, in the present embodiment, the first top-level metallic conducting wire 223 is connected to top and the institute of the top dielectric 217
State the bottom of third etching stop layer 214c '.First conductive plug 222 runs through the second intermediate dielectric layer 214b and institute
The first intermediate dielectric layer 214a is stated, in the present embodiment, first conductive plug 222 is connected to the first top-level metallic conducting wire
223 bottom and the top of the first tungsten plug 212a.
It should be noted that the first top-level metallic conducting wire 223 and first conductive plug 222 of integrally connected
Side wall and bottom are provided with the second barrier layer 223a, the second barrier layer 223a integrally connected.
Specifically, second damascene structure 227 includes the second top-level metallic conducting wire 225 and second top layer
It second conductive plug 224 of 225 integrally connected of plain conductor and is connected among the first of 224 bottom of the second conductive plug
Plain conductor 216.The second top-level metallic conducting wire 225 is formed in the top dielectric 217, in the present embodiment, institute
It states the second top-level metallic conducting wire 225 and is connected to the top of the top dielectric 217 and the bottom of the third etching stop layer 214c '
Portion.Second conductive plug 224 runs through the second intermediate dielectric layer 214b, in the present embodiment, second conductive plugs
The bottom of 222 connection the first top-level metallic conducting wire 223 of plug and the bottom of the second etching stop layer 214b '.Described
One intermetallic metal conducting wire 216 is formed in the first intermediate dielectric layer 214a, in the present embodiment, first intermetallic metal
Conducting wire 216 is connected to the bottom of second conductive plug 224 and the top of the second tungsten plug 213a.
It should be noted that the second top-level metallic conducting wire 225 and second conductive plug 224 of integrally connected
Side wall and bottom are provided with third barrier layer 225a, the third barrier layer 225a integrally connected.First intermetallic metal is led
The side wall of line 216 and bottom are provided with the first barrier layer 216a, the first barrier layer 216a integrally connected.
In the present embodiment, the first top-level metallic conducting wire 223, first conductive plug 222, second top layer
The body layer material of plain conductor 225 and the first intermetallic metal conducting wire 216 includes copper.
In the present embodiment, the first intermetallic metal conducting wire 216 is located at the perforative centre of first conductive plug 222
Wherein in one layer of dielectric layer, can be by first damascene structure for upper and lower level wiring than the interconnection structure of comparatively dense
226 and the intermetallic metal conducting wire of second damascene structure 227 be set in different intermediate dielectric layers, avoided together with this
The layout area occupied in one intermediate dielectric layer is excessive, leads to the waste of layout area in other intermediate dielectric layers, by mutual
Staggered mode improves wiring density, while simplifying the processing step of the metal interconnection across multilayer intermediate dielectric layer.
Embodiment two
As shown in Fig. 2, Figure 11~Figure 20, the present embodiment provides a kind of preparation method of compound double damask structure, with
Embodiment one the difference is that, intermediate dielectric layer in the present embodiment is three layers, is included the following steps:
21) bottom dielectric layer 211 is provided, sequentially forms third intermediate dielectric layer in Yu Suoshu bottom dielectric layer 211
214c and the first intermediate dielectric layer 214a.
Specifically, as shown in figure 11, the first mutually isolated conductive structure 212 is provided in the bottom dielectric layer 211
And second conductive structure 213, in the present embodiment, first conductive structure 212 and the second conductive structure 213 are respectively first
Metal line 212b and the second metal line 213b.The first metal line 212b and the second metal line 213b is gold
Belong to the random layer in wiring layer, can realize this implementation by the first metal line 212b and the second metal line 213b
Compound damascene structure and lower metal interconnection structure be electrically connected.
Specifically, as shown in figure 12, in the present embodiment, using physical vapour deposition (PVD) (Physical Vapor
Deposition, PVD) or chemical vapor deposition (Chemical Vapor Deposition, CVD) or those skilled in the art
Member it is contemplated that other deposition methods in being sequentially depositing the 4th etching stop layer 214d ', third in the bottom dielectric layer 211
Intermediate dielectric layer 214c, the first etching stop layer 214a ' and the first intermediate dielectric layer 214a.
22) etch step 21) formed structure in the third intermediate dielectric layer 214c and first interlevel dielectric
Layer 214a, to form third through-hole 228, then the upper surface of the exposure of third through-hole 228 bottom dielectric layer 211 is carved
Lose the first intermediate dielectric layer 214a to form the primary intermediate sulcus slot 215, the primary intermediate sulcus slot 215 and described the
The perforation of three through-holes 228, and metal material is filled in the primary intermediate sulcus slot 215 and the third through-hole 228, form one
The the first intermetallic metal conducting wire 216 and third conductive plug 229 of connection.
Specifically, as shown in figure 13, the first intermediate dielectric layer 214a, first etching stop layer are sequentially etched
214a ', the third intermediate dielectric layer 214c and the 4th etching stop layer 214d ', to form the third through-hole 228,
The top of the exposure of the second through-hole 228 second metal line 213b.
It should be noted that in the present embodiment, the top bore of the third through-hole 228 is greater than bottom bore, and institute
State the bore difference continuous gradation of third through-hole 228.In practical applications, the bore of the third through-hole 228 can be as needed
It is set, is not limited to this embodiment.
Specifically, as shown in figure 14, the first intermediate dielectric layer 214a and first etching stop layer are sequentially etched
214a ', to form the primary intermediate sulcus slot 215, the primary intermediate sulcus slot 215 is penetrated through with the third through-hole 228, and institute
The bottom width for stating primary intermediate sulcus slot 215 is greater than the top bore of the third through-hole 228.
Specifically, as shown in figure 15, the inner surface of Yu Suoshu primary intermediate sulcus slot 215 and the third through-hole 228 is formed
First barrier layer 216a, the first barrier layer 216a integrally connected；Then the groove surrounded in the first barrier layer 216a
Middle filling metal material, to form the first intermetallic metal conducting wire 216 and the third conductive plug 229 of integrally connected.
In the present embodiment, the metal material includes copper.
23) the second intermediate dielectric layer 214b and a top dielectric 217 are formed in the body structure surface that step 22) is formed, carved
The top dielectric 217, the second intermediate dielectric layer 214b and the first intermediate dielectric layer 214a are lost, to form first
Through-hole 218, the first through hole 218 are at least through to the bottom of the first intermediate dielectric layer 214a, while etching the top
Portion's dielectric layer 217 and the second intermediate dielectric layer 214b, to form the second through-hole 219, described in the exposure of the second through-hole 219
The upper surface of first intermetallic metal conducting wire 216.
Specifically, as shown in Figure 16~Figure 17, step is the same as example 1, and will not repeat them here.
24) top dielectric 217 is etched, it is described to form the first top channel 220 and the second top channel 221
First top channel 220 and first through hole perforation 218, second top channel 221 is passed through with second through-hole 219
It is logical.
Specifically, as shown in figure 18, step is the same as example 1, and will not repeat them here.
25) metal material is filled in the second top channel of Yu Suoshu 221 and second through-hole 219, forms integrally connected
The second top metal conducting wire 225 and the second conductive plug 224, in forming the second damascene in the bottom dielectric layer 211
Remove from office structure 227；Metal material is filled in first top channel 220 and the first through hole 218 simultaneously, formation integrally connects
The the first top metal conducting wire 223 and the first conductive plug 222 connect, in the first big horse of formation in the bottom dielectric layer 211
Scholar removes from office structure 223.
Specifically, as shown in figure 19, step is the same as example 1, and will not repeat them here.
It should be noted that in the present embodiment, the material of each structure and the setting of size are the same as example 1, herein
It does not repeat one by one.
As shown in figure 19, the compound double damask structure of the present embodiment includes:
Top dielectric 217, bottom dielectric layer 211 and between the top dielectric 217 and the bottom dielectric layer
Third intermediate dielectric layer 214c, the first intermediate dielectric layer 214a and the second intermediate dielectric layer 214b between 211, at the top
Dielectric layer 217, the third intermediate dielectric layer 214c, the first intermediate dielectric layer 214a and second intermediate dielectric layer
The first damascene structure 226 and the second damascene structure 227 are provided in 214b.
Specifically, the bottom dielectric layer 211 is set to bottom, the third intermediate dielectric layer 214c, in described first
Between dielectric layer 214a and the second intermediate dielectric layer 214b be set in turn in the bottom dielectric layer 211, the top is situated between
Electric layer 217 is set on the second intermediate dielectric layer 214b, the bottom dielectric layer 211, the third intermediate dielectric layer
214c, the first intermediate dielectric layer 214a, the second intermediate dielectric layer 214b and the top dielectric 217 material packet
Include silica.
It should be noted that in the present embodiment, the bottom dielectric layer 211, the third intermediate dielectric layer 214c, institute
State the first intermediate dielectric layer 214a, the upper surface of the second intermediate dielectric layer 214b is respectively formed etching stop layer.
Specifically, in the present embodiment, the first mutually isolated metal line is provided in the bottom dielectric layer 211
212b and the second metal line 213b, in practical applications, the conductive structure being arranged in the bottom dielectric layer 211 may include tungsten
Plug, is not limited to this embodiment.
Specifically, first damascene structure 226 include the first top-level metallic conducting wire 223 and with first top layer
First conductive plug 222 of 223 integrally connected of plain conductor.The first top-level metallic conducting wire 223 is formed in the top and is situated between
In electric layer 217, in the present embodiment, the first top-level metallic conducting wire 223 is connected to top and the institute of the top dielectric 217
State the bottom of third etching stop layer 214c '.First conductive plug 222 runs through the second intermediate dielectric layer 214b, institute
State the first intermediate dielectric layer 214a and third intermediate dielectric layer 214c, in the present embodiment, first conductive plug 222
It is connected to the bottom of the first top-level metallic conducting wire 223 and the top of the first metal line 212b.
It should be noted that the first top-level metallic conducting wire 223 and first conductive plug 222 of integrally connected
Side wall and bottom are provided with the second barrier layer 223a, the second barrier layer 223a integrally connected.
Specifically, second damascene structure 227 includes the second top-level metallic conducting wire 225 and second top layer
Second conductive plug 224 of 225 integrally connected of plain conductor is connected among the first of 224 bottom of the second conductive plug
Plain conductor 216 and third conductive plug 229 with 216 integrally connected of the first intermetallic metal conducting wire.Second top layer
Plain conductor 225 is formed in the top dielectric 217, and in the present embodiment, the second top-level metallic conducting wire 225 is connected to
The top of the top dielectric 217 and the bottom of the third etching stop layer 214c '.Second conductive plug 224 passes through
The second intermediate dielectric layer 214b is worn, in the present embodiment, second conductive plug 222 is connected to first top-level metallic
The bottom of conducting wire 223 and the bottom of the second etching stop layer 214b '.The first intermetallic metal conducting wire 216 is formed in institute
It states in the first intermediate dielectric layer 214a, in the present embodiment, the first intermetallic metal conducting wire 216 is connected to second conductive plugs
The bottom of plug 224 and the bottom of the first etching stop layer 214a '.The third conductive plug 229 is in the third
Between dielectric layer 214c, in the present embodiment, the third conductive plug 229 is connected to the bottom of the first intermetallic metal conducting wire 216
Portion and the top of the second metal line 213b.
It should be noted that the second top-level metallic conducting wire 225 and second conductive plug 224 of integrally connected
Side wall and bottom are provided with third barrier layer 225a, the third barrier layer 225a integrally connected.Described the first of integrally connected
The side wall and bottom of intermetallic metal conducting wire 216 and the third conductive plug 229 are provided with the first barrier layer 216a, and described first
Barrier layer 216a integrally connected.
In the present embodiment, the first top-level metallic conducting wire 223, first conductive plug 222, second top layer
The body layer material of plain conductor 225, the first intermetallic metal conducting wire 216 and the third conductive plug 229 includes copper.
In the present embodiment, the first intermetallic metal conducting wire 216 is located at the perforative centre of first conductive plug 222
Wherein in one layer of dielectric layer, can be by first damascene structure for upper and lower level wiring than the interconnection structure of comparatively dense
226 and the intermetallic metal conducting wire of second damascene structure 227 be set in different intermediate dielectric layers, avoided together with this
The layout area occupied in one intermediate dielectric layer is excessive, leads to the waste of layout area in other intermediate dielectric layers, by mutual
Staggered mode improves wiring density, while simplifying the processing step of the metal interconnection across multilayer intermediate dielectric layer.
As shown in figure 20, the intermetallic metal conducting wire 216 of the compound damascene structure of the utility model is formed in first and leads
One layer in the perforative intermediate dielectric layer of electric embolism 221, the arrangement of plain conductor horizontally in interconnection structure can be effectively improved
Density, and then reduce cost.
It should be noted that formation conductive plug and intermetallic metal are led arbitrarily between top dielectric and bottom dielectric layer
Line, and the structure of the intermetallic metal wire crossbar distribution in different damascene structures is included in the utility model, herein
It does not repeat one by one.
Embodiment three
As shown in figure 21, the present embodiment provides a kind of compound damascene structure, not with embodiment one and embodiment two
It is with place, the compound damascene structure of the present embodiment includes nine layers of intermediate dielectric layer, and each damascene structure wraps
Kuo Liangge branch, specific structure include:
Top dielectric 217, bottom dielectric layer 211 and between the top dielectric 217 and the bottom dielectric layer
The 9th intermediate dielectric layer 214i, the 8th intermediate dielectric layer 214h, the 7th intermediate dielectric layer 214g, the 6th centre between 211 are situated between
Electric layer 214f, the 5th intermediate dielectric layer 214e, the 4th intermediate dielectric layer 214d, third intermediate dielectric layer 214c, the first centre are situated between
It is big to be provided with first in the top dielectric 217 and each intermediate dielectric layer by electric layer 214a and the second intermediate dielectric layer 214b
Ma Shige structure 226 and the second damascene structure 227.
As shown in figure 21, the material of the top dielectric 217, each intermediate dielectric layer and the bottom dielectric layer 211 with
Embodiment one and embodiment two are identical, will not repeat them here.
Specifically, the first mutually isolated branch conductive structure 212a1, second are provided in the bottom dielectric layer 211
Branch conductive structure 212a2, third branch conductive structure 213a1 and the 4th branch conductive structure 213a2, in the present embodiment,
The first branch conductive structure 212a1, the second branch conductive structure 212a2, the third branch conductive structure 213a1
And the 4th branch conductive structure 213a2 is tungsten plug, is not limited to this embodiment.
As shown in figure 21, first damascene structure 226 includes the first branch 226a and the second branch 226b, described
First branch 226a is connected to the first branch conductive structure 212a1, and the second branch 226b is connected to described second point
Branch conductive structure 212a2.
Specifically, the first branch 226a and the second branch 226b includes being formed in the top dielectric
The first top metal conducting wire 223 in 217, with the first conductive plug 222 of 223 integrally connected of the first plain conductor, with
Second intermetallic metal conducting wire 230 of 222 bottom of the first conductive plug connection, with the second intermetallic metal conducting wire 223
4th conductive plug 231 of bottom integrally connected, the third intermetallic metal conducting wire being connect with 231 bottom of privates embolism
232 and the 5th conductive plug 233 with the bottom integrally connected of the third intermetallic metal conducting wire 232, first branch
The first top metal conducting wire 223 in 226a and the second branch 226b is connected with each other.
As shown in figure 21, second damascene structure 227 includes third branch 227a and the 4th branch 227b, described
Third branch 227a is connected to the third branch conductive structure 213a1, and the 4th branch 227b is connected to described 4th point
Branch conductive structure 213a2.
Specifically, the third branch 227a and the 4th branch 227b includes being formed in the top dielectric
The second top metal conducting wire 225 in 217, the second conduction with the bottom integrally connected of the second top metal conducting wire 225
Embolism 224, the first intermetallic metal conducting wire 216 being connect with 224 bottom of the second conductive plug and first intermetallic metal
In the third conductive plug 229 of the bottom integrally connected of conducting wire 216, the 4th connect with 229 bottom of third conductive plug
Between plain conductor 234, the 6th conductive plug 235 with the bottom integrally connected of the 4th intermetallic metal conducting wire 234, described the
The second top metal conducting wire 225 in three branch 227a and the 4th branch 227b is connected with each other.
Specifically, first conductive plug 222, the third conductive plug 229, the 4th conductive plug 231 and
6th conductive plug 235 extends through corresponding three layers of intermediate dielectric layer, second conductive plug 224 and described
5th conductive plug 233 extends through one layer of corresponding intermediate dielectric layer.
Specifically, in the present embodiment, it is connected in the second branch 226b and third branch 227a same described
Two conductive plugs of plain conductor are interspersed, and connect same institute in the first branch 226a and the 4th branch 227b
Two conductive plug aligned fashions of plain conductor are stated, and the second branch 226b and third branch 227a is in ladder
Shape, the second branch 226b are opposite with the ladder extending direction of the third branch 227a.
Specifically, first damascene structure and second damascene structure are in each conducting wire side wall to its bottom
The surface of conductive plug is all provided with barrier layer, is denoted as respectively: the first barrier layer 216a, the second barrier layer 223a, third stop
Layer 225a, the 4th barrier layer 230a, the 5th barrier layer 232a, the 6th barrier layer 234a.
Specifically, each layer of upper surface of each intermediate dielectric layer and the bottom dielectric layer 211 is respectively formed etching stop layer,
It is denoted as respectively: the first etching stop layer 214a ', the second etching stop layer 214b ', third etching stop layer 214c ', the 4th etching
Stop-layer 214d ', the 5th etching stop layer 214e ', the 6th etching stop layer 214f ', the 7th etching stop layer 214g ', the 8th
Etching stop layer 214h ', the 9th etching stop layer 214i ', the tenth etching stop layer 214j '.
It should be noted that adjacent any intermetallic metal conducting wire is described in the compound damascene structure of the utility model
Orthographic projection in bottom dielectric layer 211 can overlap, and therefore, the interconnection structure compared to Fig. 1, the utility model can greatly save core
Piece area, and then improve integrated level, reduce cost.
In conclusion the utility model provides a kind of compound double damask structure, pass through compound dual damascene work
Skill substitutes multilayer Damascus technics, greatly simplifies processing step, improves production efficiency；And the metal by being interspersed interconnects
Structure realizes the raising of wiring density, and then greatlys save cost.So the utility model effectively overcome it is in the prior art
Various shortcoming and have high industrial utilization value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (17)
1. a kind of compound double damask structure characterized by comprising
Top dielectric, bottom dielectric layer and between the top dielectric and the bottom dielectric layer at least two
Layer intermediate dielectric layer, is provided with the first damascene structure in the top dielectric and at least two layers of intermediate dielectric layer
And second damascene structure；
First damascene structure includes the first top metal conducting wire being formed in the top dielectric, and with institute
The first conductive plug of the first top metal conducting wire integrally connected is stated, first conductive plug is described among at least two layers
Dielectric layer；
Second damascene structure include the second top metal conducting wire being at least partly formed in the top dielectric,
With the second conductive plug of the bottom integrally connected of the second top metal conducting wire and with second conductive plug bottom
Connection the first intermetallic metal conducting wire, the first intermetallic metal conducting wire be formed in first conductive plug it is perforative it is described in
Between not being electrically connected in one layer and with first conductive plug wherein in dielectric layer, second conductive plug through it is described extremely
Wherein one layer and it is located at different layers with the first intermetallic metal conducting wire in few two layers of intermediate dielectric layer.
2. compound double damask structure according to claim 1, it is characterised in that: at least two layers of intermediate dielectric layer
Including two layers of intermediate dielectric layer, the bottom of first conductive plug is connected to the top of the bottom dielectric layer；Described second
Conductive plug runs through wherein one layer of two layers of intermediate dielectric layer, and the first intermetallic metal conducting wire is formed in two layers of intermediate dielectric layer
Another layer in, the bottom of the first intermetallic metal conducting wire is connected to the top of the bottom dielectric layer.
3. compound double damask structure according to claim 1, it is characterised in that: at least two layers of intermediate dielectric layer
Including three layers of intermediate dielectric layer；First conductive plug runs through three layers of intermediate dielectric layer, first conductive plug
Bottom is connected to the top of the bottom dielectric layer；Second damascene structure further includes leading with first intermetallic metal
The third conductive plug of the bottom integrally connected of line, second conductive plug, the first intermetallic metal conducting wire and described
Three conductive plugs successively extend through the intermediate dielectric layer of a respective layer, and the bottom of the third conductive plug is connected to
The top of the bottom dielectric layer.
4. compound double damask structure according to claim 1, it is characterised in that: be provided in the bottom dielectric layer
Mutually isolated the first conductive structure and the second conductive structure, first damascene structure are connected to the described first conductive knot
Structure, second damascene structure are connected to second conductive structure.
5. compound double damask structure according to claim 4, it is characterised in that: first conductive structure and described
Second conductive structure is tungsten plug.
6. compound double damask structure according to claim 4, it is characterised in that: first conductive structure and described
Second conductive structure is metal line.
7. compound double damask structure according to claim 1, it is characterised in that: first damascene structure and
Orthographic projection of the arbitrary neighborhood double layer of metal conducting wire in the bottom dielectric layer has overlapping in second damascene structure
Region.
8. compound double damask structure according to claim 1, it is characterised in that: first damascene structure and
Second damascene structure is all provided with barrier layer on the surface of each conducting wire side wall to its bottom conductive embolism.
9. compound double damask structure according to claim 1, it is characterised in that: at least two layers of intermediate dielectric layer
And each layer of upper surface of the bottom dielectric layer is each formed with etching stop layer.
10. compound double damask structure according to claim 1, it is characterised in that: first damascene structure
Including the first branch and the second branch, second damascene structure includes third branch and the 4th branch；Described first point
Conductive plug is respectively provided in the branch intermediate dielectric layer corresponding with second branch or is respectively provided with plain conductor, the third
Conductive plug is respectively provided in branch's intermediate dielectric layer corresponding with the 4th branch or is respectively provided with plain conductor, and described
Arbitrary neighborhood double layer of metal conducting wire is in the bottom dielectric layer in first damascene structure and second damascene structure
On orthographic projection have overlapping region.
11. compound double damask structure according to claim 10, it is characterised in that: be arranged in the bottom dielectric layer
There are first mutually isolated branch's conductive structure, second branch's conductive structure, third branch conductive structure and the 4th branch conductive
Structure, first branch are connected to first branch conductive structure, and second branch is connected to second branch and leads
Electric structure, the third branch are connected to third branch conductive structure, and the 4th branch is connected to the 4th branch
Conductive structure.
12. compound double damask structure according to claim 11, it is characterised in that: the first branch conduction knot
Structure, second branch conductive structure, third branch conductive structure and the 4th branch's conductive structure are tungsten plug.
13. compound double damask structure according to claim 11, it is characterised in that: the first branch conduction knot
Structure, second branch conductive structure, third branch conductive structure and the 4th branch's conductive structure are metal line.
14. compound double damask structure according to claim 10, it is characterised in that: second branch and described
Two conductive plugs that the same plain conductor is connected in three branches are interspersed, first branch and the 4th branch
Two conductive plug aligned fashions of the middle same plain conductor of connection.
15. compound double damask structure according to claim 14, it is characterised in that: second branch and described
Three branches are stepped, and second branch is opposite with the ladder extending direction of the third branch.
16. compound double damask structure according to claim 10, it is characterised in that: at least two layers of interlevel dielectric
Layer includes nine layers of intermediate dielectric layer；First branch and second branch include being formed in the top dielectric
First top metal conducting wire and the first conductive plug of the first top metal conducting wire integrally connected and first conduction
Second intermetallic metal conducting wire of embolism bottom connection, the 4th conduction with the bottom integrally connected of the second intermetallic metal conducting wire
Embolism, the third intermetallic metal conducting wire being connect with the 4th conductive plug bottom and the bottom with the third intermetallic metal conducting wire
The first top metal conducting wire in 5th conductive plug of portion's integrally connected, first branch and second branch mutually interconnects
It connects；The third branch and the 4th branch include the second top metal conducting wire being formed in the top dielectric,
It is connect with the second conductive plug of the bottom integrally connected of the second top metal conducting wire, with second conductive plug bottom
The first intermetallic metal conducting wire, with the third conductive plug of the bottom integrally connected of the first intermetallic metal conducting wire, with it is described
The bottom integrally connected of the 4th intermetallic metal conducting wire and the 4th intermetallic metal conducting wire of third conductive plug bottom connection
The second top metal conducting wire in 6th conductive plug, the third branch and the 4th branch is connected with each other；Wherein, described
First conductive plug, the third conductive plug, the 4th conductive plug and the 6th conductive plug extend through correspondence
Three layers of intermediate dielectric layer, second conductive plug and the 5th conductive plug extend through one layer it is corresponding described
Intermediate dielectric layer.
17. compound double damask structure according to claim 16, it is characterised in that: second in second branch
Intermetallic metal conducting wire has with orthographic projection of the first intermetallic metal conducting wire in the third branch in the bottom dielectric layer
Overlapping region.
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| US20230127860A1 (en) * | 2021-10-26 | 2023-04-27 | Nanya Technology Corporation | Semiconductor device with redistribution structure and method for fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20230127860A1 (en) * | 2021-10-26 | 2023-04-27 | Nanya Technology Corporation | Semiconductor device with redistribution structure and method for fabricating the same |
| US11830865B2 (en) * | 2021-10-26 | 2023-11-28 | Nanya Technology Corporation | Semiconductor device with redistribution structure and method for fabricating the same |
| US20240047447A1 (en) * | 2021-10-26 | 2024-02-08 | Nanya Technology Corporation | Method for fabricating semiconductor device with redistribution structure |
| US12237318B2 (en) * | 2021-10-26 | 2025-02-25 | Nanya Technology Corporation | Method for fabricating semiconductor device with redistribution structure |
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