CN208586366U - Wafer plating process chamber - Google Patents
Wafer plating process chamber Download PDFInfo
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- CN208586366U CN208586366U CN201821286929.5U CN201821286929U CN208586366U CN 208586366 U CN208586366 U CN 208586366U CN 201821286929 U CN201821286929 U CN 201821286929U CN 208586366 U CN208586366 U CN 208586366U
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- 238000007747 plating Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000008569 process Effects 0.000 title claims abstract description 27
- 239000003792 electrolyte Substances 0.000 claims abstract description 38
- 230000007246 mechanism Effects 0.000 claims abstract description 38
- 238000005341 cation exchange Methods 0.000 claims description 17
- 239000012528 membrane Substances 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 11
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 239000011553 magnetic fluid Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 3
- 238000001727 in vivo Methods 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 28
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 28
- 239000011574 phosphorus Substances 0.000 abstract description 28
- 239000013049 sediment Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 35
- 229910052802 copper Inorganic materials 0.000 description 21
- 239000010949 copper Substances 0.000 description 21
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000004087 circulation Effects 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- BYACHAOCSIPLCM-UHFFFAOYSA-N 2-[2-[bis(2-hydroxyethyl)amino]ethyl-(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)CCN(CCO)CCO BYACHAOCSIPLCM-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical group C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- Electroplating Methods And Accessories (AREA)
Abstract
The utility model relates to semiconductor equipment manufacturing fields, a kind of wafer plating process chamber are disclosed, for wafer to be electroplated, comprising: cavity, for accommodating electrolyte；Support, support are arranged along the circumferential of inner sidewall of cavity, are used for support wafer；Anode electrode, anode electrode is within the cavity and is set in parallel with plane locating for support, to be oppositely arranged with wafer；High resistance virtual anodes, are set in cavity, between anode electrode and support；And rotating mechanism, setting anode electrode lower section, for driving anode electrode to rotate.The utility model by being arranged rotating mechanism in the cavity, and anode electrode is mounted on rotating mechanism, the intracorporal electrolyte of chamber is set to generate undercurrent, to which excessive phosphorus sediment be taken away, the thickness for controlling the phosphorus film of anode electrode surface fluctuates in the reasonable scope, guarantee the degree of purity of electrolyte and reduce the variation of impedance, so that it is guaranteed that the efficiency and quality of plating.
Description
Technical field
The utility model relates to semiconductor equipment manufacturing field, in particular to a kind of wafer plating process chamber.
Background technique
In semiconductor fabrication process, wafer can be electrically connected to by conductive lead wire, using electroplating technology deposited metal
The metal wire in metal layer (also known as metallic film) is formed in patterned groove on to wafer, such as forms copper metal line
(also known as copper metal conducting wire) or silver metal line (also known as silver metal conducting wire).
In the prior art, shown in Figure 1 in order to form copper metal line in crystal column surface, it is usually sulphur in electroplate liquid
It being carried out in the environment of sour copper, the just extremely anode of external power supply, places the copper billet for plating, the cathode of power supply is cathode, and
Place wafer.In order to avoid the copper billet consumption of anode in the plating process is too fast, and the speed of plating is controlled, it will usually
Phosphorus is adulterated in copper billet, wherein the content of phosphorus accounts for the 0.01% of copper billet.After adding phosphorus, in the plating process, due to the copper of anode
Block surface is coated with one layer of phosphorus film, so that the speed of copper billet oxidation consumption slows down, ensures that and is formed on wafer
The quality of copper metal line.
However add phosphorus in copper billet and also bring a series of problem, for example, in the long-term of copper-bath and copper billet
During ionization is electroplated, it will form excessive phosphorus sediment in the bottom of chamber and the surface of copper billet, influence the copper billet of anode
Oxidation reaction occurs, the degree of purity so as to cause copper-bath declines and change the impedance of copper-bath, and then influences
The quality for the copper metal line that crystal column surface is formed, reduces the yields of plating.
Utility model content
The utility model is to propose in view of the above problems, and its purpose is to provide a kind of wafer plating process chamber, energy
Enough remove excessive phosphorus sediment.
According to the utility model, by setting rotating mechanism and anode electrode (copper billet) is mounted on rotating mechanism,
Undercurrent is generated in electrolyte, reduces the phosphorus sediment on anode electrode, so that it is guaranteed that the efficiency and quality of plating.
Specifically, a kind of wafer plating process chamber provided by the utility model, for wafer to be electroplated, comprising: chamber
Body, for accommodating electrolyte；Support, support are arranged along the circumferential of inner sidewall of cavity, are used for support wafer；Anode electrode,
Anode electrode is within the cavity and is set in parallel with plane locating for support, to be oppositely arranged with wafer；High resistance is virtual
Anode is set in cavity, between anode electrode and support；And rotating mechanism, setting anode electrode lower section are used for band
Dynamic anode electrode rotation.
Compared to existing technologies, the utility model by being arranged rotating mechanism in the cavity, and anode electrode is pacified
On rotating mechanism, the intracorporal electrolyte of chamber is made to generate undercurrent, so that excessive phosphorus sediment be taken away, controls anode electrode
The thickness of the phosphorus film on surface fluctuates in the reasonable scope, guarantees the degree of purity of electrolyte and reduces the variation of impedance, thus really
Protect the efficiency and quality of plating.
Preferably, rotating mechanism includes chassis, shaft and driving device, shaft one end is fixedly connected on chassis, separately
One end is connect with driving device.
Chassis generallys use electrically conductive material, for installing and fixing anode electrode, and anode electrode is driven to rotate
Generate undercurrent.Driving device drives chassis rotation by shaft, and controls the revolving speed on chassis, so that the undercurrent to formation is controlled
System, and then the quality that the plain conductor that plating is formed will be improved.
Further, preferably, rotating mechanism further includes seal assembly, seal assembly is mounted in shaft, can be right
Shaft and cavity junction are sealed.
When being contained with electrolyte in cavity, and installing rotating mechanism, in order to install shaft, meeting aperture on cavity causes
The leakproofness of cavity declines.Seal assembly, which is arranged, to be sealed the junction of shaft and aperture, reduce electrolyte from chamber
The probability leaked in vivo, to provide good plating conditions.
Further, preferably, seal assembly is the magnetic fluid component being mounted on cavity, magnetic fluid component coaxial sleeve
It is located in shaft.
Magnetic fluid component can either play the effect of excellent sealing, while shaft can be made to transfer the motion to chassis again,
To generate undercurrent in electrolyte.
Further, preferably, further including the controller with driving device communication connection, can revolving speed to chassis into
Row control.
Controller can control the power of driving device, to control the revolving speed on chassis.Required according to different plating and
Degree of purity of electrolyte etc. controls the revolving speed on chassis, to guarantee the thickness of the phosphorus film of anode electrode surface.
In addition, can be adjusted to the temperature of anode electrode preferably, further include the cooler being connect with anode electrode
Section.
In the plating process, anode electrode can occur oxidation reaction and discharge heat, increase the temperature of electrolyte, cooling
The heat that device can absorb anode electrode release is conducive to mention so that the temperature of anode electrode and electrolyte be adjusted
The yields of high wafer plating.
Further, preferably, being additionally provided with fixing piece on chassis, anode electrode can be fixed.
Fixing piece is for being fixed installation to anode electrode, it is ensured that the rotary course Anodic electrode on chassis will not be from
It falls off on chassis, the oxidation reaction of anode electrode is normally carried out.
In addition, preferably, further including the cation-exchange membrane being arranged between high resistance virtual anodes and anode electrode
And nozzle, for being filtered to the ion in electrolyte, nozzle is arranged in cation-exchange membrane and anode cation-exchange membrane
Between electrode, for injecting electroplate liquid into cavity.
Cation-exchange membrane can stop the ion in electrolyte, and metal ion is enable to pass through cation exchange
Film, and additive is limited in the side of cation-exchange membrane, so that anode loop and cathode return circuit be separated.Nozzle will return
Filtered electrolyte is transmitted back to cavity and is utilized again in road.
In addition, the gradient of cavity is adjusted preferably, be additionally provided with cavity regulating mechanism on cavity.
By the adjustment of cavity regulating mechanism, make the inclination of cavity at an angle, at this point, the undercurrent that rotating mechanism generates
More easily phosphorus sediment is taken away, to control the content of phosphorus in anode electrode, is further ensured that on wafer and yields is electroplated.
Further, preferably, cavity regulating mechanism includes the mechanical arm being mounted on cavity and connects with mechanical arm
The cylinder connect, cylinder drives mechanical arm so that cavity tilts.
Cylinder can drive mechanical arm according to the degree of purity of the content of phosphorus in anode electrode and electrolyte, thus to chamber
The gradient of body is adjusted, and further improves the effect being electroplated in crystal column surface.
Detailed description of the invention
Fig. 1 is the schematic diagram of the wafer plating process chamber of the utility model first embodiment；
Fig. 2 is the anode loop of the utility model first embodiment and the schematic diagram of cathode return circuit；
Fig. 3 is the schematic diagram that anode electrode is installed by fixing piece of the utility model first embodiment；
Fig. 4 is the signal of the wafer plating process chamber equipped with cavity regulating mechanism of the utility model first embodiment
Figure.
Description of symbols:
1- cavity；2- support；3- high resistance virtual anodes；4- anode electrode；5- rotating mechanism；The chassis 5a-；5a1- is fixed
Part；5b- shaft；5c- driving device；5d- seal assembly；6- cooler；7- cation-exchange membrane；8- nozzle；9- cavity is adjusted
Mechanism；9a- mechanical arm；9b- cylinder；10- anode loop；10a- first flow inductor；The first liquid pump of 10b-；The first mistake of 10c-
Filter；11- cathode return circuit；11a- second flow inductor；The second liquid pump of 11b-；The second filter of 11c-；12- wafer.
Specific embodiment
With reference to the accompanying drawings of the specification, the utility model is described in further detail.It is schematically simple in attached drawing
Change shows the structure etc. of wafer plating process chamber.
Embodiment one
A kind of wafer plating process chamber of the utility model, it is shown in Figure 1 for wafer 12 to be electroplated, comprising:
Cavity 1, for accommodating electrolyte；Support 2, support 2 are arranged along the circumferential of inner sidewall of cavity 1, are used for support wafer 12；Sun
Pole electrode 4, anode electrode 4 are located in cavity 1 and are set in parallel with plane locating for support 2, so that opposite with wafer 12 set
It sets；High resistance virtual anodes 3 are set in cavity 1, between anode electrode 4 and support 2；And rotating mechanism 5, setting
4 lower section of anode electrode, for driving anode electrode 4 to rotate.
In simple terms, in order in the plain conductor of 12 surface of wafer formation high-quality, it will usually place wafer 12
Using it as cathode in electrolyte, metal, and the concentration of strict control electrolyte, degree of purity in the plating process are placed in anode
And impedance etc..
Specifically exist, in present embodiment, support 2 and the cathode with external power supply (not shown) are provided in cavity 1
Be connected, can support wafer 12 and make wafer 12 charge.Also, in order to control the speed of plating, in the lower section of support 2
High resistance virtual anodes 3 are additionally provided with, since the resistance value of the resistance of high resistance virtual anodes 3 is higher than the resistance value of other resistance, because
This can be such that the metal layer of the center of wafer 12 and the thickness difference of the metal layer of the marginal position in wafer 12 declines, thus
Improve the quality for the conducting wire that plating is formed.
In electroplating technology, anode electrode 4 would generally be using metal materials such as copper or silver, in the present embodiment, with sun
Pole electrode 4 is illustrated for copper billet, therefore in order to form copper metal layer on 12 surface of wafer, the electrolyte used is molten for copper sulphate
Liquid.
In the background technology it has been noted that in order to reduce the depletion rate of copper billet, it will usually phosphorus is added in anode copper billet,
But after long-term use, phosphorus sediment can accumulate on the bottom in cavity 1 and anode copper billet the non-defective unit for influencing plating
Rate.After rotating mechanism 5 are arranged under anode copper billet, rotating mechanism 5 can be rotated when being electroplated with preset revolving speed,
To generate undercurrent in copper sulfate solution, and then the phosphorus sediment of generation is taken away into anode copper block surface, keeps phosphorus in anode copper
Accounting in block fluctuates between 0.03%~0.07%.
In addition, in the present embodiment, referring to shown in 1 figure and Fig. 2, electroplating technology is intracavitary, and to be additionally provided with high resistance virtually positive
Cation-exchange membrane 7 between pole 3 and anode electrode 4 can be in electrolyte for being filtered to the ion in electrolyte
Ion stopped, so that metal ion is passed through cation-exchange membrane 7, and additive be limited in cation-exchange membrane 7
Side, so that anode loop 10 and cathode return circuit 11 be separated and carry out different circulations.Also, in cation-exchange membrane
Nozzle 8 is additionally provided between 7 and anode electrode 4, it, can be to filtered electrolyte again for injecting electroplate liquid into cavity 1
It is utilized.Specifically, anode loop 10 includes part between cation-exchange membrane 7 and anode electrode 4, first in cavity 1
Flow inductor 10a, the first liquid pump 10b and first filter 10c.Wherein, the first liquid pump 10b makes the liquid in anode loop 10
Body circulation flowing, to enable the electrolyte in cavity 1 to take away the phosphorus sediment to fall off out of cavity 1, then through the first mistake
Filter 10c filtering, last pure electrolyte flow back to the part in cavity 1 between cation-exchange membrane 7 and anode electrode 4.Yin
Pole circuit 11 includes the part in cavity 1 between cation-exchange membrane 7 and wafer 12, second flow inductor 11a, the second liquid pump
11b and the second filter 11c, to realize that electrolyte recycles in anode loop 10.
In the present embodiment, referring to shown in figure, rotating mechanism 5 includes chassis 5a, shaft 5b and driving device 5c, is turned
The one end axis 5b is fixedly connected on chassis 5a, and the other end is connect with driving device 5c.
In order to enable oxidation reaction, which occurs, for anode copper billet forms copper ion, chassis 5a generallys use electrically conductive material.
Certain chassis 5a can also use other materials, then the position setting binding post of anode electrode 4 be installed on the 5a of chassis, and the bottom of at
Conducting wire is buried in disk 5a and shaft 5b, equally also can be realized the purpose for charging anode copper billet.Chassis in the present embodiment
The shape of 5a be it is discoid, certain chassis 5a can also use other shapes, as long as its rotation when can be formed in the electrolytic solution
Undercurrent.
Wherein, in the present embodiment, shown in Figure 3, since anode copper billet is mounted on chassis 5a by fixing piece 5a1
On, therefore anode copper billet can be rotated with chassis 5a.To which while chassis 5a is rotated and generated undercurrent, anode copper billet can
It is continued for oxidation reaction and copper ion is provided.Also, it is constantly consumed since oxidation reaction occurs for anode copper billet,
From the point of view of material loss, need to replace anode copper billet when a period of time is electroplated.It is examined from fixed fastness
Consider, common fixing piece 5a1 is fixed screw, and on chassis, screw hole is arranged in the corresponding position of 5a, and anode copper billet is screwed
On the 5a of chassis.And anode copper billet can be to be multiple, so as to be spliced into round pie.
Driving device 5c drives chassis 5a rotation by shaft 5b, and controls the revolving speed of chassis 5a, thus to the dark of formation
Stream is controlled, and then the quality that will improve the plain conductor that plating is formed.
Further, in the present embodiment, shown in Figure 1, since the outside of cavity 1, bottom is arranged in control mechanism
The inside of cavity 1 is arranged in disk 5a, therefore when installing rotating mechanism 5, in order to install shaft 5b can the aperture on cavity 1, chamber
Cause the leakproofness of cavity 1 to decline, and be contained with a large amount of electrolyte in seal chamber, so rotating mechanism 5 further includes seal assembly
5d, seal assembly 5d are mounted on shaft 5b, can be sealed to shaft 5b and 1 junction of cavity.
Seal assembly 5d is mainly used for being sealed shaft 5b and tapping, reduces electrolyte from 1 internal leakage of cavity
Probability, to provide good plating environment.Specifically, the seal assembly 5d used in present embodiment is is mounted on cavity
Magnetic fluid component on 1, magnetic fluid component are coaxially set on shaft 5b.
The sealing elements such as sealing ring or sealant, can be sealed junction, thus to the sealing performance for guaranteeing container,
But shaft 5b, which is similarly fixed by seal assembly 5d and is difficult to rotate, reaches chassis 5a.It is true while sealing in order to solve
The problem of protecting transmission, in the present embodiment, seal assembly 5d can use magnetic fluid component, can either play excellent sealing
Effect, while 5a rotation in chassis can be made to generate undercurrent again.
In addition, in the present embodiment, rotating mechanism 5 is additionally provided with the controller with driving device 5c communication connection, energy
It is enough that the revolving speed of chassis 5a is controlled.
Controller can control the power of driving device 5c, to control the revolving speed of chassis 5a.It is wanted according to different plating
The revolving speed of the control such as degree of purity of summation electrolyte chassis 5a, to guarantee the thickness of the phosphorus film on 4 surface of anode electrode.
In addition, further include the cooler 6 being connect with anode electrode 4 in the present embodiment, it can be to anode electrode 4
Temperature is adjusted.
In the plating process, anode electrode 4 can occur oxidation reaction and discharge heat, increase the temperature of electrolyte, cold
But device 6 can absorb the heat of the release of anode electrode 4, to the temperature of anode electrode 4 and electrolyte be adjusted, favorably
In the yields for improving the plating of wafer 12.
In summary it considers, anode electrode 4 is mounted on by the utility model by the way that rotating mechanism 5 is arranged in cavity 1
On rotating mechanism 5, the electrolyte in cavity 1 is set to generate undercurrent, so that excessive phosphorus sediment is taken away cavity 1 and was carried out
Filter, pure electrolyte is sent back in cavity 1.To control 4 surface of anode electrode phosphorus film thickness wave in the reasonable scope
It is dynamic, guarantee the degree of purity of electrolyte and reduce the variation of impedance, so that it is guaranteed that the efficiency and quality of plating.
Embodiment two
The second embodiment of the utility model provides a kind of wafer plating process chamber, and second embodiment is to first
Embodiment is further improved, and is mainly theed improvement is that, shown in Figure 4 in present embodiment, is also set up on cavity 1
There is cavity regulating mechanism 9,1 gradient of cavity is adjusted.
By the adjustment of cavity regulating mechanism 9, make the inclination of cavity 1 at an angle, at this point, what rotating mechanism 5 generated
Undercurrent is easier phosphorus sediment taking away cavity 1, to control the content of phosphorus in anode electrode 4, is further ensured that in wafer 12
Upper plating yields.
In the present embodiment, cavity regulating mechanism 9 include the mechanical arm 9a that is mounted on cavity 1 and with mechanical arm 9a
The cylinder 9b of connection, cylinder 9b drive mechanical arm 9a to tilt cavity 1.Cylinder 9b can according to the content of phosphorus in anode electrode 4 with
And the degree of purity of electrolyte drives mechanical arm 9a, so that the gradient of cavity 1 be adjusted, further improves in 12 table of wafer
The effect of face plating.
Specifically, shown in Figure 4, when the phosphorus sediment for finding 4 surface of anode electrode or 1 bottom of cavity is excessive, machine
Tool arm 9a extends under the driving of cylinder 9b, so that cavity 1 be made to tilt.It is worth noting that, when cavity 1 tilts, shaft 5b
Identical angle is tilted with cavity 1, ensures that chassis 5a being capable of normal rotation with this.Certain cavity regulating mechanism 9 can also use
Other modes are arranged on cavity 1, as long as can ensure that chassis 5a is rotated while cavity 1 tilts.
It will be understood by those skilled in the art that in above-mentioned each embodiment, in order to keep reader more preferably geographical
It solves the application and proposes many technical details.But even if without these technical details and based on the respective embodiments described above
Various changes and modifications can also realize each claim of the application technical solution claimed substantially.Therefore, in reality
In, can to above embodiment, various changes can be made in the form and details, without departing from the spirit of the utility model
And range.
Claims (10)
1. a kind of wafer plating process chamber, for wafer to be electroplated characterized by comprising
Cavity, for accommodating electrolyte；
Support, the support are arranged along the circumferential of inner sidewall of the cavity, are used for support wafer；
Anode electrode, the anode electrode are located in the cavity and are set in parallel with plane locating for the support, thus
It is oppositely arranged with the wafer；
High resistance virtual anodes are set in the cavity, between the anode electrode and the support；
And rotating mechanism, it is arranged below the anode electrode, for driving the anode electrode to rotate.
2. wafer plating process chamber according to claim 1, which is characterized in that the rotating mechanism includes chassis, shaft
And driving device, described shaft one end are fixedly connected on the chassis, the other end is connect with the driving device.
3. wafer plating process chamber according to claim 2, which is characterized in that the rotating mechanism further includes sealing group
Part, the seal assembly are mounted in the shaft, can be sealed to the shaft and the cavity junction.
4. wafer plating process chamber according to claim 3, which is characterized in that the seal assembly is to be mounted on the chamber
Magnetic fluid component on body, the magnetic fluid component are coaxially set in the shaft.
5. the wafer plating process chamber according to any one of claim 2-4, which is characterized in that further include and the drive
The controller of dynamic device communication connection, can control the revolving speed on the chassis.
6. the wafer plating process chamber according to any one of claim 2-4, which is characterized in that further include and the sun
The cooler of pole electrode connection, can be adjusted the temperature of the anode electrode.
7. wafer plating process chamber according to claim 6, which is characterized in that be additionally provided with fixation on the chassis
The anode electrode can be fixed in part.
8. wafer plating process chamber according to claim 1, which is characterized in that further include that setting is virtual in the high resistance
Cation-exchange membrane and nozzle between anode and the anode electrode, the cation-exchange membrane are used for in the electrolyte
Ion be filtered, the nozzle is arranged between the cation-exchange membrane and the anode electrode, for the chamber
Injection electroplate liquid in vivo.
9. wafer plating process chamber according to claim 1, which is characterized in that be additionally provided with cavity tune on the cavity
Mechanism is saved, the gradient of the cavity is adjusted.
10. wafer plating process chamber according to claim 9, which is characterized in that the cavity regulating mechanism includes installation
Mechanical arm on the cavity and the cylinder connecting with the mechanical arm, the cylinder drive the mechanical arm so that described
Cavity inclination.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821286929.5U CN208586366U (en) | 2018-08-09 | 2018-08-09 | Wafer plating process chamber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821286929.5U CN208586366U (en) | 2018-08-09 | 2018-08-09 | Wafer plating process chamber |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112626582A (en) * | 2020-11-17 | 2021-04-09 | 威科赛乐微电子股份有限公司 | Method for improving uniformity of electroplated metal film |
| CN112701072A (en) * | 2021-03-25 | 2021-04-23 | 西安奕斯伟硅片技术有限公司 | Wafer processing apparatus and wafer defect evaluation method |
| CN112962129A (en) * | 2021-02-03 | 2021-06-15 | 广州兴金五金有限公司 | Wafer double-sided copper electroplating thick film equipment |
| CN115468377A (en) * | 2022-09-15 | 2022-12-13 | 洛阳大生新能源开发有限公司 | Cooling device is used in electrolyte preparation |
| CN116623263A (en) * | 2023-07-24 | 2023-08-22 | 深圳市顺益丰实业有限公司 | Adjusting device for film coating uniformity of semiconductor device |
-
2018
- 2018-08-09 CN CN201821286929.5U patent/CN208586366U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112626582A (en) * | 2020-11-17 | 2021-04-09 | 威科赛乐微电子股份有限公司 | Method for improving uniformity of electroplated metal film |
| CN112626582B (en) * | 2020-11-17 | 2022-05-24 | 威科赛乐微电子股份有限公司 | Method for improving uniformity of electroplated metal film |
| CN112962129A (en) * | 2021-02-03 | 2021-06-15 | 广州兴金五金有限公司 | Wafer double-sided copper electroplating thick film equipment |
| CN112701072A (en) * | 2021-03-25 | 2021-04-23 | 西安奕斯伟硅片技术有限公司 | Wafer processing apparatus and wafer defect evaluation method |
| CN115468377A (en) * | 2022-09-15 | 2022-12-13 | 洛阳大生新能源开发有限公司 | Cooling device is used in electrolyte preparation |
| CN115468377B (en) * | 2022-09-15 | 2023-08-29 | 洛阳大生新能源开发有限公司 | Cooling device for electrolyte preparation |
| CN116623263A (en) * | 2023-07-24 | 2023-08-22 | 深圳市顺益丰实业有限公司 | Adjusting device for film coating uniformity of semiconductor device |
| CN116623263B (en) * | 2023-07-24 | 2023-10-31 | 深圳市顺益丰实业有限公司 | Adjusting device for film coating uniformity of semiconductor device |
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