CN208545490U - A kind of resonant cavity for chemistry for gas phase depositing diamond film - Google Patents
A kind of resonant cavity for chemistry for gas phase depositing diamond film Download PDFInfo
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- CN208545490U CN208545490U CN201821286148.6U CN201821286148U CN208545490U CN 208545490 U CN208545490 U CN 208545490U CN 201821286148 U CN201821286148 U CN 201821286148U CN 208545490 U CN208545490 U CN 208545490U
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- resonant cavity
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- diamond film
- deposition table
- chemistry
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- 238000000151 deposition Methods 0.000 title claims abstract description 51
- 239000010432 diamond Substances 0.000 title claims abstract description 28
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 28
- 230000008021 deposition Effects 0.000 claims abstract description 39
- 239000010453 quartz Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000007789 sealing Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 11
- 230000000740 bleeding effect Effects 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The utility model discloses a kind of resonant cavities for chemistry for gas phase depositing diamond film, including resonant cavity ontology, quartz window, deposition table, mode converter, the resonant cavity body upper part is cylindrical, lower part is ChamferCyl shape, the angle of the ChamferCyl adjacent surface is 135 °, the resonant cavity body upper part side vertical is fixed with electronic positioning slide unit, annular helical circle is fixed on the sliding block of electronic positioning slide unit, the annular helical circle and resonant cavity ontology are coaxial, the deposition table be located at resonant cavity body interior and coaxially, the resonant cavity body bottom portion is equipped with circular open concentric with it, the circular open is fixedly connected with microwave input structure, the quartz window is circular ring shape, between deposition table and resonant cavity ontology bottom surface, and it is connect with deposition table and resonant cavity ontology sealing bottom surface.The utility model can reduce plasma loss and microwave input power with higher by the ingehious design to resonant cavity.
Description
Technical field
The utility model relates to a kind of microwave cavities, specifically, being to be related to one kind for chemical vapor deposition Buddha's warrior attendant
The resonant cavity of stone film.
Background technique
Chemical vapour deposition technique is the chemical reaction for passing through reaction gas, deposits solid-state material in matrix surface, is a kind of
The good method of uniform thin-film material is prepared, wherein heat wire method, DC arc jet method, microwave plasma method have been applied successfully
In the preparation of diamond film.
In the preparation method of a variety of diamond films, microwave plasma CVD (MPCVD) method is to prepare
The prefered method of high quality diamond film possesses other preparation methods incomparable controllability and cleanliness.Its plated film
Process is completed by microwave energy provocative reaction gas formation plasma, both without being polluted caused by electrode discharge,
Also without polluting caused by wire evaporation, it is suitable for the preparation of high quality diamond film.
Between the past few decades, MPCVD method prepares high quality diamond membrane technology and achieves
Develop on a large scale very much, largely has benefited from the development of MPCVD method diamond film deposition device.?
In MPCVD method diamond film deposition device, quartz microwave window both play transmission microwave enter it is humorous
The effect of vibration chamber, and play the vacuum-packed effect of resonant cavity.However, if quartz microwave window apart from plasma too
Closely, it can be highly susceptible to the etching of plasma under high power, limit MPCVD method diamond
The level of film deposition apparatus microwave input power.In addition, the method for controlling plasma form in the prior art is lifting deposition
Platform, but liftable deposition table is unfavorable for the realization of resonant cavity air-tightness, but also will cause plasma loss.
Utility model content
The purpose of this utility model is to provide a kind of resonant cavities for chemistry for gas phase depositing diamond film, by it
The ingehious design of structure can reduce plasma loss and microwave input power with higher.
To achieve the above object, the technical solution adopted in the utility model is as follows:
A kind of resonant cavity for chemistry for gas phase depositing diamond film, including resonant cavity ontology, quartz window, deposition table, mould
Formula converter, the resonant cavity body upper part are cylindrical, and lower part is ChamferCyl shape, the ChamferCyl adjacent surface
Angle be 135 °, the resonant cavity body upper part side vertical is fixed with electronic positioning slide unit, the sliding block of electronic positioning slide unit
On be fixed with annular helical circle, the annular helical circle and resonant cavity ontology are coaxial, and the deposition table is located in resonant cavity ontology
Portion and coaxially, the resonant cavity body bottom portion is equipped with circular open concentric with it, and the circular open is fixedly connected with
Microwave input structure, the quartz window is circular ring shape, between deposition table and resonant cavity ontology bottom surface, and with deposition table and humorous
The chamber ontology sealing bottom surface that shakes connects.
Further, the resonant cavity ontology is made of double-layer stainless steel, and inner space forms water-cooling channel.
Further, the resonant cavity bodies top is equipped with air inlet, and bottom is equipped with bleeding point, the air inlet and bleeding point
It is connected to the cavity of resonant cavity body interior.
Further, the resonant cavity bodies top is equipped with water outlet, and bottom is equipped with water filling port, the water filling port and water outlet
It is connected to the water-cooling channel.
Further, the microwave input structure includes waveguide and mode converter, the mode converter and resonant cavity
Ontology is coaxial.
Further, the deposition table (3) is hollow structure, and its underpart is sealedly connected with conduit, conduit lower end and resonant cavity
Body bottom portion is tightly connected, and the conduit is connected to the water-cooling channel of cavity and resonant cavity ontology inside deposition table.
The electronic positioning slide unit is the prior art, and this will not be repeated here.
Compared with prior art, the utility model has the following beneficial effects:
(1) the annular helical circle of the utility model can move up and down, and control the shape of plasma by magnetic field with this
State increases depositional area, enables a system to generate greater area of diamond film.
(2) the utility model quartz window is set to below deposition table, far from plasma, reduces quartz window by plasma
The risk of body etching, improves the service life of quartz window.
(3) angle is 135 degree between the side wall of the utility model resonant cavity and side wall and bottom surface, being capable of microwave reflection
Above to deposition table, results from plasma above deposition table, be conducive to deposition of the diamond on substrate.
Detailed description of the invention
Fig. 1 is structural schematic diagram when the utility model annular helical circle is not fallen.
Fig. 2 is the structural schematic diagram after the utility model annular helical circle is fallen.
Fig. 3 is the fixed form schematic diagram of the utility model annular helical circle and electronic positioning slide unit.
Wherein, the corresponding title of appended drawing reference are as follows: 1- waveguide, 2- water filling port, 3- deposition table, 4- substrate, 5- air inlet,
The electronic positioning slide unit of 6-, 7- annular helical circle, 8- water outlet, 9- plasma, 10- quartz window, 11- bleeding point, 12- conduit,
13- mode converter, 14- guide rail, 15- sliding block.
Specific embodiment
The utility model is described in further detail with embodiment for explanation with reference to the accompanying drawing, and the mode of the utility model includes
But it is not limited only to following embodiment.
Embodiment
As shown in Figure 1-3, a kind of resonant cavity for chemistry for gas phase depositing diamond film disclosed by the utility model, including
Resonant cavity ontology, quartz window 10, deposition table 3, mode converter 13, which is characterized in that the resonant cavity body upper part is cylinder
The bodily form is made of double-layer stainless steel, and inner space forms water-cooling channel, and its underpart is ChamferCyl shape, the chamfering circle
The angle of cylinder adjacent surface is 135 °, the resonant cavity bodies top be equipped with air inlet 5, bottom be equipped with bleeding point 11, it is described into
Port 5 and bleeding point 11 are connected to the cavity of resonant cavity body interior, and the resonant cavity bodies top is equipped with water outlet 8, bottom
Equipped with water filling port 2, the water filling port 2 and water outlet 8 are connected to the water-cooling channel.The resonant cavity body upper part side vertical
It is fixed with electronic positioning slide unit 6, annular helical circle 7, the annular helical circle 7 are fixed on the sliding block 15 of electronic positioning slide unit 6
It is coaxial with resonant cavity ontology, the deposition table 3 be located at resonant cavity body interior and coaxially, the deposition table 3 be hollow knot
Structure, its underpart are sealedly connected with conduit 12, and 12 lower end of conduit and resonant cavity body bottom portion are tightly connected, the conduit 12 and deposition
The water-cooling channel of cavity and resonant cavity ontology inside platform 3 is connected to.The resonant cavity body bottom portion is equipped with circle concentric with it
Shape opening, the circular open are fixedly connected with microwave input structure, and the microwave input structure includes that waveguide 1 and mode turn
Parallel operation 13, the mode converter 13 and resonant cavity ontology are coaxial.The quartz window 10 be circular ring shape, be located at deposition table 3 with it is humorous
Between vibration chamber ontology bottom surface, and it is connect with deposition table 3 and resonant cavity ontology sealing bottom surface.
The course of work and original of microwave plasma CVD diamond film resonant cavity disclosed by the utility model
Reason are as follows: resonant cavity is vacuumized by bleeding point, after reaching certain vacuum degree, reaction gas, annular helical are injected by air inlet
Circle connects DC power supply.Microwave is coupled to the bottom of resonant cavity by mode converter through basic mode waveguide transmission, microwave electromagnetic field by
Resonant cavity bottom centre enters, and radially emits.Dielectric quartz window is disposed proximate to deposition table edge, herein field strength compared with
It is weak, it can avoid plasma breakdown.Quartz window also plays vacuum sealing effect simultaneously.Annular helical circle above resonant cavity is located at
Electronic positioning slide unit upper end when plasma generates, makes it be powered and moves downward along guide rail, plasma is in annular helical circle
Spheroid shape is become from spherical shape under the magnetic fields of generation, increases depositional area.Resonant cavity is double-layer structure, by its bottom
Water filling port inject cold water, water by upper part water outlet be discharged, formed water-cooling system, system temperature is reduced with this, is being increased
When microwave input power, the temperature of diamond film deposition is controlled to the matter for guaranteeing the diamond film of deposition at 600~1100 DEG C
Amount.
The utility model is increased by the removable annular solenoid of setting using the shape of magnetic field control plasma
Depositional area enables a system to generate greater area of diamond film.Quartz window is set to deposition table and resonant cavity ontology bottom surface
Between, etching risk is reduced, service life is improved.Resonant cavity body lower part is ChamferCyl shape, being capable of microwave reflection
Above to deposition table, results from plasma above deposition table, be conducive to the deposition of diamond film.Water-cooling system can reduce
System temperature keeps the diamond film quality deposited higher.
Above-described embodiment is only one of preferred embodiments of the present invention, should not be taken to limit the utility model
Protection scope, as long as the utility model body design thought and mentally make have no the change of essential meaning or profit
Color, it is solved the technical issues of it is still consistent with the utility model, the protection scope of the utility model should all be included in
Within.
Claims (6)
1. a kind of resonant cavity for chemistry for gas phase depositing diamond film, including resonant cavity ontology, quartz window (10), deposition table
(3), mode converter (13), which is characterized in that the resonant cavity body upper part is cylindrical, and lower part is ChamferCyl
Shape, the angle of the ChamferCyl adjacent surface are 135 °, and the resonant cavity body upper part side vertical is fixed with electronic positioning
Slide unit (6) is fixed with annular helical circle (7) on the sliding block (15) of electronic positioning slide unit (6), the annular helical circle (7) with it is humorous
The chamber ontology that shakes is coaxial, and the deposition table (3) is located at resonant cavity body interior and coaxial, and the resonant cavity body bottom portion is equipped with
Circular open concentric with it, the circular open are fixedly connected with microwave input structure, and the quartz window (10) is circular ring shape,
It is connect between deposition table (3) and resonant cavity ontology bottom surface, and with deposition table (3) and resonant cavity ontology sealing bottom surface.
2. a kind of resonant cavity for chemistry for gas phase depositing diamond film according to claim 1, which is characterized in that described
Resonant cavity ontology is made of double-layer stainless steel, and inner space forms water-cooling channel.
3. a kind of resonant cavity for chemistry for gas phase depositing diamond film according to claim 2, which is characterized in that described
Resonant cavity bodies top be equipped with air inlet (5), bottom be equipped with bleeding point (11), the air inlet (5) and bleeding point (11) with it is humorous
The cavity connection for chamber body interior of shaking.
4. a kind of resonant cavity for chemistry for gas phase depositing diamond film according to claim 3, which is characterized in that described
Resonant cavity bodies top be equipped with water outlet (8), bottom be equipped with water filling port (2), the water filling port (2) and water outlet (8) with it is described
Water-cooling channel connection.
5. a kind of resonant cavity for chemistry for gas phase depositing diamond film according to claim 4, which is characterized in that described
Microwave input structure includes waveguide (1) and mode converter (13), and the mode converter (13) and resonant cavity ontology are coaxial.
6. a kind of resonant cavity for chemistry for gas phase depositing diamond film according to claim 5, which is characterized in that described
Deposition table (3) is hollow structure, and its underpart is sealedly connected with conduit (12), and conduit (12) lower end and resonant cavity body bottom portion seal
The water-cooling channel of connection, the conduit (12) cavity internal with deposition table (3) and resonant cavity ontology is connected to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821286148.6U CN208545490U (en) | 2018-08-09 | 2018-08-09 | A kind of resonant cavity for chemistry for gas phase depositing diamond film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821286148.6U CN208545490U (en) | 2018-08-09 | 2018-08-09 | A kind of resonant cavity for chemistry for gas phase depositing diamond film |
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| Publication Number | Publication Date |
|---|---|
| CN208545490U true CN208545490U (en) | 2019-02-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821286148.6U Active CN208545490U (en) | 2018-08-09 | 2018-08-09 | A kind of resonant cavity for chemistry for gas phase depositing diamond film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109778138A (en) * | 2019-03-21 | 2019-05-21 | 郑州磨料磨具磨削研究所有限公司 | A kind of microwave plasma diamond film deposition device |
| CN116926500A (en) * | 2023-07-20 | 2023-10-24 | 北方工业大学 | Annular diamond chemical vapor deposition device with adjustable deposition size |
-
2018
- 2018-08-09 CN CN201821286148.6U patent/CN208545490U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109778138A (en) * | 2019-03-21 | 2019-05-21 | 郑州磨料磨具磨削研究所有限公司 | A kind of microwave plasma diamond film deposition device |
| CN116926500A (en) * | 2023-07-20 | 2023-10-24 | 北方工业大学 | Annular diamond chemical vapor deposition device with adjustable deposition size |
| CN116926500B (en) * | 2023-07-20 | 2024-03-12 | 北方工业大学 | Annular diamond chemical vapor deposition device with adjustable deposition size |
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