CN208395315U - A kind of heat-exchanging method sapphire crystal growth heater - Google Patents
A kind of heat-exchanging method sapphire crystal growth heater Download PDFInfo
- Publication number
- CN208395315U CN208395315U CN201820505885.4U CN201820505885U CN208395315U CN 208395315 U CN208395315 U CN 208395315U CN 201820505885 U CN201820505885 U CN 201820505885U CN 208395315 U CN208395315 U CN 208395315U
- Authority
- CN
- China
- Prior art keywords
- heat
- heater
- sapphire crystal
- exchanging method
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 31
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 27
- 239000010980 sapphire Substances 0.000 title claims abstract description 27
- 230000012010 growth Effects 0.000 title claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000010276 construction Methods 0.000 claims description 3
- 239000007770 graphite material Substances 0.000 claims description 3
- 238000000462 isostatic pressing Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000011081 inoculation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000021332 multicellular organism growth Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to heat-exchanging method sapphire crystal growth fields, it is desirable to provide a kind of heat-exchanging method sapphire crystal growth heater.The heater is made of high purity graphite, symmetrical six heating valve in circumference range；A circular hole is squeezed into every the top that one is heated valve, each heating valve is all made of up-narrow and down-wide trapezoidal configuration；Gradient tilt angle ranges are 0 ° to 30 ° on each heating valve.The heater realizes that the appropriateness of longitudinal temperature gradient in heat-exchanging method sapphire crystal growing furnace increases by the up-narrow and down-wide trapezoidal configuration of heating valve, realizes the raising of sapphire crystal optical quality, reduces bubble and crystal boundary, improves crystal yield.
Description
Technical field
The utility model relates to sapphire crystal growth technical fields, are a kind of heat-exchanging method sapphire crystal growth heating
Device.
Background technique
Critical component of the sapphire crystal as current semiconductor illuminating industry is the important substrate of blue light and white light LEDs
Material, the growth preparation of high quality are the bases of industry development.Suitable thermal field design, is to realize when Sapphire Crystal Growth
The premise of high-quality sapphire growth.The reasonable control of temperature gradient is the key that its design in thermal field, directly affects growth
Technique, determine crystal latent defect number.
Sapphire growth method includes kyropoulos, heat-exchanging method, EFG technique, czochralski method, Bridgman-Stockbarger method etc..Wherein,
Heat-exchanging method is the main method for realizing sapphire large area deposition (diameter can be more than 300mm).As thermal field design, temperature ladder
The heater for spending one ring of key adjusted, at present using the rectangular configuration of upper and lower equivalent width in heat-exchanging method.It is this
Uniform structure heater makes the temperature gradient source of thermal field in furnace be limited to heat self-convection or radiation, longitudinal temperature gradient compared with
Small, impurity when may cause crystal growth near (later stage especially crystallized) solid liquid interface is not easy to exclude, and introduces
The defects of such as crystal boundary, this forms limitation to the raising of sapphire crystal optical quality.
Summary of the invention
The purpose of this utility model is that providing one kind for the limitation that heater in current heat-exchanging method adjusts thermal field
The heat-exchanging method sapphire crystal growth heater of longitudinal temperature gradient in furnace can be increased.
The technical solution of the utility model is as follows:
A kind of heat-exchanging method sapphire crystal growth heater, it is characterised in that: be symmetrically distributed in adding for circumference by six
Hot valve composition, gets through a circular hole every the top that one is heated valve, realizes the triangle of importing and the load of three-phase alternating current electrode
Shape connection.The construction of each heating valve is all made of up-narrow and down-wide trapezoidal design, gradient tilt angle ranges: 0 ° to 30 °.
The heater is made of high-purity (purity >=99.99%) isostatic pressing formed graphite material.
The technical effect of the utility model is: passing through the symmetrical realization sapphire crystal growth of circumference of six heating valves
Thermal field radial symmetry gradient is evenly distributed；By the trapezoidal design structure that heater is up-narrow and down-wide, heater top electricity is realized
Resistance increases, calorific value rises, and the temperature difference of top and the bottom in furnace is improved, to increase thermal field longitudinal temperature gradient；Trapezoidal inclination angle
Range is designed as 0 ° to 30 °, the amplitude that can control the calorific value of heater top to rise, and avoids the excessively high appearance of thermal field upper temp brilliant
Situations such as body growth crucible melts.The appropriateness that the heater integrally realizes longitudinal temperature gradient improves, and is conducive to inhibit heat exchange
The appearance of related defects when method sapphire crystal growth improves crystal quality and yield.
Detailed description of the invention
Fig. 1 is a kind of main view of heat-exchanging method sapphire crystal growth heater.
Fig. 2 is a kind of top view of heat-exchanging method sapphire crystal growth heater.
Fig. 3 is a kind of cross-sectional view of heat-exchanging method sapphire crystal growth heater.
Description of symbols: 1. trapezoidal heating valves；2. electrode imports circular hole.
Specific embodiment
Below with reference to specific drawings and examples, the utility model is described in further detail.
The utility model discloses a kind of heat-exchanging method sapphire crystal growth heaters, are symmetrically distributed in circumference by six
Heating valve (1) composition, got through a circular hole (2) every the top that one is heated valve, realize to the importing of three-phase alternating current electrode and
The delta connection of load；The construction of each heating valve is all made of up-narrow and down-wide trapezoidal design, and gradient tilt angle ranges are 0 °
To 30 °.Above-mentioned heat-exchanging method sapphire crystal growth heater uses high-purity (purity >=99.99%) isostatic pressing formed graphite material system
At.
A kind of application process of heat-exchanging method sapphire crystal growth heater is as follows: raw to heat-exchanging method sapphire crystal
Progress luggage furnace, installation the utility model heater, insulation cover etc.；Heating is carried out to raw material and forms melt and appropriate hot melt excessively
Body；Reduce inoculation of the temperature realization to seed crystal；Set suitable temperature control, power control, burner hearth vacuum degree, heat exchanger He
The parameters such as throughput realize being fully crystallized for melt；Rate of temperature fall curve is set, realizes the in-situ annealing and cooling of crystal, it is complete
It is prepared at the growth of high-quality, Low Defectivity heat-exchanging method sapphire crystal.
Above-described embodiment is the explanation to the utility model, is not the restriction to the utility model, and any pair of sheet is practical new
Scheme (such as change heater valve number etc.) after type simple transformation belongs to the protection scope of the utility model.
Claims (2)
1. a kind of heat-exchanging method sapphire crystal growth heater, it is characterised in that: be symmetrically distributed in the heating of circumference by six
Valve (1) composition, gets through a circular hole (2) every the top that one is heated valve, realizes the importing and load to three-phase alternating current electrode
Delta connection；The construction of each heating valve is all made of up-narrow and down-wide trapezoidal design, gradient tilt angle ranges: 0 ° to 30 °.
2. heat-exchanging method sapphire crystal growth heater according to claim 1, it is characterised in that: the heater
It is made of purity >=99.99% isostatic pressing formed graphite material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820505885.4U CN208395315U (en) | 2018-04-11 | 2018-04-11 | A kind of heat-exchanging method sapphire crystal growth heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820505885.4U CN208395315U (en) | 2018-04-11 | 2018-04-11 | A kind of heat-exchanging method sapphire crystal growth heater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208395315U true CN208395315U (en) | 2019-01-18 |
Family
ID=65064720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820505885.4U Expired - Fee Related CN208395315U (en) | 2018-04-11 | 2018-04-11 | A kind of heat-exchanging method sapphire crystal growth heater |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208395315U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172584A (en) * | 2020-03-10 | 2020-05-19 | 浙江海纳半导体有限公司 | Three-phase alternating current heater for thermal field of czochralski crystal growing furnace and use method |
-
2018
- 2018-04-11 CN CN201820505885.4U patent/CN208395315U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172584A (en) * | 2020-03-10 | 2020-05-19 | 浙江海纳半导体有限公司 | Three-phase alternating current heater for thermal field of czochralski crystal growing furnace and use method |
| CN111172584B (en) * | 2020-03-10 | 2023-10-31 | 浙江海纳半导体股份有限公司 | Three-phase alternating current heater for thermal field of Czochralski crystal growing furnace and use method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190118 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |