CN208093538U - Power semiconductor assembly module with the pressure plare for constituting basin body - Google Patents
Power semiconductor assembly module with the pressure plare for constituting basin body Download PDFInfo
- Publication number
- CN208093538U CN208093538U CN201690001177.6U CN201690001177U CN208093538U CN 208093538 U CN208093538 U CN 208093538U CN 201690001177 U CN201690001177 U CN 201690001177U CN 208093538 U CN208093538 U CN 208093538U
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- China
- Prior art keywords
- power semiconductor
- semiconductor assembly
- pressure plare
- heat conduction
- radiator
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 239000000463 material Substances 0.000 claims description 10
- 230000000712 assembly Effects 0.000 claims description 5
- 238000000429 assembly Methods 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 230000002457 bidirectional effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 230000005622 photoelectricity Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000002482 conductive additive Substances 0.000 claims 1
- 230000013011 mating Effects 0.000 claims 1
- 239000000306 component Substances 0.000 description 10
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005553 drilling Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000036316 preload Effects 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011469 building brick Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model is related to power semiconductor assembly modules (20) for being fixed on radiator (18), have：At least one power semiconductor assembly (12)；Contact tool (11,16) is used at least one power semiconductor assembly of conductive contact (12)；At least partly it is designed as the pressure plare (1) of heat conduction；Pre- clamping tool (13,14,19) is designed as that contact tool (11,16) is made to pre-tighten with electrical contact against power semiconductor assembly (12) and power semiconductor assembly (12) is made to be pre-tightened against at least one thermal conductivity region for the pressure plare (2) for being at least partly designed as heat conduction with thermal contact preferably on radiator (18) direction；Setting tool (1,7,17) is used to pre- clamping tool being fixed on radiator (18), wherein setting tool (1,17,17) includes the pressure plare (1) for being at least partly designed as heat conduction, it is characterised in that the pressure plare (1) of at least partly heat conduction constitutes at least one basin body (9) for surrounding power semiconductor (12).
Description
Technical field
The present invention relates to a kind of power semiconductor assembly modules for being fixed on radiator and one kind by the two structure
At device.It includes the tool of the so-called pressure contact for power semiconductor assembly module.Just in heat exchange duty
It is in power semiconductor electronic component in terms of the problem, in order to contact the component of high pressure resistant and resistance to high current
Go out this pressure contact.These high voltage bearing semiconductor subassemblies are, for example, high-pressure thyristor, and high-pressure thyristor is high tension transformer
The interior core component for distributing electric energy.It is especially suitable for the high request of component reliability for these devices.
Background technology
Power semiconductor assembly or it is such be pressure by spring pre-tightening on the carrier for accommodating electronic building brick
Contact such contacts.Here, also establishing and keeping essentially by the active force mechanically applied
Mechanical Contact between the contact area of electronic building brick and the contact for guiding electric current and then include electrical contact.This has in this way
The advantages of, i.e., by mechanicals efforts-for example by tensioning apparatus or by spring assembly-it is corresponding adjusting can be fully
In view of the heat exchange duty caused by the mechanical tolerance due to being brought by this mechanical fixation.
In addition, semiconductor subassembly connects with radiator in heat conduction in order to avoid being damaged caused by overheat is possible
It touches.By radiator, the size of heat dissipation area is increased, and then is improved from semiconductor subassembly to surrounding medium, such as sky
The heat transfer of gas.In known module, there are a kind of plate of the absorption pressure of the metallic of bulk, one side and semiconductor
Component, another side and radiator are in thermal contact.In existing shell, the plate of absorption pressure, also referred to as pressure plare are not
The heat transition being only used between power semiconductor assembly and radiator, also mainly as the support plinth of pressure contact tool.
In order to ensure the electrical contact to component, it is applied in such as 10 to 12MPa pressing force.Because heat must be at this
It is exported on plate and by the plate, heat conduction resistance will influence heat derives in principle.But in addition, actually also
The insufficient problem of the thermal contact that is faced between this plate and radiator.Due to tensile force and thus in order to avoid occurring
Bending moment caused by bend, the plate of absorption pressure is also just set to suitable bulk in the prior art, has this
The defect of sample, i.e. this plate can not even compensate between the previously given molding of contact area, such as roughness
Slight deviations either between radiator and this plate due to deviation caused by above-mentioned bending.Therefore it there is in this way
Risk, that is, influence the heat transition from power semiconductor assembly to radiator.Due to thermal resistance, there is power semiconductor assembly by
To destruction and the risk of failure.
Invention content
In view of this background of these defects, the present invention proposes this purpose, to provide a kind of scattered for being fixed on
Power semiconductor assembly module on hot body and a kind of involved device being made of the two, by its improvement or ensure
Heat transition between power semiconductor assembly and radiator, especially power semiconductor modular can be more easily cast to pour
Material feeding.This purpose according to the present invention is achieved by a kind of module with claim 1 feature.Dependent claims
Disclose more very favorable configurations of the present invention.The description of incidental claim is respectively equally advantageous answers
With and assembly program.It should be noted that the feature individually enumerated in the claims can arbitrary, technically significant side
Formula be combined with each other, and indicates the more multi-configuration of the present invention.In addition, this specification especially shows in conjunction with attached drawing and specifies this hair
It is bright.
The present invention relates to a kind of power semiconductor assembly modules, hereinafter simply also referred to as module, for being fixed on radiator,
So that the waste heat of at least one power semiconductor assembly is thus accessed radiator.In power semiconductor assembly and its quantity side
Face, the present invention are not limited.It is preferred that it is a kind of rectifier (SCR) of silicon control, power governor, power crystal triode, absolutely
Edge fence gate gated transistors (IGBT), mos field effect transistor (MOSFET), power rectifier, diode,
Such as Schottky diode, junction field effect transistor, thyristor, such as turn-off thyristor, bidirectional thyristor, two-way triggering
Diode or photoelectricity tetrode.Include to be combined by its each in multiple power semiconductor assemblies according to the present invention.Example
As at least one power semiconductor assembly has a kind of form of plate-like, wherein one of straight primary side will court
To radiator.Power semiconductor assembly is for example interconnected as half-bridge, full-bridge or three-phase current electric bridge.
According to the present invention, in addition contact tool is set, electrically to contact at least one power semiconductor assembly.Such as
Contact tool is at least partially disposed between pre- clamping tool and power semiconductor assembly described below.Contact tool is for example
Contact area at least one plane for actuating type contacts the component, and on the other end thereof desired by
Interconnection technique be for example configured to public plug contacts and/or screw connection.
According to the present invention, in addition the pressure plare for being at least partly configured to heat conduction is set.Such as pressure plare is designed to be
Heat conduction or entire heat conduction only in one or more regions.Such as plate is at least partly or completely by metal and/or gold
Belong to alloy and/or ceramics are constituted.It is preferred that pressure plare has aluminium or copper or aluminium nitride at least in one or more thermal conductivity regions
Ceramics.In another configuration, plate is molded of plastic material, such as a kind of thermoplastic, in one or more thermal conductive zones
There is metallic particles in domain.Such as pressure plare by it is extensible, can the material of heat conduction, such as copper make.Pressure plare relative to
It is quite high for the element, such as radiator or the subsequent material being electrically isolated used in intermediate plate that connect with pressure plare
Expansion service improve the heat transition between radiator and power semiconductor assembly because extensible material is due to its higher
Plasticity and can compensate for the irregularity degree in contact area.
In addition, according to the present invention, pre- clamping tool is set, is provided so that contact tool towards power semiconductor assembly
Pre-tightened for electrical contact and make power semiconductor assembly towards pressure plare at least one thermal conductivity region, preferably dissipate
It is pre-tightened for thermal contact on the direction of hot body.According to the present invention, pre- clamping tool not only assumes responsibility for electrical pressure contact
Function has also taken on power semiconductor assembly and pressure plare or has said the function of the thermal contact between radiator, this is to pass through
These pre- clamping tools are for example positioned to so as to the contact between assembling power semiconductor assembly postcooling body and pre- clamping tool
What the mode that tool is inserted into was realized.It the advantages of being deposited in principle according to pressure contact given to this invention, can abandon
It is contacted using welding, and welding contact has its more unstable defect in terms of heating power.In addition, pressure contact ensures,
Under fault condition, in the so-called alloying of power semiconductor assembly, short circuit to be detected is just constituted.
The setting tool on radiator is fixed on for pre- clamping tool, wherein setting tool includes at least in addition, being arranged
The pressure plare of part heat conduction.
According to the present invention, the pressure plare of at least part heat conduction constitute it is at least one surround power semiconductor assembly and
/ or all power semiconductor assemblies basin body.It is understood to be a kind of accommodating including bottom and circular wall surface as basin body
Part, wherein power semiconductor assembly is disposed in accommodating member.Circular wall surface leads to the mechanical reinforcing of pressure plare, to
Pressure plare can especially be reduced in the material to be arranged between power semiconductor assembly and radiator and in defined region
Thickness, so as to better heat transition, without jeopardizing machine of the pressure plare especially when it is used as the support plinth of pre- clamping tool
Tool stability.Therefore, it is additionally present of this possibility, i.e.,：For pressure plare be converted in contrast less expensive or lighter material,
Such as aluminium, the stability without jeopardizing pressure plare.Simultaneously as peviform, there is what use completely or partially filled up basin body
The feasibility of castable, to prevent at least one power semiconductor assembly dirty and influenced by humidity.In order to protect
The power semiconductor assembly that is disposed in module and in order to ensure being adequately electrically isolated, element, especially power semiconductor
Component inside the shell by soft castable (such as Silica hydrogel, be under the jurisdiction of the group class of cold curing bi-component silicone elastomer) cover and by
This is protected.In addition, could dictate that the coating being made of epoxy resin.
Therefore, circular wall surface and thus bring reinforcing, especially kept away by pre- clamping tool also in terms of bending strain
Exempt from that fairly small in size and the capacity of heat transmission is good simultaneously bends in the region engaged with radiator, to
The thermal coupling between radiator will not be finally influenced due to mechanically deform.In addition, the high mechanical stability of pressure plare is one
Pre- clamping tool being reliably fixed by pressure plare on radiator is acted in kind design.Pressure plare for example passes through in its this respect
Screw is fixed on radiator.
According to a kind of preferred embodiment, pressure plare has bearing on its side towards power semiconductor assembly,
Such as power semiconductor assembly and/or it is optionally provided between power semiconductor assembly and pressure plare, electric isolution
Intermediate plate and/or contact tool.It is preferred that bearing is superimposed with thermal conductivity region each.It there is as a result, even
There is no radiator power semiconductor assembly by pre- clamping tool towards pressure plare, i.e. into the bearing of pressure plare
The possibility of preload.Therefore, power semiconductor assembly can not lack.Additionally, there are it is prefabricated and in the mounted state store and transport
The possibility of defeated module.
It is set by thermal coupling with power semiconductor assembly that thermal conductivity region, which is preferably designed such that it has almost,
Surface overlap section.It is preferred that thermal conductivity region is designed to circle.
It is preferred that bearing is designed to power semiconductor assembly and/or electric isolution intermediate plate and/or the gap of contact tool is matched
Conjunction or press-fit.Bearing is, for example, to be provided by multiple bridge pieces constructed by pressure plare.More preferable bearing is
Pass through sinking, the engagement surface construction that for example sinks within the scope of 0.5 to 2mm for the circumferential surface of pressure plare.?
, it is specified that being combined with sinking joint surface by bridge piece in a kind of design.
It is preferred that the tool of preload includes disc spring or plane spring.
According to another advantageous design, module also comprise be previously mentioned before can heat conduction, the intermediate plate that is electrically isolated,
For being arranged between power semiconductor assembly and radiator.Plate is for example main or is manufactured completely by aluminium nitride ceramics.
Preferably by pre- clamping tool, pre-tighten adjustable.For this purpose, pre- clamping tool is for example connected including at least one screw.Cause
This, rested on radiator with it for thermal contact and electrical contact, power semiconductor assembly contact in other words tool with
Its pressure rested on component can be adjusted and/or be calibrated by pre- clamping tool, for example by screw connection.
In addition, the present invention relates to a kind of modules by expedients before in one such and radiator, such as piece
The device that formula radiator is constituted.This radiator is for example made of aluminium.
In addition, the connecing for electric current, the especially up to electric current of 800A and the voltage that reaches 3600V the present invention relates to module
The use of logical, adjusting and/or rectification.
Description of the drawings
The more features and advantage of the present invention by remaining claim and is below understood not to the present invention
It is obtained in the explanation of limited embodiment, embodiment is expanded on further with reference to the accompanying drawings.In the drawings schematically
It shows：
Fig. 1 is the perspective, side-elevation view in a kind of design according to the pressure plare 1 of the present invention；
Fig. 2 is another embodiment party for being had according to the pressure plare 1 of the present invention contact tool for being placed into lower section therein
The perspective side elevation view of formula；
Fig. 3 is to be had to be placed into power therein half according to the embodiment as shown in Figure 1 of the pressure plare 1 of the present invention
The perspective side elevation view of conductor assembly and complete contact tool；
Fig. 4 is to be had to be placed into power therein half according to the embodiment as shown in Figure 1 of the pressure plare 1 of the present invention
The perspective side elevation view of conductor assembly and complete pre- clamping tool；
Fig. 5 is a kind of perspective view of module 10 according to the present invention, and the module is by placing shown in block to Fig. 4
It by completion and is fixed on radiator on pressure plare 1.
Specific implementation mode
The details of the pressure plare 1 of module 20 as shown in Figure 5 according to the present invention is shown in FIG. 1, which is solid
Determine a part for device, module 20 is fixed on it on unshowned radiator shown in Fig. 5, this is by surface 8, i.e.
What the mode rested on radiator backwards to the side of observer in Fig. 1 was realized.Surface 8 is commonly designed straight.In order to press
The fixation of power plate 1, there are four drillings 7 for tool.By pass through drilling 7, unshowned screw, realizes pressure plare 1 and then include
Releasable of the module 20 on radiator in Fig. 5 is fixed.Pressure plare 1 is made of aluminium, and is flowed in a kind of molding casting
It is manufactured in journey, other than bottom 10, also there is the circular wall surface 3 being connect with 10 integral type of bottom.Because pressure plare 1 by
Aluminium is constituted, it is entirely heat conduction.Therefore, pressure plare 1 is not merely to have local heat conduction in the current situation.This wall surface 3
The mechanical reinforcing for constituting pressure plare 1, so that bottom 10 can be relatively thin.Wall surface 3 defines the recess 9 of peviform, and recess is being worked as
Before in the case of by do not reach the intermediate bridge piece 5 of wall face height be divided into two be respectively single power semiconductor assemblies
Set chamber.Basin body 9 is additionally useful for housing unshowned castable.
It is built into drilling 4 in wall surface 3, the fixation to drill for pre-tightening tool, this is further illustrated by Fig. 4.?
Bearing 2,6 is constructed in pressure plare 1.Bearing one side by the surface defined by bottom 11 it is round sink 2 and logical
Cross it is pairs of face bridge piece 6 relative to each other and constitute, the overall insulating disc for being arranged to connect with pressure plare 1 with
And the fixation and positioning of a part 11 for contact tool, as shown in Figure 2.Pressure plare 1 according to the present invention is shown in FIG. 2
Another embodiment, wherein abandoning the construction using bridge piece 6 such as in Fig. 1.
A kind of installation condition is shown in FIG. 3, wherein, two power semiconductor assemblies 12 are placed into basin body 9,
Include that load attachment member 11 is added completely with the contact tool 11,16 of control connecting element 16.It is mounted in Fig. 4 pre-
Clamping tool 13,14.It overlaps this component 12 in this regard, being arranged one for each power semiconductor assembly 12 and is disposed in thereon
The plate 14 of disc spring 19, plate by the screw 13 that puts in the drilling 4 of pressure plare 1 so that power semiconductor 12 towards
Pressure plare 1 pre-tightens on the direction of unshowned radiator, both to ensure electrical contact by pressure contact, also ensures that heating power
Contact.Due to screw 13, the preload is adjustable.
Fig. 5 is shown after being poured into a mould with unshowned castable and is formed by after covering pressure plare 1 with block 15
Module 20.Block 15 has open-work, so that load interface 11 and the holding of control interface 16 can be contacted by external electrical.
In addition show the screw 17 mutually attached with setting tool, penetrate the drilling 7 of pressure plare 1, so as to by its together with
Surface 8 rests on 18 Shangdi of radiator and is tightened with the radiator.
Claims (11)
1. a kind of power semiconductor assembly module (20), for being fixed on radiator (18), including：
At least one power semiconductor assembly (12)；
The tool of contact (11,16), for electrically contacting at least one power semiconductor assembly (12)；
At least partly it is designed to the pressure plare (1) of heat conduction；
Pre- clamping tool (13,14,19), is designed to so that the contact tool (11,16) is against the power semiconductor
Component (12) makes the power semiconductor assembly (12) be at least partly designed to against described so as to electrical contact
At least one thermal conductivity region of the pressure plare (2) of heat conduction pre-tightens on the direction of the radiator (18) so as to thermal contact；
Setting tool (1,7,17), for the pre- clamping tool to be fixed on the radiator (18), wherein the fixation
Tool (1,17,17) includes the pressure plare (1) for being at least partly designed to heat conduction, wherein described at least partly to lead
The pressure plare (1) of heat constitutes at least one basin body (9) for surrounding power semiconductor (12), which is characterized in that in the basin
Castable is housed in body (9).
2. the power semiconductor assembly module (20) according to the claims, wherein described to be at least partly designed
It is constituted on its side towards the power semiconductor assembly (12) and the thermal conductivity region weight for the pressure plare (1) of heat conduction
The bearing (2,6) of conjunction.
3. power semiconductor assembly module (20) according to claim 1, wherein the pressure plare (1) or at least institute
It is by Heat Conduction Material or by the heat-conductive additives in the pressure plare (1) or the material of the thermal conductivity region to state thermal conductivity region
To define.
4. power semiconductor assembly module (20) according to claim 1, wherein the thermal conductivity region be by with it is described
What the liner being connected with being at least partly designed to the remaining remaining part material mating formula of the pressure plare of heat conduction was constituted.
5. power semiconductor modular (20) according to claim 1, wherein the pre- clamping tool (13,14,19) includes disk
Shape spring (19) or plane spring.
6. power semiconductor modular (20) according to claim 1, also comprise can heat conduction, the intermediate plate that is electrically isolated,
For being arranged between the power semiconductor assembly (12) and the radiator (18).
7. power semiconductor modular (20) according to claim 6, wherein it is described can heat conduction, the intermediate plate that is electrically isolated sets
It sets between the power semiconductor assembly and the pressure plare of at least part heat conduction (1).
8. power semiconductor modular (20) according to claim 1, there is block (15) or head cover, so as to the basin body
(9) hollow volumes are defined to house at least one power semiconductor assembly.
9. power semiconductor modular (20) according to claim 1, wherein by the pre- clamping tool (13,14,17),
Described pre-tighten is adjusted.
10. power semiconductor modular (20) according to claim 1, wherein at least one power semiconductor assembly
(12) include a kind of rectifier (SCR), power governor, power crystal triode, insulated gate gate transistors of silicon control
(IGBT), mos field effect transistor (MOSFET), power rectifier, diode, such as two pole of Schottky
Pipe, junction field effect transistor, thyristor, such as turn-off thyristor, bidirectional thyristor, bidirectional trigger diode or photoelectricity
Tetrode or multiple power semiconductor assemblies are the combinations being made of it.
11. one kind is by power semiconductor assembly module (20) according to any one of the preceding claims and radiator (18)
The device of composition.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015114046 | 2015-08-25 | ||
| DE102015114046.2 | 2015-08-25 | ||
| PCT/DE2016/000328 WO2017032356A1 (en) | 2015-08-25 | 2016-08-24 | Power semiconductor device module having a pressure plate that forms a basin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208093538U true CN208093538U (en) | 2018-11-13 |
Family
ID=57256010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201690001177.6U Active CN208093538U (en) | 2015-08-25 | 2016-08-24 | Power semiconductor assembly module with the pressure plare for constituting basin body |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN208093538U (en) |
| DE (1) | DE112016003856A5 (en) |
| RU (1) | RU2693521C1 (en) |
| WO (1) | WO2017032356A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11063495B2 (en) | 2019-07-01 | 2021-07-13 | Nidec Motor Corporation | Heatsink clamp for multiple electronic components |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4068368A (en) * | 1975-10-14 | 1978-01-17 | The Bendix Corporation | Closure for semiconductor device and method of construction |
| DE2728564A1 (en) * | 1977-06-24 | 1979-01-11 | Siemens Ag | SEMICONDUCTOR COMPONENT |
| DE2942401C2 (en) * | 1979-10-19 | 1984-09-06 | Siemens AG, 1000 Berlin und 8000 München | Semiconductor component with several semiconductor bodies |
| DE2942409A1 (en) * | 1979-10-19 | 1981-04-23 | Siemens AG, 1000 Berlin und 8000 München | SEMICONDUCTOR COMPONENT WITH SEVERAL SEMICONDUCTOR BODIES |
| DE3005313C2 (en) * | 1980-02-13 | 1986-05-28 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Semiconductor device |
| EP0138048B1 (en) * | 1983-09-29 | 1993-12-15 | Kabushiki Kaisha Toshiba | Press-packed semiconductor device |
| JPS6074462A (en) * | 1983-09-29 | 1985-04-26 | Toshiba Corp | Semiconductor device |
| JPS6074461A (en) * | 1983-09-29 | 1985-04-26 | Toshiba Corp | Semiconductor device |
| JP5831626B2 (en) * | 2012-03-28 | 2015-12-09 | 富士電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
-
2016
- 2016-08-24 CN CN201690001177.6U patent/CN208093538U/en active Active
- 2016-08-24 WO PCT/DE2016/000328 patent/WO2017032356A1/en active Application Filing
- 2016-08-24 DE DE112016003856.9T patent/DE112016003856A5/en active Pending
- 2016-08-24 RU RU2018110060A patent/RU2693521C1/en active
Also Published As
| Publication number | Publication date |
|---|---|
| DE112016003856A5 (en) | 2018-05-03 |
| WO2017032356A1 (en) | 2017-03-02 |
| RU2693521C1 (en) | 2019-07-03 |
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Address after: Wansheng City, Germany Patentee after: Infineon technology bipolar Co.,Ltd. Address before: Wansheng City, Germany Patentee before: INFINEON TECHNOLOGIES BIPOLAR GmbH & Co.KG |