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CN208060047U - A kind of integral type quartz resonance pressure sensor structure - Google Patents

A kind of integral type quartz resonance pressure sensor structure Download PDF

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Publication number
CN208060047U
CN208060047U CN201820589554.3U CN201820589554U CN208060047U CN 208060047 U CN208060047 U CN 208060047U CN 201820589554 U CN201820589554 U CN 201820589554U CN 208060047 U CN208060047 U CN 208060047U
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Prior art keywords
hole
resistance
pressure sensor
integral type
sensing element
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桑利
李辉
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Chengdu Orson Tech Co Ltd
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Chengdu Orson Tech Co Ltd
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Abstract

The utility model discloses a kind of integral type quartz resonance pressure sensor structures, it is related to sensor field, more particularly to a kind of integral type quartz resonance pressure sensor structure, it is easy to aging for solving under the existing prior art between quartz resonance pressure sensor sensing element and structure to bring using bonding method, hardly possible positioning, there are problems that temperature drift, the utility model includes sensing element and sensor main body, the sensing element is all made of quartz, including component body, resonant chip and first through hole, the component body is rectangular parallelepiped structure, the front center of the component body offers first through hole, the first through hole center is equipped with the resonant chip being connected with component body, the utility model has long lifespan, temperature drift is controllable, high sensitivity and the good advantage of the linearity.

Description

A kind of integral type quartz resonance pressure sensor structure
Technical field
The utility model is related to sensor field more particularly to a kind of integral type quartz resonance pressure sensor structures.
Background technology
Pressure sensor on the market is nothing more than pressure resistance type, piezoelectric type or resonant mode at present;Piezoresistive pressure sensor Sensing unit be varistor, feature is to cause resistance value to change when ambient pressure acts on varistor, is passed through The variation for measuring output voltage values converses the size of external pressure.The shortcomings that such sensor, is that temperature drift is serious, and for a long time Using being also easy to produce creep effect, therefore apply the test of the low static force of required precision.Piezoelectric transducer uses piezoelectric quartz or pottery The maximum feature piezoelectric modulus of ceramic material, such sensor is high, and Q values are high therefore measuring accuracy is high;But it is that can test dynamic force.Most Resonance type pressure sensor increasingly attracted attention in recent years, was made using piezoelectric resonator component, with resonance component Frequency variation perception external force size, feature Direct Digital frequency signal output, and precision compared with above two height, in addition Such sensor can test static power while can also test dynamic power;Pass is received under degree of precision power test case Note.
It is the installation question between sensing element and structure that maximum problem is faced when making the sensor.It is passing Way be that the two is linked together by way of stickup, such way can have the following:
1, the connection of glue point can lead to sensor long-time stability.Since glue can be long with the influence of extraneous temperature Phase aging will cause sensing element to go wrong with interstructural bonding force.
2, the connection of glue point is unable to control the bonding force between Sensitive Apparatus and structure, sensor in each device of result The prestressing force cause not of uniform size of part, will cause the consistency of final products is excessively poor can not produce in batches.
3, it is difficult to ensure that positioning relation between Sensitive Apparatus and structure during dispensing.
4, due to glue point, the material between structure and sensitive components three is different, and coefficient of thermal expansion is also different, when outer When boundary's temperature changes, the temperature drift of sensor is unable to control.Switzerland Qi Shile is tied it is also proposed that integral structure The connection of chip and metal structure is still had in structure, therefore two kinds of material different temperatures coefficients of expansion can not be avoided to cause to sense The temperature drift problem of device.
Utility model content
The purpose of this utility model is that:To solve the above-mentioned problems, it is humorous to provide a kind of integral type quartz for the utility model Shake pressure sensor structure, and using the configuration of full quartz construction, the cut type of resonant chip is consistent with structural framing, and total is The advantages of integral type is not present glue point and connects, and has easily batch production, and structure positioning is accurate, and there is no temperature drift problems.
The technical solution adopted in the utility model is as follows:
A kind of integral type quartz resonance pressure sensor structure, including sensing element and sensor main body, the sensor Main body includes pedestal, lead, bottom plate and external connection, and the bottom plate is equipped with amplifying circuit, and the sensing element is fixed on pedestal In, the sensing element and amplifying circuit are electrically connected by lead, and the external connection is electrically connected with amplifying circuit, the sensitive member Part is all made of quartz, including component body, resonant chip and first through hole, and the component body is rectangular parallelepiped structure, institute The front center for stating component body offers first through hole, and the first through hole center is equipped with to be connected with component body integral type Resonant chip.
Further, in the structure size of the component body, Length x Width and height are equal, are 40mm~42mm.
Further, the cylinder front center through component body of the first through hole, the first through hole Internal diameter is 9mm~11mm.
Further, the resonant chip thickness is 0.200mm~0.210mm, including stress piece and connection sheet, it is described by Two panels connection sheet is extended at the symmetrical both ends of power piece, and the connection sheet is seamlessly connected with first through hole inner wall.
Further, the connection sheet maximum width is less than stress piece diameter.
Further, the component body center side opens up the second through-hole, second through-hole it is cylinder through The geometric center of the center side of component body, the geometric center of the first through hole and the second through-hole overlaps.
Further, the amplifying circuit includes resistance Rb1, resistance Rb2, resistance Rc1, resistance Rc2, capacitance C1, can be changed Capacitance C2, triode T1 and triode T2, one end of sensing element is connected with variable capacitance C2 and resistance Rc2 successively to be followed by exporting The other end of terminal Ec, sensing element are connected with the base stage of one end of resistance Rb1 and triode T1 respectively, the resistance Rb1's The other end connects the emitter for being followed by leading-out terminal V0, the triode T1 with triode T2's with capacitance C1 resistance Rb2 successively Emitter is grounded, and the collector of triode T1 is connected with resistance Rc1 is followed by leading-out terminal EC, the base stage of the triode T2 and Collector is connected in parallel on the both ends of resistance Rb2.
In conclusion by adopting the above-described technical solution, the utility model has the beneficial effects that:
1. the utility model uses integral structure, there is no glue points to paste, and also just there is no affixed points long-term ageings Problem, longer life expectancy.
2. the integral structure of the utility model makes the conduction of the power between element body and resonant chip controllable, each Prestressing force in sensing element is in the same size, and the consistency of product is good, is conducive to produce in batches.
3. the utility model resonant chip and element body are an integral structure, positioning is not present in process of production and asks Topic, can improve production efficiency.
4. the utility model resonant chip and element body are all using the quartz crystal of same cut type, having the same swollen Swollen coefficient, when ambient temperature changes, the temperature drift of sensor is controllable.
5. the improvement that the utility model punches element body so that resonant chip stress maximizes, and improves Chip uniform force, the structure linearity is preferable, and linear fit error is 7% or so, to improve the sensitivity of sensor.
Description of the drawings
The utility model will illustrate by example and with reference to the appended drawing, in the accompanying drawings:
Fig. 1 is the utility model overall structure diagram;
Fig. 2 is the utility model amplifying circuit schematic diagram;
Fig. 3 is 1 sensing element structural schematic diagram of the utility model embodiment;
Fig. 4 is 1 sensing element force analysis figure of the utility model embodiment;
Fig. 5 is 1 sensing element FEM analogous diagrams of the utility model embodiment;
Fig. 6 is 2 sensing element structural schematic diagram of the utility model embodiment;
Fig. 7 is 2 sensing element force analysis figure of the utility model embodiment;
Fig. 8 is 2 sensing element FEM analogous diagrams of the utility model embodiment.
Reference numeral:1, sensing element;1-1, component body;1-2, resonant chip;1-2-1, stress piece;1-2-2, connection Piece;1-3, first through hole;1-4, the second through-hole;2, sensor main body;3, pedestal;4, lead;5, bottom plate;6, external connection;7, it puts Big circuit.
Specific implementation mode
It is new to this practicality with reference to the accompanying drawings and examples in order to which those skilled in the art are better understood from utility model Type is described in detail.
Embodiment 1:
As shown in figures 1 and 3, a kind of integral type quartz resonance pressure sensor structure, including sensing element 1 and sensor Main body 2, the sensor main body 2 include pedestal 3, lead 4, bottom plate 5 and external connection 6, and the bottom plate 5 is equipped with amplifying circuit 7, The sensing element 1 is fixed in pedestal 3, and the sensing element 1 and amplifying circuit 7 are electrically connected by lead 4, the external connection 6 are electrically connected with amplifying circuit 7, which is characterized in that the sensing element 1 is all made of quartz, including component body 1-1, humorous Shake chip 1-2 and first through hole 1-3, and the component body 1-1 is rectangular parallelepiped structure, the front center of the component body 1-1 It offers the centers first through hole 1-3, the first through hole 1-3 and is equipped with the resonant chip 1-2 being connected with component body 1-1.
As a preferred embodiment, in the structure size of the component body 1-1, length, width and height phase Deng being 41mm.
As a preferred embodiment, the cylinder fronts through component body 1-1 first through hole 1-3 The internal diameter at center, the first through hole is 10mm.
As a preferred embodiment, the thickness of the resonant chip 1-2 is 0.208mm, including stress piece 1-2-1 Extend at symmetrical both ends two panels connection sheet 1-2-2, the connection sheet 1-2-2 with connection sheet 1-2-2, the stress piece 1-2-1 It is seamlessly connected with the inner wall of first through hole 1-3.
As a preferred embodiment, the connection sheet 1-2-2 maximum widths are less than stress piece 1-2-1 diameters.
As shown in Fig. 2, as a preferred embodiment, the amplifying circuit 7 includes resistance Rb1, resistance Rb2, electricity Hinder Rc1, resistance Rc2, capacitance C1, variable capacitance C2, triode T1 and triode T2, one end of sensing element successively with can power transformation Hold C2 and resistance Rc2 series connection and be followed by leading-out terminal Ec, the other end of sensing element respectively with one end of resistance Rb1 and triode T1 Base stage be connected, the other end of the resistance Rb1 is connected with capacitance C1 resistance Rb2 successively is followed by leading-out terminal V0, three pole The emitter of pipe T1 and the emitter of triode T2 are grounded, and the collector of triode T1 is connected with resistance Rc1 is followed by output end Sub- EC, the base stage and collector of the triode T2 are connected in parallel on the both ends of resistance Rb2.
It is deformed after the upper surface stress of total, power is transmitted in intermediate resonant chip, leads to resonant chip The stress value size of node test corresponding transmission on node after surface applies external force on intermediate harmonic chip is chosen in deformation, The linearity of the structure is evaluated, the results are shown in Figure 4 for force analysis, carries out finite element method and emulates to obtain such as Fig. 5 as a result, right The numerical value answered is as follows:
force(N) STRESS(PA)
1000 18038.013
1250 22552.6309
2500 45112.0816
5000 90200.1631
8000 144301.202
10000 180410.228
12000 216502.073
15000 270600.342
17500 315730.604
Synthesis can show that the structure linearity is preferable in the embodiment from the simulation result, and linear fit error is on 7% left side It is right.
Embodiment 2:
The present embodiment makes following improvement on the basis of embodiment 1:
As shown in fig. 6, as a preferred embodiment, the component body 1-1 center sides open up the second through-hole The cylinder center side through component body 1-1 of 1-4, the second through-hole 1-4, the geometry of the first through hole 1-3 The geometric center of center and the second through-hole 1-4 overlap.
It is deformed after the upper surface stress of total, power is transmitted in intermediate resonant chip, leads to resonant chip The stress value size of node test corresponding transmission on node after surface applies external force on intermediate harmonic chip is chosen in deformation, The linearity of the structure is evaluated, the results are shown in Figure 7 for force analysis, carries out finite element method and emulates to obtain such as Fig. 8 as a result, right The numerical value answered is as follows:
force(N) STRESS(PA)
1000 6020.10555
1250 7525.13235
2500 15050.261
5000 30100.5294
8000 48160.8444
10000 60201.0588
12000 72241.2666
15000 90301.5882
17500 105352.316
By above-mentioned simulation calculation it can be found that the mode of side punching contributes to stress more to concentrate, entire linearity error 100 times are reduced, the processing of later stage circuit is contributed to.
Operation principle:Quartz crystal oscillator has piezoelectric effect, when applying pressure on crystal wafer, in some direction of crystal Two sides just will produce charge, and a surface generates positive charge, and another surface generates negative electrical charge;If pressure is changed to tension When (pulling force), then charge property is generated just on the contrary, this is direct piezoelectric effect., whereas if when crystal two sides adds voltage, It just will produce the movement of extension or contraction, and this property is known as reciprocal piezoelectric effect.Since quartz crystal has reciprocal piezoelectric effect, Under the action of alternating voltage, crystal will generating period mechanical oscillation, and because it have piezoelectric effect, making the period Property mechanical oscillation when, and the cyclically-varying that crystal two sides charge property will be caused, so, it is sinusoidal just to form one in circuit Alternating current i.The size of alternating current is the amplitude proportional with mechanical oscillation, namely with the amplitude of additional alternating voltage at Direct ratio.The size of amplitude and alternating current that quartz crystal machinery shakes is related with the frequency of additional alternating voltage, when additional When the frequency of alternating voltage is equal to the intrinsic frequency of crystal, the amplitude and alternating current of mechanical oscillation are all maximum, this phenomenon The referred to as piezoelectric resonator of quartz crystal, it is equivalent to the series resonance in the circuits LC.Therefore, crystal oscillator can be equivalent to a LC string The resonant tank of connection,
When external force acts on the edge of quartz wafer, the deformation of quartz wafer can be caused, its resonant frequency is hindered, lead Eigenfrequency is caused to change;The size of external force can be calculated by the variable quantity of inspection frequency.
The above is only preferred embodiments of the present invention, it is noted that for the ordinary skill people of this field For member, without departing from the concept of the premise utility, several modifications and improvements can also be made, these belong to practicality Novel protection domain.

Claims (7)

1. a kind of integral type quartz resonance pressure sensor structure, including sensing element (1) and sensor main body (2), the biography Sensor main body (2) includes pedestal (3), lead (4), bottom plate (5) and external connection (6), and the bottom plate (5) is equipped with amplifying circuit (7), the sensing element (1) is fixed in pedestal (3), and the sensing element (1) and amplifying circuit (7) pass through lead (4) electricity Connection, the external connection (6) are electrically connected with amplifying circuit (7), which is characterized in that the sensing element (1) is all by quartzy structure At, including component body (1-1), resonant chip (1-2) and first through hole (1-3), the component body (1-1) they are cuboid knot Structure, the front center of the component body (1-1) offer first through hole (1-3), first through hole (1-3) center be equipped with The connected resonant chip (1-2) of component body (1-1) integral type.
2. a kind of integral type quartz resonance pressure sensor structure according to claim 1, it is characterised in that:The element In the structure size of ontology (1-1), length, width and height are equal, are 40mm~42mm.
3. a kind of integral type quartz resonance pressure sensor structure according to claim 1, it is characterised in that:Described first Through-hole (1-3) cylinder front center through component body (1-1), the internal diameter of the first through hole (1-3) be 9mm~ 11mm。
4. a kind of integral type quartz resonance pressure sensor structure according to claim 1, it is characterised in that:The resonance Chip (1-2) thickness is 0.200mm~0.210mm, including stress piece (1-2-1) and connection sheet (1-2-2), the stress piece Two panels connection sheet (1-2-2) is extended at the symmetrical both ends (1-2-1), and the connection sheet (1-2-2) is interior with first through hole (1-3) Wall seamless connects.
5. a kind of integral type quartz resonance pressure sensor structure according to claim 4, it is characterised in that:The connection The maximum width of piece (1-2-2) is less than the diameter of stress piece (1-2-1).
6. a kind of integral type quartz resonance pressure sensor structure according to claim 1, it is characterised in that:The element Ontology (1-1) center side opens up the second through-hole (1-4), and second through-hole (1-4) is cylinder through component body (1- 1) center side, the geometric center of the first through hole (1-3) and the geometric center of the second through-hole (1-4) overlap.
7. a kind of integral type quartz resonance pressure sensor structure according to claim 1, it is characterised in that:The amplification Circuit (7) includes resistance Rb1, resistance Rb2, resistance Rc1, resistance Rc2, capacitance C1, variable capacitance C2, triode T1 and triode T2, one end of sensing element is connected with variable capacitance C2 and resistance Rc2 successively is followed by leading-out terminal Ec, the other end of sensing element Be connected respectively with the base stage of one end of resistance Rb1 and triode T1, the other end of the resistance Rb1 successively with capacitance C1 resistance Rb2 series connection is followed by leading-out terminal V0, and the emitter of the triode T1 is grounded with the emitter of triode T2, triode T1's Collector is connected with resistance Rc1 to be followed by the base stage and collector of leading-out terminal EC, the triode T2 and is connected in parallel on the two of resistance Rb2 End.
CN201820589554.3U 2018-04-24 2018-04-24 A kind of integral type quartz resonance pressure sensor structure Active CN208060047U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108332886A (en) * 2018-04-24 2018-07-27 成都奥森泰科技有限公司 A kind of integral type quartz resonance pressure sensor structure
CN110631672A (en) * 2019-10-10 2019-12-31 成都奥森泰科技有限公司 A resonant vehicle dynamic weighing system and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108332886A (en) * 2018-04-24 2018-07-27 成都奥森泰科技有限公司 A kind of integral type quartz resonance pressure sensor structure
CN110631672A (en) * 2019-10-10 2019-12-31 成都奥森泰科技有限公司 A resonant vehicle dynamic weighing system and method

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