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CN207781602U - OLED cell, display panel and display device - Google Patents

OLED cell, display panel and display device Download PDF

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Publication number
CN207781602U
CN207781602U CN201820040989.2U CN201820040989U CN207781602U CN 207781602 U CN207781602 U CN 207781602U CN 201820040989 U CN201820040989 U CN 201820040989U CN 207781602 U CN207781602 U CN 207781602U
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China
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layer
oled cell
infrared
underlay substrate
red light
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CN201820040989.2U
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Chinese (zh)
Inventor
唐国强
徐映嵩
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Abstract

The utility model discloses a kind of OLED cell, display panel and display devices, belong to display technology field.The OLED cell includes:The first electrode layer being arranged on underlay substrate;It is arranged in near-infrared luminous layer of the first electrode layer far from the underlay substrate side, the near-infrared luminous layer is for emitting near infrared light;It is arranged in barrier layer of the near-infrared luminous layer far from the underlay substrate side, the barrier layer is made of an electrically conducting material;It is arranged in red light luminescent layer of the barrier layer far from the underlay substrate side, the red light luminescent layer is for emitting feux rouges;It is arranged in the second electrode lay of the red light luminescent layer far from the underlay substrate side, the polarity of the second electrode lay is opposite with the polarity of the first electrode layer.The utility model simplifies the manufacturing process of display panel, and reduces manufacturing cost.

Description

OLED cell, display panel and display device
Technical field
The utility model is related to display technology field, more particularly to a kind of OLED cell, display panel and display device.
Background technology
Organic Light Emitting Diode (English with fingerprint identification function:Organic Light-Emitting Diode;Letter Claim:OLED it) in display panel, is provided in each luminescence unit:Display OLED cell and near-infrared OLED cell, the display The light for display can be sent out with OLED cell, which can send out the light for fingerprint recognition.
In the related technology, the display OLED cell and the near-infrared OLED cell are arranged independently of each other in display panel On.And the display OLED cell and the near-infrared OLED cell include anode, it is hole injection layer, hole transmission layer, electroluminescent Shine film layer, electron transfer layer, electron injecting layer and cathode etc..
But during manufacturing the OLED display panel with fingerprint identification function, due to being used in manufacture display After OLED cell, it is also necessary to which additional manufacture near-infrared OLED cell causes the manufacturing process of the display panel more complex.
Utility model content
The utility model provides a kind of OLED cell, display panel and display device, can solve the relevant technologies and make During making the OLED display panel with fingerprint identification function, due to after manufacturing display OLED cell, it is also necessary to Additional manufacture near-infrared OLED cell, the problem for causing the manufacturing process of the display panel more complex, the technical solution is as follows:
In a first aspect, providing a kind of OLED cell, the OLED cell includes:
The first electrode layer being arranged on underlay substrate;
It is arranged in near-infrared luminous layer of the first electrode layer far from the underlay substrate side, it is described near-infrared luminous Layer is for emitting near infrared light;
It is arranged in barrier layer of the near-infrared luminous layer far from the underlay substrate side, the barrier layer is by conduction material Material is made;
It is arranged in red light luminescent layer of the barrier layer far from the underlay substrate side, the red light luminescent layer is for sending out Penetrate feux rouges;
It is arranged in the second electrode lay of the red light luminescent layer far from the underlay substrate side, the second electrode lay Polarity is opposite with the polarity of the first electrode layer.
Optionally, the first electrode layer is anode, and the second electrode lay is cathode.
Optionally, the thickness of the red light luminescent layer is more than the thickness of the near-infrared luminous layer.
Optionally, orthographic projection of the near-infrared luminous layer on the underlay substrate with the red light luminescent layer described Orthographic projection on underlay substrate overlaps.
Optionally, the barrier layer is made of transparent conductive material.
Optionally, the barrier layer is made of PN junction material.
Optionally, the near-infrared luminous layer includes:First hole transmission layer, near-infrared electroluminescent film layer and the first electricity Sub- transport layer;
The red light luminescent layer includes:Second hole transmission layer, feux rouges electroluminescent film layer and the second electron transfer layer.
Second aspect, provides a kind of display panel, and the display panel includes any OLED of first aspect mono- Member.
Optionally, the display panel further includes:The photoelectric conversion component being arranged in a one-to-one correspondence with the OLED cell, with And the barricade in the photoelectric conversion component surrounding is set, the barricade is used to block the OLED other than corresponding OLED cell The near infrared light of unit.
The third aspect, provides a kind of display device, and the display device includes any display surface of second aspect Plate.
The advantageous effect that technical solution provided by the utility model is brought is:
The utility model provides a kind of OLED cell, display panel and display device, which includes that series connection is set The near-infrared luminous layer and red light luminescent layer set, the near-infrared luminous layer and the red light luminescent layer can share first electrode layer and Two electrode layers on the basis of manufacture display is with OLED, are not necessarily to additional manufacture near-infrared OLED cell compared to the relevant technologies, The manufacturing process of display panel is simplified, and reduces manufacturing cost.
Description of the drawings
It is required in being described below to embodiment in order to illustrate more clearly of the technical scheme in the embodiment of the utility model Attached drawing to be used is briefly described, it should be apparent that, the accompanying drawings in the following description is only some realities of the utility model Example is applied, it for those of ordinary skill in the art, without creative efforts, can also be according to these attached drawings Obtain other attached drawings.
Fig. 1 is a kind of structural schematic diagram of OLED cell shown in the utility model embodiment;
Fig. 2 is a kind of flow chart of the method for manufacture OLED cell shown in the utility model embodiment;
Fig. 3 is a kind of structural schematic diagram for display panel that the utility model embodiment provides;
Fig. 4 is a kind of schematic diagram for barricade that the utility model embodiment provides;
Fig. 5 is a kind of flow chart of the manufacturing method of display panel shown in the utility model embodiment.
Specific implementation mode
It is new to this practicality below in conjunction with attached drawing to keep the purpose of this utility model, technical solution and advantage clearer Type embodiment is described in further detail.
Fig. 1 is a kind of structural schematic diagram for OLED cell that the utility model embodiment provides, as shown in Figure 1, the OLED Unit may include:
The first electrode layer 002 being arranged on underlay substrate 001.
It is arranged in near-infrared luminous layer 003 of the first electrode layer 002 far from 001 side of underlay substrate, this is near-infrared luminous For layer 003 for emitting near infrared light, which can be transmitted to the finger surface pressed in panel surface, and handle In digital reflex to photoelectric conversion component, which can be converted to electric current of corresponding size by the near infrared light of reception, Fingerprint recognition component in display panel is by being detected the electric current identification, it can be achieved that fingerprint.
It is arranged in barrier layer 004 of the near-infrared luminous layer 003 far from 001 side of underlay substrate, the barrier layer 004 is by conduction Material is made.
It is arranged in red light luminescent layer 005 of the barrier layer 004 far from 001 side of underlay substrate, which is used for Emit feux rouges, the feux rouges is for showing.
It is arranged in the second electrode lay 006 of the red light luminescent layer 005 far from 001 side of underlay substrate, the second electrode lay 006 Polarity it is opposite with the polarity of first electrode layer 002.
In conclusion the utility model embodiment provides a kind of OLED cell, which includes being arranged in series Near-infrared luminous layer and red light luminescent layer, the near-infrared luminous layer and the red light luminescent layer can share first electrode layer and the second electricity Pole layer on the basis of manufacture display is with OLED, without additional manufacture near-infrared OLED cell, simplifies compared to the relevant technologies The manufacturing process of display panel, and reduce manufacturing cost.
Wherein, referring to FIG. 1, the near-infrared luminous layer 003 may include:First hole transmission layer 0031, near-infrared electricity The film layers such as photoluminescence film layer 0032 and the first electron transfer layer 0033.Red light luminescent layer 005 may include:Second hole transmission layer 0051, the film layers such as feux rouges electroluminescent film layer 0052 and the second electron transfer layer 0053.
Optionally, which can also include:First electron-blocking layer (exciton blocking Layer, EBL) and/or other film layers such as the first hole blocking layer (hole blocking layer, HBL).The red light luminescent layer 005 can also include:Other film layers such as the second electron-blocking layer and/or the second hole blocking layer.Also, the near-infrared luminous layer The setting of other film layers included by the setting of other film layers included by 003 and the red light luminescent layer 005 can basis Actual needs is adjusted, and the utility model embodiment is not specifically limited it.
Also, since the energy level of feux rouges and near infrared light is close, required energy when feux rouges and near infrared light is excited to differ not Greatly, on the one hand, in the material of the selection film layers such as the first hole transmission layer 0031 and the first electron transfer layer 0033, and selection the When the material of film layers such as two hole transmission layers 0051 and the second electron transfer layer 0053, the selectable range of material is larger, because This, reduces the manufacture difficulty of the OLED cell;Required energy differs not when on the other hand, due to excitation feux rouges and near infrared light Greatly, therefore, when load on near-infrared luminous layer 003 and red light luminescent layer 005 is for luminous voltage, compared to related skill Art can ensure near-infrared electroluminescent material and red light luminescent layer in near-infrared luminous layer 003 no need to increase the amplitude of voltage The luminescent lifetime of feux rouges electroluminescent material in 005.
Optionally, which can be anode, and the second electrode lay 006 can be cathode.Work as first electrode layer 002 is anode, and when the second electrode lay 006 is cathode, and the feux rouges that red light luminescent layer 005 emits can be penetrated directly after through cathode Go out, the near infrared light that near-infrared luminous layer 003 emits can be penetrated directly after through barrier layer 004, red light luminescent layer 005 and cathode Go out.In such manner, it is possible to be blocked as little as possible to feux rouges formation, to ensure the transmission efficiency of feux rouges, also, since human eye is to near-infrared Light is insensitive, which will not have an impact the coloration of feux rouges, can ensure the normal display of display panel.
Simultaneously as red light luminescent layer 005 hardly picks up near infrared light, therefore, even if near infrared light is needed through red Light luminescent layer 005 could project, and red light luminescent layer 005 will not impact the transmission of near infrared light, can ensure close red The transmission efficiency of outer light, and then ensure being normally carried out for fingerprint identification process.
Further, the thickness of the red light luminescent layer 005 can be more than the thickness of the near-infrared luminous layer 003.The feux rouges The thickness of luminescent layer 005 can reflect the light intensity of the feux rouges of transmitting to a certain extent, be arranged when by the thickness of red light luminescent layer 005 When for more than the thickness of near-infrared luminous layer 003, can ensure feux rouges goes out luminous intensity, farthest to reduce other film layers To the influence degree of the feux rouges of display, and then ensure the normal display of display panel.Also, the red light luminescent layer 005 and should The specific thickness of near-infrared luminous layer 003 can be configured according to actual needs, such as:The thickness of the red light luminescent layer 005 It can be configured according to the luminous intensity that goes out of the microcavity and feux rouges that adjust used in feux rouges, the utility model embodiment, which does not do it, to be had Body limits.
Meanwhile the orthographic projection of the near-infrared luminous layer 003 on underlay substrate 001 and the red light luminescent layer 005 are in substrate Orthographic projection on substrate 001 can overlap.In this way, can use, same mask plate manufactures near-infrared luminous layer 003 and feux rouges is sent out Photosphere 005, to be further simplified the manufacturing process of display panel.
Also, the barrier layer 004 can be made of transparent conductive material.In this manner it is ensured that the transmissivity of near infrared light. Optionally, which can also be made of metal, when the thickness of barrier layer 004 made of metal is less than preset thickness When, the barrier layer 004 is close to transparent, at this point, near infrared light can penetrate the barrier layer 004, and then ensures to examine for fingerprint The light intensity of the light of survey.
In practical application, the principle that the material selection of the barrier layer 004 can refer to is:The barrier layer made of the material 004 is transparent material layer, and the barrier layer 004 made of the material does not absorb the feux rouges and near infrared light of transmitting, and by the material Barrier layer 004 made of material can with the energy level of the first hole transmission layer 0031 and the second electron transfer layer 0053 that are in contact with it Matching.Such as:The material of the barrier layer 004 can be PN junction material, which includes P materials and N materials, wherein N materials Material can be the dopant that trihydroxy closes aluminium (ALQ3) and lithium (Li), and P materials can be hole mobile material NPb and ferric trichloride (FeCl3) dopant;Alternatively, the material of the barrier layer 004 may be transition metal oxide, such as:Its material can be with For molybdenum trioxide (MoO3), the utility model embodiment is not specifically limited it.
It should be noted that since human body infrared wavelength is about 9-14 microns (um), the wavelength of near infrared light is 800um or so, the two wavelength difference it is larger, correspondingly, even if photoelectric conversion component receive it is human body infrared, according to should The human body infrared electric current very little being converted to, fingerprint recognition component are not enough to realize fingerprint recognition according to it, and therefore, human body is red Outside line will not interfere fingerprint recognition result.
In addition, the energy gaps due to the material for forming near-infrared electroluminescent film layer are smaller, answered when by the near infrared light When for fingerprint recognition, which can avoid generating heat and make an uproar compared to infrared or far red light, so can avoid by Glitch caused by heat is dry, can ensure the accuracy of fingerprint recognition.
In conclusion the utility model embodiment provides a kind of OLED cell, which includes being arranged in series Near-infrared luminous layer and red light luminescent layer, the near-infrared luminous layer and the red light luminescent layer can share first electrode layer and the second electricity Pole layer on the basis of manufacture display is with OLED, without additional manufacture near-infrared OLED cell, simplifies compared to the relevant technologies The manufacturing process of display panel, and reduce manufacturing cost.
Fig. 2 is a kind of flow chart of the method for manufacture OLED cell that the utility model embodiment provides, as shown in Fig. 2, This method may include:
Step 201 provides a underlay substrate.
The underlay substrate can be transparent substrate, can be using glass, quartz, transparent resin, polyimides (Polyimide, PI) or sheet metal etc. have substrate made of the optical material of certain degree of hardness.
Step 202 forms first electrode layer on underlay substrate.
Illustratively, when the first electrode layer is anode, magnetron sputtering, thermal evaporation or plasma enhancing may be used Chemical vapour deposition technique (English:Plasma Enhanced Chemical Vapor Deposition;Referred to as:The side such as PECVD) Method deposits one layer on underlay substrate has certain thickness anode material, obtains anode film layer, then passes through a composition work Skill is handled to obtain anode to anode film layer.Wherein, a patterning processes may include:Photoresist coating, exposure, development, Etching and photoresist lift off, the thickness of the first electrode layer and the anode material can be configured according to actual needs, example Such as:The anode material can be metal or tin indium oxide (English:Indium Tin Oxide;Abbreviation:ITO) etc..
It should be noted that the first electrode layer refers to for anode:The first electrode layer includes multiple spaced sun Pole.
Step 203 forms near-infrared luminous layer on the underlay substrate for be formed with first electrode layer, the near-infrared luminous layer For emitting near infrared light.
The near-infrared luminous layer may include:First hole transmission layer, near-infrared electroluminescent film layer and the first electronics pass The film layers such as defeated layer can be according to the first hole transmission layer, near-infrared electroluminescent film layer and when forming near-infrared luminous layer The film layers such as one electron transfer layer are to underlay substrate by closely to remote distance, sequentially forming each film layer.Also, forming some film layer When, the methods of vapor deposition may be used and form one layer on underlay substrate with certain thickness film material, obtain corresponding film Layer, such as:When forming near-infrared electroluminescent film layer, the methods of vapor deposition may be used and be formed with the first hole transmission layer One layer is formed on underlay substrate has certain thickness near-infrared electroluminescent material, to obtain near-infrared electroluminescent film layer. Wherein, the thickness and material of each film layer can be configured according to actual needs.Such as:The near-infrared electroluminescent material can be with For the compound containing trivalent chromic ion.
Step 204 forms barrier layer using conductive material on the underlay substrate for being formed with near-infrared luminous layer.
It is alternatively possible to which forming one layer on the underlay substrate for being formed with near-infrared luminous layer using the methods of vapor deposition has Certain thickness barrier material obtains corresponding barrier layer.Wherein, the thickness of the barrier layer and material can be according to practical need It is configured.Such as:The material of the barrier layer can be PN junction material, wherein N materials can be that trihydroxy closes aluminium (ALQ3) With the dopant of lithium (Li), P materials can be the dopant of hole mobile material NPb and ferric trichloride (FeCl3), this practicality is new Type embodiment is not specifically limited it.
Step 205 forms red light luminescent layer on the underlay substrate for be formed with barrier layer, and the red light luminescent layer is for emitting Feux rouges.
The red light luminescent layer may include:Second hole transmission layer, feux rouges electroluminescent film layer and the second electron transfer layer Etc. film layers can be passed according to the second hole transmission layer, feux rouges electroluminescent film layer and the second electronics when forming red light luminescent layer The film layers such as defeated layer are to underlay substrate by closely to remote distance, sequentially forming each film layer.It, can be with also, when forming some film layer Forming one layer on underlay substrate using the methods of vapor deposition has certain thickness film material, obtains corresponding film layer, such as: When forming feux rouges electroluminescent film layer, the methods of vapor deposition may be used on the underlay substrate for being formed with the second hole transmission layer Forming one layer has certain thickness feux rouges electroluminescent material, to obtain feux rouges electroluminescent film layer.Wherein, the thickness of each film layer Degree and material can be configured according to actual needs.
It should be noted that before executing step 203 to step 205, it is also necessary in the lining for being formed with first electrode layer Pixel defining layer is formed on substrate, and near-infrared luminous layer, resistance are then formed in the pixel region that pixel defining layer limits Interlayer and red light luminescent layer.
Step 206 forms the second electrode lay on the underlay substrate for be formed with red light luminescent layer.
Optionally, when the second electrode lay is cathode, the methods of magnetron sputtering, thermal evaporation or PECVD may be used One layer is deposited on underlay substrate has certain thickness cathode material, obtains cathode film layer, then passes through a patterning processes Cathode membrane layer is handled to obtain cathode.Wherein, a patterning processes may include:Photoresist coating, development, is carved at exposure Erosion and photoresist lift off, the thickness of the second electrode lay and the cathode material can be configured according to actual needs.
Illustratively, the structural schematic diagram of the underlay substrate after the second electrode lay is formed referring to FIG. 1, the underlay substrate 001 On be cascading have first electrode layer 002, near-infrared luminous layer 003, barrier layer 004, red light luminescent layer 005 and second electricity Pole layer 006, and for the ease of watching, pixel defining layer is not shown in the Fig. 1.
In conclusion the utility model embodiment provides a kind of method of manufacture OLED cell, which includes The near-infrared luminous layer and red light luminescent layer being arranged in series, the near-infrared luminous layer and the red light luminescent layer can share first electrode Layer and the second electrode lay, compared to the relevant technologies, on the basis of manufacture display is with OLED, without additional manufacture near-infrared OLED Unit, simplifies the manufacturing process of display panel, and reduces manufacturing cost.
Fig. 3 is a kind of structural schematic diagram for display panel that the utility model embodiment provides, which can be Current drive-type display panel, such as:The display panel can be with two pole of active matrix organic light-emitting of constant current driven Pipe (English:Active matrix organic light emitting diode;Abbreviation:AMOLED) display panel.Such as Fig. 3 Shown, which may include multiple pixel units, and each pixel unit includes what the utility model embodiment provided OLED cell 00 (for ease of description, being referred to as feux rouges OLED cell), the feux rouges OLED cell is for emitting for showing Feux rouges and transmitting for fingerprint recognition near infrared light.Also, can also include in each pixel unit:It is shown for emitting (do not shown in Fig. 3 with the green light OLED cell (being not shown in Fig. 3) of green light and the Nan dian Yao unit for emitting display blue light Go out).
Further, referring to FIG. 4, each pixel unit can also include:It is set with the one-to-one correspondence of feux rouges OLED cell 00 The photoelectric conversion component 016 set, and the barricade 019 in 016 surrounding of photoelectric conversion component is set, the barricade 019 is for blocking The near infrared light of feux rouges OLED cell transmitting other than corresponding feux rouges OLED cell 00 so that the photoelectric conversion component 016 The near infrared light for emitting and handling digital reflex from the correspondence feux rouges OLED cell 00 is only received as possible, in order to photoelectric conversion component The near infrared light is only converted to electric current by 016 as possible, make fingerprint recognition component in display panel according to transformed electric current into Row fingerprint recognition to shield interference of the near infrared light in other pixel units to fingerprint recognition, and then improves fingerprint recognition Accuracy.
And it is possible to which the set-up mode of adjustment barricade illustratively can be by photoelectric conversion component surrounding according to actual needs Dams setting be with identical height, alternatively, can also be arranged photoelectric conversion component surrounding barricade have different height, Such as:The height that can be arranged close to the barricade of photoelectric conversion component side is less than the barricade far from photoelectric conversion component side Highly, and the specific height number of the barricade of photoelectric conversion component surrounding can according to the parameters such as the light-emitting angle of near infrared light into Row setting.
Further, photoelectric conversion component can also be set and be less than pre-determined distance at a distance from feux rouges OLED cell, according to The pre-determined distance can significantly distinguish other OLED cells feux rouges OLED cell corresponding with photoelectric conversion component, and The numerical value of the pre-determined distance can be configured according to actual needs.In this way, handling digital reflex and exposing to photoelectric conversion component Near infrared light there is larger light intensity, carry out fingerprint recognition according to the electric current after opto-electronic conversion is carried out to the larger light intensity When, the accuracy of fingerprint recognition can be improved.
In the utility model embodiment, the near-infrared luminous layer in each pixel can be considered a near-infrared luminous sub- picture Element, the red light luminescent layer in each pixel can be considered a feux rouges sub-pixel, due to near-infrared luminous layer in each pixel and Red light luminescent layer is arranged in series, and the sum of the feux rouges sub-pixel on display panel is equal with the sum of near-infrared luminous sub-pixel, And it is respectively provided with that there are one near-infrared luminous sub-pixels in each pixel unit, it therefore, can be at the corresponding position of each pixel Fingerprint recognition is realized, correspondingly, can realize the fingerprint recognition of high-resolution on the display panel.
Simultaneously as including the near-infrared luminous layer being arranged in series in the feux rouges OLED cell of each pixel unit and red Therefore the OLED cell can be used as touch control unit by light luminescent layer, to detect the touching signals of panel surface, compared to The relevant technologies, it is possible to reduce the setting of touch control unit on display panel, also, the OLED cell as touch control unit is made in In screen (in cell touch), additionally it is possible to reduce dependence of the conventional display panels to plug-in touch control unit.
In conclusion the utility model embodiment provides a kind of display panel, the OLED cell of the display panel includes The near-infrared luminous layer and red light luminescent layer being arranged in series, the near-infrared luminous layer and the red light luminescent layer can share first electrode Layer and the second electrode lay, compared to the relevant technologies, on the basis of manufacture display is with OLED, without additional manufacture near-infrared OLED Unit, simplifies the manufacturing process of display panel, and reduces manufacturing cost.
This provides a kind of manufacturing method of display panel to the utility model embodiment, as shown in figure 5, this method can wrap It includes:
Step 301, formation includes the preceding film layer structure of TFT on underlay substrate.
The preceding film layer structure can refer to the film layer structure that is formed on underlay substrate before forming OLED cell.It please join Examine Fig. 3, according to underlay substrate by closely to remote distance, buffering (buffer) layer is sequentially formed on the underlay substrate 001 011, polysilicon (P-SI) active layer 012, gate insulation layer (Gate Insulator, abbreviation:GI) 013, grid (gate) 014, Interlayer dielectric layer 015, photoelectric conversion layer 016, source-drain electrode figure 017 and first flatness layer 018 etc..
Wherein, source-drain electrode figure 017 may include source electrode, drain electrode, signal wire and data line etc., in photoelectric conversion layer 016 Multiple photoelectric conversion components are provided with, optionally, which can be made of GaAs (GaAs) material.
It should be noted that since the photoelectric conversion layer 016 manufacture is on interlayer dielectric layer 015, and be manufactured without in backboard On (backplane, BP), therefore the manufacturing method will not impact BP techniques.
Step 302 forms OLED cell before being formed on the underlay substrate of film layer structure.
The method of the formation OLED cell please accordingly refers to the side for the manufacture OLED cell that the utility model embodiment provides Method, details are not described herein again.
It should be noted that before forming OLED cell, via can be formed on the first flatness layer, the via is in substrate Orthographic projection on substrate is located at drain electrode in the orthographic projection on underlay substrate so that in the anode in forming OLED cell, Anode material can be deposited in the via, to realize being electrically connected for anode and drain electrode.Illustratively, the film layer structure before being formed with Underlay substrate on formed OLED cell 00 after structural schematic diagram please refer to Fig.3.
Step 303 forms the second flatness layer on the underlay substrate for be formed with OLED cell.
After forming OLED cell, apart from farthest film surface, there may be sections with underlay substrate in OLED cell Therefore difference after forming OLED cell, can also form the second flatness layer on the underlay substrate for be formed with OLED cell, with Reduce the segment difference between film layer.
In conclusion the utility model embodiment provides a kind of manufacturing method of display panel, the display panel OLED cell includes the near-infrared luminous layer and red light luminescent layer being arranged in series, and the near-infrared luminous layer and the red light luminescent layer can First electrode layer and the second electrode lay are shared, compared to the relevant technologies, on the basis of manufacture display is with OLED, without additional system Near-infrared OLED cell is made, the manufacturing process of display panel is simplified, and reduces manufacturing cost.
The utility model embodiment additionally provides a kind of display device, which includes that the utility model embodiment carries The display panel of confession.The display device can be:Liquid crystal display panel, Electronic Paper, mobile phone, tablet computer, television set, display, pen Remember any product or component with display function such as this computer, Digital Frame, navigator.
The above is only the preferred embodiment of the present invention, is not intended to limit the utility model, all in this practicality Within novel spirit and principle, any modification, equivalent replacement, improvement and so on should be included in the guarantor of the utility model Within the scope of shield.

Claims (10)

1. a kind of OLED cell, which is characterized in that the OLED cell includes:
The first electrode layer being arranged on underlay substrate;
It is arranged in near-infrared luminous layer of the first electrode layer far from the underlay substrate side, the near-infrared luminous layer is used In transmitting near infrared light;
It is arranged in barrier layer of the near-infrared luminous layer far from the underlay substrate side, the barrier layer is by conductive material system At;
It is arranged in red light luminescent layer of the barrier layer far from the underlay substrate side, the red light luminescent layer is red for emitting Light;
It is arranged in the second electrode lay of the red light luminescent layer far from the underlay substrate side, the polarity of the second electrode lay It is opposite with the polarity of the first electrode layer.
2. OLED cell according to claim 1, which is characterized in that the first electrode layer is anode, second electricity Pole layer is cathode.
3. OLED cell according to claim 1 or 2, which is characterized in that the thickness of the red light luminescent layer is more than described The thickness of near-infrared luminous layer.
4. OLED cell according to claim 1 or 2, which is characterized in that the near-infrared luminous layer is in the substrate base Orthographic projection on plate is overlapped with orthographic projection of the red light luminescent layer on the underlay substrate.
5. OLED cell according to claim 1 or 2, which is characterized in that the barrier layer is made of transparent conductive material.
6. OLED cell according to claim 1 or 2, which is characterized in that the barrier layer is made of PN junction material.
7. OLED cell according to claim 1 or 2, which is characterized in that the near-infrared luminous layer includes:First hole Transport layer, near-infrared electroluminescent film layer and the first electron transfer layer;
The red light luminescent layer includes:Second hole transmission layer, feux rouges electroluminescent film layer and the second electron transfer layer.
8. a kind of display panel, which is characterized in that the display panel includes any OLED cell of claim 1 to 7.
9. display panel according to claim 8, which is characterized in that the display panel further includes:It is mono- with the OLED The photoelectric conversion component that member is arranged in a one-to-one correspondence, and the barricade in the photoelectric conversion component surrounding is set, the barricade is used In the near infrared light for blocking the OLED cell other than corresponding OLED cell.
10. a kind of display device, which is characterized in that the display device includes the display panel described in claim 8 or 9.
CN201820040989.2U 2018-01-10 2018-01-10 OLED cell, display panel and display device Active CN207781602U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201820040989.2U CN207781602U (en) 2018-01-10 2018-01-10 OLED cell, display panel and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201820040989.2U CN207781602U (en) 2018-01-10 2018-01-10 OLED cell, display panel and display device

Publications (1)

Publication Number Publication Date
CN207781602U true CN207781602U (en) 2018-08-28

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Country Link
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