CN207582004U - A kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device - Google Patents
A kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device Download PDFInfo
- Publication number
- CN207582004U CN207582004U CN201721529377.1U CN201721529377U CN207582004U CN 207582004 U CN207582004 U CN 207582004U CN 201721529377 U CN201721529377 U CN 201721529377U CN 207582004 U CN207582004 U CN 207582004U
- Authority
- CN
- China
- Prior art keywords
- reflection
- guide shell
- screen
- single crystal
- shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device, including graphite guide shell and radiation shield, radiation shield is equipped on the outside of graphite guide shell, the radiation shield includes screen and thermal insulation layer in the interior screen of reflection, reflection external screen, reflection, and screen is set on the outside of graphite guide shell in reflection, reflects external screen and screen connection in reflection, and the screen outside in reflection, shield in transmitting and be set on screen in reflection and reflect between external screen, and be fixed in reflection on screen, thermal insulation layer, which is filled in, to be reflected in the space that interior screen is formed with reflection external screen.The utility model of simple structure and strong practicability improves the quality of institute's drawn monocrystalline silicon, improves productivity, reduces production cost, increases single crystal growing furnace Acceptable life.
Description
Technical field
The utility model is related to monocrystalline manufacturing technology field, especially with a kind of heat-insulated dress of single crystal growing furnace molybdenum guide shell thermal field
The structure put is related.
Background technology
The important materials of the advanced equipments of high grade and precision such as integrated circuit and solar panel during monocrystalline silicon, to the quality of monocrystalline silicon
There are suitable strict requirements, there is serious failure in avoid equipment use when, when manufacturing monocrystalline silicon by single crystal growing furnace vertical pulling method,
Guide shell will play a crucial role the quality of monocrystalline silicon quality, guide shell by control air-flow in single crystal growing furnace so as to
Pulling monocrystal, due to keep different temperature gradients in pulling monocrystal, the guide shell as guide functions will meet,
It first has to hinder the heat radiation below guide shell, while the temperature change in guide shell to be kept to stablize, in the prior art, only
It effectively cannot accomplish to hinder lower section heat radiation using graphite guide shell and keep temperature steady change in guide shell, and
The material on graphite guide shell surface peels off caused by working in the high temperature environment for a long time, influences the quality of monocrystalline silicon,
So as to cause the reduction of production efficiency, increase production cost, reduce the Acceptable life of single crystal growing furnace.
In conclusion the guide shell prior art be primarily present more than it is insufficient, it is impossible to it is effective hinder lower section heat radiation and
Keep temperature steady change in guide shell；Influence the quality of institute's drawn monocrystalline silicon；Production efficiency reduces；The production cost increases；It is single
Brilliant stove Acceptable life reduces.
Utility model content
The utility model provides a kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device, to solve the above-mentioned prior art not
Foot effectively hinders lower section heat radiation and keeps temperature steady change in guide shell, improves the quality of institute's drawn monocrystalline silicon, carry
High production rate reduces production cost, increases single crystal growing furnace Acceptable life, has stronger practicability.
In order to realize the purpose of this utility model, intend using following technology：
A kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device, including graphite guide shell and radiation shield, graphite guide shell outside
Equipped with radiation shield, the radiation shield includes screen and thermal insulation layer in the interior screen of reflection, reflection external screen, reflection, and screen is set on stone in reflection
On the outside of black guide shell, reflection external screen is connected with screen in reflection, and the screen outside in reflection, in transmitting screen be set in reflection screen with
It reflects between external screen, and is fixed on the interior screen of reflection, thermal insulation layer is filled in reflection in the space of screen and reflection external screen composition.
Further, the graphite guide shell lower part is equipped with deflector hole.
Further, the radiation shield material therefor is molybdenum.
Further, the radiation shield is smooth surface.
Further, screen shields and forms in being reflected by multiple circular arc types in the reflection, and concave surface is towards graphite guide shell
It is interior.
The advantages of above-mentioned technical proposal, is：
1st, compared with prior art, the radiation shield that single crystal growing furnace molybdenum guide shell thermal field heat-proof device is equipped with, to thermal field in stove
Effective heat-blocking action is produced, improves monocrystalline cooling effect in stove, can directly improve pulling rate, improves production
Rate, and the radiation shield in outside to graphite guide shell there are certain protective capacities, so as to extend the physical life of single crystal growing furnace,
Reduce production cost；
2nd, compared with prior art, shield in the reflection that single crystal growing furnace molybdenum guide shell thermal field heat-proof device is equipped with, due to its circle
Lower section heat radiation can be carried out the second secondary reflection by the shape of camber, can effectively avoid monocrystalline in graphite guide shell by
The heat radiation sent out in graphite guide shell so as to influence the quality of monocrystalline silicon, while can be carried out secondary collection simultaneously by thermal shock
Reflection, so that it is guaranteed that the variation that the temperature in graphite guide shell is stablized, so that it is guaranteed that the quality of institute's crystal-pulling；
3rd, the utility model provides a kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device, effectively hinder lower section heat radiation with
And temperature steady change in guide shell is kept, the quality of institute's drawn monocrystalline silicon is improved, improves productivity, reduces production cost, is increased
Add single crystal growing furnace Acceptable life, there is stronger practicability.
Description of the drawings
Fig. 1 shows the utility model structure chart.
Specific embodiment
As shown in Figure 1, a kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device, including graphite guide shell 10 and radiation shield 20,
10 outside of graphite guide shell is equipped with radiation shield 20,
The radiation shield 20 includes shielding screen 23 and thermal insulation layer 30 in 21, reflection external screen 22, reflection in reflection, reflects interior shield
21 are set on 10 outside of graphite guide shell, and reflection external screen 22 is connect with reflecting interior screen 21, and shields 21 outsides in reflection, in transmitting
Screen 23 is set in reflection between screen 21 and reflection external screen 22, and is fixed in reflection on screen 21, and thermal insulation layer 30 is filled in reflection
In the space that screen 21 is formed with reflection external screen 22.
10 lower part of graphite guide shell is equipped with deflector hole 11.
20 material therefor of radiation shield is molybdenum.
The radiation shield 20 is smooth surface.
Screen 23 forms in screen 23 is reflected by multiple circular arc types in the reflection, and concave surface is towards in graphite guide shell 10.
The utility model in use due to the radiation shield 20 being equipped in 10 outside of graphite guide shell, first can
Protect graphite guide shell 10, then in graphite guide shell 10 temperature play the role of it is stable, finally can be anti-to the greatest extent
Penetrate lower section heat radiation.Above-mentioned reflex is mainly completed by triple reflection, first when the heat of lower section radiates upwards, successively
It has passed through and shield in screen 23 and reflection in reflection external screen 22, thermal insulation layer 30, reflection, when heat radiation is by reflection external screen 22, by
The heat radiation of a part is reflected in its smooth surface, a portion has passed through reflection external screen 22 and enters thermal insulation layer 30, heat-insulated
Layer 30 absorbs a part of heat, and unabsorbed part, which continues to be radiated in reflection, shields 23, due to shielding 23 unique shapes in reflection
Shape reflects back most of heat, when not reflecting interior screen 21 by the arrival of reflective portion on a small quantity, will continue to be reflected, so as to arrive
It has been a seldom part for initial radiation up to the heat in graphite guide shell.Heat is given off in another aspect graphite guide shell 10
When, due to the collection sexual reflex effect of screen 23 in reflection so that the temperature loss in graphite guide shell 10 is less, therefore graphite guide
Temperature change in flow cartridge is also smaller, this allows for promoting pulling rate in crystal pulling process, so as to improve productivity, improves
The quality of monocrystalline, reduces production cost, has stronger practicability.
Claims (5)
1. a kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device, which is characterized in that including graphite guide shell（10）With radiation shield
（20）, graphite guide shell（10）Outside is equipped with radiation shield（20）, the radiation shield（20）Including shielding in reflection（21）, reflection external screen
（22）, shield in reflection（23）And thermal insulation layer（30）, reflect interior shield（21）Set on graphite guide shell（10）External screen is reflected in outside
（22）With shielding in reflection（21）Connection, and shield in reflection（21）Outside is shielded in transmitting（23）Shield in reflection（21）With
Reflect external screen（22）Between, and be fixed in reflection and shield（21）On, thermal insulation layer（30）It is filled in reflection and shields（21）It is outer with reflecting
Screen（22）In the space of composition.
2. single crystal growing furnace molybdenum guide shell thermal field heat-proof device according to claim 1, which is characterized in that the graphite guide shell
（10）Lower part is equipped with deflector hole（11）.
3. single crystal growing furnace molybdenum guide shell thermal field heat-proof device according to claim 1, which is characterized in that the radiation shield（20）
Material therefor is molybdenum.
4. single crystal growing furnace molybdenum guide shell thermal field heat-proof device according to claim 1, which is characterized in that the radiation shield（20）
It is smooth surface.
5. single crystal growing furnace molybdenum guide shell thermal field heat-proof device according to claim 1, which is characterized in that shield in the reflection
（23）Shield in being reflected by multiple circular arc types（23）Composition, and concave surface is towards graphite guide shell（10）It is interior.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721529377.1U CN207582004U (en) | 2017-11-16 | 2017-11-16 | A kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721529377.1U CN207582004U (en) | 2017-11-16 | 2017-11-16 | A kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207582004U true CN207582004U (en) | 2018-07-06 |
Family
ID=62732126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721529377.1U Expired - Fee Related CN207582004U (en) | 2017-11-16 | 2017-11-16 | A kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207582004U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172585A (en) * | 2018-11-12 | 2020-05-19 | 上海新昇半导体科技有限公司 | Reflecting screen of single crystal growth furnace and single crystal growth furnace |
-
2017
- 2017-11-16 CN CN201721529377.1U patent/CN207582004U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172585A (en) * | 2018-11-12 | 2020-05-19 | 上海新昇半导体科技有限公司 | Reflecting screen of single crystal growth furnace and single crystal growth furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105483825B (en) | A kind of bromine lead caesium method for preparing single crystal | |
| CN102352530B (en) | Heat shield device for CZ-Si single crystal furnace | |
| CN105239150A (en) | Flow guide cylinder for monocrystal silicon growth furnace and application thereof | |
| CN102677158A (en) | Kyropoulos crystal growing furnace with auxiliary chamber structure | |
| CN207582004U (en) | A kind of single crystal growing furnace molybdenum guide shell thermal field heat-proof device | |
| CN104328485B (en) | Guide cylinder for improving growth speed of czochralski silicon single crystal | |
| CN206157273U (en) | Novel single crystal growing furnace | |
| CN204080179U (en) | A kind of polycrystalline ingot furnace thermal field structure | |
| CN109930200A (en) | Heat shielding and monocrystalline silicon growing furnace structure | |
| CN207294942U (en) | A kind of efficient monocrystal growing furnace with graphite and the compound heat shielding of water cooling | |
| CN203976975U (en) | A kind of polycrystalline silicon ingot or purifying furnace heat exchange platform and polycrystalline silicon ingot or purifying furnace | |
| TWI767477B (en) | A heat shield structure for single crystal silicon growth furnace and single crystal silicon growth furnace | |
| CN203583004U (en) | Sectional type suspended heat shield | |
| CN102758245A (en) | Deoxidizing type single crystal furnace | |
| CN206902281U (en) | A kind of single crystal growing furnace | |
| CN111926380A (en) | Heat shield device for single crystal production furnace, control method and single crystal production furnace | |
| CN202187081U (en) | Thermal field of single crystal furnace | |
| CN203021676U (en) | Flow guide tube for increasing growth rate of monocrystalline silicon | |
| CN108018600A (en) | Monocrystal growing furnace heat shielding and its manufacture method | |
| CN103695998B (en) | The Kyropoulos furnace thermal field system of loss low in calories | |
| CN106894082A (en) | Monocrystalline silicon growing furnace | |
| CN202116690U (en) | Thermal field system of silicon single crystal furnace | |
| CN202766655U (en) | Heat shield for Czochralski silicon single crystal furnace | |
| CN208517577U (en) | A kind of semiconductor silicon single crystal furnace with concealed heater | |
| CN206768273U (en) | A kind of semiconductor single-crystal growth thermal field |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180706 Termination date: 20191116 |