CN207529934U - A kind of LED array structure and display device - Google Patents
A kind of LED array structure and display device Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 6
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- 238000006243 chemical reaction Methods 0.000 claims description 5
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- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
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Abstract
本实用新型公开了一种发光二极管阵列结构及显示装置，所述发光二极管阵列结构包括第一基板、形成在所述第一基板上的多个发光二极管，多个发光二极管之间、以及发光二极管与所述第一基板之间填充有弹性材料。本实用新型公开的发光二极管阵列结构及显示装置，通过在发光二极管之间、以及发光二极管与基板之间填充弹性材料，实现对发光二极管芯片的包覆，以弹性材料作为柔性屏体弯折过程的应力释放层，可防止脆性的发光二极管芯片损伤。
The utility model discloses a light-emitting diode array structure and a display device. The light-emitting diode array structure includes a first substrate, a plurality of light-emitting diodes formed on the first substrate, a plurality of light-emitting diodes, and a light-emitting diode An elastic material is filled between the first substrate and the first substrate. The light-emitting diode array structure and display device disclosed in the utility model realize the coating of the light-emitting diode chip by filling elastic materials between the light-emitting diodes and between the light-emitting diodes and the substrate, and use the elastic material as the flexible screen body in the bending process The stress release layer can prevent the brittle light-emitting diode chip from being damaged.
Description
技术领域technical field
本实用新型涉及显示技术领域，尤其涉及一种发光二极管阵列结构及显示装置。The utility model relates to the field of display technology, in particular to a light emitting diode array structure and a display device.
背景技术Background technique
Micro-LED技术是指在微小尺寸内集成高密度LED(Light Emitting Diode，发光二极管)阵列的技术，在应用至显示领域时，其可以将像素点距离从毫米级降低至微米级。相比于其他微显示技术，由于该类显示设备自发光，光学系统简单，可以减少整体系统的体积、重量、成本，同时兼顾低功耗、快速反应等特性。Micro-LED technology refers to the technology of integrating high-density LED (Light Emitting Diode, light-emitting diode) arrays in a tiny size. When applied to the display field, it can reduce the pixel distance from millimeters to microns. Compared with other micro-display technologies, due to the self-illumination of this type of display device, the optical system is simple, which can reduce the volume, weight and cost of the overall system, while taking into account the characteristics of low power consumption and fast response.
在实现过程中，会存在以下问题：难以保证脆性的LED器件制作柔性面板时的弯折可靠性。In the implementation process, there will be the following problems: it is difficult to ensure the bending reliability of brittle LED devices when making flexible panels.
实用新型内容Utility model content
本实用新型的主要目的在于提出一种发光二极管阵列结构及显示装置，旨在解决现有技术存在的问题。The main purpose of the utility model is to provide a light-emitting diode array structure and a display device, aiming to solve the problems existing in the prior art.
为实现上述目的，本实用新型实施例第一方面提供一种发光二极管阵列结构，所述发光二极管阵列结构包括第一基板、形成在所述第一基板上的多个发光二极管，多个发光二极管之间、以及发光二极管与所述第一基板之间填充有弹性材料。In order to achieve the above purpose, the first aspect of the embodiment of the present invention provides a light emitting diode array structure, the light emitting diode array structure includes a first substrate, a plurality of light emitting diodes formed on the first substrate, a plurality of light emitting diodes Elastic materials are filled between the light-emitting diodes and the first substrate.
可选的，所述弹性材料包括聚氨酯、硅橡胶或聚酰亚胺。Optionally, the elastic material includes polyurethane, silicone rubber or polyimide.
可选的，所述发光二极管包括电子层、发光层、空穴层以及电极；所述发光层形成于所述电子层和所述空穴层之间。Optionally, the light emitting diode includes an electron layer, a light emitting layer, a hole layer and electrodes; the light emitting layer is formed between the electron layer and the hole layer.
可选的，所述发光二极管阵列结构还包括形成在所述空穴或电子层上的缓冲层；所述缓冲层形成于所述空穴或电子层上远离发光层的一侧。Optionally, the light emitting diode array structure further includes a buffer layer formed on the hole or electron layer; the buffer layer is formed on a side of the hole or electron layer away from the light emitting layer.
可选的，所述缓冲层的材料包括氮化铝或氮化镓。Optionally, the material of the buffer layer includes aluminum nitride or gallium nitride.
可选的，所述第一基板的材料包括聚对苯二甲酸乙二醇酯、聚甲基丙烯酸甲酯、聚酰亚胺、聚氨酯、硅橡胶中的一种。Optionally, the material of the first substrate includes one of polyethylene terephthalate, polymethyl methacrylate, polyimide, polyurethane, and silicone rubber.
可选的，所述发光二极管阵列结构还包括用于与所述第一基板进行贴合的第二基板，所述第二基板包括光转换层。Optionally, the light emitting diode array structure further includes a second substrate for bonding with the first substrate, and the second substrate includes a light conversion layer.
此外，为实现上述目的，本实用新型实施例第二方面提供一种显示装置，所述显示装置包括上述的发光二极管阵列。In addition, in order to achieve the above object, the second aspect of the embodiment of the present invention provides a display device, the display device includes the above light emitting diode array.
本实用新型实施例提供的发光二极管阵列结构及显示装置，通过在发光二极管之间、以及发光二极管与基板之间填充弹性材料，实现对发光二极管芯片的包覆，以弹性材料作为柔性屏体弯折过程的应力释放层，可防止脆性的发光二极管芯片损伤。The light-emitting diode array structure and the display device provided by the embodiment of the utility model realize the covering of the light-emitting diode chip by filling elastic materials between the light-emitting diodes and between the light-emitting diodes and the substrate, and use the elastic material as the flexible screen bend The stress release layer in the folding process can prevent the brittle light-emitting diode chip from being damaged.
附图说明Description of drawings
图1为本实用新型实施例的发光二极管阵列结构示意图。FIG. 1 is a schematic diagram of the structure of a light emitting diode array according to an embodiment of the present invention.
附图标记说明：Explanation of reference signs:
第一基板11、发光二极管12、弹性材料13、电极121、电子层122、124、发光层123、空穴层124、122、光转换层14。The first substrate 11 , the light emitting diode 12 , the elastic material 13 , the electrode 121 , the electron layers 122 , 124 , the light emitting layer 123 , the hole layers 124 , 122 , and the light conversion layer 14 .
本实用新型目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。The realization of the purpose of the utility model, functional characteristics and advantages will be further described in conjunction with the embodiments and with reference to the accompanying drawings.
具体实施方式Detailed ways
在本实用新型的描述中，需要理解的是，术语中“中心”、“上”、“下”、“前”、“后”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本实用新型和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本实用新型的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by "center", "upper", "lower", "front", "rear", "left", "right" etc. in terms is Based on the orientation or positional relationship shown in the drawings, it is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot It should be understood as a limitation of the present utility model. In addition, the terms "first" and "second" are used for descriptive purposes only, and should not be understood as indicating or implying relative importance.
在本实用新型的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“连接”、“相连”应做广义理解，例如，可以是固定连接，也可以是拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以是通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本实用新型的具体含义。此外，在本实用新型的描述中，除非另有说明，“多个”、“若干”的含义是两个或两个以上。In the description of the present utility model, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a disassembly Connected, or integrally connected; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present utility model in specific situations. In addition, in the description of the present utility model, unless otherwise specified, the meanings of "plurality" and "several" are two or more.
第一实施例first embodiment
如图1所示，本实用新型第一实施例提供一种发光二极管阵列结构，所述发光二极管阵列结构包括第一基板11、形成在所述第一基板11上的多个发光二极管12，多个发光二极管12之间、以及发光二极管12与所述第一基板11之间填充有弹性材料13；As shown in Figure 1, the first embodiment of the present invention provides a light emitting diode array structure, the light emitting diode array structure includes a first substrate 11, a plurality of light emitting diodes 12 formed on the first substrate 11, multiple An elastic material 13 is filled between the light emitting diodes 12 and between the light emitting diodes 12 and the first substrate 11;
在本实施例中，所述第一基板的材料可选自聚对苯二甲酸乙二醇酯、聚甲基丙烯酸甲酯、聚酰亚胺、聚氨酯、硅橡胶等柔性有机材料。In this embodiment, the material of the first substrate may be selected from flexible organic materials such as polyethylene terephthalate, polymethyl methacrylate, polyimide, polyurethane, and silicone rubber.
所述发光二极管12包括电子层122、124、发光层123、空穴层124、122以及电极；所述发光层123形成于所述电子层122、124和所述空穴层124、122之间。当靠近所述第一基板11的为电子层122时，则位于远离所述第一基板11的为空穴层124；当靠近所述第一基板11的为空穴层124时，则位于远离所述第一基板11的为电子层122。The light-emitting diode 12 includes electron layers 122, 124, a light-emitting layer 123, hole layers 124, 122 and electrodes; the light-emitting layer 123 is formed between the electron layers 122, 124 and the hole layers 124, 122 . When the electron layer 122 is close to the first substrate 11, the hole layer 124 is located away from the first substrate 11; when the hole layer 124 is located close to the first substrate 11, it is located far away The first substrate 11 is an electronic layer 122 .
所述发光二极管阵列结构还包括形成在所述空穴124或电子层122上的缓冲层；所述缓冲层形成于所述空穴或电子层124或122上远离发光层123的一侧。The light emitting diode array structure further includes a buffer layer formed on the hole 124 or electron layer 122 ; the buffer layer is formed on the side of the hole or electron layer 124 or 122 away from the light emitting layer 123 .
在一种实施方式中，如图1所示，所述发光二极管阵列结构还包括形成在所述空穴层124上的缓冲层(附图未示出)；所述缓冲层形成于所述空穴层124上远离发光层123的一侧。In one embodiment, as shown in FIG. 1 , the LED array structure further includes a buffer layer (not shown in the drawings) formed on the hole layer 124; the buffer layer is formed on the hole layer 124. The side of the hole layer 124 away from the light emitting layer 123 .
在一种实施方式中，(图中未显示)所述发光二极管阵列结构还包括形成在所述电子层124上的缓冲层(附图未示出)；所述缓冲层形成于所述电子层124上远离发光层123的一侧。In one embodiment, (not shown in the figure) the LED array structure further includes a buffer layer (not shown in the figure) formed on the electronic layer 124; the buffer layer is formed on the electronic layer 124 on the side away from the light emitting layer 123.
所述缓冲层的材料可选自氮化铝(AlN)、氮化镓(GaN)等材料。The material of the buffer layer may be selected from aluminum nitride (AlN), gallium nitride (GaN) and other materials.
在本实施例中，所述弹性材料包括聚氨酯、硅橡胶或聚酰亚胺。通过在发光二极管12之间及所述发光二极管12与第一基板11之间填充弹性材料13，实现对发光二极管芯片的包覆，以弹性材料作为柔性屏体弯折过程的应力释放层，可防止脆性的发光二极管芯片损伤。In this embodiment, the elastic material includes polyurethane, silicone rubber or polyimide. By filling the elastic material 13 between the light-emitting diodes 12 and between the light-emitting diodes 12 and the first substrate 11, the coating of the light-emitting diode chip is realized, and the elastic material is used as the stress release layer in the bending process of the flexible screen body, which can Prevent damage to brittle LED chips.
需要说明的是，弹性材料13对发光二极管芯片进行包覆时，电子层122、发光层123和空穴层124都被包覆，而电极121未被包覆。It should be noted that when the elastic material 13 covers the light emitting diode chip, the electron layer 122 , the light emitting layer 123 and the hole layer 124 are all covered, while the electrode 121 is not covered.
在本实施例中，所述电子层122为n型GaN层，所述空穴层124为p型GaN层；或所述电子层122为p型GaN层，所述空穴层124为n型GaN层。In this embodiment, the electron layer 122 is an n-type GaN layer, and the hole layer 124 is a p-type GaN layer; or the electron layer 122 is a p-type GaN layer, and the hole layer 124 is an n-type layer. GaN layer.
请再参考图1所示，在本实施例中，所述发光二极管阵列结构还包括用于与所述第一基板11进行贴合的第二基板，所述第二基板包括光转换层。图中的14为第二基板与所述第一基板11进行贴合之后，形成的不同颜色(例如R、G、B)的光转换层。Please refer to FIG. 1 again. In this embodiment, the light emitting diode array structure further includes a second substrate for bonding with the first substrate 11 , and the second substrate includes a light conversion layer. 14 in the figure is the light conversion layer of different colors (such as R, G, B) formed after the second substrate and the first substrate 11 are bonded together.
本实用新型实施例提供的发光二极管阵列结构，通过在发光二极管之间、以及发光二极管与基板之间填充弹性材料，实现对发光二极管芯片的包覆，以弹性材料作为柔性屏体弯折过程的应力释放层，可防止脆性的发光二极管芯片损伤。The light-emitting diode array structure provided by the embodiment of the utility model realizes the covering of the light-emitting diode chip by filling elastic materials between the light-emitting diodes and between the light-emitting diodes and the substrate, and uses the elastic material as the key point of the flexible screen body bending process. The stress release layer can prevent the brittle LED chip from being damaged.
第二实施例second embodiment
本实用新型第二实施例提供一种显示装置，所述显示装置包括第一实施例所述的发光二极管阵列。发光二极管阵列在此不作赘述。The second embodiment of the present invention provides a display device, the display device includes the light emitting diode array described in the first embodiment. The light emitting diode array will not be described in detail here.
本实用新型实施例提供的显示装置，通过在发光二极管之间、以及发光二极管与基板之间填充弹性材料，实现对发光二极管芯片的包覆，以弹性材料作为柔性屏体弯折过程的应力释放层，可防止脆性的发光二极管芯片损伤。In the display device provided by the embodiment of the present invention, by filling the elastic material between the light emitting diodes and between the light emitting diode and the substrate, the coating of the light emitting diode chip is realized, and the elastic material is used as the stress release in the bending process of the flexible screen body layer, which prevents damage to brittle LED chips.
依照本实用新型的实施例如上文所述，这些实施例并没有详尽叙述所有的细节，也不限制该实用新型仅为所述的具体实施例。显然，根据以上描述，可作很多的修改和变化。本说明书选取并具体描述这些实施例，是为了更好地解释本实用新型的原理和实际应用，从而使所属技术领域技术人员能很好地利用本实用新型以及在本实用新型基础上的修改使用。本实用新型仅受权利要求书及其全部范围和等效物的限制。Embodiments according to the present invention are as described above, and these embodiments do not exhaustively describe all details, nor limit the utility model to only the specific embodiments described. Obviously many modifications and variations are possible in light of the above description. This description selects and specifically describes these embodiments in order to better explain the principle and practical application of the utility model, so that those skilled in the art can make good use of the utility model and the modification and use on the basis of the utility model . The invention is to be limited only by the claims and their full scope and equivalents.
Claims (8)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721272702.0U CN207529934U (en) | 2017-09-28 | 2017-09-28 | A kind of LED array structure and display device |
| PCT/CN2018/087334 WO2019062155A1 (en) | 2017-09-28 | 2018-05-17 | Light-emitting diode array structure and display apparatus |
| TW107207196U TWM565881U (en) | 2017-09-28 | 2018-05-31 | Light emitting diode array structure and display device |
| US16/540,469 US20190371771A1 (en) | 2017-09-28 | 2019-08-14 | Light emitting diode array structure and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721272702.0U CN207529934U (en) | 2017-09-28 | 2017-09-28 | A kind of LED array structure and display device |
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| CN207529934U true CN207529934U (en) | 2018-06-22 |
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| CN201721272702.0U Active CN207529934U (en) | 2017-09-28 | 2017-09-28 | A kind of LED array structure and display device |
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| US (1) | US20190371771A1 (en) |
| CN (1) | CN207529934U (en) |
| TW (1) | TWM565881U (en) |
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| TWI706397B (en) * | 2018-10-12 | 2020-10-01 | 友達光電股份有限公司 | Display device and method for forming the same |
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| CN111682094B (en) * | 2020-05-28 | 2022-04-01 | 重庆康佳光电技术研究院有限公司 | LED light-emitting back plate and production method thereof |
| CN114335059A (en) * | 2021-12-24 | 2022-04-12 | 季华实验室 | Anti-warping microdisplay panel, microdisplay device and manufacturing method thereof |
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| CN102456775B (en) * | 2010-10-14 | 2015-05-20 | 晶元光电股份有限公司 | Light emitting element and its manufacturing method |
| EP2980871B1 (en) * | 2013-03-28 | 2018-02-14 | Toshiba Hokuto Electronics Corporation | Light-emitting device and production method therefor |
| CN103400850B (en) * | 2013-08-14 | 2016-01-20 | 中国科学院长春光学精密机械与物理研究所 | For flexible led array device and the manufacture method of micro-display and illumination |
| TW201517328A (en) * | 2013-10-25 | 2015-05-01 | Wintek Corp | Light-emitting diode structure |
| KR102385327B1 (en) * | 2015-04-06 | 2022-04-12 | 삼성디스플레이 주식회사 | Flexible display device and method of manufacturing the same |
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2017
- 2017-09-28 CN CN201721272702.0U patent/CN207529934U/en active Active
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2018
- 2018-05-17 WO PCT/CN2018/087334 patent/WO2019062155A1/en active Application Filing
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| TWI706397B (en) * | 2018-10-12 | 2020-10-01 | 友達光電股份有限公司 | Display device and method for forming the same |
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| US20190371771A1 (en) | 2019-12-05 |
| WO2019062155A1 (en) | 2019-04-04 |
| TWM565881U (en) | 2018-08-21 |
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