CN207381369U - Substrate board treatment - Google Patents
Substrate board treatment Download PDFInfo
- Publication number
- CN207381369U CN207381369U CN201721008841.2U CN201721008841U CN207381369U CN 207381369 U CN207381369 U CN 207381369U CN 201721008841 U CN201721008841 U CN 201721008841U CN 207381369 U CN207381369 U CN 207381369U
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- China
- Prior art keywords
- substrate
- mouth
- chamber
- board treatment
- electro
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- 239000000758 substrate Substances 0.000 title claims abstract description 114
- 238000011282 treatment Methods 0.000 title claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 238000002347 injection Methods 0.000 claims abstract description 10
- 239000007924 injection Substances 0.000 claims abstract description 10
- 239000007921 spray Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 description 27
- 238000007669 thermal treatment Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006902 nitrogenation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Even the utility model, which is large-scale substrate, also can fully inhibit its charged substrate board treatment.Substrate board treatment (100) possesses：Mounting portion (42), for mounting substrate (5)；Chamber (41) will cover around the substrate (5) being positioned in heating plate (42), and be formed with to move into substrate (5) moves into mouth (7)；Conveying robot (3) has the hand (33) of supporting substrate (5), and the substrate (5) supported by hand (33) is moved into via mouth (7) is moved into chamber (41)；And electro-dissociator (6), the gas ionized to the direction injection from outside towards the chamber (41) for moving into mouth (7).
Description
Technical field
The utility model is related to substrate board treatment, more particularly to possessing to liquid crystal display device glass substrate etc.
The substrate board treatment of the electro-dissociator for the gas (hereinafter referred to as ionized gas) that substrate injection has been ionized.
Background technology
As the substrate board treatment for possessing electro-dissociator, it is known that the substrate board treatment that patent document 1 to 3 is recorded.Ionization
Device sprays ionized gas to the substrate that the insulator as glass is formed, and the charged of substrate is neutralized, and inhibits electrostatic
Generation.In such as paragraph 0015, Fig. 1 in patent document 1 (Japanese Unexamined Patent Publication 8-97121 publications), describe with
The heating unit of heating plate sprays the substrate board treatment of ionized gas to substrate.In (the Japanese Unexamined Patent Publication 9- of patent document 2
No. 213597 publications) such as paragraph 0019, in Fig. 1, describe and spray ion to substrate in the cooling unit with coldplate
Change the substrate board treatment of gas.Such as paragraph 0007, Fig. 2 in patent document 3 (Japanese Unexamined Patent Publication 2001-7019 publications)
In, it describes from electro-dissociator at the substrate of the moving area injection ionized gas of the conveying robot for carrying substrate
Manage device.
In recent years, it is more than the substrate of 2m for one side there is also the rectangular-shaped glass substrate for liquid crystal display device etc..
Moreover, there are the tendencies that substrate further maximizes.For this large substrate, though as patent document 1 and 2 it is recorded that
Sample sprays ionized gas in substrate board treatment, can also lead to the problem of that can not fully to inhibit substrate charged.In addition, i.e.
Make as recorded in patent document 3, spray ionized gas to the substrate carried in way, can also generate fully to inhibit
The problem of substrate is charged.
Utility model content
The purpose of this utility model is that in view of above-mentioned aspect, also can fully inhibit even providing the substrate of large size
Its charged substrate board treatment.
One mode of the substrate board treatment of the utility model, possesses：Mounting portion, for loading substrate；Chamber will carry
It puts and is covered around the substrate in mounting portion, and be formed with to move into substrate moves into mouth；Conveying robot has
The hand of supporting substrate will be moved into via mouth is moved into chamber by the substrate of hand support；And electro-dissociator, to from moving into
The gas that the outside of mouth is ionized towards the indoor direction injection of chamber.
The another way of the utility model, in aforesaid substrate processing unit, electro-dissociator to the substrate by hand support with
And the gas then ionized by the substrate sustained firing of mounting portion mounting.
The another way of the utility model in aforesaid substrate processing unit, moves into mouth and also doubles as being incited somebody to action by conveying robot
Substrate takes out of the mouth that takes out of to outside chamber, and electro-dissociator from mounting portion when taking out of the substrate, also to the substrate by hand support
Spray the gas of ionization.
The another way of the utility model, in aforesaid substrate processing unit, mounting portion have to the substrate that is loaded into
The heating plate of row heating.
The another way of the utility model, in aforesaid substrate processing unit, mounting portion have to the substrate that is loaded into
The coldplate of row cooling.
According to the structure of any of the above-described mode, even large-scale substrate, it is charged also can fully to inhibit its.
Description of the drawings
Fig. 1 is the approximate vertical view of the substrate board treatment for the embodiment for being denoted as the utility model.
Fig. 2A, Fig. 2 B, Fig. 2 C are the summary side elevations for the action for representing embodiment.
Wherein, the reference numerals are as follows：
3 conveying robots
4 thermal treatment units
5 substrates
6 electro-dissociators
7 move into mouth
33 hands
41 chambers
42 heating plates
43 fixed pins
100 substrate board treatments
Specific embodiment
In the following, the embodiment of the utility model is illustrated referring to the drawings.Fig. 1 is to be denoted as the utility model
An embodiment substrate board treatment 100 approximate vertical view.Fig. 2A, Fig. 2 B, Fig. 2 C are the actions for representing embodiment
Summary side elevation.The substrate board treatment 100 possesses conveying robot 3 and thermal treatment unit 4.Upstream side unit 2 is to perform
The unit for handling (pretreatment procedure) more more forwardly of than the processing in thermal treatment unit 4.Pretreatment procedure is, for example, coating process
Process, transmission device transportation process etc..It should be noted that in Fig. 1 etc., X-Y plane represents horizontal plane, and Z-direction represents
Vertical.
The substrate 5 received from upstream side unit 2 is carried to thermal treatment unit 4 by conveying robot 3.Substrate 5 is, for example, square
The liquid crystal display device glass substrate of shape.In addition, substrate 5 or organic EL (Electro-Luminescence,
Electroluminescent) display device glass substrate, display panel substrate used for solar batteries, PDP (Plasma Display Panel, etc.
Gas ions display) use glass substrate or use in semiconductor manufacturing apparatus mask substrate etc..The length dimension example on one side of substrate 5
Such as it is more than 2m.
Conveying robot 3 possesses manipulator body 31, arm 32 and hand 33.Hand 33 is with flat-hand position supporting substrate 5.
Hand 33 is divided into forked (comb teeth-shaped) of four for its front end.As shown in Figure 2 A, hand 33 has and is abutted with the back side of substrate 5
Multiple support portions 34.
Arm 32 is configured to stretch, circle round and lift.The substrate 5 supported by hand 33 is existed by the action of arm 32
It moves in horizontal plane, and is lifted in vertical.
Thermal treatment unit 4 is the heating processing unit for example heated to substrate 5.Thermal treatment unit 4 possesses chamber
41st, heating plate 42, fixed pin (proximity pin) 43 and lift-pin mechanism (not shown).Chamber 41 is to be formed in the interior thereof
There is the substantially box shape of heat treatment space.The side of the chamber 41 opposite with conveying robot 31 forms opening.It is formed in the chamber
The opening of room 41 mouth 7 and takes out of mouth as moving into for substrate 5.
Heating plate 42 is equipped in the inner bottom surface of chamber 41.Heating plate 42 is plate, and the size of its upper surface is set to compare
The size of substrate 5 is larger.In the heat sources such as having heaters (not shown) built in heating plate 42.In the upper surface of heating plate 52 point
It has been casually arranged with multiple fixed pins 43.Thermal treatment unit 4 heats the substrate 5 supported by multiple fixed pins 43 by heating plate 42.
Heating plate 42 and multiple fixed pins 43 etc. are equivalent to the mounting portion of the utility model.It should be noted that it or is not provided with
Fixed pin 43 and substrate 5 is directly positioned in the structure of the upper surface of heating plate 342.
Lift-pin mechanism (not shown) makes the front end of the multiple lift pins of insertion heating plate 42 compared with the upper of heating plate 42
It retreats in vertical direction on surface.Substrate 5 is handover to by heating plate 42 from conveying robot 31 by the lift-pin mechanism.
Electro-dissociator 6 is installed via bracket along the upper opening edge for moving into mouth 7 of chamber 41.Electro-dissociator 6 spray by
The gas (hereinafter referred to as ionized gas) of ionization.Electro-dissociator 6 is, for example, pulse DC (Direct Current, direct current)
Type applies DC voltage with predetermined time interval to a pair of positive/negative emitter, make each emitter generate respectively it is positive/negative from
Son, also, the gas injection around each emitter spray the gas of ionization to defined direction.
Under pressurised conditions nitrogen or moisture-free, the air (purification air) of impurity are supplied to electro-dissociator 6.When so
Nitrogen or purification air from the ejiction opening of electro-dissociator 6 spray when, ionize when being arranged on the electric discharge of electrode of electro-dissociator 6.
As shown in arrow in Fig. 2A etc., the injection direction that electro-dissociator 6 is configured to ionized gas is removing from chamber 41
Entrance 7 is towards the direction diagonally downward in chamber 41.In addition, electro-dissociator 6 is to the entire width side of substrate 5 along the X direction
Injection ionized gas upwards.
Then, mainly the action of aforesaid substrate processing unit 100 is illustrated using Fig. 2A to Fig. 2 C.Fig. 2A is represented
Conveying robot 3 from upstream side unit 2 receive substrate 5 after state by hand 33 towards 4 side of thermal treatment unit.Hand 33 exists
Supporting substrate 5 on multiple support portions 34, and with chamber 41 to move into mouth 7 opposite.At this point, electro-dissociator 6 is to from moving into 7 direction of mouth
The injection of direction diagonally downward ionized gas in chamber 41.
Fig. 2 B represent hand 33 via the state moved into the entrance chamber 41 of mouth 7.At this point, electro-dissociator 6 is to by removing
Substrate 5 on the hand 33 of entrance 7 sprays ionized gas.The charged of the substrate 5 of ionized gas is injected with to obtain
With so as to inhibit to generate electrostatic on substrate 5.
Fig. 2 C represent the multiple fixed pins 43 being handover to substrate 5 from hand 33 via lift-pin mechanism in heating plate 42
On state.So, in a state that substrate 5 is supported on multiple fixed pins 43, is carried out to substrate 5 stipulated time
Heat.During this period, electro-dissociator 6 sprays ionized gas to the substrate 5 being supported on fixed pin 43.It is injected with
The charged of substrate 5 of ionized gas is neutralized, so as to inhibit to generate electrostatic on substrate 5.
As described above, from shown in Fig. 2 B at the time of moving into action until the heating shown in Fig. 2 C at the time of until,
Continue to spray ionized gas to substrate 5.In other words, electro-dissociator 6 is to the substrate 5 supported by hand 33 and subsequent by making
The 5 sustained firing ionized gas of substrate loaded for the heating plate 42 of mounting portion.As a result, even if being large-scale substrate 5,
Also it is charged that its can fully be inhibited.
After the defined time, the substrate 5 for completing to heat is handover to by hand 33 by lift-pin mechanism, is passed through
It is taken out of by moving into mouth 7 (taking out of mouth) to outside chamber 41.At this point, electro-dissociator 6 is to the base passed through on the hand 33 for moving into mouth 7
Plate 5 sprays ionized gas.So, ionized gas also is sprayed to substrate 5 when taking out of, so as to further inhibit substrate 5
Upper generation electrostatic.
In the above-described embodiment, move into mouth 7 also to double as taking out of mouth, but can also will take out of mouth and separately be set with moving into mouth
It puts.
Alternatively, it is also possible to be equipped with the heat treatment list for configuring coldplate to replace heating plate 42 to be cooled down to substrate 5
Member.That is, in Fig. 2A to Fig. 2 C, the structure represented by symbol 42 can be any one in heating plate, coldplate.Further
The utility model can also be applied to the buffer cell for making substrate 5 temporarily standby in chamber 41 by ground.
Or the structure for configuring above-mentioned thermal treatment unit, buffer cell etc. in vertical multistage.
Claims (5)
1. a kind of substrate board treatment, which is characterized in that
Possess：
Mounting portion, for loading substrate；
Chamber is covered being positioned in around the substrate in the mounting portion, and is formed with to move into the substrate
Move into mouth；
Conveying robot has the hand for supporting the substrate, will be moved by the substrate of the hand support via described
Mouth is moved into the chamber；And
Electro-dissociator, to from the outside for moving into mouth towards the gas of the indoor direction injection ionization of the chamber.
2. substrate board treatment as described in claim 1, which is characterized in that
The substrate that the electro-dissociator is loaded to the substrate by the hand support and then by the mounting portion is held
The gas of the continuous injection ionization.
3. substrate board treatment as claimed in claim 2, which is characterized in that
The mouth of moving into also doubles as being taken out of the substrate by the conveying robot taking out of mouth to outside the chamber,
The electro-dissociator also sprays institute when taking out of the substrate from the mounting portion to by the substrate of the hand support
State the gas of ionization.
4. substrate board treatment according to any one of claims 1 to 3, which is characterized in that
The mounting portion has the heating plate heated to the substrate loaded.
5. substrate board treatment as claimed in claim 1 or 2, which is characterized in that
The mounting portion has the coldplate cooled down to the substrate loaded.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016160441A JP6808395B2 (en) | 2016-08-18 | 2016-08-18 | Board processing equipment |
| JP2016-160441 | 2016-08-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207381369U true CN207381369U (en) | 2018-05-18 |
Family
ID=61248604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721008841.2U Active CN207381369U (en) | 2016-08-18 | 2017-08-11 | Substrate board treatment |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6808395B2 (en) |
| CN (1) | CN207381369U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6953375B2 (en) * | 2018-09-25 | 2021-10-27 | ミズノ テクニクス株式会社 | Manufacturing method of tubular body |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3442253B2 (en) * | 1997-03-13 | 2003-09-02 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP3854757B2 (en) * | 1999-08-20 | 2006-12-06 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP5810929B2 (en) * | 2012-01-13 | 2015-11-11 | シンフォニアテクノロジー株式会社 | Wafer transfer device |
-
2016
- 2016-08-18 JP JP2016160441A patent/JP6808395B2/en active Active
-
2017
- 2017-08-11 CN CN201721008841.2U patent/CN207381369U/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6808395B2 (en) | 2021-01-06 |
| JP2018029130A (en) | 2018-02-22 |
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|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |