CN207347653U - Apparatus for measuring properties of layers of material deposited on large area substrates - Google Patents

Abstract

An apparatus for measuring a property of a layer of material deposited on a large area substrate is described. The apparatus comprises: a controller; a substrate transport arrangement that communicates with the controller to determine a position and/or velocity of the substrate; an array of at least three sources configured to deposit a first layer of material on a surface of the substrate, wherein the array of at least three sources communicates with the controller, wherein the controller is configured to control the deposition of the first layer of material; and a measurement unit that is configured to communicate with the controller to allow measurement of a property of the first layer of material above the substrate as the substrate is moved along the measurement unit by the substrate transport arrangement, wherein the controller is configured to correlate the measurement of the property of the first layer of material with a signal indicative of the position and/or velocity of the substrate along the substrate transport arrangement.

Description

Apparatus for measuring properties of layers of material deposited on large area substrates

technical field

Embodiments of the present disclosure relate to processing systems and methods for their operation. In particular, embodiments relate to apparatus for handling and monitoring large area substrates (eg, by optical means). In particular, the present disclosure relates to apparatus for measuring properties of layers of material deposited on large area substrates in a deposition system.

Background technique

In many technical applications, layers of different materials are deposited onto each other over a substrate. Typically this is done in a series of coating or deposition steps (eg sputtering steps). For example, a multilayer stack having the sequence "Material One" - "Material Two" - "Material One" may be deposited. For depositing a multilayer stack, an in-line arrangement of a plurality of deposition modules can be used. A typical inline system includes a number of subsequent processing modules, where multiple processing steps are performed in successive chambers, such that in-line systems can be utilized in successive, quasi-continuously, Or statically process multiple substrates step by step. By varying process parameters (such as process power or other process parameters), different physical properties (eg, different optical refractive properties) of the coating can be obtained.

For processing large area substrates, process monitoring and quality inspection are beneficial to ensure high and reproducible quality of processed large area substrates. For example, coatings on large area substrates can be quality inspected to determine the optical properties of coated substrates at low cost of ownership. Typically, large-area substrates are processed in a vertical arrangement for reasons of economy and space saving.

For static deposition systems using arrays of deposition sources, layer uniformity improvement is a further task to be considered. In a static large area deposition process (eg, by PVD), an array of deposition sources operating in parallel is typically used. An example of such a deposition system is Applied Materials' PVD deposition tools, the The PVD deposition tool uses an array of 12 vertically aligned rotating cathodes to uniformly coat Gen 8.5 (Generation 8.5) substrates measuring 2.2 x 2.5 square meters. Layer deposition is done for example by magnetron sputtering, with a magnetic yoke mounted inside each of the 12 targets. The magnetron helps to generate a plasma racetrack on the rotating target to locally enhance the erosion of the target. Due to tolerances in magnet mass, yoke fabrication, and assembly of yoke, target, and anode, identical sputtering power and deposition time will not necessarily give identical corrosion rates. This can lead to differences in deposition rates at the front of different targets within the array, which can cause non-uniformity in the horizontal profile of layer properties like layer thickness, sheet resistance or optical properties.

A typical measure to improve layer uniformity is, for example, by imposing tighter requirements on the tolerances of the magnets used in the yoke assembly, or by using shunt plates installed at appropriate locations on the yoke to tune the magnets individually. Yoke properties to minimize tolerances on yoke mass. As experienced in the past, there are economic constraints on such measures in view of the higher cost of using preselected magnets with very tight tolerances and the higher effort required for individual magnet tuning.

Accordingly, there remains a need for improved substrate processing systems that can be used to achieve increased accuracy of quality inspection on large area substrates.

Utility model content

In view of the foregoing, the present disclosure provides an apparatus for measuring properties of a layer of material deposited on a large area substrate in a deposition system comprising an array of at least three sources and a substrate transport arrangement.

According to one embodiment, an apparatus for measuring properties of a layer of material deposited on a large area substrate is provided. The apparatus comprises: a controller; a substrate transport arrangement in communication with the controller to determine the position and/or velocity of the substrate; an array of at least three sources, the array of at least three sources configured to deposit a layer of a first material on a surface of the substrate, wherein the array of at least three sources is in communication with the controller, wherein the controller is configured to control the first material layer deposition; and a measurement unit configured to communicate with the controller to allow measurement of the substrate above the substrate as the substrate is moved along the measurement unit by the substrate transport arrangement. A measurement of a property of the first layer of material; wherein the controller is configured for coordinating the measurement of the property of the first material layer with an indication of the position and/or velocity of the substrate along the substrate transport arrangement signal related.

According to yet another embodiment, an apparatus for measuring properties of a layer of material deposited on a large area substrate is provided. The apparatus comprises: a controller; a substrate transport arrangement in communication with the controller to determine the position and/or velocity of the substrate, wherein the substrate transport arrangement is configured for substantially vertical substrate transport; an array of at least three sources configured to deposit a first layer of material on a surface of the substrate, wherein the array of at least three sources is associated with the control device communication, wherein the controller is configured to control deposition of the first material layer in a static deposition process, wherein the array of at least three sources includes three or more rotating cathodes, and wherein the The three or more rotating cathodes include a magnet assembly mounted inside each of the rotating cathodes; a measurement unit configured to communicate with the controller so that when the substrate allowing measurement of a property of the first layer of material when moved along the measurement unit by the substrate transport arrangement; and an origin trigger element for detecting a measurement of the surface of the substrate wherein the controller is configured to correlate the measurement of the property of the first layer of material with a signal indicative of the position and/or velocity of the substrate along the substrate transport arrangement.

Further aspects, advantages and features of the present disclosure are apparent from the dependent claims, the description and the attached drawings.

Description of drawings

Therefore, so that the manner in which the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, is made by referring to the embodiments. The accompanying drawings relate to embodiments of the disclosure and are described below: Exemplary embodiments are depicted in the drawings and described in detail in the following description. In the attached picture:

1 shows a schematic diagram of a substrate processing system with an apparatus for measuring properties of a layer of material deposited on a large area substrate according to embodiments described herein;

Figure 2A shows a graph including time-correlated measurement signals;

Figure 2B shows the resulting differential measurement signal (e.g., a position-dependent profile) according to embodiments described herein;

Figure 3 shows a schematic diagram of another substrate processing system with means for measuring properties of a material layer;

Figure 4A shows a graph including time-correlated measurement signals;

FIG. 4B shows the resulting differential measurement signal (e.g., a position-dependent profile) according to embodiments described herein;

5 shows a flowchart illustrating a method for measuring properties of a layer of material deposited on a large area substrate according to embodiments described herein, in order to better understand the method for measuring the properties of a layer of material deposited on a substrate as described herein. Embodiments of means of properties of material layers on large area substrates;

6 shows a flowchart illustrating a method for measuring properties of a material layer deposited on a large-area substrate according to another embodiment described herein, in order to better understand the method for measuring Embodiments of the device for properties of material layers deposited on large area substrates;

Figure 7 shows a schematic perspective view of an apparatus for processing large area substrates according to embodiments described herein;

Figure 8 shows a schematic cross-sectional view of an embodiment of an optical measurement device for use in an embodiment of an apparatus for processing large area substrates according to embodiments described herein;

9 shows a schematic cross-sectional view of an optical measurement device according to the embodiment of FIG. shift;

FIG. 10 shows a schematic cross-sectional view of an optical measuring device according to the embodiment of FIG. 8 , wherein the orientation of the substrate is tilted relative to the orientation of the substrate as shown in FIG. 8 ;

Figure 11 shows a schematic cross-sectional view of an embodiment of an optical measurement device for use in an embodiment of an apparatus for processing large area substrates according to embodiments described herein; and

Figure 12 shows a schematic cross-sectional view of an embodiment of a measurement arrangement comprising an optical trap and an optical measurement device for use in an embodiment of an apparatus for processing large area substrates according to embodiments described herein.

Detailed ways

Reference will now be made in detail to the various embodiments, one or more examples of which are set forth in each drawing. Each example is provided by way of explanation and not intended as a limitation. For example, features illustrated or described as part of one embodiment can be used on other embodiments or in conjunction with any other embodiment to yield a still further embodiment. The present disclosure is intended to cover such modifications and variations.

In the following description of the drawings, the same reference numerals designate the same or similar components. In general, only differences for individual implementations are described. Unless otherwise specified, a description of a part or aspect in one embodiment is also applicable to a corresponding part or aspect in another embodiment.

The term "substrate" as used herein shall encompass substrates typically used in display manufacture, such as glass or plastic substrates. For example, a substrate as described herein will encompass substrates typically used for LCDs (Liquid Crystal Displays), PDPs (Plasma Display Panels), and the like. Unless expressly indicated otherwise in the specification, the term "substrate" is to be understood as a "large area substrate" as specified herein. According to the present disclosure, a large area substrate may have a size of at least 0.174 square meters. Typically, the size may be from about 1.4 square meters to about 8 square meters, more typically from about 2 square meters to about 9 square meters, or even up to 12 square meters.

According to one embodiment, an apparatus for measuring properties of a layer of material deposited on a large area substrate is provided. The apparatus comprises: a controller; a substrate transport arrangement in communication with the controller to determine the position and/or velocity of the substrate; an array of at least three sources, the array of at least three sources configured to deposit a layer of a first material on a surface of the substrate, wherein the array of at least three sources is in communication with the controller, wherein the controller is configured to control the first material layer deposition; and a measurement unit configured to communicate with the controller to allow measurement of the substrate above the substrate as the substrate is moved along the measurement unit by the substrate transport arrangement. A measurement of a property of the first layer of material; wherein the controller is configured for coordinating the measurement of the property of the first material layer with a measurement indicative of the position and/or velocity of the substrate along the substrate transport arrangement Signal related.

Closed-loop deposition control may be provided particularly for static array deposition processes with arrays of deposition sources (eg, with three or more deposition sources). According to some embodiments, which may be combined with other embodiments described herein, a controller is provided that analyzes time-correlated dynamic in-situ measurements in order to control the array of sources and/or locally modify the performance of an array of deposition sources. One or more layer properties of a static deposition process. According to various embodiments, the process may be a PVD process, but a static CVD process or other static process using an array of deposition sources or an array of processing tools may also be provided.

FIG. 1 illustrates a substrate processing system, such as a substrate processing system for deposition of material on a substrate 120 . A source 232 (eg, a material deposition source) is disposed within the chamber 102 . For example, chamber 102 may be a vacuum deposition chamber. A substrate transport arrangement 115 is provided in the processing system. The substrate transport arrangement 150 is configured for transporting the substrate 120 into and out of the chamber 102 .

According to some embodiments described herein, a substrate processing system or a substrate deposition system is configured for a static deposition process. For example, the substrate is substantially static in front of source array 232, such as deposition sources for deposition of material layers on the substrate. According to embodiments described herein, apparatus and systems provide material deposition, eg, sputter deposition for static deposition processes. Typically, especially for large area substrate processing, such as the processing of vertically oriented large area substrates, a distinction can be made between static deposition and dynamic deposition. Due to the fact that the level of uniformity distribution is mainly provided by the stability of the deposition process over time and the stability of the substrate transport speed over time, dynamic sputtering (i.e., in which the substrate is continuously or quasi-continuously moved adjacent to the deposition source An inline process would be easier. However, dynamic deposition may have other disadvantages (eg, particle generation). This may be particularly applicable for TFT backplane deposition. According to embodiments described herein, static sputtering, for example for TFT processing, can be provided where, unexpectedly, monitoring and closed loop control can be provided. It should be noted that the term "static deposition process" as distinct from a dynamic deposition process does not exclude any movement of the substrate as will be understood by a person skilled in the art. A static deposition process may include, for example: a static substrate position during deposition; an oscillating substrate position during deposition; a substantially constant average substrate position during deposition; Dithering substrate position during deposition; wobbling substrate position during deposition, deposition process with source array or cathode array in one chamber, i.e. a predetermined A set of cathodes; a substrate location where the deposition chamber has an atmosphere that is sealed from adjacent chambers during deposition of the layer (eg, by closing a valve separating the chamber from the adjacent chamber); or a combination of the above. Accordingly, a static deposition process may be understood as a deposition process with a static substrate position, a deposition process with an essentially static substrate position, or a deposition process with a partially static substrate position. As described herein, a static deposition process can be clearly distinguished from a dynamic deposition process without necessarily requiring that the substrate position of a static deposition process does not undergo any movement at all during deposition.

For the combination of a static deposition process and an array of three or more sources, a layer of material deposited on a substrate may exhibit a position-dependent profile, for example, for a substantially vertically oriented deposition line source and a substantially vertically Oriented substrate, showing a horizontal profile. This position-dependent horizontal profile provides a difference compared to dynamic in-line deposition processes where the substrate is moved by one or more deposition sources as the layer of material is deposited on the substrate. An unexpected consequence of the embodiments described herein is that closed-loop control can be provided for static deposition processes and arrays of three or more sources. Thus, a time-dependent measurement signal can be transformed into a position-related signal or a position-dependent profile and a differential measurement signal can be formed. In addition, embodiments described herein allow correction factors to be calculated individually for one or more sources in an array of three or more sources. These correction factors can be used for closed-loop control of the sources individually.

According to some embodiments described herein, which may be combined with other embodiments described herein, a source array as understood herein may comprise a single large area cathode powered, for example, by several power sources, and in this Several plasma racetracks are provided side-by-side on a single large-area cathode as an array of sources.

As shown in FIG. 1 , the substrate may be moved out of chamber 102 and into chamber 104 . The substrate is transported on the substrate transport arrangement 115 and the measurement cell measures properties of the layer of material deposited on the substrate as the substrate is moved along the measurement cell by the substrate transport arrangement 115 .

According to some embodiments, which may be combined with other embodiments described herein, the measurement unit may comprise a first measurement element 182 and/or a second measurement element 184 . For example, the first measurement element 182 may be a light source that provides light to make optical measurements of properties of the material layer. The second measurement element 184 may be a detector for detecting light emitted from the light source and transmitted through the substrate or through the substrate 120 having one or more layers of material disposed thereon. According to additional or alternative embodiments, the first measuring element 182 and/or the second measuring element 184 can also comprise a detector, so that reflected light can be measured.

Figure 1 relates to a single layer deposition system. During substrate transfer, one or more layer properties may be measured by an in-line measurement tool (eg, a measurement cell having one or more measurement elements 182/184). The measurement unit measures one or more properties of the substrate (with or without layerstack on the substrate). The measurements provide one or more time-related signals. According to embodiments described herein, the time-dependent measurement signal is related to the velocity of the substrate and/or the position of the substrate during transport of the substrate, eg transport along an in-line measurement tool. Hereby, the time-dependent measurement signal is transformed into a position-dependent profile, eg a position-dependent horizontal profile of one or more layer properties of the substrate, eg after deposition. According to embodiments described herein, assuming a constant substrate velocity along the measurement cell, a correlation between time-dependent measurement signals and position-dependent profiles may be provided. Alternatively, a time-dependent velocity signal or a time-dependent position signal from the substrate transport arrangement may also allow a correlation between the time-dependent measurement signal and the position-dependent profile.

As shown in Fig. 2A, a first time-dependent signal 51 after depositing the material layer and a second time-dependent signal 52 before depositing the material layer may be provided. Alternatively, the second time-related signal 52 , which mainly relates to properties of the substrate itself, may also be provided as a predetermined signal or a predetermined position-related profile stored in the memory of the controller. According to a further embodiment, the predetermined signal may also be provided as a predetermined position-related profile.

The first time-correlated signal and the second time-correlated signal are analyzed by providing the difference between the first time-correlated signal and the second time-correlated signal during the transport of the substrate on the substrate transport arrangement 115 and the correlation of the time-correlated measurement signal with the substrate velocity and/or position. Estimation of the time-correlated signal provides a position-correlated profile, for example, as shown in Figure 2B. A position-dependent profile may eg be a horizontal profile of the layer properties of an individual deposition process.

According to different embodiments, which may be combined with other embodiments described herein, it may be based on a time-related signal and subsequent conversion to a position-related measurement or by conversion to a position-related signal and providing a subsequent estimate of the difference between the two position-related measurement signals. Provides an estimate of the signal difference by forming.

Figure 2B shows a horizontal deposition profile for an embodiment with exemplary six sources (eg, rotatable sputter cathodes). According to some embodiments, a carrier may be used to support the substrate 120 in the deposition system. The carrier is moved on the substrate transport arrangement 115 . As exemplarily shown in FIG. 1 , the substrate transport arrangement 115 may have a plurality of rollers that support the carrier and the substrate disposed therein. Additionally, magnetic guiding elements may be provided to guide the carrier within the processing system and/or deposition system. For example, the carrier and/or substrate may be oriented substantially vertically in the processing system. It should be understood that in a processing system, a vertically oriented substrate may have some deviation from vertical (i.e., 90°) orientation in order to take advantage of a few degrees of tilt (i.e., a substrate may have ±20° or more from vertical orientation). less (eg, ±10° or less) deviation) to allow for stable transport or to reduce substrate particle contamination (if the substrate is tilted slightly downward).

According to some embodiments, a position-dependent profile, such as the horizontal profile of layer properties shown in FIG. 2B , shows a certain modulation that can be related to the position of different deposition sources within the array. Where the dependence of the layer properties on one or more process parameters (e.g. deposition parameters) is known, an appropriate algorithm can be used to estimate the differential measurement signal to calculate a correction factor, which can be individually One or more of process parameters (e.g., sputtering power; deposition time; magnet assembly operating parameters (e.g., magnet wobble angle), local gas flow, etc.) applied to each deposition source To improve the horizontal uniformity of layer properties. According to some embodiments, the controller may be configured to calculate a correction factor based on the differential measurement signal, the correction factor being applicable to the array of at least three sources such that at least one process parameter is changed.

As shown, for example, in FIGS. 5 and 6 , closed-loop control may be provided to improve the uniformity of one or more layers to be deposited, for example, on subsequent substrates. According to some embodiments, which may be combined with other embodiments described herein, some degree of tolerance in the etch rate of the target may be acceptable, wherein the impact of the etch rate tolerance on horizontal layer profile uniformity is compensated by employing closed-loop deposition control. influences.

Embodiments described herein include a correlation of time-dependent measurement signals with signals indicative of the position and/or velocity of a substrate along a substrate transport arrangement. For example, time-dependent measurement signals or time-dependent measurement signal differences are converted into position-dependent profiles. For example, FIG. 1 shows a controller 185 that may be connected to one or more measurement elements 182, 184, and to the substrate transport arrangement 115. The time-dependent measurement signal may be related to the position-dependent profile, eg based on a velocity signal or a position signal of the substrate transport arrangement. According to some embodiments, a starting point trigger element is provided such that when moving the substrate along the measurement unit, a positional offset can be provided that is substantially zero.

According to some embodiments, which may be combined with other embodiments described herein, the origin triggering element may be provided by a measurement unit measuring a marker, a carrier, or a carrier indicating the origin of the measurement and/or another element on the substrate . Additionally or alternatively, an origin triggering element may be provided by another measuring device, such as a light barrier or a camera, which measures a mark, a position on the carrier or another element of the carrier and/or substrate indicating the origin of the measurement. element.

Thus, an unexpected result for those skilled in the art is that in-situ measurement tools can also be used for static deposition processes, as opposed to dynamic deposition systems (eg, systems that deposit using a single source). This is especially true since for a static deposition process with an array of sources, each of the sources can provide a corresponding influence on the horizontal profile of the measured signal. In view of the foregoing, embodiments described herein may provide closed-loop control of in-situ measurements of static deposition processes with source arrays, for example, to individually feed back the power supplies, for example, to one or more of the sources in the source array , magnets, gas flow controllers to stabilize layer properties over time.

Figure 3 illustrates another substrate processing system according to embodiments described herein. A substrate may be locked into the system through a first load lock chamber 322 (eg, the lower load lock chamber shown in FIG. 3 ). After processing the substrate, the substrate may be locked out of the processing system by the second load lock chamber 322 (eg, the upper load lock chamber in FIG. 3 ).

According to an exemplary embodiment, which may be combined with other embodiments described herein, an apparatus for processing a large area substrate includes an inlet load lock chamber for feeding a substrate into a system and an outlet for discharging a substrate out of the system Load lock chamber. The load lock chamber may be configured for changing the internal pressure from atmospheric pressure to vacuum, for example to a pressure of 10 mbar or lower, or vice versa.

According to still further embodiments, which may be combined with other embodiments described herein, the processing system may also include a single load lock chamber through which substrates may enter and exit the system. For example, dual-rail systems can include options for efficiently inserting and removing substrates via a load lock. According to some embodiments, which can be combined with other embodiments described herein, the processing system can include at least one load lock chamber.

According to embodiments described herein, the chamber arrangement may include at least one vacuum chamber, eg chambers 312 , 314 and 316 . At least one vacuum chamber may be configured for transferring or processing substrates at a pressure of 10 mbar or less. Accordingly, the entry load lock chamber may be configured to be evacuated before a vacuum valve between the entry load lock chamber and an adjacent downstream chamber is opened for further transport of the substrate into said adjacent chamber. vacuum. Accordingly, the exit load lock chamber may be configured to be evacuated before a vacuum valve between the exit load lock chamber and an adjacent upstream chamber is opened for further transfer of substrates into the exit load lock chamber.

After the substrate is transferred from the entry load lock chamber to the first chamber 312, the substrate passes through a measurement station 323 having a measurement cell. According to some embodiments, which may be combined with other embodiments described herein, the measurement unit comprises the first measurement element 182 and/or the second measurement element 184 as described above. The measurement elements may be located outside the walls of the measurement station 323 as shown in FIG. 3 , or may be provided inside the measurement station 323 . As the unprocessed substrate is transferred from the load lock chamber 322 to the first chamber 312, a time-dependent measurement signal 52 (eg, the baseline shown in FIG. 2A) may be measured.

The substrate 120 is positioned in front of the processing device 230 . As shown in FIG. 3, the processing device 230 may be a source array 232 (eg, a rotatable sputtering cathode). After the static deposition process is performed on the substrate 120 in front of the processing device 230 , the substrate is moved from the first chamber 312 to the second chamber 314 . During the transfer from the first chamber 312 to the second chamber 314 , the substrate passes through a further measuring station having, for example, the first measuring element 182 and/or the second measuring element 184 . The measurement signal 55 shown in FIG. 4A illustrates an exemplary signal measured by a measurement unit disposed between the first chamber 312 and the second chamber 314 . A further static deposition process may be provided within the second chamber 314 . After a substrate 120 is transferred from the second chamber 314 to the third chamber 316, that substrate 120 passes through another measurement station with a measurement unit. A measurement signal 54 as exemplarily shown in FIG. 4A may be obtained from a measurement unit between the second chamber 314 and the third chamber 316 . Further static deposition processes and further measurement signals may be obtained in the processing system as shown in FIG. 3 before the substrate 120 is discharged from the processing system through the exit load lock chamber 322 .

The first time-related measurement signal 54 and the second time-related measurement signal 55 may eg be estimated as described with reference to FIG. 6 . Estimation of the time-dependent measurement signals yields a position-dependent profile 62 such as is shown in FIG. 4B . According to some embodiments, the properties of the first material layer are determined at at least two locations on the substrate, typically at least a similar number of locations as the number of sources in the array. For example, the measurement can also be quasi-continuous.

Even though the exemplary embodiments described herein (eg, shown in FIG. 3 ) refer to processing device 230 being a source array, other embodiments that may additionally or alternatively be implemented may include other processing devices, such as etching devices , wherein an array of processing tools (eg, etch tools) is provided. According to some embodiments, which may be combined with other embodiments described herein, the substrate processing system may additionally or alternatively include an array of at least three sources and an array of substrate processing devices, such as PVD sources, CVD sources, etching tools, heating device etc.

For better understanding, Fig. 5 shows an example of an embodiment of a method for measuring properties of a material layer deposited on a large area substrate. For example a baseline measurement signal is measured on an uncoated substrate. An exemplary signal 52 is shown in FIG. 2A. A position-dependent profile (eg, a horizontal baseline profile of an uncoated substrate) is calculated as indicated by reference numeral 503 . As _shown in block 504, a layer _is deposited using a first process having process parameters P ₁ to P _{n ( n} >=3, eg, n=6 or 12). After the first process, the substrate is measured using an inline measurement tool (eg, a device for measuring properties of a layer of material deposited on a large area substrate) (see 506). An exemplary measurement signal 51 is shown in FIG. 2A . A position-dependent profile (eg, a horizontal profile of the first process) is calculated (see 508). In blocks 503 and 508 the calculation of the position dependent profile may be provided by a controller configured to correlate the measurement signal with a signal indicative of the position and/or velocity of the substrate along the substrate transport direction. According to some embodiments described herein, a differential measurement signal or a differential position-dependent profile, such as a differential horizontal profile of the first process, is calculated (see 505 ). _According to some embodiments, which may _be combined _with other embodiments described herein, as an unexpected result, _it may be possible to use The process parameters P ₁ to P _n calculate the correction factor (n>=3, for example, n=6 or 12). As indicated by the arrows in FIG. 5 , these correction factors may be applied to the process parameters used in block 504 .

For better understanding, FIG. 6 shows an example of an embodiment of a method for measuring properties of a material layer deposited on a large-area substrate, similar to the example shown in FIG. 5 . Unlike the baseline measurement signal, the substrate is measured after processing N (eg, the Nth deposition process). An exemplary signal 55 is shown in FIG. 4A. As indicated by reference numeral 603, a position-dependent profile (eg, a horizontal profile after the Nth process) is calculated. As shown in block 604, another layer is deposited using a further process N+1 with a source S _1,N+1 to S _n,N+1 (such as a sputtered cathode S _1,N+1 to S _n,N+1 ) process parameters S _1,N+1 to S _n,N+1 (n>=3, for example, n=6 or n=12). After a further process N+1, the substrate is measured using an inline metrology tool (see 606). An exemplary measurement signal 54 is shown in FIG. 4A . A position-dependent profile is calculated, eg a horizontal profile of the further process (see 508). In blocks 603 and 608 the calculation of the position-dependent profile may be provided by a controller configured to correlate the measurement signal with a signal indicative of the position and/or velocity of the substrate along the substrate transport direction. According to some embodiments described herein, a differential measurement signal or a differential position-dependent profile, such as a differential horizontal profile of the first process, is calculated (see 605). An exemplary differential profile 62 is shown in FIG. 4B. According to some embodiments, which may be combined with other embodiments described herein, an unexpected result may be sputtering for sources S _1,N+1 to S _n,N+1 (such as further processes) The correction factor is calculated for the process parameters P _1,N+1 to P _n,N+1 (n>=3, for example n=6 or 12) of the cathodes S 1, _N+1 to S n _,N+ 1 ). As indicated by the arrows in FIG. 6 , these correction factors may be applied to the process parameters used in block 604 .

Another problem associated with measuring properties of vertically arranged large area substrates is that large area substrates tend to warp due to the gravitational force acting on the substrate during in-line measurements. Such rolling up of the substrate can cause inaccuracies in measurements (eg, optical measurements) because the relative position of the substrate with respect to the measurement device changes depending on the location and degree of rolling up. According to embodiments described herein, roll-up may illustratively be of interest for large area substrates. The substrates for which the devices and device chambers according to some embodiments described herein are provided are large area substrates as described herein, or have the dimensions of or are used for large area substrates as described herein transport carrier. For example, a carrier having a size corresponding to a single substrate that is a large area substrate may be: Generation 4.5, which corresponds to a substrate of about 0.67 square meters (730 mm x 920 mm); Generation 5, which corresponds to about 1.4 square meters meter substrate (1.1m x 1.3m); generation 7.5, which corresponds to a substrate of approximately 4.29m² (1.95m x 2.2m); generation 8.5, which corresponds to a substrate of approximately 5.7m² (2.2m x 2.5m m); or even generation 10, which corresponds to a substrate of about 8.7 square meters (2.85 m x 3.05 m). Even larger generations (such as Gen 11 and Gen 12 and corresponding substrate areas) can be similarly implemented. However, it is also possible to support a plurality of substrates with corresponding carriers of such size.

Another exemplary apparatus 100 for processing large area substrates according to embodiments described herein is shown in FIG. 7 . The apparatus comprises a chamber arrangement 110 for processing a substrate 120, e.g. a large-area substrate located therein in a vertical arrangement, wherein the chamber arrangement 110 comprises at least one chamber for processing the vertically arranged A processing apparatus (not shown) for a substrate 120 (eg, a large area substrate) and an outlet port 112 for a vertically arranged large area substrate. Furthermore, according to embodiments described herein, the apparatus 100 for processing substrates 120 (eg, large-area substrates) includes a transport system (not shown) for transporting vertically arranged large-area substrates through the chamber arrangement 110 . ) and the measuring unit 200. Features, details and aspects described below with respect to measurement unit 200 provide an example of a measurement unit according to embodiments described herein. The measuring unit comprises at least one optical measuring device 210 . According to the embodiments described herein, the at least one optical measurement device 210 includes: an illumination device 211 for emitting diffused light onto a vertically arranged large-area substrate; and a first light detection device 212 for At least one optical property of a vertically arranged large area substrate is measured.

As exemplarily shown in FIG. 8 (FIG. 8 shows a schematic cross-sectional view of an embodiment of an optical measurement device 210 used in an embodiment of an apparatus as described herein), the illumination of at least one optical measurement device 210 The device 211 comprises an integrating sphere 213 and a light source 214 which emits light into the integrating sphere 213 . According to an embodiment, which may be combined with other embodiments described herein, the light source is configured to emit light in the range of radiation in the range of visible radiation from 380-780 nm, and/or in the range of radiation from 780 nm to 3000 nm. Infrared radiation range, and/or UV radiation range from 200nm to 380nm.

According to an embodiment, which may be combined with other embodiments described herein, the light source 214 of the lighting device 211 is arranged such that light can be emitted into the integrating sphere 213 . The light source may be arranged inside the integrating sphere 213 or may be attached to the inner wall of the integrating sphere 213 . According to an embodiment, the light source 214 may be arranged outside the integrating sphere, wherein the wall of the integrating sphere includes openings configured such that light emitted from the light source may illuminate the interior of the integrating sphere.

According to an embodiment, which can be combined with other embodiments described herein, the light source 214 can be configured as, for example, a filament bulb, a tungsten halogen bulb, an LED lamp, a high power LED lamp, or a xenon arc lamp (Xe-Arc- Lamp). The light source 214 may be configured such that the light source can be turned on and off for short periods of time, for example, the light source may be a pulsed light source. For switching purposes, the light source may be connected to a control unit (not shown).

According to an embodiment, which may be combined with other embodiments described herein, at least one optical measuring device is positioned on the side of the substrate 120 to be measured, as exemplarily shown in FIG. 8 . According to an embodiment, the integrating sphere 213 is arranged with respect to the substantially vertically arranged substrate 120 at a distance D1 with respect to the first surface 121 of the substrate, D1=30 mm, and within a tolerance of ±25 mm, in particular Say, within a tolerance of ±20mm, more specifically, within a tolerance of ±15mm. As exemplarily shown in FIG. 8 , the integrating sphere 213 can be provided with a light exit port 216 arranged at a distance D1 relative to the first surface 121 of the substrate 120, D1=30 mm, and within ± Within a tolerance of 25 mm, specifically within a tolerance of ±20 mm, more specifically within a tolerance of ±15 mm. Diffuse light emitted from the integrating sphere and through the light exit port 216 may impinge on the substrate in order to measure at least one optical property of the substrate. By illuminating the substrate with diffuse light, the light impinging on the substrate has the same intensity throughout the illuminated portion of the substrate. According to some embodiments, which may be combined with other embodiments described herein, the emitted diffuse light is characterized by the ability to emit light at multiple angles, in particular to emit light with a uniform angular distribution of intensity. For example, this can be produced by diffuse reflection in an integrating sphere, such as an Ulbricht sphere, where the material in the sphere is chosen to provide diffuse reflection.

Due to the measurement arrangement according to the embodiments described herein, the tolerance of the measurement system in terms of substrate position and substrate roll-up can be increased. For example, substrate roll-up resulting in an angular deviation of ±2° (eg, ±1°) may be within the tolerances of the measurements described herein.

As exemplarily shown in FIG. 8 , the light beam (shown as a solid line with an arrow indicating the direction of the light) has an original position P on the inner surface of the integrating sphere before the beam exits the exit port 216 . As exemplarily shown in Fig. 8, the beam may be transmitted through the substrate or may be reflected from the substrate and, in the case of reflection, enter the light exit port 216 at a certain reflection angle. According to an embodiment, which may be combined with other embodiments described herein, the first light detection means 212 is configured and arranged such that light reflected from the substrate 120 (eg, from the first surface 121 of the substrate) can be detected by the first light detection means 212 detection. In this disclosure, the angle between the beam exiting the integrating sphere 213 through the light exit port 216 and the reflected beam entering the light exit port 216 may be referred to as the beam angle β.

According to an embodiment, as exemplarily shown in FIG. 8 , the optical measuring device 210 comprises a measuring axis 217. According to an embodiment, the measurement axis 217 is substantially normal to the first surface 121 of the substrate 120 . In the present disclosure, a direction in which a light beam reflected from a substrate is detected by the first photodetection device is referred to as a detection direction of the first photodetection device, as exemplarily indicated by reference numeral 218 in FIG. 4 . According to an embodiment, the angle α between the detection direction 218 and the measurement axis 217 is in the range: in the range of 2° to 10°, in particular in the range of 2° to 8°, more specifically in the range of In the range of 2° to 4°, preferably below 4°.

According to an embodiment, which may be combined with other embodiments described herein, the integrating sphere 213 has an inner diameter of 150 mm or less, specifically 100 mm or less, more specifically 75 mm or less. According to an embodiment, when a larger integrating sphere is provided to the lighting device, the influence of the size of the light exit port 216 on the quality of illumination of the substrate may be compensated for, in particular minimized.

According to an embodiment, which may be combined with other embodiments described herein, the light exit port 216 of the integrating sphere 213 may have a diameter of: 25 mm or less, specifically 15 mm or less, more specifically 10 mm or less smaller. By increasing the outlet port diameter, a larger portion of the substrate can be illuminated to perform measurements of at least one optical property of the substrate.

According to an embodiment, which may be combined with other embodiments described herein, the first light detection means 212 is configured and arranged such that the first light detection means 212 does not detect direct light from the light source 214. For example, screening means (not shown) may be provided in the integrating sphere 213 so as to prevent the light emitted by the light source from directly irradiating the first light detecting means 212 . Such a shielding device can be realized, for example, by a shield, an aperture or a lens, which can be configured or arranged such that no direct light emitted by the light source 214 can irradiate the first light detecting device 212 .

According to an embodiment, which may be combined with other embodiments described herein, the first light detection means 212 is configured and arranged such that the first light detection means 212 does not detect light reflected from the inside of the integrating sphere. For example, the first light detection device 212 may be arranged such that only light entering through the light exit port 216 of the integrating sphere 213 (eg, due to reflection on the substrate 120 ) can be detected by the first light detection device 212 .

According to an embodiment, which may be combined with other embodiments described herein, as exemplarily shown in FIG. 7 , the measurement unit 200 may include at least three optical measurement devices 210 . The at least three optical measuring devices may be arranged at different heights of a substantially vertical line as exemplarily indicated with reference numeral 222 in FIG. 7 . The at least three optical measuring devices may also be arranged at different heights of different substantially vertical lines, for example a line parallel to the line indicated with reference numeral 222 in FIG. 7 . By providing at least three optical measurement devices, multiple measurements of the substrate can be performed simultaneously. Measurements of different measurement devices can be compared to obtain information about the uniformity of the substrate, eg, the vertical uniformity of the substrate. High accuracy measurements at selected locations of the substrate can be achieved. Thus, properties of the processed substrates can be measured and monitored to ensure a high and reproducible quality of the processed substrates.

According to an embodiment, which may be combined with other embodiments described herein, the first light detection means may comprise the capability to process visible radiation. According to an embodiment, the first light detection means may be adapted to process radiation in the extra-optical range, such as infrared, ultraviolet radiation. For example, the first light detection means may be adapted for use in optical sensors that process radiation in the range of visible radiation from 380-780 nm, and/or infrared radiation from 780 nm to 3000 nm, and/or in the range of 200 nm UV radiation range to 380 nm. For example, the first light detection means may be a photo sensor or a charged coupled device (CCD)-sensor. First light detection means may be provided for acquiring measurement data and for acquiring reference data. Furthermore, the first light detection means may comprise a signal outlet port, which may be connected to a data processing or data analysis unit (not shown in the figures).

According to an embodiment, the first light detection means may be connected to the data processing or data analysis unit via a cable or a wireless connection. A data processing or data analysis unit can be adapted to examine and analyze the signal of the first light detection means. If any substrate characteristic defined as abnormal is measured, a data processing or data analysis unit can detect this change and trigger a response, such as stopping processing of the substrate or adjusting a correction factor.

According to an embodiment, which may be combined with other embodiments described herein, the at least one optical property of the substrate measured by the first optical detection means of the at least one optical measurement means comprises reflectance from the substrate.

Referring to FIGS. 9 and 10 , the influence of the roll-up of the substrate, for example due to gravity acting on the vertically arranged substrate, is analyzed. Since roll-up can be considered as an overlap of tilting and shifting the substrate relative to the original orientation of the substrate, the effects of tilting and shifting the substrate were analyzed separately. Therefore, referring to FIG. 9 , the effect of shifting the substrate compared to the reference orientation of the substrate as shown in FIG. 8 is analyzed. Furthermore, referring to FIG. 10 , the effect of tilting the substrate compared to the reference orientation of the substrate as shown in FIG. 8 was evaluated.

9 shows a schematic cross-sectional view of an embodiment of the optical measuring device according to FIG. 8 , wherein the relative position of the substrate relative to the optical measuring device is laterally offset compared to the relative position of the substrate relative to the optical measuring device as shown in FIG. 8 . shift. In FIG. 9, the lateral deflection of the substrate 120 is indicated by ΔD. As shown in FIG. 9 , when the substrate is shifted by a distance ΔD, the original position P of the light beam detected by the first photodetection device after being reflected from the substrate 120 appears farther away from the original position P of the light beam than that shown in FIG. 8 . A light detection device 212 is advanced. As shown in FIG. 9 , the beam angle (β+Δβ) increases with increasing distance (D1+ΔD) between the light exit port 216 of the integrating sphere 213 and the substrate 120 . Therefore, the size of the light exit port 216 and the position and size of the first light detection device 212 determine the maximum distance between the substrate and the light exit port 216 at which light reflected from the substrate can be detected by the first light detection device 212. detection. Since the substrate is illuminated with diffuse light in order to measure at least one optical property of the substrate, the light impinging on the substrate has the same intensity over the entire illuminated portion of the substrate. Thus, the accuracy of measuring at least one optical property of the substrate is independent of the distance between the substrate and the measurement arrangement as described herein, in particular 30 millimeters, within a tolerance of ±25 millimeters, in particular Say, within a tolerance of ±20 mm, more specifically, within a tolerance of ±15 mm.

FIG. 10 shows a schematic cross-sectional view of an embodiment of the optical measuring device according to FIG. 8 , wherein the relative position of the substrate is inclined compared to the position of the substrate shown in FIG. 8 . In FIG. 10, the slope of the substrate 120 is indicated by δ. As shown in FIG. 10 , when the substrate is inclined by an angle δ, the original position P of the light beam detected by the first light detection device 212 after being reflected from the substrate 120 appears to be farther away from the original position P of the light beam than that shown in FIG. 8 . A light detection device 212 is advanced. In addition, as shown in FIG. 10, the beam angle (β+δ) may vary according to the inclination angle δ of the substrate. Thus, the size of the light exit port 216 and the position and size of the first light detection device 212 determine the maximum slope of the substrate at which light reflected from the substrate can be detected by the first light detection device 212 . Since the substrate is illuminated with diffuse light in order to measure at least one optical property of the substrate, the light impinging on the substrate has the same intensity in the illuminated portion of the substrate. Therefore, the accuracy of measuring at least one optical property of the substrate is independent of the slope δ of the substrate.

By providing an apparatus for processing large-area substrates according to embodiments described herein, it is possible at distances of up to 100 mm between the substrate and the measurement arrangement and at up to ±2° e.g. caused by rolling up of large-area substrates A highly accurate measurement of at least one optical property of a substrate is measured with the substrate rolled up.

According to an embodiment, which may be combined with other embodiments described herein, the at least one optical measurement device 210 further comprises a second light detection device 215 for measuring substantially vertically arranged large At least one optical property of the area substrate. As exemplarily shown in FIG. 11 , according to the embodiments described herein, the second light detection device 215 can be arranged opposite to the illuminating device 211 , especially opposite to the light outlet port 216 of the integrating sphere, arranged on the substrate 120 The other side of the lighting device 211 that is different from the lighting device 211 , especially the side that is arranged on the second surface 122 of the substrate 120 . According to an embodiment, the second photodetection means 215 are arranged with respect to the substantially vertically arranged substrate 120 at a distance D2 with respect to the second surface 122 of the substrate 120, D2=30 mm and within a tolerance of ±25 mm , specifically, within a tolerance of ±20 mm, and more specifically, within a tolerance of ±15 mm.

According to an embodiment, which may be combined with other embodiments described herein, the second light detection means may comprise the capability to process visible radiation. The second light detection means may be adapted to process radiation in additional optical ranges such as infrared, ultraviolet radiation. For example, the second light detection means may be an optical sensor adapted to process radiation in the range of visible radiation from 380-780 nm, and/or infrared radiation from 780 nm to 3000 nm, and/or in the range of 200 nm UV radiation range to 380 nm. The second light detection means can be a light sensor or a charge coupled device (CCD)-sensor. A second light detection means may be provided for obtaining measurement data as well as for obtaining reference data. The second light detection means may comprise a signal outlet port connectable to a data processing or data analysis unit (not shown on the drawing).

According to an embodiment which may be combined with other embodiments described herein, the measuring unit 200 further comprises at least one light trap (light trap) 220 configured and arranged for trapping light passing through the substrate . As exemplarily shown in FIG. 12 , the at least one light trap 220 is geometrically configured such that all incident light impinges on an absorber area 221 . For example, the light trap can be configured such that an incident light beam with intensity I0 reflects on at least five surfaces before the light reflects out of the light trap. For example, the absorbing region 221 on which light within the light trap may reflect may comprise black glass that reflects 5% of the incident light. Therefore, after five reflections, the light intensity Iout of the light that can be reflected out of the light trap can be calculated as 0.05 ⁵ ·I ₀ =3.125x10 ⁻⁷ ·I ₀ , which is practically zero.

According to an embodiment, which may be combined with other embodiments described herein, the arrangement of at least one optical trap 220, in particular the absorber region 221, is configured to absorb all incident light at all measured wavelengths, such as Wavelengths in the radiation range: 380-780 nm for the visible radiation range, and/or 780-3000 nm for the infrared radiation range, and/or 200-380 nm for the ultraviolet radiation range. According to an embodiment, at least one optical trap 220 is arranged at a distance D3 relative to the second surface 122 of the substrate 120 relative to the substantially vertically arranged substrate 120 , in particular relative to the second surface 122 of the substrate 120 , D3=30 mm, and within a tolerance of ±25 mm, specifically, within a tolerance of ±20 mm, and more specifically, within a tolerance of ±15 mm.

By providing at least one optical trap according to embodiments described herein, reflections from a substrate can be measured without distortion from parasitic reflections not coming from the substrate to be measured. Furthermore, according to an embodiment, at least one optical trap is sized such that providing a single optical trap is sufficient to substantially eliminate parasitic reflections at the height of the substrate at which measurements are performed.

While the foregoing is directed to embodiments, other and further embodiments may be devised without departing from the essential scope, and the scope is determined by the appended claims.

Claims (22)

1. An apparatus for measuring properties of a layer of material deposited on a large area substrate, said apparatus comprising: controller; a substrate transport arrangement in communication with the controller to determine the position and/or velocity of the substrate; an array of at least three sources configured to deposit a first material layer on the surface of the substrate, wherein the array of at least three sources is in communication with the controller, wherein the controller is configured to control deposition of the first material layer; and a measurement unit configured to communicate with the controller to allow measurement of the first layer of material above the substrate as the substrate is moved along the measurement unit by the substrate transport arrangement measurement of properties; Wherein the controller is configured for correlating the measurement of the property of the first layer of material with a signal indicative of the position and/or velocity of the substrate along the substrate transport arrangement. 2. The apparatus of claim 1, wherein the controller is configured to correlate measurements of the property of the first material layer with signals from the substrate transport arrangement to determine The measured position on the substrate. 3. The apparatus of claim 1, wherein the controller is configured to determine a property of the first material layer on the substrate at at least two locations on the substrate. 4. The apparatus of claim 2, wherein the controller is configured to determine a property of the first material layer on the substrate at at least two locations on the substrate. 5. The apparatus of claim 1 , wherein the controller is configured to calculate the difference between the first position-dependent profile produced by the property of the first material layer and the property produced by the second material layer The first differential measurement signal between the second position-related contours of . 6. The apparatus of claim 2, wherein the controller is configured to calculate the difference between the first position-dependent profile produced by the property of the first material layer and the property produced by the second material layer The first differential measurement signal between the second position-related contours of . 7. The apparatus of claim 3, wherein the controller is configured to calculate the difference between the first position-dependent profile produced by the property of the first material layer and the property produced by the second material layer The first differential measurement signal between the second position-related contours of . 8. The apparatus of claim 4, wherein the controller is configured to calculate the difference between the first position-dependent profile produced by the property of the first material layer and the property produced by the second material layer The first differential measurement signal between the second position-related contours of . 9. The apparatus according to any one of claims 5 to 8, wherein said second position-dependent profile of said surface of said substrate is the result of a layer of material previously deposited on said surface of said substrate. A position-dependent profile, or wherein said second position-dependent profile of said surface of said substrate is a predetermined position-dependent profile of said surface of said substrate. 10. The apparatus of claim 5, wherein the controller is further configured to calculate a correction factor based on the differential measurement signal, the correction factor being applicable to the array of at least three sources such that at least one Process parameters change. 11. The apparatus of claim 9, wherein the controller is further configured to calculate a correction factor based on the differential measurement signal, the correction factor being applicable to the array of at least three sources such that at least one Process parameters change. 12. The apparatus of any one of claims 1 to 8, further comprising an origin trigger element for detecting the origin of a measurement of the surface of the substrate. 13. The apparatus of claim 9, further comprising an origin trigger element for detecting an origin of a measurement of the surface of the substrate. 14. The apparatus of claim 10, further comprising an origin trigger element for detecting an origin of a measurement of the surface of the substrate. 15. The apparatus of claim 12, wherein the onset trigger element is selected from the group consisting of: the measurement unit configured to detect an onset; and another measurement device. 16. The apparatus of any one of claims 1 to 8, wherein the array of at least three sources is an array of at least three similar sources. 17. The apparatus of any one of claims 1 to 8, wherein the array of at least three sources is an array of at least three sputtering sources. 18. The apparatus of any one of claims 1 to 8, wherein the array of at least three sources comprises three or more rotating cathodes, and wherein the three or more rotating cathodes comprise a device A magnet assembly inside each of the three or more rotating cathodes. 19. The apparatus of claim 9, wherein said array of at least three sources comprises three or more rotating cathodes, and wherein said three or more rotating cathodes comprise a magnet assembly internal to each of the more rotating cathodes, wherein the controller is further configured to calculate a correction factor based on the differential measurement signal, the correction factor being applicable to the array of at least three sources to causing at least one process parameter to vary, the apparatus further comprising an origin trigger element for detecting the origin of a measurement of the surface of the substrate, wherein the origin trigger element is selected from the group consisting of : said measuring unit configured for detecting a starting point; and another measuring device. 20. The apparatus of any one of claims 1 to 8, wherein the controller is configured for deposition of the first material layer in a static deposition process. 21. The apparatus of claim 9, wherein the controller is configured for deposition of the first material layer in a static deposition process, wherein the controller is further configured for The signal calculates a correction factor applicable to the array of at least three sources to cause at least one process parameter to be changed, the apparatus further comprising an origin trigger element for detecting damage to the substrate An origin of measurement of the surface, wherein the origin trigger element is selected from the group consisting of: the measurement unit configured to detect an origin; and another measurement device, wherein the array of at least three sources comprises Three or more rotating cathodes, and wherein the three or more rotating cathodes include a magnet assembly disposed within each of the three or more rotating cathodes. 22. An apparatus for measuring properties of a layer of material deposited on a large area substrate, the apparatus comprising: controller; a substrate transport arrangement in communication with the controller to determine the position and/or velocity of the substrate, wherein the substrate transport arrangement is configured for substantially vertical substrate transport; an array of at least three sources configured to deposit a first material layer on the surface of the substrate, wherein the array of at least three sources is in communication with the controller, wherein The controller is configured to control deposition of the first material layer in a static deposition process, wherein the array of at least three sources includes three or more rotating cathodes, and wherein the three or the more rotating cathodes include a magnet assembly mounted inside each of the three or more rotating cathodes; a measurement unit configured to communicate with the controller to allow measurement of the property of the first material layer as the substrate is moved along the measurement unit by the substrate transport arrangement ;as well as an origin trigger element for detecting the origin of a measurement of the surface of the substrate; Wherein the controller is configured for correlating the measurement of the property of the first layer of material with a signal indicative of the position and/or velocity of the substrate along the substrate transport arrangement.