CN207265044U - Pin grid array packaging structure - Google Patents
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Abstract
Description
技术领域technical field
本实用新型涉及一种引脚网格阵列封装结构,属于半导体封装领域。The utility model relates to a pin grid array packaging structure, which belongs to the field of semiconductor packaging.
背景技术Background technique
在CUP封装领域中,由于对可执行越来越多的功能的半导体集成电路的商业需求日益增加,因此半导体集成电路芯片的大小正变得非常大且会消耗大量功率。随着大小的增大及功率要求的提高,在对半导体芯片提供互连及封装的复杂度及成本也已增加。为了减少成本及提高可靠性,先前技术的某些互连设计已提供例如上面安装有半导体芯片或管芯的陶瓷或配线板等绝缘体衬底。In the field of CUP packaging, due to the increasing commercial demand for semiconductor integrated circuits that can perform more and more functions, the size of semiconductor integrated circuit chips is becoming very large and consumes a large amount of power. As the size and power requirements have increased, the complexity and cost of providing interconnection and packaging to semiconductor chips has also increased. To reduce cost and increase reliability, some prior art interconnect designs have provided insulator substrates such as ceramics or wiring boards on which semiconductor chips or dies are mounted.
配线板上的金属导体或迹线一般用于将环绕管芯的外引线结合区域上的结合垫与多个端子引脚互连。先前技术设计中的迹线通常使用通往各种外部引脚的非常长或非常短的互连迹线而远离外引线结合区域朝封装的外侧边缘路由。在其他先前技术设计中,所述迹线再次使用通往各种外部端子引脚的或非常长或非常短的互连迹线而远离外引线结合区域朝管芯路由。因此,非常长的迹线长度与非常短的迹线长度相比在寄生电感及寄生电容方面有所增大。此外,这将会使不同迹线或信号通道之间产生电信号延时问题。Metallic conductors or traces on the wiring board are typically used to interconnect the bond pads on the outer lead bonding area surrounding the die to the multiple terminal pins. Traces in prior art designs are typically routed away from the outer lead bonding area toward the outside edge of the package using very long or very short interconnect traces to the various external pins. In other prior art designs, the traces are again routed away from the outer lead bond areas towards the die using either very long or very short interconnect traces to the various external terminal pins. Thus, very long trace lengths have an increase in parasitic inductance and parasitic capacitance compared to very short trace lengths. In addition, this will cause electrical signal delay problems between different traces or signal channels.
因此将期望提供一种与传统上可获得的引脚网格阵列封装结构相比具有更高封装密度的引脚网格阵列封装结构。此外,减小非常长的迹线的物理长度将是有利的,这使得所有迹线的长度差小于传统引脚网格阵列结构的长度差,由此等化不同通道之间的电信号延时。在本实用新型中这是通过提供具有多个导体段的衬底或配线板而实现,其中第一导体段从外引线结合区域上的结合垫向外延伸且交错的第二导体段从外引线结合区域上的结合垫向内延伸。另外,所述导体段中形成有延时线(电容加载)网络以进一步等化不同导体段之间的信号延时。It would therefore be desirable to provide a pin grid array package with a higher packing density than conventionally available pin grid array packages. In addition, it would be advantageous to reduce the physical length of very long traces so that the difference in length of all traces is smaller than that of conventional pin grid array structures, thereby equalizing the electrical signal delay between different channels . This is accomplished in the present invention by providing a substrate or wiring board with a plurality of conductor segments, with first conductor segments extending outward from bond pads on the outer lead bonding area and alternate second conductor segments extending outward from the outer Bond pads on the wire bonding area extend inwardly. In addition, a network of delay lines (capacitive loading) is formed in the conductor segments to further equalize signal delays between different conductor segments.
为了解决上述问题,美国专利申请第4887148号公开了如下内容:引脚网格阵列封装结构包括:封装本体构件;配线板,具有用于接纳半导体芯片的中心部分;胶带引线电路;以及盖构件。多个金属端子引脚实质上延伸于本体构件的整个顶表面及整个底表面之上。该文件虽然解决了前述问题,但是,上述文件存在如下问题:1、在散热方面,需要额外填充导热材料,故制造工艺较为复杂;2、由于配线板为印刷电路板(PCB),所以,其上相邻的导体段制造相对困难,更重要的,在柔性电路板上,相邻的导体段之间存在干扰的问题,除此之外,由于芯片正方,所以,需要格外采用胶带引线将芯片与配线板上的导体段电连接,所以,相对的制造工艺也相对复杂。In order to solve the above-mentioned problems, U.S. Patent Application No. 4887148 discloses the following: a pin grid array package structure includes: a package body member; a wiring board having a center portion for receiving a semiconductor chip; a tape lead circuit; and a cover member . A plurality of metal terminal pins extend over substantially the entire top surface and the entire bottom surface of the body member. Although this document solves the aforementioned problems, the above-mentioned documents have the following problems: 1. In terms of heat dissipation, additional heat-conducting materials need to be filled, so the manufacturing process is relatively complicated; 2. Since the wiring board is a printed circuit board (PCB), so, It is relatively difficult to manufacture adjacent conductor segments. More importantly, there is a problem of interference between adjacent conductor segments on the flexible circuit board. In addition, because the chip is square, it is necessary to use tape leads to connect The chip is electrically connected to the conductor segment on the wiring board, so the relative manufacturing process is relatively complicated.
实用新型内容Utility model content
本实用新型的目的在于提供一种引脚网格阵列封装结构,其节约了成本和简化了生产工艺,又减小了相邻的导体段之间存在干扰的等问题。The purpose of the utility model is to provide a pin grid array packaging structure, which saves cost and simplifies the production process, and reduces the problems of interference between adjacent conductor segments.
为达到上述目的,本实用新型提供如下技术方案:一种引脚网格阵列封装结构,包括具有相背设置的正面和背面的硅衬底、设置在所述硅衬底的正面的芯片、设置在所述硅衬底下方的封装底板、及罩设在所述封装底板上方以包围所述硅衬底、芯片的盖体;In order to achieve the above object, the utility model provides the following technical solutions: a pin grid array packaging structure, including a silicon substrate with oppositely arranged front and back sides, a chip arranged on the front side of the silicon substrate, and a a package base plate under the silicon substrate, and a cover disposed above the package base plate to surround the silicon substrate and the chip;
所述封装底板具有相背设置的上表面和下表面,所述封装底板上设置有多个金属端子引脚,所述金属端子引脚贯穿所述封装底板,且于所述封装底板的上表面上形成端子引脚端部;The package bottom plate has an upper surface and a lower surface arranged opposite to each other, and a plurality of metal terminal pins are arranged on the package bottom plate, and the metal terminal pins pass through the package bottom plate and are on the upper surface of the package bottom plate forming terminal pin ends;
所述硅衬底设置于所述封装底板的上表面,所述金属端子引脚贯穿所述硅衬底,所述硅衬底包括矩形形状的引线结合区域和芯片安装区域;所述引线结合区域被设置成与芯片安装区域成间隔地绕开的关系,所述引线结合区域形成有结合垫;所述硅衬底的上表面上形成有金属引线和与所述金属引线电气连接的导电电极,所述金属引线包括多个导体段,多个所述导体段在其端部以间隔开的金属端子垫做结,所述金属端子垫与相应的所述端子引脚端部垂直对准或对齐;多个所述导体段包括由从引线结合区上的所述结合垫向外延伸的第一导体段和从所述引线结合区域上的所述结合垫向内延伸的交错的第二导体段;The silicon substrate is arranged on the upper surface of the package bottom plate, the metal terminal pins pass through the silicon substrate, and the silicon substrate includes a rectangular wire bonding area and a chip mounting area; the wire bonding area set in a spaced relationship with the chip mounting area, the wire bonding area is formed with bonding pads; metal leads and conductive electrodes electrically connected to the metal leads are formed on the upper surface of the silicon substrate, The metal lead comprises a plurality of conductor segments junctured at their ends with spaced apart metal terminal pads vertically aligned or aligned with corresponding ends of the terminal pins a plurality of said conductor segments comprising first conductor segments extending outward from said bonding pads on a wire bonding area and interleaved second conductor segments extending inward from said bonding pads on said wire bonding area ;
所述芯片倒置在所述硅衬底上,所述芯片具有管芯,所述芯片的管芯与导电电极电气连接。The chip is inverted on the silicon substrate, the chip has a die, the die of the chip is electrically connected to the conductive electrodes.
进一步的:所述引脚网格阵列封装结构还包括网络延时装置,所述网络延时装置形成在所述金属引线中以等化不同导体段之间的信号延时。Further: the pin grid array package structure further includes a network delay device, the network delay device is formed in the metal lead to equalize the signal delay between different conductor segments.
进一步的:所述网络延时装置包括与所述导体段一体形成的多个第一向外延伸桩构件。Further: the network delay device includes a plurality of first outwardly extending pile members integrally formed with the conductor segment.
进一步的:所述网络延时装置还包括与所述导体段一体形成的多个第二向外延伸桩构件,所述第二向外延伸桩构件与所述第一向外延伸桩构件相对设置。Further: the network delay device further includes a plurality of second outwardly extending pile members integrally formed with the conductor segment, and the second outwardly extending pile members are arranged opposite to the first outwardly extending pile members .
进一步的:其特征在于,每个所述第二向外延伸桩构件、第一向外延伸桩构件上加载有电容。Further: it is characterized in that each of the second outwardly extending pile member and the first outwardly extending pile member is loaded with a capacitor.
进一步的:所述电容接地设置。Further: the capacitor is grounded.
进一步的:所述端子引脚被排列成行及列以形成相对于所述封装底板旋转45°的矩阵阵列。Further: the terminal pins are arranged in rows and columns to form a matrix array rotated by 45° relative to the package bottom plate.
进一步的:所述封装底板上设置有解耦电容器网络,该解耦电容器网络内包括多个分立的电容器。所述封装底板上形成有四个隅角区域,多个所述电容器设置在四个隅角区域内。Further: a decoupling capacitor network is provided on the packaging bottom plate, and the decoupling capacitor network includes a plurality of discrete capacitors. Four corner areas are formed on the package bottom plate, and a plurality of capacitors are arranged in the four corner areas.
进一步的:所述封装底板由所述金属端子引脚在其中成型的热塑性材料形成,所述盖体是由导热材料形成。Further: the package bottom plate is formed of a thermoplastic material in which the metal terminal pins are molded, and the cover is formed of a thermally conductive material.
本实用新型的有益效果在于:由于采用硅衬底,其散热能力优秀,所以无需再在盖体内填充导热材料,节约了成本和简化了生产工艺,且可以减小引脚网格阵列封装结构的整体体积;又该芯片可以倒置该硅衬底上,所以,芯片的安装更方便,无需额外的采用TAB胶带进行电连接;而且由于硅衬底的本身特性和制造特性,可以将导体段设置的更窄,从而进一步减小相邻导体段之间的干扰,布局也更方便。又由于可以将导体段设置的更窄,即可以进一步的有效减小阻抗。The beneficial effect of the utility model is that: since the silicon substrate is used, its heat dissipation capability is excellent, so there is no need to fill the heat-conducting material in the cover body, which saves the cost and simplifies the production process, and can reduce the cost of the pin grid array packaging structure. The overall volume; and the chip can be inverted on the silicon substrate, so the installation of the chip is more convenient, and there is no need to use additional TAB tape for electrical connection; and due to the characteristics and manufacturing characteristics of the silicon substrate, the conductor segment can be set Narrower, thereby further reducing the interference between adjacent conductor segments, and the layout is also more convenient. And because the conductor segment can be set narrower, the impedance can be further effectively reduced.
上述说明仅是本实用新型技术方案的概述,为了能够更清楚了解本实用新型的技术手段,并可依照说明书的内容予以实施,以下以本实用新型的较佳实施例并配合附图详细说明如后。The above description is only an overview of the technical solution of the utility model. In order to understand the technical means of the utility model more clearly and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiment of the utility model with accompanying drawings. back.
附图说明Description of drawings
图1是本实用新型的半导体单层网络封装结构的剖视图;Fig. 1 is the cross-sectional view of the semiconductor single-layer network encapsulation structure of the present utility model;
图2是沿线2-2截取的图1所示半导体单层网络封装结构的俯视平面图;Fig. 2 is a top plan view of the semiconductor single-layer network package structure shown in Fig. 1 taken along line 2-2;
图3是硅衬底的俯视平面图,其示出硅衬底的向外的导体段及向内的导体段;3 is a top plan view of a silicon substrate showing outwardly facing and inwardly directed conductor segments of the silicon substrate;
图4是导体段的包含网络延时装置的一部分的俯视平面图。Figure 4 is a top plan view of a portion of a conductor segment containing a network delay device.
具体实施方式Detailed ways
下面结合附图和实施例,对本实用新型的具体实施方式作进一步详细描述。以下实施例用于说明本实用新型,但不用来限制本实用新型的范围。Below in conjunction with accompanying drawing and embodiment, the specific embodiment of the utility model is described in further detail. The following examples are used to illustrate the utility model, but not to limit the scope of the utility model.
请参见图1,本实用新型一较佳实施例所示的一种引脚网格阵列(PGA)封装结构10包括具有相背设置的正面28和背面26的硅衬底14、设置在所述硅衬底14的正面28的芯片18、设置在所述硅衬底14下方的封装底板12、及罩设在所述封装底板12上以包围所述硅衬底14、芯片18的盖体22。1, a pin grid array (PGA) packaging structure 10 shown in a preferred embodiment of the present invention includes a silicon substrate 14 with a front side 28 and a back side 26 arranged oppositely, arranged on the The chip 18 on the front side 28 of the silicon substrate 14, the packaging base 12 arranged below the silicon substrate 14, and the cover 22 covering the packaging base 12 to surround the silicon substrate 14 and the chip 18 .
请参见图1和图2,所述封装底板12上设置有多个金属端子引脚24。所述封装底板12被界定成大体为菱形形状的构造,优选为由热塑性材料形成以在例如使用传统注射成型设备进行IS成型时包含多个金属端子引脚24。所述封装底板12具有相背设置的上表面(未标号)和下表面(未标号),所述金属端子引脚24贯穿所述封装底板12,且于所述封装底板12的上表面上形成端子引脚端部30。该端子引脚部30可以为突出封装底板12的突起。所述封装底板12的四个侧的尺寸依于金属端子引脚24的数目而变化,金属端子引脚24的数目可介于68个引脚至410个引脚的范围。多个金属端子引脚24以行及列的形式安置于菱形形状的封装底板12内以提供矩阵阵列。该金属端子引脚24行及列形成为相对于所述封装底板12旋转45°的矩阵阵列。Referring to FIG. 1 and FIG. 2 , a plurality of metal terminal pins 24 are disposed on the package base 12 . The package backplane 12 is defined in a generally diamond-shaped configuration, preferably formed from a thermoplastic material to contain a plurality of metal terminal pins 24 when IS molded, for example, using conventional injection molding equipment. The package base 12 has an upper surface (not labeled) and a lower surface (not labeled) opposite to each other, the metal terminal pins 24 penetrate through the package base 12 and are formed on the upper surface of the package base 12 terminal pin end 30 . The terminal pin portion 30 may be a protrusion protruding from the package substrate 12 . The dimensions of the four sides of the package base 12 vary depending on the number of metal terminal pins 24 , and the number of metal terminal pins 24 may range from 68 pins to 410 pins. A plurality of metal terminal pins 24 are arranged in rows and columns within the diamond-shaped package substrate 12 to provide a matrix array. The rows and columns of the metal terminal pins 24 are formed as a matrix array rotated by 45° relative to the package base 12 .
请参见图3并结合图1,所述硅衬底14设置于所述封装底板12的上表面,所述金属端子引脚24贯穿所述硅衬底14,所述硅衬底14包括矩形形状的引线结合区域34a和芯片安装区域(未标号)。所述引线结合区域34a即为OLB区域,所述硅衬底14的上表面除包括引线结合区域34a、芯片安装区域外,还包括围绕在引线结合区域34a外的其他区域(未标号)。所述引线结合区域34a被设置成与芯片安装区域成间隔地绕开的关系,所述引线结合区域34a形成有结合垫42a。所述硅衬底14的上表面上形成有金属引线和与所述金属引线电气连接的导电电极(未图示)。所述金属引线和导电电极通过刻蚀、淀积等传统的硅衬底14的制作工艺制作完成。所述金属引线包括多个导体段40,多个所述导体段40在其端部以间隔开的金属端子垫36做结,所述金属端子垫36与相应的所述端子引脚端部30垂直对准或对齐。所述硅衬底14上设置有多个贯穿该硅衬底14的通孔38,该通孔38自硅衬底14的上表面贯穿下表面,所述金属端子引脚24通过穿过通孔38以与对应的金属引线电连接。电连接可以采用激光焊接、超声焊接等。多个所述导体段40包括由从引线结合区域34a上的所述结合垫42a向外延伸的第一导体段40a和从所述引线结合区域34a上的所述结合垫42a向内延伸的交错的第二导体段40b,其中部分导体部延伸至芯片安装区域内以增大封装密度。在本实用新型中,由于第一导体段40a的交错部分远离OLB区域34a,因此其物理长度被制成为更短的,且先前技术的PGA封装中不同金属端子垫36a之间的非常长的及非常短的互连迹线已消除。因此,本实用新型的导体段40的物理长度之间的差异小于传统PGA封装的50%。因此,不同通道或导体之间的电信号延时已得以显著减小,但并未完全消除。此外,由于在同一方向上延伸的任意两个导体段40(即,两个段40a)之间的距离已因所述交错图案而增大,因此这些导体段40之间的串扰被最小化。Please refer to FIG. 3 and in conjunction with FIG. 1, the silicon substrate 14 is disposed on the upper surface of the package base plate 12, the metal terminal pins 24 penetrate through the silicon substrate 14, and the silicon substrate 14 has a rectangular shape. The wire bonding area 34a and the chip mounting area (not numbered). The wire bonding area 34a is the OLB area, and the upper surface of the silicon substrate 14 includes other areas (not numbered) surrounding the wire bonding area 34a in addition to the wire bonding area 34a and the chip mounting area. The wire bonding area 34a is disposed in spaced-apart relationship to the chip mounting area, the wire bonding area 34a being formed with a bond pad 42a. Metal leads and conductive electrodes (not shown) electrically connected to the metal leads are formed on the upper surface of the silicon substrate 14 . The metal leads and conductive electrodes are manufactured through conventional silicon substrate 14 manufacturing processes such as etching and deposition. The metal lead includes a plurality of conductor segments 40, the plurality of conductor segments 40 are joined at their ends with spaced apart metal terminal pads 36, and the metal terminal pads 36 are connected to the corresponding terminal pin ends 30. Align or align vertically. The silicon substrate 14 is provided with a plurality of through holes 38 penetrating the silicon substrate 14, the through holes 38 penetrate the lower surface from the upper surface of the silicon substrate 14, and the metal terminal pins 24 pass through the through holes. 38 to be electrically connected with corresponding metal leads. Laser welding, ultrasonic welding, etc. can be used for electrical connection. The plurality of conductor segments 40 include a first conductor segment 40a extending outward from the bonding pad 42a on the wire bonding area 34a and an alternate conductor segment extending inward from the bonding pad 42a on the wire bonding area 34a. The second conductor segment 40b, wherein part of the conductor part extends into the chip mounting area to increase the packaging density. In the present invention, since the staggered portion of the first conductor segment 40a is away from the OLB region 34a, its physical length is made shorter, and the very long and long distance between the different metal terminal pads 36a in the PGA package of the prior art Very short interconnect traces are eliminated. Therefore, the difference between the physical lengths of the conductor segments 40 of the present invention is less than 50% of that of the conventional PGA package. As a result, electrical signal delays between different channels or conductors have been significantly reduced, but not eliminated. Furthermore, since the distance between any two conductor segments 40 (ie, two segments 40a ) extending in the same direction has been increased by the staggered pattern, crosstalk between these conductor segments 40 is minimized.
请参见图4,所述引脚网格阵列封装结构10还包括网络延时装置,所述网络延时装置形成在所述金属引线中以等化不同导体段40之间的信号延时。所述网络延时装置包括与所述导体段40一体形成的多个第一向外延伸桩构件43a。所述网络延时装置还包括与所述导体段40一体形成的多个第二向外延伸桩构件43b,所述第二向外延伸桩构件43b与所述第一向外延伸桩构件43a相对。每个所述第二向外延伸桩构件43b、第一向外延伸桩构件43a上加载有电容。所述电容接地(DCC)设置,从而实现开路设置。通过将电容接地设置,从而在生产的过程中实现阻抗可调。所述第一向外延伸桩构件43a、第二向外延伸桩构件43b的数量可以根据实际需求设置。通过设置该延时网络延时装置使得能够实现阻抗匹配能力且因此等化不同通道之间的信号延时,由此补偿金属端子引脚24、金属引线及该封装结构内的任意不连续现象的影响。Referring to FIG. 4 , the PGA package structure 10 further includes a network delay device formed in the metal leads to equalize signal delays between different conductor segments 40 . The network delay device includes a plurality of first outwardly extending stake members 43 a integrally formed with the conductor segment 40 . The network delay device further includes a plurality of second outwardly extending pile members 43b integrally formed with the conductor segment 40, the second outwardly extending pile members 43b are opposite to the first outwardly extending pile members 43a . Capacitors are loaded on each of the second outwardly extending pile member 43b and the first outwardly extending pile member 43a. The capacitor is set to ground (DCC), thus achieving an open circuit setting. By setting the capacitor to ground, the impedance can be adjusted during production. The numbers of the first outwardly extending pile member 43a and the second outwardly extending pile member 43b can be set according to actual needs. By setting the time-delay network delay device, it is possible to realize the impedance matching capability and thus equalize the signal delay between different channels, thereby compensating for any discontinuities in the metal terminal pin 24, the metal lead and the package structure. influences.
请参见图1和他2,所述芯片18安装区域为矩形形状。所述芯片18倒置在所述硅衬底14上,位于芯片安装区域内,所述芯片18具有管芯46a、46b,所述芯片18的管芯46a、46b与导电电极电气连接。在本实用新型中,由于采用硅衬底14,其散热能力优秀,所以无需再在盖体22内填充导热材料,节约了成本和简化了生产工艺,又该芯片18可以倒置该硅衬底14上,所以,芯片18的安装更方便,无需额外的采用TAB胶带进行电连接,而且由于硅衬底14的本身特性和制造特性,可以将导体段40设置的更窄,从而进一步减小相邻导体段40之间的干扰,布局也更方便。又由于可以将导体段40设置的更窄,即可以进一步的有效减小阻抗。Please refer to Fig. 1 and Fig. 2, the mounting area of the chip 18 is in the shape of a rectangle. The chip 18 is placed upside down on the silicon substrate 14 in a chip mounting area, the chip 18 has dies 46a, 46b, the dies 46a, 46b of the chip 18 are electrically connected to conductive electrodes. In the utility model, since the silicon substrate 14 is adopted, its heat dissipation capability is excellent, so there is no need to fill the heat-conducting material in the cover body 22, which saves cost and simplifies the production process, and the silicon substrate 14 can be inverted by the chip 18. Therefore, the installation of the chip 18 is more convenient, and there is no need to use additional TAB tape for electrical connection, and due to the inherent characteristics and manufacturing characteristics of the silicon substrate 14, the conductor segment 40 can be set narrower, thereby further reducing the adjacent Interference between the conductor segments 40, the layout is also more convenient. And because the conductor segment 40 can be set narrower, the impedance can be further effectively reduced.
请结合图1和图2,所述硅衬底14形状、大小同封装底板12,并重叠固定在封装底板12上。所述封装底板12上设置有解耦电容器网络,该解耦电容器网络内包括多个分立的电容器25。所述封装底板12上形成有四个第一隅角区域A。通过将矩阵阵列相对于本体构件12的所述四个侧旋转近似45°以具有四个大空间的第一隅角区域A。通过四个第一隅角区域A可以有效的容置原本将正常地形成于硅衬底14上的分立的电容器25。应注意,金属端子引脚24中的某些金属端子引脚(例如端子引脚24a)安置于作为硅衬底14一部分的外引线结合区域34a(OLB区域34a)内。此外,在管芯46a、46b的区域下方安置有一定数目的其他金属端子引脚24b。因此,封装密度得以增大。Please refer to FIG. 1 and FIG. 2 , the shape and size of the silicon substrate 14 are the same as those of the package base plate 12 , and are overlapped and fixed on the package base plate 12 . A decoupling capacitor network is provided on the package base 12 , and the decoupling capacitor network includes a plurality of discrete capacitors 25 . Four first corner regions A are formed on the package base 12 . By rotating the matrix array by approximately 45° relative to the four sides of the body member 12 to have four large spatial first corner regions A. The discrete capacitors 25 that would normally be formed on the silicon substrate 14 can be effectively accommodated by the four first corner regions A. It should be noted that some of the metal terminal pins 24 (for example, the terminal pin 24 a ) are disposed within an outer lead bonding region 34 a (OLB region 34 a ) that is a part of the silicon substrate 14 . Furthermore, a certain number of other metal terminal pins 24b are arranged below the area of the dies 46a, 46b. Therefore, packing density can be increased.
请结合图1,所述盖体22是由导热材料形成。所述盖体22具有空腔48,所述芯片18收纳在空腔48内。在本实施例中,由于无需在盖体22内设置导热材料,从而有助于减小引脚网格阵列封装结构10的整体体积,该盖体22包括与封装底板12上的第一隅角区域A相似的四个第二隅角区域B。这些第二隅角区域B可有效地用于容纳大量分立的电组件52(例如电阻器、电容器、电感器等),电组件52可适当地连接至硅衬底14。该第二隅角区域B为空腔的四个内端角空间。盖体22可优选地由良好的导热材料形成且具有侧凸缘54,侧凸缘54可密闭地密封或结合至封装底板12以防止暴露至大气环境。作为另外一种选择,盖体22可由例如硝酸铝等陶瓷材料制成。盖体22与硅衬底14的结合可以任意数目的传统方式(例如热结合、超声焊接或使用环氧粘合剂的粘合剂结合)来实现。Please refer to FIG. 1 , the cover body 22 is formed of a heat-conducting material. The cover 22 has a cavity 48 , and the chip 18 is accommodated in the cavity 48 . In this embodiment, the overall volume of the PGA package structure 10 is reduced because there is no need to arrange a thermally conductive material in the cover body 22, which includes the first corner on the package bottom plate 12. Area A is similar to the four second corner areas B. These second corner regions B can be effectively used to accommodate a large number of discrete electrical components 52 (eg, resistors, capacitors, inductors, etc.), which can be suitably connected to the silicon substrate 14 . The second corner area B is the four inner end corner spaces of the cavity. Lid 22 may preferably be formed of a material that conducts heat well and has side flanges 54 that may be hermetically sealed or bonded to package backplane 12 to prevent exposure to the atmosphere. Alternatively, the cover 22 may be made of a ceramic material such as aluminum nitrate. Bonding of the lid 22 to the silicon substrate 14 can be accomplished in any number of conventional ways, such as thermal bonding, ultrasonic welding, or adhesive bonding using epoxy adhesives.
综上所述:由于采用硅衬底14,其散热能力优秀,所以无需再在盖体22内填充导热材料,节约了成本和简化了生产工艺,且可以减小引脚网格阵列封装结构10的整体体积;又该芯片18可以倒置该硅衬底14上,所以,芯片18的安装更方便,无需额外的采用TAB胶带进行电连接;而且由于硅衬底14的本身特性和制造特性,可以将导体段40设置的更窄,从而进一步减小相邻导体段40之间的干扰,布局也更方便。又由于可以将导体段40设置的更窄,即可以进一步的有效减小阻抗。To sum up: due to the use of the silicon substrate 14, its heat dissipation capability is excellent, so there is no need to fill the heat-conducting material in the cover body 22, which saves costs and simplifies the production process, and can reduce the size of the pin grid array package structure 10 The overall volume of the chip 18 can be turned upside down on the silicon substrate 14, so the installation of the chip 18 is more convenient, and there is no need to use additional TAB tape for electrical connection; The conductor segment 40 is set narrower, thereby further reducing the interference between adjacent conductor segments 40, and the layout is also more convenient. And because the conductor segment 40 can be set narrower, the impedance can be further effectively reduced.
以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。The technical features of the above-mentioned embodiments can be combined arbitrarily. To make the description concise, all possible combinations of the technical features in the above-mentioned embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, should be considered as within the scope of this specification.
以上所述实施例仅表达了本实用新型的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对实用新型专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本实用新型构思的前提下,还可以做出若干变形和改进,这些都属于本实用新型的保护范围。因此,本实用新型专利的保护范围应以所附权利要求为准。The above-mentioned embodiments only express several implementation modes of the utility model, and the description thereof is relatively specific and detailed, but it should not be understood as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the scope of protection of the utility model patent should be based on the appended claims.
Claims (9)
- A kind of 1. Pin-Grid Array encapsulating structure, it is characterised in that:Including the silicon lining with the front and back being disposed opposite to each other Bottom (14), the positive chip (18) for being arranged on the silicon substrate, the package floor (12) being arranged on below the silicon substrate and It is located above the package floor to surround the lid (22) of the silicon substrate, chip;The package floor has the upper and lower surface being disposed opposite to each other, and multiple metal terminals are provided with the package floor Pin (24), the metal terminal pin run through the package floor, and in forming terminal on the upper surface of the package floor Pin end (30);The silicon substrate is arranged at the upper surface of the package floor, and the metal terminal pin runs through the silicon substrate, described Silicon substrate includes the wire bonding region (34a) and chip mounting area of rectangular shape;The wire bonding region is configured to The relation got around at interval with chip mounting area, the wire bonding region is formed with bonding pad (42a);The silicon substrate Upper surface on formed with metal lead wire and with the metal lead wire electrical connection conductive electrode, the metal lead wire include it is more A conductor segment (40), multiple conductor segments are tied in its end with metal end subpad spaced apart, the metal end subpad with Corresponding the terminal pins end vertical alignment or alignment;Multiple conductor segments are included as described in from wire bond region Outwardly extending first conductor segment (40a) of bonding pad and the friendship to extend internally from the bonding pad on the wire bonding region Wrong the second conductor segment (40b);For the chip upside down on the silicon substrate, the chip has tube core (46a, 46b), tube core and the conduction of the chip Electrode is electrically connected.
- 2. Pin-Grid Array encapsulating structure as claimed in claim 1, it is characterised in that the Pin-Grid Array encapsulation knot Structure further includes network delay device, and the network delay device is formed in the metal lead wire between gradeization different conductor section Signal delay.
- 3. Pin-Grid Array encapsulating structure as claimed in claim 2, it is characterised in that the network delay device include with What the conductor segment was integrally formed multiple first stretches out pile element (43a).
- 4. Pin-Grid Array encapsulating structure as claimed in claim 3, it is characterised in that the network delay device further includes Stretch out pile element (43b) with the conductor segment is integrally formed multiple second, described second stretches out pile element and institute First pile element that stretches out is stated to be oppositely arranged.
- 5. Pin-Grid Array encapsulating structure as claimed in claim 4, it is characterised in that each described second stretches out stake Component, first, which stretch out, is loaded with capacitance on pile element.
- 6. Pin-Grid Array encapsulating structure as claimed in claim 5, it is characterised in that the capacity earth is set.
- 7. Pin-Grid Array encapsulating structure as claimed in claim 1, it is characterised in that the terminal pins, which are arranged, embarks on journey And row rotate 45 ° of matrix array to be formed relative to the package floor (12).
- 8. Pin-Grid Array encapsulating structure as claimed in claim 7, it is characterised in that solution is provided with the package floor Coupling capacitor network, includes multiple discrete capacitors in the decoupling capacitors network, formed with four in the package floor Corner regions (A), multiple capacitors are arranged on four corner regions(A) in.
- 9. Pin-Grid Array encapsulating structure according to claim 1, it is characterised in that the package floor is by the gold Belonging to terminal pins, molding thermoplastic is formed wherein, and the lid is formed by Heat Conduction Material.
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Effective date of registration: 20180518 Address after: 215000 Bamboo Garden Road, Suzhou high tech Zone, Jiangsu Province, No. 209 Patentee after: Suzhou Purple Dragon Lin Mdt InfoTech Ltd Address before: Room 702, 7 / F, Kowloon Road, 555 Nathan Road, Kowloon, Hongkong, China Patentee before: Dragon shape Industrial Development Limited |