CN207143329U - A kind of surface has the workpiece of high density nano diamond thin - Google Patents
A kind of surface has the workpiece of high density nano diamond thin Download PDFInfo
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- CN207143329U CN207143329U CN201720724618.1U CN201720724618U CN207143329U CN 207143329 U CN207143329 U CN 207143329U CN 201720724618 U CN201720724618 U CN 201720724618U CN 207143329 U CN207143329 U CN 207143329U
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- 239000002113 nanodiamond Substances 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 30
- 239000010432 diamond Substances 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000523 sample Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract description 3
- 239000005751 Copper oxide Substances 0.000 abstract description 3
- 229910000431 copper oxide Inorganic materials 0.000 abstract description 3
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 3
- 239000004472 Lysine Substances 0.000 description 3
- 239000011858 nanopowder Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本实用新型提供了一种表面具有高致密纳米金刚石薄膜的工件,包括工件基体和紧密结合在所述工件基体表面的高致密纳米金刚石薄膜,所述工件基体为硅基体、二氧化硅基体、碳化硅基体、氧化铜基体、氮化硅基体或硬质合金基体,所述金刚石薄膜的厚度为50‑150nm。本实用新型的表面具有高致密纳米金刚石薄膜的工件,其工件基体材质可选种类多,工件形状构造不限,且金刚石薄膜具有纳米级厚度,薄膜质量高,结合力强,推动了金刚石薄膜在纳米机电系统中的应用。
The utility model provides a workpiece with a high-density nano-diamond film on the surface, which includes a workpiece substrate and a high-density nano-diamond film tightly combined on the surface of the workpiece substrate. The workpiece substrate is a silicon substrate, a silicon dioxide Silicon substrate, copper oxide substrate, silicon nitride substrate or cemented carbide substrate, the thickness of the diamond film is 50-150nm. The workpiece of the utility model has a high-density nano-diamond film on the surface, and the material of the workpiece substrate can be selected from many types, the shape and structure of the workpiece are not limited, and the diamond film has a nanometer thickness, high film quality, and strong binding force, which promotes the diamond film in Applications in nanoelectromechanical systems.
Description
技术领域technical field
本实用新型涉及纳米金刚石技术领域,特别是涉及一种表面具有高致密纳米金刚石薄膜的工件。The utility model relates to the technical field of nano-diamond, in particular to a workpiece with a high-density nano-diamond film on the surface.
背景技术Background technique
金刚石薄膜由于其高熔点、高热导率、高硬度、绝缘性好、抗腐蚀性强、介电常量小,具有宽带隙半导体特征及化学稳定性好等特性,使其在耐磨涂层、生物医学、薄膜微传感器、纳米机电系统等众多高新技术领域具有广阔的应用前景。Due to its high melting point, high thermal conductivity, high hardness, good insulation, strong corrosion resistance, small dielectric constant, wide bandgap semiconductor characteristics and good chemical stability, the diamond film is used in wear-resistant coatings, biological Many high-tech fields such as medicine, thin-film microsensors, and nano-electromechanical systems have broad application prospects.
然而目前为了获得高质量金刚石薄膜,通常需要使用金刚石纳米粉对基体进行涂覆预处理以提高金刚石薄膜在不同基体材料上的形核密度,但受基体形状尺寸的限制,很难让金刚石纳米粉均匀地涂覆在基体表面,尤其是在纳米机电系统中,薄膜的厚度需要控制在纳米级,要实现金刚石纳米粉的均匀涂覆更难,从而使得目前很难在微纳米工件上获得大面积、高质量的纳米级高致密金刚石薄膜,在具有复杂结构的微纳米工件上更难。However, in order to obtain high-quality diamond films, it is usually necessary to pre-coat the substrate with diamond nanopowders to increase the nucleation density of diamond films on different substrate materials, but limited by the shape and size of the substrate, it is difficult to make diamond nanopowders Evenly coated on the surface of the substrate, especially in nano-electromechanical systems, the thickness of the film needs to be controlled at the nanometer level, and it is more difficult to achieve uniform coating of diamond nano-powder, which makes it difficult to obtain a large area on the micro-nano workpiece. , High-quality nano-scale high-density diamond film, which is more difficult on micro-nano workpieces with complex structures.
实用新型内容Utility model content
鉴于此,本实用新型提供了一种表面具有高致密纳米金刚石薄膜的工件,该工件的基体材质可选种类多,工件形状构造不限,可以是具有复杂形状的微纳米工件,且金刚石薄膜具有纳米级厚度,薄膜质量高,结合力强。In view of this, the utility model provides a workpiece with a high-density nano-diamond film on the surface. The base material of the workpiece can be selected from many types, and the shape and structure of the workpiece are not limited. It can be a micro-nano workpiece with a complex shape, and the diamond film has Nanoscale thickness, high film quality and strong binding force.
具体地,本实用新型提供了一种表面具有高致密纳米金刚石薄膜的工件,包括工件基体和紧密结合在所述工件基体表面的高致密纳米金刚石薄膜,所述工件基体为硅基体、二氧化硅基体、碳化硅基体、氧化铜基体、氮化硅基体或硬质合金基体,所述金刚石薄膜的厚度为50-150nm。Specifically, the utility model provides a workpiece with a high-density nano-diamond film on the surface, including a workpiece substrate and a high-density nano-diamond film tightly bonded to the surface of the workpiece substrate. The workpiece substrate is a silicon substrate, silicon dioxide The substrate, the silicon carbide substrate, the copper oxide substrate, the silicon nitride substrate or the cemented carbide substrate, the thickness of the diamond film is 50-150nm.
可选地,所述金刚石薄膜的厚度为50-100nm。Optionally, the thickness of the diamond film is 50-100 nm.
进一步可选地,所述金刚石薄膜的厚度为60-80nm。Further optionally, the thickness of the diamond film is 60-80 nm.
所述金刚石薄膜的硬度为75-100GPa。The hardness of the diamond film is 75-100GPa.
所述金刚石薄膜与所述工件基体的结合力为90-120N。The bonding force between the diamond film and the workpiece substrate is 90-120N.
所述工件基体为具有复杂三维构型的微纳米工件。The workpiece matrix is a micro-nano workpiece with complex three-dimensional configuration.
所述工件基体为原子力显微分析仪探针。The workpiece substrate is an atomic force microanalyzer probe.
所述探针为硅材质探针或氮化硅材质探针。The probes are silicon probes or silicon nitride probes.
本实用新型的表面具有高致密纳米金刚石薄膜的工件,其工件基体材质可选种类多,工件形状构造不限,且金刚石薄膜具有纳米级厚度,薄膜质量高,结合力强,推动了金刚石薄膜在纳米机电系统中的应用。The workpiece of the utility model has a high-density nano-diamond film on the surface, and the material of the workpiece substrate can be selected from many types, and the shape and structure of the workpiece are not limited, and the diamond film has a nano-level thickness, high film quality, and strong binding force, which promotes the diamond film. Applications in nanoelectromechanical systems.
本实用新型的优点将会在下面的说明书中部分阐明,一部分根据说明书是显而易见的,或者可以通过本实用新型实施例的实施而获知。The advantages of the utility model will be partly explained in the following description, and a part is obvious according to the description, or can be known through the implementation of the embodiments of the utility model.
附图说明Description of drawings
图1为本实用新型提供的表面具有高致密纳米金刚石薄膜的工件的剖面结构示意图;Fig. 1 is the sectional structure schematic diagram of the workpiece that the surface provided by the utility model has highly dense nano-diamond film;
图2为本实用新型提供的表面具有高致密纳米金刚石薄膜的硅片的SEM图。Fig. 2 is the SEM image of the silicon wafer with high-density nano-diamond film on the surface provided by the utility model.
具体实施方式Detailed ways
以下所述是本实用新型实施例的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本实用新型实施例原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本实用新型实施例的保护范围。The following description is a preferred implementation of the embodiment of the utility model. It should be pointed out that for those of ordinary skill in the art, some improvements and modifications can be made without departing from the principles of the embodiment of the utility model. These improvements and modifications are also regarded as the protection scope of the embodiments of the present utility model.
如图1所示,为本实用新型提供的表面具有高致密纳米金刚石薄膜的工件100的剖面结构示意图,包括工件基体10和紧密结合在所述工件基体10表面的高致密纳米金刚石薄膜11,其中所述工件基体10可以是硅基体、二氧化硅基体、碳化硅基体、氧化铜基体、氮化硅基体或硬质合金基体,所述金刚石薄膜11的厚度为50-150nm。可选地,所述金刚石薄膜的厚度为50-100nm。进一步可选地,所述金刚石薄膜的厚度为60-80nm。As shown in Figure 1, the sectional structure schematic diagram of the workpiece 100 that the surface provided by the utility model has high-density nano-diamond film, comprises workpiece substrate 10 and the high-density nano-diamond film 11 that is closely bonded on the surface of described workpiece substrate 10, wherein The workpiece substrate 10 can be a silicon substrate, a silicon dioxide substrate, a silicon carbide substrate, a copper oxide substrate, a silicon nitride substrate or a cemented carbide substrate, and the thickness of the diamond film 11 is 50-150 nm. Optionally, the thickness of the diamond film is 50-100 nm. Further optionally, the thickness of the diamond film is 60-80 nm.
本实用新型中,所述工件基体的具体形状结构不限。具体地,工件基体可以是国防、工业、航空航天、生物医学、精密仪表、通信、半导体、汽车、环保、生物工程和自动化等领域的工件结构。例如是刀具、开关器件、集成电路、存储器、传感器、原子力显微分析仪、打印机等中的部件。In the present invention, the specific shape and structure of the workpiece base is not limited. Specifically, the workpiece substrate may be a workpiece structure in fields such as national defense, industry, aerospace, biomedicine, precision instrumentation, communication, semiconductor, automobile, environmental protection, bioengineering, and automation. Examples are components in tools, switching devices, integrated circuits, memories, sensors, atomic force microscopes, printers, etc.
本实用新型一实施方式中,所述工件基体为原子力显微分析仪探针。所述探针为硅材质探针或氮化硅材质探针。所述探针的表面具有所述的高致密纳米金刚石薄膜。该金刚石薄膜能有效提高探针的强度,避免探针发生断裂。In one embodiment of the utility model, the workpiece substrate is a probe of an atomic force microanalyzer. The probes are silicon probes or silicon nitride probes. The surface of the probe has the high-density nano-diamond film. The diamond thin film can effectively improve the strength of the probe and prevent the probe from breaking.
本实用新型中,所述工件基体可以是微纳机电系统中具有复杂三维构型的微纳米工件。In the present invention, the workpiece substrate may be a micro-nano workpiece with a complex three-dimensional configuration in a micro-nano electromechanical system.
本实用新型中,所述金刚石薄膜的硬度为75-100Gpa,更具体地为80-95Gpa,所述金刚石薄膜与所述工件基体的结合力为90-120N,更具体地为100-110N。In the present invention, the hardness of the diamond film is 75-100Gpa, more specifically 80-95Gpa, and the bonding force between the diamond film and the workpiece substrate is 90-120N, more specifically 100-110N.
图2为本实用新型一实施方式中的表面具有高致密纳米金刚石薄膜的硅片的SEM图。图2显示,纳米金刚石薄膜21紧密结合在所述硅片基体20上,厚度为50nm。Fig. 2 is an SEM image of a silicon wafer with a high-density nano-diamond film on the surface in an embodiment of the present invention. FIG. 2 shows that the nano-diamond film 21 is tightly bonded on the silicon substrate 20 with a thickness of 50nm.
本实用新型提供的表面具有高致密纳米金刚石薄膜的工件可以通过如下方式制备得到:The workpiece provided by the utility model with a high-density nano-diamond film on the surface can be prepared in the following manner:
1、取工件基体,将所述工件基体进行表面预处理,使所述工件基体表面带正电或负电;1. Take the workpiece substrate, and carry out surface pretreatment on the workpiece substrate, so that the surface of the workpiece substrate is positively or negatively charged;
2、将赖氨酸加入到水中,得到赖氨酸溶液,向所述赖氨酸溶液中加入纳米金刚石粉,超声分散后得到纳米金刚石悬浊液,所述纳米金刚石悬浊液中的纳米金刚石颗粒表面带正电或负电;2. Add lysine to water to obtain a lysine solution, add nano-diamond powder to the lysine solution, and obtain a nano-diamond suspension after ultrasonic dispersion, and the nano-diamond in the nano-diamond suspension The particle surface is positively or negatively charged;
3、将经表面预处理后的工件基体浸入到与所述工件基体带相反电荷的纳米金刚石悬浊液中,超声震荡,使所述纳米金刚石悬浊液中的纳米金刚石颗粒吸附在所述工件基体表面;3. Immerse the workpiece substrate after surface pretreatment into the nano-diamond suspension with the opposite charge to the workpiece substrate, and ultrasonically vibrate, so that the nano-diamond particles in the nano-diamond suspension are adsorbed on the workpiece substrate surface;
4、吸附完成后,取出所述工件基体,清洗并经氮气吹干后,采用化学气相沉积设备,在所述工件基体上生长金刚石薄膜,得到表面具有高致密纳米金刚石薄膜的工件。4. After the adsorption is completed, take out the workpiece substrate, clean it and dry it with nitrogen gas, and then use chemical vapor deposition equipment to grow a diamond film on the workpiece substrate to obtain a workpiece with a high-density nano-diamond film on the surface.
本实用新型提供的表面具有高致密纳米金刚石薄膜的工件,其工件基体材质可选种类多,工件形状构造不限,且金刚石薄膜具有纳米级厚度,薄膜质量高,结合力强,推动了金刚石薄膜在纳米机电系统中的应用。The workpiece provided by the utility model has a high-density nano-diamond film on the surface. There are many types of workpiece substrate materials to choose from. Applications in nanoelectromechanical systems.
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