CN207095585U - A kind of Multifunction Sensor based on double gate thin-film transistor - Google Patents
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Abstract
本实用新型公开了一种基于双栅薄膜晶体管的多功能传感器，包括双栅薄膜晶体管和在所述双栅薄膜晶体管的顶栅极耦合的物理场中的一种或多种；所述物理场包括光场、热场、力场或磁场。所述物理场为热场和力场。所述基于双栅薄膜晶体管的多功能传感器包括集成于同一柔性衬底并且相互独立的至少两个双栅薄膜晶体管；其中，至少一个所述双栅薄膜晶体管的顶栅极表面设有极化的压电材料或非极化的压电材料；所述压电材料的表面还设有金属材料。采用本实用新型所述的基于双栅薄膜晶体管的多功能传感器，与不同的物理场耦合，可以形成多种不同功能的传感器。
The utility model discloses a multi-functional sensor based on a double-gate thin film transistor, which comprises a double-gate thin film transistor and one or more physical fields coupled to the top gate of the double-gate thin film transistor; the physical field These include light, thermal, force, or magnetic fields. The physical fields are thermal fields and force fields. The multi-functional sensor based on double-gate thin film transistors includes at least two double-gate thin film transistors that are integrated on the same flexible substrate and are independent of each other; wherein, the top gate surface of at least one of the double-gate thin film transistors is provided with a polarized A piezoelectric material or a non-polarized piezoelectric material; the surface of the piezoelectric material is also provided with a metal material. The multifunctional sensor based on the double-gate thin film transistor described in the utility model can be coupled with different physical fields to form a variety of sensors with different functions.
Description
技术领域technical field
本实用新型属于传感器技术领域，具体涉及一种基于双栅薄膜晶体管的多功能传感器。The utility model belongs to the technical field of sensors, in particular to a multifunctional sensor based on a double-gate thin film transistor.
背景技术Background technique
作为大面积电子产品的基础性组成部分，双栅薄膜晶体管及其相关产品享受了激动人心的开发实施时间。其主要应用平板显示器已经成长为数十亿美元的行业，并持续蓬勃发展。然而，非显示应用中TFT的潜力很少被探索，尚未成熟。As a fundamental building block of large-area electronics, dual-gate thin-film transistors and related products have enjoyed an exciting development and implementation timeline. Its primary application, flat-panel displays, has grown into a multi-billion dollar industry that continues to thrive. However, the potential of TFTs in non-display applications has been little explored and has not yet matured.
例如，柔性电子皮肤是一种新型机器人皮肤，其应用于仿人型机器人上，可拥有柔性可弯折的特点。同时还可以作用于其表面，用来检测压力和周围环境的温度。For example, flexible electronic skin is a new type of robotic skin, which can be applied to humanoid robots and can be flexible and bendable. At the same time, it can also act on its surface to detect pressure and the temperature of the surrounding environment.
现阶段大部分电子皮肤采用多种不同材料实现压力与温度的检测，导致其制备工艺变得非常复杂。例如，在集成电容式压力传感器时，通常会有相邻原件之间的串扰的问题,这样会影响期间的检测精度；在集成CMOS的压力传感器时，则会有制作成本高和无法兼容柔性衬底的问题。At present, most electronic skins use a variety of different materials to detect pressure and temperature, which makes their preparation process very complicated. For example, when integrating a capacitive pressure sensor, there is usually a problem of crosstalk between adjacent components, which will affect the detection accuracy during the period; when integrating a CMOS pressure sensor, there will be high manufacturing costs and incompatibility with flexible substrates. Bottom question.
实用新型内容Utility model content
为了解决上述问题，本实用新型的目的在于：实用新型一种集成的基于双栅薄膜晶体管的多功能传感器，与不同的物理场耦合，可以形成多种不同功能的传感器。In order to solve the above problems, the purpose of this utility model is: a utility model is an integrated multi-functional sensor based on a double-gate thin film transistor, which can be coupled with different physical fields to form a variety of sensors with different functions.
为实现上述目的，本实用新型按以下技术方案予以实现的：In order to achieve the above object, the utility model is realized according to the following technical solutions:
本实用新型所述的基于双栅薄膜晶体管的多功能传感器，包括双栅薄膜晶体管和在所述双栅薄膜晶体管的顶栅极耦合的物理场中的一种或多种；所述物理场包括光场、热场、力场或磁场。The multi-functional sensor based on the double-gate thin film transistor described in the utility model includes a double-gate thin film transistor and one or more physical fields coupled to the top gate of the double-gate thin film transistor; the physical field includes Fields of light, heat, force or magnetic fields.
进一步地，所述物理场为热场和力场。Further, the physical field is a thermal field and a force field.
进一步地，包括集成于同一柔性衬底并且相互独立的至少两个双栅薄膜晶体管；其中，至少一个所述双栅薄膜晶体管的顶栅极表面设有极化的压电材料或非极化的压电材料；所述压电材料的表面还设有金属材料。Further, it includes at least two dual-gate thin film transistors that are integrated on the same flexible substrate and are independent of each other; wherein, the top gate surface of at least one of the dual-gate thin film transistors is provided with a polarized piezoelectric material or a non-polarized piezoelectric material. Piezoelectric material; the surface of the piezoelectric material is also provided with metal material.
进一步地，所述压电材料为聚偏氟乙烯PVDF。Further, the piezoelectric material is polyvinylidene fluoride PVDF.
进一步地，所述双栅薄膜晶体管与非极化的压电材料、金属材料形成温度传感器。Further, the double-gate thin film transistor and the non-polarized piezoelectric material and metal material form a temperature sensor.
进一步地，所述双栅薄膜晶体管的顶栅极、非极化的压电材料和金属材料形成可变电容。Further, the top gate of the double-gate thin film transistor, the non-polarized piezoelectric material and the metal material form a variable capacitance.
进一步地，所述双栅薄膜晶体管的源极接地。Further, the source of the double-gate TFT is grounded.
进一步地，所述双栅薄膜晶体管与极化压电材料、金属材料形成压力传感器。Further, the double-gate thin film transistor, polarized piezoelectric material and metal material form a pressure sensor.
进一步地，所述极化的压电材料的顶层与双栅薄膜晶体管的源极连接，并且接地。Further, the top layer of the polarized piezoelectric material is connected to the source of the double-gate thin film transistor and grounded.
与现有技术相比，本实用新型的有益效果是：Compared with the prior art, the beneficial effects of the utility model are:
本实用新型所述的基于双栅薄膜晶体管的多功能传感器，通过在双栅薄膜晶体管的顶栅极耦合物理场，从而使得其不仅仅只是在显示领域，使得其在传感以及存储领域得以发展和推广，具体地，该物理场包括有光场、热场、力场或磁场，即双栅薄膜晶体管与光场耦合，形成光电传感器；与热场耦合，则形成温度传感器；与力场耦合，形成压力传感器；与磁场耦合，形成磁传感器，实际过程中，与忆阻器结合运用于定义0-1之间的逻辑，其将彻底革新当前的计算机和电子产品。The multi-functional sensor based on the double-gate thin film transistor described in the utility model, by coupling the physical field on the top gate of the double-gate thin film transistor, makes it not only in the field of display, but also in the field of sensing and storage. And promotion, specifically, the physical field includes a light field, a thermal field, a force field or a magnetic field, that is, a double-gate thin film transistor is coupled with a light field to form a photoelectric sensor; coupled with a thermal field, a temperature sensor is formed; coupled with a force field , to form a pressure sensor; coupled with a magnetic field to form a magnetic sensor, in the actual process, combined with a memristor to define the logic between 0-1, which will completely revolutionize the current computer and electronic products.
与此同时，也可以是以上各物理场之间的有机组合，例如，热场与力场的结合，形成具有温度和压力传感的传感器。针对于该种传感器，在实际制备过程中，所述基于双栅薄膜晶体管的多功能传感器是在同一柔性衬底表面上制作而成，并且具有压力传感的部分和具有温度传感的部分，二者的制备方法基本上一致，可以同步进行，只是在于顶栅极耦合的材料进行的极化或非极化的处理即可完成。At the same time, it can also be an organic combination of the above physical fields, for example, the combination of thermal field and force field to form a sensor with temperature and pressure sensing. For this kind of sensor, in the actual preparation process, the multi-functional sensor based on the double-gate thin film transistor is fabricated on the same flexible substrate surface, and has a pressure sensing part and a temperature sensing part, The preparation methods of the two are basically the same and can be carried out synchronously, except that the polarization or non-polarization treatment of the top gate coupling material can be completed.
从以上工艺上来比，首先，其无需采用多种不用材料来实现压力和温度的检测；同时，压力部分和温度部分的制备方法基本上一致，可以同步进行，大大节省了制备的时间，提升了效率，成本也就相应降低。另外，其也不存在将多种不同材料集成过程中造成的串扰问题，进而提供了检测的精度。Compared with the above process, first of all, it does not need to use a variety of materials to realize the detection of pressure and temperature; at the same time, the preparation methods of the pressure part and the temperature part are basically the same, and can be carried out simultaneously, which greatly saves the preparation time and improves the Efficiency, the cost will be reduced accordingly. In addition, it does not have the problem of crosstalk caused by the integration process of multiple different materials, thereby improving the accuracy of detection.
附图说明Description of drawings
下面结合附图对本实用新型的具体实施方式作进一步详细的说明，其中：Below in conjunction with accompanying drawing, the specific embodiment of the present utility model is described in further detail, wherein:
图1是本实用新型实施例1所述的基于双栅薄膜晶体管的多功能传感器的结构示意简图；FIG. 1 is a schematic structural diagram of a multi-functional sensor based on a double-gate thin film transistor described in Embodiment 1 of the present invention;
图2是本实用新型实施例1所述的基于双栅薄膜晶体管的多功能传感器中温度部分的等效电路图；Fig. 2 is the equivalent circuit diagram of the temperature part in the multi-function sensor based on double-gate thin film transistor described in embodiment 1 of the present invention;
图3是本实用新型实施例1所述的基于双栅薄膜晶体管的多功能传感器中压力部分的等效电路图；Fig. 3 is the equivalent circuit diagram of the pressure part in the multi-function sensor based on the double-gate thin film transistor described in Embodiment 1 of the present invention;
图4本实用新型实施例2所述的基于双栅薄膜晶体管的多功能传感器的结构示意简图；Fig. 4 is a schematic structural diagram of a multi-functional sensor based on a double-gate thin film transistor described in Embodiment 2 of the utility model;
图5本实用新型实施例3所述的基于双栅薄膜晶体管的多功能传感器的等效电路图；Fig. 5 is the equivalent circuit diagram of the multi-functional sensor based on double-gate thin film transistor described in embodiment 3 of the present utility model;
图6本实用新型实施例4所述的基于双栅薄膜晶体管的多功能传感器的结构示意简图。FIG. 6 is a schematic structural diagram of a multi-functional sensor based on a double-gate thin film transistor described in Embodiment 4 of the present utility model.
图中：In the picture:
1：双栅薄膜晶体管1: Double gate thin film transistor
10：源极 11：顶栅极 12：压电材料 13：源极 14：金属材料 15：柔性衬底10: Source 11: Top Gate 12: Piezoelectric Material 13: Source 14: Metal Material 15: Flexible Substrate
16：底栅绝缘层 17：有源层 18：顶栅绝缘层 19：底栅极16: Bottom gate insulating layer 17: Active layer 18: Top gate insulating layer 19: Bottom gate
2：忆阻器2: Memristor
具体实施方式Detailed ways
以下结合附图对本实用新型的优选实施例进行说明，应当理解，此处所描述的优选实施例仅用于说明和解释本实用新型，并不用于限定本实用新型。The preferred embodiments of the present utility model are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present utility model, and are not intended to limit the present utility model.
本实用新型所述的基于双栅薄膜晶体管的多功能传感器，是通过将双栅薄膜晶体管1的顶栅极11与物理场进行耦合，形成不同功能的传感器。具体地，该物理场包括有光场、热场、力场或者磁场，其可以进行一种或多种的有机组合。The multi-functional sensor based on the double-gate thin film transistor described in the utility model is to form a sensor with different functions by coupling the top gate 11 of the double-gate thin film transistor 1 with the physical field. Specifically, the physical field includes a light field, a thermal field, a force field or a magnetic field, and one or more of them can be organically combined.
实施例1：Example 1:
本实施例中的物理场包含热场和力场，即与双栅薄膜晶体管1进行耦合后，形成具有温度传感和压力传感的传感器，具体地，其包括集成于同一柔性衬底15并且相互独立的至少两个双栅薄膜晶体管1，其中，至少一个所述双栅薄膜晶体管1的顶栅极11表面设有极化的压电材料12或非极化的压电材料12；所述压电材料12的表面还设有金属材料14。也就是说，其中至少有一个是作为温度传感的部分，一个作为压力传感的部分。The physical field in this embodiment includes a thermal field and a force field, that is, after being coupled with the double-gate thin film transistor 1, a sensor with temperature sensing and pressure sensing is formed. Specifically, it includes a sensor integrated on the same flexible substrate 15 and At least two double-gate thin film transistors 1 that are independent of each other, wherein at least one of the double-gate thin film transistors 1 is provided with a polarized piezoelectric material 12 or a non-polarized piezoelectric material 12 on the surface of the top gate 11; The surface of the piezoelectric material 12 is also provided with a metal material 14 . That is to say, at least one of them is used as a temperature sensing part, and one is used as a pressure sensing part.
因此，在具体使用过程中，当外界温度的变化，导致非极化的压电材料的变化，即电容的变化，继而使得温度传感部分的双栅薄膜晶体管的电流发生变化，并且该电流变化便于采集和转化。另外，通过对器件工作偏压的调节，使其在亚阈值区工作，因电容变化引起的顶栅电压的微小变化可以导致电流指数数量级的变化，这样有效地提升了灵敏度。Therefore, in the specific use process, when the external temperature changes, the non-polarized piezoelectric material changes, that is, the capacitance changes, and then the current of the double-gate thin film transistor in the temperature sensing part changes, and the current changes Easy to collect and transform. In addition, by adjusting the working bias of the device to make it work in the subthreshold region, the small change in the top gate voltage caused by the capacitance change can lead to an exponential change in the current, which effectively improves the sensitivity.
当外界压力的变化，导致极化的压电材料将压力转化为电压信号，并施加于双栅薄膜晶体管的顶栅并最终改变其输出电流大小。同样，当其工作于亚阈值区域时拥有最大的灵敏度。When the external pressure changes, the polarized piezoelectric material converts the pressure into a voltage signal, which is applied to the top gate of the double-gate TFT and finally changes its output current. Also, it has the greatest sensitivity when working in the subthreshold region.
本实用新型所述的基于双栅薄膜晶体管的多功能传感器，以两个双栅薄膜晶体管1为例。具体如图1所示，其包括两个双栅薄膜晶体管1，其中一个的顶栅极11的表面设有极化的压电材料12，另一个的顶栅极11的表面设有非极化的压电材料12，然后在压电材料12的表面均设有金属材料14。The multi-functional sensor based on the double-gate thin film transistor described in the utility model takes two double-gate thin film transistors 1 as an example. Specifically as shown in FIG. 1 , it includes two double-gate thin film transistors 1 , one of which is provided with a polarized piezoelectric material 12 on the surface of the top gate 11 , and the other is provided with a non-polarized piezoelectric material 12 on the surface of the top gate 11 . The piezoelectric material 12 is provided, and then the metal material 14 is provided on the surface of the piezoelectric material 12 .
具体地，所述双栅薄膜晶体管1都为双栅极薄膜晶体管，其具体结构自下而上依次分布为：柔性衬底15、底栅绝缘层16、有源层17、顶栅绝缘层18；所述底栅绝缘层16内设有底栅极19，所述有源层内设有源极10和漏极13。Specifically, the double-gate thin film transistors 1 are double-gate thin film transistors, and their specific structures are distributed sequentially from bottom to top: a flexible substrate 15, a bottom gate insulating layer 16, an active layer 17, and a top gate insulating layer 18 ; The bottom gate insulating layer 16 is provided with a bottom gate 19, and the active layer is provided with a source 10 and a drain 13.
其中，所述金属材料14本实施例中采用的是Au的材质，具有更好的特性；所述底栅绝缘层16和顶栅绝缘层18采用的是绝缘介质，本实施例采用的是氮化硅SiNx材质；所述有源层17采用的是氢化非晶硅a-Si:H材质；所述柔性衬底15采用的是聚酰亚胺PI材质。Wherein, the metal material 14 used in this embodiment is made of Au, which has better characteristics; the bottom gate insulating layer 16 and the top gate insulating layer 18 use insulating medium, and what this embodiment uses is nitrogen SiNx material; the active layer 17 is made of hydrogenated amorphous silicon a-Si:H material; the flexible substrate 15 is made of polyimide PI material.
所述压电材料12的材质为聚偏氟乙烯PVDF，也可以是聚偏氟乙烯的共聚物。具体地，所述双栅薄膜晶体管1与非极化的压电材料12、金属材料14形成温度传感器，即所述双栅薄膜晶体管1的顶栅极11、非极化的压电材料12和金属材料14形成可变电容，其随温度的变化而变化。The piezoelectric material 12 is made of polyvinylidene fluoride PVDF, or a copolymer of polyvinylidene fluoride. Specifically, the double-gate thin film transistor 1 forms a temperature sensor with the non-polarized piezoelectric material 12 and the metal material 14, that is, the top gate 11 of the double-gate thin film transistor 1, the non-polarized piezoelectric material 12 and the The metallic material 14 forms a variable capacitance that varies with temperature.
当外部温度发生变化时，首先作用于金属材料14，然后传递给所述压电材料12，所述压电材料12内的聚偏氟乙烯PVDF因外部温度的变化，则会发生电容的变化，从而使得双栅薄膜晶体管的电流发生改变，进而通过外围电路的放大处理，即可获取对应精准的变化值，即具有高灵敏度。When the external temperature changes, it first acts on the metal material 14, and then transmits it to the piezoelectric material 12, and the polyvinylidene fluoride PVDF in the piezoelectric material 12 changes in capacitance due to changes in the external temperature. As a result, the current of the double-gate thin film transistor changes, and then through the amplification processing of the peripheral circuit, the corresponding accurate change value can be obtained, that is, it has high sensitivity.
需要说明的是，对于类似于聚偏氟乙烯PVDF具有同等功效的其他材质，也是属于本实用新型所述的压电材料12保护的范围，只是优选以上材质。It should be noted that other materials similar to polyvinylidene fluoride (PVDF) having the same effect also belong to the scope of protection of the piezoelectric material 12 described in the present invention, but the above materials are preferred.
同时，如图2所示，其为等效后的电路，所述双栅薄膜晶体管1的源极20接地，其电路系统是十分简单，成本也十分低。Meanwhile, as shown in FIG. 2 , it is an equivalent circuit, the source 20 of the double-gate thin film transistor 1 is grounded, and its circuit system is very simple and the cost is very low.
对于压力传感部分，所述双栅薄膜晶体管1与极化的压电材料12、金属材料14形成压力传感器。具体地，所述极化的压电材料12，具有较强的压电特性，并可以将压力转化为电压信号。其等效电路图如图3所示，所述极化的压电材料12的顶层与双栅薄膜晶体管1的源极连接，并且接地。这样极化的压电材料12将压力信号转换为电压信号，并施加于双栅薄膜晶体管1的顶栅极，并最终改变其输出电流大小。For the pressure sensing part, the double-gate thin film transistor 1 and the polarized piezoelectric material 12 and metal material 14 form a pressure sensor. Specifically, the polarized piezoelectric material 12 has strong piezoelectric properties and can convert pressure into a voltage signal. Its equivalent circuit diagram is shown in FIG. 3 , the top layer of the polarized piezoelectric material 12 is connected to the source of the double-gate TFT 1 and grounded. The piezoelectric material 12 polarized in this way converts the pressure signal into a voltage signal, which is applied to the top gate of the double-gate thin film transistor 1 , and finally changes the magnitude of its output current.
以上是对本实用新型所述的基于双栅薄膜晶体管的多功能传感器的结构及其性能做出的详细说，下面对其制备方法做具体描述，步骤如下：The above is a detailed description of the structure and performance of the multi-functional sensor based on double-gate thin film transistors described in the present invention. The preparation method is described in detail below, and the steps are as follows:
S1：在柔性衬底15表面分别溅射一层金属并图形化，形成两个独立的底栅极19；S1: respectively sputtering and patterning a layer of metal on the surface of the flexible substrate 15 to form two independent bottom gates 19;
S2：利用薄膜沉积工艺，在两个底栅极19上分别依次沉积底栅绝缘层16和有源层17；S2: Depositing the bottom gate insulating layer 16 and the active layer 17 sequentially on the two bottom gates 19 respectively by using a thin film deposition process;
S3：利用湿法或干法刻蚀工艺，在两个有源层17表面分别对应形成两组源极10和漏极13；S3: using a wet or dry etching process, respectively forming two sets of source electrodes 10 and drain electrodes 13 on the surfaces of the two active layers 17;
S4：利用薄膜沉积工艺，在每组所述源极10和漏极13上沉积顶栅绝缘层18；S4: using a thin film deposition process, depositing a top gate insulating layer 18 on each set of source electrodes 10 and drain electrodes 13;
S5：在所述顶栅绝缘层18的表面涂布一层压电材料12；S5: coating a layer of piezoelectric material 12 on the surface of the top gate insulating layer 18;
S6：在所述压电材料12成膜后对其施加高电场极化，形成极化的压电材料12；S6: After the piezoelectric material 12 is formed into a film, it is polarized by applying a high electric field to form a polarized piezoelectric material 12;
S7：在所述极化的压电材料12和未极化的压电材料12上再沉积金属材料14。S7: re-depositing the metal material 14 on the polarized piezoelectric material 12 and the unpolarized piezoelectric material 12 .
具体地，采用双栅薄膜晶体管与柔性衬底集成,克服了现有电子肌肤面临的耐腐蚀和无法集成到柔性材料的问题.将极化的压电材料附着在双栅薄膜晶体管的顶栅,压力可以经由极化压电材料薄膜转化为双栅薄膜晶体管的输出电流，从而实现压力的传感。Specifically, the integration of double-gate thin film transistors with flexible substrates overcomes the problems of corrosion resistance and inability to integrate into flexible materials faced by existing electronic skins. Attaching polarized piezoelectric materials to the top gate of double-gate thin film transistors, The pressure can be converted into the output current of the double-gate thin film transistor through the polarized piezoelectric material film, so as to realize the pressure sensing.
同时，将未极化的压电材料附着在双栅薄膜晶体管的顶栅极，在未极化的压电材料的另一端加合适的偏置电压，可以将温度信号转化，从而实现稳定的传感。At the same time, the unpolarized piezoelectric material is attached to the top gate of the double-gate thin film transistor, and an appropriate bias voltage is applied to the other end of the unpolarized piezoelectric material to convert the temperature signal, thereby achieving stable transmission. sense.
以上制备方法无需采用不同的材料分别制成压力传感和温度传感，然后集成在一起，即只是在沉积压电材料之后，对于压力传感的部分还需要施加高电场极化，从而使得其在压力的变化下产生电压信号，并施加于双栅薄膜晶体管的顶栅，并最终改变其输出电流的大小。对于温度传感器的部分，则无需以上工艺，就可以形成温度变化带来电容变化，进而转化为双栅薄膜晶体管的输出电流的变化。该方法不仅大大简化了加工的工艺，还避免了串扰的问题，也就相应提升了检测的精度。The above preparation method does not need to use different materials to make the pressure sensor and temperature sensor separately, and then integrate them together, that is, after depositing the piezoelectric material, a high electric field polarization needs to be applied to the pressure sensor part, so that its A voltage signal is generated under the change of pressure, and applied to the top gate of the double-gate thin film transistor, and finally changes the magnitude of its output current. For the part of the temperature sensor, without the above process, the temperature change can cause a capacitance change, which can be converted into a change in the output current of the double-gate thin film transistor. This method not only greatly simplifies the processing technology, but also avoids the problem of crosstalk, and correspondingly improves the detection accuracy.
本实用新型将温度传感和压力传感集成在同一柔性衬底，并且拥有微米级的尺寸结构，在保持制作工序简单的前提下，大大降低了产品的生产成本。因此，其可以实现大面积高密度的传感器布置的电子肌肤，如果布置足够多数量的温度传感器，则还可以构建多点温度压力信息采集系统。The utility model integrates temperature sensing and pressure sensing on the same flexible substrate, and has a micron-level size structure, and greatly reduces the production cost of the product on the premise of keeping the manufacturing process simple. Therefore, it can realize electronic skin with large-area and high-density sensor arrangement, and if a sufficient number of temperature sensors are arranged, a multi-point temperature and pressure information collection system can also be constructed.
实施例2：Example 2:
本实施例与实施例1的不同点仅在于：本实用新型设置的双栅薄膜晶体管1的数量为三个，具体如图4所示，所述的基于双栅薄膜晶体管的多功能传感器，包括三个双栅薄膜晶体管1，其中一个的顶栅极11的表面设有极化的压电材料12，另两个的顶栅极11的表面设有非极化的压电材料12，然后在压电材料12的表面均设有金属材料14。也即是：本实用新型所述的基于双栅薄膜晶体管的多功能传感器设置有两个温度传感部分，单个压力传感部分。其具体的工作原理和制备方法与实施例1的一致，在此不再赘述。The difference between this embodiment and Embodiment 1 is that the number of double-gate thin film transistors 1 provided in the present invention is three, specifically as shown in FIG. 4 , the multifunctional sensor based on double-gate thin film transistors includes Three double-gate thin film transistors 1, one of which is provided with a polarized piezoelectric material 12 on the surface of the top gate 11, and the surface of the other two top gates 11 is provided with a non-polarized piezoelectric material 12, and then Metal materials 14 are provided on the surfaces of the piezoelectric materials 12 . That is to say: the multi-functional sensor based on the double-gate thin film transistor described in the present invention is provided with two temperature sensing parts and a single pressure sensing part. Its specific working principle and preparation method are consistent with those in Example 1, and will not be repeated here.
实施例3：Example 3:
本实施例与实施例1的不同点在于：物理场为磁场，其与双栅薄膜晶体管1的顶栅极11耦合形成磁传感器，与忆阻器结合使用，如图5所示。The difference between this embodiment and Embodiment 1 is that the physical field is a magnetic field, which is coupled with the top gate 11 of the double-gate thin film transistor 1 to form a magnetic sensor, which is used in combination with a memristor, as shown in FIG. 5 .
实施例4：Example 4:
本实施例与实施例1的不同点在于：物理场为光场，其与双栅薄膜晶体管1的顶栅极11耦合形成光电传感器，具体结构示意图如图6所示。其中顶栅极为透明导电层，光从顶部进入双栅薄膜晶体管1内部并被三维沟道吸收，进而影响输出电流，通过底栅极19对双栅薄膜晶体管1工作区进行选择，其中工作在亚阈值区的时候，输出电流随外场变化的幅度最大。The difference between this embodiment and Embodiment 1 is that the physical field is a light field, which is coupled with the top gate 11 of the double-gate thin film transistor 1 to form a photoelectric sensor. The specific structural diagram is shown in FIG. 6 . The top gate is a transparent conductive layer, and light enters the double-gate thin film transistor 1 from the top and is absorbed by the three-dimensional channel, thereby affecting the output current. The working area of the double-gate thin film transistor 1 is selected through the bottom gate 19, wherein the working area is In the threshold region, the amplitude of the output current changing with the external field is the largest.
本实用新型所述的基于双栅薄膜晶体管的多功能传感器的其它结构参见现有技术，在此不再赘述。For other structures of the dual-gate thin film transistor-based multifunctional sensor described in the present invention, please refer to the prior art, which will not be repeated here.
以上所述，仅是本实用新型的较佳实施例而已，并非对本实用新型作任何形式上的限制，故凡是未脱离本实用新型技术方案内容，依据本实用新型的技术实质对以上实施例所作的任何修改、等同变化与修饰,均仍属于本实用新型技术方案的范围内。The above is only a preferred embodiment of the utility model, and does not limit the utility model in any form, so if it does not depart from the technical solution content of the utility model, the above embodiments are made according to the technical essence of the utility model Any amendments, equivalent changes and modifications still belong to the scope of the technical solution of the present utility model.
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| CN109341880A (en) * | 2018-09-30 | 2019-02-15 | 中国科学院微电子研究所 | Annular temperature sensor |
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| CN109341880A (en) * | 2018-09-30 | 2019-02-15 | 中国科学院微电子研究所 | Annular temperature sensor |
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