CN207067332U - A kind of detection means for judging electric power electronic module failure - Google Patents

Abstract

It the utility model is related to a kind of detection means for judging electric power electronic module failure.The service datas such as electric current, voltage, shell temperature and spreader surface temperature by gathering electric power electronic module to be measured；According to the loss power and rate of temperature change for obtaining data calculating electric power electronic module, electric power electronic module case surface temperature rising curve is generated, corresponding temperature change time constant is extracted, for judging the failure of electric power electronic module.Its follow-up reasonable operation measures can be instructed to the failure diagnosis of electric power electronic module, be easy to extend the electric power electronic module service life for facing failure risk, improve converter system global reliability.

Description

A detection device for judging the failure of a power electronic module

technical field

The utility model relates to the field of power electronic power modules, in particular to a detection device for judging the failure of a power electronic module.

Background technique

Insulated gate bipolar transistor (Insulated gate bipolar transistor, IGBT) has developed rapidly since the 1980s, and has been widely used as a standard component in high-power energy conversion and transmission occasions, especially in rail traction, aerospace, electric vehicles, smart Fields such as power grid and new energy power generation play an indispensable role. With the promotion, development and maturity of its application, the working conditions and environments faced by IGBT modules are becoming more and more severe and complex, and the requirements for module power level and temperature tolerance are gradually increasing. However, a higher working temperature means a greater risk of failure, because the module is prone to aging and fatigue when subjected to high temperature and high stress for a long time, and the loss and heat transfer capacity of the module will change greatly. Therefore, the failure diagnosis and thermal management of IGBT modules have received a lot of attention in recent years.

At present, the research on failure diagnosis of IGBT modules is still in its infancy. Since heat is the most important cause of module failure, a lot of research has focused on the measurement and extraction of the junction temperature of the IGBT module, using thermal network models, thermosensitive electrical parameters and finite element analysis to calculate and predict the junction temperature of the IGBT chip, so that it can be found Abnormal junction temperature working condition and alarm. The junction temperature extraction technology can only warn of chip overheating failure damage, which belongs to transient protection, but it cannot detect whether the modules whose junction temperature is within the allowable operating range are aging, so they cannot protect the modules that are already in an aging state. Allowing the aging module to continue to withstand the same high current and high voltage as the normal module will inevitably accelerate its failure process, thereby threatening the work and operation of the overall converter system. Therefore, a comprehensive diagnostic method is urgently needed to diagnose the internal failure of the power electronic module when there is no obvious abnormality in the surface temperature, so as to facilitate the follow-up protection of the power electronic module facing the risk of failure.

Utility model content

In view of the above situation, the utility model proposes a detection device and method for judging the failure of a power electronic module. For two different failure mechanisms: one is the degradation or failure of the module’s electrical conductivity due to aging, fracture, delamination, and shedding of the internal metal parts of the module (including solder layers, bonding wires, etc.), which are manifested in module power loss and Changes in two aspects of response speed under specific thermal excitations; the second is the degradation of the module’s heat transfer performance caused by aging, fatigue, damage, etc. Changes in response speed.

The utility model collects operating data such as current, voltage, shell temperature and radiator surface temperature of the power electronic module to be tested; calculates the power loss and temperature change rate of the power electronic module according to the obtained data, and generates the surface temperature rise curve of the power electronic module shell , to extract the corresponding temperature change time constant, which is used to determine the failure of the power electronic module.

In order to achieve the above object, the utility model adopts the following technical solutions:

A detection device for determining failure of a power electronic module, comprising:

Test power supply, used to provide test power supply for testing;

V _GE detection unit, used to detect the gate-emitter voltage V _GE of the power electronic module to be tested;

A V _CE detection unit is used to detect the collector-emitter voltage V _CE of the power electronic module to be tested;

A shell temperature detection unit is used to detect the shell temperature of the power electronic module to be tested;

The radiator temperature detection unit is used to detect the radiator temperature of the power electronic module to be tested;

A current detection unit is used to detect the working current of the power electronic module to be tested;

A DC bus voltage detection unit, used to detect the voltage of the DC bus;

Data acquisition and analysis unit for analog/digital conversion, data storage, data processing and data transmission;

The power electronic module to be tested, as a test object, provides a detection port;

DC bus, used to connect the test power supply and the power electronic module to be tested;

The test power supply is connected to the current detection unit and connected to the negative pole of the power electronic module to be tested. The current detection unit is connected to the positive pole of the power electronic module to be tested. The current detection unit and the DC bus voltage detection unit respectively collect Measure the current and DC bus voltage of the power electronic module, the shell temperature detection unit collects the temperature directly under the substrate of the power electronic module to be tested, the radiator temperature detection unit collects the surface temperature of the supporting radiator of the power electronic module to be tested, and the The gate and emitter are connected to the power electronic module gate-emitter voltage V _GE detection unit, the collector and emitter are connected to the power electronic module collector-emitter voltage V _CE detection unit, and the data acquisition and analysis unit receives current detection Unit, DC bus voltage detection unit, shell temperature detection unit, radiator temperature detection unit, V _GE detection unit, V _CE detection unit signal output.

Preferably, the V _GE detection unit includes a voltage sensor, a shaping circuit and a signal output connected in sequence.

Preferably, the V _CE detection unit includes a voltage sensor, a shaping circuit and a signal output connected in sequence.

Preferably, the casing temperature detection unit includes a temperature sensor, a shaping circuit and a signal output connected in sequence.

Preferably, the radiator temperature detection unit includes a temperature sensor, a shaping circuit and a signal output connected in sequence.

Preferably, the current detection unit includes a current sensor, a shaping circuit and a signal output connected in sequence.

Preferably, the DC bus voltage detection unit includes a voltage sensor, a shaping circuit and a signal output connected in sequence.

Preferably, the data acquisition and analysis unit includes a sequentially connected communication unit, an analog/digital conversion unit, a memory and a processor;

The memory stores the value range of the power loss power of the power electronic module under different failure conditions; and stores the value range of the time constant of the surface temperature rise curve of the power electronic module shell under different failure conditions;

The processor receives the current, voltage, case temperature and radiator surface temperature data of the power electronic module to be tested from the analog/digital conversion unit, calculates the power loss of the power electronic module to be tested, and generates the surface temperature rise curve of the power electronic module to be tested , and extract the corresponding time constant, according to the power loss of the power electronic module to be tested and the time constant of the temperature rise curve, compare the memory look-up table to judge the failure of the module.

Compared with the prior art, the utility model has the following prominent substantive features and significant advantages:

The detection device in the utility model can discriminate the internal heat transfer medium and conduction medium of the power electronic module whose junction temperature is in the allowable operating range by calculating the power loss of the power electronic module to be tested and extracting the time constant of the temperature rise curve of the shell surface. Whether the medium has aged, because when the internal interface material of the power electronic module ages and fails due to thermal stress, the response time of the power electronic module under specific thermal excitation will be prolonged and the power loss will also change; for the power electronic module The failure diagnosis can guide its follow-up reasonable operation measures, which is convenient to prolong the service life of power electronic modules facing the risk of failure and improve the overall reliability of the converter system.

Description of drawings

Figure 1 Schematic diagram of the detection device structure.

Figure 2 Schematic diagram of the power electronic module unit to be tested.

Fig. 3 Schematic diagram of the gate-emitter voltage V _GE detection unit of the power electronic module.

Fig. 4 Schematic diagram of the collector-emitter voltage V _CE detection unit of the power electronic module.

Fig. 5 Schematic diagram of the surface case temperature detection unit of the power electronic module.

Fig. 6 Schematic diagram of the heat sink surface temperature detection unit for the power electronics module.

Figure 7 is a schematic diagram of the current detection unit.

Figure 8 is a schematic diagram of a DC bus voltage detection unit.

Figure 9 is a schematic diagram of the data acquisition and analysis unit.

Figure 10 is a schematic diagram of the surface temperature rise curve of the power electronic module housing.

Detailed ways

Below in conjunction with accompanying drawing, specific embodiment of the utility model is described further.

As shown in Figure 1, a detection device for determining the failure of a power electronic module includes:

Test power supply 1, used to provide test power for testing;

The V _GE detection unit 2 is used to detect the gate-emitter voltage V _GE of the power electronic module 9 to be tested;

The V _CE detection unit 3 is used to detect the collector-emitter voltage V _CE of the power electronic module 9 to be tested;

The shell temperature detection unit 4 is used to detect the shell temperature of the power electronic module 9 to be tested;

Radiator temperature detection unit 5, used to detect the temperature of the radiator of the power electronic module 9 to be tested;

The current detection unit 6 is used to detect the operating current of the power electronic module 9 to be tested;

DC bus voltage detection unit 7, used to detect the voltage of DC bus 10;

Data acquisition and analysis unit 8, used for analog/digital conversion, data storage, data processing and data transmission;

The power electronic module 9 to be tested, as a test object, provides a detection port;

The DC bus 10 is used to connect the test power supply 1 and the power electronic module 9 to be tested;

The test power supply 1 is connected to the current detection unit 6 and connected to the negative pole of the power electronic module 9 to be tested. The current detection unit 6 is connected to the positive pole of the power electronic module 9 to be tested. The current detection unit 6 and the DC bus voltage detection The unit 7 respectively collects the current flowing through the power electronic module 9 to be tested and the voltage of the DC bus 10 , the case temperature detection unit 4 collects the temperature directly under the substrate of the power electronic module 9 to be tested, and the radiator temperature detection unit 5 collects the temperature of the power electronic module 9 to be tested The surface temperature of the matching radiator, the grid and emitter of the power electronic module 9 to be tested are connected to the grid-emitter voltage V _GE detection unit 2 of the power electronics module, and the collector and emitter are connected to the collector-emitter of the power electronics module Pole voltage V _CE detection unit 3, data acquisition and analysis unit 8 receiving current detection unit 6, DC bus voltage detection unit 7, shell temperature detection unit 4, radiator temperature detection unit 5, V _GE detection unit 2, V _CE detection unit 3 signal outputs.

FIG. 2 is a schematic diagram of the power electronic module 9 to be tested. The driving unit is responsible for applying a gate drive signal to the power electronic module, and the power electronic module to be tested supplies power to the test load.

As shown in FIG. 3 , the V _GE detection unit 2 includes a voltage sensor 2-1, a shaping circuit 2-2 and a signal output 2-3 connected in sequence. The voltage sensor 2-1 in the V _GE detection unit 2 is connected between the gate and the emitter of the power electronic module 9 to be tested, collects V _GE data in real time, and outputs the signal after conditioning by the shaping circuit 2-2.

As shown in FIG. 4, the V _CE detection unit 3 includes a voltage sensor 3-1, a shaping circuit 3-2 and a signal output 3-3 connected in sequence. The voltage sensor 3-1 in the V _CE detection unit 3 is connected between the collector and the emitter of the power electronic module 9 to be tested, collects V _CE data in real time, and outputs the signal after conditioning by the shaping circuit 3-2.

As shown in FIG. 5 , the casing temperature detection unit 4 includes a temperature sensor 4-1, a shaping circuit 4-2 and a signal output 4-3 connected in sequence. The temperature sensor 4-1 is placed directly under the base plate of the power electronic module 9 to be tested, collects the module shell temperature data during operation, and is conditioned by the shaping circuit 4-2 to output an electrical signal that has practical significance and can be processed.

As shown in FIG. 6, the radiator temperature detection unit 5 includes a temperature sensor 5-1, a shaping circuit 5-2 and a signal output 5-3 connected in sequence. The temperature sensor 5-1 is placed in the water-cooling liquid of the module radiator or just below the shell of the air-cooling system, collects the temperature data of the radiator during operation, and adjusts it into an electrical signal with practical significance and can be processed by the shaping circuit 5-2 output.

As shown in FIG. 7 , the current detection unit 6 includes a current sensor 6-1, a shaping circuit 6-2 and a signal output 6-3 connected in sequence. The current sensor 6-1 collects the working current of the power electronic module 9 to be tested, and outputs the signal after being adjusted by the shaping circuit 6-2.

As shown in FIG. 8, the DC bus voltage detection unit 7 includes a voltage sensor 7-1, a shaping circuit 7-2 and a signal output 7-3 connected in sequence. The voltage sensor 7-1 is responsible for collecting the voltage of the DC bus 10, and outputs the signal after being conditioned by the shaping circuit 7-2.

As shown in FIG. 9, the data acquisition and analysis unit 8 includes a communication unit 8-1, an analog/digital conversion unit 8-2, a memory 8-3 and a processor 8-4 connected in sequence. The data acquisition and analysis unit 8 receives the signal output from the current detection unit 6, the DC bus voltage detection unit 7, the case temperature detection unit 4, the radiator temperature detection unit 5, the V _GE detection unit 2, and the V _CE detection unit 3. The collected signal is sent to the processor 8-4 through the analog/digital conversion unit 8-2, and the processor 8-4 processes and analyzes the data, and makes a judgment on the failure of the power electronic module 9 to be tested.

The detection method for determining the failure of a power electronic module provided in this embodiment includes the following steps:

S1, the test power supply 1 supplies power to the power electronic module 9 to be tested, and simultaneously drives the power electronic module 9 to be tested;

S2, the data acquisition and analysis unit 8 obtains the current detection unit 6, the DC bus voltage detection unit 7, the shell temperature detection unit 4, the radiator temperature detection unit 5, the V _GE detection unit 2, and the V _CE detection unit 3. The operating data of the obtained current, voltage, case temperature and radiator surface temperature are sent to the processor 8-4;

S3, the processor 8-4 calculates the power loss of the power electronic module 9 to be tested according to the collected data, generates a rising curve of the surface temperature of the power electronic module 9 to be tested, and calculates the surface temperature of the power electronic module 9 to be tested at a fixed temperature. rate of change within the time interval, and extract the time constant of the temperature rise curve;

S4, the processor 8-4 checks the memory 8-3 according to the calculated module power loss and time constant, and judges the failure condition of the power electronic module 9 to be tested;

S5, repeatedly execute S2 to S4, and cyclically detect the failure of the power electronic module 9 .

Figure 10 is an example of the temperature rise curve of the outer shell of the power electronic module within a fixed time interval. If no aging failure occurs inside the power electronic module, the rate of change of the temperature rise curve of the shell surface , that is, the time constant, will be kept within a reasonable range; if aging failure occurs inside the power electronic module, the heat transfer capacity of the medium between the power chip and the external environment of the module will degrade, and the change rate of the temperature rise curve of the shell surface will be compared with the normal situation will increase, and the time constant will also increase; if a transient overcurrent impact occurs, the surface temperature of the power electronics module casing will rise rapidly and exceed the maximum allowable operating temperature. Therefore, by analyzing the change law of the surface temperature rise curve of the power electronic module shell, it can be judged whether a failure occurs inside the module.

If the internal metal parts of the module, such as solder layers and bonding wires, age, break, or fall off, resulting in degradation or failure of the module's electrical conductivity, the internal resistance of the module will increase and the power loss will change. At the same time, the fatigue, void, delamination and other reasons of the solder layer will also cause the decline of the heat transfer performance of the module, which is reflected in the increase of the time constant on the temperature rise curve of the shell surface. If the heat transfer failure of the power electronic module is not diagnosed and it is allowed to work in a poor heat dissipation environment for a long time, it is easy to cause the chip to be damaged due to overheating and accelerate the overall aging process of the module.

If it is a non-metallic part inside the module, such as filling material, insulating ceramic substrate, etc., the degradation of the heat transfer performance of the module due to aging, fatigue, damage, etc. is also reflected in the time of the temperature rise curve of the surface of the power electronic module shell under specific thermal excitation The constant increases.

Therefore, judging whether the power loss of the power module and the variation law of the temperature rise curve of the casing surface are within a reasonable range, it is possible to judge whether the power electronic module under test is facing failure.

Claims (8)

1. A detection device for judging failure of a power electronic module, characterized in that the detection device comprises: Test power supply (1), used to provide test power for testing; A V _GE detection unit (2), used for detecting the gate-emitter voltage V _GE of the power electronic module (9) to be tested; A V _CE detection unit (3), used to detect the collector-emitter voltage V _CE of the power electronic module (9) to be tested; A shell temperature detection unit (4), used to detect the shell temperature of the power electronic module (9) to be tested; Radiator temperature detection unit (5), used to detect the temperature of the radiator of the power electronic module (9) to be tested; A current detection unit (6), used to detect the working current of the power electronic module (9) to be tested; A DC bus voltage detection unit (7), used to detect the voltage of the DC bus (10); Data acquisition and analysis unit (8), used for analog/digital conversion, data storage, data processing and data transmission; The power electronic module (9) to be tested, as a test object, provides a detection port; DC busbar (10), used to connect the test power supply (1) and the power electronic module (9) to be tested; The test power supply (1) is connected to the current detection unit (6) and connected to the negative pole of the power electronic module (9) to be tested, and the current detection unit (6) is connected to the positive pole of the power electronic module (9) to be tested , the current detection unit (6) and the DC bus voltage detection unit (7) respectively collect the current flowing through the power electronic module (9) to be tested and the voltage of the DC bus (10), and the case temperature detection unit (4) collects the voltage of the power electronic module to be tested (4). The temperature directly under the substrate of the module (9), the heat sink temperature detection unit (5) collects the surface temperature of the supporting heat sink of the power electronic module (9) to be tested, and the electric power is connected between the gate and the emitter of the power electronic module (9) to be tested Electronic module gate-emitter voltage V _GE detection unit (2), collector and emitter connected to power electronic module collector-emitter voltage V _CE detection unit (3), data acquisition and analysis unit (8) receiving current Signal output of detection unit (6), DC bus voltage detection unit (7), case temperature detection unit (4), radiator temperature detection unit (5), V _GE detection unit (2), V _CE detection unit (3) . 2. The detection device for determining the failure of power electronic modules according to claim 1, characterized in that, the V _GE detection unit (2) includes a voltage sensor (2-1) connected in sequence, a shaping circuit (2-2) And signal output (2-3). 3. The detection device for determining the failure of power electronic modules according to claim 1, characterized in that, the V _CE detection unit (3) includes a voltage sensor (3-1) connected in sequence, a shaping circuit (3-2) And signal output (3-3). 4. The detection device for judging the failure of power electronic modules according to claim 1, characterized in that the casing temperature detection unit (4) includes a temperature sensor (4-1) connected in sequence, a shaping circuit (4-2) And signal output (4-3). 5. The detection device for judging the failure of power electronic modules according to claim 1, characterized in that the radiator temperature detection unit (5) includes temperature sensors (5-1) connected in sequence, shaping circuits (5-2 ) and signal output (5-3). 6. The detection device for judging the failure of power electronic modules according to claim 1, characterized in that, the current detection unit (6) includes a current sensor (6-1), a shaping circuit (6-2) and a current sensor connected in sequence Signal output (6-3). 7. The detection device for determining the failure of power electronic modules according to claim 1, characterized in that the DC bus voltage detection unit (7) includes a voltage sensor (7-1) connected in sequence, a shaping circuit (7-2 ) and signal output (7-3). 8. The detection device for judging the failure of power electronic modules according to claim 1, characterized in that the data acquisition and analysis unit (8) includes a communication unit (8-1) connected in sequence, an analog/digital conversion unit ( 8-2), memory (8-3) and processor (8-4); The memory (8-3) stores the value range of the power loss power of the power electronic module under different failure conditions; and stores the value range of the time constant of the surface temperature rise curve of the power electronic module shell under different failure conditions; The processor (8-4) receives the current, voltage, shell temperature and radiator surface temperature data of the power electronic module to be tested returned by the analog/digital conversion unit (8-2), calculates the power loss of the power electronic module to be tested, and generates The temperature rise curve of the shell surface of the power electronic module to be tested is extracted, and the corresponding time constant is extracted. According to the power loss of the power electronic module to be tested and the time constant of the temperature rise curve, the failure of the module is judged according to the table lookup of the memory (8-3).