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CN207042661U - Laminar flow high-intensity magnetic field part flow arrangement - Google Patents

Laminar flow high-intensity magnetic field part flow arrangement Download PDF

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Publication number
CN207042661U
CN207042661U CN201721262557.8U CN201721262557U CN207042661U CN 207042661 U CN207042661 U CN 207042661U CN 201721262557 U CN201721262557 U CN 201721262557U CN 207042661 U CN207042661 U CN 207042661U
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China
Prior art keywords
flow
magnetic field
guiding channel
ion
poles
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CN201721262557.8U
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Chinese (zh)
Inventor
刘平
孙金龙
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Beijing Purkinje General Instrument Co Ltd
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Beijing Purkinje General Instrument Co Ltd
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Priority to CN201721262557.8U priority Critical patent/CN207042661U/en
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Abstract

The utility model provides a kind of laminar flow high-intensity magnetic field part flow arrangement, belongs to field shunting engineering device technique field.Flow-guiding channel described in the utility model is arranged between the N poles of magnet and S poles, the horizontal direction of flow-guiding channel is flat structure, the vertical direction of flow-guiding channel is sector structure, the fan handle direction of flow-guiding channel is ion entrance, the fan edge direction of flow-guiding channel is ion outlet, ion outlet is flat construction and is provided with some flow-guiding channels, is magnetic field in the flow-guiding channel between N poles and S poles, and magnetic field forms ion shunting zone.The utility model utilizes micro-fluidic laminar flow characteristics, and the shunting of ion and polar molecule is realized using high-intensity magnetic field.The particle or polar molecule of different charge-mass ratios can be shunted, and by flow-guiding structure, the sample of different charge-mass ratios is introduced different treatment channels.Regulation magnetic field intensity can change the SHUNT state of different charge-mass ratios, meet the process demand of various samples.

Description

Laminar flow high-intensity magnetic field part flow arrangement
Technical field
A kind of laminar flow high-intensity magnetic field part flow arrangement is the utility model is related to, belongs to field shunting engineering device technique field.
Background technology
In micro-fluidic chip, laminar condition is presented in fluid sample, and the particulate of different conditions is shunted, can become more Easily.High-intensity magnetic field can be used to the particle in micro-fluidic chip or polarity point using Hall effect of the charged particle in magnetic field Son is effectively shunted.However, it is still highly difficult thing to carry out separation to different ion or polar molecule at present, need Want complicated and huge laboratory equipment.
The content of the invention
The purpose of this utility model be in order to solve the above-mentioned problems of the prior art, i.e., at present to different ions or It is still highly difficult thing, it is necessary to complicated and huge laboratory equipment that polar molecule, which carries out separation,.And then provide a kind of layer Flow high-intensity magnetic field part flow arrangement.
The purpose of this utility model is achieved through the following technical solutions:
A kind of laminar flow high-intensity magnetic field part flow arrangement, including:Flow-guiding channel and magnet, the flow-guiding channel are arranged on the N of magnet Between pole and S poles, the horizontal direction of flow-guiding channel is flat structure, and the vertical direction of flow-guiding channel is sector structure, and water conservancy diversion leads to The fan handle direction in road is ion entrance, and the fan edge direction of flow-guiding channel is ion outlet, and ion outlet is flat construction and is provided with Some flow-guiding channels, be magnetic field in flow-guiding channel between N poles and S poles, magnetic field formation ion shunting zone.
Ion entrance end of the present utility model is connected with the port of export of ionization device, the rear portion at ion entrance end and ion Shunting zone is connected, and ion shunting zone is plane sector, different under magnetic fields when ion and polar molecule pass through the region The ion and molecule of charge-mass ratio are along sector diffuence.Apply magnetic field along perpendicular to ion shunting zone in-plane, due to charged particle Athletic meeting is acted on by Lorentz force in magnetic field, and ion and the polar molecule direction of motion under magnetic fields can change Become, the degree of change is determined by charge-mass ratio, and tapping condition can also be changed by changing magnetic field intensity.Sample after being shunted by ion shunting zone Product are exported by flow-guiding channel, and the sample of different charge-mass ratios enters each self-corresponding passage, reaches the purpose of shunting.
Brief description of the drawings
Fig. 1 is the overall structure diagram of the utility model laminar flow high-intensity magnetic field part flow arrangement.
Fig. 2 is the planar structure schematic diagram of flow-guiding channel in laminar flow high-intensity magnetic field part flow arrangement.
Reference in figure, 1 is flow-guiding channel, and 2 be magnet, and 3 be magnetic field, and 4 be ion shunting zone, and 5 be ion entrance, 6 be ion outlet.
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing:The present embodiment is with the utility model skill Implemented under premised on art scheme, give detailed embodiment, but the scope of protection of the utility model be not limited to it is following Embodiment.
As depicted in figs. 1 and 2, a kind of laminar flow high-intensity magnetic field part flow arrangement involved by the present embodiment, including:Flow-guiding channel 1 With magnet 2, the flow-guiding channel 1 is arranged between the N poles of magnet 2 and S poles, and the horizontal direction of flow-guiding channel 1 is flat structure, The vertical direction of flow-guiding channel 1 is sector structure, and the fan handle direction of flow-guiding channel 1 is ion entrance 5, the fan edge of flow-guiding channel 1 Direction is ion outlet 6, and ion outlet 6 is flat construction and is provided with some flow-guiding channels, the flow-guiding channel 1 between N poles and S poles Interior is magnetic field 3, and magnetic field 3 forms ion shunting zone 4.
After the laminar flow high-intensity magnetic field part flow arrangement of the present embodiment, the ion and polar molecule of different charge-mass ratios produce sample Shunting.Magnetic field in shunting zone with being applied with intensity in the plane vertical direction of shunting zone and direction can be adjusted.Output port It is made up of many flow-guiding channels, the sample of the different charge-mass ratios after shunting can be exported respectively and carry out respective alignment processing.
Described above, only the preferable embodiment of the utility model, these embodiments are all based on this Different implementations under utility model general idea, and the scope of protection of the utility model is not limited thereto, it is any ripe Those skilled in the art are known in the technical scope that the utility model discloses, the change or replacement that can be readily occurred in, all It should cover within the scope of protection of the utility model.Therefore, the scope of protection of the utility model should be with claims Protection domain is defined.

Claims (1)

1. a kind of laminar flow high-intensity magnetic field part flow arrangement, including:Flow-guiding channel (1) and magnet (2), the flow-guiding channel (1) are arranged on Between the N poles and S poles of magnet (2), it is characterised in that the horizontal direction of flow-guiding channel (1) is flat structure, flow-guiding channel (1) Vertical direction be sector structure, the fan handle direction of flow-guiding channel (1) is ion entrance (5), the fan edge direction of flow-guiding channel (1) For ion outlet (6), ion outlet (6) is flat construction and is provided with some flow-guiding channels, the flow-guiding channel between N poles and S poles (1) it is magnetic field (3) that magnetic field (3) form ion shunting zone (4) in.
CN201721262557.8U 2017-09-28 2017-09-28 Laminar flow high-intensity magnetic field part flow arrangement Active CN207042661U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201721262557.8U CN207042661U (en) 2017-09-28 2017-09-28 Laminar flow high-intensity magnetic field part flow arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201721262557.8U CN207042661U (en) 2017-09-28 2017-09-28 Laminar flow high-intensity magnetic field part flow arrangement

Publications (1)

Publication Number Publication Date
CN207042661U true CN207042661U (en) 2018-02-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201721262557.8U Active CN207042661U (en) 2017-09-28 2017-09-28 Laminar flow high-intensity magnetic field part flow arrangement

Country Status (1)

Country Link
CN (1) CN207042661U (en)

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