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CN206877967U - Process kit and plasma chamber - Google Patents

Process kit and plasma chamber Download PDF

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Publication number
CN206877967U
CN206877967U CN201720205937.1U CN201720205937U CN206877967U CN 206877967 U CN206877967 U CN 206877967U CN 201720205937 U CN201720205937 U CN 201720205937U CN 206877967 U CN206877967 U CN 206877967U
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China
Prior art keywords
inner ring
thermo
process kit
contact pad
ring
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Active
Application number
CN201720205937.1U
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Chinese (zh)
Inventor
O·茹贝尔
J·A·肯尼
S·斯利尼瓦萨恩
J·罗杰斯
R·丁德萨
V·S·阿楚沙拉曼
O·鲁赫尔
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

Embodiment described herein relates generally to be adapted to the process kit and plasma chamber used in semiconductor processing chamber, and compared with conventional treatment external member, the process kit reduces edge effect and widening treatment window with single edge ring.The process kit generally comprises the edge ring for being disposed adjacent to and being centered around the semiconductor substrate periphery in plasma chamber.The size in the gap between the substrate and the edge ring is less than about 1000 μm, and the difference in height between the substrate and the edge ring is less than about 300 μm of (+/).The resistivity of the ring is less than about 50Ohm cm.

Description

Process kit and plasma chamber
Technical field
Embodiment of the present disclosure relates generally to semiconductor processes, and relates more specifically to one kind and be used for semiconductor processes Process kit in chamber.
Background technology
Various semiconductor fabrication process, the etching or change of such as plasmaassisted are performed in plasma process chamber Learn vapour deposition.Substrate support supporting substrate at the processing position in semiconductor processing chamber.In the semiconductor processes The heating region for including one or more processing gas is maintained in chamber, with to the substrate being arranged on the substrate support Perform semiconductor fabrication process.
Plasma sheath is the thin region of the highfield formed by space charge, the plasma sheath by plasma with Material boundary separates.During plasma etching, plasma sheath be formed at plasma and be just etched substrate, partly lead Every other part (including the institute contacted with the heating region of the wall of body processing chamber housing and semiconductor processing chamber State process kit) between.
The thickness (d) of plasma sheath is represented by equation 1 as follows：
D=(2/3) (ε/i)1/2(2e/m)1/4(VP-VDC)3/4
(equation 1)
In equation 1, " i " is ion current density, and " ε " is permittivity of vacuum, and " e " is elementary charge, and " m " is ion matter Amount, and " VP" it is plasma potential.As illustrated, the thickness of plasma sheath can be by adjusting plasma parameter (i.e. Source power and substrate bias power) increased or decrease, the source power and substrate bias power influence gas current " i " and " V respectivelyDC”。 Caused ion accelerates along the track perpendicular to the plasma sheath in plasma sheath in heating region.Because Plasma sheath is generally parallel to the plane of substrate, so the ion through the plasma sheath impacts generally in vertical direction The substrate.On the contrary, the disturbance (such as being caused by the presence of the process kit positioned at substrate edges) of plasma sheath shape Partly change ionic flux so that substrate is impacted through the ion of plasma sheath along non-vertical direction, so as to produce etching Inhomogeneities.
Therefore, there is a need in the art for improved process kit.
Utility model content
Disclose a kind of process kit for being adapted to use in semiconductor processing chamber.In one embodiment, processing set Part includes edge ring.The edge ring includes inner ring and outer rings.The inner ring includes having first table relative with second surface The radio frequency body in face.The radio frequency body has the resistivity less than about 50Ohm-cm.The inner ring is further wrapped Include the recess along the internal diameter setting of the inner ring.The recess, which has to rise, is less than about 1200 μm of vertical component and about 1300 μm and about 2500 μm between the horizontal component that extends.The outer shroud is couple to the inner ring and around the periphery of the inner ring. The outer shroud includes the quartz body with threeth surface relative with the 4th surface.
In another embodiment, the plasma chamber for performing semiconductor processes to substrate is disclosed.The grade from Daughter chamber includes substrate support and process kit.The process kit be suitable for adjacent substrates support component use and It is couple to the flange of the substrate support.The process kit includes edge ring and conductive member.The edge ring includes The recess set along the internal diameter of the edge ring.The recess, which has to rise, is less than about 1200 μm of vertical component and about 1300 μm and about 2500 μm between the horizontal component that extends.In addition, the conductive member is couple to the edge ring.
In another embodiment, the process kit for being adapted to use in the processing chamber includes edge ring, at least one heat connects Touch pad and conductive member.The edge ring is arranged on processing around the periphery of substrate support, the substrate support In chamber.The edge ring includes inner ring and outer rings.The inner ring be disposed adjacent to the substrate support and comprising Non-metallic conducting material.The inner ring further comprises the recess along the internal diameter setting of the inner ring, wherein the recess has Rise the vertical component less than about 1200 μm and the horizontal component extended between about 1300 μm and about 2500 μm.The outer shroud coupling It is connected to the inner ring and around the periphery of the inner ring.The outer shroud includes quartz material.At least one thermo-contact pad It is couple to the inner ring and is arranged in the groove being formed in the inner ring.In addition, the conductive member is couple to outside described Ring.
Brief description of the drawings
Therefore, in order to mode used in the features described above structure of the disclosure is understood in detail, it may be referred to each embodiment party Formula more specifically describes the disclosure summarized above, and some in the embodiment are illustrated in accompanying drawing.However, should Work as attention, accompanying drawing only shows the illustrative embodiments of the disclosure, and is therefore not construed as limiting the scope of the present disclosure, and this It is open to allow other equivalent implementations.
Fig. 1 shows the schematic cross sectional view of the plasma process chamber according to embodiment described herein.
Fig. 2A and Fig. 2 B respectively illustrate the schematic cross sectional view of Fig. 1 process kit and schematic amplification profile.
Fig. 3 shows the schematic plan of Fig. 1 process kit.
Fig. 4 A and Fig. 4 B show the nitride etch rate that is performed relative to substrate bias power using high source power and relative In the schematic table for the nitride etch rate that substrate bias power is performed using low source power.
In order to make it easy to understand, in the case of as far as possible, to share in sign picture using identical reference identical Element.It is expected that the element and feature of embodiment can be beneficially incorporated in other embodiment and needn't elaborate any further.
Embodiment
Embodiment described herein relates generally to be adapted to the process kit used in semiconductor processing chamber, with conventional place Reason external member is compared, and the process kit reduces edge effect with single edge ring.The process kit, which generally comprises, is arranged to adjacent The edge ring on the periphery for the semiconductor substrate for being bordering on and being centered around in plasma chamber.The substrate and the edge ring it Between gap size be less than about 1000 μm, and the difference in height between the substrate and the edge ring is less than about (+/-) 300 μ m.The resistivity of the ring is less than about 50Ohm-cm.
As described herein, " substrate " or " substrate surface " refers generally to perform it any substrate surface of processing.For example, root According to application, substrate surface can include silicon, silica, doped silicon, SiGe, germanium, GaAs, glass, sapphire and any other Material (such as metal, metal nitride, metal alloy and other conductive or semiconductive materials).Substrate or substrate surface can also wrap Dielectric substance containing such as silica, silicon nitride, organosilicate and carbon doped silicon oxide or nitride material.Term " substrate " can further comprise term " chip ".Substrate is not limited to any particular size or shape in itself.While characterized as Embodiment is carried out referring generally to circular substrate, but can use other shapes according to implementations described herein, such as Polygon, square, rectangle, bending or other non-circular workpieces.
To the general description of processing chamber housing
Fig. 1 shows the signal of the one embodiment for the semiconductor processing chamber 100 that present embodiment can be used wherein Property profile.Shown semiconductor processing chamber 100 is suitable for etching or chemical vapor deposition (chemical vapor Deposition, CVD) magnetic enhancement plasma chamber.
Processing chamber housing 100 includes cylindrical side wall 102, circular bottom wall 104 and circular top wall 106.Anode electrode 108 is pacified Mounted in the bottom of roof 106 and can electrical ground.Anode electrode 108 can perforated to serve as gas access, processing gas passes through The gas access enters semiconductor processing chamber 100.The wall 102 of semiconductor processing chamber 100, wall 104 and wall 106 it is every One is all metal, although some or all of wall 102, wall 104, wall 106 may include semiconductor or dielectric substance.It is not electricity Any wall 102, wall 104, the wall 106 of medium can be electrically grounded and serve as the part of anode electrode 108.
Substrate support 120 is arranged in processing chamber housing 100.Substrate support 120 has towards anode electrode 108 Substantially flat preceding surface 140.The preceding surface 140 of substrate support 120 supporting substrate 110 during processing.Substrate Support component 120 can be supported by the bottom wall 104 of semiconductor processing chamber 100.Substrate support 120 supports with metal substrate Main body 122, the metal substrate supportive body 122 serve as cathode electrode described below, but if being arranged on substrate support group Another electrode in part 120 is configured to operate as cathode electrode and operated, then substrate supportive body 122 need not be metal.
Substrate 110 can be fixed on substrate support 120 in by mechanical clamp, vacuum, gravity or by electrostatic force Appropriate location.In one embodiment, substrate support 120 includes electrostatic chuck 126, can encourage electrostatic chuck 126 with Substrate 110 is firmly fixed against the preceding surface 140 of substrate support 120 during processing.
Electrostatic chuck 126 includes at least one clamping electrode 124 surrounded by dielectric substance 142.Electrostatic chuck 126 Dielectric substance 142 clamping electrode 124 is electrically insulated with substrate 110 and with metal substrate supportive body 122 so that The electrostatic attraction to substrate 110 can be produced when clamping electrode 124 is powered.For operating the power of electrostatic chuck 126 by electricity Source 128 is supplied.
The diameter of the part 144 of the electrostatic chuck 126 of supporting substrate 110 is smaller than diameter (that is, the substrate of substrate 110 110 slightly protrude from the periphery of the part 144 of the electrostatic chuck 126 of supporting substrate 110).
Substrate support 120 further comprises the substrate supportive body 122 for being arranged on the lower section of electrostatic chuck 126.Substrate Supportive body 122 can be cylinder form and can be made up of the metal material of such as anodized aluminum.Substrate supportive body 122 Promote electrostatic chuck 126 being fastened to substrate supportive body to provide flange 146 with the radius bigger than electrostatic chuck 126 122。
Gas is discharged and by the total gas pressure in chamber by vavuum pump (not shown) from processing chamber housing by exhaust manifold 130 Sufficiently low degree is maintained to promote the formation of plasma, such as in the range of about 10 millitorrs to 20 supports, wherein in institute The pressure at the lower limit end and upper limit end of stating scope is more suitable for etching process and CVD processing respectively.
During the processing of substrate 110, plasma is maintained and is limited between substrate 110 and anode electrode 108 Processing chamber housing 100 region 148 in.The plasma by by processing gas mixture excite to plasmoid come Formed.The plasma can produce (in-situ plasma) in processing chamber housing, or be produced in another chamber (long-range etc. Plasma source) and be pumped into the processing chamber housing.
Radio frequency (radio frequency, RF) power supply 132 by one or more series coupling capacitors 134 be connected to One or more in lower chambers part：Substrate supportive body 122, clamping electrode 124 or supplementary electrode (such as gauze), it is described attached Power-up pole is embedded in electrostatic chuck 126.Any one of these components is connected to the RF power supply to collectively constitute the place Manage the cathode electrode of chamber.In one embodiment, substrate supportive body 122 is connected to RF power supply 132 to serve as negative electrode electricity Pole.
RF power supply 132 provides RF voltages between cathode electrode and ground connection anode electrode 108, and its help supplies to maintain Exciting power needed for plasma.Relative to anode electrode and plasma, the RF voltages of negative electrode are applied to also in negative electrode electricity Negative DC biass when extremely above producing, this makes the processing gas composition of ionization be accelerated towards cathode electrode, so as to promote to substrate 110 processing.
In an exemplary embodiment, the substrate 110 supported by substrate support 120 can be 200mm, 300 mm Or 450mm silicon wafer.Standard 200mm substrates typically have about 725 μm of thickness.Standard 300mm substrates typically have about 775 μm of thickness.Standard 450mm substrates typically have about 925 μm of thickness.
General procedure external member
Fig. 2A shows the schematic cross section for the process kit 200 for being adapted to be used in Fig. 1 semiconductor processing chamber 100 Figure.Fig. 3 shows the schematic plan of Fig. 1 process kit 200.Referring to both Fig. 2A and Fig. 3, process kit 200 is set To improve corona treatment and protect chamber part during processing in semiconductor processing chamber 100.In some embodiments In, process kit 200 can be couple to substrate support 120 and/or be supported by substrate support 120 or can be adjacent to base Plate support component 120 uses.Process kit 200 extends and/or is disposed adjacent to substrate further around the periphery of substrate 110 110。
Process kit 200 includes edge ring 202.Edge ring 202 includes inner ring 204 and outer shroud 206.However, it is anticipated that , in certain embodiments, inner ring 204 and outer shroud 206 can form single ring.Edge ring 202 is around substrate support 120 Periphery 150.Edge ring 202 includes the recess 210 set along the internal diameter 212 of edge ring 202 and/or inner ring 204.
Inner ring 204 is disposed adjacent to substrate support 120.Inner ring 204 includes first surface 214 and second surface 216, wherein second surface 216 is relative with first surface 214.Inner ring 204 is by nonmetallic and/or with being less than about 100 Ohm-cm The conductive material manufacture of the resistivity of (for example, being less than about 50Ohm-cm).Inner ring 204 can be by carbofrax material, silicon materials, non-gold Belong to material, and/or their mixture and combination manufacture.
Inner ring 204 further comprises recess 210.In certain embodiments, recess 210 is in the internal diameter 212 of inner ring 204 Formed.Recess 210 includes the vertical component represented by the reference arrow " V " in Fig. 2A.Vertical component V, which can have, is less than about 1500 The rising of μm (for example, less than about 1200 μm).Recess 210 further comprises the level represented by the reference arrow " H " in Fig. 2A Component.Horizontal component H can have between about 1000 μm and about 3000 μm extension (for example, about 1300 μm and about 2500 μm it Between, such as about 1800 μm) length (run).Recess 210 supporting substrate 110 and/or can prevent substrate 110 from transporting during processing It is dynamic.
Fig. 2 B are the amplification profile of the recess 210 of the edge ring 202 shown in Fig. 2A.In order to not disturb in substrate 110 The plasma sheath of edge, the size of process kit 200 can be precisely defined in close tolerance.Thus, the He of substrate 110 The size of gap E between the inner ring 204 of edge ring 202 is less than about 1000 μm, for example, less than about 850 μm, such as less than about 800μm.In addition, the height F of the inner ring 204 of edge ring 202 is chosen into the top surface 240 for causing substrate 110 and inner ring 204 First surface 214 is approximately in identical plane.In certain embodiments, about it is included in same level by substrate Vertical range between the plane of 110 formation of top surface 240 and the plane formed by the first surface 214 of inner ring 204 is away from that This is about in 400 μm of (+/-), for example, away from each other about in 300 μm of (+/-), in such as 200 μm away from (+/-) each other.
Fig. 2A and Fig. 3 are returned to, outer shroud 206 is couple to inner ring 204, and can surround the periphery 218 of inner ring 204.One In a little embodiments, outer shroud 206 can support inner ring 204 by the support ledge 220 that the inner rim 222 along outer shroud is formed.It is in addition, outer Ring 206 includes the 3rd surface 224 and the 4th surface 226.3rd surface 224 can be relative with the 4th surface 226.Outer shroud 206 can wrap Containing quartz material.
Process kit 200 can further comprise at least one thermo-contact pad 208.In certain embodiments, pad 208 is thermally contacted Can be optional.Although the part of a thermo-contact pad 208 is illustrate only in fig. 2, it is contemplated that can be used multiple Pad 208 is thermally contacted, as shown in Figure 2 B.Thermally contacting pad 208 can be by silicones (polymer) material manufacture.In addition, thermo-contact pad 208 can each share similar thermal conductivity with edge ring 202.Thermally contacting the benefit of pad 208 includes promoting edge ring 202 and electrostatic Good thermo-contact between chuck 126.
Thermo-contact pad 208 can be couple to inner ring 204.Each thermo-contact pad 208 contacts with the second surface 216 of inner ring 204, And in certain embodiments, each thermo-contact pad 208 can have discontinuous (that is, segmentation) ring-shaped, as shown in Figure 3. Thus, thermo-contact pad 208 may include the ring-shaped similar to edge ring 202, however, the thermo-contact may be not exclusively around edge Ring 202 extends.It is anticipated, however, that it is continuous loop and a heat with continuous loop shape in certain embodiments Engagement pad 208 can extend completely around edge ring 202.However, in other embodiments, thermo-contact pad 208 can be any suitable Shape.
In addition, as shown in figure 3, multiple thermo-contact pads 208 can contact with inner ring 204.There are four thermo-contacts as shown in Figure 3 Pad 208, it is contemplated that any number of thermo-contact pad 208 can be used.Each thermo-contact pad 208 can promote in edge ring Good thermo-contact between 202 and electrostatic chuck 126.
The second surface 216 of inner ring 204 may include at least one groove 228 being at least partially formed in second surface. Each groove 228 can accommodate the corresponding one of thermo-contact pad 208.Thus, the heat formed in the second surface 216 of inner ring 204 connects The number of touch pad 208 and the number of groove 228 can be identical.Each thermo-contact pad 208 can be fully contained in each groove 228 It is interior, however, in certain embodiments, each pad 208 that thermally contacts can partly extend from corresponding groove 228 and be projected into inner ring Outside 204 second surface 216.Each groove 228 protects corresponding thermo-contact pad 208 and minimum thermal contact pad 208 and other portions The interference of part.
In certain embodiments, process kit 200 can further comprise conductive member 230.Conductive member 230 can be couple to 4th surface 226 of outer shroud 206.In certain embodiments, outer shroud 206 may include the passage formed in the 4th surface 226 232.Conductive member 230 may be at least partially disposed in passage 232 so that outer shroud 206 is couple to conductive member 230.
Perform test and result instruction minimizes ion focusing by using process kit disclosed herein and defocused Effect, as shown in Fig. 4 A and Fig. 4 B schematic diagram.As further illustrated, the surface of the substrate relative to the ring top surface Position be crucial to minimizing the disturbance of plasma sheath at substrate edges.If the edge ring is processed as so that The substrate is located above the plane of the edge ring, then the plasma sheath can be bent outwardly.Ion is perpendicular to described etc. Gas ions sheath moves, and therefore deviates substrate edges, and this causes etch-rate to reduce.On the other hand, if by the edge Ring is processed as that the substrate is located at below the plane of the ring, then the sheath can curve inwardly so that by ion focusing in institute State on the edge of chip, this causes etch-rate to increase.The substrate is positioned at and institute using process kit disclosed herein State in edge ring identical plane, and therefore minimize the bending of plasma sheath.In addition, the bending of the plasma sheath Ability depends on the thickness of the plasma sheath, and is accordingly dependent on condition of plasma --- predominantly source power and partially Press power (with reference to equation 1).Fig. 4 A and Fig. 4 B are shown, when use relative to substrate bias power (for example, at about 50 watts and about 500 Watt between) high source power (for example, more than about 1000 watts) or use relative to substrate bias power (for example, at about 50 watts Between about 500 watts) low source power (for example, less than about 500 watts) test the disclosure process kit when, the processing The geometry of external member minimizes edge effect, but regardless of the condition of plasma how.
The benefit of the disclosure includes reducing the process kit of the disturbance of the plasma sheath at substrate edges.The edge Ring may include conducting ring and non-conducting loops, and the conducting ring and non-conducting loops can be all processed into be flushed with substrate.Thus, processing External member is acted on to reduce the change being attributed in the plasma etching of uneven plasma sheath, so as to improve the processing Uniformity.
On the whole, implementations described herein relates generally to be adapted to the processing set used in semiconductor processing chamber Part, compared with conventional treatment external member, the process kit reduces edge effect and widening treatment window using single edge ring.Institute State the side that process kit generally comprises the periphery for being disposed adjacent to and being centered around the semiconductor substrate in plasma chamber Edge ring.The size in the gap between the substrate and the edge ring is less than about 1000 μm, and the substrate and the edge Difference in height between ring is less than about 300 μm of (+/-).The resistivity of the ring is less than about 50Ohm-cm.
, also can be in the situation for the base region for not departing from the disclosure although the above is directed to embodiment of the present disclosure Other and further embodiment of the lower design disclosure, and the scope of the present disclosure is determined by appended claims.
Component symbol list
100 semiconductor processing chambers
102 cylindrical side walls
104 bottom walls
106 roofs
108 anode electrodes
110 substrates
120 substrate supports
122 substrate supportive bodies
124 clamping electrodes
126 electrostatic chucks
128 power supplys
130 exhaust manifolds
132 radio-frequency power supplies
134 series coupling capacitors
140 preceding surfaces
142 dielectric substances
144 parts
146 flanges
148 regions
150 peripheries
200 process kits
202 edge rings
204 inner ring
206 outer shrouds
208 thermo-contact pads
210 recesses
212 internal diameters
214 first surfaces
216 second surfaces
218 peripheries
220 support ledges
222 inner rims
224 the 3rd surfaces
226 the 4th surfaces
228 grooves
230 conductive members
232 passages
240 top surfaces.

Claims (17)

1. a kind of process kit for being adapted to use in semiconductor processing chamber, the process kit include：
Edge ring, the edge ring include：
Inner ring, the inner ring include：
Radio frequency body, the radio frequency body have the first surface relative with second surface, the radio frequency Body has the resistivity less than 50Ohm-cm, wherein the inner ring includes the recess set along the internal diameter of the inner ring, wherein institute Stating recess has the vertical component risen less than 1200 μm and the horizontal component extended between 1300 μm and 2500 μm；With
Outer shroud, the outer shroud are couple to the inner ring and included around the periphery of the inner ring, the outer shroud：
Quartz body, the quartz body have threeth surface relative with the 4th surface.
2. process kit as claimed in claim 1, further comprises：
At least one thermo-contact pad, at least one thermo-contact pad contact with the second surface of the inner ring.
3. process kit as claimed in claim 2, it is characterised in that the thermo-contact pad shares similar with the edge ring Thermal conductivity.
4. process kit as claimed in claim 2, it is characterised in that at least one thermo-contact pad has discontinuous ring Shape.
5. process kit as claimed in claim 2, it is characterised in that the thermo-contact pad includes silicone material.
6. process kit as claimed in claim 1, it is characterised in that the second surface of the inner ring is included at least partly At least one groove of boring in the second surface, wherein at least one thermo-contact pad are contained in the groove, and wherein At least one thermo-contact pad includes silicone material.
7. process kit as claimed in claim 1, further comprise the conduction on the 4th surface for being couple to the outer shroud Component.
8. process kit as claimed in claim 7, it is characterised in that the outer shroud is included in what is formed in the 4th surface Passage, and wherein described conductive member is arranged in the passage at least in part.
9. a kind of plasma chamber for being used to perform substrate semiconductor processes, the plasma chamber include：
Substrate support；With
Process kit, the process kit are suitable for the neighbouring substrate support and use and be couple to the substrate support The flange of component, the process kit include：
Edge ring, the edge ring includes the recess set along the internal diameter of the edge ring, wherein the recess has rising small In 1200 μm of vertical components and the horizontal component extended between 1300 μm and 2500 μm；
With
Conductive member, the conductive member are couple to the edge ring.
10. plasma chamber as claimed in claim 9, it is characterised in that the edge ring includes：
Inner ring, the inner ring are arranged adjacent to the substrate support, and the inner ring includes non-metallic conducting material；
Outer shroud, the outer shroud are couple to the inner ring and include quartz material around the periphery of the inner ring, the outer shroud.
11. plasma chamber as claimed in claim 10, it is characterised in that the inner ring has the electricity less than 50Ohm-cm Resistance rate.
12. plasma chamber as claimed in claim 9, further comprises：
At least one thermo-contact pad, at least one thermo-contact pad, which is couple to the edge ring and is arranged on, is formed at institute State in the groove in edge ring.
13. plasma chamber as claimed in claim 12, it is characterised in that at least one thermo-contact pad includes silicon tree Fat material.
14. plasma chamber as claimed in claim 9, it is characterised in that the conductive member is at least partially disposed on It is formed in the passage in the edge ring.
15. plasma chamber as claimed in claim 12, further comprise the second thermo-contact pad, the 3rd thermo-contact pad and the Four thermo-contact pads, wherein each thermo-contact pad is arranged in the groove being formed in the edge ring.
16. a kind of process kit for being adapted to use in the processing chamber, the process kit include：
Edge ring, the edge ring is around the periphery for the substrate support being arranged in the processing chamber housing, the edge Ring includes：
Inner ring, the inner ring are configured to adjacent with the substrate support, and the substrate support includes nonmetallic lead Electric material and along the inner ring internal diameter set recess, wherein the recess have rise less than 1200 μm vertical component and The horizontal component extended between 1300 μm and 2500 μm；
Outer shroud, the outer shroud is couple to the inner ring and around the periphery of the inner ring, wherein the outer shroud includes quartzy material Material；
At least one thermo-contact pad, at least one thermo-contact pad, which is couple to the inner ring and is arranged on, to be formed in described In groove in ring；With
Conductive member, the conductive member are couple to the outer shroud.
17. process kit as claimed in claim 16, it is characterised in that each thermo-contact pad includes silicone material.
CN201720205937.1U 2016-03-04 2017-03-03 Process kit and plasma chamber Active CN206877967U (en)

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JP7562604B2 (en) 2024-10-07
JP2022141681A (en) 2022-09-29
CN113013013A (en) 2021-06-22
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CN107154335B (en) 2021-02-09
TWI746406B (en) 2021-11-11
JP7098273B2 (en) 2022-07-11
JP2017157828A (en) 2017-09-07
TW201742102A (en) 2017-12-01
KR20170103696A (en) 2017-09-13
US20170256435A1 (en) 2017-09-07
TWM548885U (en) 2017-09-11
US11049760B2 (en) 2021-06-29
JP3210105U (en) 2017-04-27
TWI736592B (en) 2021-08-21
CN107154335A (en) 2017-09-12
TW202143288A (en) 2021-11-16

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