CN206806291U - A kind of inexpensive intelligent chip carrier band - Google Patents
A kind of inexpensive intelligent chip carrier band Download PDFInfo
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- CN206806291U CN206806291U CN201720642266.5U CN201720642266U CN206806291U CN 206806291 U CN206806291 U CN 206806291U CN 201720642266 U CN201720642266 U CN 201720642266U CN 206806291 U CN206806291 U CN 206806291U
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- carrier band
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Abstract
A kind of inexpensive intelligent chip carrier band, belongs to intelligent chip encapsulation technology field.Including carrying base material（5）, in carrier band base material（5）Upper surface formed surface conductive layer, insulated trench（4）By surface conductive layer at intervals of some contact blocks, surface metal-layer includes bottom metal layer and is arranged on the contact metal layer of bottom metal layer upper surface, it is characterised in that：In carrier band base material（5）Lower surface offer the welding hole corresponding with contact block（10）, in welding hole（10）The hole inner metal layer that interior formation fits with surface conductive layer, in carrier band base material（5）Middle part offer lumen pore（8）, in lumen pore（8）Upper surface be provided with insulating barrier.In this inexpensive intelligent chip carrier band, hole inner metal layer is formed not in the lumen pore of fixed chip, therefore greatly reduce cost.
Description
Technical field
A kind of inexpensive intelligent chip carrier band, belongs to intelligent chip encapsulation technology field.
Background technology
With the development of integrated circuit and the raising of living standards of the people, the application of smart card is also more and more extensive, its
The fields such as telecommunications, bank, social security, logistics, which are obtained for, to be widely applied.The general procedure of smart card is：Chip is fixed on load
Take, then welded the terminals on chip with carrying upper corresponding terminals, then by around chip and its
Sealing wire carries out cure package.
In recent years, under the market prospects of electronic product miniaturization, smart card is thinning to turn into current trend.In order to reduce mould
Block packaging height, the accommodating chamber for chip placement is opened up on carrier band, chip is fixed in accommodating chamber, due to the one of chip
Partial Height is located in accommodating chamber, therefore reduces the height of whole smart card module.
The structure of belt for smart card of the prior art is as shown in figure 12：Lumen pore 8 is offered in the middle part of carrier band base material,
The border of lumen pore 8 has been arranged as required to multiple welding holes 10, is covered in the top of carrier band base material by copper foil layer 6, in basic unit
Copper foil layer 6 is divided into some contact blocks independent of each other by top by insulated trench 4 simultaneously, and each passes through insulated trench 4
Split formed contact block respectively with a welding hole about 10 it is corresponding.The surface of copper foil layer 6 of each contact block from lower and
On be disposed with contact nickel dam 3 and contact layer gold 1, sequentially form welding nickel from top to bottom in lumen pore 8 and welding hole 10
Layer 2 and welding layer gold 9.
Before chip lead is carried out, chip is fixed in lumen pore 8 first, connecing on chip is then connected by lead
Welding layer gold 9 in line end and welding hole 10.In existing process, welding layer gold 9 and welding nickel dam 2 are same in a technique
When formed, therefore can be inevitable in lumen pore 8 and welding hole 10 while there is welding layer gold 9 and welding nickel dam 2.Due to chamber
Hole 8 is served only for chip placement, therefore the welding layer gold 9 and welding nickel dam 2 that are formed in lumen pore 8 do not play any circuit turn-on
Effect, because the aperture of lumen pore 8 is larger, therefore its internal welding layer gold 9 and welding nickel dam 2 can greatly increase extra cost,
Cause unnecessary waste.
In order to reduce cost, traditional method is again purchase selective electroplating equipment, and the position of lumen pore 8 is covered using mould
Put, play and do not form welding layer gold 9 in lumen pore 8 and weld the effect of nickel dam 2.But its mold design is complicated, and to difference
Product, the versatility of mould is low, and different product basic need individually customizes that different moulds are matching, and price is high, and technique
Process control difficulties, mould hiding rare is low, and lumen pore position material is softer, during unbalance stress, easily causes lumen pore to deform, leads
Yield is caused to reduce.
The content of the invention
The technical problems to be solved in the utility model is：Overcome the deficiencies in the prior art, there is provided one kind is not in fixed chip
Lumen pore in form hole inner metal layer, therefore greatly reduce the inexpensive intelligent chip carrier band of cost.
Technical scheme is used by the utility model solves its technical problem：The inexpensive intelligent chip carrier band, bag
Include carrier band base material, carrier band base material upper surface formed surface conductive layer, if insulated trench by surface conductive layer at intervals of stem grafting
Contact block, surface metal-layer include bottom metal layer and are arranged on the contact metal layer of bottom metal layer upper surface, it is characterised in that：
The welding hole corresponding with contact block is offered in the lower surface of carrier band base material, is provided with welding hole and surface conductive layer phase
The hole inner metal layer of fitting, lumen pore is offered in the middle part of carrier band base material, the upper surface of lumen pore is provided with insulating barrier.
Preferably, dielectric fluid is set in the upper surface of described lumen pore, described insulating barrier is formed after solidification.
Preferably, described bottom metal layer is copper foil layer, and described contact metal layer is fitted in copper foil layer upper table to be secondary
The contact nickel dam and contact layer gold in face.
Preferably, described hole inner metal layer includes being fitted in welding nickel dam and the welding of bottom metal layer lower surface successively
Layer gold.
Compared with prior art, beneficial effect possessed by the utility model is：
In this inexpensive intelligent chip carrier band, nickel dam is welded by setting insulating barrier in lumen pore, therefore being formed
It will not be attached in lumen pore during with welding layer gold, therefore greatly subtract while ensure that the effect that lumen pore should have in itself
Lack the manufacturing cost and material cost of carrier band, therefore also reduce further the cost of smart card module.
Brief description of the drawings
Fig. 1 is the intelligent chip carrying structure schematic diagram of low cost.
Fig. 2 ~ Figure 11 is that the intelligent chip of low cost carries manufacture method schematic flow sheet.
Figure 12 is prior art intelligent chip carrying structure schematic diagram.
Wherein：1st, layer gold 2, welding nickel dam 3, contact nickel dam 4, insulated trench 5, carrier band base material 6, copper are contacted
Layers of foil 7, insulating barrier 8, lumen pore 9, welding layer gold 10, welding hole 11, top layer dry film 12, bottom dry film 13,
Exposure layer.
Embodiment
Fig. 1 is most preferred embodiment of the present utility model, and 1 ~ 11 pair of the utility model is described further below in conjunction with the accompanying drawings.
As shown in figure 1, a kind of inexpensive intelligent chip carrier band, including carrier band base material 5, in the upper surface of base band base material 5
Multiple contact blocks are formed by the interval of insulated trench 4, contact block includes the copper foil layer 6 being bonded with carrier band base material 5 and positioned at copper
The contact nickel dam 3 and contact layer gold 1 of the top of layers of foil 6.Lumen pore 8 is offered in the middle part of the lower surface of carrier band base material 5, in lumen pore 8
Outer ring is provided with welding hole 10 one-to-one with contact block, is pasted in welding hole 10 covered with the copper foil layer 6 with relevant position
The welding nickel dam 2 of conjunction and positioned at welding nickel dam 2, the insulating barrier being bonded in lumen pore 8 covered with the copper foil layer 6 with relevant position
7。
In this inexpensive intelligent chip carrier band, nickel is welded by setting insulating barrier 7 in lumen pore 8, therefore being formed
It will not be attached to when layer 2 and welding layer gold 9 in lumen pore 8, thus it is big while ensure that the effect that lumen pore 8 itself should have
Big reduces the manufacturing cost and material cost of carrier band, therefore also reduce further the cost of smart card module.
As shown in Fig. 2 ~ Figure 11, inexpensive intelligent chip carrier band as shown in Figure 1 is manufactured, is comprised the following steps：
Step 1, prepare carrier band base material 5, lumen pore 8 is stamped and formed out in the middle part of carrier band base material 5 lower surface, then in lumen pore 8
Outlet is stamped and formed out welding hole 10 according to precalculated position, as shown in Fig. 2 ~ Fig. 3.
Step 2, carry out copper-surfaced technique in upper surface in carrier band base material 5 and form copper foil layer 6, as shown in Figure 4.
Step 3, carrier band base material 5 and copper foil layer 6 are toasted first, then the coating dielectric fluid in lumen pore 8, so
Toasted again afterwards or using UV lamp light irradiation dielectric fluid, solidify dielectric fluid, insulating barrier 7 is formed after solidification, such as Fig. 5
It is shown.
Step 4, carry out pressing dry membrane operations, top layer is formed respectively in the lower surface of the upper surface of copper foil layer 6 and carrier band base material 5
Dry film 11 and bottom dry film 12, as shown in Figure 6.
Step 5, operation is exposed to top layer dry film 11, the figure being arranged on after exposure occurs on top layer dry film 11
It is transferred on copper foil layer 6, forms exposure layer 13, as shown in Figure 7.
Step 6, development operation is carried out to top layer dry film 11, after development step, unexposed top layer dry film in steps of 5
11 are removed, and form insulated trench 4, as shown in Figure 8.
Step 7, insulated trench 4 is further etched, insulated trench 4 is etched into the position of carrier band base material 5, such as Fig. 9 institutes
Show.
Step 8, carry out moving back film step, the bottom dry film 12 of the exposure layer 13 on surface and bottom surface is removed, such as Figure 10 institutes
Show.
Step 9, Nickel Plating Treatment is carried out, Nickel Plating Treatment is carried out in the upper and lower surface of carrier band base material 5, in copper foil layer after completion
6 upper surface forms contact nickel dam 3, while forms welding nickel dam 2 in the lower surface of copper foil layer 6 in welding hole 10, such as Figure 11
It is shown.
Step 10, gold-plated processing is carried out, gold-plated processing is carried out in the upper and lower surface of carrier band base material 5, is being contacted after completion
The top of nickel dam 3 forms contact layer gold 1, and welding layer gold 9 is formed in the lower surface of welding nickel dam 2, be made it is as shown in Figure 1 it is low into
This intelligent chip carrier band.
Because the lower surface of the copper foil layer 6 in lumen pore 8 sets the insulating barrier 7 with insulation characterisitic, therefore plated
Nickel processing will not adhere to corresponding welding nickel dam 2 and then also be not in welding layer gold 9 in gold-plated processing, therefore substantially reduce
Material cost, while the cost of carrier band finished product has also been decreased, and do not interfere with the performance of carrier band itself.
During using the intelligent chip carrier band of above-mentioned processing step manufacture low cost, it is not necessary to according to lumen pore 8
Shape more mold exchange, reduce equipment loss, ensure that the normal working life of equipment, and on common electroplating device
The manufacture of this inexpensive intelligent chip carrier band can be achieved, therefore the requirement to equipment substantially reduces.
It is described above, only it is preferred embodiment of the present utility model, is not that other forms are made to the utility model
Limitation, any person skilled in the art is changed or is modified as possibly also with the technology contents of the disclosure above equivalent
The equivalent embodiment of change.But it is every without departing from the content of the technical scheme of the utility model, it is real according to technology of the present utility model
Any simple modification, equivalent variations and the remodeling that confrontation above example is made, still fall within the guarantor of technical solutions of the utility model
Protect scope.
Claims (4)
1. a kind of inexpensive intelligent chip carrier band, including carrier band base material（5）, in carrier band base material（5）Upper surface formed surface
Conductive layer, insulated trench（4）Surface conductive layer is included into bottom metal layer and setting at intervals of some contact blocks, surface metal-layer
Contact metal layer in bottom metal layer upper surface, it is characterised in that：In carrier band base material（5）Lower surface offer and contact block
Corresponding welding hole（10）, in welding hole（10）The hole inner metal layer to be fitted with surface conductive layer is inside provided with, is being carried
Base material（5）Middle part offer lumen pore（8）, in lumen pore（8）Upper surface be provided with insulating barrier（7）.
2. inexpensive intelligent chip carrier band according to claim 1, it is characterised in that：In described lumen pore（8）It is upper
Surface sets dielectric fluid, and described insulating barrier is formed after solidification（7）.
3. inexpensive intelligent chip carrier band according to claim 1, it is characterised in that：Described bottom metal layer is copper
Layers of foil（6）, described contact metal layer is to be fitted in copper foil layer successively（6）The contact nickel dam of upper surface（3）With contact layer gold
（1）.
4. inexpensive intelligent chip carrier band according to claim 1, it is characterised in that：Described hole inner metal layer includes
The welding nickel dam of bottom metal layer lower surface is fitted in successively（2）With welding layer gold（9）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720642266.5U CN206806291U (en) | 2017-06-05 | 2017-06-05 | A kind of inexpensive intelligent chip carrier band |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720642266.5U CN206806291U (en) | 2017-06-05 | 2017-06-05 | A kind of inexpensive intelligent chip carrier band |
Publications (1)
| Publication Number | Publication Date |
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| CN206806291U true CN206806291U (en) | 2017-12-26 |
Family
ID=60744843
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086182A (en) * | 2017-06-05 | 2017-08-22 | 恒汇电子科技有限公司 | A kind of inexpensive intelligent chip carrier band and manufacture method |
-
2017
- 2017-06-05 CN CN201720642266.5U patent/CN206806291U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086182A (en) * | 2017-06-05 | 2017-08-22 | 恒汇电子科技有限公司 | A kind of inexpensive intelligent chip carrier band and manufacture method |
| CN107086182B (en) * | 2017-06-05 | 2023-08-18 | 新恒汇电子股份有限公司 | Low-cost intelligent chip carrier tape and manufacturing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190612 Address after: 255088 No. 187 middle run road, hi tech Zone, Zibo, Shandong Patentee after: Shandong Xinheng Electronic Technology Co., Ltd. Address before: 256400 No. 1, unit 20, 20 Xiyuan Road, 2225 Dongyue Road, Huantai, Zibo, Shandong. Patentee before: Chen Tongsheng |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 255088 No. 187 middle run road, hi tech Zone, Zibo, Shandong Patentee after: New Henghui Electronics Co.,Ltd. Address before: 255088 No. 187 middle run road, hi tech Zone, Zibo, Shandong Patentee before: SHANDONG XINHENGHUI ELECTRONICS TECHNOLOGY Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |