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CN206697508U - 薄膜电池光伏组件 - Google Patents

薄膜电池光伏组件 Download PDF

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CN206697508U
CN206697508U CN201720562486.7U CN201720562486U CN206697508U CN 206697508 U CN206697508 U CN 206697508U CN 201720562486 U CN201720562486 U CN 201720562486U CN 206697508 U CN206697508 U CN 206697508U
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thin
film
photovoltaic component
component according
cell photovoltaic
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张金春
杨生
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Miaso Solar Technologies Ltd
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Priority to PCT/CN2018/087536 priority patent/WO2018210342A1/zh
Priority to EP18729533.2A priority patent/EP3428974A4/en
Priority to US16/066,663 priority patent/US20210202769A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/70—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes
    • H10F19/75—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/807—Double-glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/85—Protective back sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)

Abstract

本实用新型提供了一种薄膜电池光伏组件，其中，包括背玻璃、前封装板和薄膜电池组，所述薄膜电池组设置在所述背玻璃和所述前封装板之间，且所述薄膜电池组的受光面朝向所述前封装板；在所述薄膜电池组与所述前封装板之间设置有封装胶膜。本实用新型提供的薄膜电池光伏组件仅在薄膜电池组与前封装板之间设置封装胶膜，降低了太阳能电池受拉压的程度，同时无需使用浮法玻璃，简化了加工工艺。

Description

薄膜电池光伏组件
技术领域
本实用新型涉及太阳能电池技术，尤其涉及一种薄膜电池光伏组件。
背景技术
随着太阳能电池技术的发展，CIGS薄膜电池构成的光伏组件越来越多地得到应用。现有的CIGS薄膜电池，两面均设置有POE封装胶膜。这样的封装方式，在冷热剧烈变化时，背玻璃和前封装板的热胀冷缩会对CIGS薄膜电池的膜层产生拉压，进而影响了光伏组件的寿命。也有的太阳能电池前后均通过玻璃封装，为了满足封装要求，需要使用浮法玻璃并在其上刻蚀，因此对加工工艺的要求很高。
实用新型内容
本实用新型的目的是提供一种薄膜电池光伏组件，以解决现有技术中的问题，降低太阳能电池受拉压的程度，并简化加工工艺。
本实用新型提供了一种薄膜电池光伏组件，其中，包括背玻璃、前封装板和薄膜电池组，所述薄膜电池组设置在所述背玻璃和所述前封装板之间，且所述薄膜电池组的受光面朝向所述前封装板；
在所述薄膜电池组与所述前封装板之间设置有封装胶膜。
如上所述的薄膜电池光伏组件，其中，优选的是，所述前封装板为前玻璃或ETFE膜材。
如上所述的薄膜电池光伏组件，其中，优选的是，所述封装胶膜为POE膜。
如上所述的薄膜电池光伏组件，其中，优选的是，所述薄膜电池组与所述背玻璃之间设置有二极管串、连接片及汇流条。
如上所述的薄膜电池光伏组件，其中，优选的是，所述薄膜电池组与所述二极管串、连接片及汇流条之间设置有绝缘层。
如上所述的薄膜电池光伏组件，其中，优选的是，还包括接线盒，所述汇流条穿出后接入所述接线盒。
如上所述的薄膜电池光伏组件，其中，优选的是，所述汇流条通过出口穿出，所述出口位于所述背玻璃上或位于所述背玻璃与所述前封装板之间。
如上所述的薄膜电池光伏组件，其中，优选的是，所述出口的位置设置有密封胶。
如上所述的薄膜电池光伏组件，其中，优选的是，所述背玻璃与所述前封装板之间通过胶条密封。
如上所述的薄膜电池光伏组件，其中，优选的是，所述胶条为丁基胶条。
本实用新型提供的薄膜电池光伏组件仅在薄膜电池组与前封装板之间设置封装胶膜，降低了太阳能电池受拉压的程度，同时无需使用浮法玻璃，简化了加工工艺。
附图说明
图1为本实用新型实施例提供的薄膜电池光伏组件的结构简图；
图2为本实用新型实施例提供的薄膜电池光伏组件的断面图。
附图标记说明：
1-前封装板 2-封装胶膜 3-薄膜电池组 4-绝缘层 5-二极管串、连接片及汇流条6-背玻璃 7-接线盒
具体实施方式
下面详细描述本实用新型的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本实用新型，而不能解释为对本实用新型的限制。
图1为本实用新型实施例提供的薄膜电池光伏组件的结构简图，图2为本实用新型实施例提供的薄膜电池光伏组件的断面图。
本实用新型实施例提供了一种薄膜电池光伏组件，包括背玻璃6、前封装板1和薄膜电池组3，其中，薄膜电池组3设置在背玻璃6和前封装板1之间，且薄膜电池组3的受光面朝向该前封装板1；在薄膜电池组3与前封装板1之间设置有封装胶膜2。前封装板1可以采用玻璃制成，即前玻璃，与背玻璃6和薄膜电池组3共同组成双玻组件。前封装板1也可以采用现有技术中的乙烯-四氟乙烯共聚物(ETFE)膜材，ETFE膜材与背玻璃6及薄膜电池组3组成光伏组件。封装胶膜2可以是POE膜，也可以是其他材质的胶膜。
与现有技术相比，本实用新型实施例提供的薄膜电池光伏组件仅在薄膜电池组3与前封装板1之间设置封装胶膜2，降低了太阳能电池受拉压的程度，同时无需使用浮法玻璃，简化了加工工艺。
优选的是，薄膜电池组3与所述背玻璃6之间设置有二极管串、连接片及汇流条5。二极管串、连接片及汇流条5的布置方式与现有技术相同，在此不再赘述。本领域技术人员可以理解的是，二极管串、连接片及汇流条分别是独立的部件，本实施例中示出的简图中，采用一个附图标记进行了简要说明。
为了将二极管串、连接片及汇流条5与薄膜电池组3绝缘开，可在薄膜电池组3与二极管串、连接片及汇流条5之间设置有绝缘层4。
进一步地，本实用新型实施例提供的薄膜电池光伏组件还包括接线盒7，上述汇流条穿出后接入该接线盒7。具体地，汇流条通过出口穿出，该出口位于背玻璃6上或位于背玻璃6与前封装板1之间，出口处通过密封胶密封。参照图1和图2，本实施例中，该出口位于背玻璃6上。上述密封胶可以采用丁基胶，其通用性强，密封性能好。
进一步地，背玻璃6与前封装板1之间通过胶条密封。该胶条可以采用现有技术中的普通胶条，也可以采用丁基胶条。
以上依据图式所示的实施例详细说明了本实用新型的构造、特征及作用效果，以上所述仅为本实用新型的较佳实施例，但本实用新型不以图面所示限定实施范围，凡是依照本实用新型的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本实用新型的保护范围内。

Claims (10)

1.一种薄膜电池光伏组件，其特征在于，包括背玻璃、前封装板和薄膜电池组，所述薄膜电池组设置在所述背玻璃和所述前封装板之间，且所述薄膜电池组的受光面朝向所述前封装板；
在所述薄膜电池组与所述前封装板之间设置有封装胶膜。
2.根据权利要求1所述的薄膜电池光伏组件，其特征在于，所述前封装板为前玻璃或ETFE膜材。
3.根据权利要求1或2所述的薄膜电池光伏组件，其特征在于，所述封装胶膜为POE膜。
4.根据权利要求1或2所述的薄膜电池光伏组件，其特征在于，所述薄膜电池组与所述背玻璃之间设置有二极管串、连接片及汇流条。
5.根据权利要求4所述的薄膜电池光伏组件，其特征在于，所述薄膜电池组与所述二极管串、连接片及汇流条之间设置有绝缘层。
6.根据权利要求5所述的薄膜电池光伏组件，其特征在于，还包括接线盒，所述汇流条穿出后接入所述接线盒。
7.根据权利要求6所述的薄膜电池光伏组件，其特征在于，所述汇流条通过出口穿出，所述出口位于所述背玻璃上或位于所述背玻璃与所述前封装板之间。
8.根据权利要求7所述的薄膜电池光伏组件，其特征在于，所述出口的位置设置有密封胶。
9.根据权利要求1或2所述的薄膜电池光伏组件，其特征在于，所述背玻璃与所述前封装板之间通过胶条密封。
10.根据权利要求9所述的薄膜电池光伏组件，其特征在于，所述胶条为丁基胶条。
CN201720562486.7U 2017-05-19 2017-05-19 薄膜电池光伏组件 Expired - Fee Related CN206697508U (zh)

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PCT/CN2018/087536 WO2018210342A1 (zh) 2017-05-19 2018-05-18 薄膜电池光伏组件
EP18729533.2A EP3428974A4 (en) 2017-05-19 2018-05-18 THIN FILM PHOTOVOLTAIC BATTERY ASSEMBLY
US16/066,663 US20210202769A1 (en) 2017-05-19 2018-05-18 Thin-film battery photovoltaic module

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