CN206650065U - Semiconductor package body - Google Patents

Abstract

The utility model relates to a semiconductor packaging body. The package is characterized by a plurality of grooves, a plurality of through holes and a non-conductive coupling element forming a locking mechanism integrally embedded or integrated in the substrate. The package has a cap coupled to the non-conductive coupling element by ultrasonic plastic welding. The package protects the die from the external environment or external stress or both. A method for forming a package to reduce overflow defects in the package is desired. Fabrication of the package includes: drilling holes in the substrate; forming trenches in the substrate; forming non-conductive coupling elements in the vias and the trenches to form a locking mechanism; allowing the non-conductive coupling elements to harden and curing; coupling a die or die to the substrate, and coupling a cap to the non-conductive coupling element, thereby protecting the die or die from the external environment or external stress, or both.

Description

semiconductor package

technical field

The present disclosure relates to a package having a base and a cap coupled to the base through coupling features formed in the base.

Background technique

Packages often include a semiconductor die and a substrate that provides an interface between the substrate and contacts on the semiconductor die. The package may include an encapsulant for securing the components of the package into a single discrete unit. Alternatively, the package may include a cap on the substrate enclosing the die in the chamber. The cap is coupled to the base by adhesive. Typically the glue is applied to the substrate, and the cap is then placed on the glue. The glue is then allowed to harden and cure, thereby coupling the cap to the substrate and protecting the die from the external environment or external stress or both.

Unfortunately, when the cap is placed over the adhesive that has been applied to the substrate to attach the cap, the substrate and the die become susceptible to adhesive spillage. Spills of adhesive may cover critical components on the substrate or the die that are necessary for the package to operate at maximum capacity, such as covering contact pads. The fragility of packages greatly increases the difficulty of handling these packages during the manufacturing process. Not using glue increases the overall percentage of viable packages and semiconductor sensors from each manufacturing lot.

Utility model content

One or more embodiments provide an arrangement capable of managing different application scenarios with a single layout.

One or more embodiments may relate to a corresponding device (such as a device for the automotive field, such as a lambda heater) comprising the driver circuit.

One or more embodiments may provide a circuit capable of driving all possible configurations (eg, N high side, P high side, N low side), with capabilities for a wide range of application scenarios.

Contrary to solutions with limited possibilities to drive external components (such as driving an external NMOS in a high-side or low-side configuration, with a different circuit for PMOS driving), one or more embodiments make it possible to drive with a single layout N-type or P-type MOSFETs, resulting in a situation where the voltage regulation loop turns on the external MOS.

One or more embodiments may thus be able to drive various (nominally all) possible configurations of external components such as MOSFETs (MOS for short).

One or more embodiments may avoid the limitations of existing solutions by employing a (pre-)driver layout that is compatible with various existing application solutions and anticipated by future possible configurations.

One or more embodiments may allow for saving silicon area, using fewer pins, and increasing circuit flexibility.

One or more embodiments may include two output terminals or pins for, for example, coupling to external components such as gate and source of a MOS.

In one or more embodiments one pin may be coupled to the gate of the external NMOS or the source of the external PMOS, while the other pin is coupled to the source of the external NMOS or the gate of the external PMOS.

According to one aspect, there is provided a semiconductor package comprising: a support base having a first surface and a second surface; a plurality of non-conductive coupling elements embedded in the In the substrate, the non-conductive coupling element includes: a first portion having a top surface substantially coplanar with the top surface of the substrate, the first portion extending into the substrate; and a second portion extending from the first portion through the base to the second surface of the base; a first support area on the base of the base between two non-conductive coupling elements on the first surface; a first die coupled to the first support region of the substrate between the two non-conductive coupling elements a space; and a cap coupled to the non-conductive coupling element, the cap forming a chamber surrounding the first die.

Description of drawings

In the drawings, identical reference numbers identify similar elements or acts, unless context dictates otherwise. The size and relative positions of elements in the drawings are not necessarily drawn to scale.

1 is a top plan view of an embodiment of a semiconductor package;

2 is a cross-sectional view taken along line 2-2 of the package of FIG. 1;

3 is a cross-sectional view of an alternative embodiment of a semiconductor package taken along line 3-3 of the package in FIG. 4;

4 is a top plan view taken along line 4-4 of the alternate embodiment of the semiconductor package of FIG. 3;

Figure 5 is a cross-sectional view of an alternative embodiment of a package;

6 is a cross-sectional view of an alternative embodiment of a package;

7 is a top plan view of an alternative embodiment of a substrate for the semiconductor package of FIG. 6 prior to attachment of a cap;

8-18 are cross-sectional and top plan views of successive steps in a package fabrication process according to disclosed embodiments;

Figure 19 is a cross-sectional view of the final package made according to the method shown and described with respect to Figures 8-18;

20-21 are cross-sectional views of an alternative embodiment of a package at successive steps in a package manufacturing process according to disclosed embodiments; and

22 is a cross-sectional view of a completed package according to the embodiment of FIGS. 20-21 .

detailed description

In the following description, certain specific details are set forth in order to provide a thorough understanding of various embodiments of the present disclosure. However, it will be understood by those skilled in the art that the present disclosure may be practiced without these specific details. In other instances, well-known structures associated with electronic components and manufacturing techniques have not been described in detail to avoid unnecessarily obscuring the description of the embodiments of the present disclosure.

Throughout the specification and appended claims, unless the context requires otherwise, the word "comprise" and its variations (eg, "comprises" and "comprising") will be used with a It should be interpreted in an open and inclusive sense, that is, as "including, but not limited to (including, but not limited to)".

The use of ordinal numbers (eg, first, second, and third) does not necessarily imply a rank sense of order, but may merely distinguish between multiple instances of an action or structure.

Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, throughout this specification, appearances of the phrase "in one embodiment" or "in an embodiment" in different instances do not necessarily all refer to the same embodiment. Furthermore, particular features, structures or characteristics may be combined in any suitable manner in one or more embodiments.

As used in this specification and the appended claims, the singular forms "a," "an" and "the" include plural referents unless the content clearly dictates otherwise. It should also be noted that the term "or" is generally employed in its sense including "and/or" unless the content clearly dictates otherwise.

FIGS. 1 and 2 relate to one embodiment of a package 38 that includes a substrate 40 , a non-conductive coupling element 42 , a cap 44 , a die 46 and a cavity 48 . Die 46 may be any semiconductor sensor for measuring any desired quantity.

In this embodiment, substrate 40 is disposed on the bottom of package body 38 as a base layer during fabrication. Substrate 40 has die 46 coupled to a first surface of substrate 40 . Die 46 is electrically and physically coupled to substrate 40 at support region 41 . The support area 41 may have any shape or size. Substrate 40 contains electrical connections and features for electrically connecting die 46 to circuitry outside package 38 . These electrical connections or features may be formed by known techniques of conductive die attach films, conductive lines, bond lines, conductive pads, combinations thereof, or any other technique known in the semiconductor industry. Substrate 40 also has non-conductive coupling elements 42 , such as plastic, polymer, dielectric material, or any other insulating or non-conductive material, formed in the holes and trenches of substrate 40 . The non-conductive coupling element 42 is formed in the substrate 40 and is allowed to harden and cure within the substrate 40 prior to coupling the cap 44 to the package. The non-conductive coupling element 42 surrounds the support region 41 . The non-conductive coupling element 42 in the substrate 40 allows the cap 44 to be directly coupled to the non-conductive coupling element 42, thereby avoiding the use of glue to couple the cap 44 to the substrate 40 to form the package. Cap 44 may be coupled to non-conductive coupling element 42 by ultrasonic plastic welding, heat treatment, or any other attachment or coupling technique known in the semiconductor industry for two polymers without the use of glue. . Cap 44 forms cavity 48 around die 46 , protecting die 46 from undesired exposure to the ambient environment, external stress, or both. Attaching the cap 44 with the non-conductive coupling element 42 already formed and cured in the substrate 40 allows the manufacturer to avoid the use of glue. Further, any possible spillage of adhesive onto electrical connections and components exposed on substrate 40 or die 46 is avoided.

3 and 4 relate to an alternative embodiment of a package 59 comprising a substrate 64, a non-conductive coupling element 42, a cap 52 with walls 62, two dies 54, 56 and two cavities 58. , 60. The two dies 54, 56 may be any semiconductor sensors for measuring any desired quantity.

In this embodiment, substrate 64 is placed on the bottom of package 59 as a base layer during fabrication. Substrate 64 has two dies 54 , 56 coupled to a first surface of substrate 64 . Dies 54 , 56 are electrically and physically coupled to substrate 64 . Substrate 64 contains the electrical connections and components needed to make dies 54, 56 electrically accessible to the external environment. As in other embodiments, these electrical connections and features may be formed by conductive die attach films, conductive lines, conductive pads, or any other technique known in the semiconductor industry. Substrate 64 also has non-conductive coupling elements 42 , such as plastic, polymer, dielectric material, or any other insulating material, formed in the holes and trenches of substrate 64 . The non-conductive coupling element 42 has been allowed to harden and cure within the substrate 64 prior to coupling the cap 52 to the package. The non-conductive coupling element 42 in the base allows for direct coupling of the cap 52 to the non-conductive coupling element 42 , thereby avoiding the use of glue to couple the cap 52 to the base 64 . Cap 52 may be coupled to non-conductive coupling element 42 by ultrasonic plastic welding or any other technique known in the semiconductor industry. The cap 52 forms a cavity 58 , 60 around each of the two die 54 , 56 , thereby protecting the die 54 , 56 from the external environment, external stress, or both. Utilizing the non-conductive coupling element 42 already formed and cured in the substrate 64 to attach the cap 52 allows the manufacturer to avoid the use of glue, and avoid any potential spillage of the glue onto the substrate 64 or the die 54, 56 exposed on electrical connections and components. Furthermore, attaching the cap 52 with the non-conductive coupling element 42 already formed and cured in the substrate 64 allows any number of semiconductor die 54, 56 to be packaged together quickly and easily, thereby fabricating a protective single semiconductor die. , multiple semiconductor dies, a single electronic device, or a package of multiple electronic devices.

FIG. 5 relates to a similar alternative embodiment of the package 69 as in FIGS. 3 and 4 . This alternative embodiment of the package includes a substrate 64 , a non-conductive coupling element 42 , a cap 70 with walls and two holes 68 , two dies 72 , 74 and two chambers 58 , 60 . The two die 72, 74 may be any semiconductor sensor or electronic device for measuring any desired quantity.

This alternative embodiment of the package 69 is similar to FIGS. 3 and 4 , the only difference being the two holes 68 in the cap 70 . These two holes 68 in the cap 70 allow for proximity sensors, gas sensors and other similar semiconductor sensors, die or electronics that need to be exposed to the external environment and protected from external stresses. Likewise, any number of embodiments with any number of dies, any number of cavities, and any number of holes in the cap can be fabricated by attaching the cap to the substrate using non-conductive coupling elements, as well as any other Similar alternative embodiment. For example, an alternative embodiment may have three dies, three chambers, and a cap with a single hole exposing only one chamber and one die to the external environment, while the other dies remain in the sealed chamber. chamber as a reference die. Furthermore, alternative embodiments may have a single die, a single chamber, and a cap with a single aperture exposing the chamber and the die to the external environment.

In one embodiment, dies 72 and 74 are gas sensors. Apertures 68 expose the die to ambient air. Each die 72 and 74 can sense a different gas, eg, CO2, CO, CH4, etc. FIG. Alternatively, one die may be a reference die kept sealed in a reference ambient gas (e.g., argon, nitrogen, or ambient air) with no vents into its chamber 76, while the other die is The hole 68 opening into its chamber 76 is exposed to ambient gas.

Figures 6 and 7 relate to a similar alternative embodiment of the package as in Figure 1 . This alternative embodiment of the package includes a substrate 80 , a non-conductive coupling element 42 , a cap 78 without walls, two dies 82 , 84 and a cavity 76 . Figure 7 shows an alternative embodiment in which a plurality of square holes 86 are formed in the base 80 instead of round holes.

This alternative embodiment has a package similar to that of FIG. 1 , except for the two dies 82, 84 in one cavity 76 and a square hole 86 instead of a round hole. The two dies 82 , 84 in the one chamber 76 allow the multi-sense package to be fabricated with less material when the cap wall does not have to separate each die 82 , 84 . Also, by attaching the cap to the substrate with a non-conductive coupling element, alternative embodiments such as three die, a single chamber, and a cap with no walls can be fabricated and other similar alternative embodiments. Furthermore, the holes in the plurality of through holes 86 may have any desired cross-sectional shape. For example, the holes of the plurality of through holes may be square, octagonal, rectangular, circular, or any other cross-sectional shape. Also, in alternative embodiments, the second trenches of the plurality of second trenches may also be aligned with the plurality of via holes.

8 to 19 illustrate the steps of manufacturing the package 89 . FIG. 8 is a side view of substrate 88 and FIG. 9 is a top plan view of FIG. 8 . Substrate 88 has a first surface 89 and a second surface 91 . Substrate 88 may be a printed circuit board (PCB), wafer, thin silicon wafer, silicon dioxide, alumina, or any such substrate material known in the semiconductor industry. Substrate 88 includes the electrical connections and components needed to form the electrical connections that couple the electrical components to substrate 88 . These electrical connections and components are not provided in the figures to avoid confusion.

10 is a cross-sectional side view of a substrate 88 having a plurality of through holes 90 that have been formed through or in the substrate 88 from a first surface to a second surface, and FIG. 11 is Figure 10 Top plan view.

In one embodiment, these holes 90 are drilled in the substrate to create a locking mechanism when a non-conductive coupling element 96 ( FIG. 15 ) is placed or formed in the through holes 90 and grooves 92 , 94 . These vias 90 may be formed by any acceptable technique, eg, masked etching, laser cutting, mechanical drilling, punching, or any of the many known ways for forming holes completely through a substrate.

These through-holes 90 formed in the base 88 act as a locking mechanism, and a non-conductive coupling element 96 is formed or placed in the holes 90 and grooves 92, 94, as opposed to forming only the non-conductive coupling element 96 in the base 88. This allows for greater structural integrity of the package than would be the case within the trench and the absence of vias. In other words, this allows for a more secure coupling of the cap to the package, thereby reducing the likelihood of the cap separating from the package when exposed to the external environment, external stress, or both.

FIG. 12 is a top plan view of the plurality of first trenches 92 in the first surface 89 of the substrate 88 . The plurality of first trenches 92 are formed over or on tops of the plurality of via holes 90 . Each first groove of the plurality of first grooves 92 is aligned with a certain number of holes of the plurality of through holes 90 . Likewise, each first groove of the plurality of first grooves 92 is substantially parallel to other first grooves of the plurality of first grooves 92 . The plurality of through holes 90 and the plurality of first grooves 92 form a plurality of continuous T-shaped holes 97 that create a non-conductive coupling element 96 locking mechanism for the cap 102 ( FIG. 14 , Figure 15 and Figure 19). These T-shaped holes 97 allow for a more secure coupling of the cap 102 to the package, thereby reducing the likelihood of the cap separating from the package when exposed to the external environment, or external stress, or both.

FIG. 13 is a top plan view of a plurality of second trenches 94 formed transversely or substantially perpendicular to the plurality of first trenches 92 . The plurality of second trenches 94 are not aligned with a certain number of the plurality of through holes 90 . But each second trench of the plurality of second trenches 94 may overlap at least one of the plurality of vias 90 .

In this embodiment, the plurality of first trenches 92 and the plurality of second trenches 94 are formed to support the cap 102 and allow sealing of the die 98, 100 in separate chambers (FIG. 19). The second grooves of the plurality of second grooves 94 may overlap at least one of the through holes aligned with the first grooves 92 . The plurality of first trenches 92 and the plurality of second trenches 94 may be formed by milling, etching, or other techniques known in the semiconductor industry. Likewise, the plurality of first grooves 92 and the plurality of second grooves 94 form a first support region 93 and a second support region 95 . The plurality of first grooves 92 and the plurality of second grooves 94 combine with the plurality of vias 90 to form a plurality of channels and a plurality of T-shaped holes 97 that allow for non-conductive coupling elements 96 is formed throughout the entire base 88 . A first support region 93 is positioned between two of the non-conductive coupling elements 96 and a second support region 95 is positioned around the first support region in the two non-conductive coupling elements 96 between one non-conductive coupling element 93 and the other non-conductive coupling element 96 . Utilizing the trenches 92, 94 on or along the edge of the substrate 88 allows the cap 102 to be coupled to the substrate 88, allows the package to be structurally robust, and allows the die 98, 100 to be hermetically sealed from the external environment. , be protected from external stresses, or both.

14 is a cross-sectional side view of substrate 88 after the plurality of vias 90 , the plurality of first trenches 92 , and the plurality of second trenches 94 have been formed.

15 is a cross-sectional side view of substrate 88 with the plurality of vias 90 , the plurality of first trenches 92 , and the plurality of second trenches 94 filled with non-conductive coupling elements 96 .

In this embodiment, non-conductive coupling elements 96 are formed in the plurality of vias 90 , the plurality of first grooves 92 , and the plurality of second grooves 94 to form an integral support for the cap 102 , Coupling area and locking mechanism. The non-conductive coupling elements 96 may be placed in these grooves and holes 90, 92, 94 by injection molding them from the sides, top, bottom, or in any other manner. in the slot. Alternatively, non-conductive coupling elements 96 may be pre- and separately formed and then compressed into the trenches and holes 90, 92, 94, or the trenches and holes may be formed by any other method known in the semiconductor industry. technology to fill with non-conductive material. Likewise, the non-conductive coupling element 96 may be a plastic, polymer, dielectric material, or any other insulating material that may be sprayed, compressed, or otherwise formed into place using methods known in the semiconductor industry. When the non-conductive coupling element 96 is formed in place, the non-conductive coupling element 96 is allowed to harden and cure. Utilizing the non-conductive coupling element 96 to couple the cap 102 to the substrate 88 in the package allows the manufacturer to avoid the use of glue, which reduces the possibility of overflowing onto the substrate 88 or onto the die 98 , 100 .

16 is a top view of substrate 88 when the plurality of vias 90, the plurality of first trenches 92, and the plurality of second trenches 94 are filled with non-conductive coupling elements 96 that are then allowed to harden and cure. floor plan.

FIG. 17 is a cross-sectional side view of two dies 98 , 100 coupled to the first surface 89 of the substrate 88 . The two die 98, 100 are electrically and physically coupled to the first surface 89 of the substrate 88 such that the die 98, 100 can be electrically accessed from outside the final package. Each die 98 , 100 is placed on the first surface 89 of the substrate 88 by non-conductive couplings in the plurality of vias 90 , the plurality of first trenches 92 , and the plurality of second trenches 94 . In the first supporting region 93 or in the second supporting region 95 surrounded or delimited by the connection element 96 .

FIG. 18 is a top plan view of two dies 98 , 100 coupled to substrate 88 . The two die 98, 100 are electrically and physically coupled to the first surface of the substrate 88 such that the die 98, 100 can be electrically accessed from outside the completed package. Each die 98, 100 is placed on the first surface of the substrate 88 in a non-conductive coupling formed by the plurality of vias 90, the plurality of first trenches 92, and the plurality of second trenches 94. The element 96 surrounds or delimits either the first support region 93 or the second support region 95 .

Figure 19 is a cross-sectional side view of an alternative embodiment of a completed package. Cap 102 having walls has been coupled to non-conductive coupling element 96 which has been hardened and cured within base 88 .

In this embodiment, the completed package 89 has a substrate 88 disposed on the bottom of the package as a base layer. Substrate 88 has two dies 98 , 100 coupled to a first surface of substrate 88 . Die 98 , 100 are electrically coupled to substrate 88 . Substrate 88 contains the electrical connections and components needed to make die 98, 100 electrically accessible to the external environment. These electrical connections and components may be formed by conductive die attach films, conductive lines, conductive pads, combinations thereof, or any other technique known in the semiconductor industry. Substrate 88 also has non-conductive coupling elements 96 , such as plastic, polymer, dielectric material, or any other insulating material, formed in holes 90 and trenches 92 , 94 of substrate 88 . The non-conductive coupling element 96 has been allowed to harden and cure within the substrate 88 prior to coupling the cap 102 to the package. The non-conductive coupling element 96 in the base allows the cap 102 to be coupled directly to the non-conductive coupling element 96 , thereby avoiding the use of glue to couple the cap 102 to the base 88 . The cap 102 forms a cavity around each of the two die 98, 100, thereby protecting the die 98, 102 from the external environment, external stress, or both. Attaching the cap 102 with the non-conductive coupling element 96 that has been formed, hardened and cured in the substrate 88 allows the manufacturer to avoid the use of glue and avoid any possible spillage of the glue onto the exposed substrate 88 or die 98, 100 on the electrical connections and components. In addition, attaching the cap 102 with the non-conductive coupling element 96 already formed and cured in the substrate 88 allows any number of semiconductor die 98, 100 to be packaged together quickly and easily, thereby fabricating protection for a single die, A package that protects multiple dies, single electronic devices, and multiple electronic devices from the external environment or external stress.

Cap 102 and coupling element 96 are made of materials that can be bonded by techniques that do not require glue to form a tight unitary bonded member. For example, the two could be made of polymers that can be ultrasonically welded to each other. After being placed together, the joint of cap 102 and coupling element 96 is subjected to an ultrasonic welding beam which permanently fuses the two components to each other. Other techniques can be used such as heating the joint to melt the two components together and then rapidly cooling it to form a permanent bond, laser welding, or other techniques known to attach the two components to each other without glue. other technologies connected. A wide variety of plastics, other materials, and different polymers that can be ultrasonically welded to each other to form a hermetic seal, tight, permanent bond are known in the art, and any of these materials can be used for the cap 102 and coupling. connecting member 96.

FIG. 20 is a cross-sectional view of an alternative embodiment of a package including a base layer of a substrate 104 having a plurality of I-shaped holes 103 .

21 is a cross-sectional side view of an alternative embodiment of a package including a substrate 104 base layer with a plurality of I-shaped holes 103 filled with non-conductive coupling elements 106 . The plurality of I-shaped holes 103 are composed of a plurality of first grooves, a plurality of second grooves, a plurality of third grooves, a plurality of fourth grooves and a plurality of through holes.

In this embodiment, a plurality of via holes and a plurality of trenches have been formed in the first surface of the substrate 104 . However, several trenches have been formed on the second surface of the substrate 104 . A plurality of third grooves opposite to corresponding first grooves of the plurality of first grooves on the first surface of the substrate 104 have been formed on the second surface of the substrate 104 . Likewise, a plurality of fourth grooves opposite to corresponding second grooves of the plurality of second grooves on the first surface of the substrate 104 have been formed on the second surface of the substrate 104 . These plurality of first, second, third, and fourth grooves are used to further integrate the non-conductive coupling element 106 in the base 104 and to form a stronger locking mechanism. The plurality of first trenches and the plurality of third trenches are aligned with a plurality of vias of the plurality of vias. The second grooves of the second grooves and the fourth grooves of the fourth grooves may be aligned with at least one of the via holes of the first grooves and the third grooves. One via overlaps. This is because the plurality of first, second, third, and fourth grooves and the plurality of through holes form a plurality of continuous I-shaped holes 103 . These I-shaped holes 103 allow the non-conductive coupling element 106 to harden and cure on the second surface of the substrate 104, thereby creating a stronger and more integrated locking mechanism than the T-shaped holes 97 discussed in the alternative embodiment above.

22 is a cross-sectional side view of an alternative embodiment of a completed package 91 including a cap 108 coupled to a non-conductive coupling element 106 formed in a substrate 104 In the plurality of I-shaped holes 103.

The various embodiments described above may be combined to provide further embodiments. All U.S. patents, U.S. patent application publications, U.S. patent applications, foreign patents, foreign patent applications, and non-patent publications referred to in this specification and/or listed in the Application Data Sheet are adopted in their entirety Incorporated herein by reference. Aspects of the embodiments can be modified, if necessary, to employ concepts of the various patents, applications and publications to provide yet further embodiments.

These and other changes can be made to the embodiments in light of the above detailed description. In conclusion, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments, Along with the full range of equivalents to which these claims are entitled. Accordingly, the claims are not limited by this disclosure.

Claims (12)

1. A kind of 1. semiconductor package body, it is characterised in that including：

   Support substrate, the support substrate have first surface and second surface；

   Multiple non-conductive coupling elements, the multiple non-conductive coupling element are embedded in the substrate, the non-conductive coupling Element includes：

   Part I, the Part I have top surface, and the top surface and the top surface of the substrate are substantially coplanar, institute Part I is stated to extend in the substrate；And

   Part II, the Part II extend through the substrate to second table of the substrate from the Part I Face；

   First supporting zone, first supporting zone is on the first surface of the substrate in two non-conductive coupling members Between part；

   First nude film, first nude film are coupled to first supporting zone of the substrate in described two non-conductive couplings Between element；And

   Cap, the cap are coupled to the non-conductive coupling element, and the cap forms the chamber around first nude film.
2. 2. semiconductor package body as claimed in claim 1, it is characterised in that further comprise：

   Second supporting zone, second supporting zone is on the first surface of the substrate in described two non-conductive members Between one of part and the 3rd non-conductive component；And

   Second nude film, second nude film are coupled to second supporting zone.
3. 3. semiconductor package body as claimed in claim 2, it is characterised in that be coupled to the substrate first nude film and Second nude film is electrically coupled to the substrate.
4. 4. semiconductor package body as claimed in claim 3, it is characterised in that further comprise the cap with wall, the cap Lid is coupled to the non-conductive coupling element to form first chamber and second chamber, and it is naked that the first chamber surrounds described first Piece, and the second chamber surrounds second nude film.
5. 5. semiconductor package body as claimed in claim 1, it is characterised in that further comprise：

   Part III of the multiple non-conductive coupling element in the second surface of the substrate, each Part III with The corresponding Part I of the multiple non-conductive coupling element is opposite；And

   Multiple continuous non-conductive coupling elements of I shapes, the multiple continuous non-conductive coupling element of I shapes non-are led by the multiple The Part I of electric coupling element, the multiple non-conductive coupling element the Part II and these are non-conductive The Part III of coupling element is formed.
6. A kind of 6. semiconductor package body, it is characterised in that including：

   Substrate, the substrate have first surface and second surface；

   Multiple through holes, the multiple through hole pass through the substrate；

   Multiple first grooves, for the multiple first groove in the first surface of the substrate, each first groove is basic Go up parallel to each other and alignd with a number of through hole in the multiple through hole；

   Multiple second grooves, for the multiple second groove in the first surface of the substrate, each second groove is horizontal In the multiple first groove and overlapping with least one through hole in the through hole；And

   Non-conducting material, the non-conducting material are positioned at the multiple through hole, the multiple first groove and the multiple In second groove.
7. 7. semiconductor package body as claimed in claim 6, it is characterised in that the multiple first groove and the multiple through hole Form multiple continuous T-shaped holes.
8. 8. semiconductor package body as claimed in claim 6, it is characterised in that further comprise：

   Multiple 3rd grooves, the multiple 3rd groove is in the second surface of the substrate, each 3rd groove and institute State a number of through hole alignment in multiple through holes.
9. 9. semiconductor package body as claimed in claim 8, it is characterised in that the multiple first groove, the multiple through hole And the multiple 3rd groove forms multiple continuous I shapes holes.
10. 10. semiconductor package body as claimed in claim 9, it is characterised in that further comprise the institute in the multiple I shapes hole State the non-conducting material in I shapes hole.
11. 11. semiconductor package body as claimed in claim 10, it is characterised in that further comprise：

    Multiple 4th grooves, the multiple 4th groove is in the second surface of the substrate, each 4th channel lateral In the multiple 3rd groove and overlapping with least one through hole in the through hole.
12. 12. semiconductor package body as claimed in claim 7, it is characterised in that further comprise

    Cap, the cap are coupled to the non-conducting material in the T-shaped hole and the multiple second groove；

    Supporting zone, the supporting zone is by two first grooves in the multiple first groove and the multiple second groove In two second grooves surround；And

    Nude film, the nude film are coupled to the supporting zone, and the nude film is electrically coupled to the supporting zone.