CN206616266U - The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating - Google Patents

Abstract

The multi-stage magnetic field arc ion plating liner straight tube and porous baffle composite device belongs to the technical field of material surface treatment. loss problem. The device of the present invention includes: bias power supply, arc power supply, arc ion plating target source, multi-stage magnetic field device, multi-stage magnetic field power supply, lined positive bias straight tube and porous baffle composite device, positive bias power supply, Sample stage, bias power waveform oscilloscope and vacuum chamber; thin film deposition: connect the device, start the system, and when the vacuum degree in the vacuum chamber is less than 10 ^‑4 Pa, feed the working gas, turn on the coating power supply, and adjust the arc plasma by the bias power supply Eliminate large particle defects and improve the transmission efficiency of arc plasma in the multi-stage magnetic field filter device through the lined positive bias straight tube and porous baffle composite device and multi-stage magnetic field device, set process parameters, and prepare thin films .

Description

Composite device of lined straight pipe and porous baffle for multi-stage magnetic field arc ion plating

technical field

The invention relates to a multi-stage magnetic field arc ion plating liner straight pipe and porous baffle composite device, which belongs to the technical field of material surface treatment.

Background technique

In the process of preparing thin films by arc ion plating, because the arc spot current density is as high as 2.5~5×10 ¹⁰ A/m ² , molten liquid metal appears at the arc spot position on the target surface, and under the action of local plasma pressure Splashed out in the form of droplets, attached to the surface of the film or embedded in the film to form "Macroparticles" defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit time is greater than the number of ions, making large particles negatively charged. Compared with films with a thickness level of micron or submicron, large particle defects with a size of 0.1-10 microns are like PM2.5 pollution to air quality, which has serious harm to the quality and performance of the film. With the increasing application of thin film materials and thin film technology, the solution to the problem of large particle defects has become a bottleneck for the further development of arc ion plating, which seriously restricts its application in the preparation of new generation thin film materials.

At present, in order to solve the problem that the arc ion plating method is easy to produce large particle defects when using low-melting point pure metals or multi-element alloy materials, at present, the method of magnetic filtration is mainly used to filter out large particles, such as the plasma of the Chinese patent for material surface modification In the immersion ion implantation device (public number: CN1150180, date of publication: May 21, 1997), a 90° magnetic filter elbow is used to filter the large particles of the pulsed cathodic arc. American scholars Anders et al. (Anders S, Anders A, Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-674.) and Zhang Yujuan from Henan University (Zhang Yujuan, Wu Zhiguo , Zhang Weiwei et al. Effects of deposition conditions on film texture in the preparation of TiN films by magnetic filtration plasma. Chinese Journal of Nonferrous Metals. 2004, 14(8): 1264-1268.) In the article, "S" magnetic filter bends were fabricated To filter the large particles of the cathodic arc, there are also American scholars Anders et al. .) The magnetic filtration of the Twist filter proposed. Although these methods have certain effects in filtering and eliminating large particles, the transmission efficiency of the plasma is seriously lost, which greatly reduces the ion current density. On the basis of not only being able to filter large particles but also ensuring efficiency, the Chinese Patent Vacuum Cathode Arc Straight Tube Filter (publication number: CN1632905, publication date: June 29, 2005) proposes a straight tube filtration method, but this is Reduced filtering effect. In short, related researchers compared various magnetic filtration methods (Anders A. Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review[J]. Surf Coat Tech, 1999, 120-121319-330. and Takikawa H , Tanoue H. Review of cathodic arc deposition for preparing droplet-free thin films [J]. IEEE TransPlasma Sci, 2007, 35(4): 992-999.) found that the arc ion plating plasma maintains high transmission after passing through the magnetic filter device Efficiency and elimination of large particles are very difficult to balance, seriously hindering the application of this technology in high-quality thin film deposition. In addition, a biased electric field suppression method is used on the substrate. When a negative bias is applied to the substrate, the electric field will repel the negatively charged large particles, thereby reducing the generation of large particle defects on the film surface. German scholars Olbrich et al. (OlbrichW, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating properties using cathodic arc evaporation with a pulsed bias [J]. Surf CoatTech, 1991, 49(1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, EbberinkJ. Catholic arc deposition of TiN and Zr(C, N) at low substrate temperature using a pulsed bias voltage [J]. Mat Sci Eng A, 1991, 140: 830-837.) Using pulse bias voltage to replace the traditional DC bias voltage, a new physical vapor deposition technology - pulse bias voltage arc ion plating technology has been formed, which not only greatly reduces the number of large particles on the surface of the film, but also overcomes the traditional DC bias voltage The substrate temperature is too high and the internal stress of the film is relatively large. Lin Guoqiang from Dalian University of Technology et al. Influence mechanism of film surface morphology[J]. Acta Metallica Sinica, 2003, 39(5): 510-515.) conducted an in-depth analysis on the mechanism of the reduction of large particle defects caused by pulse bias voltage, through the pulse bias amplitude, The adjustment of process parameters such as frequency and pulse width can improve the motion characteristics of the arc plasma sheath, reduce the number of large particle defects on the surface of the film, and improve the quality of the film. It is widely used in actual production, but it still cannot completely eliminate large defects. Particle defects. Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji. Arc ion plating method combined with multi-stage magnetic field straight tube magnetic filtration and pulse bias voltage, publication number: CN103276362A, publication date: September 4, 2013) A multi-stage magnetic field straight tube magnetic filter and pulse bias composite arc ion plating method was proposed. The multi-stage magnetic field filter device was used to eliminate large particle defects and improve the transmission efficiency of the plasma. However, the pollution of the inner wall of the tube and the plasma on the inner wall of the tube The loss of body has not been well solved, and related scholars in the later period (Wei Yongqiang, Zong Xiaoya, Hou Junxing, Liu Yuan, Liu Xueshen, Jiang Zhiqiang, Fu Hanguang. Multi-stage magnetic field arc ion plating method for straight tubes lined with positive bias, Publication No. : CN105925940A, date of disclosure: September 7, 2016) A multi-stage magnetic field arc ion plating method for lining positive bias straight pipes is proposed to solve the pollution problem on the inner wall of the pipe. Some scholars proposed the method of double-layer baffle (Zhao Y, Lin G, Xiao J, Lang W, Dong C, GongJ, Sun C. Synthesis of titanium nitride thin films deposited by a newshielded arc ion plating [J]. Appl Surf Sci, 2011, 257(13): 5694-5697.), studied the effect of baffle spacing on the surface morphology of the film, the removal effect of large particles and the deposition rate. There are also scholars (Zhang Tao, Hou Junda, Liu Zhiguo, Zhang Yicong. Magnetically filtered cathodic arc plasma source and its thin film preparation [J]. China Surface Engineering, 2002, 02): 11-15+20-12. Method (Bilek M M M, Yin Y, McKenzie D R, Milne W I A M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:962-966 vol.2), applying a positive bias voltage on the elbow of the 90-degree elbow magnetic filter device to improve the transmission efficiency of the plasma.

Contents of the invention

The purpose of the present invention is to solve the traditional arc ion plating method using low-melting point pure metal or multi-element alloy material and non-metallic material (such as graphite) as the target material, which is easy to produce large particle defects, and the arc plasma transmission efficiency caused by the curved magnetic filter technology. Low-level problems, combined with the multi-stage magnetic field filtering method and the combination of the shape and structure of the lined positive bias straight tube and porous baffle composite device, the mechanical barrier shielding and the composite effect of positive bias electric field attraction eliminate arc plasma At the same time, ensure that the arc plasma passes through the multi-stage magnetic field filter device and the composite device lined with positive bias straight tube and porous baffle with high transmission efficiency, so that the surface of the workpiece can be continuous when negative bias is applied. , dense and high-quality film preparation, and at the same time realize the control of element content in the film, reduce the production cost of using alloy targets, improve the deposition efficiency of the film and reduce the adverse effects of large particle defects on the film growth and performance. A multi-level magnetic field arc is proposed. Ion-plating lined straight tube and porous baffle composite device.

The device used in the present invention includes a bias power supply 1, an arc power supply 2, an arc ion plating target source 3, a multi-stage magnetic field device 4, a multi-stage magnetic field power supply 5, a lined positive bias straight pipe and a composite device 6 of a porous baffle , a positive bias power supply 7, a sample stage 8, a bias power supply waveform oscilloscope 9 and a vacuum chamber 10;

In this device:

The workpiece to be processed is placed on the sample stage 8 in the vacuum chamber 10, and the composite device 6 is lined with a positive bias straight tube and a porous baffle plate, and the vacuum chamber 10 and the multi-stage magnetic field device 4 are insulated. The workpiece and the sample stage 8 Connect the negative output end of the bias power supply 1, the arc ion plating target source 3 is installed on the vacuum chamber 10, connect the negative output end of the arc power supply 2, and connect the magnetic fields of each level of the multi-stage magnetic field device 4 to each output of the multi-stage magnetic field power supply 5 terminal, the positive and negative pole connections can be determined according to the direction of the output magnetic field, the lined positive bias straight tube and porous baffle composite device 6 is connected to the positive output terminal of the positive bias power supply 7, and the external water cooling circulation system is turned on;

Thin film deposition: vacuumize the vacuum chamber 10, when the vacuum degree in the vacuum chamber 10 is less than 10 ^-4 Pa, feed the working gas to 0.01Pa ~ 10Pa, turn on the bias power supply 1 and the bias power waveform oscilloscope 9, and the bias voltage The bias amplitude, pulse frequency and pulse width output by power supply 1 are adjusted. The peak voltage value of the output pulse of bias power supply 1 is 0-1.2kV, the pulse frequency is 0Hz-80kHz, and the pulse width is 1-90%;

The arc power supply 2 is turned on, and the surface of the arc ion plating target source 3 is cleaned through the arc spot movement of the arc, and the required process parameters are adjusted. The magnetic field device 4 keeps the arc plasma stably generated in the arc ion plating target source 3 and filters and eliminates large particle defects, so that the arc plasma reaches the surface of the substrate through the multi-level magnetic field device 4 with high transmission efficiency, and the thin film is rapidly deposited. Deposition, arc ion plating target source 3 and multi-level magnetic field device 4 are water-cooled to avoid the problem of temperature rise during the working process;

The positive bias power supply 7 is turned on, the composite device 6 lined with positive bias straight tube and porous baffle maintains the DC positive bias, the output voltage is adjusted, and the composite device 6 is lined with positive bias straight tube and porous baffle for large particles Attract and repel the deposited ions, reduce the loss of the plasma in the process of transmission in the tube, improve the transmission efficiency of the plasma and the deposition speed of the film; lined with positive bias straight tube and porous baffle composite device 6 and multi-stage The magnetic field devices 4 are movable and insulated and assembled together, and the composite device 6 lined with positive bias straight pipes and porous baffles can be disassembled, cleaned and installed in time depending on the degree of surface contamination, avoiding the multi-stage magnetic field device 4 in the state of no liner. Contamination of the inner wall of the tube and difficulty in cleaning; the straight tube length H of the lined positive bias straight tube and porous baffle composite device 6 is the same as the length of the multi-stage magnetic field device 4, and the inner diameter D of the straight tube is larger than the arc ion plating target source 3, the outer diameter is smaller than the inner diameter of the multi-stage magnetic field device 4; the spacing of the porous baffles in the composite device 6 of the lined positive bias straight pipe and the porous baffle is matched with the length of the magnetic field of each level of the multi-stage magnetic field device 4 , the straight pipe and the porous baffle are fixed together by bolts and nuts. The porous baffle can match the inner diameter D of the straight pipe to design the baffle size, baffle spacing and structural combination. The baffle is fixed by bolts and nuts, which is convenient Disassembly and assembly and cleaning of pollutants, the size and type of pores in the porous baffle and the structural combination of all levels of baffles are selected according to different target materials and process parameters; lined with positive bias straight tube and porous baffle Composite device 6 The material of the straight pipe and the porous baffle can be non-magnetic and cleaning-resistant 304 stainless steel. The straight pipe should be selected according to the length and stiffness. The thickness of the porous baffle should be based on the size and type of the aperture and the structure layout of the baffles at all levels. , can be processed according to the actual design parameters; the voltage parameter of the positive bias power supply 7 is 0 ~ +200V, and the DC voltage power supply can generate continuous and stable attraction to large particle defects during the deposition process, greatly reducing the large particles passing through the multi-stage magnetic field Chance of device 4.

According to the needs of film preparation, adjust the relevant process parameters to prepare pure metal films, compound ceramic films with different element ratios, functional films and high-quality films with nano-multilayer or gradient structures.

Advantages of the present invention: a. The composite device lined with positive bias straight tube and porous baffle can effectively attract large particles, repel deposited ions, and reduce the loss of plasma in the process of transmission in the tube by applying positive bias voltage , to further improve the transmission efficiency of the arc plasma and the deposition rate of the film; b. The multi-stage magnetic field filter device can ensure the efficient transmission of the arc plasma through the magnetic field lines, and change the movement path of the large particle defects to eliminate the large particle defects in the arc plasma ; c. The composite device lined with positive bias straight tube and porous baffle can realize the mechanical barrier shielding effect through its own shape and structure combination, and limit the movement path of large particle defects to eliminate large particle defects in arc plasma; d. Adjust the pulse bias parameters, including amplitude, pulse width and frequency to adjust the arc plasma energy and eliminate the remaining large particle defects; e. The microstructure and performance of the prepared film can be adjusted by the pulse bias parameters Adjust the amplitude, pulse width and frequency of pulse bias to realize the pinning effect of high-energy ions on film growth, improve the crystal structure and stress state of film growth, and increase the bonding strength; f. The prepared film avoids large particles Defects, the thin film crystal structure is denser, which can further improve the mechanical properties of the film.

The multi-stage magnetic field arc ion plating lined straight tube and porous baffle composite device can be combined with traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc with DC bias, pulse bias High voltage or DC pulse composite bias device for thin film deposition to prepare pure metal thin films, compound ceramic thin films with different element ratios, functional thin films and high-quality thin films with nano-multilayer or gradient structures.

Description of drawings

Fig. 1 is the assembly diagram of the liner straight pipe and porous baffle composite device of multistage magnetic field arc ion plating of the present invention; Fig. 2 is the structure and disassembly of liner positive bias straight pipe and porous baffle composite device Diagram; Figure 3 is a diagram of a porous baffle structure and four typical porous baffles.

detailed description

Specific Embodiment 1: The present embodiment will be described below in conjunction with Fig. 1, Fig. 2 and Fig. 3. The device used in the lined straight pipe and porous baffle composite device of the multi-stage magnetic field arc ion plating in the present embodiment includes a bias power supply 1, Arc power source 2, arc ion plating target source 3, multi-stage magnetic field device 4, multi-stage magnetic field power source 5, composite device lined with positive bias straight tube and porous baffle 6, positive bias power source 7, sample stage 8, bias A piezoelectric source waveform oscilloscope 9 and a vacuum chamber 10;

In this device:

The workpiece to be processed is placed on the sample stage 8 in the vacuum chamber 10, and the composite device 6 is lined with a positive bias straight tube and a porous baffle plate, and the vacuum chamber 10 and the multi-stage magnetic field device 4 are insulated. The workpiece and the sample stage 8 Connect the negative output end of the bias power supply 1, the arc ion plating target source 3 is installed on the vacuum chamber 10, connect the negative output end of the arc power supply 2, and connect the magnetic fields of each level of the multi-stage magnetic field device 4 to each output of the multi-stage magnetic field power supply 5 terminal, the positive and negative pole connections can be determined according to the direction of the output magnetic field, the lined positive bias straight tube and porous baffle composite device 6 is connected to the positive output terminal of the positive bias power supply 7, and the external water cooling circulation system is turned on;

Thin film deposition: vacuumize the vacuum chamber 10, and when the vacuum degree in the vacuum chamber 10 is less than 10 ^-4 Pa, feed the working gas to 0.01Pa ~ 10Pa, turn on the bias power supply 1 and the bias power waveform oscilloscope 9, and adjust The bias voltage amplitude, pulse frequency and pulse width output by bias power supply 1, the peak voltage value of the output pulse of bias power supply 1 is 0-1.2kV, the pulse frequency is 0Hz-80kHz, and the pulse width is 1-90%;

The arc power supply 2 is turned on, and the surface of the arc ion plating target source 3 is cleaned through the arc spot movement of the arc, and the required process parameters are adjusted. The magnetic field device 4 keeps the arc plasma stably generated in the arc ion plating target source 3 and filters and eliminates large particle defects. The arc plasma reaches the surface of the substrate through the multi-level magnetic field device 4 with high transmission efficiency for rapid deposition of the film , the arc ion plating target source 3 and the multi-level magnetic field device 4 avoid the problem of temperature rise during the working process through water cooling;

The positive bias power supply 7 is turned on, the composite device 6 of the lined positive bias straight pipe and the porous baffle plate maintains the DC positive bias, and the output voltage is adjusted so that the lining positive bias straight pipe and the porous baffle composite device 6 are large Particles are attracted, the deposited ions are repelled, the loss of plasma in the process of transmission in the tube is reduced, and the transmission efficiency of plasma and the deposition speed of the film are improved; The multi-stage magnetic field devices 4 are assembled together with movable insulation, and the composite device 6 lined with positive bias straight pipes and porous baffles can be disassembled, cleaned and installed in time depending on the degree of surface pollution, avoiding the multi-stage magnetic field device 4 in the state of no liner The inner wall of the tube is polluted and difficult to clean; the straight tube length H of the lined positive bias straight tube and porous baffle composite device 6 is the same as the length of the multi-stage magnetic field device 4, and the inner diameter D of the straight tube is larger than the arc ion plating target The outer diameter of the source 3, the outer diameter is less than the inner diameter of the multistage magnetic field device 4; Matching, the straight pipe and the porous baffle are fixed together by bolts and nuts. The porous baffle can match the inner diameter D of the straight pipe to design the baffle size, baffle spacing and structural combination. The baffle is fixed by bolts and nuts. It is easy to disassemble and assemble and clean up pollutants. The size and type of pores in the porous baffle and the structural combination of all levels of baffles are selected according to different target materials and process parameters; the composite device is lined with positive bias straight pipe and porous baffle 6. The material of the straight pipe and porous baffle can be non-magnetic and cleaning-resistant 304 stainless steel. The straight pipe should be selected according to the length and rigidity. The thickness of the porous baffle should be based on the size, type and structure of the baffles at all levels. The layout can be processed according to the actual design parameters; the voltage parameter of the positive bias power supply 7 is 0 ~ +200V, which is a DC voltage, which can generate continuous and stable attraction to large particle defects during the deposition process, greatly reducing the number of large particles passing through multiple stages. Chance of magnetic field device 4.

The output waveform of the bias power supply 1 is direct current, single pulse, direct current pulse compound or multiple pulse compound.

The output of arc power source 2 is DC, single pulse, DC pulse composite or multi-pulse composite.

The arc ion plating target source 3 adopts high melting point or low melting point pure metal or multi-element alloy material, and can use a single target, multiple targets or composite targets to process pure metal thin films, compound ceramic thin films with different element ratios, functional thin films, multi-element and multi-element layers, superlattices, high-quality thin films with nano-multilayer or gradient structures.

The working gas is argon, or the working gas is a mixture of one or more of nitrogen, acetylene, methane, silane or oxygen to prepare pure metal films, compound ceramic films with different element ratios, functional films, multi-layers, Superlattices, thin films with nanoscale multilayer or gradient structures.

The multi-stage magnetic field arc ion plating lined straight pipe and porous baffle composite device can use the applied positive bias to attract large particles in the lined positive bias straight pipe and porous baffle composite device, effectively avoiding The problem of large particles produced by low melting point materials; at the same time, the deposited ions are repelled to reduce the loss of plasma during the transmission process in the composite device, and improve the transmission efficiency of plasma and the deposition speed of the film; the liner is positively biased straight tube The composite device with porous baffles can realize the mechanical blocking and shielding of large particle defects through the inner diameter of the straight pipe, the aperture size and type of the porous baffles, the structural combination of the baffles at all levels, and the structural combination of the composite device. Reduce the probability of large particles reaching the surface of the deposition sample through the composite device; the composite device lined with a positive bias straight tube and a porous baffle can be quickly disassembled and installed, avoiding the cleaning of the inner wall of the tube in a multi-stage magnetic field device without a liner problem; by adjusting the negative bias parameters applied to the workpiece, it is beneficial to improve the interval potential distribution of the plasma between the target bases, fully attract the composite plasma to move to the workpiece, and realize the rapid deposition of the film; at the same time, the arc ion plating technology is also used The stable and continuous generation of metal plasma with high ionization rate is beneficial to the chemical synthesis reaction of high ionization rate ions on the surface of the workpiece, and the preparation of compound ceramic films, functional films, multi-layers, superlattices and materials with different element ratios Films with gradient structures or pure metal films.

Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc with DC bias, pulse bias or DC pulse composite bias device for film deposition to prepare pure metal films, compound ceramic films with different element ratios, functional films and high-quality films with nano-multilayer or gradient structures.

Specific embodiment three: The difference between this embodiment and embodiment two is that the lined straight pipe of the multi-stage magnetic field arc ion plating is connected with the composite device of the porous baffle, the arc power supply 2 is turned on, and the multi-stage magnetic field power supply 5 is turned on and adjusted The multi-stage magnetic field device 4, the positive bias power supply 7 is turned on, the composite device 6 lined with a positive bias straight tube and the porous baffle maintains a DC positive bias, the bias power supply 1 is turned on, the process parameters are adjusted, and thin film deposition is performed to prepare a The multilayer structure films with different stress states, microstructures and element ratios are the same as the second embodiment.

Embodiment 4: The difference between this embodiment and Embodiment 1 is that the lined straight pipe of the multi-stage magnetic field arc ion plating is connected to the composite device of the porous baffle, the arc power supply 2 is turned on, and the multi-stage magnetic field power supply 5 is turned on and adjusted The multi-stage magnetic field device 4, the positive bias power supply 7 is turned on, the composite device 6 lined with a positive bias straight tube and the porous baffle maintains a DC positive bias, the bias power supply 1 is turned on, the process parameters are adjusted, and thin film deposition is performed, and combined Traditional DC magnetron sputtering, pulsed magnetron sputtering, traditional arc ion plating and pulsed cathodic arc and DC bias, pulse bias or DC pulse composite bias device for film deposition, preparation of different stress states, microstructures and elements The ratio of the multilayer structure film, the other is the same as the second embodiment.

Two or more sets of arc ion plating target source 3, multi-stage magnetic field device 4, lined positive bias straight pipe and porous baffle composite device 6 can be used to combine the lined straight pipe and porous baffle plate of multi-stage magnetic field arc ion plating The baffle composite device performs thin film deposition with various pure metal elements and multi-element alloy materials as targets, and combines traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc with DC bias , Pulse bias voltage or DC pulse composite bias voltage device for film deposition to prepare multi-layer structure films with different stress states, microstructures and element ratios.

Claims (8)

1. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating, it is characterised in that the device includes Grid bias power supply（1）, arc power（2）, arc ion plating target source（3）, multi-stage magnetic field device（4）, multi-stage magnetic field power supply（5）, liner Positive bias straight tube and perforated baffle hybrid device（6）, positively biased voltage source（7）, sample stage（8）, grid bias power supply kymographion （9）And vacuum chamber（10）, liner positive bias straight tube and perforated baffle hybrid device（6）With vacuum chamber（10）With multi-stage magnetic field dress Put（4）Between insulate；Pending substrate work-piece is placed in vacuum chamber（10）Interior sample stage（8）On, workpiece and sample stage（8）Connect partially Voltage source（1）Cathode output end, arc ion plating target source（3）Installed in vacuum chamber（10）On, connect arc power（2）Negative pole it is defeated Go out end, multi-stage magnetic field device（4）Magnetic fields at different levels connect multi-stage magnetic field power supply（5）Each output end, both positive and negative polarity connection is according to defeated Go out magnetic direction to be determined, liner positive bias straight tube and perforated baffle hybrid device（6）Connect positively biased voltage source（7）Positive pole Output end, arc ion plating target source（3）With multi-stage magnetic field device（4）The temperature in the course of work is avoided to raise by water-cooling pattern Problem.

2. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its It is characterised by, liner positive bias straight tube and perforated baffle hybrid device（6）With multi-stage magnetic field device（4）Between activity insulation dress With together, liner positive bias straight tube and perforated baffle hybrid device（6）Apparent surface pollution level is dismantled cleaning and pacified in time Dress, it is to avoid multi-stage magnetic field device under linerless board status（4）Inside pipe wall pollution and the problem of be difficult to clear up；Liner positively biased straightening Pipe and perforated baffle hybrid device（6）Length of straight pipeHWith multi-stage magnetic field device（4）Length it is identical, the internal diameter of straight tubeDGreatly In arc ion plating target source（3）External diameter, external diameter be less than multi-stage magnetic field device（4）Internal diameter；Liner positive bias straight tube and porous Baffle plate hybrid device（6）In perforated baffle spacing and multi-stage magnetic field device（4）Length of magnetic field at different levels be engaged, straight tube and Perforated baffle is connected and fixed by bolt and nut, and perforated baffle coordinates the internal diameter of straight tubeDDesign between baffle plate size, baffle plate Away from being combined with structure, baffle plate is bolted and carries out position using nut and fixes, and is easy to disassemble assembling and cleaning pollutant, The structure combination of pore size, type and baffle plate at different levels in perforated baffle is selected according to different targets and technological parameter； Liner positive bias straight tube and perforated baffle hybrid device（6）The material of middle straight tube and perforated baffle selects nonmagnetic, resistance to cleaning 304 stainless steel materials, straight tube needs to select suitable thickness according to length and rigidity, perforated baffle according to the size in aperture, The topology layout of type and baffle plate at different levels, is processed according to actual design parameter.

3. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its It is characterised by, in coating process, coordinates grid bias power supply（1）, arc power（2）, arc ion plating target source（3）, multi-stage magnetic field dress Put（4）With multi-stage magnetic field power supply（5）Use, positively biased voltage source（7）Open, liner positive bias straight tube and the compound dress of perforated baffle Put（6）Direct current positive bias is kept, using electric field inhibiting mechanism, negatively charged bulky grain is carried out effectively to attract to remove, to band The depositing ions of positive charge repel, and improve the efficiency of transmission of exit plasma；Positively biased voltage source（7）Adjust output voltage, Liner positive bias straight tube and perforated baffle hybrid device（6）Bulky grain is attracted, depositing ions are repelled, is reduced Loss of the plasma in hybrid device transmitting procedure, improves the efficiency of transmission of plasma and the deposition velocity of film； Positively biased voltage source（7）Voltage be 0 ~+200V, DC voltage power supply, in deposition process to bulky grain defect produce continue Stable attraction, greatly reduces bulky grain and passes through multi-stage magnetic field device（4）Reach the probability of film surface.

4. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its It is characterised by, institute's use device also includes grid bias power supply kymographion（9）, show grid bias power supply（1）The pulse voltage sent And current waveform, by adjusting grid bias power supply（1）Output waveform, to the liner straight tube from multi-stage magnetic field arc ion plating and many The plated film ion transmitted in the baffle plate hybrid device of hole is effectively attracted, and carries out deposition and the control of sample surfaces film The ratio of deposition targets element in the film, realizes that the regulation of plasma energy and the bulky grain defect of residual carry out electric field Repel and remove.

5. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its It is characterised by, grid bias power supply（1）Output pulse is pulse, DC pulse is compound or multiple-pulse is compound.

6. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its Be characterised by, the device with it is single cover or many set combinations come prepare simple metal film, different element ratios compound ceramic it is thin Film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.

7. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its It is characterised by, the device is combined using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode Arc is combined biasing device with Dc bias, pulsed bias or DC pulse and carries out thin film deposition, to prepare simple metal film, difference Compound ceramic film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure of element ratio.

8. the liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating according to claim 1, its It is characterised by, working gas selects argon gas, or working gas to select one or more in nitrogen, acetylene, methane, silane or oxygen Mixed gas, to prepare simple metal film, the compound ceramic film of different element ratio, function film and many with nanometer The high-quality thin-film of layer or gradient-structure.