CN206542386U - FBAR and communication device based on insulator silicon chip - Google Patents
FBAR and communication device based on insulator silicon chip Download PDFInfo
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- CN206542386U CN206542386U CN201621463794.6U CN201621463794U CN206542386U CN 206542386 U CN206542386 U CN 206542386U CN 201621463794 U CN201621463794 U CN 201621463794U CN 206542386 U CN206542386 U CN 206542386U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 37
- 239000010703 silicon Substances 0.000 title claims abstract description 37
- 239000012212 insulator Substances 0.000 title claims abstract description 27
- 238000004891 communication Methods 0.000 title claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000012528 membrane Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- UPIXZLGONUBZLK-UHFFFAOYSA-N platinum Chemical compound [Pt].[Pt] UPIXZLGONUBZLK-UHFFFAOYSA-N 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 4
- 230000002401 inhibitory effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010923 batch production Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The utility model proposes a kind of FBAR (FBAR) and communication device based on insulator silicon chip.The acoustic resonator includes silicon substrate, silica membrane, piezoelectric thin film transducer stacked structure, and piezoelectric thin film transducer stacked structure includes top electrode, piezoelectric layer, hearth electrode successively from top to bottom；The piezoelectric thin film transducer stacked structure is placed in the cavity of the insulator silicon chip, and bonded layer is also included between piezoelectric thin film transducer and the insulator silicon chip；The piezoelectric thin film transducer stacked structure and insulator silicon chip are collectively forming closed cavity structure.Compared to other film bulk acoustic resonator structures, the utility model uses default cavity structure, advantageously reduces the adhesion formed in traditional cavity etching process and mechanical structure fracture, damage, can effectively improve device production yield, is adapted to batch production.Because prefabricated cavity width is more than the horizontal width of piezoelectric thin film transducer stacked structure, the design also can have good inhibiting effect to the transverse noise of FBAR, so as to improve device performance.
Description
Technical field
The utility model is related to a kind of wireless communication RF front-end devices, particularly FBAR (FBAR).
Background technology
Since 21st century, the Rapid Expansion in consumer electronics product and person communication system market is caused
To the very big demand of wireless communication system (such as palm PC, mobile phone, navigation system, satellite communication and various data communication).
Since particularly nearly 2 years, with the issue of the third generation and forth generation communication standard, the developing trend of individual radio communication system
It is integrated into by increasing functional module in wireless terminal.Present mobile phone not only needs basic call and short message work(
Can, in addition it is also necessary to have the functions such as GPS navigation, web page browsing, video/audio broadcasting, photograph and live tv reception.Further, since going through
The reason such as history and area causes the presence of various wireless communication standards so that need integrated a variety of moulds in the mobile phone for using new standard
Formula, multiple frequency ranges realize the trans-regional roaming between country to facilitate.More than it is a variety of so that the development of radio communication is towards increasing
Plus functional module, reduction system size, reduce cost and the direction of power consumption is developed.Therefore, prepare high-performance, small size, it is low into
Originally the radio system with low-power consumption just turns into a focus of research.
In the past few years, developing rapidly with RF IC (RFIC) technology, some are previously used for communication
Discrete component in system, such as low-noise amplifier (LNA) and intermediate-frequency filter (IF), it is already possible to integrated using radio frequency
The mode of circuit is realized；But the radio-frequency oscillator of other components, such as Low phase noise (RF Oscillator) and radio-frequency front-end
Wave filter (RF Filter) etc., is but still difficult to realize by the way of RF IC.On the other hand, with MEMS skills
The development of art, some use RF Components prepared by MEMS technology, such as RF switch (RF Switch), radio frequency inductive (RF
Inductor) and rf-resonator (RF Resonator) etc., obtained due to the premium properties that it has extensive research and
Using.FBAR (Film Bulk Acoustic Resonator, FBAR) is that research recent years is awfully hot
A kind of use MEMS technology realize rf-resonator.It is produced on silicon or GaAs substrate, mainly by metal electrode/
A kind of device that piezoelectric membrane/metal electrode is constituted.Under some specific frequencies, FBAR devices are shown as quartz crystal is humorous
The same resonance characteristic of the device that shakes, therefore oscillator or wave filter can be built into applied in modern communication systems.Relative to biography
System is used for constituting LC oscillators, ceramic dielectric resonator and surface acoustic wave (SAW) device of bandpass filter and microwave generating source
For, FBAR device is except with small size, low-power consumption, low insertion loss and senior engineer's working frequency
Outside the advantage of (0.5GHz-10GHz), it is often more important that its preparation technology can be compatible with CMOS technology, thus can with it is outer
Enclose circuit and constitute system-on-a-chip, greatly reduce the size and power consumption of system.
Radio-frequency oscillator based on FBAR devices mainly has low power consumption and small volume and can be compatible with standard CMOS process
Feature, the Single-Chip Integration of feasible system.It is this kind of with the improvement to FBAR device frequency temperature coefficient
Oscillator has very big ample scope for abilities in the RF system for need low power consumption and small volume.
The preparation technology of FBAR device is for other MEMSs and uncomplicated, prepares at present
FBAR is mainly completed by sacrificial layer surface technique or back etch process.Sacrificial layer surface technique is main
By the use of the material such as phosphosilicate glass or silica as filling sacrifice layer, piezoelectric thin film transducer stacked structure is deposited on it
Surface.The later stage of technique removes sacrifice layer to reach the purpose to form cavity.The problem of sacrificial layer surface technique is main
It is that sacrifice layer can not be removed thoroughly, a certain degree of adhesion can be caused, so as to influences the performance of device.And back etch process master
If by carrying out body silicon etching in wafer rear, so that at the back side for the piezoelectric thin film transducer stacked structure that front is formed
In cavity environment.The subject matter of back-etching technique is to need layer of silicon dioxide plus one layer of silicon nitride film thin as piezoelectricity
The supporting layer of film transducer stacked structure so that device avoids etching the erosion of industry in technique productions.But such design
It is easy to produce larger stress, fold and rupture, the performance of meeting extreme influence device easily occurs in device.Remaining answer is not solved
The problem of power, it can not just prepare high performance FBAR devices.
Utility model content
Discharge difficult to overcome in the cavity scheme that the structure formed in above-mentioned prior art formed with sacrifice layer, with
And back etches the problems such as stresses of parts caused is concentrated, the utility model proposes a kind of based on the insulator silicon substrate with cavity
FBAR (FBAR).Due to being bonded together to form using insulator silicon chip with piezoelectric thin film transducer stacked structure
The cavity of closing, so as to avoid above-mentioned technical problem.Further, since prefabricated cavity width is more than piezoelectric thin film transducer heap
The horizontal width of stack structure, the design also can have good inhibiting effect to the transverse noise of FBAR, so that
Improve device performance.
Specifically, the scheme that the utility model is proposed is as follows：
A kind of FBAR based on insulator silicon chip, it is characterised in that：
The resonator includes insulator silicon chip and piezoelectric thin film transducer stacked structure with cavity；The piezoelectricity is thin
Film transducer stacked structure includes top electrode, piezoelectric and hearth electrode, wherein top electrode, piezoelectric, hearth electrode heap successively
Folded, the piezoelectric thin film transducer stacked structure is placed in the cavity of the insulator silicon chip, the piezoelectric thin film transducer
Also include bonded layer between insulator silicon chip；The common shape of the piezoelectric thin film transducer stacked structure and insulator silicon chip
Into closed cavity structure.
Further, the top electrode, the hearth electrode extension it is in the same plane.
Further, the top electrode, the hearth electrode include one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or
Combination.
Further, the piezoelectric includes aluminium nitride (AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), tantalic acid
Lithium (LiTaO3) one of or combination.
Further, the width of the cavity is more than the horizontal width of the piezoelectric thin film transducer stacked structure.
Further, the bonded layer includes metal level.
The utility model also proposes a kind of communication device, including the FBAR that the utility model is proposed.
Brief description of the drawings
Fig. 1 is the structural representation of the FBAR (FBAR) of the utility model wherein embodiment；
Fig. 2 is the piezoelectric thin film transducer stacked structure schematic diagram of the utility model wherein embodiment；
Fig. 3 is the schematic diagram of the insulator silicon chip with cavity of the utility model wherein embodiment；
Fig. 4 is the piezoelectric thin film transducer stacked structure of the utility model wherein embodiment and the insulator silicon with cavity
The schematic diagram of substrate bonding；
Fig. 5 is the schematic diagram that the utility model wherein embodiment bonding back substrate is peeled off.
Embodiment
Embodiment 1
The utility model proposes a kind of FBAR (FBAR).As Figure 1-5, it includes：Band cavity
Insulating substrate 1, the insulating substrate is, for example, SOI Substrate；The piezoelectric thin film transducer stacked structure 2 being placed in cavity, the heap
Stack structure 2 includes top electrode 21, piezoelectric material layer 22, hearth electrode 23, and trilaminate material is stacked gradually.Wherein top electrode 21, bottom are electric
Pole 23 is bonded with insulating substrate, forms closed cavity, realizes that FBAR (FBAR) is filtered.Finally, push up
Electrode 21, hearth electrode 23 are in same level, are easy to connecting lead wire to test.
In the present embodiment, the material of top electrode 21 can be one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or group
Close；The material of hearth electrode 23 can be one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or combination.
Include one layer of cushion 24,50-500 nanometers of thickness on transfer base substrate 25.It will be understood by those skilled in the art that
Substrate in the present embodiment it is common for silicon substrate, can also be glass substrate, organic material substrate, quartz substrate or its
It all be applied to prepare the carrier substrates material of FBAR (FBAR).Cushion 24 in the present embodiment is used
In later separation transfer base substrate and FBAR (FBAR), the material of the cushion can be silica, nitridation
Silicon, silicon oxynitride, the material such as phosphoric acid glass.According to actual process, can in silica membrane Doped ions, such as phosphorus,
Fluorine, carbon, boron etc., preferably to etch.
Hearth electrode 23, is formed and graphical by Conventional deposition processes, can be applied to the hearth electrode material of the present embodiment
Can be one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or combination, the thickness of hearth electrode 23 is between 100-2000 nanometers.
Piezoelectric membrane 22, is formed by the piezoelectric membrane for depositing high C axis oriented, skilled person will appreciate that, it can wrap
Include the methods such as physical vapour deposition (PVD), chemical vapor deposition, reactive radio frequency magnetron sputtering, ald.Wherein, piezoelectric membrane material
Material can be aluminium nitride (AlN), zinc oxide (ZnO), lithium nickelate (LiNbO3), lithium tantalate (LiTaO3) one of or combination.
Piezoelectric membrane it is graphical, reactive ion etching or wet-etching technology can be used to etch pressure in the present embodiment
Conductive film, forms the through hole for drawing hearth electrode.
Top electrode 21, is formed, and be lithographically formed required figure by depositing.Top electrode material can be white for tungsten, molybdenum, platinum
One of gold, ruthenium, iridium, titanium tungsten, aluminium or combination, thickness are 100-2000 nanometers.
Insulator silicon chip with cavity；The cavity of the insulator silicon chip can be formed by dry etching, cavity
Size should match with piezoelectric thin film transducer stacked structure.Preferential, in the utility model, the width of cavity is more than piezoelectricity
The horizontal width of transducer stacked structure, to improve the inhibitory action to the transverse noise of FBAR, so as to carry
High device performance.
FBAR of the present utility model, including the insulator silicon chip with cavity is changed with piezoelectric membrane
Energy device stacked structure is bonded, and is made an entirety and is formed closed cavity.
Cushion 24 is applied to peel off the carrier substrates of FBAR from device, forms complete thin-film body
Acoustic resonator (FBAR) structure.Top electrode 21, hearth electrode 23 are ultimately at same water on the insulator silicon chip with cavity
Plane, facilitates connecting lead wire to test.
Normally, the insulation silicon chip with cavity in the utility model, be respectively from top to bottom silicon, silica (BOX),
Silicon substrate.
Using dry method or wet etching insulator silicon chip formation cavity, the transverse width of cavity is changed more than piezoelectric membrane
The transverse width of energy device stacked structure.
The present embodiment further relates to being bonded for the insulator silicon chip with cavity and piezoelectric thin film transducer stacked structure, is bonded
Layer be included in cavity insulator silicon substrate surface deposition layer of metal material 14, metal material 14 can for tungsten, molybdenum,
One of platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or combination, thickness are 100-2000 nanometers.By the insulator silicon chip with cavity
Metal level 14 alignd with top electrode 21, the metal of hearth electrode 23 of piezoelectric thin film transducer stacked structure, pass through metal bonding work
Both are bonded as a device by skill.
The FBAR that the utility model is proposed is widely used in communication device, for example：Strength
Device, wave filter and duplexer.
The utility model is the film bulk acoustic of new CMOS complementary metal-oxide-semiconductor (CMOS) process compatible
Resonator (FBAR), it, which is designed, solves the realization that long-standing problem the cavity design of FBAR (FBAR) field
Problem.Due to its novel bonding structure, can effectively avoid the adhesion of FBAR surface sacrificial process with
And the stress problem of back-etching technique.
Although the utility model is described in detail above, the utility model not limited to this, the art
Technical staff can carry out various modifications according to principle of the present utility model.Therefore, it is all to be made according to the utility model principle
Modification, all should be understood to fall into protection domain of the present utility model.
Claims (7)
1. a kind of FBAR based on insulator silicon chip, it is characterised in that：
The resonator includes insulator silicon chip and piezoelectric thin film transducer stacked structure with cavity；The piezoelectric membrane is changed
Energy device stacked structure includes top electrode, piezoelectric and hearth electrode, and wherein top electrode, piezoelectric, hearth electrode is stacked gradually, institute
State piezoelectric thin film transducer stacked structure to be placed in the cavity of the insulator silicon chip, the piezoelectric thin film transducer and insulation
Also include bonded layer between body silicon chip；The piezoelectric thin film transducer stacked structure and insulator silicon chip are collectively forming closing
Cavity structure.
2. FBAR according to claim 1, it is characterised in that：The top electrode, the hearth electrode
Extension is in the same plane.
3. FBAR according to claim 1, it is characterised in that：The top electrode, the hearth electrode bag
Include one of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium or combination.
4. FBAR according to claim 1, it is characterised in that：The piezoelectric includes aluminium nitride
(AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), lithium tantalate (LiTaO3) one of or combination.
5. FBAR according to claim 1, it is characterised in that：The width of the cavity is more than the pressure
The horizontal width of conductive film transducer stacked structure.
6. FBAR according to claim 1, it is characterised in that：The bonded layer includes metal level.
7. a kind of communication device, including the FBAR described in claim any one of 1-5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621463794.6U CN206542386U (en) | 2016-12-29 | 2016-12-29 | FBAR and communication device based on insulator silicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621463794.6U CN206542386U (en) | 2016-12-29 | 2016-12-29 | FBAR and communication device based on insulator silicon chip |
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| Publication Number | Publication Date |
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| CN206542386U true CN206542386U (en) | 2017-10-03 |
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| CN201621463794.6U Active CN206542386U (en) | 2016-12-29 | 2016-12-29 | FBAR and communication device based on insulator silicon chip |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108923766A (en) * | 2018-02-05 | 2018-11-30 | 珠海晶讯聚震科技有限公司 | Monocrystalline piezoelectric rf-resonator and filter with improved cavity |
| WO2020199508A1 (en) * | 2019-04-04 | 2020-10-08 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic resonator and manufacturing method thereof, filter, and radio frequency communication system |
| CN114314494A (en) * | 2020-09-28 | 2022-04-12 | 意法半导体股份有限公司 | Thin film piezoelectric microelectromechanical structure with improved electrical properties and corresponding fabrication process |
-
2016
- 2016-12-29 CN CN201621463794.6U patent/CN206542386U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108923766A (en) * | 2018-02-05 | 2018-11-30 | 珠海晶讯聚震科技有限公司 | Monocrystalline piezoelectric rf-resonator and filter with improved cavity |
| CN108923766B (en) * | 2018-02-05 | 2022-02-22 | 珠海晶讯聚震科技有限公司 | Single crystal piezoelectric RF resonator and filter with improved cavity |
| WO2020199508A1 (en) * | 2019-04-04 | 2020-10-08 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic resonator and manufacturing method thereof, filter, and radio frequency communication system |
| CN111786649A (en) * | 2019-04-04 | 2020-10-16 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and radio frequency communication system |
| CN111786649B (en) * | 2019-04-04 | 2022-03-04 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and radio frequency communication system |
| CN114314494A (en) * | 2020-09-28 | 2022-04-12 | 意法半导体股份有限公司 | Thin film piezoelectric microelectromechanical structure with improved electrical properties and corresponding fabrication process |
| US12225824B2 (en) | 2020-09-28 | 2025-02-11 | Stmicroelectronics S.R.L. | Process for manufacturing a thin-film piezoelectric microelectromechanical structure having improved electrical characteristics |
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