CN206412357U - Three-dimensional glass induction structure - Google Patents
Three-dimensional glass induction structure Download PDFInfo
- Publication number
- CN206412357U CN206412357U CN201720109885.8U CN201720109885U CN206412357U CN 206412357 U CN206412357 U CN 206412357U CN 201720109885 U CN201720109885 U CN 201720109885U CN 206412357 U CN206412357 U CN 206412357U
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- Prior art keywords
- inductance
- dimensional
- cabling
- input
- matrix
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- 239000011521 glass Substances 0.000 title claims abstract description 30
- 230000006698 induction Effects 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000011159 matrix material Substances 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims abstract description 19
- 239000011241 protective layer Substances 0.000 claims abstract description 9
- 238000009826 distribution Methods 0.000 claims abstract description 3
- 238000000926 separation method Methods 0.000 claims abstract description 3
- 230000001681 protective effect Effects 0.000 claims description 27
- 238000010276 construction Methods 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000000696 magnetic material Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Coils Or Transformers For Communication (AREA)
Abstract
The utility model provides a kind of three-dimensional glass induction structure, including a matrix, and being made on a surface of described matrix has metal wiring layer, and covers on one surface of matrix and metal wiring layer a protective layer；Opening is set on the protection layer, is exposed inductance cabling and input and output cabling on metal wiring layer, is used as inductance coil node；Each inductance coil node separation distribution；Two adjacent inductance cablings are gradually connected using the three-dimensional inductance metal camber line arched upward upwards, a cascaded structure is formed；The input and output cabling is located at the both sides of cascaded structure；Also using three-dimensional inductance metal camber line connection between the inductance cabling and input and output cabling at the cascaded structure two ends.The utility model realizes three-dimensional induction structure using three-dimensional inductance metal camber line, and inductance performance can be substantially improved.
Description
Technical field
The utility model is related to wafer level semiconductor technical field, especially a kind of three-dimensional glass induction structure.
Background technology
Existing wafer level semiconductor technique is that crystal column surface metal interconnection is realized using process meanses such as PVD, plating,
Existing on-chip inductor structure is typically all the wire coil of two dimension, and inductance performance is extremely restricted, although complex process, but
It is that such interconnection architecture is hardly formed high-quality inductance.
The inductor of general surface mount kenel (surface mount type, SMT) is because size is larger and cost high
It is expensive, it is not suitable for the large-scale application as integrating packaging module.Therefore, development is provided simultaneously with small size, low cost, can provided
The inductance of high-quality performance is extremely necessary.
The content of the invention
The purpose of this utility model is to overcome the weakness of existing wafer scale inductance lower quality, and there is provided a kind of three-dimensional glass
Induction structure, realizes three-dimensional induction structure, and inductance performance can be substantially improved using three-dimensional inductance metal camber line.This practicality is new
Type use technical scheme be：
A kind of three-dimensional glass induction structure, including a matrix, being made on a surface of described matrix has metal line
Layer, and cover on one surface of matrix and metal wiring layer a protective layer；
Opening is set on the protection layer, is exposed inductance cabling and input and output cabling on metal wiring layer, is used as inductor wire
Enclose node；Each inductance coil node separation distribution；
Two adjacent inductance cablings are gradually connected using the three-dimensional inductance metal camber line arched upward upwards, a series connection is formed
Structure；The input and output cabling is located at the both sides of cascaded structure；Inductance cabling and the input and output at the cascaded structure two ends are walked
Also using three-dimensional inductance metal camber line connection between line；
Described three-dimensional glass induction structure also includes a protective cap, and the protective cap covers all three-dimensional inductance gold
Belong to camber line.
Further, described matrix uses glass basis or sapphire substrates or ceramic matrix.
Further, the protective cap is hollow-core construction, and the input and output cabling is extended out on the outside of protective cap.
Or, the protective cap is solid construction, including protective cap also covers input and output cabling；Input and output cabling
Draw another surface for being connected to matrix by the conductive through hole in matrix.
Further, the inductance cabling is longitudinally oriented arranged in parallel, and three-dimensional inductance metal camber line diagonally connects adjacent two
Root inductance cabling.
Further, three-dimensional inductance metal camber line, which arches upward, fills magnetic material in region.
Further, one or more three-dimensional inductance metal camber line is connected between adjacent inductance coil node.
A kind of manufacture craft of three-dimensional glass induction structure, comprises the following steps：
Step S1 makes metal wiring layer there is provided glass basis on a surface of glass basis, and in glass basis
A protective layer is covered on one surface and metal wiring layer；
Step S2, then sets opening on the protection layer, exposes inductance cabling and input and output cabling on metal wiring layer,
It is used as inductance coil node；Inductance coil node includes inductance cabling and input and output cabling；The inductance cabling exposed is longitudinally walked
To arranged in parallel；
Step S3, the connection of adjacent inductive coil node is realized using lead key closing process；It is specific to use what is arched upward upwards
Three-dimensional inductance metal camber line gradually connects two adjacent inductance cablings by lead key closing process, forms a cascaded structure；
Wire bonding is also passed through using three-dimensional inductance metal camber line between the inductance cabling and input and output cabling at the cascaded structure two ends
Technique is connected；
Input and output cabling is located at the both sides of cascaded structure；It is laterally distributed；
Step S4, sets a protective cap, including all three-dimensional inductance metal camber line maskings.
Further, the protective cap in step S4 is hollow-core construction, and input and output cabling is extended out on the outside of protective cap；
Or, the protective cap in step S4 is solid construction, by all three-dimensional inductance metal camber lines and input and output
Cabling is encapsulated in protective cap；Also include after step S4：
Step S5, convinces electric through-hole by patient analysis, and filled out in conductive through hole from another surface of glass basis in glass basis
Fill conducting metal so that conductive through hole electrically connects input and output cabling.
Further, in step S3, three-dimensional inductance metal camber line diagonally connects adjacent two inductance cablings；Adjacent inductance
One or more three-dimensional inductance metal camber line is connected between coil node.
The utility model has the advantage of：The wafer scale high-performance induction structure of micro-structure is realized, innovative should
High-quality three-dimensional induction structure is realized with three-dimensional inductance metal camber line, than existing wafer scale surface two-dimensional helical wiring technique
The infrastructure cost of making is lower, while increasing protection structure to camber line structure, finally gives simple in construction, the three-dimensional of reliable in quality
Induction structure.
Brief description of the drawings
Fig. 1 is step S1 and the S2 schematic diagram of the utility model embodiment one.
Fig. 2 is the step S3 wire bonding schematic diagrames of the utility model embodiment one.
Fig. 3 is the structure depression angle schematic diagram of embodiment one of the present utility model.
Fig. 4 is the protective cap schematic diagram that sets in embodiment one of the present utility model.
Fig. 5 is the protective cap schematic diagram that sets in embodiment two of the present utility model.
Embodiment
With reference to specific drawings and examples, the utility model is described in further detail.
Embodiment one,
The three-dimensional glass induction structure that the present embodiment is proposed, is made by following steps：
Step S1, as shown in Figure 1 there is provided glass basis 1, metal wiring layer 2 is made on a surface of glass basis 1
（RDL layer）, and cover on one surface of glass basis 1 and metal wiring layer 2 protective layer 3；
The material of matrix 1 is preferred to use glass；Because the dielectric constant of glass material is better than the dielectric constant of silicon chip, so adopting
High-quality inductance will be obtained with glass material；
The mixing material that the material of matrix 1 also can select sapphire, ceramic or the former is with glass；Protective layer 3 can be used
Solder resist material；
Step S2, then sets opening on protective layer 3, exposes inductance cabling 201 and input and output on metal wiring layer 2
Cabling 202, is used as inductance coil node；In this example, inductance coil node includes inductance cabling 201 and input and output cabling 202；
The opening of protective layer 3 can be formed by etching technics；
The inductance cabling 201 exposed be longitudinally oriented it is arranged in parallel, and input and output cabling 202 be located at 201 liang of inductance cabling
Side；
Step S3, as shown in Fig. 2 realizing the connection of adjacent inductive coil node using lead key closing process；It is specific to use
The three-dimensional inductance metal camber line 4 arched upward upwards gradually connects two adjacent inductance cablings 201 by lead key closing process, is formed
One cascaded structure；Also using three-dimensional inductance gold between the inductance cabling 201 and input and output cabling 202 at the cascaded structure two ends
Category camber line 4 is connected by lead key closing process；
Connected by 3-dimensional metal camber line 4 below two adjacent nodes, the camber line due to using air as medium, because
It is the current material for being only second to vacuum for the dielectric constant of air, so the inductance realized by the structure, can also be realized more
Excellent inductance performance；
The three-dimensional material of inductance metal camber line 4 is gold, silver, copper, aluminium and using frontside material as the alloy material of main component；
Three-dimensional inductance metal camber line 4 can be line style or banding pattern；
In this step, it is preferable that three-dimensional inductance metal camber line 4 diagonally connects adjacent two inductance cablings 201, can increase
Inductance value；As shown in Figure 3；
One or more three-dimensional inductance metal camber line 4 can be connected between adjacent inductance coil node；Connect many three-dimensionals
On the one hand inductance metal camber line 4 can increase inductance value, on the other hand play certain redundancy effect；
Input and output cabling 202 is located at the both sides of cascaded structure；It is laterally distributed；
Optional step S301, the filling magnetic material in the region 401 of arching upward of three-dimensional inductance metal camber line 4, by drawing
Enter magnetic material, can greatly improve the inductance value of inductance, meet more high-end demand；
Step S4 a, as shown in figure 4, protective cap 5 is set, including all three-dimensional inductance metal camber lines 4 are covered；Should
Protective cap 5 ensures influence of the 3-dimensional metal camber line 4 in the structure from external environment, further improves product quality and reliable
Property；
In this example, protective cap 5 is hollow-core construction, and three-dimensional inductance metal camber line 4 is played a protective role；And input and output
Cabling 202 as inductance input/output port, it is necessary to extend out to the outside of protective cap 5；
Embodiment two,
Step S1, S2, S3, be the same as Example one；
The present embodiment and the main distinction of embodiment one be,
1）Step S301 is not needed；
2）In step s 4, the protective cap 5 of a solid construction is set；Capsulation material or other encapsulating material shapes can be used
Into the protective cap 5 of solid construction, all three-dimensional inductance metal camber lines 4 and input and output cabling 202 are encapsulated in protective cap
It is interior；As shown in Figure 5；
Then step S5 is carried out, electric through-hole 6 is convinced by patient analysis in matrix 1 from another surface of matrix 1, and in conductive through hole 6
Interior filling conducting metal so that the electrical connection input and output of conductive through hole 6 cabling 202；
Convince by patient analysis electric through-hole 6 technique can using dry etching or wet etching, can also use laser boring by the way of；
Input and output cabling 202 can draw another surface for being connected to matrix 1 by the conductive through hole 6 in matrix 1；
The actual XY of product will be made by way of conductive through hole 6 leads to the back side to size reduction to minimum value, further
The cost performance of product is improved, reduces the area of product.
Claims (7)
1. a kind of three-dimensional glass induction structure, including a matrix (1), it is characterised in that：
Being made on a surface of described matrix (1) has metal wiring layer (2), and in one surface of matrix (1) and gold
A protective layer (3) is covered on category wiring layer (2)；
Opening is set on protective layer (3), exposes inductance cabling (201) and input and output cabling on metal wiring layer (2)
(202), as inductance coil node；Each inductance coil node separation distribution；
Two adjacent inductance cablings (201) are gradually connected using the three-dimensional inductance metal camber line (4) arched upward upwards, one is formed
Cascaded structure；The input and output cabling (202) is located at the both sides of cascaded structure；The inductance cabling at the cascaded structure two ends
(201) also it is connected between input and output cabling (202) using three-dimensional inductance metal camber line (4)；
Also include a protective cap (5), the protective cap (5) covers all three-dimensional inductance metal camber lines (4).
2. three-dimensional glass induction structure as claimed in claim 1, it is characterised in that
Described matrix (1) uses glass basis or sapphire substrates or ceramic matrix.
3. three-dimensional glass induction structure as claimed in claim 1, it is characterised in that
The protective cap (5) is hollow-core construction, and the input and output cabling (202) is extended out on the outside of protective cap (5).
4. three-dimensional glass induction structure as claimed in claim 1, it is characterised in that
The protective cap (5) is solid construction, including protective cap (5) also covers input and output cabling (202)；Input and output are walked
Line (202) draws another surface for being connected to matrix (1) by the conductive through hole (6) in matrix (1).
5. such as three-dimensional glass induction structure according to any one of claims 1 to 4, it is characterised in that
The inductance cabling (201) is longitudinally oriented arranged in parallel, and three-dimensional inductance metal camber line (4) diagonally connects adjacent two inductance
Cabling (201).
6. the three-dimensional glass induction structure as described in Claims 1 to 4, it is characterised in that
Three-dimensional inductance metal camber line (4) is arched upward, and region (401) is interior to fill magnetic material.
7. the three-dimensional glass induction structure as described in Claims 1 to 4, it is characterised in that
One or more three-dimensional inductance metal camber line (4) is connected between adjacent inductance coil node.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720109885.8U CN206412357U (en) | 2017-02-06 | 2017-02-06 | Three-dimensional glass induction structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720109885.8U CN206412357U (en) | 2017-02-06 | 2017-02-06 | Three-dimensional glass induction structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206412357U true CN206412357U (en) | 2017-08-15 |
Family
ID=59557888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720109885.8U Active CN206412357U (en) | 2017-02-06 | 2017-02-06 | Three-dimensional glass induction structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206412357U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876372A (en) * | 2017-02-06 | 2017-06-20 | 无锡吉迈微电子有限公司 | Three-dimensional glass induction structure and manufacture craft |
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2017
- 2017-02-06 CN CN201720109885.8U patent/CN206412357U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876372A (en) * | 2017-02-06 | 2017-06-20 | 无锡吉迈微电子有限公司 | Three-dimensional glass induction structure and manufacture craft |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181008 Address after: Room 987, Room 1303, 99 South Second Road, Songyu, Xiamen China (Fujian) Free Trade Experimental Zone, 361000 Patentee after: Xiamen Yun Tian Semiconductor Technology Co., Ltd. Address before: 214116 No. 45, joint East Industrial Park, 58 Jinghong Road, Xishan District, Wuxi, Jiangsu. Patentee before: WUXI JIMAI MICROELECTRONICS CO., LTD. |