CN206388701U - 高致密高可靠性led结构 - Google Patents
高致密高可靠性led结构 Download PDFInfo
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- CN206388701U CN206388701U CN201621438799.3U CN201621438799U CN206388701U CN 206388701 U CN206388701 U CN 206388701U CN 201621438799 U CN201621438799 U CN 201621438799U CN 206388701 U CN206388701 U CN 206388701U
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- 239000004033 plastic Substances 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 4
- 229920006335 epoxy glue Polymers 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 30
- WRDNCFQZLUCIRH-UHFFFAOYSA-N 4-(7-azabicyclo[2.2.1]hepta-1,3,5-triene-7-carbonyl)benzamide Chemical class C1=CC(C(=O)N)=CC=C1C(=O)N1C2=CC=C1C=C2 WRDNCFQZLUCIRH-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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Abstract
本实用新型公开一种高致密高可靠性LED结构,包括金属支架、第一塑料体、晶片、晶线和电极片;所述第一塑料体与金属支架相连接;所述金属支架上表面安装有设置在第一塑料体内的小杯结构和大杯结构,且小杯结构安装在大杯结构的底部,小杯结构为长方形缺口的形状,大杯结构为倒梯形缺口的形状;所述晶片设置在小杯结构内;所述电极片通过晶线与晶片电连接。这种杯中杯的结构使LED上层的大碗杯承受主要的应力,从而达到保护小碗杯中的晶片和晶线不受破坏的作用。而且能增加环氧胶水与PPA的接触面并减少环氧胶水与金属的接触面,以增强环氧胶水与整个LED金属支架的结合力,从而达到提升LED的致密性和可靠性。
Description
技术领域
本实用新型涉及LED显示屏的技术领域,尤其涉及一种高致密高可靠性LED结构。
背景技术
发光二极管(Light Emitting Diode,LED)是一种能发光的半导体电子元件,可以将电能转化为光能输出。由于其亮度、光照度较强,且功耗小的缘故,被广泛应用于照明、显示等领域。
实用新型内容
针对上述技术中存在的不足之处,本实用新型提供一种结构简单的高致密高可靠性LED结构。
为了达到上述目的,本实用新型一种高致密高可靠性LED结构,包括金属支架、第一塑料体、晶片、晶线和电极片;所述金属支架上表面安装有设置在第一塑料体内的小杯结构和大杯结构,且小杯结构安装在大杯结构的底部,小杯结构为长方形缺口的形状,大杯结构为倒梯形缺口的形状;所述晶片设置在小杯结构内;所述电极片通过晶线与晶片电连接。
其中,所述金属支架分为第一金属片和第二金属片,所述晶片设置在第二金属片上;第一金属片固定在第一塑料体的一边侧面且延伸到第一塑料体底面,第二金属固定在第一塑料体另一边侧面且延伸到第一塑料体底面,且第一金属片与第二金属片的延伸端不相互连接。其中,所述第一金属片和第二金属片合围形成一腔体,该腔体内为第二塑料体,且第二塑料体采用的是PPA材料。
其中,所述晶片包括有红色晶片、蓝色晶片和绿色晶片;所述蓝色晶片设置于绿色晶片的一侧,红色晶片设置于绿色晶片的另一侧,且红色晶片、蓝色晶片和绿色晶片三者排列成一条直线。
与现有技术相比,本实用新型的高致密高可靠性LED结构,该结构上设置有长方形缺口形状的小杯结构和倒梯形缺口形状的大杯结构,且小杯结构 安装在大杯结构的底部,这种改进的杯中杯的结构使LED上层的大碗杯承受主要的应力,从而达到保护小碗杯中的晶片和晶线不受破坏的作用。而且能增加环氧胶水与PPA的接触面并减少环氧胶水与金属的接触面,以增强环氧胶水与整个LED金属支架的结合力,从而达到提升LED的致密性和可靠性。
附图说明
图1为本实用新型的主视图;
图2为本实用新型的俯视图;
图3为本实用新型的侧视图;
主要元件符号说明如下:
1、金属支架 2、第一塑料体
3、晶片 4、电极片
5、晶线 6、小杯结构
7、大杯结构 8第二塑料体
11、第一金属片 12、第二金属片
具体实施方式
为了更清楚地表述本实用新型,下面结合附图对本实用新型作进一步地描述。
参阅图1-3,本实用新型包括金属支架1、第一塑料体2、晶片3、晶线5和电极片4;所述金属支架1上表面安装有设置在第一塑料体2内的小杯结构6和大杯结构7,且小杯结构6安装在大杯结构7的底部,小杯结构6为长方形缺口的形状,大杯结构7为倒梯形缺口的形状;所述晶片3设置在小杯结构6内;所述电极片4通过晶线5与晶片4电连接。
与现有技术相比,本实用新型的高致密高可靠性LED结构,该结构上设置有长方形缺口形状的小杯结构6和倒梯形缺口形状的大杯结构7,且小杯结构6安装在大杯结构7的底部,这种改进的杯中杯的结构使LED上层的大碗杯承受主要的应力,从而达到保护小碗杯中的晶片3和晶线5不受破坏的作用。而且能增加环氧胶水与PPA的接触面并减少环氧胶水与金属的接触面,以增强环氧胶水与整个LED金属支架1的结合力,从而达到提升LED的致密性和可靠性。
在本实用新型中,所述金属支架1分为第一金属片11和第二金属片12,所述晶片3设置在第二金属片12上;第一金属片11固定在第一塑料体2的一边侧面且延伸到第一塑料体2底面,第二金属12固定在第一塑料体2另一边侧面且延伸到第一塑料体2底面,且第一金属片11与第二金属片12的延伸端不相互连接。通过对金属支架边缘冲成不同程度的曲线,冲出越复杂的曲线,金属支架边缘线就越长,使得湿气由金属支架边缘渗入的难度变得非常大。
在本实用新型中,所述第一金属片11和第二金属片12合围形成一腔体,该腔体内为第二塑料体8,且第二塑料体8采用的是PPA材料。PPA为改性聚对苯二酰对苯二胺,它介于传统的热可塑性工程材料和高成本的特种聚合物之间。
在本实用新型中,所述晶片包括有红色晶片、蓝色晶片和绿色晶片;所述蓝色晶片设置于绿色晶片的一侧,红色晶片设置于绿色晶片的另一侧,且红色晶片、蓝色晶片和绿色晶片三者排列成一条直线,以保证三者发光混合后的白色光的色温数值。
以上公开的仅为本实用新型的几个具体实施例,但是本实用新型并非局限于此,任何本领域的技术人员能思之的变化都应落入本实用新型的保护范围。
Claims (4)
1.一种高致密高可靠性LED结构,其特征在于,包括金属支架、第一塑料体、晶片、晶线和电极片;所述第一塑料体与金属支架相连接;所述金属支架上表面安装有设置在第一塑料体内的小杯结构和大杯结构,且小杯结构安装在大杯结构的底部,小杯结构为长方形缺口的形状,大杯结构为倒梯形缺口的形状;所述晶片设置在小杯结构内;所述电极片通过晶线与晶片电连接。
2.根据权利要求1所述的高致密高可靠性LED结构,其特征在于,所述金属支架分为第一金属片和第二金属片,所述晶片设置在第二金属片上;第一金属片固定在第一塑料体的一边侧面且延伸到第一塑料体底面,第二金属固定在第一塑料体另一边侧面且延伸到第一塑料体底面,且第一金属片与第二金属片的延伸端不相互连接。
3.根据权利要求2所述的高致密高可靠性LED结构,其特征在于,所述第一金属片和第二金属片合围形成一腔体,该腔体内为第二塑料体,且第二塑料体采用的是PPA材料。
4.根据权利要求1所述的高致密高可靠性LED结构,其特征在于,所述晶片包括有红色晶片、蓝色晶片和绿色晶片;所述蓝色晶片设置于绿色晶片的一侧,红色晶片设置于绿色晶片的另一侧,且红色晶片、蓝色晶片和绿色晶片三者排列成一条直线。
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Address after: 523000 2nd, 3rd and 5th floors of Building E, Xinmusheng Low Carbon Science Park, Pinghu Street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Xinguangtai Electronic Technology Co.,Ltd. Address before: 518000 2nd, 3rd and 5th Floors of Building E, Xinmusheng Low Carbon Science Park, Pinghu Street, Longgang District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN KN-LIGHT ELECTRONIC TECHNOLOGY CO.,LTD. |
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