CN206364498U - A kind of switching power circuit with low-voltage variation and overheat protector - Google Patents
A kind of switching power circuit with low-voltage variation and overheat protector Download PDFInfo
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- CN206364498U CN206364498U CN201720003158.3U CN201720003158U CN206364498U CN 206364498 U CN206364498 U CN 206364498U CN 201720003158 U CN201720003158 U CN 201720003158U CN 206364498 U CN206364498 U CN 206364498U
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Abstract
The utility model proposes a kind of switching power circuit with low-voltage variation and overheat protector, including LED controller, band-gap reference and protection circuit, amplifier, two divider resistances and two power tubes；The positive input of amplifier connects one end of two divider resistances, the anti-phase input terminal strip gap benchmark and the reference voltage output end of protection circuit of amplifier, the output terminal strip gap benchmark of amplifier and test voltage and one end of LED controller of protection circuit；The grid of two power tubes of another termination of LED controller；The drain electrode of two power tubes connects externally fed port, another termination supply port of the source electrode of first power tube and the first divider resistance, the other end ground connection of the source electrode of second power tube and the second divider resistance, the temperature drift problem of band-gap reference when efficiently solving the false triggering and too high temperature that startup easily occurs when battery is powered.
Description
Technical field
The utility model belongs to technical field of integrated circuits, is related to Switching Power Supply, especially with low-voltage variation and excess temperature
The switching power circuit of protection.
Background technology
The fast development in current information epoch make it that dependence of the people to electronic product and equipment is increasing, and in electricity
Power supply is be unable to do without during the use of sub- product and equipment.Wherein, Switching Power Supply is most widely used.Why selecting switch
Power supply, essentially consists in Switching Power Supply compared with linear power supply, and it has volume and the advantage in terms of efficiency.From Switching Power Supply
From the point of view of composition, it is mainly made up of power with control two parts.Power stage part refers mainly to select under different applications and requirement
Different topological structures are selected, while taking into account semiconductor element and design cost；Controlled stage part refers mainly to the control of circuit electric signal
Mode processed.
In the market mainly includes extensively using the LED controller circuit form with boost function：Constant-current control circuit, perseverance
Voltage-controlled circuit processed, PWM (pulsewidth modulation) control circuits etc..Constant-current control circuit is answered with constant-voltage control circuit Chang Yinwei internal structures
Miscellaneous, peripheral pin is more and needs some other components in solar recharging and control to be used cooperatively, such nothing
Cost is added in shape, therefore both circuit working methods are commonly applied to the LED controls of early stage, it is in solar energy circuit application
In the market is fewer and fewer.Pwm control circuit is by internal specific control mode formation minor loop, so as to reach chip
Pin is few, easy to use, it is with low cost the advantages of, be relatively adapted to outdoor LED driving and require, but for low-power consumption and high efficiency electricity
Road can not obtain Expected Results for requiring.
In the market LED controller by battery or storage battery power supply when, gradually rise, usually can with the supply voltage of chip
Cause during circuit start under especially no-load condition, partial circuit can not be normally-open, can often produce false triggering or prolong
When Trigger Problems.And during chip use, especially under case of heavy load, chip temperature gradually rises, this can frequently result in band
The change of gap reference voltage rapidly, and then cause the change of output voltage, this is accomplished by the case of chip temperature is higher still
Keep the relative steady change of output voltage.
Utility model content
Main purpose of the present utility model is a kind of switching power circuit with low-voltage variation and overheat protector of offer,
The temperature drift problem of band-gap reference when efficiently solving the false triggering and too high temperature that startup easily occurs when battery is powered.
In order to achieve the above object, solution of the present utility model is：
A kind of switching power circuit with low-voltage variation and overheat protector, it is characterised in that including LED controller, band
Gap benchmark and protection circuit, amplifier, the first divider resistance and the second divider resistance and the first power tube and the second power tube；
The band-gap reference and protection circuit include band-gap reference circuit, first switch pipe, second switch pipe, the 3rd switch
Pipe and current source；The reference voltage output end of the emitter stage of the first switch pipe/source electrode tape splicing gap reference circuit, described
The second voltage output end of the base stage of one switching tube/grid tape splicing gap reference circuit, the collector of the first switch pipe
With emitter stage/source ground of second switch pipe；First electricity of the base stage of the second switch pipe/grid tape splicing gap reference circuit
Press output end, the collector of the second switch pipe and the output end of current source and base stage/grid phase of the 3rd switching tube
Even；The input of the current source is connected with supply port；Emitter stage/source ground of 3rd switching tube, the described 3rd
The collector output test voltage of switching tube；
The positive input of the amplifier connects one end of the first divider resistance and one end of the second divider resistance, described
The anti-phase input terminal strip gap benchmark and the reference voltage output end of protection circuit of amplifier, the output terminal strip of the amplifier
One end of the test voltage and LED controller of gap benchmark and protection circuit；The power of another termination first of the LED controller
The grid of the grid of pipe and the second power tube；The drain electrode of first power tube and the second power tube connects externally fed end
Mouthful, the source electrode of first power tube and another termination supply port of the first divider resistance, the source electrode of second power tube
It is grounded with the other end of the second divider resistance.
According to one side of the present utility model, the switching power circuit is integrated into chip.
According to one side of the present utility model, the LED controller is the LED controller based on PFM patterns.
According to one side of the present utility model, the LED controller is the LED controller based on PWM mode.
According to one side of the present utility model, first power tube and the second power tube are field-effect transistor.
According to one side of the present utility model, the first switch pipe is field-effect transistor.
According to one side of the present utility model, the first switch pipe is bipolar transistor.
According to one side of the present utility model, the second switch pipe and the 3rd switching tube are field-effect transistor.
According to one side of the present utility model, the second switch pipe and the 3rd switching tube are bipolar transistor.
Due to using such scheme, the beneficial effects of the utility model are：
The utility model proposes a kind of switching power circuit with low-voltage variation and overheat protector, there is provided a kind of energy
Enough skills for effectively solving the problems, such as the temperature drift of band-gap reference when false triggering and the too high temperature that startup easily occurs when battery is powered
Art scheme.The utility model especially can rapidly start, it is therefore prevented that in battery effectively on chip after electricity under no-load condition
The problem of triggering false triggering in power up.The switching power circuit can during circuit start band-gap reference it is also incomplete
False triggering is avoided with shut-off by the conducting of switching tube during startup.Meanwhile, chip temperature is increasingly under chip case of heavy load
Height, can effectively reach that good temperature drift is controlled by adding after switching tube within the temperature range of setting.The circuit can be integrated
For chip, required peripheral components are few, and cost is relatively low, and production efficiency is high.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme in the utility model embodiment, it will make below to required in embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present utility model,
For those of ordinary skill in the art, on the premise of not paying creative work, it can also be obtained according to these accompanying drawings
Other accompanying drawings.
Fig. 1 is the circuit theory schematic diagram of switching power circuit in the utility model embodiment.
Fig. 2 is the overall structure diagram of switching power circuit in the utility model embodiment.
Fig. 3 is band-gap reference and protection circuit structural representation in the utility model embodiment.
Fig. 4 is PTAT current generation circuit structural representation in the utility model embodiment.
Fig. 5 is protection circuit structural representation in the utility model embodiment.
Fig. 6 is the temperature drift curve for not adding protection circuit in the utility model embodiment.
Fig. 7 is the temperature drift curve added after protection circuit in the utility model embodiment.
Fig. 8 is the operation principle structural representation of switching power circuit in the utility model embodiment.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the utility model, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belongs to the scope of the utility model protection.
Fig. 1 is the structured flowchart of the utility model switching power circuit, and Fig. 2 is its overall structure diagram.
As shown in Figure 1 and Figure 2, switching power circuit of the present utility model includes LED controller, band-gap reference and protection electricity
Road, amplifier A1, divider resistance R1 and R2, and including power tube MN and MP.In the present embodiment, power tube MN and MP are field-effect
Transistor.
Band-gap reference and protection circuit have output end Vref and Test.Amplifier A1 positive input connects divider resistance
R1 one end and divider resistance R2 one end, amplifier A1 anti-phase input terminal strip gap benchmark and the output end of protection circuit
Vref, amplifier A1 output terminal strip gap benchmark and output end Test and one end of LED controller of protection circuit；LED
Another termination power tube MP, MN of controller grid；Power tube MP, MN drain electrode connect LX ports, power tube MP source electrode with
The other end ground connection GND of divider resistance R1 another termination supply port VDD, power tube MN source electrode and divider resistance R2.
As shown in figure 3, band-gap reference and protection circuit, including band-gap reference circuit, switching tube Q1, M1, M2 and electric current
Source I1.Switching tube Q1, M1, M2 are field-effect transistor or are bipolar transistor.In the present embodiment, switching tube Q1 is bipolar
Transistor npn npn, switching tube M1, M2 are field-effect transistor.The output end of switching tube Q1 emitter stage tape splicing gap reference circuit
The output end V2 of Vref, switching tube Q1 base stage tape splicing gap reference circuit, switching tube Q1 colelctor electrode and switching tube M1 source electrode
It is connected and is grounded GND；The output end V1 of switching tube M1 grid tape splicing gap reference circuit, switching tube M1 drain electrode and current source I1
Output end and switching tube M2 grid be connected；Current source I1 input is connected with supply port VDD；Switching tube M2 source electrode
GND is grounded, switching tube M2 drain electrode meets output end Test.
Because the biasing circuit of bipolar transistor is actually and PTAT.Therefore by band-gap reference and guarantor
Protection circuit point two parts a, part is PTAT current generation circuit (PTAT as shown in Figure 4：proportional to
Absolute temperature), a part is protection circuit as shown in Figure 5.
Fig. 4 is a kind of embodiment of PTAT current generation circuit, including pmos type field effect transistor M P1, MP2 and MP3,
Nmos type field effect transistor M N1 and MN2, resistance R6, bipolar transistor Q3 and Q4.Wherein, field effect transistor M P1, MP2
And MP3 grid is connected and is connected to field effect transistor M P1 drain electrode and field effect transistor M N1 drain electrode, field-effect is brilliant
Body pipe MP1, MP2 and MP3 source electrode is connected and is connected to supply port VDD；Field effect transistor M P2 drain electrode and field-effect transistor
MN1, MN2 grid are connected, and are connected with field effect transistor M N2 drain electrode；Field effect transistor M N1 source electrode connecting resistance R6
One end, resistance R6 another termination bipolar transistor Q3 emitter stage；Bipolar transistor Q3 and Q4 base stage, colelctor electrode
It is grounded GND；Bipolar transistor Q4 emitter stage connects field effect transistor M N2 source electrode；Field effect transistor M P3 drain electrode
Export PTAT current.
Field effect transistor M P1~MP2 and MN1~MN2 be identical to pipe, making ID1=ID2, (ID1 is field-effect
Transistor MP1, MN1 are to the electric current of ground path, and ID2 is electric current of field effect transistor M P2, MN2 to ground path), circuit needs to protect
Demonstrate,prove field effect transistor M N1 i.e. VA=VBs equal with MN2 drain voltage.So, ID1=ID2=(VTlnn)/R6(VT：Thermoelectricity
Gesture), ID3 (PTAT current i.e. field-effect transistor MP3 output current) is produced identical characteristic.In practical application
In, due to the mismatch between transistor and resistance R6 temperature coefficient, ID3 change can deviate preferable equation.VBE3Generation
Table bipolar transistor Q3 base emitter voltage, VBE4Represent bipolar transistor Q4 base emitter voltage.Thus
It can draw：
VA=VB (1)
VA=I1*R6+VBE3 (2)
VB=VBE4 (3)
It can be obtained by formula (1), (2), (3)：
I1*R6+VBE3=VBE4 (4)
Is represents bipolar transistor saturation current, and Ic, which is represented, flows through bipolar transistor collector current, and formula (4) is changed
Jian Ke get：
Due to Ic1=Ic2=ID1=ID2, it is assumed that Q3=mQ4, then Is1：Is2=m, it can thus be concluded that：
I1*R6=VT*lnm
I1=VT*lnm/R6 (6)
PTAT current can be obtained by formula (6).
Fig. 5 is a kind of embodiment of protection circuit, 2PTAT electric current tape splicing the gap reference voltage V ref and resistance R3 of input,
The resistance R3 other end is connected with resistance R4, field effect transistor M 1 grid；The R4 other end and resistance R5 and ambipolar crystalline substance
Body pipe Q2 base stage is connected, and the resistance R5 other end is connected with bipolar transistor Q1 emitter stage, bipolar transistor Q1's
Base stage and grounded emitter GND；Bipolar transistor Q2 emitter stage connects PTAT current, and bipolar transistor Q2 colelctor electrode connects
Ground GND；The source ground GND of field effect transistor M 1, the drain electrode of field effect transistor M 1 meets current source I2 and field-effect is brilliant
Body pipe M2 grid；The source ground GND of field effect transistor M 2, drains as output voltage Test.
Bandgap voltage reference Vref has：
Vref=I1* (R3+R4+R5)+VBE1 (7)
It can be obtained by formula (6), (7)：
Vref=VBE1+VT*lnm*(R3+R4+R5)/R6 (8)
Due to VBE1It is negative temperature coefficient, VT is positive temperature coefficient, by formula (8) as long as understanding that choosing suitable value can just protect
Card two and be zero-temperature coefficient.Due to bandgap voltage reference partial pressure V2=(R3+R4)/(R3+R4+R5) * Vref, pass through adjustment
Resistance ratio, can adjust the switch-back point under different temperatures, and such as Fig. 6 is the temperature drift for not adding protection dot circuit, and such as Fig. 7 is addition
The temperature drift of circuit after protection circuit, hence it is evident that bandgap voltage reference is reduced when more than 120 DEG C it can be seen that adding after protection circuit,
So as to reach the effect for improving temperature drift.
When bandgap voltage reference partial pressure V1=R3/ (R3+R4+R5) * Vref are less than the cut-in voltage of field effect transistor M 1
When, because the drain electrode of field effect transistor M 1 connects current source, therefore its output voltage is field-effect transistor M2 grid voltage
For height, now output signal Test is low, and amplifier A1 output signal is forced to drag down and then controlled by it as seen from Figure 2
LED controller.
As shown in figure 8, during the work of the utility model circuit, LX ports are by inductance L connection externally fed BAT ports, together
When one end for being connected with BAT ports of inductance L be grounded by electric capacity C1；Voltage output port VDD after electric capacity C2 by being grounded.Now
Entirely the operation principle of circuit is：After circuit is powered, when BAT terminal voltages gradually rise, by electric capacity C1 storage electric charges, and this
When bandgap voltage reference gradually rise with VDD, when it is less than switching tube M1 cut-in voltage, now switching tube M2 receives electricity
Stream source pull-up influence, make its grid voltage for height, and then switching tube M2 turn on so that will drain electrode output voltage Test drag down, from
And give LED controller fix low level, and then make its not by amplifier A1 output levels influenceed and only by other logic functions
Control.As vdd voltage gradually rises, bandgap voltage reference Vref gradually rises, and when Vref voltages are sufficiently large, makes switching tube
After M1 is opened, now switching tube M2 grid level is dragged down, and then Test level is only influenceed by amplifier A1, so as to realize
Circuit normal mode of operation., can by field effect transistor M P and MN characteristic as LED controller constantly provides low and high level
Know, high level control MN conducting MP shut-offs, low level control MP conducting MN shut-offs, it is path 1 and path 2 to form two paths.
After start-up operation, field effect transistor M P conductings make vdd terminal voltage equal with supply voltage BAT, so as to be in-line power.
The progress worked with internal circuit, is that path 1 works during field effect transistor M N conducting field effect transistor M P shut-offs, now
Electric capacity C1 constantly stores electric charge；It is that path 2 works when field-effect transistor MP conducting field effect transistor M N shut-offs, now
Electric capacity C1 discharges and electric capacity C2 proceeds by charging.When field-effect transistor MN is turned on again, output end vdd voltage is by electric capacity
C2 electric discharges maintenance voltage is constant, and electric capacity C1 proceeds charging.
Above-described embodiment is employed based on the LED controller based on PFM patterns, in the utility model, above-mentioned base
Can be substituted in the LED controller of PFM patterns by other LED controllers, for example the LED controller based on PWM, constant-voltage controller,
Constant-current controller etc..
In the utility model, the LED controller can be integrated into chip.
To sum up, the utility model provide one kind can effectively on chip after electricity (especially under no-load condition) rapidly
Start, it is therefore prevented that the problem of triggering false triggering in battery power up.The circuit can during circuit start band gap base
False triggering is avoided with shut-off by the conducting of switching tube when standard does not start also completely；Meanwhile, the chip under chip case of heavy load
Temperature more and more higher, can effectively reach that good temperature drift is controlled by adding after switching tube Q1 within the temperature range of setting.
The circuit can be integrated into chip, and required peripheral components are few, and cost is relatively low, and production efficiency is high.
The above-mentioned description to embodiment is to be understood that for ease of those skilled in the art and special using this
Profit.Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein
General Principle is applied in other embodiment without passing through performing creative labour.Therefore, the utility model is not limited to here
Embodiment, those skilled in the art disclose according to of the present utility model, do not depart from improvement that the utility model category made and
Modification all should be within protection domain of the present utility model.
Claims (9)
1. a kind of switching power circuit with low-voltage variation and overheat protector, it is characterised in that including LED controller, band gap
Benchmark and protection circuit, amplifier, the first divider resistance and the second divider resistance and the first power tube and the second power tube；
The band-gap reference and protection circuit include band-gap reference circuit, first switch pipe, second switch pipe, the 3rd switching tube with
And current source；The reference voltage output end of the emitter stage of the first switch pipe/source electrode tape splicing gap reference circuit, described first opens
Close the second voltage output end of base stage/grid tape splicing gap reference circuit of pipe, the collector of the first switch pipe and the
Emitter stage/source ground of two switching tubes；The first voltage of the base stage of the second switch pipe/grid tape splicing gap reference circuit is defeated
Go out end, the collector of the second switch pipe is connected with base stage/grid of the output end of current source and the 3rd switching tube；
The input of the current source is connected with supply port；Emitter stage/source ground of 3rd switching tube, the 3rd switch
The collector output test voltage of pipe；
The positive input of the amplifier connects one end of the first divider resistance and one end of the second divider resistance, the amplification
The anti-phase input terminal strip gap benchmark and the reference voltage output end of protection circuit of device, the output terminal strip gap base of the amplifier
Test voltage and one end of LED controller of accurate and protection circuit；The power tube of another termination first of the LED controller
The grid of grid and the second power tube；The drain electrode of first power tube and the second power tube connects externally fed port, institute
State the source electrode of the first power tube and another termination supply port of the first divider resistance, the source electrode and second of second power tube
The other end ground connection of divider resistance.
2. the switching power circuit according to claim 1 with low-voltage variation and overheat protector, it is characterised in that described
Switching power circuit is integrated into chip.
3. the switching power circuit according to claim 1 with low-voltage variation and overheat protector, it is characterised in that described
LED controller is the LED controller based on PFM patterns.
4. the switching power circuit according to claim 1 with low-voltage variation and overheat protector, it is characterised in that described
LED controller is the LED controller based on PWM mode.
5. the switching power circuit according to claim 1 with low-voltage variation and overheat protector, it is characterised in that described
First power tube and the second power tube are field-effect transistor.
6. the switching power circuit according to claim 1 with low-voltage variation and overheat protector, it is characterised in that described
First switch pipe is field-effect transistor.
7. the switching power circuit according to claim 1 with low-voltage variation and overheat protector, it is characterised in that described
First switch pipe is bipolar transistor.
8. the switching power circuit according to claim 1 with low-voltage variation and overheat protector, it is characterised in that described
Second switch pipe and the 3rd switching tube are field-effect transistor.
9. the switching power circuit according to claim 1 with low-voltage variation and overheat protector, it is characterised in that described
Second switch pipe and the 3rd switching tube are bipolar transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720003158.3U CN206364498U (en) | 2017-01-03 | 2017-01-03 | A kind of switching power circuit with low-voltage variation and overheat protector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720003158.3U CN206364498U (en) | 2017-01-03 | 2017-01-03 | A kind of switching power circuit with low-voltage variation and overheat protector |
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| Publication Number | Publication Date |
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| CN206364498U true CN206364498U (en) | 2017-07-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201720003158.3U Withdrawn - After Issue CN206364498U (en) | 2017-01-03 | 2017-01-03 | A kind of switching power circuit with low-voltage variation and overheat protector |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107565913A (en) * | 2017-10-26 | 2018-01-09 | 井冈山电器有限公司 | A kind of protection circuit |
| CN107565514A (en) * | 2017-01-03 | 2018-01-09 | 上海裕芯电子科技有限公司 | A kind of switching power circuit with low-voltage variation and overheat protector |
| CN113220062A (en) * | 2021-05-08 | 2021-08-06 | 西安微电子技术研究所 | Over-temperature protection circuit of bipolar linear voltage stabilizer |
| CN114544017A (en) * | 2022-04-28 | 2022-05-27 | 深圳市泰德半导体有限公司 | Over-temperature detection circuit for Buck converter and switching power supply |
-
2017
- 2017-01-03 CN CN201720003158.3U patent/CN206364498U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107565514A (en) * | 2017-01-03 | 2018-01-09 | 上海裕芯电子科技有限公司 | A kind of switching power circuit with low-voltage variation and overheat protector |
| CN107565514B (en) * | 2017-01-03 | 2019-09-24 | 上海裕芯电子科技有限公司 | A kind of switching power circuit with low-voltage variation and overheat protector |
| CN107565913A (en) * | 2017-10-26 | 2018-01-09 | 井冈山电器有限公司 | A kind of protection circuit |
| CN107565913B (en) * | 2017-10-26 | 2024-02-02 | 井冈山电器有限公司 | Protection circuit |
| CN113220062A (en) * | 2021-05-08 | 2021-08-06 | 西安微电子技术研究所 | Over-temperature protection circuit of bipolar linear voltage stabilizer |
| CN114544017A (en) * | 2022-04-28 | 2022-05-27 | 深圳市泰德半导体有限公司 | Over-temperature detection circuit for Buck converter and switching power supply |
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