CN206099918U - Thin film bulk acoustic wave filter packaging structure - Google Patents
Thin film bulk acoustic wave filter packaging structure Download PDFInfo
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- CN206099918U CN206099918U CN201621155285.7U CN201621155285U CN206099918U CN 206099918 U CN206099918 U CN 206099918U CN 201621155285 U CN201621155285 U CN 201621155285U CN 206099918 U CN206099918 U CN 206099918U
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Abstract
本实用新型公开了一种薄膜体声波滤波器封装结构,包括基板和芯片,基板和芯片上设有对应的电极,所述芯片电极通过倒装焊由金球与基板电极对应连接,在基板表面粘接固定有膜层,所述膜层紧贴于基板表面并同时包裹住芯片,在芯片和基板之间形成真空腔。本实用新型能够确保芯片不被污染、能够实现微型化且加工效率提高。
The utility model discloses a package structure of a thin film bulk acoustic wave filter, which comprises a substrate and a chip. Corresponding electrodes are arranged on the substrate and the chip. A film layer is bonded and fixed, and the film layer is close to the surface of the substrate and wraps the chip at the same time, forming a vacuum cavity between the chip and the substrate. The utility model can ensure that the chips are not polluted, realize miniaturization and improve processing efficiency.
Description
技术领域technical field
本实用新型涉及薄膜体声波滤波器(FBAR),尤其涉及薄膜体声波滤波器(FBAR)的小型化封装技术,属于声波滤波器技术领域。The utility model relates to a film bulk acoustic wave filter (FBAR), in particular to a miniaturized packaging technology of a film bulk acoustic wave filter (FBAR), and belongs to the technical field of acoustic wave filters.
背景技术Background technique
目前,薄膜体声波滤波器(FBAR)的小型化封装均采用灌封树脂封装的封装形式。未来对于微型化的封装要求更高,灌封树脂对于污染问题很难控制。而薄膜体声波滤波器对工作表面要求很高,不能被污染。因此灌封树脂的封装形式难以满足实际使用需要。也有采用陶瓷外壳平行焊接的封装结构,即在外壳上制作出一个深腔结构,将裸芯片粘接于深腔内,并通过引线与外部电极电连接,然后向深腔内充入氮气以置换其内的空气,最后通过盖板将深腔封闭即可。虽然这样的封装结构满足器件不能被污染的要求,但至少存在以下两方面不足:1、器件难以小型化,目前最小的陶瓷外壳为1.6mmX1.2mm且厚度都在1mm以上,在未来的移动设备中无法使用,仅能使用在基站中,应用场合受到很大影响;2、加工效率低,由于每个器件需要分别加工,且为了使芯片处于洁净不被污染的环境存在氮气与空气的置换,故封装效率比较低下。At present, the miniaturized packaging of film bulk acoustic wave filter (FBAR) adopts the packaging form of potting resin packaging. In the future, there will be higher requirements for miniaturized packaging, and the potting resin is difficult to control the pollution problem. The thin-film bulk acoustic wave filter has high requirements on the working surface and cannot be polluted. Therefore, the packaging form of the potting resin is difficult to meet the needs of actual use. There is also a packaging structure that uses parallel welding of the ceramic shell, that is, a deep cavity structure is made on the shell, the bare chip is bonded in the deep cavity, and the lead wire is electrically connected to the external electrode, and then nitrogen gas is filled into the deep cavity to replace it. The air in it can finally close the deep cavity through the cover plate. Although such a packaging structure meets the requirement that the device cannot be polluted, there are at least two disadvantages in the following aspects: 1. It is difficult to miniaturize the device. At present, the smallest ceramic shell is 1.6mmX1.2mm and the thickness is more than 1mm. In the future mobile devices 2. The processing efficiency is low, because each device needs to be processed separately, and there is nitrogen and air replacement in order to keep the chip in a clean and non-polluted environment. Therefore, the encapsulation efficiency is relatively low.
实用新型内容Utility model content
针对现有技术存在的上述不足,本实用新型的目的是提供一种确保芯片不被污染、能够实现微型化的薄膜体声波滤波器封装结构。In view of the above-mentioned deficiencies in the prior art, the purpose of this utility model is to provide a film bulk acoustic wave filter packaging structure that ensures that the chip is not polluted and can realize miniaturization.
为了实现上述目的,本实用新型采用的技术方案如下:In order to achieve the above object, the technical scheme adopted by the utility model is as follows:
一种薄膜体声波滤波器封装结构,包括基板和芯片,基板和芯片上设有对应的电极,所述芯片电极通过倒装焊由金球与基板电极对应连接,在基板表面粘接固定有膜层,所述膜层紧贴于基板表面并同时包裹住芯片,在芯片和基板之间形成真空腔。A packaging structure of a thin film bulk acoustic wave filter, including a substrate and a chip. Corresponding electrodes are arranged on the substrate and the chip. The electrode of the chip is correspondingly connected to the electrode of the substrate by gold balls through flip-chip welding, and a film is bonded and fixed on the surface of the substrate. The film layer is close to the surface of the substrate and wraps the chip at the same time, forming a vacuum cavity between the chip and the substrate.
所述膜层为粘片膜和树脂膜。The film layer is an adhesive film and a resin film.
相比现有技术,本实用新型具有如下优点:Compared with the prior art, the utility model has the following advantages:
1、本实用新型用倒装焊将声表面波滤波器裸芯片焊接在基板上,通过真空压力将树脂膜或者粘片膜贴装于基板上包裹住裸芯片,通过这样的手段,使器件内部与外部形成了隔绝的两个部分,从而保护裸芯片表面不被污染以及密封的效果,保护了声表面波器件的工作面,使器件可以正常工作。1. The utility model uses flip-chip welding to weld the bare chip of the surface acoustic wave filter on the substrate, and attaches the resin film or adhesive film to the substrate to wrap the bare chip through vacuum pressure. Through such means, the inside of the device Two parts isolated from the outside are formed, so as to protect the surface of the bare chip from being polluted and the sealing effect protects the working surface of the surface acoustic wave device, so that the device can work normally.
2、本实用新型可以在同一块基板上一次性加工出多个器件,最后再切割成单个器件,因此比传统的单个封装工艺封装效率明显提高。2. The utility model can process multiple devices on the same substrate at one time, and finally cut them into individual devices, so the packaging efficiency is significantly improved compared with the traditional single packaging process.
3、本实用新型抛弃了原有技术中的陶瓷外壳,可以实现裸芯片的直接封装,封装效率(芯片面积/封装面积)可以达到50%以上,而且厚度方面可以控制在0.6mm以下,实现了器件的微型化。3. The utility model abandons the ceramic shell in the original technology, can realize the direct packaging of the bare chip, the packaging efficiency (chip area/packaging area) can reach more than 50%, and the thickness can be controlled below 0.6mm, realizing Device miniaturization.
附图说明Description of drawings
图1-本实用新型结构示意图。Fig. 1 - structural representation of the utility model.
图2-本封装方法基板切割前的形态图。Fig. 2 - The shape diagram of the substrate before cutting in this packaging method.
图3-粘片膜封装后爆炸图。Figure 3 - Exploded view of adhesive film after encapsulation.
具体实施方式detailed description
以下结合附图和具体实施方式对本实用新型进行详细描述。The utility model is described in detail below in conjunction with the accompanying drawings and specific embodiments.
参见图1和图3,从图上可以看出,本实用新型薄膜体声波滤波器封装结构,包括基板1和芯片2,基板和芯片上设有对应的电极,所述芯片电极通过倒装焊工艺由金球3与基板电极对应连接。在基板1表面粘接固定有膜层4,所述膜层4紧贴于基板1表面并同时包裹住芯片2,在芯片2和基板1之间形成真空腔5。Referring to Fig. 1 and Fig. 3, it can be seen from the figures that the packaging structure of the thin film bulk acoustic wave filter of the present invention includes a substrate 1 and a chip 2, and corresponding electrodes are arranged on the substrate and the chip, and the chip electrodes are flip-chip welded. The process is to connect the gold ball 3 to the substrate electrode correspondingly. A film layer 4 is glued and fixed on the surface of the substrate 1 , and the film layer 4 is closely attached to the surface of the substrate 1 and wraps the chip 2 at the same time, forming a vacuum chamber 5 between the chip 2 and the substrate 1 .
本实用新型薄膜体声波滤波器封装方法,本薄膜体声波滤波器具有前述的封装结构,具体封装步骤如下:The packaging method of the thin film bulk acoustic wave filter of the present invention, the thin film bulk acoustic wave filter has the aforementioned packaging structure, and the specific packaging steps are as follows:
1)在基板上根据需要封装的芯片数量划分芯片封装区域,每个区域对应一个待封装芯片;在每个区域设置与芯片电极对应的基板电极;芯片封装区域呈矩阵设置;1) Divide the chip packaging area on the substrate according to the number of chips to be packaged, and each area corresponds to a chip to be packaged; set the substrate electrode corresponding to the chip electrode in each area; the chip packaging area is arranged in a matrix;
2)分别将待封装芯片上的电极通过倒装焊工艺焊接在基板对应区域的对应电极上;2) Weld the electrodes on the chips to be packaged to the corresponding electrodes in the corresponding areas of the substrate through the flip-chip welding process;
3)通过真空贴膜工艺将保护膜贴装于基板上并包裹住所有芯片,在每个芯片和基板之间形成真空腔;3) Attach the protective film on the substrate and wrap all the chips through the vacuum film bonding process, forming a vacuum cavity between each chip and the substrate;
4)通过加温使保护膜粘接固化,从而使保护膜分别与基板和芯片固定连接;该步骤得到的产品形态见图2;4) The protective film is bonded and cured by heating, so that the protective film is fixedly connected to the substrate and the chip respectively; the product form obtained in this step is shown in Figure 2;
5)将基板按封装区域切割得到切割单元,每个切割单元由对应封装区域的基板及其上的芯片和保护膜构成,该切割单元即构成一个薄膜体声波滤波器。5) Cutting the substrate according to the packaging area to obtain cutting units. Each cutting unit is composed of a substrate corresponding to the packaging area, a chip on it and a protective film. The cutting unit constitutes a thin-film bulk acoustic wave filter.
本实用新型所述膜层材质为粘片膜和树脂膜。这类膜材料具有热固化性,在一定温度下,该材料软化成为“果冻状”,并在压力的作用下可以按照设计的形状进行塑形;进一步提高温度,该材料会逐步固化,并保持塑形以后的形状,正是基于该特点,才可以用于本封装工艺,形成本封装结构。The material of the film layer in the utility model is an adhesive film and a resin film. This kind of membrane material is heat-curable. At a certain temperature, the material softens into a "jelly-like" shape, and can be shaped according to the designed shape under the action of pressure; further increasing the temperature, the material will gradually solidify and maintain It is precisely based on this feature that the shape after molding can be used in this packaging process to form this packaging structure.
本实用新型声表面波器件裸芯片通过金球倒装焊在基板上,形成一个台阶状的结构,台阶底部与基板间存在缝隙,使用真空贴膜工艺,使保护膜沿器件上表面形成一个包裹层,贴膜后该间隙形成真空腔。The bare chip of the surface acoustic wave device of the utility model is flip-chip welded on the substrate by gold balls to form a stepped structure, there is a gap between the bottom of the step and the substrate, and the vacuum film sticking process is used to make the protective film form a wrapping layer along the upper surface of the device , after the film is pasted, the gap forms a vacuum cavity.
由于声表面波器件的工作区域不能污染,因此在器件倒装焊接后需要将倒装焊接后形成的空腔保护起来。本实用新型采用保护膜进行封装将其作为一个保护层以阻止后续封装材料侵入空腔。采用倒装焊技术将声表面波滤波器裸芯片焊接在基板上,通过真空压力将保护膜贴装于基板上并包裹住裸芯片,从而保护裸芯片表面不被污染以及密封的效果。由于贴膜是在真空环境下进行,因此器件的水汽含量能够得到保证。Since the working area of the surface acoustic wave device cannot be polluted, it is necessary to protect the cavity formed after the device is flip-chip soldered. The utility model adopts the protective film for encapsulation and uses it as a protective layer to prevent subsequent encapsulation materials from invading the cavity. The bare chip of the surface acoustic wave filter is welded on the substrate by flip-chip welding technology, and the protective film is mounted on the substrate by vacuum pressure and wraps the bare chip, thereby protecting the surface of the bare chip from contamination and sealing effect. Since the film attachment is carried out in a vacuum environment, the moisture content of the device can be guaranteed.
本实用新型的上述实施例仅仅是为说明本实用新型所作的举例,而并非是对本实用新型的实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其他不同形式的变化和变动。这里无法对所有的实施方式予以穷举。凡是属于本实用新型的技术方案所引申出的显而易见的变化或变动仍处于本实用新型的保护范围之列。The above-mentioned embodiments of the utility model are only examples for illustrating the utility model, rather than limiting the implementation of the utility model. For those of ordinary skill in the art, other variations and modifications in various forms can be made on the basis of the above description. All the implementation manners cannot be exhaustively listed here. All obvious changes or variations derived from the technical solutions of the utility model are still within the scope of protection of the utility model.
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