CN205920989U - A LED support and LED for face down chip - Google Patents
A LED support and LED for face down chip Download PDFInfo
- Publication number
- CN205920989U CN205920989U CN201620842343.7U CN201620842343U CN205920989U CN 205920989 U CN205920989 U CN 205920989U CN 201620842343 U CN201620842343 U CN 201620842343U CN 205920989 U CN205920989 U CN 205920989U
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- Prior art keywords
- led
- cradle
- flip chip
- groove
- recess
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000002184 metal Substances 0.000 claims abstract description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 8
- 239000006071 cream Substances 0.000 abstract description 8
- 230000008018 melting Effects 0.000 abstract description 7
- 238000002844 melting Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 3
- 239000012530 fluid Substances 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 18
- 238000004806 packaging method and process Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 238000005476 soldering Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 230000009974 thixotropic effect Effects 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 241000826860 Trapezium Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model provides a LED support for face down chip, the LED support includes base plate (10), wherein, base plate (10) upper berth is equipped with insulated tape (30), the metal level has been laid to insulated tape (30) both sides, the metal level of insulated tape both sides is anodal regional (21) and negative pole regional (22) respectively, anodal regional (21) with be provided with the recess on negative pole regional (22) respectively. Above -mentioned a LED support and LED for face down chip, fluted at the anodal region and the negative pole regional setting of base plate, the tin cream can evenly be filled in the recess, and the melting tin cream can not remove the skew when returning fluid welding to avoid encapsulating the IR problem that process tin cream melting skew caused.
Description
Technical Field
This patent belongs to LED encapsulation technical field, especially relates to a LED support and LED for flip chip.
Background
In recent years, with the rapid development of LED product technology, flip chips have become the key direction of industrial research due to their advantages of low thermal resistance, super current driving and high light efficiency, however, flip chips have a problem of leakage current (IR).
In the prior art, an Au-Sn alloy electrode technology and an eutectic soldering technology are adopted to enable a flip chip and a substrate to be well soldered, and the problem of IR is avoided, however, Au-Sn alloy equipment and eutectic soldering equipment are required to be used in the technology, the investment cost is high, the temperature in the eutectic soldering technology is up to 320 ℃, the temperature is an application condition which cannot be borne by a conventional SMD plastic support and a white oil substrate, the temperature exceeds the melting temperature of the plastic, the melting deformation of the plastic is easily caused, the white oil is yellowed, and the reflectivity is sharply reduced.
The flip chip adopts the solder paste die bonding technology, although the practicability is strong, the cost performance is high. However, after packaging, since the melting direction of the solder paste during reflow soldering is not controllable, the solder paste flows to conduct the positive and negative electrodes at the bottom of the flip chip, and thus the IR problem occurs.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide an LED support and an LED for a flip chip, aiming at the problem that a flip chip is easily subjected to leakage current when the flip chip is fixed by using a solder paste die bonding technique.
The utility model provides a pair of a LED support for flip chip, the LED support includes the base plate, wherein, metal level and insulating tape have on the base plate, the insulating tape will the metal level is isolated to be anodal region and negative pole region, anodal region with be provided with the recess on the negative pole region respectively.
In one embodiment, the groove is an inverted trapezoidal groove.
In one embodiment, the trapezoid is an isosceles trapezoid.
In one embodiment, the included angle between the bottom surface and the side surface of the inverted trapezoidal groove is 100-120 degrees.
In one of the embodiments, the area of the recess opening is the same as the area of the electrodes of the flip chip.
In one embodiment, the depth of the groove is 20-30 μm.
In one embodiment, the wall of the groove is provided with a concave or convex texture.
In one embodiment, the groove structure of the positive electrode region is different from that of the negative electrode region.
In one embodiment, the LED support is one of a patch support, a flat support, a COB support, and a high power support.
The utility model also provides a LED, wherein, LED includes as above the LED support.
Above-mentioned LED support and LED for flip chip are provided with the recess in the positive pole region and the negative pole region of base plate, and the tin cream can evenly be filled in the recess, and melting tin cream can not remove the skew during reflow soldering to avoid the IR problem that packaging process tin cream melting skew caused.
Above-mentioned an LED support and LED for flip chip, the recess of falling the trapezium structure helps the abundant even filling of tin cream in the recess, is favorable to reducing the stress of tin cream in ageing heating process, promotes the reliability in the finished product production process.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present invention, and other drawings can be obtained by those skilled in the art according to these drawings.
Fig. 1 is a schematic structural view of an embodiment 1 of an LED support for a flip chip according to the present invention;
FIG. 2 is an enlarged view of FIG. 1 at A;
FIG. 3 is a schematic diagram of an LED structure including the LED support for flip chips described in embodiment 1;
fig. 4 is a schematic structural view of an embodiment 2 of the LED support for flip chip of the present invention;
fig. 5 is a schematic view of an LED structure including an LED support for a flip chip according to embodiment 2;
wherein,
10-a substrate;
21-positive electrode region;
22-a negative electrode region;
30-an insulating tape;
41-positive electrode groove;
42-negative electrode groove;
50-a plastic cofferdam;
60-flip chip;
70-packaging glue.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the following is a detailed description of the LED support and LED for flip chip according to the present invention with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention.
Referring to fig. 1 to 3, a bracket according to embodiment 1 of the present invention is a surface mount type LED bracket for a flip chip 60. The support comprises a substrate 10, an insulating tape 30 is laid on the substrate 10, metal layers are laid on two sides of the insulating tape 30, and the metal layers on the two sides are a positive electrode area 21 and a negative electrode area 22 respectively. A positive electrode groove 41 is formed in the positive electrode region 21 adjacent to the insulating tape 30 by a press molding method; a negative electrode groove 42 is provided at a position of the negative electrode region 22 adjacent to the insulating tape 30. A plastic dam 50 is disposed on the metal layer, and the plastic dam 50 forms a package cavity in a region centered on the positive electrode groove 41 and the negative electrode groove 42.
The positive electrode groove 41 and the negative electrode groove 42 are inverted trapezoidal grooves, wherein the trapezoidal shape is an isosceles trapezoid, the depth of the inverted trapezoidal groove formed in the metal layer is 20 μm, the opening area of the groove is the same as the electrode area of the flip chip 60, and the included angle α between the bottom surface and the side surface of the inverted trapezoidal groove is 100 °. The recess is the trapezoidal recess of falling, helps in the solder paste fully to fill with the recess, and the solder paste after the melt molding is the trapezoidal structure of falling, and the reducible solder paste stress that receives when the encapsulation is toasted the solidification has promoted the reliability that the solder paste electricity communicates.
As an alternative embodiment, the positive electrode groove 41 and the negative electrode groove 42 may be rectangular grooves or inverted triangular grooves.
As an alternative embodiment, the positive electrode groove 41 and the negative electrode groove 42 may be provided with a concave or convex texture on the wall of the groove to further place the stress action of the solder paste during the package baking and curing.
When the flip chip 60 is packaged, the positive electrode groove 41 and the negative electrode groove 42 are filled with solder paste, the positive electrode of the flip chip 60 is aligned with the positive electrode groove 41, the negative electrode of the flip chip 60 is aligned with the negative electrode groove 42, the flip chip 60 is fixed to the negative electrode groove 42, and the solder paste is melted through a reflow soldering technology to enable the flip chip 60 and the LED support to form an electric path. And pouring the packaging glue 70 into the packaging cavity formed by the plastic cofferdam 50, and baking to cure the packaging glue 70 to finish packaging.
Because the solder paste is injected into the positive electrode groove 41 and the negative electrode groove 42, when the solder paste is melted by the reflow soldering technology, the solder paste is limited by the positive electrode groove 41 and the negative electrode groove 42, and the solder paste does not melt and flow out of the positive electrode groove 41 or the negative electrode groove 42 during high-temperature reflow soldering, so that the electrical connection between the solder paste and the metal layer and the positive and negative electrodes of the flip chip 60 is excellent, the communication between the positive electrode and the negative electrode is avoided, and the IR problem is avoided.
Referring to fig. 4 to 5, a bracket according to embodiment 2 of the present invention is a flat-plate LED bracket for a flip chip 60. The holder includes a substrate 10, a metal layer is provided on the substrate 10, and the metal layer is isolated into a positive electrode region 21 and a negative electrode region 22 by an insulating tape 30. A positive electrode groove 41 is formed in the positive electrode region 21 adjacent to the insulating tape 30 by etching; a negative electrode groove 42 is provided at a position of the negative electrode region 22 adjacent to the insulating tape 30.
The positive electrode groove 41 and the negative electrode groove 42 are inverted trapezoidal grooves, wherein the trapezoidal shape is an isosceles trapezoid, the inverted trapezoidal groove formed on the metal layer has a depth of 30 μm, the opening area of the groove is the same as the electrode area of the flip chip 60, and the included angle α between the bottom surface and the side surface of the inverted trapezoidal groove is 120 °.
When the flip chip 60 is packaged, the positive electrode groove 41 and the negative electrode groove 42 are filled with solder paste, the positive electrode of the flip chip 60 is aligned with the positive electrode groove 41, the negative electrode of the flip chip 60 is aligned with the negative electrode groove 42, the flip chip 60 is fixed to the negative electrode groove 42, and the solder paste is melted through a reflow soldering technology to enable the flip chip 60 and the LED support to form an electric path. The high thixotropic packaging adhesive 70 is arranged above the flip chip 60, so that the high thixotropic packaging adhesive 70 forms a hemispherical structure, and the high thixotropic packaging adhesive 70 is cured by baking to complete packaging.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. The utility model provides a LED support for flip chip, the LED support includes base plate (10), its characterized in that, base plate (10) upper berth is equipped with insulating tape (30), the metal level has been laid to insulating tape (30) both sides, the metal level of insulating tape both sides is anodal region (21) and negative pole region (22) respectively, anodal region (21) with be provided with the recess on the negative pole region (22) respectively.
2. The LED holder according to claim 1, wherein the recess is an inverted trapezoidal recess.
3. The LED cradle of claim 2, wherein the trapezoid is an isosceles trapezoid.
4. The LED support according to claim 2, wherein the included angle between the bottom surface and the side surface of the inverted trapezoidal groove is 100-120 °.
5. The LED holder according to claim 1, wherein the area of the recess opening is the same as the electrode area of the flip chip (60).
6. The LED holder according to claim 1, wherein the depth of the groove is 20 μm to 30 μm.
7. The LED fixture of claim 1, wherein the walls of the grooves are provided with a concave or convex texture.
8. The LED holder according to claim 1, wherein the positive pole region (21) and the negative pole region (22) have a different groove structure.
9. The LED cradle of claim 1, wherein the LED cradle is one of a patch cradle, a flat plate cradle, a COB cradle, and a high power cradle.
10. An LED comprising the LED holder according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620842343.7U CN205920989U (en) | 2016-08-04 | 2016-08-04 | A LED support and LED for face down chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620842343.7U CN205920989U (en) | 2016-08-04 | 2016-08-04 | A LED support and LED for face down chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205920989U true CN205920989U (en) | 2017-02-01 |
Family
ID=57871187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620842343.7U Active CN205920989U (en) | 2016-08-04 | 2016-08-04 | A LED support and LED for face down chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205920989U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112969311A (en) * | 2021-01-29 | 2021-06-15 | 广东浩轩光电有限公司 | Processing technology of CSPLED mounted planting type substrate |
| CN113224219A (en) * | 2021-05-10 | 2021-08-06 | 珠海市宏科光电子有限公司 | Manufacturing method of intelligent full-color-mixing COB light source |
-
2016
- 2016-08-04 CN CN201620842343.7U patent/CN205920989U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112969311A (en) * | 2021-01-29 | 2021-06-15 | 广东浩轩光电有限公司 | Processing technology of CSPLED mounted planting type substrate |
| CN113224219A (en) * | 2021-05-10 | 2021-08-06 | 珠海市宏科光电子有限公司 | Manufacturing method of intelligent full-color-mixing COB light source |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240712 Address after: 241000 No.11, Weier Road, East District, Wuhu Economic and Technological Development Zone, Anhui Province Patentee after: Anhui ruituo Electronics Co.,Ltd. Country or region after: China Address before: Buildings E and F of the factory building in Xiawei Village, Ruhu Town, Huicheng District, Huizhou City, Guangdong Province, 519000 Patentee before: HUIZHOU THORLED-OPTO Co.,Ltd. Country or region before: China |
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| TR01 | Transfer of patent right |