CN205900782U - A Broadband Millimeter Wave Antenna Array - Google Patents

Abstract

The utility model discloses a broadband millimeter-wave antenna array, which comprises first and second radiation units, excitation ports, first and second converters, an asymmetrical T-type power divider, a Y-type power divider, first, second, Three metal vias, inductive window; the first and second radiating units are printed on the front of the substrate, and the excitation port is etched on the back of the substrate; the first converter is located behind the 50-ohm coplanar waveguide transmission line; the second converter is located on the first radiating unit Front; the asymmetric T-shaped power divider is located behind the first converter; the first metal via is formed with two rows of vias at the feed and both ends of the first converter; the second metal via is located at the asymmetrical T-shaped power Behind the distributor; the third metal via is located behind the second metal via; the Y-shaped power divider is behind the third metal via; the inductive window is located behind the Y-shaped power divider. The utility model has the advantages of compact structure, small size and good characteristics, and at the same time realizes problems such as wide bandwidth and high gain.

Description

A Broadband Millimeter Wave Antenna Array

technical field

The utility model relates to the technical field of millimeter-wave antennas and array antennas, in particular to a small broadband high-gain broadband millimeter-wave antenna array.

Background technique

Millimeter wave refers to electromagnetic waves with a wavelength range of 1mm-10mm, and its corresponding frequency is 30GHz-300GHz. In recent years, due to the crowded status of spectrum resources and the continuous growth of demand for high-speed communications, the millimeter wave field has become an extremely active field for the research, development and utilization of international electromagnetic spectrum resources. The millimeter wave band has a large number of continuous spectrum resources. It provides the possibility for the realization of ultra-high-speed broadband wireless communication.

In 2010, the National Key Laboratory of Millimeter Waves of Southeast University proposed to develop my country's millimeter wave near-distance communication standard Q-LINKPAN (Q means the Q-band of 40-50 GHz, and LINKPAN means it can support both short-distance high-speed coverage (PAN) and Support for long-distance high-speed transmission (LINK)), and research was carried out in the same year. In December 2013, the Ministry of Industry and Information Technology issued notices on the frequency use of point-to-point wireless access systems in fixed services and broadband wireless access systems in mobile services in the 40-50GHz frequency band. Short-distance high-speed communication (PAN) is allocated 5.9GHz (42.3GHz-47GHz, 47.2GHz-48.4GHz), mobile service planning in the frequency band is used for broadband wireless access systems, and long-distance high-speed communication (LINK) is allocated 3.6GHz (40.5GHz-42.3GHz, 48.4GHz-50.2GHz), the fixed service planning in the frequency band is used for point-to-point wireless access systems. These indicate that my country's millimeter wave communication technology will be launched in the Q-band.

With the rapid development of millimeter-wave wireless communication, many researches focus on how to realize broadband of millimeter-wave antennas. In many literatures on the research and design of millimeter-wave antennas, technologies such as SIW (substrate integrated waveguide), multilayer PCB (printed circuit board), LTCC (low temperature carbon fired ceramics), and MEMS (micro-electromechanical systems) have been mentioned and discussed. use. Due to the free and open 60GHz frequency band, a considerable part of the literature on antenna design is mainly applied to this frequency band, while there are relatively few articles on millimeter wave antennas applied to the Q-band.

Among the existing millimeter-wave antennas, microstrip patch antennas are often used for design, and technologies including L-shaped probe feed, U-shaped slot patch, back cavity structure, and aperture coupling feed are used to widen the frequency band. To realize these broadband structures, most of them adopt low-temperature co-fired ceramic technology (LTCC) to meet the multi-layer structure design requirements of the antenna, which obviously increases the production cost.

Slot antenna array is another millimeter-wave antenna design scheme. It is mostly produced by printed circuit board technology, and the cost is low, but the bandwidth is relatively narrow, which cannot meet the requirements of broadband applications. In addition, some other types of antennas are also designed in the millimeter wave frequency band, such as Yagi antennas, dipole antennas, grid antennas, helical antennas, etc. These antennas have broadband characteristics, but are still relatively complex in structure and not easy to mass-produce.

The utility model is designed by adopting a microstrip patch antenna, and can be realized on a single-layer printed circuit board (PCB). In terms of impedance matching, parasitic patches and inductive windows are also introduced. When available, multiple resonance modes are introduced to improve impedance matching and achieve the purpose of wide impedance bandwidth. At the same time, the characteristics of wide bandwidth, high gain, small size, and independent controllability of the four-element antenna array are realized.

Contents of the invention

The purpose of this utility model lies in the deficiencies and shortcomings of the prior art, and proposes a small broadband high-gain broadband millimeter-wave antenna array. The design requirements of the communication terminal antenna system with controllable performance are suitable for integration into the terminal equipment system.

In order to achieve the above purpose, the technical solution provided by the utility model is: a broadband millimeter-wave antenna array, including two different radiation units, respectively the first radiation unit and the second radiation unit, and the excitation port, the first A converter, a second converter, an asymmetric T-shaped power divider, a Y-shaped power divider, a first metal via, a second metal via, a third metal via, and an inductive window; the first radiating unit and The second radiating unit is printed on the front of the substrate, the first radiating unit and the second radiating unit are rectangular patch units, and the second radiating unit is placed on both sides of the radiating side of the first radiating unit; the excitation port is composed of 50 The ohmic coplanar waveguide is directly fed and etched on the back of the substrate; the first converter is a conversion structure from the coplanar waveguide to the substrate integrated waveguide, which is located behind the 50 ohm coplanar waveguide transmission line; the second converter It is a substrate-integrated waveguide-to-microstrip conversion structure, which is located in front of the first radiation unit; the asymmetric T-shaped power divider is located behind the first converter, and can equally divide the power into two output terminals, but the output terminal There is a phase difference between them; the first metal vias are formed with two rows of vias at the feeder and both ends of the first converter to suppress the generation of surface waves at the feeder; the second metal vias are located at Behind the asymmetric T-shaped power divider, two rows of via holes are formed to generate a phase difference; the third metal via hole is located behind the second metal via hole, forming two rows of via holes for guiding and transmitting energy; The Y-shaped power divider is behind the third metal via, and can equally divide the power into two output ends; the inductive window is located behind the Y-shaped power divider, and on the basis of the third metal via, four A metal via is located inside the outer row of vias for impedance matching.

Compared with the prior art, the utility model has the following advantages and beneficial effects:

1. Compared with the existing millimeter-wave antenna array, the utility model introduces two different microstrip patch radiation units and an inductive window, which effectively increases the impedance bandwidth and realizes the independent controllability of the resonance point. A good impedance bandwidth can be obtained by properly adjusting the size of the patch unit, the distance between the patches, and the via distance of the inductive window. That is, this design can adjust the impedance bandwidth independently.

2. Compared with the existing millimeter-wave antenna array, the utility model introduces a dielectric integrated waveguide (SIW) structure, which can reduce the energy loss of the feeding network and transmit energy to the antenna as much as possible, thereby improving the antenna's performance. Radiation efficiency and peak gain.

3. Compared with the existing millimeter-wave antenna array, the utility model is only made of a single-layer printed circuit board, has a wider impedance bandwidth, and a simpler structure, and is suitable for various communication terminal equipment systems.

Description of drawings

Fig. 1 is a schematic front view of a dual resonant single parasitic patch antenna unit.

Figure 2 is a diagram of the S11 simulation results of the dual-resonance single-parasitic patch antenna unit.

Fig. 3 is a schematic front view of a 4-element antenna array with a dual-resonance single parasitic patch.

Fig. 4 is a diagram of the S11 simulation results of the 4-element antenna array of the dual-resonance single parasitic patch.

FIG. 5 is a schematic front view of an antenna unit of a triple-resonant single parasitic patch.

FIG. 6 is a schematic front view of an antenna unit of a triple-resonant dual parasitic patch.

FIG. 7 is a diagram of the S11 simulation results of the three-resonant antenna unit.

Fig. 8 is a schematic diagram of the front and back of the 4-element antenna array of the three-resonant single parasitic patch.

Fig. 9 is a diagram of the S-parameter simulation results of the 4-element antenna array of the three-resonance single parasitic patch.

Fig. 10 is a schematic view of the front and back of the 4-element antenna array of the triple-resonance dual parasitic patch.

Fig. 11 is a diagram of S-parameter simulation results of a 4-element antenna array with triple-resonance dual parasitic patches.

detailed description

Below in conjunction with specific embodiment the utility model is further described.

Figure 1, Figure 5 and Figure 6 show the antenna units, and Figure 3, Figure 8 and Figure 10 show the 4-element antenna arrays corresponding to the units respectively.

First analyze the antenna unit, Figure 1, Figure 5, and Figure 6 include two different radiating units, namely the first radiating unit 1 and the second radiating unit 2, the second converter 3, and the third metal via 4, In Fig. 5, a sensitive window 11 is also included, and in Fig. 6, the number of second radiation units 2 is increased to two.

Figure 3, Figure 8 and Figure 10 show the 4-element antenna arrays corresponding to the units respectively, and each antenna array includes not only 4 corresponding antenna units, but also an excitation port 10, a first converter 9, an asymmetrical T-shaped A power divider 8 , a Y-shaped power divider 5 , a first metal via 7 , and a second metal via 6 .

The first radiating unit 1 and the second radiating unit 2 are printed on the front of the substrate, the first radiating unit 1 and the second radiating unit 2 are rectangular patch units, and the second radiating unit 2 is placed on the first radiating unit 1 on both sides of the radiation side; the excitation port 10 is directly fed by a 50-ohm coplanar waveguide and etched on the back of the substrate; the first converter 9 is a conversion structure from the coplanar waveguide to the substrate integrated waveguide, located at behind the 50 ohm coplanar waveguide transmission line; the second converter 3 is a substrate-integrated waveguide-to-microstrip conversion structure, located in front of the first radiation unit 1; the asymmetric T-shaped power divider 8 is located in the first After the converter 9, the power can be equally divided into two output terminals, but there is a phase difference between the output terminals. The first metal via hole 7 is formed with two rows of via holes at both ends of the feeder and the first converter 9 for suppressing the generation of surface waves at the feeder; the second metal via hole 6 is located at the asymmetric T Behind the T-type power divider 8, two rows of via holes are formed to generate a phase difference. Adding the phase difference of the asymmetric T-type power divider 8, the phase of the output ports at both ends can be basically kept at 180 degrees, that is, the reverse output The third metal via hole 4 is located behind the second metal via hole 6, forming two rows of via holes for guiding and transmitting energy; the Y-shaped power divider 5 is located behind the third metal via hole 4, and can The power is equally divided into two output terminals; the inductive window 11 is located behind the Y-shaped power divider 5, and on the basis of the third metal via 4, four metal vias are added, which are located inside the outer row of vias. for impedance matching.

Through the combined effect of the patch and the inductive window, three resonance points are generated at the S11 curve of the antenna unit, thereby improving the impedance bandwidth of the antenna, and the relative bandwidth reaches 16.2%.

As shown in Figure 2, the first resonance point 21 in the figure is mainly controlled by the first radiation unit 1, and the resonance point 21 can be moved by adjusting the size of the first radiation unit 1; the second resonance point 22 is controlled by the second radiation unit 1. The unit 2 is generated, and the resonance point 22 can be moved by adjusting the size of the second radiating unit 2 . Figure 3 shows the front and back of the 4-unit antenna array corresponding to the antenna unit in Figure 2, and Figure 4 shows the S11 curve of the antenna shown in Figure 3, and the value of S11 is less than -15dB in the entire working frequency band.

As shown in Figure 7, the first resonance point 71 in the figure is mainly controlled by the first radiating unit 1, by adjusting the size of the first radiating unit 1, the resonance point 71 can be moved; the second resonance point 72 is controlled by the inductive window 11 It is produced by cooperating with the first radiating unit 1. Considering the adjustment of the first radiating unit 1, the resonance point 71 will move, so here only the distance of the inductive window 11 via is adjusted, and the resonance point 72 can be moved; the third resonance point 73 is mainly controlled by the second radiating unit 2. Adjusting the size of the second radiating unit 2 can move the resonance point 73. Comparing Fig. 5 and Fig. 6, the number of the second radiating unit 2 in Fig. 6 is twice that of Fig. 5, so The coupling of the third resonant mode can be made better, as shown in Figure 7, the third resonant point of the solid line is smaller than the attainable S11 value of the dotted line.

Figure 8 is the front and back of the 4-unit antenna array corresponding to the antenna unit in Figure 5, and Figure 9 is the S11 curve of the antenna shown in Figure 8, the value of S11 is less than -13dB in the entire operating frequency band, and the relative impedance bandwidth of -10dB It is about 1% higher than the antenna array in Figure 3.

Figure 10 is the front and back of the 4-element antenna array corresponding to the antenna unit in Figure 6, and Figure 11 is the S11 curve of the antenna shown in Figure 10, and the value of S11 is less than -13dB in the entire working frequency band. The -10dB relative impedance bandwidth is about 3% higher than that of the antenna array in Figure 3, and it is the widest bandwidth among the three antenna arrays in Figure 3, Figure 8 and Figure 10.

The implementation examples described above are only preferred embodiments of the present utility model, and are not intended to limit the scope of implementation of the present utility model, so all changes made according to the shape and principle of the present utility model should be covered by the scope of the present utility model. within the scope of protection.

Claims (1)

1. a kind of broadband millimeter-wave antenna array it is characterised in that: include two different radiating elements, the respectively first radiation Unit and the second radiating element, and excitation port, the first transducer, the second transducer, asymmetric t type power divider, y type Power divider, the first metallic vias, the second metallic vias, the 3rd metallic vias, perceptual window；Described first radiating element and Second radiating element is printed on the front of substrate, and this first radiating element, the second radiating element are rectangular patch unit, and this second Radiating element is placed in the both sides of the first radiating element radiating side；Described excitation port by 50 ohm of co-planar waveguide direct feed, It is etched in the back side of substrate；Described first transducer is the transferring structure of co-planar waveguide to substrate integration wave-guide, positioned at 50 ohm After coplanar waveguide transmission line；Described second transducer is the transferring structure of substrate integration wave-guide to micro-strip, positioned at the first spoke Penetrate before unit；Described asymmetric t type power divider is located at after the first transducer, power can be distributed to two outputs End, but between outfan, have phase contrast；Described first metallic vias are formed with two and are drained through with the first transducer two ends at feed Hole, for suppressing the generation of surface wave at feed；Described second metallic vias are located at after asymmetric t type power divider, shape Two are become to be drained through hole, for producing phase contrast；Described 3rd metallic vias are located at after the second metallic vias, form two and are drained through hole, For guiding and transmission energy；Power, after the 3rd metallic vias, can be distributed to two outputs by described y type power divider End；Described perception window is located at after y type power divider, on the basis of the 3rd metallic vias, adds four metal mistakes Hole, positioned at the inside being drained through outward hole, for impedance matching.