CN205893456U - Single crystal growing furnace silicon solution liquid surface position detecting device and adjustment system - Google Patents
Single crystal growing furnace silicon solution liquid surface position detecting device and adjustment system Download PDFInfo
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- CN205893456U CN205893456U CN201620441734.8U CN201620441734U CN205893456U CN 205893456 U CN205893456 U CN 205893456U CN 201620441734 U CN201620441734 U CN 201620441734U CN 205893456 U CN205893456 U CN 205893456U
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 97
- 239000010703 silicon Substances 0.000 title claims abstract description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 239000007788 liquid Substances 0.000 title claims abstract description 91
- 239000013078 crystal Substances 0.000 title claims abstract description 41
- 238000001514 detection method Methods 0.000 claims abstract description 18
- 238000012360 testing method Methods 0.000 claims abstract description 3
- 238000005259 measurement Methods 0.000 claims description 87
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 238000012790 confirmation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The utility model provides a single crystal growing furnace silicon solution liquid surface position detecting device and the adjustment system who corresponds wherein should the device includes: signal input part, first measuring junction, second measuring junction and control system, wherein control system is used for to signal input part apply signal voltage to through the voltage signal who detects first measuring junction and second measuring junction, the voltage signal who acquires first measuring junction and second measuring junction detects the state, according to the voltage signal detection state, the formation is used for instructing silicon solution liquid surface whether to be in the testing result of reasonable position. The utility model discloses utilize the electric conductivity of silicon solution, after to signal input part apply signal voltage, through the voltage signal detection state that acquires first measuring junction and second measuring junction, automatic and accuracy detects silicon solution liquid surface position to accurate judge whether silicon solution liquid surface is in equitable position, and further carry out corresponding adjustment to the crucible position, make silicon solution liquid surface remain throughout in equitable position.
Description
Technical field
The utility model is related to monocrystalline silicon preparing technical field, more particularly, to a kind of single crystal growing furnace silicon liquid level of solution position detection
Device and adjustment system.
Background technology
Czochralski method mono-crystal furnace, during production monocrystalline silicon, will experience evacuation leak detection, heating material, seeding, amplification turn
Multiple stages such as shoulder, isometrical, ending.Wherein, it is accomplished by controlling silicon liquid level of solution position after seeding process starts, thus being crystalline substance
Bulk-growth creates a suitable temperature field.
In this process, with the continuous growth of silicon single crystal bar, silicon liquid level of solution position can decrease, and is at this moment accomplished by
It is adjusted by crucible lifting system, to keep the constant of liquid level position.In existing control system, using crucible lifting
When being adjusted, it is a theoretical change according to obtained from multiple variable such as crucible shape, charge, speed of growth is through conversion
Change value.So in actual production process, after being adjusted using this theoretical changing value, often occur liquid level position with
Gradually step-down, until the situation of relatively large deviation, is at this moment accomplished by operator in real time to equipment state for the growth of silicon single crystal bar
Modify, thus ensureing being smoothed out of production process.Therefore, automatic simultaneously accurate detection silicon liquid level of solution position, and in inspection
After measuring silicon liquid level of solution position, silicon liquid level of solution position is accurately adjusted to rational position, for prevent above-mentioned the occurrence of
It is of great significance with the automatization level tool improving equipment.
Utility model content
The utility model provides a kind of single crystal growing furnace silicon liquid level of solution position detecting device, to solve to cannot oneself in prior art
The problem of dynamic simultaneously accurate detection silicon liquid level of solution position.
The utility model also provides a kind of single crystal growing furnace silicon liquid level of solution position adjustment, so that solve cannot in prior art
Silicon liquid level of solution is accurately adjusted to the problem of rational position.
In a first aspect, the utility model provides a kind of single crystal growing furnace silicon liquid level of solution position detecting device, described device includes:
Signal input part, the lower surface of wherein said signal input part is always positioned at the lower section of described silicon liquid level of solution；
First measurement end and the second measurement end, the lower surface of wherein said first measurement end and described second measurement end is respectively
Flush with the extreme higher position of the rational position of described silicon liquid level of solution and extreme lower position；
Control system, for described signal input part input voltage signal, and by detect described first measurement end and
The voltage signal of described second measurement end, obtains the voltage signal detection shape of described first measurement end and described second measurement end
State；State is detected according to described voltage signal, generates for indicating whether described silicon liquid level of solution is in the detection of rational position
Result.
As the preferred embodiment of the utility model second aspect, described device also includes:
Machinery adjustment unit, for adjusting described signal input part, described first measurement end and described second measurement end
Position, makes the lower surface of described signal input part be always positioned at the lower section of described silicon liquid level of solution, makes described first measurement simultaneously
End and lower surface extreme higher position and the extreme lower position with the rational position of described silicon liquid level of solution respectively of described second measurement end
Flush.
As the preferred embodiment of the utility model second aspect, described signal input part, described first measurement end and described
Second measurement end is made by rhenium metal material.
As the preferred embodiment of the utility model second aspect, described control system includes plc and industrial computer, described plc
Be connected with described industrial computer, described plc also respectively with described signal input part, described first measurement end and described second measurement end
Connect.
Second aspect, the utility model provides a kind of single crystal growing furnace silicon liquid level of solution position adjustment, and described system includes:
Crucible adjustment unit, for being adjusted to the position of crucible according to the silicon liquid level of solution position detecting, makes institute
State silicon liquid level of solution and be in rational position；
And, single crystal growing furnace silicon liquid level of solution position detecting device as described in relation to the first aspect.
Single crystal growing furnace silicon liquid level of solution method for detecting position and device that the utility model provides, using the conduction of silicon solution
Property, to after signal input part input voltage signal, detected by obtaining the voltage signal of the first measurement end and the second measurement end
State, automatic and accurate detection silicon liquid level of solution position, thus accurately judge whether silicon liquid level of solution is in reasonable position further
Put.In addition, the single crystal growing furnace silicon liquid level of solution position adjustment that the utility model provides, it is being accurately detected silicon liquid level of solution position
Postpone, by adjusting accordingly to the bushing position in single crystal growing furnace, make silicon liquid level of solution remain at rational position, thus
Crystal remains at the growth of the most preferable, most suitable position in growth course, makes whole growth course smooth.
Brief description
In order to be illustrated more clearly that the technical scheme in the utility model embodiment, below will be to required in embodiment description
Accompanying drawing to be used be briefly described it should be apparent that, drawings in the following description are only that of the present utility model some are real
Apply example, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to these accompanying drawings
Obtain other accompanying drawings.
A kind of flow chart of single crystal growing furnace silicon liquid level of solution method for detecting position that Fig. 1 provides for the utility model embodiment；
A kind of structural representation of single crystal growing furnace silicon liquid level of solution position detecting device that Fig. 2 provides for the utility model embodiment
Figure；
Signal input in a kind of single crystal growing furnace silicon liquid level of solution position detecting device that Fig. 3 provides for the utility model embodiment
The position view of end, the first measurement end and the second measurement end；
A kind of structural representation of single crystal growing furnace silicon liquid level of solution position adjustment that Fig. 4 provides for the utility model embodiment
Figure.
Specific embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, new to this practicality below in conjunction with accompanying drawing
Type embodiment is described in further detail.
The utility model utilizes the electric conductivity of silicon solution, to after signal input part input voltage signal, single by obtaining
The voltage signal detection state of the first measurement end of various location and the second measurement end in brilliant stove, thus judge this two surveys
Amount end contact with silicon liquid level of solution situation, can determine whether out whether silicon liquid level of solution is in the conjunction needing during crystal growth further
In reason position, generally this rational position is an altitude range, and that is, silicon liquid level of solution is in the altitude range of this rational position
Shi Jingti all can be with normal growth, and therefore this rational position includes an extreme higher position and an extreme lower position.
The utility model embodiment discloses a kind of single crystal growing furnace silicon liquid level of solution method for detecting position, with reference to shown in Fig. 1, is somebody's turn to do
Method includes:
S1, to signal input part input voltage signal, the lower surface of wherein signal input part is always positioned at silicon liquid level of solution
Lower section；
S2, the voltage signal by detecting the first measurement end and the second measurement end, obtain the first measurement end and the second measurement
The voltage signal detection state at end, the lower surface of the wherein first measurement end and the second measurement end is reasonable with silicon liquid level of solution respectively
The extreme higher position of position and extreme lower position flush；
S3, according to voltage signal detect state, generate for indicating whether silicon liquid level of solution is in the detection of rational position
Result.
Specifically, in step s3, if the first measurement end and the second measurement end all voltage signal is detected it is determined that silicon solution
Liquid level is in the top of rational position；
If the first measurement end and the second measurement end are all not detected by voltage signal it is determined that silicon liquid level of solution is in reasonable position
The lower section put；
If the first measurement end is not detected by voltage signal, the second measurement end voltage signal is detected it is determined that silicon solution liquid
Face is in rational position.
Usually, the extreme higher position of this rational position and extreme lower position are both preferably 2mm, that is, with the distance of this rational position
This rational position all can ensure that crystal normal growth in the range of lower deviation 2mm.Specifically, this rational position is according to existing
The practical condition of field determines, specific determination process method known to those skilled in the art will not be described here.
The single crystal growing furnace silicon liquid level of solution method for detecting position that the utility model provides, using the electric conductivity of silicon solution, to
After signal input part input voltage signal, detect state by obtaining the voltage signal of the first measurement end and the second measurement end, from
Dynamic simultaneously accurate detection silicon liquid level of solution position, thus accurately judge whether silicon liquid level of solution is in rational position further.
The utility model embodiment also discloses a kind of single crystal growing furnace silicon liquid level of solution position detecting device, shown in reference Fig. 2,
This device 20 includes:
The lower surface of signal input part 21, wherein signal input part is always positioned at the lower section of silicon liquid level of solution；
First measurement end 22 and the second measurement end 23, the lower surface of the wherein first measurement end 22 and the second measurement end 23 is respectively
Flush with the extreme higher position of the rational position of silicon liquid level of solution and extreme lower position；
Machinery adjustment unit 24, for adjusting the position of signal input part 21, the first measurement end 22 and the second measurement end 23,
Make the lower surface of signal input part 21 be always positioned at the lower section of silicon liquid level of solution, making the first measurement end 22 and the second measurement end simultaneously
23 lower surface is flushed with the extreme higher position of the rational position of silicon liquid level of solution and extreme lower position respectively；
Control system 25, for signal input part 21 input voltage signal, and by detecting the first measurement end 22 and the
The voltage signal of two measurement ends 23, obtains the voltage signal detection state of the first measurement end 22 and the second measurement end 23；According to electricity
Pressure signal detection state, generates for indicating whether silicon liquid level of solution is in the testing result of rational position.
In original state, silicon liquid level of solution is in the rational position needing during crystal growth, by machinery adjustment list
The position of unit 24 pre-adjusting signal input part 21 is it is ensured that the lower surface of signal input part 21 is always positioned under silicon liquid level of solution
Side, then adjusts the first measurement end 22 and the position of the second measurement end 23 again, makes the first measurement end 22 and the second measurement end 23
Lower surface is flushed with the extreme higher position of this rational position and extreme lower position respectively, now the first measurement end 22 and the second measurement end 23
Lower surface respectively be located at this silicon liquid level of solution above and below, referring in particular to shown in Fig. 3.Usually, this rational position
Extreme higher position and extreme lower position are both preferably 2mm with the distance of this rational position.
Specifically, control system 25 includes plc and industrial computer, is generally arranged at the outside away from single crystal growing furnace.Signal input
End the 21, first measurement end 22 and the second measurement end 23 cause outside single crystal growing furnace by high temperature resistant wire, further with plc respectively
Connect.To after signal input part 21 input voltage signal, within certain interval time, plc passes through to detect the first measurement end
22 and second measurement end 23 voltage signal, to judge silicon liquid level of solution position.
Plc is also connected with industrial computer, can realize interacting between operating personnel and control system 25 using this industrial computer.
Further, since silicon solution temperature is higher, and electric conductivity is poor, therefore signal input part 21, the first measurement end 22
Made by by rhenium metal material with the second measurement end 23, there is preferably high temperature resistant and electric conductivity.
The single crystal growing furnace silicon liquid level of solution position detecting device that the utility model provides, using the electric conductivity of silicon solution, to
After signal input part input voltage signal, detect state by obtaining the voltage signal of the first measurement end and the second measurement end, from
Dynamic simultaneously accurate detection silicon liquid level of solution position, thus accurately judge whether silicon liquid level of solution is in rational position further.
The utility model embodiment also provides a kind of single crystal growing furnace silicon liquid level of solution position adjustment, with reference to shown in Fig. 4, is somebody's turn to do
System includes:
Crucible adjustment unit 41, for being adjusted to the position of crucible according to the silicon liquid level of solution position detecting, makes
Silicon liquid level of solution is in rational position；
And, the single crystal growing furnace silicon liquid level of solution position detecting device 42 as described in above-described embodiment.
Wherein, crucible adjustment unit 41 and control system in described single crystal growing furnace silicon liquid level of solution position detecting device 42
Plc connects, thus realizing the position of crucible is adjusted under the control of plc.
Before whole adjustment system operation, first in plc, default single adjusts adjustment stroke during crucible up or down
And the speed of service.To after signal input part input voltage signal, within certain interval time, plc passes through to detect the first survey
Amount end and the voltage signal of the second measurement end, to judge silicon liquid level of solution position.After plc judges silicon liquid level of solution position,
Determine whether out the state of needs adjustment, and export corresponding signal to control crucible adjustment unit 41 that the position of crucible is carried out
Adjustment.Now by detecting the voltage signal of the first measurement end and the second measurement end, plc still can judge that silicon liquid level of solution is real-time
Position after adjustment, once silicon liquid level of solution is detected and be in rational position, stops adjusting.
Crucible adjustment unit 41 is adjusted to crucible according to default adjustment stroke and the speed of service, default reaching
After single adjustment stroke up or down, when silicon liquid level of solution is still detected and being not in rational position, plc stops to crucible
Adjustment, and remind operating personnel to carry out manual confirmation to silicon liquid level of solution position by industrial computer, then further according to manual confirmation
Actual conditions afterwards carry out corresponding operating, thus operating accident can effectively anti-locking system because of misjudgment.Specifically, need
The situation of manual confirmation to be carried out has following two, and one kind is when the first measurement end and the second measurement end are all not detected by voltage letter
Number, after reaching default single adjustment stroke upwards, when the second measurement end is still not detected by voltage signal, this kind of detection knot
Fruit shows the lower section still in rational position for the silicon liquid level of solution；Another kind is when the first measurement end and the second measurement end all detect
Voltage signal, after reaching the downward adjustment stroke of default single, when the first measurement end still detects voltage signal, Ci Zhongjian
Survey result and show the top still in rational position for the silicon liquid level of solution.
Additionally, plc can be entered with variables such as the binding crystal speed of growth, crystal diameter, single crystal growing furnace in-furnace temperature, brilliant lifting speeds
Row self-adaptative adjustment, thus improve the whole automatization level adjusting system.
The single crystal growing furnace silicon liquid level of solution position adjustment that the utility model provides, is being accurately detected silicon liquid level of solution position
Postpone, by adjusting accordingly to the bushing position in single crystal growing furnace, make silicon liquid level of solution remain at rational position, thus
Crystal remains at the growth of the most preferable, most suitable position in growth course, makes whole growth course smooth.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all in this practicality
Within new spirit and principle, any modification, equivalent substitution and improvement made etc., should be included in guarantor of the present utility model
Within the scope of shield.
Claims (5)
1. a kind of single crystal growing furnace silicon liquid level of solution position detecting device is it is characterised in that described device includes:
Signal input part, the lower surface of wherein said signal input part is always positioned at the lower section of described silicon liquid level of solution；
First measurement end and the second measurement end, the lower surface of wherein said first measurement end and described second measurement end respectively with institute
State the extreme higher position of the rational position of silicon liquid level of solution and extreme lower position flushes；
Control system, for described signal input part input voltage signal, and by detecting described first measurement end and described
The voltage signal of the second measurement end, obtains the voltage signal detection state of described first measurement end and described second measurement end；Root
Detect state according to described voltage signal, generate for indicating whether described silicon liquid level of solution is in the testing result of rational position.
2. device according to claim 1 is it is characterised in that described device also includes:
Machinery adjustment unit, for adjusting the position of described signal input part, described first measurement end and described second measurement end,
Make the lower surface of described signal input part be always positioned at the lower section of described silicon liquid level of solution, making described first measurement end and institute simultaneously
The lower surface stating the second measurement end is flushed with the extreme higher position of the rational position of described silicon liquid level of solution and extreme lower position respectively.
3. device according to claim 1 is it is characterised in that described signal input part, described first measurement end and described
Second measurement end is made by rhenium metal material.
4. device according to claim 1 is it is characterised in that described control system includes plc and industrial computer, described plc
Be connected with described industrial computer, described plc also respectively with described signal input part, described first measurement end and described second measurement end
Connect.
5. a kind of single crystal growing furnace silicon liquid level of solution position adjustment is it is characterised in that described system includes:
Crucible adjustment unit, for being adjusted to the position of crucible according to the silicon liquid level of solution position detecting, makes described silicon
Liquid level of solution is in rational position；
And, the single crystal growing furnace silicon liquid level of solution position detecting device as any one of Claims 1-4.
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| CN201620441734.8U CN205893456U (en) | 2016-05-16 | 2016-05-16 | Single crystal growing furnace silicon solution liquid surface position detecting device and adjustment system |
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| CN201620441734.8U CN205893456U (en) | 2016-05-16 | 2016-05-16 | Single crystal growing furnace silicon solution liquid surface position detecting device and adjustment system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105821469A (en) * | 2016-05-16 | 2016-08-03 | 西安创联新能源设备有限公司 | Single crystal furnace silicon solution liquid level position detection method and device and adjusting system |
| WO2020134555A1 (en) * | 2018-12-28 | 2020-07-02 | 宁夏隆基硅材料有限公司 | Seed crystal fusion method and device |
-
2016
- 2016-05-16 CN CN201620441734.8U patent/CN205893456U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105821469A (en) * | 2016-05-16 | 2016-08-03 | 西安创联新能源设备有限公司 | Single crystal furnace silicon solution liquid level position detection method and device and adjusting system |
| WO2020134555A1 (en) * | 2018-12-28 | 2020-07-02 | 宁夏隆基硅材料有限公司 | Seed crystal fusion method and device |
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