CN205725511U

CN205725511U - A kind of three-level topology circuit

Info

Publication number: CN205725511U
Application number: CN201620321697.7U
Authority: CN
Inventors: 罗劼; 鹿明星; 刘宁
Original assignee: Sineng Electric Co Ltd
Current assignee: Sineng Electric Co Ltd
Priority date: 2016-04-15
Filing date: 2016-04-15
Publication date: 2016-11-23
Anticipated expiration: 2026-04-15

Abstract

The open a kind of three-level topology circuit of this utility model, including bus positive pole BUS+, the first inversion module T1, the second inversion module T2, inverter bridge leg exchange output point A, the 3rd inversion module T3, the 4th inversion module T4, bus negative pole BUS, the 5th inversion module T5, neutral point N and the 6th inversion module.First inversion module T1 and the 5th inversion module T5 is encapsulated as the first half-bridge module, and the upper and lower side of the first half-bridge module connects bus positive pole BUS+ and neutral point N respectively；Second inversion module T2 and the 3rd inversion module T3 is encapsulated as the second half-bridge module, 4th inversion module T4 and the 6th inversion module T6 is encapsulated as the 3rd half-bridge module, the upper and lower side of the second half-bridge module connects the first half-bridge module brachium pontis midpoint and the 3rd half-bridge module brachium pontis midpoint respectively, and the 3rd half-bridge module upper and lower side connects neutral point N and bus negative pole BUS respectively.

Description

A kind of three-level topology circuit

Technical field

This utility model relates to three Level Technology fields, particularly relates to a kind of three-level topology circuit.

Background technology

At present, three Level Technology are increasingly mature, and the application in inverter field is the most extensive, especially exists Photovoltaic industry, three-level inverter circuit is quilt because of advantages such as its pressure grade are high, voltage and current aberration rate is low Industry is widely used.Conventional three-level structure mainly has I type and T-shaped two kinds of topologys, wherein I type structure Feature be individual devices bear resistance to force down, switching loss relatively low, three-level inverter can use higher switch Frequency, improves overall performance, and volume is little and low cost.Limit yet with device itself He encapsulation technology System, the most most of three level block are all within 160A/1200V, it is difficult to break through, powerful three level Module is difficult to realize.Typical high power photovoltaic DC-to-AC converter is for realizing I type three-level structure, and more use is insulated Grid bipolar transistor (IGBT) half-bridge module is spliced into I type structure.Half-bridge module splices the benefit brought It is exactly the high-power half bridge module that can use technology maturation, such as 450A/1200V or 600A/1200V, relatively Increase substantially inverter power grade, it might even be possible to by using wired in parallel to need to reach higher power Ask.But, there is following deficiency in the mode of conventional module splicing: in commutation course, intermodule exists parasitism Inductance, the when that di/dt (current changing rate) change being the biggest, by producing bigger due to voltage spikes, to IGBT Resistance to pressure require height, become limit I type three-level inverter power ascension bottleneck.

Utility model content

The purpose of this utility model is, by a kind of three-level topology circuit, to solve background above technology department Divide the problem mentioned.

For reaching this purpose, this utility model by the following technical solutions:

A kind of three-level topology circuit, it includes bus positive pole BUS+, the first inversion module T1, the second inversion Module T2, inverter bridge leg exchange output point A, the 3rd inversion module T3, the 4th inversion module T4, bus are born Pole BUS-, the 5th inversion module T5, neutral point N and the 6th inversion module；Described first to the 6th inversion Module is identical inversion module, and this inversion module is constituted by paralleled power switches one diode；Institute State the first inversion module T1 and the 5th inversion module T5 and be encapsulated as the first half-bridge module, described first half-bridge mould The upper and lower side of block connects bus positive pole BUS+ and neutral point N respectively；Described second inversion module T2 and the 3rd inverse Become module T3 and be encapsulated as the second half-bridge module, described 4th inversion module T4 and the 6th inversion module T6 encapsulation Being the 3rd half-bridge module, the upper and lower side of described second half-bridge module connects the first half-bridge module brachium pontis midpoint respectively With the 3rd half-bridge module brachium pontis midpoint, the midpoint of the second half-bridge module is inverter bridge leg exchange output point A, institute State the 3rd half-bridge module upper and lower side and connect neutral point N and bus negative pole BUS-respectively.

Especially, described switching tube selects field-effect transistor (Metal Oxide Semiconductor, MOS) Or insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT).

The three-level topology circuit that the utility model proposes overcomes tradition I type tri-level circuit splicing construction and deposits Following problem: there is stray inductance in intermodule in commutation course, current changing rate change the most greatly time, Produce bigger due to voltage spikes, the resistance to pressure of IGBT is required height, limit I type three-level inverter power and carry Rise.The voltage stress that this utility model produces during not only improving device Commutation, reduces circuit turn-on Loss, improves inverter conversion efficiency, and the resistance to pressure of switch tube requires low, it is simple to high-power inverter Design, and simple in construction, reliable operation, low cost.

Accompanying drawing explanation

The three-level topology circuit splicing construction figure that Fig. 1 provides for this utility model embodiment；

The encapsulating structure figure of the three-level topology circuit that Fig. 2 provides for this utility model embodiment.

Detailed description of the invention

For the ease of understanding this utility model, below with reference to relevant drawings, this utility model is carried out more comprehensively Description.Accompanying drawing gives preferred embodiment of the present utility model.But, this utility model can be to be permitted The most different forms realizes, however it is not limited to embodiment described herein.On the contrary, provide these to implement The purpose of example be make disclosure of the present utility model is understood more thorough comprehensively.It should be noted that When an element is considered as " connection " another element, it can be directly to another element or Person may be simultaneously present centering elements.Unless otherwise defined, all of technology used herein and section are academic Language is identical with belonging to the implication that those skilled in the art of the present utility model are generally understood that.Herein at this The term used in the description of utility model is intended merely to describe the purpose of specific embodiment, is not purport It is to limit this utility model.Term as used herein " and/or " include one or more relevant institute Arbitrary and all of combination of list of items.

Refer to shown in Fig. 1 and Fig. 2, in the present embodiment, three-level topology circuit specifically includes bus positive pole BUS+, the first inversion module T1, the second inversion module T2, inverter bridge leg exchange output point A, the 3rd inversion Module T3, the 4th inversion module T4, bus negative pole BUS-, the 5th inversion module T5, neutral point N and 6th inversion module.Described first to the 6th inversion module is identical inversion module, this inversion module Constituted by paralleled power switches one diode；Described switching tube can be selected for field-effect transistor or insulated gate is double Any one of bipolar transistor etc..Insulated gate bipolar transistor is selected in switching tube described in the present embodiment, Concrete, described in described inversion module, the emitter stage of insulated gate bipolar transistor is just connecting diode Pole, the colelctor electrode of insulated gate bipolar transistor connects the negative pole of diode.

Described first inversion module T1 and the 5th inversion module T5 is encapsulated as the first half-bridge module 101, and described The upper and lower side of one half-bridge module 101 connects bus positive pole BUS+ and neutral point N respectively；Described second inversion mould Block T2 and the 3rd inversion module T3 is encapsulated as the second half-bridge module 102, described 4th inversion module T4 and Six inversion module T6 are encapsulated as the 3rd half-bridge module 103, and the upper and lower side of described second half-bridge module 102 is respectively Connect the first half-bridge module 101 brachium pontis midpoint and the 3rd half-bridge module 103 brachium pontis midpoint, the second half-bridge module The midpoint of 102 is inverter bridge leg exchange output point A, and described 3rd half-bridge module 103 upper and lower side connects respectively Neutral point N and bus negative pole BUS-.It is noted that this utility model is possible not only to use factory of Infineon The Econo encapsulation of family, it is possible to use other producers or the half-bridge power module of other encapsulation.

The technical solution of the utility model overcomes asking as follows of tradition I type tri-level circuit splicing construction existence Topic: intermodule exists stray inductance in commutation course, when current changing rate changes the most greatly, produces bigger Due to voltage spikes, requires height to the resistance to pressure of IGBT, limits I type three-level inverter power ascension.This practicality Novel not only improve the voltage stress produced during device Commutation, reduce circuit turn-on loss, improve Inverter conversion efficiency, the resistance to pressure of switch tube requires low, it is simple to the design of high-power inverter, and Simple in construction, reliable operation, low cost.

Note, above are only preferred embodiment of the present utility model and institute's application technology principle.Art technology Those skilled in the art, it will be appreciated that this utility model is not limited to specific embodiment described here, are come by personnel Say and can carry out various obvious change, readjust and substitute without departing from protection model of the present utility model Enclose.Therefore, although by above example, this utility model is described in further detail, but this Utility model is not limited only to above example, in the case of conceiving without departing from this utility model, it is also possible to Including other Equivalent embodiments more, and scope of the present utility model is determined by scope of the appended claims.

Claims

1. a three-level topology circuit, it is characterised in that include bus positive pole BUS+, the first inversion mould Block T1, the second inversion module T2, inverter bridge leg exchange output point A, the 3rd inversion module T3, the 4th inversion Module T4, bus negative pole BUS-, the 5th inversion module T5, neutral point N and the 6th inversion module；Institute Stating the first to the 6th inversion module is identical inversion module, and this inversion module is by a paralleled power switches One diode is constituted；Described first inversion module T1 and the 5th inversion module T5 is encapsulated as the first half-bridge module, The upper and lower side of described first half-bridge module connects bus positive pole BUS+ and neutral point N respectively；Described second inversion Module T2 and the 3rd inversion module T3 are encapsulated as the second half-bridge module, described 4th inversion module T4 and the 6th Inversion module T6 is encapsulated as the 3rd half-bridge module, and the upper and lower side of described second half-bridge module connects the first half respectively Bridge module brachium pontis midpoint and the 3rd half-bridge module brachium pontis midpoint, the midpoint of the second half-bridge module is inverter bridge leg Exchange output point A, described 3rd half-bridge module upper and lower side connects neutral point N and bus negative pole BUS-respectively.

Three-level topology circuit the most according to claim 1, it is characterised in that described switching tube is selected Field-effect transistor or insulated gate bipolar transistor.