CN205709889U - The silicon core using in a kind of production of polysilicon and silicon core assembly thereof - Google Patents
The silicon core using in a kind of production of polysilicon and silicon core assembly thereof Download PDFInfo
- Publication number
- CN205709889U CN205709889U CN201620111041.2U CN201620111041U CN205709889U CN 205709889 U CN205709889 U CN 205709889U CN 201620111041 U CN201620111041 U CN 201620111041U CN 205709889 U CN205709889 U CN 205709889U
- Authority
- CN
- China
- Prior art keywords
- silicon
- silicon core
- strip
- core
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 192
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 26
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 89
- 239000010703 silicon Substances 0.000 claims abstract description 89
- 238000010276 construction Methods 0.000 claims abstract description 5
- 230000013011 mating Effects 0.000 claims description 8
- 239000007787 solid Substances 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000002210 silicon-based material Substances 0.000 abstract description 2
- 238000006722 reduction reaction Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Abstract
The silicon core using in a kind of production of polysilicon and silicon core assembly thereof, relate to field of polysilicon production, silicon core described in the utility model is combined by some perpendicular silicon strips being mutually juxtaposed be set with, leaves gap, it is simple to the reacting gas in reduction furnace passes through between silicon strip between each perpendicular silicon strip.Silicon core cross section after combination is different from the silicon core of traditional solid construction, can obtain bigger crystal surface with less silicon material and amass, thus accelerate the formation of polysilicon.Have an advantage in that: the 1st, drawing and the combination of silicon strip is simple and convenient to operate.2nd, production efficiency is high, and later stage use cost is low.
Description
[technical field]
The utility model relates to field of polysilicon production, in particulars relate to silicon core and the silicon core assembly thereof using in a kind of polysilicon production process.
[background technology]
With the development of photovoltaic (PV) industry, the usage amount of polysilicon is being gradually increased.When producing polysilicon, majority is to utilize reduction furnace to carry out polysilicon also original production, i.e. passes through the surface deposit polycrystalline silicon at silicon core for the chemical vapor deposition (CVD) method.In the prior art, first three filled circles silicon cores or side's silicon core are overlapped to form " Π " character form structure, in reduction furnace, then carry out reduction reaction.Described reduction reaction is to carry out in an airtight reduction furnace.It in reduction furnace, is first overlapped to form the closed-loop path of some " Π " character form structure with silicon core, i.e. carry out " bridging ".Each closed-loop path is made up of two perpendicular silicon cores and a horizontal silicon core.Being connected on the two of closed-loop path perpendicular silicon cores on two electrodes of furnace bottom respectively, two electrodes connect the both positive and negative polarity of dc source respectively.
It for the ease of describing, in the utility model, is referred to as " silicon core assembly " by this according to the silicon core assembly that " Π " character form structure overlaps.
Being placed on one or more silicon core assemblies in reduction furnace, utilizing direct current to heat silicon core, the silicon core assembly that in heating, each group overlaps i.e. is equivalent to a big resistance.Then it in airtight reduction furnace, is passed through hydrogen and trichlorosilane, proceed by the deposition of polysilicon.In reduction furnace, polysilicon can be gradually deposited at the surface formation polycrystalline silicon rod of silicon core.Polycrystalline silicon rod recycling Czochralski furnace after broken is drawn into silicon single crystal rod.
Prior art is when overlapping silicon core assembly, and the silicon core generally using is the filled circles silicon core of diameter about 8mm or the square silicon core cutting 10 × 10 mm being formed with silicon ingot warp.During reduction reaction, the silicon of generation is constantly deposited on silicon wicking surface, and the surface area of silicon core can be increasing, and collision opportunity and quantity to depositional plane (silicon wicking surface) for the reactant gas molecules also can increase therewith.When the sedimentation rate of unit are is constant, the polysilicon amount that surface area more then deposits is also the more.Therefore, when overlapping silicon core assembly, the diameter of used silicon core is bigger, and the growth efficiency of polysilicon is also higher.Comparatively speaking, production efficiency when using big silicon core to be possible not only to improve polycrystalline reduction, simultaneously also can reduce production cost.
To this end, the applicant also attempts to use the solid silicon core of major diameter.The solid silicon core of major diameter no doubt can improve the productivity ratio of reduction process, but the drawing of major diameter silicon core there is also the low problem of production efficiency.The diameter of silicon core is bigger, and it draws also difficulty all the more, and the radical once drawing in stove is also restrained.Additionally, the solid silicon core of employing major diameter punctures the problems such as difficulty is big after there is also inconvenience transport, overlapping.
In order to improve the production efficiency of polysilicon, GT Solar Inc. of the U.S. discloses a kind of cross section for circular hollow silicon core in the 200780015406.5th, entitled " polysilicon deposition improving in the CVD reactor " patent document of its Patent No., substitute traditional thin rod by the tubular silicon filament of a diameter of 50 millimeters, thus improve yield.The full content of this document is used as reference in this patent.
Although this hollow silicon core using above-mentioned patent can solve subproblem of the prior art, but owing to the drawing of hollow silicon core has difficulties, therefore have not yet to see extensive enforcement.
For the problems referred to above, the applicant once submitted a earlier patent application, Application No. 201610002833.0 on January 6th, 2016.That application discloses a kind of technical scheme utilizing tabular or cylindric silicon strip composition hollow silicon core and combinations thereof part, the utility model is to supplement this earlier application.
[content of the invention]
For above-mentioned the deficiencies in the prior art, the utility model provides the silicon core using in a kind of polysilicon production process and silicon core assembly thereof.
Silicon core of the present utility model is combined by some perpendicular silicon strips being mutually juxtaposed be set with, leaves gap, it is simple to the reacting gas in reduction furnace passes through between silicon strip between each perpendicular silicon strip.Silicon core cross section after combination had both been different from the silicon core of traditional solid construction, hollow-core construction silicon core disclosed in the patent application of the Application No. 201610002833.0 submitted on January 6th, 2016 also different from No. 200780015406.5 patents and the applicant of GT Solar Inc. of the U.S., referred to herein as the cylindricality silicon core of " semi-hollow structure ".
The perpendicular silicon strip that the utility model uses can be flat board silicon strip, it is also possible to be the silicon strip with profiled cross-section, such as " L " silicon strip or circular arc silicon strip, can also is that cylindrical silicon strip.
Perpendicular silicon strip being spaced a distance be set with arranged side by side, making reacting gas can enter silicon core inner, this gap can be gradually reduced in crystallization process and finally be made up.
The cylindricality silicon core of described semi-hollow structure, the shape of cross section of its cylindricality can be circular or polygon.
The utility model additionally provides the silicon core assembly using in a kind of production of polysilicon, and this silicon core assembly is made up of the cylindricality silicon core of above-mentioned semi-hollow structure and upper retaining mechanism and lower retaining mechanism.Described lower retaining mechanism is fixed seat by one and is constituted, the upper surface of fixing seat offers some holes with perpendicular silicon strip position and mating shapes or draw-in groove, both use interference fit, are fixed on the lower end of perpendicular silicon strip on fixing seat, are connected electrode with silicon core by means of fixing seat.
In order to make fixing seat to reuse, can be socketed a sheath in the outside of fixing seat, the upper surface at sheath is arranged and the silicon strip perforation fixing hole or draw-in groove position and mating shapes on seat, and sheath is fastened on fixing seat.
Described upper retaining mechanism is the one block of horizontal silicon plate being arranged on perpendicular silicon strip upper end, and the lower surface at horizontal silicon plate arranges hole or the draw-in groove of shape and perpendicular silicon strip position and mating shapes, and both use interference fit, and two groups of semi-hollow silicon cores are connected and fix by horizontal silicon plate.
Use semi-hollow silicon core of the present utility model and assembly thereof, bigger crystal surface can be obtained with less silicon material and amass, thus accelerate the formation of polysilicon.
[brief description]
Fig. 1 is the overall structure schematic diagram of the utility model one embodiment of silicon core assembly；
Fig. 2 is the cross sectional representation that the shape of cross section being made up of flat board silicon strip in the utility model is square semi-hollow cylindricality silicon core；
Fig. 3 is the cross sectional representation that the shape of cross section being made up of flat board silicon strip in the utility model is circular semi-hollow cylindricality silicon core；
Fig. 4 is the cross sectional representation that the shape of cross section being made up of " L " silicon strip in the utility model is rectangular semi-hollow cylindricality silicon core；
Fig. 5 is the cross sectional representation that the shape of cross section being made up of circular arc silicon strip in the utility model is circular semi-hollow cylindricality silicon core；
Fig. 6 is the cross sectional representation that the shape of cross section being made up of circular arc silicon strip in the utility model is square semi-hollow cylindricality silicon core；
Fig. 7 is the cross sectional representation that the shape of cross section being made up of cylindrical silicon strip in the utility model is circular semi-hollow cylindricality silicon core；
Fig. 8 is the cross sectional representation that the shape of cross section being made up of cylindrical silicon strip in the utility model is square semi-hollow cylindricality silicon core；
Fig. 9 is the axial sectional structure schematic diagram of sheath in the utility model；
Figure 10 is the structural representation of upper retaining mechanism in the utility model；
Label in accompanying drawing with the corresponding relation of parts title is: the 1st, horizontal silicon plate；2nd, flat board silicon strip；3rd, seat is fixed；4th, " L " silicon strip；5th, circular arc silicon strip；6th, cylindrical silicon strip；7th, silicon strip perforation；8th, sheath；9th, silicon strip draw-in groove.
[detailed description of the invention]
The utility model is described further by specific embodiment below in conjunction with Figure of description.
Fig. 1 is an embodiment of the utility model silicon core assembly, and it illustrates the overall structure of silicon core assembly.Fig. 2 is the plan structure schematic diagram of Fig. 1.This silicon core assembly includes horizontal silicon plate the 1st, flat board silicon strip 2 and fixing seat 3.It is foursquare hollow silicon core that flat board silicon strip 2 be set with arranged side by side constitutes shape of cross section.Leaving gap between flat board silicon strip 2, making reacting gas can enter silicon core inner, this gap can be gradually reduced in crystallization process and may finally be made up.
Fig. 3 is the cross sectional representation that the shape of cross section being made up of flat board silicon strip in the utility model is circular semi-hollow cylindricality silicon core；
Fig. 4 is the cross sectional representation that the shape of cross section being made up of " L " shape silicon strip in the utility model is rectangular semi-hollow cylindricality silicon core；
Fig. 5 is the cross sectional representation that the shape of cross section being made up of circular arc silicon strip in this practicality newly is circular semi-hollow cylindricality silicon core；
Fig. 6 is the cross sectional representation that the shape of cross section being made up of circular arc silicon strip in the utility model is square semi-hollow cylindricality silicon core；
Fig. 7 is the cross sectional representation that the shape of cross section being made up of cylindrical silicon strip in the utility model is circular semi-hollow cylindricality silicon core；
Fig. 8 is the cross sectional representation that the shape of cross section being made up of cylindrical silicon strip in the utility model is square semi-hollow cylindricality silicon core.
Embodiment shown in Fig. 3-8 is essentially identical with the embodiment shown in Fig. 1-2, and it is different that it differs only in the perpendicular silicon strip shape of cross section being used.This perpendicular silicon strip can also is that circular arc, " L " shape and cylinder in addition to plate shaped silicon strip；By the shape of cross section of semi-hollow cylindricality silicon core becoming combined by perpendicular silicon strip can also is that in addition to foursquare circle and other are polygonal.
Two semi-hollow cylindricality silicon cores can be linked together by upper and lower retaining mechanism.Hole or the draw-in groove of silicon strip position and mating shapes is offered and erected to upper surface at fixing seat 3, and both use interference fit, are fixed on the lower end of perpendicular silicon strip on fixing seat 3 whereby.As shown in Figure 1.
Upper retaining mechanism can be provided in one block of horizontal silicon plate 1 of perpendicular silicon strip upper end, lower surface at horizontal silicon plate 1 arranges hole or the silicon strip draw-in groove 9 of shape and perpendicular silicon strip position and mating shapes, both use interference fit, and the cylindricality silicon core of two groups of semi-hollows is connected and fixes by horizontal silicon plate 1.As shown in Fig. 1 and Figure 10.
In order to make fixing seat to reuse, can be socketed a sheath 8 in the outside of fixing seat, the upper surface at sheath 8 is arranged and the silicon strip perforation 7 fixing hole or draw-in groove position and mating shapes on seat, and sheath is fastened on fixing seat.As shown in Figure 9.
It is more than only by way of several embodiment to be illustrated the utility model.It will be apparent that various deformation can also be made according to these embodiments, such as: the angle that " L " shape erects its both sides of silicon strip can be adjusted as the case may be；In addition to the perpendicular silicon strip of " L " tee section and circular section, can also use or the perpendicular silicon strip of other shapes.The cross section of the semi-hollow silicon core that a combination thereof goes out can also according to circumstances use other shapes in addition to polygon and circle.This is not will be obvious to those skilled in the art that repeat them here.
For the certain silicon core of cross-sectional area, use the utility model this combined semi hollow silicon core can obtain bigger surface area.In reduction furnace, silicon core and the touch opportunity of reacting gas just strengthen, and collision opportunity and quantity to depositional plane (silicon wicking surface) for the reactant gas molecules also can increase therewith.Also the more, the growth efficiency of polysilicon also improves the polysilicon amount that the surface area of silicon core more then deposits therewith.
Have an advantage in that:
1st, drawing and the combination of silicon strip is simple and convenient to operate.
2nd, production efficiency is high, and later stage use cost is low.
Claims (10)
1. the silicon core using in a production of polysilicon, it is characterised in that: this silicon core is put together by many perpendicular silicon strips, and each perpendicular silicon strip is mutually juxtaposed and leaves gap, and the silicon core after split is the cylindricality silicon core of semi-hollow.
2. silicon core as claimed in claim 1, it is characterised in that: described perpendicular silicon strip is flat board silicon strip (2).
3. silicon core as claimed in claim 1, it is characterised in that: the cross section of described perpendicular silicon strip is " L " type silicon strip (4).
4. silicon core as claimed in claim 1, it is characterised in that: the cross section of described perpendicular silicon strip is circular arc silicon strip (5).
5. silicon core as claimed in claim 1, it is characterised in that: described perpendicular silicon strip is cylindrical silicon strip (6).
6. silicon core as claimed in claim 1, it is characterised in that: the shape of cross section of split later half hollow-core construction silicon core is circle.
7. silicon core as claimed in claim 1, it is characterised in that: the shape of cross section of split later half hollow-core construction silicon core is polygon.
8. the silicon core assembly using in production of polysilicon, this silicon core assembly is made up of silicon core and upper retaining mechanism and lower retaining mechanism, it is characterised in that: described silicon core uses the semi-hollow structure silicon core described in claim 1.
9. silicon core assembly as claimed in claim 8, it is characterized in that: described lower retaining mechanism is fixed seat (3) by one and constituted, hole or the draw-in groove of silicon strip position and mating shapes is offered and erected to the upper surface of fixing seat (3), both use interference fit, are fixed on the lower end of perpendicular silicon strip on fixing seat (3).
10. silicon core assembly as claimed in claim 8, it is characterized in that: described upper retaining mechanism is the one piece of horizontal silicon plate (1) being arranged on perpendicular silicon strip upper end, lower surface horizontal silicon plate (1) arranges hole or the silicon strip draw-in groove (9) of shape and perpendicular silicon strip position and mating shapes, both use interference fit, and the cylindricality silicon core of two groups of semi-hollows is connected and fixes by horizontal silicon plate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620111041.2U CN205709889U (en) | 2016-02-04 | 2016-02-04 | The silicon core using in a kind of production of polysilicon and silicon core assembly thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620111041.2U CN205709889U (en) | 2016-02-04 | 2016-02-04 | The silicon core using in a kind of production of polysilicon and silicon core assembly thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205709889U true CN205709889U (en) | 2016-11-23 |
Family
ID=57333745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620111041.2U Active CN205709889U (en) | 2016-02-04 | 2016-02-04 | The silicon core using in a kind of production of polysilicon and silicon core assembly thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205709889U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105502407A (en) * | 2016-02-04 | 2016-04-20 | 洛阳金诺机械工程有限公司 | Silicon core used in polycrystalline silicon production and silicon core component thereof |
-
2016
- 2016-02-04 CN CN201620111041.2U patent/CN205709889U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105502407A (en) * | 2016-02-04 | 2016-04-20 | 洛阳金诺机械工程有限公司 | Silicon core used in polycrystalline silicon production and silicon core component thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101979721A (en) | Silicon core rods and silicon core structure for growth of polycrystalline silicon | |
| CN205709889U (en) | The silicon core using in a kind of production of polysilicon and silicon core assembly thereof | |
| CN205376542U (en) | Crystalline silicon solar battery | |
| CN105417542A (en) | Hollow silicon core and silicon core assembly thereof | |
| CN101864591A (en) | Improving method of silicon monocrystalline furnace thermal field system | |
| CN206685356U (en) | A kind of graphite frame for board-like PECVD device | |
| CN105502407A (en) | Silicon core used in polycrystalline silicon production and silicon core component thereof | |
| CN103158200B (en) | A kind of bridging method of C-shaped silicon core | |
| CN105460939B (en) | A kind of hollow silicon core and its silicon core assembly | |
| CN205709890U (en) | A kind of silicon core assembly | |
| CN103158202B (en) | A kind of bridging method of hollow silicon core | |
| CN202208775U (en) | Vertical split Czochralski single crystal crucible | |
| CN105600788B (en) | A kind of silicon core assembly | |
| CN101830467B (en) | Polycrystalline silicon decomposing furnace | |
| CN206466972U (en) | A kind of hollow silicon core and its silicon core assembly | |
| CN101794828B (en) | film system of thin film solar cell, thin film solar cell and manufacturing method thereof | |
| CN204079754U (en) | Pressure roller | |
| CN208293115U (en) | A kind of cooling multicore coil of low power consuming Two-way Cycle and silicon core making apparatus | |
| CN102344141B (en) | Socket joint type silicon core lapping structure and method capable of increasing contact area and reducing electric resistance | |
| CN103077984A (en) | Double-PIN junction double-sided solar cell with N-type silicon substrate | |
| CN217298092U (en) | Silicon core assembly for growing polycrystalline silicon rod | |
| CN207529944U (en) | Solar cell | |
| CN202352714U (en) | Flow homogenization plate capable of improving diffusion uniformity | |
| CN205790011U (en) | A kind of novel solar battery assembly | |
| CN215277249U (en) | Reation kettle is used in anhydrous potassium acetate production with adjustment mechanism |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |