CN205647446U - Transimpedance amplifier's DC bias circuit - Google Patents
Transimpedance amplifier's DC bias circuit Download PDFInfo
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- CN205647446U CN205647446U CN201620364675.9U CN201620364675U CN205647446U CN 205647446 U CN205647446 U CN 205647446U CN 201620364675 U CN201620364675 U CN 201620364675U CN 205647446 U CN205647446 U CN 205647446U
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- switching tube
- impedance amplifier
- grid
- bias circuit
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- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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Abstract
The utility model provides a transimpedance amplifier's DC bias circuit, include: operational amplifier, a transimpedance amplifier and the 2nd transimpedance amplifier, a transimpedance amplifier includes input switch pipe M1 and cascode's switch tube M2 with it, the 2nd transimpedance amplifier includes the switch tube M2' of input switch pipe M1' and cascode setting with it, switch tube M1's' grid and drain electrode are connected with operational amplifier's positive pole, negative pole respectively, operational amplifier's output is connected with switch tube M2, M2's' grid respectively, make the 2nd transimpedance amplifier and operational amplifier form a negative feedback network, through the biasing to switch tube M2, switch tube M2' grid voltage for switch tube M1, switch tube M1's' grid voltage is the same with the drain voltage value. Consequently, when M2's grid voltage vg was too high or low excessively, M1's grid leak voltage vgd all equaled 0, output end signal eye pattern approximately and serious degradation can not appear.
Description
Technical field
This utility model relates to a kind of trans-impedance amplifier, particularly relates to the direct current biasing electricity of a kind of trans-impedance amplifier
Road.
Background technology
Trans-impedance amplifier is that current signal changes into voltage signal the electronic circuit amplified, frequently as
Optic communication receives the front-end circuit of chip, needs sufficiently large input dynamic range with full across resistance amplifying circuit
Foot application, in order to ensure can to process big signal across resistance amplifying circuit, needs introducing in resistance amplifying circuit
Automatic gain control mechanism, i.e. when input signal is more than certain value, circuit automatic gain control loop starts
Work, reduces the gain across resistance amplifying circuit, thus reaches to process the function of big signal input.
Prior art is as it is shown in figure 1, M1 is input pipe, and M2 does cascade pipe, and R1 is load resistance,
M3 forms buffer stage with current source, and Rf is as bridging resistance.They compositions are across resistance amplifying circuit TIA.M4
Being the metal-oxide-semiconductor of automatic growth control, when inputting photoelectric current and exceeding certain value, M4 would operate in linear zone,
Control TIA across resistance.Above-mentioned trans-impedance amplifier, when the grid voltage Vg of M2 is too high or too low, exports
All can there is serious deterioration in end signal eye pattern:
If 1. Vg is too low, the drain-to-gate voltage Vgd of M1 can be made to be much smaller than 0, when AGC works, by
Rise in Vagc voltage, the DC voltage Vout of outfan OUT can be made to reduce, when being reduced to electric current source capsule
Linear zone time, the non-linear increase of Vout signal can be made, thus have a strong impact on the quality of eye pattern.
If 2.. Vg is too high, the drain-to-gate voltage Vgd of M1 can be made to be much larger than 0, when AGC works, by
Rise in Vagc voltage, the DC voltage Vout of outfan OUT can be made to increase, so that the grid of M3
Pole tension rises so that the electric current flowing through R1 reduces, thus reduces the electric current of M1, reduces its ft value,
Circuit bandwidth is declined, thus deteriorates eye pattern.
Utility model content
Technical problem underlying to be solved in the utility model is to provide the direct current biasing of a kind of trans-impedance amplifier
Circuit, produces suitable M2 grid voltage, it is ensured that the drain-to-gate voltage Vgd of M1 all approximates 0, thus
Making when AGC works, Vagc voltage rises, and output unidirectional current also will not significant change, it is ensured that outfan
Signal eye diagram does not haves serious deterioration.
In order to solve above-mentioned technical problem, this utility model provides the direct current biasing of a kind of trans-impedance amplifier
Circuit, including: operational amplifier, the first trans-impedance amplifier and the second trans-impedance amplifier；
Described first trans-impedance amplifier includes an input switch pipe M1 and the switching tube that cascade is arranged therewith
M2；Described second trans-impedance amplifier includes an input switch pipe M1 ' and the switching tube that cascade is arranged therewith
M2’；
The grid of described switching tube M1 ' and drain electrode are respectively with the positive pole of operational amplifier, negative input even
Connect；The outfan of operational amplifier respectively with switching tube M2, M2 ' grid be connected；Second is made to put across resistance
Big device forms a negative feedback network with operational amplifier, by switch tube M2, switching tube M2 ' grid electricity
Pressure biasing so that switching tube M1, switching tube M1 ' grid voltage identical with drain voltage value.
In a preferred embodiment: described switching tube M1, difference between the grid of switching tube M1 ' and source electrode
It is provided with across resistance Rf, Rf '.
Drain electrode in a preferred embodiment: described switching tube M2, M2 ' respectively by load resistance R1,
R1 ' is connected with VDD.
In a preferred embodiment: described first trans-impedance amplifier also includes switching tube M3, its grid and switch
The drain electrode of pipe M2 connects, source ground, and drain electrode is connected with VDD.
In a preferred embodiment: described second trans-impedance amplifier also includes switching tube M3 ', its grid with open
The drain electrode closing pipe M2 ' connects, source ground, and drain electrode is connected with VDD.
In a preferred embodiment: described switching tube M1, M2, M3, M1 ', M2 ', M3 ' are MOS
Pipe or audion.
In a preferred embodiment: also include a switching tube M4, its grid is connected with Vagc, source electrode with open
The grid closing pipe M1 connects, and drain electrode is connected with the drain electrode of switching tube M1.
In a preferred embodiment: described switching tube M4 is metal-oxide-semiconductor.
In a preferred embodiment: described second trans-impedance amplifier is the mirror image circuit of the first trans-impedance amplifier.
In a preferred embodiment: the switching tube M1 ' in described second trans-impedance amplifier, M2 ', M3 '
Compared to switching tube M1, M2, M3 scaled down, and load resistance R1 ' is compared to load resistance R1 etc.
Scaling.
Compared to prior art, the technical solution of the utility model possesses following beneficial effect:
This utility model provides the DC bias circuit of a kind of trans-impedance amplifier, puts across resistance first
On the basis of big device, add an operational amplifier, second trans-impedance amplifier.Second amplifies across resistance
A negative feedback network is defined, by switch tube M2, switching tube M2 ' between device and operational amplifier
The biasing of grid voltage so that the grid voltage of the second trans-impedance amplifier breaker in middle pipe M1 ' approximates drain electrode electricity
Pressure, so that the grid voltage of the switching tube M1 in the first trans-impedance amplifier also approximates drain voltage i.e.
Vg,M1≈Vd,M1.Thus ensureing when AGC works, M2 grid is biased in suitable voltage, it is ensured that M1's
Drain-to-gate voltage Vgd all approximates 0, and output end signal eye pattern is all without the excessive variation because of DC voltage
Deterioration.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of trans-impedance amplifier in prior art；
Fig. 2 is the DC bias circuit figure of trans-impedance amplifier in this utility model preferred embodiment.
Detailed description of the invention
Below in conjunction with drawings and Examples, this utility model is described in further detail.
Reference Fig. 2, the DC bias circuit of a kind of trans-impedance amplifier, including: operational amplifier I 0, first
Trans-impedance amplifier TIA and the second trans-impedance amplifier TIA dummy；
Described first trans-impedance amplifier TIA include an input switch pipe M1 and therewith cascade arrange open
Close pipe M2；Described second trans-impedance amplifier include an input switch pipe M1 ' and therewith cascade arrange
Switching tube M2 '；
The grid of described switching tube M1 ' and drain electrode are respectively with the positive pole of operational amplifier, negative input even
Connect；The outfan of operational amplifier respectively with switching tube M2, M2 ' grid be connected；Second is made to put across resistance
Big device forms a negative feedback network with operational amplifier, by switch tube M2, switching tube M2 ' grid electricity
The biasing of pressure so that the grid voltage of the second trans-impedance amplifier breaker in middle pipe M1 ' approximates drain voltage, from
And make the grid voltage of the switching tube M1 in the first trans-impedance amplifier also approximate drain voltage i.e.
Vg,M1≈Vd,M1.Thus ensure when AGC works, no matter the grid voltage of switching tube M2 is too high or too low, defeated
Go out end signal eye pattern to deteriorate all without because of galvanic excessive variation.
In the present embodiment, remaining knot of the first trans-impedance amplifier TIA and the second trans-impedance amplifier TIA dummy
Structure is:
Described switching tube M1, be respectively arranged with between the grid of switching tube M1 ' and source electrode across resistance Rf, Rf '.
Described switching tube M2, M2 ' drain electrode respectively by load resistance R1, R1 ' are connected with VDD.
Described first trans-impedance amplifier also includes switching tube M3, and its grid is connected with the drain electrode of switching tube M2,
Source ground, drain electrode is connected with VDD.Described second trans-impedance amplifier also includes switching tube M3 ', its grid
Drain electrode with switching tube M2 ' is connected, source ground, and drain electrode is connected with VDD.
In the present embodiment, described switching tube M1, M2, M3, M1 ', M2 ', M3 ' be metal-oxide-semiconductor or three
Pole is managed.
And, controlling the metal-oxide-semiconductor M4 of automatic gain, its grid is connected with Vagc, source electrode and switching tube M1
Grid connect, drain electrode be connected with the drain electrode of switching tube M1.
In the present embodiment, circuit structure and the first trans-impedance amplifier mirror image of described second trans-impedance amplifier set
Put,
And switching tube M1 ' in described second trans-impedance amplifier, M2 ', M3 ' compared to switching tube M1,
M2, M3 scaled down, and load resistance R1 ' is compared to the amplification of load resistance R1 equal proportion, thus subtract
Small area analysis.
The above, only this utility model preferably detailed description of the invention, but protection domain of the present utility model is also
It is not limited to this, the technical scope that any those familiar with the art discloses at this utility model
In, the change that can readily occur in or replacement, all should contain within protection domain of the present utility model.Therefore,
Protection domain of the present utility model should be as the criterion with scope of the claims.
Claims (10)
1. the DC bias circuit of a trans-impedance amplifier, it is characterised in that including: operational amplifier, the first trans-impedance amplifier and the second trans-impedance amplifier；
Described first trans-impedance amplifier includes an input switch pipe M1 and the switching tube M2 that cascade is arranged therewith；Described second trans-impedance amplifier includes an input switch pipe M1 ' and the switching tube M2 ' that cascade is arranged therewith；
The grid of described switching tube M1 ' and drain electrode are connected with positive pole, the negative input of operational amplifier respectively；The outfan of operational amplifier respectively with switching tube M2, M2 ' grid be connected；Make the second trans-impedance amplifier and operational amplifier form a negative feedback network, by switch tube M2, the biasing of switching tube M2 ' grid voltage so that switching tube M1, switching tube M1 ' grid voltage identical with drain voltage value.
The DC bias circuit of a kind of trans-impedance amplifier the most according to claim 1, it is characterised in that: described switching tube M1, be respectively arranged with between the grid of switching tube M1 ' and source electrode across resistance Rf, Rf '.
The DC bias circuit of a kind of trans-impedance amplifier the most according to claim 2, it is characterised in that: described switching tube M2, M2 ' drain electrode respectively by load resistance R1, R1 ' are connected with VDD.
The DC bias circuit of a kind of trans-impedance amplifier the most according to claim 3, it is characterised in that: described first trans-impedance amplifier also includes switching tube M3, and its grid is connected with the drain electrode of switching tube M2, source ground, and drain electrode is connected with VDD.
The DC bias circuit of a kind of trans-impedance amplifier the most according to claim 4, it is characterised in that: described second trans-impedance amplifier also includes switching tube M3 ', and its grid is connected with the drain electrode of switching tube M2 ', source ground, and drain electrode is connected with VDD.
The DC bias circuit of a kind of trans-impedance amplifier the most according to claim 5, it is characterised in that: described switching tube M1, M2, M3, M1 ', M2 ', M3 ' be metal-oxide-semiconductor or audion.
The DC bias circuit of a kind of trans-impedance amplifier the most according to claim 1, it is characterised in that: also including a switching tube M4, its grid is connected with Vagc, and source electrode is connected with the grid of switching tube M1, and drain electrode is connected with the drain electrode of switching tube M1.
The DC bias circuit of a kind of trans-impedance amplifier the most according to claim 1, it is characterised in that: described switching tube M4 is metal-oxide-semiconductor.
The DC bias circuit of a kind of trans-impedance amplifier the most according to claim 1, it is characterised in that: described second trans-impedance amplifier is the mirror image circuit of the first trans-impedance amplifier.
The DC bias circuit of a kind of trans-impedance amplifier the most according to claim 1, it is characterized in that: switching tube M1 ' in described second trans-impedance amplifier, M2 ', M3 ' are compared to switching tube M1, M2, M3 scaled down, and load resistance R1 ' amplifies compared to load resistance R1 equal proportion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620364675.9U CN205647446U (en) | 2016-04-27 | 2016-04-27 | Transimpedance amplifier's DC bias circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620364675.9U CN205647446U (en) | 2016-04-27 | 2016-04-27 | Transimpedance amplifier's DC bias circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205647446U true CN205647446U (en) | 2016-10-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620364675.9U Withdrawn - After Issue CN205647446U (en) | 2016-04-27 | 2016-04-27 | Transimpedance amplifier's DC bias circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205647446U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026940A (en) * | 2016-04-27 | 2016-10-12 | 厦门优迅高速芯片有限公司 | Direct-current bias circuit of trans-impedance amplifier |
-
2016
- 2016-04-27 CN CN201620364675.9U patent/CN205647446U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026940A (en) * | 2016-04-27 | 2016-10-12 | 厦门优迅高速芯片有限公司 | Direct-current bias circuit of trans-impedance amplifier |
| CN106026940B (en) * | 2016-04-27 | 2018-12-18 | 厦门优迅高速芯片有限公司 | A kind of DC bias circuit of trans-impedance amplifier |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20161012 Effective date of abandoning: 20181218 |
|
| AV01 | Patent right actively abandoned |