CN205620437U - Experimental universal fixturing of laoization of diode power, reverse biased - Google Patents
Experimental universal fixturing of laoization of diode power, reverse biased Download PDFInfo
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- CN205620437U CN205620437U CN201620383799.1U CN201620383799U CN205620437U CN 205620437 U CN205620437 U CN 205620437U CN 201620383799 U CN201620383799 U CN 201620383799U CN 205620437 U CN205620437 U CN 205620437U
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- 238000012360 testing method Methods 0.000 claims abstract description 111
- 230000032683 aging Effects 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000002474 experimental method Methods 0.000 claims abstract description 14
- 230000015556 catabolic process Effects 0.000 claims description 26
- 238000006731 degradation reaction Methods 0.000 claims description 26
- 239000011148 porous material Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 3
- 238000012216 screening Methods 0.000 abstract description 19
- 238000009434 installation Methods 0.000 abstract description 10
- 230000005611 electricity Effects 0.000 abstract description 7
- 235000008429 bread Nutrition 0.000 abstract 5
- 238000000034 method Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000004886 process control Methods 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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Abstract
The utility model discloses an experimental universal fixturing of laoization of diode power, reverse biased, it includes diode mounting substrate and bread board, is provided with a plurality of diodes installation tube holes by the test diode that are used for installing on the diode mounting substrate, and diode mounting substrate's a side is provided with built -in a plurality of binding post's draw -in groove, and a binding post installs the tube hole electricity with the diode respectively and is connected, be provided with a plurality of test circuits on the bread board, a side of bread board is provided with bayonet socket corresponding with the draw -in groove and mutual joint, is provided with a plurality of the 2nd binding post on the bayonet socket, and the 2nd binding post is connected with the test circuit electricity respectively, the bread board includes diode reverse biased bread board and diode power ageing tests circuit board. The utility model discloses only need diode product of installation can accomplish power aging and reverse biased experiment to realized that product reverse biased and power aging zero clearance are experimental, shortened the screening test time of product.
Description
Technical field
This utility model relates to a kind of diode test fixture, and specifically a kind of diode power is aging
Reverse-biased experiment universal fixture, belongs to electronic devices and components test device technique field.
Background technology
Along with the use of diode is more and more extensive, the use environment of diode is the most each different.In order to
Meet the requirement of various use environment, need, when producing diode, diode is carried out screening test.Screening examination
Test: refer to the test carried out for selecting the product with certain characteristic or the product of rejecting initial failure.Logical
Crossing screening test and be primarily referred to as rejecting the product of initial failure and the test that carries out, it is a kind of to carry out product
The nondestructive test of one hundred percent inspection, by applying environmental stress according to certain program, inspires product and dives
Design and manufacturing defect, in order to reject initial failure product, reduce crash rate.The screening one of components and parts
As the contract that should be signed according to military electronic component and device specification or both sides of supply and demand by components and parts producer carry out.
Diode screening test mainly includes diode power degradation and the reverse-biased test of diode.One,
Diode power degradation: principle and the effect of power aging screening apply certain to electronic devices and components
Power, simulates its working environment, makes they internal incipient faults accelerate to come out, then carries out electrically
Parameter measurement, screening is rejected those and was lost efficacy or the components and parts of variate, as far as possible initial failure eliminated normally
Before use.The guiding theory of power aging screening is to screen through power aging, defective components and parts
Can lose efficacy, and high-quality product can be passed through, it must be noted here that the correct and additional condition of test method is suitable, no
Then, the components and parts participating in screening may be caused unnecessary damage.Two, the reverse-biased test of diode: two poles
Managing reverse-biased test is to make product at high temperature plus reverse biased, and this is a kind of harsh working method, due to
Under high temperature, leakage current increases, and under the effect of temperature and electric field, ropy device will lose efficacy, with this
Method may determine that and produces the quality criticized, the especially level of high-temperature behavior.
The aging reverse-biased test of diode power at present needs to be respectively adopted reverse-biased test fixture and carries out reverse-biased test
Power aging test is carried out, the problems with that this test method exists with employing power aging test fixture:
Existing reverse-biased test fixture is a resistance of respectively being connected the diode all pipes position carrying out testing, the most again
In parallel.Existing power aging test fixture is to carry out all Guan Weixian of the diode electricity in parallel tested
Resistance and LED light, connect the most again.Reverse-biased and the power aging test fixture of this separately design, enters
The product of row filter test need to be respectively installed on reverse-biased test fixture and power aging test fixture, i.e. one
The reverse-biased installation of product once, install once again by power aging, during actually generating, and glass envelope and plastic packaging two
Pole pipe product owing to its volume is little, the unconspicuous feature of product polarity of electrode, product power aging install and
There is more difficulty in test aspect, so that screening process workload is very big, test fixture the most easily damages
Bad, too increase axial product stress damage.
In order to accelerate screening progress, partially try with power aging in the urgent need to redesigning a kind of new anti-diode
Test fixture.
Utility model content
For the deficiency overcoming above-mentioned prior art to exist, the purpose of this utility model is to provide a kind of diode
The reverse-biased experiment universal fixture of power aging, it is capable of, and low pressure small area analysis diode is reverse-biased and power aging
The gapless test of test, thus shorten the screening test time of product, also make screening process control to become pole
For convenience.
It is aging reverse-biased that this utility model solves the technical scheme is that diode power of its technical problem
Experiment universal fixture, is characterized in that: include diode mounting substrate and breadboard, and described diode is pacified
Being provided with some diodes on dress substrate and install pore, a side of diode mounting substrate is provided with draw-in groove,
Being provided with some first binding posts in described draw-in groove, the first described binding post is installed with diode respectively
Pore electrically connects；Described diode installs pore in order to install tested diode；On described breadboard
Being provided with some hookups, a side of breadboard is provided with corresponding with draw-in groove and mutual clamping
Bayonet socket, described bayonet socket is provided with some second binding posts corresponding with the first binding post, described
Second binding post electrically connects with hookup respectively；Described breadboard includes diode reverse-biased test electricity
Road plate and diode power degradation circuit board.
Preferably, the reverse-biased breadboard of described diode is provided with the reverse-biased hookup of diode, described
The reverse-biased hookup of diode and the second wiring being arranged on the mouth of checkpost, diode reverse-biased breadboard side
Terminal electrically connects.
Preferably, the reverse-biased hookup of described diode includes and tested two poles on diode mounting substrate
The reverse-biased test resistance that pipe quantity is consistent, with supply voltage phase after one end parallel connection of described reverse-biased test resistance
Even, the other end of reverse-biased test resistance electrically connects with the second binding post on bayonet socket respectively, on bayonet socket other
Ground connection after the second binding post parallel connection not being connected with reverse-biased test resistance.
Preferably, described diode power degradation circuit board is provided with diode power degradation electricity
Road, described diode power degradation circuit be arranged on diode power degradation circuit board one side
The second binding post electrical connection on bayonet socket.
Preferably, what described diode power degradation circuit included with on diode mounting substrate is tested
Power aging test resistance that number of diodes is consistent and LED light, described power aging test resistance
Alternateing composition series circuit with LED light, one end of series circuit is connected with supply voltage, series connection
The other end ground connection of circuit；One power aging test resistance and a LED light form one group of test electricity
Road, often the two ends of group test circuit electrically connect with the second binding post on bayonet socket respectively.
The beneficial effects of the utility model are:
The utility model proposes a kind of reverse-biased experiment universal fixture of new power aging, diode product is only
Need to install and once can complete power aging and reverse-biased test, it is achieved thereby that product is reverse-biased and power aging without
Gap experiment, shortens the screening test time of product, accelerates the test progress of product, also makes to screen
Process control becomes extremely convenient.
Compared with prior art, this utility model mainly has the advantage that
The most tested components and parts are without carrying out secondary installing, and the workload of tested components and parts installation and removal subtracts
Half as large, improve work efficiency.
2. for axial product, owing to without secondary installing, decreasing the stress caused by installation and removal and damaging
Wound.
3. achieve product test on fixture, improve test speed, needed for decreasing product test
Turnaround time, next step power aging test after reverse-biased off-test, can be quickly carried out.
4., owing to achieving the reverse-biased gapless test with power aging of product, screening process controls to become extremely
Convenient, especially for the batch that those product quantities are bigger, after product splits into small batch, these small batches
Product can complete reverse-biased and power aging test, the risk during reducing in time.
5. due to without carrying out secondary installing, it is achieved that product from just measuring the one_to_one corresponding of terminal test,
Need the parameter of product is done experiment the easiest when front and back contrasting.
Accompanying drawing explanation
Fig. 1 is this utility model carries out two poles diode mounting substrate and breadboard being installed together
Structural representation during pipe test；
Fig. 2 is this utility model structural representation when diode mounting substrate and breadboard being separated；
Fig. 3 is the structural representation of diode mounting substrate of the present utility model；
Fig. 4 is the structural representation of the reverse-biased breadboard of diode of the present utility model；
Fig. 5 is the structural representation of diode power degradation circuit board of the present utility model；
In figure, 1 diode mounting substrate, 11 diodes install pores, 12 draw-in grooves, 2 breadboards,
21 bayonet sockets, the reverse-biased breadboard of 2-1 diode, 21-1 diode reverse-biased breadboard bayonet socket, 2-2
Diode power degradation circuit board, 21-2 diode power degradation circuit board bayonet socket.
Detailed description of the invention
In order to simplify disclosure of the present utility model, hereinafter parts and setting to specific examples are described.
It should be noted that, parts illustrated in the accompanying drawings are not drawn necessarily to scale.This utility model eliminates public affairs
Know that the description of assembly and treatment technology and process is to avoid being unnecessarily limiting this utility model.
As shown in Figures 1 to 5, a kind of aging reverse-biased test universal clamp of diode power of the present utility model
Tool, it includes diode mounting substrate 1 and breadboard 2, described diode mounting substrate 1 is provided with
Pore 11 installed by some diodes, and a side of diode mounting substrate 1 is provided with draw-in groove 12, described draw-in groove
Some first binding posts (a11, a12, a13 ... a1n and b11, b12, b13 ... b1n) it are provided with in 12,
The first described binding post is installed pore 11 with diode respectively and is electrically connected；Pore 11 installed by described diode
In order to install tested diode (D11, D12, D13 ... D1n)；If being provided with on described breadboard 2
Dry test circuit, a side of breadboard 2 is provided with the bayonet socket 21 of corresponding with draw-in groove and mutual clamping,
Some second binding posts corresponding with the first binding post, described second it is provided with on described bayonet socket 21
Binding post electrically connects with hookup respectively.Described breadboard 2 includes the reverse-biased hookup of diode
Plate 2-1 and diode power degradation circuit board 2-2.
As shown in Figure 4, diode described in the utility model reverse-biased breadboard 2-1 is provided with two poles
Manage reverse-biased hookup, the reverse-biased hookup of described diode be arranged on the reverse-biased breadboard of diode one
The second binding post (a21, a22, a23 ... a2n on side diode reverse-biased breadboard bayonet socket 21-1
With b21, b22, b23 ... b2n) electrical connection.The reverse-biased hookup of described diode includes installing with diode
The reverse-biased test resistance (R21, R22, R23 ... R2n) that tested number of diodes on substrate is consistent, described
Reverse-biased test resistance (R21, R22, R23 ... R2n) one end parallel connection after be connected with supply voltage VCC, instead
The second binding post on the other end breadboard bayonet socket 21-1 reverse-biased with diode respectively of test resistance partially
(b21, b22, b23 ... b2n) electrically connect, on diode reverse-biased breadboard bayonet socket 21-1 other not with
Ground connection after the second binding post (a21, a22, a23 ... the a2n) parallel connection that reverse-biased test resistance connects.
As it is shown in figure 5, be provided with on described diode power degradation circuit board 2-2 of the present utility model
Diode power degradation circuit, described diode power degradation circuit be arranged on diode power
The second binding post on degradation circuit board one side diode power degradation circuit board bayonet socket 21-2
(a31, a32, a33 ... a3n and b31, b32, b33 ... b3n) electrically connects.Described diode power is aging
Hookup includes the power aging test electricity consistent with the tested number of diodes on diode mounting substrate
Resistance (R31, R32, R33 ... R3n) and LED light (LED31, LED32, LED33 ... LED3n), described
Power aging test resistance and LED light alternate composition series circuit, one end of series circuit with
Supply voltage is connected, the other end ground connection of series circuit；One power aging test resistance and a LED refer to
Show that lamp forms one group of test circuit (as it is shown in figure 5, R31 and LED31 is one group of test circuit, R32 and LED32
Be one group of test circuit, R33 and LED33 be one group of test circuit ... R3n and LED3n is one group of test circuit),
Often the two ends of group test circuit electrically connect with the second binding post on bayonet socket respectively.
By the analysis to circuit, all pipe positions are regarded as is installed a fixture by this utility model, and will be anti-
Parallel resistance that the series resistance that partially uses, power aging use and LED light is independent is put into individually
A test fixture on, regard anti-bias circuit and power aging circuit respectively as.
When reverse-biased and power aging need to be carried out to be tested, first product is installed on diode mounting substrate, enters
During row reverse-biased test, reverse-biased for diode breadboard is installed on diode mounting substrate, i.e. diode peace
The a21 of the dress a11 of substrate and the reverse-biased breadboard of diode connects, the b11 of diode mounting substrate and
The b21 of the reverse-biased breadboard of diode connects, and by that analogy, so achieves that former reverse-biased test fixture
Function. and when needs carry out power aging test, reverse-biased for diode breadboard is taken off, then by two
Pole tube power degradation circuit board is installed on diode mounting substrate, i.e. the a11 of diode mounting substrate
Connect with the a31 of merit diode power degradation circuit board, the b11 of diode mounting substrate and diode
The b31 of power aging breadboard connects, and by that analogy, thus can realize former power aging fixture
Function.This utilize method of testing of the present utility model to reach design requirement, meet by changing two poles
Manage reverse-biased breadboard and diode power degradation circuit board can realize the reverse-biased of product and power is old
Change test, it is not necessary to carry out the secondary installing of product, it is achieved that the reverse-biased gapless with power aging test of product
Test.
Design of the present utility model is applicable to the screening test of the electronic devices and components such as diode.Use this design side
Case, product to be tested only need to install once, can complete power aging and reverse-biased test, and product
Test also can be carried out on test fixture, improves test speed, decreases product test and secondary installing and tears open
The required turnaround time unloaded, improve work efficiency.Achieve product from test before, after reverse-biased test and
The one_to_one corresponding of the test after power aging test, has all saved cost of labor in terms of Installation And Test.This
Utility model reduces the stress damage that axial product causes due to installation and removal simultaneously, and screening process controls
Become extremely convenient, the risk during greatly reducing.
Compared with prior art, this utility model mainly has the advantage that
The most tested components and parts are without carrying out secondary installing, and the workload of tested components and parts installation and removal subtracts
Half as large, improve work efficiency.
2. for axial product, owing to without secondary installing, decreasing the stress caused by installation and removal and damaging
Wound.
3. achieve product test on fixture, improve test speed, needed for decreasing product test
Turnaround time, next step power aging test after reverse-biased off-test, can be quickly carried out.
4., owing to achieving the reverse-biased gapless test with power aging of product, screening process controls to become extremely
Convenient, especially for the batch that those product quantities are bigger, after product splits into small batch, these small batches
Product can complete reverse-biased and power aging test, the risk during reducing in time.
5. due to without carrying out secondary installing, it is achieved that product from just measuring the one_to_one corresponding of terminal test,
Need the parameter of product is done experiment the easiest when front and back contrasting.
This utility model meaning in terms of benefit:
1. monthly screen 60,000 calculating by measuring and calculating by glass envelope and plastic packaging product, can in terms of Installation And Test
To save the workload of 1.5 people, cost of labor can be saved every year more than 100,000 yuan, the most cost-effective more
Very.
Reverse-biased or aging circuit are often burnt out by the most former test fixture when product failure, cause whole test
Fixture is scrapped, and test will not be installed fixture during product failure after using new method and burn, simply by two
Corresponding anti-bias circuit plate and power aging circuit board damage, thus preferably saved cost.
The above is preferred implementation of the present utility model, for the ordinary skill people of the art
For Yuan, on the premise of without departing from this utility model principle, it is also possible to make some improvements and modifications, this
A little improvements and modifications are also regarded as protection domain of the present utility model.
Claims (5)
1. diode power experiment universal fixture aging, reverse-biased, it is characterized in that: include diode mounting substrate and breadboard, it is provided with some diodes on described diode mounting substrate and pore is installed, one side of diode mounting substrate is provided with draw-in groove, being provided with some first binding posts in described draw-in groove, the first described binding post is installed pore with diode respectively and is electrically connected；Described diode installs pore in order to install tested diode；Some hookups it are provided with on described breadboard, one side of breadboard is provided with the bayonet socket of corresponding with draw-in groove and mutual clamping, being provided with some second binding posts corresponding with the first binding post on described bayonet socket, the second described binding post electrically connects with hookup respectively；Described breadboard includes the reverse-biased breadboard of diode and diode power degradation circuit board.
Diode power the most according to claim 1 experiment universal fixture aging, reverse-biased, it is characterized in that: be provided with the reverse-biased hookup of diode on the reverse-biased breadboard of described diode, the reverse-biased hookup of described diode electrically connects with the second binding post being arranged on the mouth of checkpost, diode reverse-biased breadboard side.
Diode power the most according to claim 2 experiment universal fixture aging, reverse-biased, it is characterized in that: the reverse-biased hookup of described diode includes the reverse-biased test resistance consistent with the tested number of diodes on diode mounting substrate, it is connected with supply voltage after one end parallel connection of described reverse-biased test resistance, the other end of reverse-biased test resistance electrically connects with the second binding post on bayonet socket respectively, ground connection after other second binding post parallel connection not being connected with reverse-biased test resistance on bayonet socket.
Diode power the most according to claim 1 experiment universal fixture aging, reverse-biased, it is characterized in that: be provided with diode power degradation circuit on described diode power degradation circuit board, described diode power degradation circuit electrically connects with the second binding post being arranged on the mouth of checkpost, diode power degradation circuit board side.
Diode power the most according to claim 4 experiment universal fixture aging, reverse-biased, it is characterized in that: described diode power degradation circuit includes the power aging test resistance consistent with the tested number of diodes on diode mounting substrate and LED light, described power aging test resistance and LED light alternate composition series circuit, one end of series circuit is connected with supply voltage, the other end ground connection of series circuit；One power aging test resistance and a LED light form one group of test circuit, and often the two ends of group test circuit electrically connect with the second binding post on bayonet socket respectively.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620383799.1U CN205620437U (en) | 2016-04-29 | 2016-04-29 | Experimental universal fixturing of laoization of diode power, reverse biased |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620383799.1U CN205620437U (en) | 2016-04-29 | 2016-04-29 | Experimental universal fixturing of laoization of diode power, reverse biased |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106556756A (en) * | 2016-10-20 | 2017-04-05 | 北方电子研究院安徽有限公司 | A kind of multidigit aging equipment of SMD electric capacity and resistance |
| CN107316813A (en) * | 2017-06-30 | 2017-11-03 | 江苏能华微电子科技发展有限公司 | A kind of preparation method of gallium nitride diode and the preparation method of gallium nitride triode |
| CN109507562A (en) * | 2018-12-24 | 2019-03-22 | 南昌易美光电科技有限公司 | A kind of circuit board and method for lamp bead senile experiment |
| CN113589132A (en) * | 2021-08-30 | 2021-11-02 | 中国振华集团永光电子有限公司（国营第八七三厂） | High-temperature aging reverse bias test device suitable for transistor and field effect transistor |
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2016
- 2016-04-29 CN CN201620383799.1U patent/CN205620437U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106556756A (en) * | 2016-10-20 | 2017-04-05 | 北方电子研究院安徽有限公司 | A kind of multidigit aging equipment of SMD electric capacity and resistance |
| CN106556756B (en) * | 2016-10-20 | 2019-06-21 | 北方电子研究院安徽有限公司 | A kind of multidigit aging equipment of patch type capacitor and resistance |
| CN107316813A (en) * | 2017-06-30 | 2017-11-03 | 江苏能华微电子科技发展有限公司 | A kind of preparation method of gallium nitride diode and the preparation method of gallium nitride triode |
| CN107316813B (en) * | 2017-06-30 | 2019-12-17 | 江苏能华微电子科技发展有限公司 | A preparation method of gallium nitride diode and a preparation method of gallium nitride triode |
| CN109507562A (en) * | 2018-12-24 | 2019-03-22 | 南昌易美光电科技有限公司 | A kind of circuit board and method for lamp bead senile experiment |
| CN109507562B (en) * | 2018-12-24 | 2024-05-14 | 南昌易美光电科技有限公司 | Circuit board and method for lamp bead aging experiment |
| CN113589132A (en) * | 2021-08-30 | 2021-11-02 | 中国振华集团永光电子有限公司（国营第八七三厂） | High-temperature aging reverse bias test device suitable for transistor and field effect transistor |
| CN113589132B (en) * | 2021-08-30 | 2024-05-14 | 中国振华集团永光电子有限公司（国营第八七三厂） | High-temperature aging reverse bias test device suitable for transistor and field effect transistor |
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| TR01 | Transfer of patent right |
Effective date of registration: 20240508 Address after: No. 13856 Jingshi West Road, Ping'an Street, Changqing District, Jinan City, Shandong Province, 250101 Patentee after: JINAN JINGHENG ELECTRONICS Co.,Ltd. Country or region after: China Address before: 250014 No. 51 Heping Road, Lixia District, Shandong, Ji'nan Patentee before: JINAN SEMICONDUCTOR Research Institute Country or region before: China |
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| TR01 | Transfer of patent right |