CN205249154U - Film bulk acoustic wave syntonizer and wave filter, oscillator, wireless transceiver - Google Patents
Film bulk acoustic wave syntonizer and wave filter, oscillator, wireless transceiver Download PDFInfo
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- CN205249154U CN205249154U CN201521050953.5U CN201521050953U CN205249154U CN 205249154 U CN205249154 U CN 205249154U CN 201521050953 U CN201521050953 U CN 201521050953U CN 205249154 U CN205249154 U CN 205249154U
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- 239000010410 layer Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000002346 layers by function Substances 0.000 claims abstract description 17
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 31
- 229910002113 barium titanate Inorganic materials 0.000 claims description 6
- 229910002353 SrRuO3 Inorganic materials 0.000 claims description 5
- 229910015846 BaxSr1-xTiO3 Inorganic materials 0.000 claims description 4
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 11
- 230000005684 electric field Effects 0.000 description 11
- 230000010287 polarization Effects 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The utility model discloses a film bulk acoustic wave syntonizer, including substrate base plate and the functional layer of preparation on the substrate base plate, the functional layer includes: the at least three -layer electrode that sets up in order along the direction of perpendicular to substrate substrate surface, the piezoelectric membrane layer that sets up between per two electrodes and make by ferroelectric material. The utility model discloses utilize sandwich structure and ferroelectric material's characteristic, realized the tunable frequency and the switching of film bulk acoustic wave syntonizer, still do not need external switch, saved product cost, simplified the product structure. In addition the utility model also discloses a wave filter, oscillator, wireless transceiver, these devices have all used the utility model discloses a film bulk acoustic wave syntonizer.
Description
Technical field
The utility model relates to wireless telecommunications device technical field. Relate in particular to a kind of FBAR and comprise wave filter, oscillator and the radio-frequency module of this FBAR.
Background technology
FBAR (FBAR) is generally the stacked sandwich structure that adopts electrode/piezoelectric membrane/electrode, and the inverse piezoelectric effect of piezoelectric membrane is converted into the high frequency electrical signal of input the acoustical signal of certain frequency. In the time that being just in time the odd-multiple of half-wavelength, the propagation distance of sound wave in piezoelectric membrane will produce resonance, the wherein sound wave loss minimum at resonant frequency place, make the acoustical signal of this frequency can pass through piezoelectric thin film layer, and the signal of other frequencies is blocked, thereby only there is the signal of CF in output output, to realize the filter function of the signal of telecommunication.
Patent ZL201320526762.6 improves the existing the problems referred to above of sandwich structure, but the frequency of the resonator of this patent can be received the restriction of single piezoelectric membrane layer material, and frequency range is very narrow, and does not have frequency mode to switch.
Summary of the invention
The utility model is in order to solve existing problem, a kind of FBAR is provided, comprise underlay substrate and the functional layer of preparation on underlay substrate, described functional layer comprises: along at least triple electrode arranging in turn perpendicular to the direction on underlay substrate surface, be arranged between every two cube electrodes and the piezoelectric thin film layer of being made up of ferroelectric material.
Preferably, the position that is positioned at described functional layer below on described underlay substrate offers cavity, and the transversely surface area of described cavity is less than the area of the bottom electrode that is close to cavity in described functional layer, and is greater than the area of above each layer of described bottom electrode.
In the technical program, each layer of described functional layer can be tabular, can also be in the form of a ring, and the identical and concentric setting of hollow parts area in the form of a ring time in the middle of each layer. Described electrode adopts perovskite structure oxide SrRuO3Or platinum Pt makes, described piezoelectric thin film layer adopts SrTiO3(strontium titanates), BaTiO3(barium titanate), BaxSr1-xTiO3A kind of material in the middle of (barium strontium) is made.
The utility model also provides a kind of wave filter and a kind of oscillator be made up of above-mentioned FBAR, and a kind of wireless transceiver, comprises duplexer or multiplexer.
Electrode of the present utility model has adopted SrRuO3(perovskite structure oxide), piezoelectric thin film layer adopts ferroelectric material SrTiO3(strontium titanates) or BaTiO3(barium titanate) or BaxSr1-xTiO3(barium strontium), the crystal of ferroelectric material by (100) according to silicon chip substrate substrate brilliant (crystal orientation) to epitaxial growth. Therefore compared with prior art, the performance of the dielectric constant of our ferroelectric material and controlling electric energy resonant frequency will improve. Meanwhile, adopt multi-layered electrode and the spaced structure of piezoelectric thin film layer, by changing additional voltage swing and direction, realize ON/OFF, FREQUENCY CONTROL and the frequency handoff functionality of FBAR.
Brief description of the drawings
Fig. 1 is top view of the present utility model;
Fig. 2 is the cutaway view of the utility model the first embodiment;
Fig. 3 is the cutaway view of the utility model the second embodiment;
Fig. 4 is the cutaway view of the utility model the 3rd embodiment;
Fig. 5 is the cutaway view of the utility model the 4th embodiment;
Fig. 6 is the resonant frequency schematic diagrames of two piezoelectric layer device voltage directions of the utility model when identical;
Resonant frequency schematic diagram when Fig. 7 is two piezoelectric layer device voltage opposite directions of the utility model;
Fig. 8 is resonant frequency oscillogram of the present utility model.
Detailed description of the invention
Below in conjunction with accompanying drawing, the utility model is further described.
Fig. 1 is top view of the present utility model, Fig. 2 and Fig. 3 have provided the embodiment of two concrete FBARs, underlay substrate 1 and the functional layer of preparation on underlay substrate have been shown in Fig. 1, in Fig. 2, two specific embodiments of Fig. 3, functional layer comprises bottom electrode 201, first piezoelectric thin film layer 301, middle level electrode 202, second piezoelectric thin film layer 302 and the upper electrode 203 of stacked above one another on underlay substrate 1 from bottom to up, adopt altogether triple electrode, first, second piezoelectric thin film layer adopts ferroelectric material, has ferroelectric effect. By the electrostriction effect of said structure and ferroelectric material, can apply respectively the identical or different voltage of direction to first, second piezoelectric thin film layer, the size of additional DC voltage be can also change, thereby switch resonator, the control variation of resonant frequency and the object of switching frequency pattern reached.
Piezoelectric thin film layer of the prior art all adopts piezoelectric conventionally, such as aluminium nitride and zinc oxide, utilizes the piezo-electric effect of knowing to realize bulk acoustic wave resonator. Electricity and power relation can be expressed by simple mathematical formulae: S=QP2, wherein S is stress, P is that Q is electrostriction effect coefficient due to the electric polarization that electrostriction effect produces (supposing that pressure is zero). The formula of the electricity strengthening P guiding from suffered electric field is: P=Ps+ χ E, wherein PsBe self power generation polarization coefficient, χ E is the electric polarization of being induced by extra electric field. That total stress S can be divided into 3 parts: spontaneous strain power, linear piezoelectric adaptability to changes, secondary electricity cause stretching strain power, and formula is: S=QPs 2+2QPsχE+Qχ2E2, wherein S represents stress, Q represents electrostriction property coefficient, PsRepresent spontaneous polarization coefficient, χ represents electric susceptibility, and E represents electric-field intensity.
As shown in Figure 6 to 8, the utility model is under para-electric state, and ferroelectric material does not have self power generation polarization and piezoelectric response, so total stress S only has secondary electricity to cause stretching strain power S=Q χ2E2. Because electric field relies on polarization, electrostriction effect depends on applied electric field, thereby allows the utility model can control/electric coupling, produces required sound wave by inverse piezoelectric effect. The relation of stress and electric-field intensity is unlike the linear relationship in common piezoelectric piezo-electric effect, but there is quadratic relationship, so the impact at the electric-field intensity counter stress of the electrostriction effect of ferroelectric material is larger, particularly under higher electric-field intensity, along with the change of electric-field intensity, stress also can change with larger amplitude. Visible, the electrostriction of ferroelectric material has given conventional films bulk acoustic wave resonator brand-new function, makes it can be by applying direct current pressure-controlled. By changing the size of impressed DC voltage, carry out the variation of proof stress, and then can control sound wave propagation velocity, and resonant frequency is directly proportional to SVEL, thus the variation of control resonant frequency.
Therefore, the principle of the utility model ON/OFF FBAR is, in the time that extra electric field is zero, the stress of first, second piezoelectric thin film layer is also zero, just can not produce sound wave and then can not produce resonance, therefore can play the opening and closing of carrying out to FBAR by whether applying DC voltage yet, completely without any need for additional switch, there is not any insertion loss that comes from switch and bias network, greatly reduce volume and the manufacturing cost of device yet.
The principle of controlling the resonant frequency of FBAR is, because first, second piezoelectric thin film layer is ferroelectric material. Utilize the electrostriction effect of first, second piezoelectric thin film layer, by changing the size of additional DC voltage, control the variation of ferroelectric material stress, and then control sound wave propagation velocity, and resonant frequency is directly proportional to SVEL, thus the variation of control resonant frequency.
The principle that the frequency of FBAR is switched is, in each piezoelectric thin film layer, the direction of the piezoelectric modulus (e33) of electric field induction is to be controlled by the direction of voltage induced polarization. If voltage direction is identical in two piezoelectric thin film layers, the utility model is using as a single FBAR, the resonant frequency of its first sound wave is by relevant to the gross thickness of two-layer piezoelectric layer device architecture, and bottom electrode 201 is to top layer electrode 203 these total thickness of five layers. If but voltage direction is contrary in two piezoelectric thin film layers, the first sound wave of that FBAR is by suppressed, the resonant frequency of the second sound wave is by relevant to the thickness of individual layer piezoelectric layer device architecture, the individual layer piezoelectric layer device being formed by bottom electrode 201, the first piezoelectric thin film layer 301 and middle level electrode 202, or the individual layer piezoelectric device being formed by middle level electrode 202, the second piezoelectric thin film layer 302 and top layer electrode 203. And in two embodiment that the utility model exemplifies, the frequency mode of FBAR switches two kinds, the first pattern is if voltage direction is identical in first, second piezoelectric thin film layer, and its resonant frequency will occur in 1.37GHz. The second pattern is that its resonant frequency will occur in 2.96GHz if voltage direction is contrary in first, second piezoelectric thin film layer. Therefore change the direction of the impressed DC voltage of two piezoelectric thin film layers, just can realize and will switch the frequency mode of FBAR.
Because each layer of functional layer is all to adopt film pulsed laser deposition or magnetron sputtered deposition technology to prepare the first electrode, the second electrode and piezoelectric material layer, and the thickness homogeneity of thin film deposition system is at 5%-10%. So the thickness of the resonator of producing on same wafer exists larger difference to a certain extent, therefore the resonant frequency of resonator will be different. Cavity is offered in the position that we can be positioned at below functional layer on underlay substrate, and the transversely surface area of cavity is less than the area of bottom electrode, and is greater than the area of the first piezoelectric thin film layer, middle level electrode, the second piezoelectric thin film layer and upper electrode. The enlarged leather area of bottom electrode some, not only can be convenient be fixed with underlay substrate, but also can avoid the multilayer accumulation horizon stack structure of its top to have problems in growth course and substrate etching process. Concrete, in the embodiment of Fig. 2, cavity has been made the hole 101 of offering along the direction of vertical substrates substrate surface, its upper end open is less than lower ending opening, but the horizontal area of upper end open is less than the area of bottom electrode 201, be greater than the area of the first piezoelectric thin film layer 301, the second piezoelectric thin film layer 302, middle level electrode 202 and top layer electrode 203. In the embodiment of Fig. 3, cavity is made to groove 102, the opening of this groove next-door neighbour bottom electrode 201, the opening of groove is equally also the area that is less than bottom electrode 201, is greater than more than 201 area of each layer of bottom electrode.
Except the above-mentioned method of offering cavity, we can also be as prior art, on different resonators, deposit again one deck quality layers 103, regulate the thickness of resonator and then realize the fine setting to resonant frequency by the quality layers of different-thickness, or as shown in Figure 4, Figure 5, on basis of the present utility model, between bottom electrode 201 and underlay substrate 1, increase one deck quality layers 103.
Bottom electrode 201 of the present utility model, the first piezoelectric thin film layer 301, middle level electrode 202, the second piezoelectric thin film layer 302, upper electrode 203 can be made tabular, also can do circlewise, can make plectane, square plate, erose plate, can also make annulus, put shaped as frame, erose ring. In the time doing circlewise for each layer, the hollow parts in the middle of each layer can be circle, polygon or other are irregularly shaped, but the area of hollow parts is identical, and consistency from top to bottom, is concentric setting.
In the present embodiment, the each layer of material adopting can be as shown in the table:
| Device position | Material |
| Upper strata/bottom electrode | SrRuO3;Pt |
| Middle level electrode | SrRuO3;Pt |
| First, second piezoelectric thin film layer | SrTiO3;BaTiO3;BaxSr1-xTiO3 |
| Underlay substrate | Si |
FBAR of the present utility model is except adopting above-mentioned triple electrode structure, can also arrange three layers with top electrode, and piezoelectric thin film layer is set between them, can further increase like this frequency adjustable extent of FBAR and have more multi-frequency to select to switch. In addition, except protective film bulk acoustic wave resonator, also protection has adopted this FBAR to make simultaneously wave filter, oscillator and wireless transceiver, wireless transceiver can be that duplexer can be also multiplexer. Its median filter is realized the functions such as image cancellation, parasitic filtering and channel selection in wireless transceiver device. For example conventional ladder-type filter, can replace with FBAR of the present utility model by five resonators in the middle of ladder-type filter, and duplexer can adopt two ladder-type filters to form. The wave filter that adopts this FBAR (FBAR) to make has higher quality factor and easily realizes microminiaturized feature. In order to improve frequency selectivity, need the combination of the FBAR device of the resonators that have different resonant frequencies more.
Above specific embodiment is only in order to illustrate design of the present utility model, and those of ordinary skill in the art can make various deformation and variation under design of the present utility model, and these distortion and variation include within protection domain of the present utility model.
Claims (10)
1. a FBAR, comprise underlay substrate and the functional layer of preparation on underlay substrate, it is characterized in that, described functional layer comprises: along at least triple electrode that arranges in turn perpendicular to the direction on underlay substrate surface, be arranged between every two cube electrodes and the piezoelectric thin film layer of being made up of ferroelectric material.
2. FBAR as claimed in claim 1, it is characterized in that, the position that is positioned at described functional layer below on described underlay substrate offers cavity, the transversely surface area of described cavity is less than the area of the bottom electrode that is close to cavity in described functional layer, and is greater than the area of above each layer of described bottom electrode.
3. FBAR as claimed in claim 2, is characterized in that, described cavity is groove or the hole being opened on underlay substrate.
4. FBAR as claimed in claim 1, is characterized in that, each layer of described functional layer is tabular.
5. FBAR as claimed in claim 1, is characterized in that, each layer of described functional layer in the form of a ring, the identical and concentric setting of hollow parts area in the middle of each layer.
6. the FBAR as described in claim 1 to 5 any one, is characterized in that, described electrode adopts SrRuO3Or Pt makes, described piezoelectric thin film layer adopts SrTiO3、BaTiO3、BaxSr1-xTiO3Central a kind of material is made.
7. FBAR as claimed in claim 1, is characterized in that, is also depositing one deck quality layers between described underlay substrate and bottom electrode.
8. the wireless transceiver that the FBAR described in employing the claims 1-7 any one claim is made, described wireless transceiver comprises duplexer, multiplexer.
9. the wave filter that the FBAR described in employing the claims 1-7 any one claim is made.
10. the oscillator that the FBAR described in employing the claims 1-7 any one claim is made.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521050953.5U CN205249154U (en) | 2015-12-16 | 2015-12-16 | Film bulk acoustic wave syntonizer and wave filter, oscillator, wireless transceiver |
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| CN201521050953.5U CN205249154U (en) | 2015-12-16 | 2015-12-16 | Film bulk acoustic wave syntonizer and wave filter, oscillator, wireless transceiver |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108270414A (en) * | 2017-01-03 | 2018-07-10 | 稳懋半导体股份有限公司 | Method for manufacturing bulk acoustic wave resonator having mass adjustment structure |
| CN108390662A (en) * | 2017-02-03 | 2018-08-10 | 三星电机株式会社 | Filter and front-end module including filter |
| TWI632772B (en) * | 2016-10-17 | 2018-08-11 | 穩懋半導體股份有限公司 | A bulk acoustic wave resonator with a mass adjustment structure and its application to bulk acoustic wave filter |
| CN108964629A (en) * | 2018-07-04 | 2018-12-07 | 武汉大学 | A kind of tunable thin film bulk acoustic wave resonator |
| CN109945966A (en) * | 2019-03-29 | 2019-06-28 | 中北大学 | Single-electrode hydrophone with AlN double-layer film |
| CN110995199A (en) * | 2019-12-17 | 2020-04-10 | 武汉大学 | Diplexer |
| CN111490742A (en) * | 2020-05-06 | 2020-08-04 | 贵州省高新光电材料及器件研究院有限公司 | Resonator structure and manufacturing method thereof |
| CN112087216A (en) * | 2020-08-03 | 2020-12-15 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonators and components, filters and electronic equipment with acoustic holes |
| CN112272015A (en) * | 2020-11-09 | 2021-01-26 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave resonator |
| CN112543010A (en) * | 2020-12-24 | 2021-03-23 | 华南理工大学 | Frequency-adjustable film bulk acoustic resonator and preparation method thereof |
| WO2021077714A1 (en) * | 2019-10-26 | 2021-04-29 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator and frequency adjustment method thereof, filter and electronic device |
| CN114389556A (en) * | 2020-10-22 | 2022-04-22 | 台湾奈米碳素股份有限公司 | Method for manufacturing film bulk acoustic wave resonance device with specific resonance frequency |
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2015
- 2015-12-16 CN CN201521050953.5U patent/CN205249154U/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI632772B (en) * | 2016-10-17 | 2018-08-11 | 穩懋半導體股份有限公司 | A bulk acoustic wave resonator with a mass adjustment structure and its application to bulk acoustic wave filter |
| CN108270414B (en) * | 2017-01-03 | 2021-06-22 | 稳懋半导体股份有限公司 | Manufacturing method of bulk acoustic wave resonator with mass adjustment structure |
| CN108270414A (en) * | 2017-01-03 | 2018-07-10 | 稳懋半导体股份有限公司 | Method for manufacturing bulk acoustic wave resonator having mass adjustment structure |
| CN108390662A (en) * | 2017-02-03 | 2018-08-10 | 三星电机株式会社 | Filter and front-end module including filter |
| CN108390662B (en) * | 2017-02-03 | 2021-08-31 | 三星电机株式会社 | Filter and front-end module comprising same |
| CN108964629A (en) * | 2018-07-04 | 2018-12-07 | 武汉大学 | A kind of tunable thin film bulk acoustic wave resonator |
| CN109945966A (en) * | 2019-03-29 | 2019-06-28 | 中北大学 | Single-electrode hydrophone with AlN double-layer film |
| WO2021077714A1 (en) * | 2019-10-26 | 2021-04-29 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator and frequency adjustment method thereof, filter and electronic device |
| CN110995199A (en) * | 2019-12-17 | 2020-04-10 | 武汉大学 | Diplexer |
| CN111490742A (en) * | 2020-05-06 | 2020-08-04 | 贵州省高新光电材料及器件研究院有限公司 | Resonator structure and manufacturing method thereof |
| CN112087216A (en) * | 2020-08-03 | 2020-12-15 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonators and components, filters and electronic equipment with acoustic holes |
| CN112087216B (en) * | 2020-08-03 | 2022-02-22 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with acoustic hole, assembly, filter and electronic device |
| CN114389556A (en) * | 2020-10-22 | 2022-04-22 | 台湾奈米碳素股份有限公司 | Method for manufacturing film bulk acoustic wave resonance device with specific resonance frequency |
| CN112272015A (en) * | 2020-11-09 | 2021-01-26 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave resonator |
| CN112272015B (en) * | 2020-11-09 | 2021-11-02 | 中国科学院上海微系统与信息技术研究所 | an acoustic resonator |
| CN112543010A (en) * | 2020-12-24 | 2021-03-23 | 华南理工大学 | Frequency-adjustable film bulk acoustic resonator and preparation method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160518 Termination date: 20181216 |