CN205248317U - Magnetosensitive sensor with extend electrode - Google Patents
Magnetosensitive sensor with extend electrode Download PDFInfo
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- CN205248317U CN205248317U CN201521137548.7U CN201521137548U CN205248317U CN 205248317 U CN205248317 U CN 205248317U CN 201521137548 U CN201521137548 U CN 201521137548U CN 205248317 U CN205248317 U CN 205248317U
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- insb
- magnetosensitive device
- extension electrode
- electrode
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Abstract
(B, ) the utility model discloses a magnetosensitive sensor with extend electrode (b) (b), (b) (b) be through extending to the upper surface of basement with the electrode from (b) (b) inSb (b) (b) film, then carry out the routing on partly at that of basement upper surface of lieing in of electrode during the routing to avoid routing above the inSb film and damaged the inSb film, guaranteed magnetosensitive sensor's quality. (B, )
Description
Technical field
The utility model relates to a kind of magnetosensitive device with extension electrode.
Background technology
Magnetosensitive device of the prior art, comprises the substrate layer, indium stibide film, the electrode that from bottom to top set gradually, and wire is connected on electrode by routing technique. And because indium antimonide material softer is crisp, in the time that electrode is carried out to routing, the indium stibide film that can make to be positioned under electrode damages.
Utility model content
For overcoming above-mentioned shortcoming, the purpose of this utility model is to provide a kind of magnetosensitive device with extension electrode.
In order to reach above object, the technical solution adopted in the utility model is: a kind of magnetosensitive device with extension electrode, it comprises the InSb film of substrate, the required chip design of formation on substrate, the magnetosensitive device with extension electrode also comprises at least two electrodes, a part for each electrode is positioned at InSb film upper surface, and another part extends to upper surface of substrate.
Further, described another part of electrode is connected with wire by routing technique.
Further, electrode material adopts gold or aluminium.
Further, base material is pottery, silicon, ferrite or mica.
Further, substrate comprises the substrate layer, transition zone, the insulating barrier that set gradually from the bottom to top, buffer layer material is compound, this compound contains at least one metallic element of the same clan with In including In, in described compound, at least contain Sb, in compound, except Sb, only contain the metallic element in the family of In place.
Further, insulating layer material is In
2
O
3
Or SiO
2
。
Further, if in the magnetosensitive device manufacturing process with extension electrode, annealing temperature when InSb is carried out to annealing in process is lower than the fusing point of InSb, buffer layer material is InSb, if in the magnetosensitive device manufacturing process with extension electrode, annealing temperature when InSb is carried out to annealing in process is higher than the fusing point of InSb, and buffer layer material is other compounds except InSb.
Further, substrate layer material is pottery, silicon, ferrite or mica.
The manufacturing process of above-mentioned a kind of magnetosensitive device with extension electrode, comprises the following steps:
A. at upper surface of substrate growth InSb thin layer, and form InSb film according to chip design by semiconductor lithography process;
B. by semiconductor lithography masking process, evaporation electrode makes a part for electrode be positioned at InSb film upper surface, and another part extends to upper surface of substrate.
Further, connect a wire on described another part that is positioned at upper surface of substrate of InSb film by routing technique.
Owing to having adopted technique scheme, a kind of magnetosensitive device with extension electrode of the utility model, by electrode is extended to the upper surface of substrate from InSb film, when routing, in that part that is positioned at upper surface of substrate of electrode, carry out routing, thereby avoid routing above InSb film and damaged InSb film, ensured the quality of magnetosensitive device.
Brief description of the drawings
Accompanying drawing 1 is that the side of existing magnetosensitive device in the utility model background technology is cutd open structural representation;
Accompanying drawing 2 is the plan structure schematic diagram of a kind of magnetosensitive device with extension electrode in the utility model embodiment mono-;
Accompanying drawing 3 is that the side of a kind of magnetosensitive device with extension electrode in the utility model embodiment mono-is cutd open structural representation;
Accompanying drawing 4 is that the side of a kind of magnetosensitive device with extension electrode in the utility model embodiment bis-is cutd open structural representation.
Number in the figure is:
1, substrate; 11, substrate layer; 12, transition zone; 13, insulating barrier;
2, InSb film;
3, electrode;
4, wire.
Detailed description of the invention
Advantage of the present utility model and feature below in conjunction with accompanying drawing, preferred embodiment of the present utility model be described in detail, so that can be easier to be understood by those skilled in the art.
Embodiment mono-
With reference to accompanying drawing 2 and accompanying drawing 3, a kind of magnetosensitive device with extension electrode in the present embodiment, it comprises the InSb film 2 of substrate 1, the required chip design of formation on substrate 1. The magnetosensitive device with extension electrode also comprises at least two electrodes 3, and a part for each electrode 3 is positioned at InSb film 2 upper surfaces, and another part extends to substrate 1 upper surface.
Described another part of electrode 3 is connected with wire 4 by routing technique.
Accompanying drawing 2 shows the embodiment of a kind of InSb film shape and electrode 3 setting positions.
Electrode 3 materials adopt gold or aluminium.
Substrate 1 material is pottery, silicon, ferrite or mica.
The manufacturing process of the above-mentioned magnetosensitive device with extension electrode, comprises the following steps:
A. at substrate 1 upper surface growth InSb thin layer, and form InSb film 2 according to chip design by semiconductor lithography process;
B. by semiconductor lithography masking process, evaporation electrode 3 makes a part for electrode 3 be positioned at InSb film 2 upper surfaces, and another part extends to substrate 1 upper surface.
By routing technique, wire 4 is connected on another part that is positioned at substrate 1 upper surface of InSb film 2.
A kind of magnetosensitive device with extension electrode in the present embodiment, by electrode is extended to the upper surface of substrate from InSb film, when routing, in that part that is positioned at upper surface of substrate of electrode, carry out routing, thereby avoid routing above InSb film and damaged InSb film, ensured the quality of magnetosensitive device.
Embodiment bis-
With reference to accompanying drawing 4, a kind of in the present embodiment has the magnetosensitive device of extension electrode and the difference of embodiment mono-is only: the substrate 1 in the present embodiment comprises the substrate layer 11, transition zone 12, the insulating barrier 13 that set gradually from the bottom to top. Substrate layer 11 thickness are 100 μ m～1000 μ m, and material is pottery, silicon, ferrite or mica. Insulating barrier 13 thickness are 0.01 μ m～10 μ m, and material is In
2
O
3
Or SiO
2
. Transition zone 12 materials are compound, and this compound contains at least one metallic element of the same clan with In including In, at least contains Sb in described compound, only contains the metallic element in the family of In place in compound except Sb. If in the magnetosensitive device manufacturing process with extension electrode, annealing temperature when InSb is carried out to annealing in process is lower than the fusing point of InSb, transition zone 12 materials are InSb, if in the magnetosensitive device manufacturing process with extension electrode, annealing temperature when InSb is carried out to annealing in process is higher than the fusing point of InSb, transition zone 12 materials are other compounds except InSb, as binary material AlSb, GaSb, ternary material InGaSb, InAlSb, quaternary material InGaAlSb etc., will not enumerate here. Transition zone 2 thickness are 0.1 μ m～20 μ m.
The difference having in the present embodiment in manufacturing process and the embodiment mono-of magnetosensitive device of extension electrode is only: the manufacture of substrate 1: 1, get substrate layer 1, under vacuum condition, make monomer to substrate layer 1 upper surface of contained metallic element in compound form described compound by vapour phase epitaxy method respectively, thereby form transition zone 2; 2, first under vacuum condition, make In monomer to transition zone 2 upper surfaces form cover layers by vapour phase epitaxy method, then pass into oxygen or air makes cover layer be oxidized at least partly In
2
O
3
And formation insulating barrier 3; In another embodiment, in this step, first under vacuum condition, make Si monomer to transition zone 2 upper surfaces form cover layers by vapour phase epitaxy method, then pass into oxygen or air makes cover layer be oxidized at least partly SiO
2
And formation insulating barrier 3. In the more preferred embodiment of one, in step 2, pass into oxygen or air and make cover layer all be oxidized to In
2
O
3
Or SiO
2
And formation insulating barrier 3. Above-mentioned vapour phase epitaxy method is thermal evaporation, Metalorganic Chemical Vapor Deposition or molecular beam epitaxy.
Complete after the manufacture of substrate 1, then according to the steps A in embodiment mono-to B, manufacture the magnetosensitive device with extension electrode in the present embodiment.
A kind of magnetosensitive device with extension electrode in the present embodiment, except having described in embodiment mono-advantage, also has the following advantages: 1,, by transition zone, shielded doping effect, ensured the electrical properties of InSb film; 2, transition zone is selected and InSb film same type of material, and the two thermal expansion coefficient difference is very little, has reduced because of the different impacts on InSb film of thermal coefficient of expansion; 3,, in the time of substrate layer material Ceramics, due to transition zone setting, avoided the impact of ceramic upper hole on InSb film; 4 and transition zone and InSb film are conductive layer, between the two, increase insulating barrier and played the effect of insulation.
Above embodiment is only explanation technical conceive of the present utility model and feature; its object is to allow person skilled in the art understand content of the present utility model and implemented; can not limit protection domain of the present utility model with this; all equivalences of doing according to the utility model Spirit Essence change or modify, and all should be encompassed in protection domain of the present utility model.
Claims (8)
1. one kind has the magnetosensitive device of extension electrode, it comprises the InSb film (2) of substrate (1), the required chip design of formation on described substrate (1), it is characterized in that: the described magnetosensitive device with extension electrode also comprises at least two electrodes (3), a part for each described electrode (3) is positioned at described InSb film (2) upper surface, and another part extends to described substrate (1) upper surface.
2. a kind of magnetosensitive device with extension electrode according to claim 1, is characterized in that: described another part of described electrode (3) is connected with wire (4) by routing technique.
3. a kind of magnetosensitive device with extension electrode according to claim 1, is characterized in that: described electrode (3) material adopts gold or aluminium.
4. according to a kind of magnetosensitive device with extension electrode described in claim 1, it is characterized in that: described substrate (1) material is pottery, silicon, ferrite or mica.
5. a kind of magnetosensitive device with extension electrode according to claim 1, it is characterized in that: described substrate (1) comprises the substrate layer (11), transition zone (12), the insulating barrier (13) that set gradually from the bottom to top, described transition zone (12) material is compound, this compound contains at least one metallic element of the same clan with In including In, in described compound, at least contain Sb, in compound, except Sb, only contain the metallic element in the family of In place.
6. a kind of magnetosensitive device with extension electrode according to claim 5, is characterized in that: described insulating barrier (13) material is In2O3Or SiO2。
7. a kind of magnetosensitive device with extension electrode according to claim 5, it is characterized in that: if in the described magnetosensitive device manufacturing process with extension electrode, annealing temperature when described InSb is carried out to annealing in process is lower than the fusing point of InSb, described transition zone (12) material is InSb, if in the described magnetosensitive device manufacturing process with extension electrode, annealing temperature when described InSb is carried out to annealing in process is higher than the fusing point of InSb, and described transition zone (12) material is compound described in other except InSb.
8. according to a kind of magnetosensitive device with extension electrode described in claim 5, it is characterized in that: described substrate layer (11) material is pottery, silicon, ferrite or mica.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521137548.7U CN205248317U (en) | 2015-12-31 | 2015-12-31 | Magnetosensitive sensor with extend electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521137548.7U CN205248317U (en) | 2015-12-31 | 2015-12-31 | Magnetosensitive sensor with extend electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205248317U true CN205248317U (en) | 2016-05-18 |
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ID=55947394
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521137548.7U Active CN205248317U (en) | 2015-12-31 | 2015-12-31 | Magnetosensitive sensor with extend electrode |
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|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470382A (en) * | 2015-12-31 | 2016-04-06 | 江苏森尼克电子科技有限公司 | Magnetic-sensitive device with extending electrode and manufacturing process |
-
2015
- 2015-12-31 CN CN201521137548.7U patent/CN205248317U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470382A (en) * | 2015-12-31 | 2016-04-06 | 江苏森尼克电子科技有限公司 | Magnetic-sensitive device with extending electrode and manufacturing process |
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