CN205140971U - Power module - Google Patents

Abstract

The utility model discloses a power module, which comprises a positive electrode, a negative electrode, an output electrode, an upper bridge arm set, a lower bridge arm set and a transition copper layer, the lower bridge arm set includes a lower bridge arm chip copper layer, a lower bridge arm set The arm wiring copper layer and the lower bridge arm chip unit installed on the lower bridge arm chip copper layer, the lower bridge arm wiring copper layer is located between the lower bridge arm chip copper layer and the transition copper layer, and the lower bridge arm chip unit passes The bonding wire is connected to the lower bridge arm wiring copper layer. The utility model changes the current path by changing the distribution structure of the copper layer. The lower bridge arm chip copper layer, the lower bridge arm wiring copper layer, and the transition copper layer are adjacently arranged to cooperate with each other, which reduces the continuous flow of the working current and the freewheeling current. The loop area reduces the stray inductance and switching loss and the complexity of the circuit, improves the reliability of the module, and can be applied in the field of high-speed power modules.

Description

a power module

technical field

The utility model relates to the field of power electronics, in particular to a power module.

Background technique

The power module is a power switch module packaged by power electronic devices such as MOS tube (metal oxide semiconductor), IGBT (insulated gate field effect transistor), and FRD (fast recovery diode) according to certain functions. Power conversion in various occasions such as automobiles, photovoltaic power generation, wind power generation, and industrial frequency conversion.

However, as the power switch in the module is repeatedly switched, the inductance generated by its structural configuration can reduce the reliability of the power module. Due to the large area of the freewheeling circuit of ordinary power modules, the inductance of the freewheeling circuit of the module is very large, resulting in large switching losses and low reliability of the module under high current conditions.

Utility model content

Purpose of the utility model: To solve the above problems, the utility model aims to provide a power module with low stray inductance, low switching loss and high reliability.

Technical solution: a power module, including a positive electrode, a negative electrode, an output electrode, a set of upper bridge arms, a set of lower bridge arms, and a transition copper layer. The set of lower bridge arms includes a lower bridge arm chip copper layer, a lower bridge arm wiring The copper layer and the lower bridge arm chip unit installed on the lower bridge arm chip copper layer, the lower bridge arm wiring copper layer is located between the lower bridge arm chip copper layer and the transition copper layer, and the lower bridge arm chip unit is bonded The line is connected to the lower bridge arm wiring copper layer; the working current flowing from the positive electrode flows into the upper bridge arm assembly through the transition copper layer and finally flows to the output electrode; the freewheeling current flowing from the negative electrode flows into the lower bridge arm wiring copper layer, and then passes through The bonding wire flows into the lower chip unit on the copper layer of the lower chip, and finally flows to the output electrode.

Further, the set of the upper bridge arm includes an upper bridge arm chip copper layer, an upper bridge arm wiring copper layer, and an upper bridge arm chip unit mounted on the upper bridge arm chip copper layer.

Further, the upper bridge arm chip unit includes an integrated upper bridge arm power switch and an upper bridge arm internal diode, and the upper bridge arm power switch and the upper bridge arm internal diode are connected in parallel; the lower bridge arm chip unit includes an integrated The lower bridge arm power switch and the lower bridge arm internal diode, and the lower bridge arm power switch and the lower bridge arm internal diode are connected in parallel; the freewheeling current flowing from the negative electrode flows into the lower bridge arm wiring copper layer, and then flows into the lower bridge arm through the bonding wire. The anode of the internal diode of the lower bridge arm on the copper layer of the bridge arm chip, the negative electrode of the internal diode of the lower bridge arm, and finally flow to the output electrode.

Further, the upper bridge arm chip unit includes an upper bridge arm power switch and an upper bridge arm external diode connected in parallel thereto, and the lower bridge arm chip unit includes a lower bridge arm power switch and a lower bridge arm external diode connected in parallel thereto; The freewheeling current flowing out of the negative electrode flows into the lower bridge arm wiring copper layer, and then flows into the positive pole of the lower bridge arm external diode on the lower bridge arm chip copper layer, the negative pole of the lower bridge arm external diode through the bonding wire, and finally flows to the output electrode .

Further, the upper bridge arm chip unit includes a parallel upper bridge arm power switch, an upper bridge arm internal diode and an upper bridge arm external diode, and the upper bridge arm power switch and the upper bridge arm internal diode are integrated; the lower bridge arm The chip unit includes a parallel connection of the lower bridge arm power switch, the lower bridge arm internal diode and the lower bridge arm external diode, and the lower bridge arm power switch and the lower bridge arm internal diode are integrated; the freewheeling current flowing from the negative electrode flows into the lower bridge arm Arm wiring copper layer, and then flow into the positive pole of the lower bridge arm external diode and the positive pole of the lower bridge arm internal diode, the negative pole of the lower bridge arm external diode and the negative pole of the lower bridge arm internal diode on the copper layer of the lower bridge arm chip through the bonding wire , and finally flow to the output electrode.

Further, the chip unit of the upper bridge arm includes a power switch of the upper bridge arm; the power switch of the upper bridge arm and the power switch of the lower bridge arm are both MOS transistors; the working current flowing out from the positive electrode flows into the upper bridge arm through the transition copper layer The drain of the upper bridge arm power switch on the chip copper layer, the source electrode of the upper bridge arm power switch, and then through the upper bridge arm wiring copper layer, finally flow to the output electrode.

Further, the upper bridge arm chip unit includes an upper bridge arm power switch; the upper bridge arm power switch and the lower bridge arm power switch are both IGBTs; the working current flowing from the positive electrode flows into the upper bridge arm chip through the transition copper layer The collector of the power switch of the upper bridge arm on the copper layer, the emitter of the power switch of the upper bridge arm, and then connect the copper layer of the upper bridge arm, and finally flow to the output electrode.

Further, the chip unit of the upper bridge arm includes a power switch of the upper bridge arm; the power switch of the upper bridge arm is a MOS transistor, and the power switch of the lower bridge arm is an IGBT; the operating current flowing from the positive electrode flows into the upper bridge arm through the transition copper layer The drain of the power switch of the upper bridge arm on the copper layer of the arm chip, the source of the power switch of the upper bridge arm, and then through the wiring copper layer of the upper bridge arm, finally flow to the output electrode.

Further, the chip unit of the upper bridge arm includes a power switch of the upper bridge arm; the power switch of the upper bridge arm is an IGBT, and the power switch of the lower bridge arm is a MOS tube; the working current flowing from the positive electrode flows into the upper bridge arm through the transition copper layer The collector of the power switch of the upper bridge arm on the copper layer of the arm chip, the emitter of the power switch of the upper bridge arm, and then through the wiring copper layer of the upper bridge arm, finally flow to the output electrode.

Beneficial effects: the utility model changes the current path by changing the distribution structure of the copper layer, and the adjacently arranged lower bridge arm chip copper layer, lower bridge arm wiring copper layer, and transition copper layer cooperate with each other, so that the working current flowing out from the positive electrode Flow into the upper bridge arm assembly through the transition copper layer and finally flow to the output electrode; the freewheeling current flowing from the negative electrode flows into the lower bridge arm wiring copper layer, and then flows into the lower bridge arm chip unit on the lower bridge arm chip copper layer through the bonding wire , and finally flow to the output electrode. The freewheeling circuit area of the working current and the freewheeling current is reduced, the stray inductance and switching loss and the complexity of the circuit are reduced, the reliability of the module is improved, and it can be applied in the field of high-speed power modules.

Description of drawings

Fig. 1 is the electric current schematic diagram of the present utility model;

Fig. 2 (a) 2 (b) is the circuit schematic diagram of the present utility model;

Fig. 3 is a structural schematic diagram of the utility model.

detailed description

As shown in FIG. 1 , a power module includes a positive electrode 1 , a negative electrode 2 , an output electrode 3 , a set of upper and lower bridge arms, and a transition copper layer 6 .

The set of the lower bridge arm includes the lower bridge arm chip copper layer 4, the lower bridge arm wiring copper layer 5 and the lower bridge arm chip unit 7 installed on the lower bridge arm chip copper layer 4, and the lower bridge arm wiring copper layer 5 is located at Between the lower bridge arm chip copper layer 4 and the transition copper layer 6, the lower bridge arm chip unit 7 is connected to the lower bridge arm wiring copper layer 5 through a bonding bonding line;

The set of the upper bridge arm includes the upper bridge arm chip copper layer 9 , the upper bridge arm wiring copper layer 10 and the upper bridge arm chip unit 8 mounted on the upper bridge arm chip copper layer 9 . The upper bridge arm chip unit 8 includes an upper bridge arm power switch;

Another structure of the power switch of the upper bridge arm and the power switch of the lower bridge arm is: the power switch of the upper bridge arm and the power switch of the lower bridge arm are both MOS tubes, and the circuit schematic diagram is shown in Figure 2(a). From the positive electrode 1 The outgoing operating current 11 flows into the drain of the upper arm power switch on the upper arm chip copper layer 9 and the source electrode of the upper arm power switch through the transition copper layer 6, then passes through the upper arm wiring copper layer 10, and finally flows to output electrode 3.

Both the power switch of the upper bridge arm and the power switch of the lower bridge arm are IGBTs. The schematic diagram of the circuit is shown in Figure 2(b). The operating current 11 flowing from the positive electrode 1 flows into the copper layer 9 of the upper bridge arm chip through the transition copper layer 6. The collector of the upper bridge arm power switch, the emitter of the upper bridge arm power switch, and then through the upper bridge arm wiring copper layer 10, finally flow to the output electrode 3.

The structure of the power switch of the upper bridge arm and the power switch of the lower bridge arm can also be: the power switch of the upper bridge arm is a MOS tube, and the power switch of the lower bridge arm is an IGBT; The drain of the power switch of the upper bridge arm on the copper layer 9 of the bridge arm chip, the source of the power switch of the upper bridge arm pass through the upper bridge arm wiring copper layer 10 , and finally flow to the output electrode 3 .

The structure of the power switch of the upper bridge arm and the power switch of the lower bridge arm can also be: the power switch of the upper bridge arm is an IGBT, and the power switch of the lower bridge arm is a MOS tube; the working current 11 flowing out from the positive electrode 1 passes through the transition copper layer 6 It flows into the collector of the upper arm power switch on the upper arm chip copper layer 9 , the emitter of the upper arm power switch, and then passes through the upper arm wiring copper layer 10 , and finally flows to the output electrode 3 .

A structure of the upper bridge arm assembly and the lower bridge arm assembly is: the upper bridge arm chip unit 8 includes an integrated upper bridge arm power switch and an upper bridge arm internal diode, and the upper bridge arm power switch and the upper bridge arm The internal diodes are connected in parallel; the lower bridge arm chip unit 7 includes an integrated lower bridge arm power switch and the lower bridge arm internal diode, and the lower bridge arm power switch and the lower bridge arm internal diode are connected in parallel; the freewheeling current flowing out from the negative electrode 2 21 flows into the wiring copper layer 5 of the lower bridge arm, then flows into the anode of the internal diode of the lower bridge arm on the copper layer 4 of the lower bridge arm chip through the bonding wire, and the negative pole of the internal diode of the lower bridge arm, and finally flows to the output electrode 3.

Another structure of the upper bridge arm assembly and the lower bridge arm assembly is: the upper bridge arm chip unit 8 includes an upper bridge arm power switch and an upper bridge arm external diode in parallel with it, and the lower bridge arm chip unit 7 includes a lower bridge arm power switch. arm power switch and the external diode of the lower bridge arm connected in parallel with it; the freewheeling current 21 flowing out from the negative electrode 2 flows into the lower bridge arm wiring copper layer 5, and then flows into the lower bridge arm on the lower bridge arm chip copper layer 4 through the bonding wire The positive electrode of the external diode of the lower arm, the negative electrode of the external diode of the lower arm, and finally flows to the output electrode 3.

As shown in Figure 3, the upper bridge arm set in this embodiment includes 3 parallel upper bridge arm power switches and 6 parallel upper bridge arm external diodes; the lower bridge arm set includes 3 parallel lower bridge arm power switches. switch and six low-side external diodes in parallel.

The upper bridge arm chip unit 8 includes a parallel upper bridge arm power switch, an upper bridge arm internal diode and an upper bridge arm external diode, and the upper bridge arm power switch and the upper bridge arm internal diode are integrated; the lower bridge arm chip unit 7 includes the lower bridge arm power switch in parallel, the lower bridge arm internal diode and the lower bridge arm external diode, and the lower bridge arm power switch and the lower bridge arm internal diode are integrated; the freewheeling current 21 flowing out from the negative electrode 2 flows into the lower bridge arm The bridge arm wiring copper layer 5 flows into the positive pole of the lower bridge arm external diode on the lower bridge arm chip copper layer 4 and the positive pole of the lower bridge arm internal diode, the negative pole of the lower bridge arm external diode and the lower bridge arm internal diode through the bonding wire. The cathode of the diode, finally flows to the output electrode 3.

The working current 11 flowing from the positive electrode 1 flows into the upper bridge arm assembly through the transition copper layer 6 and finally flows to the output electrode 3; the freewheeling current 21 flowing from the negative electrode 2 flows into the lower bridge arm wiring copper layer 5, and then passes through the bonding wire It flows into the lower bridge arm chip unit 7 on the lower bridge arm chip copper layer 4 , and finally flows to the output electrode 3 .

The utility model changes the current path by changing the distribution structure of the copper layer, and the adjacently arranged lower bridge arm chip copper layer, lower bridge arm wiring copper layer, and transition copper layer cooperate with each other to reduce the continuous flow of the working current and the freewheeling current. The area of the current loop reduces the stray inductance and switching loss and the complexity of the circuit, improves the reliability of the module, and can be applied in the field of high-speed power modules.

Claims (9)

1. A power module, comprising a positive electrode (1), a negative electrode (2), an output electrode (3), a set of upper bridge arms, a set of lower bridge arms and a transition copper layer (6), characterized in that the lower The bridge arm set includes the lower bridge arm chip copper layer (4), the lower bridge arm wiring copper layer (5) and the lower bridge arm chip unit (7) installed on the lower bridge arm chip copper layer (4), the lower bridge arm The wiring copper layer (5) is located between the lower bridge arm chip copper layer (4) and the transition copper layer (6), and the lower bridge arm chip unit (7) is connected to the lower bridge arm wiring copper layer (5) through a bonding wire Connected; the working current (11) flowing from the positive electrode (1) flows into the upper bridge arm assembly through the transition copper layer (6) and finally flows to the output electrode (3); the freewheeling current (21) flowing from the negative electrode (2) It flows into the lower bridge arm wiring copper layer (5), then flows into the lower bridge arm chip unit (7) on the lower bridge arm chip copper layer (4) through the bonding wire, and finally flows to the output electrode (3). 2. A power module according to claim 1, characterized in that: the set of the upper bridge arm includes the upper bridge arm chip copper layer (9), the upper bridge arm wiring copper layer (10) and the upper bridge arm The upper bridge arm chip unit (8) on the chip copper layer (9). 3. A power module according to claim 2, characterized in that: the upper bridge arm chip unit (8) includes an integrated upper bridge arm power switch and an upper bridge arm internal diode, and the upper bridge arm power The switch and the internal diode of the upper bridge arm are connected in parallel; the lower bridge arm chip unit (7) includes an integrated lower bridge arm power switch and the lower bridge arm internal diode, and the lower bridge arm power switch and the lower bridge arm internal diode are connected in parallel; The freewheeling current (21) flowing out of the electrode (2) flows into the lower bridge arm wiring copper layer (5), and then flows into the anode and lower bridge arm internal diode on the lower bridge arm chip copper layer (4) through the bonding wire. The cathode of the diode inside the arm eventually flows to the output electrode (3). 4. A power module according to claim 2, characterized in that: the upper bridge arm chip unit (8) comprises an upper bridge arm power switch and an upper bridge arm external diode connected in parallel therewith, and the lower bridge arm chip unit (7) includes the lower bridge arm power switch and the lower bridge arm external diode in parallel with it; the freewheeling current (21) flowing out from the negative electrode (2) flows into the lower bridge arm wiring copper layer (5), and then passes through the bonding wire It flows into the anode of the external diode of the lower bridge arm on the copper layer (4) of the lower bridge arm, the cathode of the external diode of the lower bridge arm, and finally flows to the output electrode (3). 5. A power module according to claim 2, characterized in that: the upper bridge arm chip unit (8) comprises a parallel upper bridge arm power switch, an upper bridge arm internal diode and an upper bridge arm external diode, and The power switch of the upper bridge arm and the internal diode of the upper bridge arm are integrated into one body; the chip unit (7) of the lower bridge arm includes a power switch of the lower bridge arm connected in parallel, an internal diode of the lower bridge arm and an external diode of the lower bridge arm, and the power switch of the lower bridge arm Integrated with the internal diode of the lower bridge arm; the freewheeling current (21) flowing from the negative electrode (2) flows into the lower bridge arm wiring copper layer (5), and then flows into the lower bridge arm chip copper layer (4) through the bonding wire The anode of the upper and lower external diodes and the anode of the lower internal diode, the negative of the lower external diode and the negative of the lower internal diode, finally flow to the output electrode (3). 6. A kind of power module according to claim 1, it is characterized in that: described upper bridge arm chip unit (8) comprises upper bridge arm power switch; Described upper bridge arm power switch and lower bridge arm power switch are MOS tube; the operating current (11) flowing out from the positive electrode (1) flows into the drain of the upper bridge arm power switch on the upper bridge arm chip copper layer (9) through the transition copper layer (6), and the drain electrode of the upper bridge arm power switch The source electrode passes through the upper bridge arm wiring copper layer (10), and finally flows to the output electrode (3). 7. A kind of power module according to claim 1, it is characterized in that: described upper bridge arm chip unit (8) comprises upper bridge arm power switch; Described upper bridge arm power switch and lower bridge arm power switch are IGBT; the operating current (11) flowing out from the positive electrode (1) flows into the collector of the upper bridge arm power switch on the upper bridge arm chip copper layer (9) through the transition copper layer (6), and the emission of the upper bridge arm power switch pole, then through the upper bridge arm wiring copper layer (10), and finally flow to the output electrode (3). 8. A kind of power module according to claim 1, characterized in that: said upper bridge arm chip unit (8) comprises an upper bridge arm power switch; said upper bridge arm power switch is a MOS tube, and the lower bridge arm power The switch is an IGBT; the operating current (11) flowing from the positive electrode (1) flows into the drain of the upper arm power switch on the upper arm chip copper layer (9) through the transition copper layer (6), and the upper arm power switch The source electrode of the upper bridge arm connects the copper layer (10) and finally flows to the output electrode (3). 9. A kind of power module according to claim 1, it is characterized in that: described upper bridge arm chip unit (8) comprises upper bridge arm power switch; Described upper bridge arm power switch is IGBT, lower bridge arm power switch It is a MOS tube; the operating current (11) flowing out from the positive electrode (1) flows into the collector of the upper bridge arm power switch on the upper bridge arm chip copper layer (9) through the transition copper layer (6), and the upper bridge arm power switch The emitter, then through the upper bridge arm wiring copper layer (10), finally flows to the output electrode (3).